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ROHM announced the start of online sales for new silicon carbide molded modules, including the TRCDRIVE pack™, HSDIP20 and DOT-247 series. The new modules are designed to promote wider adoption of high-efficiency SiC-based power conversion technologies as global demand for energy-efficient power systems continues to grow.
The products are available for online purchase through distributors such as DigiKey and Farnell.
The TRCDRIVE pack™ is a 2-in-1 SiC molded module designed for traction inverters in electric vehicles with power levels up to 300 kW. It integrates ROHM’s fourth-generation SiC MOSFETs with low on-resistance, enabling approximately 1.5× higher power density compared with conventional SiC molded modules. The module also features a terminal layout that allows the gate driver board to be connected from the top, simplifying assembly and reducing installation time. Example applications include xEV traction inverters.
The HSDIP20 module is available in 4-in-1 and 6-in-1 configurations and targets applications such as xEV onboard chargers, EV charging stations, server power supplies and AC servo systems. The lineup includes six models rated at 750 V and seven models rated at 1200 V. The modules integrate the essential power conversion circuits into a compact package, reducing design complexity and enabling smaller power conversion systems.
The DOT-247 module is a 2-in-1 SiC module designed primarily for industrial applications such as photovoltaic inverters and uninterruptible power supply systems. It retains the versatility of the widely used TO-247 package while delivering higher power density. The module supports both half-bridge and common-source circuit configurations and helps reduce component count and PCB area in power conversion circuits.
Applications for the new SiC modules include electric vehicle systems such as onboard chargers, DC-DC converters and electric compressors, as well as industrial equipment including EV charging stations, V2X systems, PV inverters, power conditioners and AI data center power systems.
Original – ROHM
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Wolfspeed announced the appointment of Daihui Yu as regional president for Greater China, effective March 16, 2026. In this role, Yu will lead the company’s business expansion across mainland China, Hong Kong and Taiwan, with responsibility for driving regional sales growth and strengthening Wolfspeed’s brand presence.
Yu holds a degree in electrical engineering from Wuhan University of Technology and an MBA from Tsinghua University.
Before joining Wolfspeed, Yu spent more than 12 years at Infineon Technologies, most recently serving as senior vice president and head of the infrastructure and industry business for Greater China, where he led regional sales and marketing activities. Prior to that, he worked for 15 years at Schneider Electric in various sales and marketing management roles across multiple industries. Earlier in his career, he served as a control systems R&D engineer at the China Academy of Space Technology.
As regional president, Yu will assume full commercial responsibility for Wolfspeed’s operations in Greater China and will lead the development and implementation of go-to-market strategies aligned with the company’s global objectives.
CEO Robert Feurle welcomed the appointment, noting that Yu’s strategic vision, operational experience and customer-focused leadership will be important for Wolfspeed’s continued growth in the region.
The company stated that the appointment supports its ongoing efforts to strengthen its presence in the Greater China market and improve collaboration across regional supply chains.
Original – Wolfspeed
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Axcelis Technologies announced that David Ryzhik, Senior Vice President of Investor Relations and Corporate Strategy, has been appointed Interim Chief Financial Officer effective March 12. The appointment follows the departure of James Coogan, who is leaving the company to pursue a CFO role at another public company in a different industry. Coogan will remain with Axcelis through April 24 to support the transition. The company has initiated a search for a permanent CFO with the help of an executive search firm.
President and CEO Russell Low said the company is confident in Ryzhik’s ability to lead the finance organization during the transition, noting his deep knowledge of Axcelis’ business strategy, financial operations and investor relations activities. Low also highlighted Ryzhik’s involvement in the company’s pending merger with Veeco Instruments and his relationships with financial stakeholders.
Ryzhik said he is honored to assume the interim CFO position and will continue working with the leadership team to execute the company’s strategy, advance integration planning related to the Veeco merger and focus on long-term shareholder value creation.
Low also thanked outgoing CFO James Coogan for his contributions to the company, noting that during his tenure he helped strengthen the finance organization and support the company’s operational discipline and strategic positioning.
Ryzhik has more than 20 years of experience in finance and investor relations. He joined Axcelis in July 2024 as Senior Vice President of Investor Relations and Corporate Strategy. Previously, he served as Vice President of Investor Relations at MKS Instruments and earlier worked as a senior equity research analyst at Susquehanna International Group and as a senior research associate at Brean Capital. Earlier in his career he held financial roles with the New York City Mayor’s Office of Management and Budget and the New York City Fire Department.
Ryzhik holds an MBA in Financial Management and a Bachelor of Business Administration in Finance and Accounting from Pace University Lubin School of Business and serves as a board member of the Boston chapter of the National Investor Relations Institute.
Original – Axcelis Technologies
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Alpha and Omega Semiconductor announced it will showcase its latest power management solutions for AI computing, data centers and industrial applications at the Applied Power Electronics Conference (APEC). The company will present a range of new products designed to address increasing power demands in AI core computing, AI factory infrastructure and industrial power systems.
For AI core power applications, AOS introduced two new controllers targeting high-performance GPUs and system-on-chip processors used in graphics cards and AI data centers. The AOZ73216QI is a 16-phase, 2-rail controller based on the company’s proprietary AOS Advanced Transient Modulator control scheme and supports the OpenVReg16 specification. The AOZ73104QI is a 4-phase controller compliant with OVR4-22 and is designed to safely manage GPU power to maintain performance.
The company also released the AOZ71049QI, AOZ71149QI and AOZ71146QI controllers designed to power Intel IMVP9.3 Panther Lake and Wild Cat Lake CPUs. These devices support configurations of up to 9 phases and 4 rails and are currently in mass production for several OEM and ODM AI notebook platforms.
AOS also introduced the AOZ52986QI Smart Power Stage in a compact QFN3x4 package compliant with Intel’s common footprint specification. The device offers improved efficiency and thermal performance compared with conventional smart power stage solutions. In addition, the AOZ53228QI DrMOS product family provides accurate NCP and OCP protection, longer peak current capability and improved tolerance to current imbalance conditions, targeting GPU and SoC power applications in AI computing systems.
The AOZ13058DI Type-C sink and AOZ15953DI Type-C source protection switches support USB Type-C EPR 3.1 extended power levels up to 240 W. The AOZ13058DI includes overvoltage and overcurrent protection for 48 V sink applications, while the AOZ15953DI provides protection features for Type-C source implementations.
For AI factory infrastructure and data center power systems, AOS highlighted MOSFET solutions designed for high-power-density DC-DC intermediate bus converters used in AI servers. These include the AONC40202 and AONC68816 devices in DFN3.3×3.3 packages with source-down configuration, as well as the AONA66642 and AONA68815 devices in DFN5×6 drain-down packages designed to meet strict thermal requirements.
The company is also showcasing its αSiC and GaN wide bandgap solutions designed for high-voltage, high-frequency operation in AI data center power architectures with 800 V DC distribution. For AC-DC conversion, the third-generation AOM020V120X3 αSiC MOSFET and topside-cooled AOGT020V120X2Q devices provide high-voltage performance with low conduction and switching losses. These devices support applications ranging from power sidecar configurations to direct conversion from a 13.8 kV AC grid input to 800 V DC.
For high-density DC-DC conversion inside server racks, AOS GaN FET products such as the topside-cooled 650 V AOGT035V65GA1 and the 100 V AOFG018V10GA1 enable compact and efficient conversion from 800 V DC to lower voltages required by GPUs and AI accelerators.
The company also introduced the AOLV66935 MOSFET in an LFPAK8×8 package designed for 48 V hot-swap applications in AI servers. The device features an RDS(on) below 1.85 mΩ and a junction temperature rating of 175 °C to meet high safe operating area requirements.
For industrial power applications, AOS presented solutions supporting brushless DC motor systems. The portfolio includes MOSFETs, half-bridge and three-phase motor driver ICs, and dual-core motor control microcontrollers. The GTPAK package provides topside cooling through a large exposed pad designed to transfer heat directly to a heatsink instead of the PCB, improving thermal performance in motor drive applications.
The company’s motor driver ICs integrate features such as bootstrap diodes, adjustable dead-time control, sleep modes and multiple protection functions. AOS also offers dual-core motor control MCUs including the AOZ6812QI and AOZ6816QI, which combine an 8051 core for system control with a motor control engine integrating field-oriented control, PID control and SVPWM modules.
At the conference, AOS will also present an exhibitor session titled “Simplified Thermal Modeling for Power MOSFETs,” scheduled for March 25.
Original – Alpha and Omega Semiconductor
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Navitas Semiconductor announced the appointment of Tonya Stevens as Chief Financial Officer, effective March 30, 2026.
Stevens brings more than 30 years of finance and accounting experience in the semiconductor, technology, and manufacturing sectors. In her new role, she will oversee Navitas’ financial strategy, investor relations, treasury, and global finance organization while supporting the company’s path toward profitability as it expands its gallium nitride and silicon carbide power semiconductor business.
Stevens joins Navitas from Lattice Semiconductor, where she served as Chief Accounting Officer and previously as Interim CFO. During her time at Lattice, she managed global financial operations including regulatory reporting, accounting, tax, treasury, forecasting, internal controls, and investor relations.
Earlier in her career, Stevens held senior finance leadership roles at Intel Corporation, Acumed, and American Veterans Security. She began her career at PricewaterhouseCoopers, focusing on audit, financial risk management, and capital markets transactions for multinational clients. Stevens holds a bachelor’s degree in accounting from the University of Oregon and is a Certified Public Accountant.
Navitas stated that Stevens will play a key role in strengthening the company’s financial discipline and operational execution as it continues to scale its business in high-power markets such as AI data centers, grid infrastructure, performance computing, and industrial electrification.
The appointment supports the company’s ongoing strategy, referred to as Navitas 2.0, which focuses on expanding the adoption of gallium nitride and silicon carbide technologies for energy-efficient power systems. CEO Chris Allexandre said Stevens’ financial leadership experience will help guide Navitas as it grows and works toward long-term profitability.
Original – Navitas Semiconductor
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Navitas Semiconductor announced two new package options for its 5th generation GeneSiC silicon carbide MOSFET platform, introducing a top-side cooled QDPAK package and a low-profile TO-247-4L package with asymmetrical leads. The new devices target applications requiring high power density and improved thermal performance, including AI data centers and energy infrastructure systems.
The devices are based on the company’s fifth-generation trench-assisted planar silicon carbide MOSFET technology. This architecture delivers a 35% improvement in the RDS(on) multiplied by gate-drain charge figure of merit and approximately a 25% improvement in the gate-drain to gate-source charge ratio. Combined with a stable gate threshold voltage greater than 3 V, the design helps prevent parasitic turn-on and enables predictable switching behavior in high-power systems.
The new QDPAK package features a top-side cooling structure designed to address thermal limitations of traditional PCB-based cooling approaches. Heat is transferred directly through the top of the package to a heatsink, improving thermal efficiency and enabling smaller system footprints. The package also reduces parasitic inductance, supporting cleaner switching at high frequencies. It provides a compact footprint of approximately 15 mm by 21 mm with a height of 2.3 mm and includes design features that extend creepage distance while supporting applications up to 1000 VRMS.
Navitas also introduced a low-profile TO-247-4L through-hole package designed for systems where vertical space is constrained. By reducing the height of the package on the PCB, the design enables higher power density compared with conventional TO-247-4 packages. The device also incorporates asymmetrical leads, including thinner leads for the gate and Kelvin-source connections, to improve manufacturing tolerances during PCB assembly.
The new packaging options are intended for applications such as AI data center power supplies and high-performance power conversion systems where compact form factors and efficient thermal management are essential.
The initial products include four 1200 V SiC MOSFETs with on-resistance values of 6.5 mΩ and 12 mΩ, offered in both QDPAK and TO-247-4L packages. Samples are available for customer evaluation.
Original – Navitas Semiconductor
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Micro Commercial Components (MCC) has introduced a new family of trench field-stop IGBTs designed to support high-efficiency power conversion in industrial and energy applications.
The new devices are available with voltage ratings of 650 V and 1200 V and are engineered to deliver low switching losses, fast switching performance, and reliable operation under demanding electrical and thermal conditions. The IGBTs use an advanced trench and field-stop structure that improves efficiency while reducing conduction and switching losses in power conversion systems.
The devices offer high current capability with continuous current ratings of up to 40 A and pulsed current capability reaching 80 A depending on the model. A low collector-emitter saturation voltage of approximately 1.95 V helps reduce conduction losses and improve overall system efficiency.
The 1200 V variant integrates a fast and soft-recovery anti-parallel diode, enabling improved performance in both hard-switching and soft-switching converter topologies. A positive temperature coefficient supports better current sharing in parallel device configurations while improving thermal stability.
The IGBTs are rated for maximum junction temperatures up to 175 °C and are packaged in the TO-247AB power package, which provides robust mechanical strength and effective heat dissipation for high-power applications.
The initial devices in the series include the MIW40N65AH2Y and MIW40N120AH2Y models, targeting applications such as industrial motor drives, power supplies, and energy conversion systems requiring high efficiency and reliable high-temperature operation.
Original – Micro Commercial Components
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SK keyfoundry announced the development of a silicon carbide planar MOSFET process platform and revealed that it has secured its first order for a 1200 V SiC MOSFET product, marking the company’s entry into the silicon carbide compound semiconductor foundry market.
The newly developed platform supports a voltage range from 450 V to 2300 V and is designed to deliver high reliability and stability in high-voltage operating environments. According to the company, process optimization and tighter control of key manufacturing steps have enabled yields exceeding 90% while improving overall productivity.
SK keyfoundry also highlighted a customized process support service that allows device designers to fine-tune electrical characteristics and specifications according to their application requirements.
Following completion of the process platform, the company secured an order from a customer specializing in SiC device design for the development of a 1200 V MOSFET product. The device will be used in industrial equipment applications where thermal efficiency management is critical. After prototype evaluation and reliability testing, mass production is expected to begin in the first half of 2027.
The development represents the first major outcome following SK keyfoundry’s acquisition of SK powertech, which specializes in SiC technology. The integration of capabilities from both companies enabled the creation of the new platform.
SK keyfoundry stated that securing a commercial customer order immediately after completing the technology development demonstrates the maturity and competitiveness of the platform and signals readiness for commercialization in the growing compound semiconductor market. CEO Derek D. Lee said the company plans to expand its high-voltage power semiconductor offerings to meet increasing demand from global customers.
Original – SK keyfoundry
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Wolfspeed announced that its 300 mm silicon carbide technology platform could become a key materials foundation for advanced heterogeneous packaging used in AI and high-performance computing systems by the end of the decade.
The initiative builds on the company’s January 2026 milestone of producing a single-crystal 300 mm SiC wafer. Wolfspeed is now working with partners across the AI ecosystem to evaluate how large-diameter silicon carbide substrates could help address emerging performance limitations in next-generation semiconductor packaging.
As AI workloads increase, semiconductor packages are growing in size, power density, and integration complexity. These trends are pushing conventional materials used in advanced packaging toward their thermal, mechanical, and electrical limits. Wolfspeed believes silicon carbide can help address these challenges because of its high thermal conductivity, mechanical robustness, and favorable electrical characteristics.
Using a 300 mm SiC wafer format also aligns with the existing semiconductor manufacturing infrastructure used for advanced silicon devices. This compatibility allows potential integration with current wafer-level packaging processes and fabrication tools while supporting scalable high-volume manufacturing.
The company is collaborating with foundries, outsourced semiconductor assembly and test providers, system architects, and research institutions to study the feasibility of silicon carbide interposers and related packaging components. The program aims to evaluate performance benefits, reliability, and integration pathways for hybrid silicon–silicon carbide packaging architectures.
According to Wolfspeed, the larger 300 mm wafer format could enable fabrication of larger interposers and heat spreaders required for increasingly large and complex semiconductor packages used in AI and HPC systems. The approach is intended to support the industry’s transition toward higher integration levels while maintaining manufacturability and ecosystem compatibility.
Original – Wolfspeed
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iDEAL Semiconductor announced an expansion of its SuperQ 200 V MOSFET portfolio, introducing new devices that deliver industry-leading on-resistance in widely used power semiconductor packages.
The iS20M5R5S1T sets a new benchmark as the lowest RDS(on) 200 V MOSFET available in the industry-standard TOLL package, while the newly introduced iS20M6R3S1P offers the lowest RDS(on) for a 200 V MOSFET in the TO-220 package. Together, these devices provide high efficiency and design flexibility for both surface-mount and through-hole power electronics applications.
The iS20M5R5S1T achieves a maximum RDS(on) of 5.5 mΩ in a compact TOLL package, enabling higher power density and reduced conduction losses in space-constrained designs. The complementary iS20M6R3S1P provides a maximum RDS(on) of 6.3 mΩ in the TO-220 package, supporting applications that require through-hole assembly, mechanical mounting, or direct heatsinking.
iDEAL Semiconductor plans to further expand its 200 V SuperQ MOSFET lineup later in 2026 by introducing the same 5.5 mΩ performance level in additional packages, including a D2PAK-7L variant optimized for high-current surface-mount designs and a TOLT package designed for compact layouts with top-side cooling capabilities.
The SuperQ 200 V MOSFET devices are primarily targeted at demanding motor-drive applications where efficiency, robustness, and fault tolerance are critical. Key characteristics include high short-circuit withstand capability, improved device paralleling with ±0.5 V gate threshold voltage tolerance, a maximum operating temperature rating of 175 °C, and current handling capability up to 151 A in the TOLL package and 172 A in the TO-220 package. The devices are also avalanche-rated and undergo 100% unclamped inductive switching testing in production.
Beyond motor drives, the MOSFETs can be used in switched-mode power supplies, secondary-side synchronous rectification circuits, and other high-current industrial or battery-powered systems where efficiency and thermal performance are important.
The iS20M5R5S1T and iS20M6R3S1P devices are currently in volume production and available through the company’s global distribution network. Additional devices in the series are currently sampling and are expected to enter production later in 2026.
Original – iDEAL Semiconductor
