• Navitas Semiconductor And Cyient Semiconductors Announce Long-Term Partnership To Build India’s GaN Ecosystem

    Navitas Semiconductor and Cyient Semiconductors Announce Long-Term Partnership to Build India’s GaN Ecosystem

    2 Min Read

    Navitas Semiconductor Corporation and Cyient Semiconductors Private Limited, a fast-growing provider of ASIC, ASSP and power solutions, announced a strategic long-term partnership to accelerate GaN adoption in India and establish a complete end-to-end GaN ecosystem.

    The collaboration outlines co-development of GaN products, digital and mixed-signal ICs, GaN-based system modules and design-enablement platforms addressing high-voltage, high-power markets in India, including AI data centers, electric mobility, performance computing, energy grid infrastructure and industrial electrification. The partners also intend to strengthen a local supply chain and manufacturing base aligned with the Government of India’s “Make in India” initiative, while deploying IC technologies to speed solution development in these segments.

    Planned deliverables include products based on Navitas’ current GaN platforms alongside new devices tailored to India’s market needs. Cyient Semiconductors will focus on building a secure, local supply chain and ecosystem to reduce time-to-market for developers and OEMs across the region.

    “This partnership represents a pivotal step in India’s semiconductor future in solving the complexities of power delivery at high voltages,” said Suman Narayan, CEO, Cyient Semiconductors. “By combining Navitas’ proven GaN technology with Cyient Semi’s design, manufacturing and supply-chain strengths, we’re creating a self-sustaining ecosystem that will accelerate the market adoption of GaN. Our goal is to make GaN accessible to every OEM looking to design, build and scale from India.”

    “I believe the growth of GaN technology in India will exceed global trends, and Cyient Semiconductors is the perfect partner for Navitas to drive this revolution,” said Chris Allexandre, President and CEO, Navitas Semiconductor. “Together, Navitas and Cyient will power India’s vision of India for India—innovation, by India, for the world.”

    The initiative is designed to empower Indian design houses and OEMs with locally sourced GaN components, manufacturing support and engineering collaboration, enabling faster development cycles and lowering barriers to GaN adoption. It also reinforces Cyient Semiconductors’ focus on driving semiconductor innovation, localization and scalability across critical technology sectors, while establishing a direct channel for Indian customers to access GaN technology with reliable procurement and technical support.

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  • Disco Corporation Unveils 300 mm Fully Automatic Grinder and Dry Polishing Wheels for Small-Die Devices

    Disco Corporation Unveils 300 mm Fully Automatic Grinder and Dry Polishing Wheels for Small-Die Devices

    2 Min Read

    DISCO CORPORATION announced two advancements to support wafer thinning and post-thinning quality at scale: the DFG8561, a fully automatic grinder supporting Φ300 mm wafers, and DP26, a new dry polishing wheel series engineered for small-die devices. Both will be exhibited at SEMICON Japan 2025 (December 17–19, Tokyo Big Sight).

    Developed to address accelerating migration from 5-/6-inch to 8-inch and 300 mm wafers for automotive and home-appliance MCUs, analog ICs and sensors, the DFG8561 targets higher throughput, tighter thickness control and broader material compatibility. Key enhancements include a low-vibration, low-thermal-expansion rotation axis on the wafer retaining table to improve within-wafer and wafer-to-wafer thickness accuracy; a high-power 6.3 kW spindle for difficult-to-grind materials such as SiC and sapphire; and optimized transfer/cleaning that reduces processing time, delivering 1.6× productivity versus the conventional model. A built-in vacuum unit cuts footprint by 12%, boosting output per unit floor area. Usability upgrades enable recipe configuration per wafer within the same cassette for multi-variety, low-volume production, with main data types visualized as graphs on a 19-inch monitor.

    Complementing the grinder, DP26 dry polishing wheels are designed to remove post-DBG damage on small-die wafers in memory and RFID-class applications where further thinning and high mechanical strength are critical. Using an improved pad design and materials, DP26 achieves stable processing of approximately 1 mm × 1 mm small die while maintaining post-process die strength, and delivers a more stable removal amount during polishing compared with the conventional product—contributing to reduced TTV within the wafer.

    Together, DFG8561 and DP26 provide an integrated approach from high-accuracy 300 mm grinding to damage-mitigating dry polishing for small-die devices, supporting higher productivity, tighter process control and robust device strength across advanced back-end manufacturing and OSAT environments.

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  • onsemi Extends Strategic Collaboration With FORVIA HELLA, Adopts PowerTrench® T10 MOSFETs Across Advanced Automotive Platforms

    onsemi Extends Strategic Collaboration With FORVIA HELLA, Adopts PowerTrench® T10 MOSFETs Across Advanced Automotive Platforms

    2 Min Read

    onsemi announced an extension of its long-standing strategic engagement with FORVIA HELLA, with the adoption of onsemi’s PowerTrench® T10 MOSFET technology across FORVIA HELLA’s advanced automotive platforms. The new long-term agreement deepens the companies’ collaboration and positions them to deliver innovative solutions through the next decade of automotive transformation.

    PowerTrench® T10 MOSFET technology combines ultra-low conduction and switching losses to raise efficiency and power density in compact footprints while maintaining high reliability. The shielded gate power trench architecture reduces output capacitance and improves key figures of merit via lower drain-to-source resistance and gate charge—enablers for more efficient, cost-effective designs across a wide range of automotive applications. T10 power MOSFETs are manufactured at onsemi’s state-of-the-art facility in East Fishkill, NY.

    “onsemi’s next-generation MOSFETs are a key enabler for our advanced automotive platforms. This collaboration allows us to offer our customers future-proof solutions with greater efficiency and reliability, supporting electrification and delivering innovative, cost-effective solutions that meet the demands of modern automotive systems,” said Sven Hoenecke, Executive Vice President, Purchasing, FORVIA HELLA.

    “This extension underscores the strength of our 25-year collaboration with FORVIA HELLA and highlights the trust they place in onsemi to deliver next-generation power solutions. The integration of the T10 power MOSFETs will help enable the future of electrified and software-defined vehicles, where efficiency, performance, and scalability are critical,” said Simon Keeton, Group President, Power Solutions Group, onsemi.

    As vehicle electrification accelerates and demand grows for higher-performing, compact and cost-effective power systems, the collaboration underscores the central role of power semiconductors in next-generation automotive architectures. By combining onsemi’s intelligent power portfolio with FORVIA HELLA’s systems expertise, the companies are addressing the rising electrical demands of automated driving, safety and electrification.

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  • Navitas Semiconductor Expands Global Distribution Partnership With Avnet

    Navitas Semiconductor Expands Global Distribution Partnership With Avnet

    2 Min Read

    Navitas Semiconductor announced an expanded distribution agreement with Avnet, establishing Avnet as a globally franchised strategic distribution partner.

    The move is part of Navitas’ ongoing consolidation of franchised distribution and significantly broadens its channel presence through Avnet, one of the world’s largest electronic component distributors. It follows strong traction by Avnet Silica in serving customers across Europe.

    Under the agreement, Avnet will provide technical and commercial support for Navitas’ GaN and SiC high-voltage, high-power wide bandgap devices. The partnership is intended to accelerate deployments in AI data centers, high-performance computing, renewable energy, grid infrastructure and industrial electrification.

    The consolidated model allows customers to benefit from regional specialists such as Avnet Silica in Europe, while gaining a globally aligned framework with Avnet across all geographies for fast access to Navitas products and consistent, expert technical support.

    “This builds considerably on the successful role that Avnet Silica has played in reaching and developing our strategically important European customers,” said Alessandro Squeri, Vice President Global Distribution, Operations & Transformation, Navitas. “As we consolidate our distribution network to align with high-power market focus, expanding Avnet’s franchise globally was a natural next step, and their engineering expertise, global reach and deep customer relationships make them an ideal partner to accelerate adoption of our GaN and SiC platforms worldwide.”

    “The global expansion of the Avnet Silica partnership is testament to the strength of our teams in supporting customers in these demanding high-power markets,” said Alex Iuorio, Senior Vice President, Global Supplier Development, Avnet. “Navitas’ leadership in wide bandgap innovation aligns strongly with Avnet’s commitment to enabling advanced, energy-efficient solutions. We look forward to extending this collaboration as customers drive the next wave of electrification and high-performance power design.”

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  • VisIC Technologies Raises $26 Million In Series B To Accelerate D³GaN™ EV Power Devices

    VisIC Technologies Raises $26 Million In Series B To Accelerate D³GaN™ EV Power Devices

    2 Min Read

    VisIC Technologies announced the successful second closing of its Round B funding, securing $26 million to advance GaN power semiconductor technology for electric vehicles. The round was led by a global semiconductor leader, with Hyundai Motor Company and Kia joining as a strategic investor. The milestone strengthens VisIC’s position in high-performance GaN power devices for automotive traction inverters and next-generation mobility.

    The global EV market is pushing for higher efficiency, longer driving range, and more sustainable power electronics. Traditional silicon is reaching its limits, and while SiC offers performance advantages, cost remains a barrier for mass adoption. VisIC’s D³GaN™ platform targets both 400 V and 800 V EV architectures, enabling lighter, smaller, and more energy-efficient traction inverters with scalability and reliability.

    The new funding will accelerate key programs:

    • Optimization, qualification, and release of Gen3 750 V GaN dice and power modules
    • Development of Gen4 1350 V GaN technology to cover the full spectrum of EV designs
    • Supply-chain stabilization and ramp-up of GaN deliveries for traction inverters
    • Expansion of GaN solutions for emerging 800 V data-center power applications

    “This investment marks a major milestone for VisIC and the global EV industry. Our D³GaN technology is redefining power electronics for electric vehicles, and the support of our strategic partners accelerates our mission to deliver high-efficiency, scalable solutions for the next generation of mobility,” said Tamara Baksht, CEO of VisIC Technologies.

    “Hyundai Motor Company and Kia are committed to advancing sustainable mobility. Partnering with VisIC enables us to integrate cutting-edge GaN technologies into our EV platforms, enhancing efficiency, reliability, and performance as we shape the future of electric transportation,” said Hyundai Motor Company and Kia.

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  • EIB And STMicroelectronics Sign €500 Million Financing Agreement To Strengthen Europe’s Semiconductor Competitiveness

    EIB And STMicroelectronics Sign €500 Million Financing Agreement To Strengthen Europe’s Semiconductor Competitiveness

    2 Min Read

    The European Investment Bank (EIB) and STMicroelectronics have signed a €500 million financing agreement to support Europe’s competitiveness and strategic autonomy. This is the first tranche of a broader €1 billion credit line recently approved by the EIB for ST, a leading semiconductor manufacturer with a strong European footprint in Italy, France and Malta serving automotive, industrial, personal electronics and communication infrastructure markets.

    The new financing will back ST’s investments in innovative semiconductor technologies and devices across Italy and France, spanning both research and development and high-volume manufacturing. Approximately 60% of the funding will support manufacturing capabilities at key sites including Catania, Agrate and Crolles, with the remaining 40% directed to R&D. Since 1994, the EIB has supported nine ST projects totaling about €4.2 billion.

    “Europe’s ability to lead in semiconductor innovation is vital for our competitiveness, resilience and climate goals. This agreement reflects the EIB’s commitment to supporting strategic industries that enable the green and digital transitions and strengthen Europe’s technological sovereignty,” said Gelsomina Vigliotti, EIB Vice-President.

    “ST continues to be committed to strengthening Europe’s semiconductor ecosystem, and this significant loan from EIB aims at bolstering our efforts in R&D for differentiated technologies and high-volume manufacturing across our sites in Italy and France,” said Jean-Marc Chery, President and CEO of STMicroelectronics. “ST’s longstanding collaboration with the EIB underscores our commitment to ensuring European technology leadership in the global semiconductor market.”

    “Semiconductors are at the heart of modern economies, powering everything from electric vehicles to digital infrastructure. By financing ST’s investments in research and advanced manufacturing, we are helping Europe secure critical technologies and create high-skilled jobs for the future,” added Ambroise Fayolle, EIB Vice-President.

    The announcement follows last week’s visit by an EIB delegation led by Vice-Presidents Gelsomina Vigliotti and Ambroise Fayolle to ST’s Catania facility, a state-of-the-art site covering the full Silicon Carbide (SiC) value chain and a key element of the Bank’s financing focus.

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  • Infineon Runs Global Operations on 100 Percent Green Electricity, Exceeds 2025 Emissions Goal

    Infineon Runs Global Operations on 100% Green Electricity, Exceeds 2025 Emissions Goal

    2 Min Read

    Infineon Technologies AG announced that all of its global operations are now powered by 100% green electricity—an important milestone on the company’s path to carbon neutrality by 2030. Infineon has also surpassed its 2025 interim target for Scope 1 and 2 emissions, achieving a reduction of more than 80% versus the 2019 base year, while doubling revenue over the same period. Earlier this year in May, the Science Based Targets initiative (SBTi) validated the company’s science-based targets.

    “Infineon semiconductors help societies decarbonize while meeting the growing energy demands of modern life,” said Elke Reichart, Member of the Management Board of Infineon and Chief Digital and Sustainability Officer. “We at Infineon continue to decarbonize our own value creation. We are proud that all Infineon locations globally are now running on 100% green electricity.”

    The transition builds on a multi-year program to cut CO2 emissions and improve resource efficiency in manufacturing. Infineon converted its European sites to 100% green electricity in 2021, followed by North America in 2022. Major manufacturing sites in Malaysia, Kulim and Melaka, transitioned in 2023. During 2024 and 2025, remaining production locations in China, Indonesia and Singapore completed the shift, alongside all Research, Development, Sales and Marketing sites worldwide.

    Infineon’s achievement aligns with the RE100 standard, reflecting its commitment to long-term renewable sourcing. This year, the company signed long-term Power Purchase Agreements for wind and solar in Germany and Spain. On-site photovoltaic installations are being added in Kulim and Melaka, while facilities in Warstein, Regensburg, Villach, Wuxi and Singapore have been generating solar power for some time.

    In parallel, Infineon is expanding silicon carbide (SiC) production in Dresden (Germany) and Kulim (Malaysia) to support the global build-out of sustainable power. Its semiconductor innovation underpins energy generation from solar and wind, grid stabilization and the efficient, reliable powering of Artificial Intelligence. To advance state-of-the-art sustainable manufacturing, the company is deploying the latest greenhouse gas abatement systems and highly efficient equipment in addition to sourcing renewable energy.

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  • Siemens and GlobalFoundries Enter Strategic Collaboration to Advance AI-Enabled Semiconductor Manufacturing

    Siemens and GlobalFoundries Enter Strategic Collaboration to Advance AI-Enabled Semiconductor Manufacturing

    3 Min Read

    Siemens and GlobalFoundries have formed a new strategic collaboration to combine complementary AI-driven capabilities that enhance semiconductor manufacturing and adjacent advanced industries, targeting gains in efficiency, security and reliability. Under a new memorandum of understanding, the companies will focus on fab automation, electrification, and digital solutions and software spanning chip development through product lifecycle management.

    A central element of the collaboration is the deployment of AI-enabled software, sensors and real-time control systems in fab automation to address rising demand for reliable semiconductors and autonomous platforms. By leveraging centralized automation and predictive maintenance, Siemens and GF aim to increase equipment availability and operational efficiency in chip production, with solutions designed to scale across other advanced industries. The partners intend to develop and deploy these capabilities within their own operations to deliver enhanced offerings.

    The expanded relationship comes amid unprecedented demand for essential semiconductors and autonomous platforms in artificial intelligence, defense, energy and connectivity. By teaming up, Siemens and GF plan to accelerate growth, strengthen security and reliability, and extend their impact across the ecosystem.

    “Our economy runs on Silicon—one wafer at a time. Chips are critical for applications like robotics or connectivity and for bringing AI into the physical world and industry. We are collaborating to make global semiconductor supply chains more resilient and to enable efficient localized manufacturing around the world,” said Cedrik Neike, Member of the Managing Board of Siemens AG and CEO Digital Industries.

    “Secure, locally manufactured semiconductors are at the core of the AI transition—from cloud to the physical world, bringing intelligence into devices we use every day and enabling applications we couldn’t imagine a few years ago,” said Tim Breen, CEO of GlobalFoundries. “Our unique collaboration with Siemens allows us to go faster—to build the technologies that make this possible—differentiated, energy-efficient, connected and secure chips across a wide range of next-generation applications.”

    Siemens brings a comprehensive portfolio of industrial, energy and building automation and digitalization technologies, including advanced software for chip design and manufacturing, fab automation and product lifecycle management. Using these solutions, the companies will enable collaboration across the semiconductor lifecycle and deliver high-performance, reliable devices at scale.

    GF, together with MIPS, a GF company and global leader in RISC-V processor IP, contributes process technology and design capabilities to accelerate tailored solutions that support Siemens’ goal of enabling autonomous platforms and physical AI chips at scale. The publicly listed U.S. company operates manufacturing facilities in the USA, Asia and Europe, including Europe’s largest semiconductor production site in Dresden with approximately 3,000 employees.

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  • Wise Integration, Powernet, And KEC Sign MoU To Co-Develop AI-Server SMPS Solutions In South Korea

    Wise Integration, Powernet, And KEC Sign MoU To Co-Develop AI-Server SMPS Solutions In South Korea

    2 Min Read

    Wise Integration, Powernet and KEC have signed a strategic memorandum of understanding to co-develop next-generation switched-mode power supply (SMPS) solutions tailored for AI server applications in South Korea. The collaboration supports the country’s broader push to scale AI infrastructure and deploy higher-density data centers.

    Under the agreement, Wise Integration will provide GaN power devices, digital-control know-how and technical support. Powernet Technologies Corporation will lead new SMPS designs built on Wise’s WiseGan® and WiseWare® technologies. KEC Corporation will oversee backend manufacturing, including module integration and system-in-package production optimized for the thermal and reliability demands of AI-server racks.

    The partners expect the program to accelerate competitive AI-server power supply designs, create new business opportunities in Korea’s AI-server market and shorten time-to-market by leveraging WiseGan® and WiseWare®. The initiative extends an earlier Wise Integration–Powernet collaboration focused on compact, digitally controlled power supplies for faster, smaller and more energy-efficient equipment.

    AI servers require high power, generate significant heat and depend on SMPS architectures that convert high-voltage inputs (such as 400 V) to stable 48 V rails with minimal loss. GaN devices paired with digital control enable higher switching frequencies, improved efficiency and tighter management of fast, high-current load transients—attributes well suited to these workloads.

    The effort aligns with South Korea’s investments in AI-dedicated data centers, including high-performance GPU clusters and digital infrastructure that demand more efficient, compact and scalable power-conversion systems. “Korea is moving quickly to build the next generation of AI data centers, and power architecture is a critical piece of that effort. Working with Powernet and KEC lets us bring GaN-based digital control into server-grade designs at scale—delivering the efficiency, thermal performance, and responsiveness that modern AI hardware depends on,” said Ghislain Kaiser, CEO of Wise Integration.

    Beyond the MoU, Wise Integration continues to broaden its GaN plus digital-control platform to support partners as switching frequencies rise, thermal budgets tighten and efficiency targets become more aggressive. The company recently introduced WiseWare® 1.0 for totem-pole PFC and LLC topologies, a fully digital controller that, while aimed today at gaming, displays and industrial systems, shares the same architecture—high-frequency GaN operation, compact form factor and digitally managed efficiency—that naturally extends to server-class designs envisioned under this Korea-focused collaboration.

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  • Wolfspeed To Supply Silicon Carbide MOSFETs For Toyota Onboard Charger Systems

    Wolfspeed To Supply Silicon Carbide MOSFETs For Toyota Onboard Charger Systems

    2 Min Read

    Wolfspeed Inc. announced that its automotive MOSFETs will power onboard charger systems for Toyota Battery Electric Vehicles. The adoption underscores Toyota’s confidence in Wolfspeed’s ability to meet stringent quality and long-term reliability requirements.

    “Toyota is known for its uncompromising approach to quality and reliability, and we’re honored to be supporting their next wave of electrification,” said Robert Feurle, Chief Executive Officer. “Wolfspeed’s U.S.-based supply chain and domestic silicon carbide manufacturing footprint ensure the stability and continuity they need to achieve their electrification goals.”

    Silicon carbide has become the industry standard for high-voltage onboard power systems as the automotive sector accelerates toward clean energy vehicles. Beyond enabling fast, efficient, high-power-density traction inverters, silicon carbide brings clear advantages to onboard automotive auxiliary power systems such as onboard chargers—supporting shorter charging times, reducing energy loss across the vehicle, improving driving range, and lowering recharge costs over the vehicle’s lifespan.

    “Our work with Toyota is built upon years of trust in engineering expertise, supply reliability, as well as a shared obsession with quality,” said Cengiz Balkas, Chief Business Officer. “This reinforces our role in driving electrification with silicon carbide technology that delivers performance, efficiency and safety.”

    Wolfspeed supports a broad range of EV platforms directly with OEMs and through Tier 1 partners, making its technology a foundational element of the expanding EV ecosystem.

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