According to the information on the official website of the China National Intellectual Property Administration (CNIPA) on April 2, 2024, the key claims 6, 9, 10, 13, 14, 17, 18 and 22-26 of the Chinese patent titled “Enhancement mode GaN HEMT device and method for fabricating the same” (Patent No. ZL201080015388.2) owned by Efficient Power Conversion Corp (“EPC”) have been maintained valid during an invalidation procedure (case number: 4W116775), which was requested by the petitioner Innoscience (Suzhou) Technology Co., Ltd. (“Innoscience”).

As compared with products using silicon-based devices, transistors and integrated circuits using GaN-based technology are superior in terms of higher efficiency, reduced weight and lower cost.  The key claims which are held valid as mentioned above cover core technologies of the design and the manufacturing process of EPC’s proprietary enhancement-mode GaN-based power semiconductor devices.  By virtue of multiple innovations including such technologies, EPC has successfully brought GaN-based power devices from laboratory to market.

In May 2023, EPC filed complaints before the US Federal Court and the US International Trade Commission (ITC), asserting that Innoscience (Zhuhai) Technology Co., Ltd. and its affiliate Innoscience infringed four patents of its foundational patent portfolio, which include the US counterpart of this Chinese patent ZL201080015388.2. As part of the responses to those complaints, Innoscience filed, in September 2023, a request to invalidate the EPC’s Chinese counterpart patent ZL201080015388.2 before the CNIPA.

Pursuant to the Chinese Patent Law, Innoscience may appeal this invalidation decision before the Beijing Intellectual Property Court within three months.

Original – Efficient Power Conversion