Toshiba Electronic Devices & Storage Corporation has launched a 150V N-channel power MOSFET “TPH9R00CQ5,” which uses the latest generation U-MOSX-H process, for switching power supplies of industrial equipment, such as that used in data centers and communications base stations.
TPH9R00CQ5 features an industry-leading low drain-source On-resistance of 9.0mΩ (max), approximately a 42% reduction from Toshiba’s existing product, “TPH1500CNH1.” Compared with Toshiba’s existing product “TPH9R00CQH,” the reverse recovery charge is reduced by about 74% and the reverse recovery time by about 44%, both key reverse recovery characteristics for synchronous rectification applications. Used in synchronous rectification applications, the new product reduces the power loss of switching power supplies and helps improve efficiency. Furthermore, compared to TPH9R00CQH, the new product reduces spike voltage generated during switching, helping lower the EMI of power supplies.
The product uses the popular, surface-mount-type SOP Advance(N) package.
Toshiba also offers tools that support circuit design for switching power supplies. Alongside the G0 SPICE model, which verifies circuit function in a short time, highly accurate G2 SPICE models, which accurately reproduce transient characteristics, are now available.
Toshiba has also developed “1 kW Non-Isolated Buck-Boost DC-DC Converter for Telecommunications Equipment” and “Three-phase Multi Level Inverter using MOSFET” reference designs that utilize the new product. They are available on Toshiba’s website from today. The new product can also be utilized for the already published “1 kW Full-Bridge DC-DC Converter” reference design.
Toshiba will continue to expand its lineup of power MOSFETs that reduce power loss, increase the efficiency of power supplies, and help to improve equipment efficiency.
- Power supplies of industrial equipment, such as that used in data centers and communications base stations.
- Switching power supplies (high efficiency DC-DC converters, etc.)
- Industry-leading low On-resistance: RDS(ON)=9.0mΩ (max) (VGS=10V)
- Industry-leading low reverse recovery charge: Qrr=34nC (typ.) (-dIDR/dt=100A/μs)
- Industry-leading fast reverse recovery time: trr=40ns (typ.) (-dIDR/dt=100A/μs)
- High channel temperature rating: Tch (max)=175°C
Original – Toshiba