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ROHM has introduced the RS7P200BM, a 100V N-channel power MOSFET in a compact DFN5060-8S (5.0mm × 6.0mm) package. Designed for hot-swap applications and battery protection in 48V systems, the device is suitable for AI server power circuits and industrial equipment requiring efficient power management.
Key Specifications:
- Drain-Source Voltage (VDS): 100 V
- On-Resistance (RDS(on)): 4.0 mΩ (VGS = 10 V, ID = 50 A, Ta = 25°C)
- Safe Operating Area (SOA):
- 7.5 A @ 10 ms pulse width (VDS = 48 V)
- 25 A @ 1 ms pulse width (VDS = 48 V)
- Package: DFN5060-8S (5.0mm × 6.0mm)
The RS7P200BM is engineered to handle inrush currents and transient overload conditions in 48V hot-swap environments. Its wide SOA and low RDS(on) provide thermal and electrical efficiency for compact, high-density server designs.
Applications:
- 48V hot-swap circuits in AI servers and data centers
- Battery-powered industrial systems such as AGVs and forklifts
- UPS and backup power systems
- Robotics, fan motors, and power tools in 48V industrial domains
This release supports the industry’s trend toward 48V systems, aiming to improve power density, energy efficiency, and thermal performance in power electronics.
Original – ROHM
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Littelfuse has introduced the MMIX1T500N20X4, a 200V N-channel ultra-junction power MOSFET designed for high-current applications requiring low conduction losses and improved thermal performance.
Key Specifications:
- Blocking Voltage: 200 V
- Drain Current (ID): 480 A
- On-Resistance (RDS(on)): 1.99 mΩ
- Gate Charge (Qg): 535 nC
- Thermal Resistance (Rth(j-c)): 0.14 °C/W
- Isolation Voltage: 2500 VRMS
The device is housed in a ceramic-based, isolated SMPD-X package with topside cooling, which supports simplified thermal management and higher power density. Compared to other X4-Class MOSFETs, the MMIX1T500N20X4 offers significantly lower RDS(on) and higher current capability, allowing for consolidation of paralleled MOSFETs in system designs.
Target Applications:
- DC load switching
- Battery energy storage systems
- Industrial power supplies and process control
- Charging infrastructure
- Power electronics for drones and VTOL platforms
This MOSFET is suitable for systems requiring compact, high-efficiency, and high-reliability solutions in medium-voltage ranges.
Original – Littelfuse
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iDEAL Semiconductor has introduced its SuperQ™ MOSFET technology, specifically engineered to address safety and efficiency challenges in high-voltage (72V and above) battery management systems (BMS). The platform sets a new industry benchmark for short-circuit withstand capability (SCWC), a critical metric for battery discharge switches.
The rising deployment of high-voltage battery systems in applications such as e-mobility, drones, and industrial power tools demands enhanced safety mechanisms against extreme short-circuit events. The discharge MOSFET plays a vital role in isolating battery packs under such high-stress conditions.
According to Dr. Phil Rutter, Vice President of Design at iDEAL Semiconductor, “Traditional MOSFETs require trade-offs between achieving low RDS(on) for efficiency and maintaining structural integrity to withstand high short-circuit currents. SuperQ™ eliminates this compromise through a proprietary cell structure that delivers both industry-low on-resistance and unmatched safety margins.”
In internal testing, the SuperQ™ iS15M2R5S1T (150V, 2.5mΩ, TOLL package) demonstrated a short-circuit withstand capability of 800A—1.4 times greater than a comparable 150V, 2.5mΩ device from a leading competitor, which withstood 580A. This performance is achieved through a wider conduction region that maximizes power density and structural resilience under extreme conditions.
The enhanced SCWC of the SuperQ™ platform enables multiple system-level advantages:
- Reduction in component count by up to 50% due to higher current handling capability
- Lower total system cost from simplified layouts and reduced material usage
- Improved efficiency through ultra-low 2.5mΩ RDS(on), decreasing power losses and thermal demands
The SuperQ™ product line is immediately available in voltage ratings up to 200V, supporting battery platforms from 72V to over 144V.
Original – iDEAL Semiconductor
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Magnachip Semiconductor announced two 650V Super Junction MOSFET products in a TO-Leadless (TOLL) package engineered for high-power, high-current consumer applications, including premium TVs, gaming monitors, AI laptop adaptors, and fast chargers.
Unlike Magnachip’s existing 80V–200V eXtreme Trench MOSFETs in 3-pin TOLL, the new 650V SJ MOSFETs adopt a 4-pin Kelvin configuration. By separating the gate-source return path, the design reduces parasitic inductance, helping to curb gate ringing, improve switching stability, and raise overall power efficiency—especially at higher dv/dt and di/dt.
Against conventional D2PAK packaging, the 4-pin TOLL format delivers more than a 100% increase in current capability, a 24% reduction in board footprint, and a 48% reduction in height. The result is a compact, thermally efficient package well suited to smaller PCBs and high-power-density products that demand strong heat dissipation.
The new devices are aimed at meeting the dual requirements of space savings and performance in slim form-factor systems. The company plans to broaden its 600V TOLL lineup to support next-generation platforms in AI datacenters and other high-power applications.
Original – Magnachip Semiconductor
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MCC introduced the MCTL1D0N08Y, an 80 V N-channel MOSFET in a compact TOLL-8L package engineered for high-current, fast-switching designs where thermal performance, efficiency, and footprint are critical. With a maximum RDS(on) of 1.0 mΩ at VGS = 10 V and a continuous drain current rating of 320 A, the device is aimed at reducing conduction losses in server-class SMPS, high-current DC-DC converters, industrial motor drives, and energy-storage inverters.
The MOSFET leverages a split-gate trench architecture and a low-parasitic package layout to enable fast, clean transitions that lower switching losses and mitigate EMI. Compared with legacy D2PAK solutions, the TOLL-8L format shortens current paths and improves thermal flow, supporting higher switching frequencies, smaller magnetics and heatsinks, and more compact, reliable assemblies.
Key specifications and design attributes
• Drain-source voltage (VDS): 80 V, providing transient headroom for telecom, data center, and industrial environments
• RDS(on): 1.0 mΩ max at VGS = 10 V for minimized conduction loss and higher efficiency
• Continuous drain current: 320 A for demanding high-current stages
• Package: TOLL-8L with low parasitics for improved switching behavior versus D2PAK
• Thermal performance: RθJA ≈ 40 °C/W; junction temperature Tj(max) = 175 °C for reliable operation at elevated ambient conditions
• Architecture: Split-gate trench design to balance ultra-low on-resistance with high switching speedBy combining very low on-resistance with a high-current, thermally capable package, the MCTL1D0N08Y is positioned to enhance uptime, reduce system losses, and shrink power stages across a wide range of industrial and infrastructure applications.
Original – Micro Commercial Components
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iDEAL Semiconductor has announced that its proprietary SuperQ™ technology has successfully achieved AEC-Q101 automotive qualification, marking the company’s entry into high-reliability and automotive-grade power semiconductor markets.
The company’s first automotive-qualified product, the iS20M028S1CQ, is a 200 V MOSFET featuring a low 25 mΩ RDS(on) and a maximum junction temperature rating of 175°C. The device is now entering mass production.
SuperQ technology represents a major innovation in silicon MOSFET performance, delivering significantly higher efficiency, lower switching losses, and improved conduction characteristics while retaining the proven robustness and reliability of silicon. This qualification confirms SuperQ’s ability to meet the demanding standards required for automotive applications, including electric vehicle powertrains, on-board chargers, and advanced driver-assistance systems (ADAS).
The iS20M028S1CQ extends iDEAL’s 200 V product family and is housed in a compact PDFN 5×6 mm package. The device offers up to 1.7 times better performance compared to competing solutions, combining high efficiency and low resistance with compatibility for high-volume, cost-efficient manufacturing.
“This is an important milestone that builds on the ruggedness and robustness of SuperQ, opening new markets for iDEAL,” said Mark Granahan, CEO and Founder of iDEAL Semiconductor. “Automotive qualification validates our technology’s potential to drive efficiency in electrified transportation and beyond, empowering customers with more sustainable, more reliable power solutions.”
With this achievement, iDEAL strengthens its position in the power semiconductor industry, bringing advanced silicon-based innovation to applications that demand high efficiency, reliability, and performance under extreme conditions.
Original – iDEAL Semiconductor
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Micro Commercial Components (MCC) has introduced its new 1200V Trench Field Stop (TFS) IGBT series, designed to deliver high efficiency, durability, and flexibility for demanding power switching applications in both industrial and automotive sectors.
The new IGBT family is housed in the proven TO-247AB package and available in current ratings from 40A to 80A. These devices feature low conduction and switching losses, smooth high-speed transitions, and integrated soft-recovery anti-parallel diodes to ensure low electromagnetic interference and simplified filter design.
Automotive-grade versions of the TFS IGBTs are AEC-Q101 qualified and rated for a maximum junction temperature of 150°C, while industrial variants can operate up to 175°C for extended thermal performance and longer service life. The series is well suited for motor drives, uninterruptible power supplies (UPS), electric vehicle traction and auxiliary systems, and high-power converters that require both efficiency and rugged reliability.
The trench field-stop design provides several key advantages, including:
- Low forward voltage and reduced switching losses, improving overall efficiency and minimizing heat generation
- Integrated fast, soft-recovery diodes for lower EMI and simplified circuit design
- 1200V breakdown voltage with a positive temperature coefficient, ensuring stable current sharing and robust short-circuit protection
Key Features and Benefits
- TO-247AB package for standard compatibility and easy thermal management
- 1200V breakdown voltage for ample design margin
- Wide current range from 40A to 80A
- Fast and smooth switching performance for both hard- and soft-switching topologies
- Low conduction and switching losses for improved system efficiency
- Integrated soft-recovery anti-parallel diode
- Positive temperature coefficient for stable parallel operation
- Automotive-grade options qualified to AEC-Q101 (TJ max = 150°C)
- Industrial-grade variants rated up to TJ max = 175°C
- High short-circuit endurance and avalanche ruggedness
- Suitable for high-frequency operation with reduced EMI
MCC’s 1200V TFS IGBT series provides engineers with a reliable, efficient, and cost-effective solution for next-generation industrial drives, EV power systems, and high-performance power conversion designs.
Original – Micro Commercial Components
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GlobalWafers Co., Ltd. has officially inaugurated FAB300, its new 300mm semiconductor wafer manufacturing plant at MEMC Electronic Materials S.p.A. in Novara, Italy. The company describes FAB300 as one of Europe’s most advanced and fully integrated 300mm silicon wafer facilities.
The inauguration ceremony was attended by Italy’s Minister of Enterprises and Made in Italy, Adolfo Urso, Senator Gaetano Nastri, Member of the European Parliament Isabella Tovaglieri, Novara Mayor Alessandro Canelli, and Vincent Y.C. Tsai from the Taipei Representative Office in Italy. Representatives from the Piedmont Region, along with customers, suppliers, and partners, also joined the event, marking a major milestone for the European semiconductor industry.
GlobalWafers Chairperson Doris Hsu emphasized that FAB300 represents more than just a production site. She described it as a symbol of innovation, sustainability, and shared growth, reflecting the skill and dedication of the company’s Italian team. According to Hsu, the new facility will enable closer collaboration with customers to co-develop advanced technologies and support Europe’s growing semiconductor ecosystem.
The Novara site has produced silicon wafers since 1976. In February 2022, GlobalWafers announced a €450 million expansion to add this new 300mm fabrication module, reinforcing its long-term commitment to Europe. FAB300 has received €103 million in R&D funding through the Important Project of Common European Interest on Microelectronics and Communication Technologies (IPCEI-ME/CT), a joint initiative between the Italian government and the European Union to strengthen the continent’s semiconductor capabilities.
Senator Gaetano Nastri highlighted that the project marks a crucial step for Italy and Europe, calling investments in the semiconductor supply chain “investments in the future.” Member of the European Parliament Isabella Tovaglieri added that FAB300 strengthens Italy’s position as an innovation leader and contributes to Europe’s technological independence.
The new facility was developed in partnership with major European microelectronics companies to ensure alignment with customer requirements and strategic priorities. STMicroelectronics praised GlobalWafers’ decision to invest in Novara, noting the site’s proximity to its own operations and its contribution to supply chain resilience.
Despite global economic challenges, GlobalWafers has remained committed to its European operations. The completion of FAB300 adds significant new manufacturing capacity and will create up to 150 high-skilled jobs. Novara Mayor Alessandro Canelli noted that the investment reinforces the city’s industrial heritage and demonstrates how innovation can drive both growth and employment.
Working in synergy with its Merano crystal growth facility, GlobalWafers now operates one of Europe’s few fully integrated 300mm silicon wafer value chains, spanning from crystal growth to finished wafers. Once fully ramped, FAB300 will produce 300mm polished and epitaxial wafers for advanced logic, memory, power, and sensor applications. The site will run entirely on renewable energy under the RE100 standard, with a focus on water recycling and sustainable manufacturing practices.
Marco Sciamanna, President of MEMC Electronic Materials S.p.A., said FAB300 represents the result of vision, competence, and strong collaboration among GlobalWafers’ teams, institutions, and partners. He noted that the site will serve as both a cutting-edge semiconductor facility and a model of sustainable growth for the future.
Minister Adolfo Urso stated that the inauguration confirms Italy’s growing leadership in the semiconductor sector and its contribution to Europe’s drive for technological sovereignty. He emphasized the importance of collaboration between industry, education, and research to strengthen competitiveness and prepare for future challenges.
The FAB300 project involved hundreds of suppliers, equipment manufacturers, and engineering firms, strengthening the entire Piedmont region’s position in the global semiconductor value chain. GlobalWafers also continues to collaborate with universities and research institutions to develop talent and foster innovation.
The opening of FAB300 follows the launch of GlobalWafers America in Sherman, Texas, earlier in 2025. Together, these facilities demonstrate the company’s commitment to geographic diversification and global cooperation with governments and customers.
Chairperson Hsu concluded that Novara now stands at the center of GlobalWafers’ European innovation strategy. She said FAB300 enhances Europe’s role in the global semiconductor landscape and exemplifies the company’s integrated, regionally anchored manufacturing approach. Through its advanced facilities across Asia, Europe, and the United States, GlobalWafers aims to provide a reliable, sustainable, and globally coordinated supply of 300mm silicon wafers for the technologies that will define the future.
Original – GlobalWafers
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Infineon Technologies has announced its support for NVIDIA’s 800 VDC power architecture, introduced at Computex 2025, marking a major step toward creating more efficient, scalable, and serviceable AI data centers. As the power demands of artificial intelligence infrastructure continue to grow exponentially, the move from traditional 54 V systems to centralized 800 VDC architectures is becoming essential to improve energy efficiency, reduce losses, and increase overall system reliability.
Adam White, Division President of Power & Sensor Systems at Infineon Technologies, emphasized the company’s role in shaping this transformation. “There is no AI without power,” he stated. “We are working with NVIDIA on intelligent power systems that not only meet the demands of future AI data centers but also minimize system downtimes. By driving the shift to high-density, reliable, and safe 800 VDC architectures, we are redefining how power is delivered to AI infrastructure and maximizing the value of every watt.”
Infineon’s collaboration with NVIDIA focuses on ensuring both safety and serviceability in 800 VDC-powered systems. One key innovation is the integration of hot-swap controller functionality, which enables server boards to be safely replaced or maintained while the rest of the rack continues operating. This solution, based on Infineon’s CoolSiC™ JFET technology, allows controlled pre-charging and discharging of server boards, preventing electrical hazards and eliminating costly downtime.
As AI data center power requirements rise — with rack power expected to reach 500 kilowatts and potentially 1 megawatt by the end of the decade — Infineon is developing next-generation power conversion systems that combine its Intermediate Bus Converter (IBC) and high-frequency gallium nitride (GaN) switching technologies. These solutions support efficient two- and three-stage power conversion from the grid to the server core, achieving up to 98 percent efficiency per conversion stage.
The company’s holistic approach extends beyond power conversion to include protection and control components that enhance reliability and sustainability. By leveraging silicon carbide (SiC), GaN, and silicon technologies, Infineon provides a complete portfolio of semiconductor solutions to enable safe and efficient megawatt-scale AI server racks.
Infineon’s experts will further discuss power conversion solutions for future server boards operating directly from high-voltage DC at the OCP Global Summit 2025 and explore advancements in AI data center power systems at OktoberTech Silicon Valley 2025.
With these developments, Infineon continues to position itself at the forefront of the semiconductor industry’s drive toward powering the AI revolution with smarter, more sustainable, and higher-performance energy systems.
Original – Infineon Technologies
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STMicroelectronics has revealed a complete prototype of its new power delivery system designed to support NVIDIA’s 800 VDC architecture for next-generation AI data centers. The company’s announcement underscores its leadership in developing semiconductor technologies that meet the rising power and efficiency demands of large-scale AI computing infrastructure.
As AI workloads grow rapidly, traditional 54 V power distribution systems are reaching their limits. The shift to 800 VDC architectures enables megawatt-scale compute racks that are more efficient, require less copper, and simplify overall system design. STMicroelectronics is contributing to this transition with a portfolio that integrates silicon carbide (SiC), gallium nitride (GaN), and silicon technologies optimized for high-voltage, high-efficiency applications.
At the OCP Global Summit 2025, ST presented a major development milestone: a compact 12 kW GaN-based LLC power delivery board roughly the size of a smartphone. Operating from an 800 V input and switching at 1 MHz, the prototype achieved more than 98 percent efficiency and a record power density of over 2,600 W/in³ at 50 V output.
The new system addresses key design challenges in power density, thermal management, efficiency, and reliability—critical factors for deploying megawatt-scale AI compute systems while lowering infrastructure complexity and cost.
STMicroelectronics’ achievement represents a significant step forward in enabling high-performance, energy-efficient power delivery solutions for the emerging generation of hyperscale AI data centers built on 800 VDC architectures.
Original – STMicroelectronics
