• Mitsubishi Electric and Partners Elucidate Hydrogen-Driven Free-Electron Generation in Silicon

    Mitsubishi Electric and Partners Elucidate Hydrogen-Driven Free-Electron Generation in Silicon

    1 Min Read

    Mitsubishi Electric Corporation, Institute of Science Tokyo, University of Tsukuba and Quemix Corporation announced a world-first explanation of how hydrogen creates free electrons in silicon through its interaction with specific crystal defects—an advance that can cut power losses in insulated gate bipolar transistors (IGBTs) and open pathways for future ultra-wide bandgap devices.

    Using first-principles calculations alongside electrical, optical and ESR measurements, the team showed that when hydrogen binds near the I4 defect (an interstitial silicon pair), it shifts the defect’s electronic states to favor electron release; the electron associated with hydrogen moves to the defect, which then emits a free electron.

    Mitsubishi Electric also reported technical demonstrations on 1,200 V-class devices showing total power-loss reductions of 10% in IGBTs and 20% in diodes versus its 7th-generation products—performance gains linked to the newly clarified hydrogen mechanism and complementary substrate thinning.

    Beyond silicon, initial calculations suggest the approach could help control electron levels in ultra-wide bandgap materials such as diamond and AlN, which are notoriously difficult to dope, potentially benefiting power semiconductors, RF devices and quantum sensors.

    The collaborators aim to extend this mechanism to next-generation materials to further improve device efficiency and support decarbonization goals.

    Original – Mitsubishi Electric

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  • Micro Commercial Components Launches 200 V N-Channel Power MOSFET For High-Density, High-Efficiency Systems

    Micro Commercial Components Launches 200 V N-Channel Power MOSFET For High-Density, High-Efficiency Systems

    2 Min Read

    Micro Commercial Components introduced the MCAC055N20YH, a 200 V N-channel power MOSFET designed for compact, high-efficiency power designs where power density, footprint, and thermal performance are critical. Built on advanced Split-Gate Trench technology and housed in a space-saving DFN5060 package, the device combines fast switching with low conduction losses and robust thermal characteristics for applications spanning data center power, telecom infrastructure, industrial automation, renewable energy systems, and professional audio equipment.

    With a 200 V VDS rating, 34 A continuous current capability, and a low RDS(on) of 55 mΩ, the MCAC055N20YH provides ample margin for voltage transients while minimizing heat and energy loss. Its 0.9 °C/W junction-to-case thermal resistance supports stable operation under heavy loads, enabling cooler, longer-lasting systems.

    Features & benefits:

    • 200 V N-channel power MOSFET for high-voltage industrial and telecom applications
    • Split-Gate Trench technology optimized for low on-resistance and high switching speed
    • Low RDS(on) of 0.055 Ω (max) at VGS = 10 V to reduce conduction losses and heat generation
    • Excellent thermal performance with 0.9 °C/W RθJC for efficient heat transfer and stable high-power operation
    • Compact DFN5060 package (5 mm × 6 mm) for high power density in space-constrained designs
    • 200 V drain-source rating provides headroom for spikes and ringing in demanding 48–100 V systems

    Original – Micro Commercial Components

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  • MCC Launches 200 V MOSFET To Boost Efficiency, Thermal Performance And Power Density

    MCC Launches 200 V MOSFET To Boost Efficiency, Thermal Performance And Power Density

    1 Min Read

    Micro Commercial Components introduced the MCTL011N20YH, a 200 V N-channel MOSFET designed for high-power systems where efficiency, thermal performance and board space are critical. Built on Split Gate Trench MOSFET Technology and housed in a thermally efficient TOLL-8L package, the device delivers low conduction and switching losses with low parasitic inductance—supporting fast, clean transitions and stable operation up to Tj(max) = 175 °C.

    The optimized thermal path of the TOLL-8L package improves heat dissipation, enabling higher current handling with reduced temperature rise and lighter cooling requirements. This helps engineers increase power density, meet tight efficiency targets and enhance long-term reliability in motor drivers, DC-DC converters, UPS systems and server power modules.

    Features and benefits:

    • 200 V N-channel power MOSFET
    • Split Gate Trench MOSFET Technology for low losses and high efficiency
    • TOLL-8L surface-mount power package with compact footprint
    • Low parasitic inductance for fast, clean switching
    • Excellent thermal performance and heat dissipation
    • High current handling capability
    • Maximum junction temperature: Tj(max) = 175 °C
    • Mechanically robust package suited for harsh and industrial environments

    Original – Micro Commercial Components

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  • Micro Commercial Components Introduces 40 V N-Channel MOSFET For High-Efficiency, Space-Constrained Designs

    Micro Commercial Components Introduces 40 V N-Channel MOSFET For High-Efficiency, Space-Constrained Designs

    2 Min Read

    Micro Commercial Components has introduced the MCAC2D6N04Y, a 40 V N-channel MOSFET in a compact DFN5060 package, engineered for applications where efficiency, power density and board space are equally critical. With an ultra-low RDS(on) of 2.6 mΩ at VGS = 10 V and a continuous drain current rating of 166 A, the device minimizes conduction losses and heat generation, enabling more power delivery in a smaller footprint while easing thermal design. Its combination of very low on-resistance, fast and efficient switching, and small package size makes it a strong fit for battery protection circuits, compact DC-DC converters, motor drive stages and other space-constrained power systems.

    Leveraging a Split Gate Trench structure optimized for low gate charge (Qg = 38.3 nC), the MCAC2D6N04Y-TP supports high-frequency operation where switching losses and EMI must be tightly controlled. A maximum junction temperature of 175 °C provides ample headroom under demanding load conditions, reducing heatsink requirements and lowering overall thermal overhead.

    Features & benefits:

    • 40 V N-channel power MOSFET
    • Ultra-low RDS(on) of 2.6 mΩ (max) at VGS = 10 V to cut conduction losses and improve system efficiency
    • Split Gate Trench technology with low gate charge (Qg = 38.3 nC) for fast, efficient switching
    • High continuous drain current (ID) of 166 A for robust power handling
    • Maximum junction temperature of 175 °C for enhanced ruggedness and relaxed cooling needs
    • Compact DFN5060 package (5.0 mm × 6.0 mm) to save board area and support high power density layouts
    • RoHS compliant and halogen-free for global environmental and regulatory alignment

    Original – Micro Commercial Components

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  • MCC Unveils 100V Power MOSFET with Topside Cooling for Superior Thermal Efficiency in High-Performance Systems

    MCC Unveils 100V Power MOSFET with Topside Cooling for Superior Thermal Efficiency in High-Performance Systems

    2 Min Read

    Micro Commercial Components (MCC) has introduced the MCTT1D7N10Y, a 100V power MOSFET housed in a TO-Leaded Topside Cooling (TOLT) package, engineered to deliver exceptional thermal performance and rugged reliability. Designed for space-constrained, high-demand environments such as industrial systems and server-grade power electronics, the MCTT1D7N10Y combines high current capability with advanced thermal management.

    Topside cooling is a thermal architecture that allows heat to be dissipated directly from the top of the package. Unlike conventional bottom-cooled designs that rely on the printed circuit board (PCB) for heat transfer, the TOLT package features an exposed drain pad on the top surface, enabling direct thermal contact with a heatsink, cold plate, or thermal interface material (TIM). This approach significantly shortens the thermal path, resulting in more efficient heat dissipation and enhanced device performance.

    By removing the PCB from the primary thermal path, topside cooling enables lower junction temperatures, greater current handling with minimal derating, simplified PCB layouts, and extended system longevity through reduced thermal stress on adjacent components.

    Key features of the MCTT1D7N10Y include:

    • 100V N-channel MOSFET with maximum RDS(on) of 1.7 mΩ
    • TO-Leaded Topside Cooling (TOLT) package with exposed drain for efficient heat transfer
    • Direct die-to-heatsink thermal path bypassing the PCB
    • Junction-to-case thermal resistance (RthJC) of 0.36 K/W
    • Low-profile package suited for compact designs
    • High current capability with strong thermal cycling robustness

    With its combination of electrical performance and advanced packaging, the MCTT1D7N10Y offers an ideal solution for designers seeking to enhance power density, efficiency, and reliability in next-generation industrial and data-centric power applications.

    Original – Micro Commercial Components

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  • Mitsubishi Electric to Launch New High-Isolation 4.5kV/1,200A HVIGBT Modules with Enhanced Moisture Resistance and Efficiency

    Mitsubishi Electric to Launch New High-Isolation 4.5kV/1,200A HVIGBT Modules with Enhanced Moisture Resistance and Efficiency

    2 Min Read

    Mitsubishi Electric Corporation has announced the launch of new standard-isolation (6.0 kVrms) and high-isolation (10.2 kVrms) modules in its 4.5 kV / 1,200 A XB Series of high-voltage insulated-gate bipolar transistors (HVIGBTs), scheduled for market release on December 9, 2025.

    These newly developed high-capacity power semiconductor modules are designed to deliver improved moisture resistance and operational reliability, supporting efficient inverter performance in large-scale industrial equipment such as railcars, even under challenging environmental conditions including outdoor use.

    The advanced HVIGBT modules are equipped with IGBT elements featuring Mitsubishi Electric’s proprietary relaxed field of cathode (RFC) diode and carrier-stored trench-gate bipolar transistor (CSTBT) structure. Through the integration of new electric field relaxation and surface charge control mechanisms, the modules achieve a reduction of approximately 30% in chip termination region size. Moreover, the new devices deliver around 20 times greater moisture resistance compared to existing products, making them well-suited for high-humidity environments.

    In terms of performance improvements, the modules offer approximately 5% lower total switching loss relative to earlier models and demonstrate about 2.5 times higher reverse-recovery safe-operating area (RRSOA) tolerance. These enhancements collectively contribute to increased efficiency, greater reliability, and extended inverter life cycles in demanding industrial applications.

    Mitsubishi Electric plans to showcase the new HVIGBT modules at the 40th Nepcon Japan R&D and Manufacturing show in Tokyo from January 21 to 23, 2026, with additional exhibitions planned across North America, Europe, China, India, and other global regions.

    With these technological advancements, the company aims to support the broader adoption of environmentally responsible power solutions and contribute to global carbon neutrality goals.

    Original – Mitsubishi Electric

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  • Alpha and Omega Semiconductor Launches High SOA 100V MOSFET for AI Server 48V Hot Swap Applications

    Alpha and Omega Semiconductor Launches a High SOA 100V MOSFET for AI Server 48V Hot Swap Applications

    2 Min Read

    Alpha and Omega Semiconductor Limited has introduced the AOLV66935—a 100V High Safe Operating Area (SOA) MOSFET in a compact LFPAK 8×8 package. Engineered to meet the increasing power and reliability demands of 48V hot swap applications in AI servers, the device delivers low conduction losses, robust thermal performance, and space-saving benefits for advanced system architectures.

    The AOLV66935 is built on AOS’ proprietary 100V AlphaSGT™ MOSFET platform, which merges low on-resistance trench technology with enhanced SOA capability. The device has been rigorously tested and characterized at both 25°C and elevated operating conditions up to 125°C, ensuring stable and reliable performance in thermally demanding environments typical of AI servers.

    Designed for high-current switching, the LFPAK 8×8 package features gull-wing leads and advanced clip technology, achieving a 60% smaller footprint compared to the TO-263 (D2PAK) while maintaining high current handling. The package’s low thermal resistance and compatibility with automated optical inspection (AOI) processes make it well-suited for space-constrained, high-reliability server applications.

    Key performance metrics include a low RDS(on) of 1.86 milliohms (max) at Vgs = 10V, which minimizes conduction losses and reduces the number of devices needed in parallel—enabling more compact designs without compromising efficiency or thermal integrity.

    “To be able to perform the 48V hot swap in AI servers requires a MOSFET that excels in high current capability while providing exceptional high SOA robustness and reliability,” said Peter H. Wilson, Senior Director of the MOSFET Product Line at Alpha and Omega Semiconductor. “AOS designed the AOLV66935 High SOA MOSFET packaged in our advanced LFPAK 8×8 specifically to meet these demands. Plus, its exceptional low on-resistance significantly decreases conduction losses so fewer devices in parallel are required, allowing designers to meet space limitations.”

    Manufactured in IATF 16949-certified facilities, the AOLV66935 is optimized to support the next generation of AI infrastructure requiring high-efficiency power switching and thermal durability under harsh operating conditions.

    Original – Alpha and Omega Semiconductor

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  • Toshiba Introduces New 600V N-Channel Power MOSFET for High-Efficiency Power Supply Applications

    Toshiba Introduces New 600V N-Channel Power MOSFET for High-Efficiency Power Supply Applications

    1 Min Read

    Toshiba Electronic Devices & Storage Corporation has released the TK057V60Z1, a 600V N-channel silicon power MOSFET built using the DTMOSVI super junction process. The device is intended for use in power supply applications including data center servers, industrial switched-mode power supplies, and photovoltaic power conditioners.

    The TK057V60Z1 features a typical drain-source on-resistance (RDS(on)) of 0.047Ω, the lowest among Toshiba’s 600V MOSFETs in the DFN8×8 surface-mount package. Compared to the previous TK31V60X model, it offers approximately 40% lower RDS(on) and a 32% reduction in gate-drain charge (Qgd), contributing to lower conduction and switching losses while maintaining similar total gate charge (Qg).

    The compact DFN8×8 package supports higher power density designs. Toshiba provides SPICE models (G0 and G2) for circuit simulation, as well as an online simulator to assist in power circuit development.

    The new MOSFET is part of Toshiba’s ongoing DTMOSVI series expansion aimed at improving efficiency in industrial power systems.

    Original – Toshiba

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  • ROHM Releases 100V Power MOSFET RS7P200BM with Enhanced SOA for 48V AI Server Power Systems

    ROHM Releases 100V Power MOSFET RS7P200BM with Enhanced SOA for 48V AI Server Power Systems

    1 Min Read

    ROHM has introduced the RS7P200BM, a 100V N-channel power MOSFET in a compact DFN5060-8S (5.0mm × 6.0mm) package. Designed for hot-swap applications and battery protection in 48V systems, the device is suitable for AI server power circuits and industrial equipment requiring efficient power management.

    Key Specifications:

    • Drain-Source Voltage (VDS): 100 V
    • On-Resistance (RDS(on)): 4.0 mΩ (VGS = 10 V, ID = 50 A, Ta = 25°C)
    • Safe Operating Area (SOA):
      • 7.5 A @ 10 ms pulse width (VDS = 48 V)
      • 25 A @ 1 ms pulse width (VDS = 48 V)
    • Package: DFN5060-8S (5.0mm × 6.0mm)

    The RS7P200BM is engineered to handle inrush currents and transient overload conditions in 48V hot-swap environments. Its wide SOA and low RDS(on) provide thermal and electrical efficiency for compact, high-density server designs.

    Applications:

    • 48V hot-swap circuits in AI servers and data centers
    • Battery-powered industrial systems such as AGVs and forklifts
    • UPS and backup power systems
    • Robotics, fan motors, and power tools in 48V industrial domains

    This release supports the industry’s trend toward 48V systems, aiming to improve power density, energy efficiency, and thermal performance in power electronics.

    Original – ROHM

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  • Littelfuse Releases 200V, 480A Ultra-Junction Power MOSFET for High-Density Applications

    Littelfuse Releases 200V, 480A Ultra-Junction Power MOSFET for High-Density Applications

    1 Min Read

    Littelfuse has introduced the MMIX1T500N20X4, a 200V N-channel ultra-junction power MOSFET designed for high-current applications requiring low conduction losses and improved thermal performance.

    Key Specifications:

    • Blocking Voltage: 200 V
    • Drain Current (ID): 480 A
    • On-Resistance (RDS(on)): 1.99 mΩ
    • Gate Charge (Qg): 535 nC
    • Thermal Resistance (Rth(j-c)): 0.14 °C/W
    • Isolation Voltage: 2500 VRMS

    The device is housed in a ceramic-based, isolated SMPD-X package with topside cooling, which supports simplified thermal management and higher power density. Compared to other X4-Class MOSFETs, the MMIX1T500N20X4 offers significantly lower RDS(on) and higher current capability, allowing for consolidation of paralleled MOSFETs in system designs.

    Target Applications:

    • DC load switching
    • Battery energy storage systems
    • Industrial power supplies and process control
    • Charging infrastructure
    • Power electronics for drones and VTOL platforms

    This MOSFET is suitable for systems requiring compact, high-efficiency, and high-reliability solutions in medium-voltage ranges.

    Original – Littelfuse

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