• onsemi to Establish a Vertically Integrated SiC Manufacturing Facility in Czech Republic

    onsemi to Establish a Vertically Integrated SiC Manufacturing Facility in Czech Republic

    3 Min Read

    Electrification, renewables and artificial intelligence are global megatrends converging and driving unprecedented demands for advanced power semiconductors capable of optimizing energy conversion and management. In a strategic move toward addressing these demands, onsemi announced plans to establish a state-of-the-art, vertically integrated silicon carbide (SiC) manufacturing facility in the Czech Republic. The site would produce the company’s intelligent power semiconductors that are essential for improving the energy efficiency of applications in electric vehicles, renewable energy and AI data centers. 

    “Our brownfield investment would establish a Central European supply chain to better service our customers’ rapidly increasing demand for innovative technologies that improve the energy efficiency in their applications,” said Hassane El-Khoury, president and CEO, onsemi. “Through a close collaboration with the Czech government, the expansion would also enhance our production of intelligent power semiconductors that are essential to helping ensure the European Union is able to achieve its ambitions to significantly reduce carbon emissions and environmental impact.”  

    “onsemi’s decision to expand in Czechia is a clear confirmation of our country’s attractiveness for foreign investment and will bring significant momentum for the development of our economy,” said Mr. Jozef Síkela, Minister of Industry and Trade of the Czech Republic. “This investment not only strengthens our position in the semiconductor field but can also contribute to the development of the automotive industry and help us with its adaptation to the rise of electromobility.” 

    onsemi’s plan to expand SiC manufacturing with a multi-year brownfield investment of up to $2 billion (44 billion CZK) is part of the company’s previously disclosed long-term capital expenditure target. This investment would build on the company’s current operations in the Czech Republic, which include silicon crystal growth, silicon and silicon carbide wafer manufacturing (polished and EPI) and a silicon wafer fab. Today, the site can produce more than three million wafers annually, including more than one billion power devices. Upon completion, the operation would contribute annually more than $270 million USD (6 billion CZK) to the country’s GDP.   

    Pending all final regulatory and incentive approvals, including the investment incentive approval by the government of the Czech Republic and its notification to the European Commission, this would be one of the largest private sector investments in the Czech Republic’s history and would further contribute to the prosperity and economic dynamism of the Zlín region. onsemi is one of the first companies to invest in advanced semiconductor manufacturing in the Central European region.

    With this investment, the company would contribute to the strategic positioning of the region within the EU’s semiconductor value chain and demonstrate that all EU countries can benefit from the European Chips Act. The announcement also reflects onsemi’s strategic alignment with the overarching goals of the European Chips Act of increasing market share and technological advancement to strengthen the resilience of the EU’s semiconductor supply chains in times of ever-growing demand.   

    Silicon carbide is a critical material for high-power, high-temperature applications, and is extremely difficult to produce. onsemi is one of the only companies in the world with the ability to manufacture SiC-based semiconductors from crystal growth to advanced packaging solutions. By expanding its production facilities in the Czech Republic, onsemi would be faster to provide supply assurance for customers, strengthening its leadership in intelligent power solutions. This integration would also enable onsemi to leverage its latest advancements in research and development (R&D) to maximize manufacturing and production efficiency.

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  • WeEn Semiconductors Expands IGBT Product Portfolio

    WeEn Semiconductors Expands IGBT Product Portfolio

    2 Min Read

    WeEn Semiconductors announced an expansion to its range of high-performance and rugged IGBTs. Offering voltage ratings of 650V and 1200V, the new devices incorporate a fast recovery anti-parallel diode and boast extremely low leakage currents and exceptional conduction and switching characteristics at both high and low junction temperatures.

    Based on an advanced fine trench gate field-stop (FS) technology, the new IGBTs provide a more uniform electric field within the chip, support higher breakdown voltages and offer improved dynamic control. By offering the optimum trade-off between conduction and switching losses, as well as an enhanced EMI design, the devices will maximize efficiency in a wide variety of mid- to high-switching-frequency power conversion designs.

    The new IGBTs offer ratings of 650V/75A, 1200V/40A and 1200V/75A and are supplied in TO247 or TO247-4L packages depending on the selected device. All of the devices will operate with a maximum junction temperature (Tj) of 175 °C and have undergone high-voltage H3TRB (high-humidity, high-temperature and high-voltage reverse bias) and 100%-biased HTRB (high-temperature reverse bias) tests up to this maximum.

    Target applications for the new WeEn IGBTs include solar inverters, motor control systems, uninterruptible power supplies (UPS) and welding. A positive temperature coefficient simplifies parallel operation in applications where higher performance is required, while options for bare die, discrete and module product variants provide flexibility for a wide variety of target designs.

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  • Leapers Semiconductor Unveiled New LPS-Pack Series SiC Power Modules

    Leapers Semiconductor Unveiled New LPS-Pack Series SiC Power Modules

    2 Min Read

    At PCIM Europe 2024 Leapers Semiconductor unveiled the next-generation molded half-bridge SiC modules for main drive applications (LPS-Pack series). This new series was specifically developed to meet the unique requirements of a renowned international automotive manufacturer.

    Key Advantages of the New Module:

    • Innovative Design Concept: Utilizing Pressfit Pin technology for signal and current transmission, the design achieves SiC on PCB, allowing current to pass directly through the PCB. This significantly reduces the parasitic inductance of the module and system, minimizes the controller’s size, and lowers the cost of the controller’s busbar and capacitors.
    • Advanced Molding Process: The new molding process allows the module’s Tjmax to reach 200℃.
    • Unique Module Design: Ensures substrate flatness, facilitating large-area sintering between the module and the heatsink. This reduces the system’s thermal resistance and enhances yield control processes.
    • High Power Density: A single module (area < 26cm²) achieves a maximum current output of over 300 Arms. The system design is extremely compact and cost-effective.
    • Versatile Application: Suitable for platform-based and modular development applications. The series currently covers 300-600 Arms, addressing various power requirements for different customer applications.
    • Mass Production Ready: Offers superior product consistency and yield, making it more competitive than similar half-bridge modules.

    The LPS-Pack series’ distinctive design and unique advantages set it apart from other molded solutions.

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  • ROHM Introduced TRCDRIVE pack™ Series with 2-in-1 SiC Molded Modules

    ROHM Introduced TRCDRIVE pack™ Series with 2-in-1 SiC Molded Modules

    2 Min Read

    ROHM has developed four models as part of the TRCDRIVE pack™ series with 2-in-1 SiC molded modules (two of 750V-rated: BSTxxxD08P4A1x4, two of 1,200V-rated: BSTxxxD12P4A1x1) optimized for xEV (electric vehicles) traction inverters. TRCDRIVE pack™ supports up to 300kW and features high power density and a unique terminal configuration – help solving the key challenges of traction inverters in terms of miniaturization, higher efficiency, and fewer person-hours.

    As the electrification of cars rapidly advances towards achieving a decarbonized society, the development of electric powertrain systems that are more efficient, compact, and lightweight is currently progressing. However, for SiC power devices that are attracting attention as key components, achieving low loss in a small size has been a difficult challenge. ROHM solves these issues inside powertrains with its TRCDRIVE pack™.

    A trademark brand for ROHM SiC molded type modules developed specifically for traction inverter drive applications, TRCDRIVE pack™ reduces size by utilizing a unique structure that maximizes heat dissipation area. On top, ROHM’s 4th Generation SiC MOSFETs with low ON resistance are built in – resulting in an industry-leading power density 1.5 times higher than that of general SiC molded modules while greatly contributing to the miniaturization of inverters for xEVs.

    The modules are also equipped with control signal terminals using press fit pins enabling easy connection by simply pushing the gate driver board from the top, reducing installation time considerably. In addition, low inductance (5.7nH) is achieved by maximizing the current path and utilizing a two-layer bus-bar structure for the main wiring, contributing to lower losses during switching.

    TRCDRIVE pack™ is scheduled to be launched by March 2025 with a lineup of 12 models in different package sizes (Small / Large) and mounting patterns (TIM: heat dissipation sheet / Ag sinter). In addition, ROHM is developing a 6-in-1 product with built-in heat sink that is expected to facilitate rapid traction inverter design and model rollout tailored to a variety of design specifications.

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  • Toshiba Announced New Board of Directors and Company’s Auditors

    Toshiba Announced New Board of Directors and Company’s Auditors

    1 Min Read

    Toshiba Electronic Devices & Storage Corporation announced new board of directors and the company’s auditors, with an effective date of June 27, 2024. The composition of the Board of Directors and the company’s Auditors, as of June 27, 2024, will be as follows.

    Directors and Officers of the Company

    Director, President & CEO – Taro SHIMADA (Toshiba Corporation)
    Director, Vice President – Noriyasu KURIHARA
    Director – Shin KUROSAWA
    Director – Hiroyuki SHINKI (Toshiba Corporation)
    Director – Masazumi TOMISHIGE (Toshiba Corporation)
    Director – Takanori NAKAZAWA (Toshiba Corporation)
    Auditor – Hiroki OKADA
    Auditor – Shigeki SUGIMOTO (new nominee)
    Auditor – Jun TSUJIMOTO
    (new nominee)

    Retiring Directors and Auditors as of June 27, 2024

    Seiichi MORI
    Yutaka SATA (Toshiba Corporation)
    Masami TAKAOKA
    Akira NAKANISHI (Toshiba Corporation)

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  • Maspower Semiconductor Pushes the Boundaries of High-Voltage Applications with a New Power MOSFET

    Maspower Semiconductor Pushes the Boundaries of High-Voltage Applications with a New Power MOSFET

    3 Min Read

    In the current rapidly evolving electronics industry, there is an increasing demand for high-performance MOSFETs. With its superior specifications and robust design, the MS2N350HGC0 MOSFET stands out as an innovative solution for a wide range of high-voltage applications.

    The MS2N350HGC0 MOSFET has been designed to meet the rigorous specifications of contemporary electronics, offering an unparalleled combination of features and performance. This MOSFET is the ideal choice for high-voltage power supplies, capacitor discharge, pulse circuits and laser and X-ray generation systems. With a maximum drain-source voltage of 3500V and a continuous drain current of 2A, it is capable of withstanding the high voltage applications on the market.

    One of the standout features of the MS2N350HGC0 is its rapid intrinsic diode and minimized gate charge.. This enables the device to operate at high speeds, which is crucial for applications that necessitate rapid response times. Moreover, the MOSFET exhibits exceedingly low intrinsic capacitances, which further enhances its performance in demanding applications.

    The MS2N350HGC0’s on-state resistance (Rds) of 19Ω further enhances its performance, allowing for efficient energy transfer and minimal heat generation. This makes it an excellent choice for power supplies and other applications where efficiency and reliability are paramount.

    The product is packaged in accordance with the industry standard TO-247, thereby ensuring compatibility with a wide range of existing systems. Its compact size and lightweight design facilitate integration into any application.

    The MOSFET’s electrical ratings are noteworthy for their impressive nature. This product is capable of withstanding a continuous drain current of 2A at 25°C and 1.6A at 100°C, with a pulsed drain current of up to 6A. This makes it suitable for even the most demanding applications. Furthermore, its total dissipation of 463 watts at 25°C guarantees reliable operation even under heavy load conditions.

    The MS2N350HGC0 also offers excellent avalanche and thermal performance. It has an avalanche current of 1.3A and can withstand a single pulse avalanche energy of 81mJ. The operating junction temperature ranges from -55°C to 150°C, ensuring stable performance even in extreme environments.

    For ease of installation, the MS2N350HGC0 has a maximum lead temperature for soldering purposes of 300°C and a mounting torque of 1.13N·m. This ensures that the MOSFET can be securely mounted into any system with minimal effort.

    In conclusion, the MS2N350HGC0 MOSFET is a powerful and reliable solution for high-voltage applications. The superior performance, compact design, and excellent thermal stability of the product make it the optimal choice for a diverse range of applications. To gain further insight into this innovative new product, we invite you to contact our sales team. We encourage you to explore the potential of the MS2N350HGC0 MOSFET and discover how it can revolutionize your high-voltage applications.

    Original – Maspower Semiconductor

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  • Semikron Danfoss and Headspring to Develop Advanced PCS Solutions for ESS

    Semikron Danfoss and Headspring to Develop Advanced PCS Solutions for ESS

    3 Min Read

    As the deployment of Energy Storage Systems (ESS) accelerates, there is a critical need for compact and high-efficiency Power Conversion Systems (PCS) optimized for ESS applications. To address this requirement, Semikron Danfoss K.K. and Headspring Inc. have joined forces to develop advanced PCS solutions specifically for ESS, targeting mass production by 2026. This collaboration aims to enable more efficient and space-saving storage solutions.

    Energy Storage Systems are essential components for renewable energy and power grids, ensuring resilience and stable supply. The global ESS market is projected to grow by 20%-30% annually, with expectations to exceed 400 GWh of storage systems worldwide by 2030. This exponential growth is driven by the increasing share of renewable energy in the grid, necessitating the accelerated deployment of ESS solutions for stable grid operation.

    To address this rapidly growing market, Semikron Danfoss is developing a series of adaptable power solutions. Central to this initiative is the ANPC (Active Neutral Point Clamping) topology for ESS, which demonstrates a significant performance improvement by reducing power loss by over 50% compared to traditional NPC/MLI topologies. However, to fully harness the potential of ANPC technology, collaboration with Headspring is crucial. Headspring’s expertise in high-speed controller technology is vital for effectively controlling ANPC systems and ensuring optimal performance.

    Semikron Danfoss brings extensive expertise and innovation in power electronics to the ESS market. Their ANPC technology in LF/HF configuration, featuring a hybrid circuit of silicon IGBTs and silicon carbide MOSFETs, significantly enhances efficiency and cost performance. The availability of ANPC power modules in PCB-mountable, industry-standard housings reduces both material and assembly costs, making them ideal for high-volume production.

    The ANPC power modules provided by the SEMITOP E2 platform offer superior thermal performance, contributing to the downsizing and high-capacity PCS for ESS. Semikron Danfoss aims to set new benchmarks in ESS performance and value with their comprehensive design package that supports improvements in both hardware and software.

    Headspring excels in developing high-speed real-time controllers essential for power electronics applications. Headspring’s controllers combine commercial microcontrollers with FPGA technology, providing flexible programming tailored to the specific demands of power electronics applications. Headspring has participated in the Strategic Innovation Promotion Program (SIP) “Energy Systems for an IoT Society by Japan’s Cabinet Office,” leading the development of ultra-high-speed controllers for power electronics. These controllers, integrating high-speed multi-core CPUs, high-performance FPGAs, and high-speed AD converters, achieve a feedback control performance of 50MHz, approximately 1000 times faster than conventional systems.

    Semikron Danfoss and Headspring are collaborating to develop a compact, high-efficiency PCS tailored for large-scale, scalable ESS applications by integrating Semikron Danfoss’s ANPC technology-based power modules with Headspring’s advanced controller technology. Semikron Danfoss will offer the expertise for developing the power stack, which includes power modules, drive circuits, and coolers, while Headspring will be responsible for the controllers, peripheral circuits, software, and PCS integration.

    This synergy aims to create an ESS-specific PCS with optimized cost, efficiency, and size. A primary goal is to enable containerized ESS solutions to increase storage capacity per 20-foot container from 3.3MWh to 5MWh. This will establish a roadmap setting hardware and software benchmarks for ESS performance, delivering superior ESS solutions that promote the advancement of renewable energy technologies.

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  • Infineon Technologies Honored with German Brand Award

    Infineon Technologies Honored with German Brand Award

    2 Min Read

    Infineon Technologies AG received the German Brand Award in the renowned “Best of Category” as “Excellent Brands – Corporate Brand of the Year”. The German Council of Design recognizes Infineon’s exceptional brand development, highlighting the company’s dedication to establishing a consistent brand that harmonizes seamlessly with its corporate strategy.

    “To receive the German Brand Award as Corporate Brand of the Year is a special recognition for Infineon’s brand development over the past years,” said Andreas Urschitz, Member of the Management Board and Chief Marketing Officer of Infineon. “We are a global technology and thought leader with a clear vision and decisive actions. As a company, we are dedicated to driving decarbonization and digitalization through our solutions and in our business areas, together with our customers and partners. This commitment is deeply rooted in our corporate strategy, our brand, and within the entire global Infineon team.”

    The award underlines Infineon’s commitment to excellence and innovation in brand strategy and design. It also reflects a strategic and decisive approach in the brand and corporate strategy, which ultimately enhances the company’s market presence with its audience.

    The jury of the German Brand Award, which consists of members of the German Council of Design, acknowledged Infineon’s brand identity that resonates with its target audience while continuously staying true to its core values and vision.

    The jury’s statement states: “Infineon has been a strong brand for 25 years – and also ‘Corporate Brand of the Year’ in 2024. The semiconductor manufacturer has decisively developed its strategy and design to link the brand even more closely with the corporate strategy. The close integration, including vision, mission and values, is exemplary and contributes to an outstanding positioning. Only a few companies in the competitive arena have such a consistent and distinctive brand. The dedicated 360-degree brand development and, above all, implementation is credible and has a high unique selling point.”

    The German Brand Award is the award for successful brand management, initiated by Germany’s design and brand authority. Judged by a top-tier jury of experts from brand management and brand science, the German Brand Award discovers, presents and honors unique brands and brand makers.

    Original – Infineon Technology

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  • Crystal IS Announced Production of 100 mm Single-Crystal Aluminum Nitride Substrates with 99% Usable Area

    Crystal IS Announced Production of 100 mm Single-Crystal Aluminum Nitride Substrates with 99% Usable Area

    2 Min Read

    Crystal IS, an Asahi Kasei company, announced production of 100 mm diameter single-crystal aluminum nitride (AlN) substrates with 99% usable area, based on current requirements for UVC LEDs. This improved quality is steadily approaching that of Crystal IS’ existing 2-inch substrates used in the production of its UVC LEDs. The ultra-wide bandgap and high thermal conductivity of AlN helps improve device reliability and performance in both UVC LEDs and other next generation RF and power devices.

    “The improvement of our large diameter substrate quality over the last nine months showcases the expertise of our team in aluminum nitride innovation,” said Eoin Connolly, President and CEO of Crystal IS. “The inherent benefits of aluminum nitride are unlocking new applications in RF and power devices—we are excited to work with our partners to further develop this material to meet their needs.”

    This achievement follows the company’s announcement of the first ever recorded 100 mm diameter in August 2023, which won an excellence award at Semiconductor of the Year in electronic materials for the Semiconductors Category. The Semiconductor of the Year Awards are organized by Electronic Device Industry News, an industry journal published in Tokyo by SangyoTimes Inc.

    Crystal IS manufactures bulk aluminum nitride substrates at its headquarters in Green Island, New York and began selling 2-inch diameter substrates for research and development in RF and power devices in late 2023. This 100 mm diameter milestone accelerates the development of new applications on aluminum nitride substrates as it integrates into existing fabrication lines for power and RF devices using alternative materials. The company plans to offer 100 mm diameter substrates manufactured in its US facility to key partners this year as they expand their focus beyond UVC LEDs.

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  • EPC Space Introduced Two New Rad-Hard GaN Discretes

    EPC Space Introduced Two New Rad-Hard GaN Discretes

    2 Min Read

    EPC Space announced the introduction of two new rad-hard GaN discretes with low on-resistance and extremely low gate charge for high power density solutions that are lower cost and more efficient than the nearest comparable radiation-hardened silicon MOSFET.

    The EPC7001BSH is a Rad-Hard eGaN® 40 V, 50 A, 11 mΩ Surface Mount (FSMDB) and the EPC7002ASH is a Rad-Hard eGaN 40 V, 15 A, 28 mΩ Surface Mount (FSMDA). Both devices have a total dose radiation rating greater than 1,000K Rad(Si) and SEE immunity for LET of 83.7 MeV/mg/cm2 with VDS up to 100% of rated breakdown. These devices come packaged in hermetic packages in very small footprints. 

    EPC’s eGaN FETs and ICs offer a higher performing alternative to conventional rad hard silicon devices for high reliability and space applications. EPC’s Rad hard devices are significantly smaller, have 40 times better electrical performance, and lower overall cost than rad hard silicon devices. Moreover, EPC Space’s rad hard devices exhibit superior resistance to radiation, supporting higher total radiation levels and SEE LET levels compared to traditional silicon solutions.

    Part NumberDrain to Source Voltage (VDS)Drain to Source Resistance (RDS(on))Single-Pulse Drain Current (IDM)Package Size (mm)Total Dose  (TID)Heavy Ion Single Event Effects (SEE)
    EPC7001BSH4011 mΩ1205.7 x 3.91 MradSEE immunity up to LET of 83.7 MeV/mg/cm2 with VDS up to 100% of rated Breakdown
    EPC7002ASH4028 mΩ403.4 x 3.41 MradSEE immunity up to LET of 83.7 MeV/mg/cm2 with VDS up to 100% of rated Breakdown

    With higher breakdown strength, lower gate charge, lower switching losses, better thermal conductivity, and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices and enable higher switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions.

    Applications benefiting from the performance of these products include DC-DC power supplies for satellites and space mission equipment, motor drives for robotics, instrumentation and reaction wheels, deep space probes, and ion thrusters.

    “These two new additions to our rad-hard product line offer designers high power and low on-resistance solutions enabling a generation of power conversion and motor drives in space operating at higher efficiencies, and greater power densities than what is achievable with traditional silicon-based rad-hard solutions,” said Bel Lazar, CEO of EPC Space.

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