In a significant advancement for the high-voltage power electronics industry, Maspower Semiconductor has introduced the MS2N300HGC0 MOSFET, a powerful new component that sets new benchmarks in performance and reliability.

This cutting-edge product, housed in the TO-247 package, offers unprecedented performance with its robust 3000V voltage rating and 2A continuous current capability. What truly sets this MOSFET apart, however, is its rigorous testing and certification. The MS2N300HGC0 has undergone 100% avalanche testing, ensuring exceptional resilience and durability in demanding applications.

Moreover, the MS2N300HGC0’s Fast Intrinsic Diode design and minimized gate charge contribute to its high-speed switching capabilities, making it a perfect fit for high-voltage power supplies, PV inverters, switching applications and more. Its very low intrinsic capacitance further enhance its performance, delivering maximum efficiency and reliability. Maspower’s commitment to innovation and reliability is evident in the MS2N300HGC0, which has been rigorously tested and certified to meet the highest industry standards.

“The MS2N300HGC0 is a testament to our commitment to pushing the boundaries of high-voltage power electronics,” said a spokesperson from Maspower. “We are proud to offer this state-of-the-art MOSFET to our customers, enabling them to achieve unprecedented levels of performance and reliability in their applications.”

Original – Maspower Semiconductor