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Efficient Power Conversion will showcase its latest Gen 7 gallium nitride (GaN) power technologies at PCIM Europe 2026, focusing on humanoid robotics, drone propulsion, compact motion systems, and AI power delivery applications.
The company’s demonstrations center on how high-frequency GaN devices enable smaller, lighter, and more efficient motion-control and power-conversion architectures. EPC’s latest integrated ePower Stage ICs, including the EPC33110 and EPC2310x families, target compact three-phase motor drives for humanoid joints, robotic arms, and drone propulsion systems. These devices support operation up to 100 V with current capability up to 35 A, delivering high switching frequency and improved power density for intelligent motion systems.
EPC will also highlight multiple low-voltage GaN FETs optimized for AI infrastructure and high-density DC-DC conversion, including:
- EPC2366 (40 V, 0.84 mΩ) for synchronous rectification,
- EPC2361 (100 V, 0.75 mΩ),
- EPC2304 and EPC2305 for isolated DC-DC conversion,
- New Gen 7 devices such as EPC2370, EPC2377, EPC2378, and EPC2375 in compact dual-cooled QFN packages.
The company will demonstrate these components across several reference platforms, including:
- Three-phase inverter boards for robotic and drone propulsion,
- High-density isolated converters for AI servers,
- Totem-pole PFC stages,
- Intermediate bus converters and synchronous buck architectures.
A major strategic theme is EPC’s positioning of low-voltage GaN as a core enabling technology for both intelligent motion systems and AI computing infrastructure. The company emphasizes that higher switching frequencies allow reductions in passive component size, system weight, and thermal complexity while improving transient response and overall efficiency.
Beyond robotics and drones, EPC will showcase how the same GaN platform supports compact electrified systems such as e-bikes and power tools, while also scaling into multi-kilowatt AI server power architectures.
Original – Efficient Power Conversion
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L&T Semiconductor Technologies Ltd has entered into a multi-year licensing agreement with Synopsys to strengthen its advanced power electronics design capabilities and accelerate development of next-generation power modules and intelligent power modules (IPMs).
Under the agreement, LTSCT will deploy Synopsys’ AI-enabled multiphysics simulation technologies to optimize semiconductor designs across chip, package, and system levels. The collaboration is aimed at improving design efficiency, reducing development cycles, and enhancing reliability in high-voltage power electronics applications.
The partnership focuses particularly on intelligent power modules operating from 1.2 kV up to 10 kV, where increasingly complex electrical, thermal, and mechanical interactions require advanced simulation-driven design methodologies. AI-assisted modeling will enable simultaneous optimization across multiple domains, reducing prototyping requirements and accelerating commercialization.
Strategically, the collaboration strengthens India’s emerging semiconductor ecosystem by expanding domestic design capabilities in power electronics—a critical area for electric vehicles, renewable energy, industrial automation, and smart manufacturing.
LTSCT plans to develop highly integrated module architectures combining power semiconductors, gate drivers, protection circuits, and control logic within compact form factors. By leveraging AI-driven simulation and digital design workflows, the company aims to improve overall system robustness while lowering development costs.
From a market perspective, this agreement reflects the growing importance of software-defined semiconductor development, particularly in advanced power modules where thermal management, packaging, and reliability are becoming key differentiators. It also highlights the increasing convergence of AI, multiphysics simulation, and power semiconductor design as companies race to accelerate innovation cycles.
The collaboration further positions LTSCT as a strategic domestic player in India’s expanding power semiconductor landscape while reinforcing Synopsys’ role as a critical enabler of next-generation semiconductor system design.
Original – L&T Semiconductor Technologies
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Cyient Semiconductors has announced the launch of its first gallium nitride (GaN) power device family for the Indian market, developed using technology licensed from Navitas Semiconductor.
The launch marks a significant milestone for India’s domestic power semiconductor ecosystem, positioning Cyient Semiconductors as a new entrant in the high-performance GaN market. The initial portfolio includes seven integrated 700 V GaN power devices designed for applications such as AI data centers, telecom infrastructure, consumer fast chargers, industrial power systems, and e-mobility platforms.
The devices integrate driver, control, protection, EMI management, and current sensing functions within compact DPAK packages, simplifying system design and accelerating product development. The portfolio spans multiple resistance levels from 120 mΩ to 330 mΩ, supporting both QR and PFC/high-side topologies.
Strategically, the collaboration builds on an agreement announced in late 2025 under which Cyient licenses Navitas’ GaN technology for deployment in India. In addition to local commercialization, Cyient will act as a second-source supplier for selected Navitas products already in production, strengthening supply chain resilience and supporting domestic sourcing initiatives aligned with India’s “Make in India” strategy.
From a technology perspective, GaN devices offer substantial advantages over traditional silicon, including higher switching speeds, lower losses, and improved thermal efficiency. These benefits are increasingly critical in AI infrastructure and compact high-power systems where efficiency and power density directly impact operating costs and scalability.
Looking ahead, Cyient plans to expand the portfolio through partnerships with local OSAT providers, with a long-term goal of enabling domestic manufacturing of GaN power devices in India. This phased approach reflects a broader industry trend toward regional semiconductor ecosystems and localized supply chains.
From a market standpoint, the announcement highlights India’s growing ambition to participate more actively in advanced power semiconductor technologies, particularly in strategically important segments such as AI infrastructure, telecom power, and electrification.
Original – Cyient Semiconductors
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Infineon Technologies AG has expanded its XHP™ 2 power module portfolio with new 2300 V CoolSiC™ MOSFET variants, targeting next-generation high-voltage renewable energy and energy storage systems.
The new silicon carbide modules are designed to support DC-link voltages up to 1500 V, aligning with the industry shift toward higher-voltage architectures aimed at improving efficiency and reducing system complexity. The modules are offered with RDS(on) values ranging from 1 mΩ to 2 mΩ and isolation voltages of either 4 kV or 6 kV, enabling flexibility across various high-power applications.
By leveraging SiC technology, the modules significantly reduce switching and conduction losses compared to conventional silicon solutions. This enables higher inverter efficiency, increased power density, and operation at higher switching frequencies, which can reduce harmonic distortion and shrink overall system size.
The devices are packaged in Infineon’s XHP 2 platform, featuring symmetrical switching characteristics that simplify paralleling in large power converters. The modules also integrate Infineon’s .XT interconnection technology to improve reliability and extend operational lifetime. Optional pre-applied thermal interface material further simplifies assembly and enhances thermal consistency.
Infineon highlighted measurable system-level performance improvements, including power densities reaching 300 kW/L in wind power demonstrations and semiconductor losses below 0.7% of output power in battery storage applications.
From a market perspective, the launch reflects accelerating demand for higher-voltage, high-efficiency power conversion in renewable energy infrastructure, utility-scale battery storage, and grid modernization projects. As system voltages continue rising to improve energy transmission efficiency, 2300 V SiC devices are emerging as a key enabling technology.
Strategically, Infineon is strengthening its position in the rapidly growing high-voltage SiC market, where scalability, efficiency, and reliability are becoming critical differentiators for renewable energy and industrial power systems.
Original – Infineon Technologies
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Infineon Technologies AG has launched its 2026 Startup Challenge, a global innovation initiative aimed at accelerating the development of humanoid robotics technologies through collaboration with startups and emerging deep-tech companies.
The program is part of Infineon’s broader Co-Innovation Program, which combines semiconductor expertise with startup-driven innovation to develop scalable, market-ready solutions. The 2026 edition specifically targets technologies supporting humanoid robotics and physical AI applications.
Key technology focus areas include advanced sensing systems such as virtual skin and hand concepts, environmental perception using camera and radar fusion, interaction technologies based on laser projection systems, and precision motor control solutions for robotic movement and actuation.
Strategically, the initiative highlights Infineon’s growing focus on humanoid robotics as a long-term semiconductor growth market. Power management, sensing, connectivity, and motor control are all critical semiconductor-intensive functions in next-generation robotics platforms, positioning Infineon to expand its role beyond traditional automotive and industrial markets.
Participating startups will gain access to Infineon hardware and software development platforms, technical mentoring, prototyping support, and investor exposure. The program culminates in demonstration and pitch sessions attended by industry representatives and deep-tech investors.
From a market perspective, the challenge reflects increasing industry recognition that humanoid robotics and physical AI could become major future semiconductor demand drivers. As robotics systems evolve toward greater autonomy and real-world interaction, demand is expected to increase for advanced sensors, efficient power devices, embedded processing, and motion-control semiconductors.
The initiative also aligns with broader European industrial policy goals, as the program receives support under the IPCEI framework for microelectronics and computer technology, reinforcing Europe’s ambition to strengthen strategic semiconductor and robotics ecosystems.
Original – Infineon Technologies
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Infineon Technologies AG announced that the Full Commission of the U.S. International Trade Commission (ITC) has affirmed a prior ruling that Innoscience infringed an Infineon gallium nitride (GaN) patent, resulting in import and sales bans against Innoscience products in the United States.
The ruling confirms the ITC’s December 2025 initial determination and represents a significant development in the increasingly competitive GaN power semiconductor market. The decision remains subject to a 60-day presidential review period before becoming fully effective.
Infineon emphasized that the ruling reinforces the strength of its GaN intellectual property portfolio and its commitment to protecting proprietary technologies. The company currently holds approximately 450 GaN patent families and continues to expand its position as a leading integrated device manufacturer (IDM) in wide-bandgap semiconductors.
The dispute extends beyond the U.S. market. In Germany, Infineon is also pursuing multiple patent and utility model infringement cases against Innoscience, including a previous favorable ruling from the Munich District Court in 2025. Additional hearings are scheduled for 2026.
Strategically, the case highlights the growing importance of intellectual property as GaN adoption accelerates across AI data centers, renewable energy, industrial automation, and electric vehicles. As competition intensifies—particularly among Asian and European suppliers—control over core device architectures and manufacturing processes is becoming increasingly critical.
The decision also comes as Infineon advances its 300 mm GaN manufacturing strategy, positioning itself for large-scale production and cost competitiveness. Combined with its established silicon and silicon carbide portfolios, Infineon continues pursuing a multi-material power semiconductor strategy aimed at supporting next-generation high-efficiency power systems.
From a broader industry perspective, the ruling may influence competitive dynamics in the global GaN market, potentially affecting supplier access, pricing strategies, and partnership decisions as customers increasingly prioritize technology ownership, manufacturing scale, and long-term supply security.
Original – Infineon Technologies
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STMicroelectronics has introduced two new 100 W VIPerGaN high-voltage converters, expanding the use of GaN-based power conversion across consumer electronics, smart home systems, appliances, and building automation applications.
The new VIPerGaN100W and VIPerGaN100WB integrate a 700 V GaN transistor, gate driver, and flyback controller into compact 5 mm × 6 mm QFN packages. The VIPerGaN100WB supports higher peak current capability, allowing short-term output power up to 125 W for applications with inductive loads such as motors and solenoid valves.
The integrated GaN power stage features ultra-low RDS(on), enabling improved thermal performance and higher efficiency. By leveraging the high switching frequencies enabled by GaN technology, the converters reduce passive component size and improve overall power density.
ST also demonstrated the technology through its EVLVIPGAN100WP 100 W USB Type-C Power Delivery 3.0 reference design, which achieves over 92% peak efficiency and a power density of 24 W/in³. The design supports multiple USB-PD output profiles from 5 V to 20 V.
Technically, the converters operate in quasi-resonant flyback mode with zero-voltage switching, incorporating advanced power management features such as valley skipping, frequency foldback, and burst-mode operation to optimize efficiency across varying load conditions. Standby power consumption is reduced below 30 mW.
The devices also integrate extensive protection functions, including overvoltage, overtemperature, and brown-in/brown-out protection, simplifying system-level design and improving reliability.
From a market perspective, this launch reflects the ongoing expansion of GaN beyond premium fast chargers into broader consumer and industrial power applications. By integrating GaN power devices and control circuitry into highly compact solutions, ST is lowering the barrier to adoption for mainstream OEMs seeking higher efficiency, reduced size, and lower standby power consumption.
The move also strengthens ST’s competitive position in the growing integrated GaN power IC market, where ease of design integration and cost-effective scalability are becoming increasingly important differentiators.
Original – STMicroelectronics
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Power Integrations has appointed Michael Balow as Senior Vice President of Worldwide Sales, strengthening its executive leadership team as the company targets expansion in high-growth power semiconductor markets.
Balow brings more than 30 years of semiconductor industry experience, including senior sales leadership roles at onsemi, Infineon Technologies AG, Cypress Semiconductor, Freescale Semiconductor, and Integrated Device Technology. Most recently, he served as Executive Vice President of Sales at onsemi, overseeing global sales operations across automotive, industrial, sensing, and power markets.
In his new role at Power Integrations, Balow will lead the company’s global sales organization, channel strategy, and business growth initiatives. His appointment reflects the company’s increasing focus on expanding customer engagement and capturing opportunities in rapidly growing segments such as AI data centers, automotive electrification, and industrial power conversion.
From a strategic standpoint, the hire signals Power Integrations’ intent to accelerate commercial execution as demand for high-efficiency power semiconductors continues to rise. The company has recently expanded its GaN and high-voltage power conversion portfolio, positioning itself to benefit from trends toward higher power density, improved energy efficiency, and simplified power architectures.
The appointment also highlights intensifying competition across the power semiconductor industry, where companies are strengthening leadership teams to support growth in AI infrastructure, renewable energy, and electrification markets.
Original – Power Integrations
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Infineon Technologies AG has been included in the Dow Jones Best-in-Class Indices Global and Europe for the 16th consecutive year, reinforcing its position as one of the semiconductor industry’s leading companies in sustainability performance.
The recognition highlights Infineon’s ongoing efforts to combine environmental responsibility with long-term business growth. The company emphasized that sustainability remains deeply integrated into its strategy, particularly as demand grows for semiconductors supporting electrification, renewable energy, AI infrastructure, and energy-efficient IoT applications.
In 2025, Infineon achieved several notable sustainability milestones. The Science Based Targets initiative (SBTi) validated the company’s scope 1 and 2 emissions reduction targets in line with the Paris Agreement’s 1.5°C pathway, while also approving its scope 3 supply chain emissions targets. Scope 3 emissions represent the majority of the semiconductor industry’s carbon footprint, making supplier engagement increasingly critical.
To address this, Infineon expanded collaboration with more than 100 suppliers through its Supplier Engagement Program and continued deploying its Product Carbon Footprint initiative to improve emissions transparency at the product level.
Operationally, the company reported that it exceeded its interim climate targets, reducing emissions by more than 80% versus 2019 levels by the end of fiscal 2025—surpassing its original 70% reduction target. Infineon remains committed to achieving carbon neutrality by 2030.
From an industry perspective, sustainability is becoming a strategic differentiator for semiconductor manufacturers as customers increasingly evaluate environmental performance alongside technology and supply security. For power semiconductor suppliers in particular, leadership in energy efficiency and decarbonization is increasingly tied to opportunities in EVs, AI data centers, renewable energy, and industrial electrification.
Infineon’s continued recognition reflects not only operational sustainability progress but also its positioning as a key enabler of global electrification and energy-efficiency trends.
Original – Infineon Technologies
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Navitas Semiconductor has appointed semiconductor industry veteran Davin Lee to its Board of Directors, effective immediately, as the company continues its strategic transition toward high-power semiconductor markets.
Lee brings more than 30 years of semiconductor industry experience, including senior leadership roles at companies such as Renesas, Dialog Semiconductor, Intersil, Altera, and National Semiconductor. Most recently, he served as Senior Vice President and General Manager of Embedded Processing and Analog and Connectivity at Renesas.
At Navitas, Lee will serve on the Compensation Committee and the Governance and Sustainability Committee, while also standing for reelection in 2027 as a Class III director.
The appointment aligns with Navitas’ broader “Navitas 2.0” transformation strategy, which focuses on expanding its presence in high-growth applications including AI data centers, energy infrastructure, industrial electrification, and high-performance computing. Management emphasized that Lee’s operational expertise and background in scaling semiconductor businesses will support the company’s transition into a larger high-power semiconductor player.
Strategically, the board refresh reflects Navitas’ increasing emphasis on operational execution and long-term profitability as it pivots from consumer-focused GaN applications toward infrastructure-scale power markets where both GaN and high-voltage SiC technologies are gaining traction.
From a market perspective, the move highlights how power semiconductor companies are strengthening executive and board-level expertise to navigate rapid expansion opportunities tied to AI-driven power demand. As infrastructure power architectures evolve toward higher efficiency and higher density systems, experienced leadership in analog, power management, and scaling operations is becoming increasingly important for competitive positioning.
Original – Navitas Semiconductor
