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Magnachip Semiconductor announced two 650V Super Junction MOSFET products in a TO-Leadless (TOLL) package engineered for high-power, high-current consumer applications, including premium TVs, gaming monitors, AI laptop adaptors, and fast chargers.
Unlike Magnachip’s existing 80V–200V eXtreme Trench MOSFETs in 3-pin TOLL, the new 650V SJ MOSFETs adopt a 4-pin Kelvin configuration. By separating the gate-source return path, the design reduces parasitic inductance, helping to curb gate ringing, improve switching stability, and raise overall power efficiency—especially at higher dv/dt and di/dt.
Against conventional D2PAK packaging, the 4-pin TOLL format delivers more than a 100% increase in current capability, a 24% reduction in board footprint, and a 48% reduction in height. The result is a compact, thermally efficient package well suited to smaller PCBs and high-power-density products that demand strong heat dissipation.
The new devices are aimed at meeting the dual requirements of space savings and performance in slim form-factor systems. The company plans to broaden its 600V TOLL lineup to support next-generation platforms in AI datacenters and other high-power applications.
Original – Magnachip Semiconductor
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MCC introduced the MCTL1D0N08Y, an 80 V N-channel MOSFET in a compact TOLL-8L package engineered for high-current, fast-switching designs where thermal performance, efficiency, and footprint are critical. With a maximum RDS(on) of 1.0 mΩ at VGS = 10 V and a continuous drain current rating of 320 A, the device is aimed at reducing conduction losses in server-class SMPS, high-current DC-DC converters, industrial motor drives, and energy-storage inverters.
The MOSFET leverages a split-gate trench architecture and a low-parasitic package layout to enable fast, clean transitions that lower switching losses and mitigate EMI. Compared with legacy D2PAK solutions, the TOLL-8L format shortens current paths and improves thermal flow, supporting higher switching frequencies, smaller magnetics and heatsinks, and more compact, reliable assemblies.
Key specifications and design attributes
• Drain-source voltage (VDS): 80 V, providing transient headroom for telecom, data center, and industrial environments
• RDS(on): 1.0 mΩ max at VGS = 10 V for minimized conduction loss and higher efficiency
• Continuous drain current: 320 A for demanding high-current stages
• Package: TOLL-8L with low parasitics for improved switching behavior versus D2PAK
• Thermal performance: RθJA ≈ 40 °C/W; junction temperature Tj(max) = 175 °C for reliable operation at elevated ambient conditions
• Architecture: Split-gate trench design to balance ultra-low on-resistance with high switching speedBy combining very low on-resistance with a high-current, thermally capable package, the MCTL1D0N08Y is positioned to enhance uptime, reduce system losses, and shrink power stages across a wide range of industrial and infrastructure applications.
Original – Micro Commercial Components
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iDEAL Semiconductor has announced that its proprietary SuperQ™ technology has successfully achieved AEC-Q101 automotive qualification, marking the company’s entry into high-reliability and automotive-grade power semiconductor markets.
The company’s first automotive-qualified product, the iS20M028S1CQ, is a 200 V MOSFET featuring a low 25 mΩ RDS(on) and a maximum junction temperature rating of 175°C. The device is now entering mass production.
SuperQ technology represents a major innovation in silicon MOSFET performance, delivering significantly higher efficiency, lower switching losses, and improved conduction characteristics while retaining the proven robustness and reliability of silicon. This qualification confirms SuperQ’s ability to meet the demanding standards required for automotive applications, including electric vehicle powertrains, on-board chargers, and advanced driver-assistance systems (ADAS).
The iS20M028S1CQ extends iDEAL’s 200 V product family and is housed in a compact PDFN 5×6 mm package. The device offers up to 1.7 times better performance compared to competing solutions, combining high efficiency and low resistance with compatibility for high-volume, cost-efficient manufacturing.
“This is an important milestone that builds on the ruggedness and robustness of SuperQ, opening new markets for iDEAL,” said Mark Granahan, CEO and Founder of iDEAL Semiconductor. “Automotive qualification validates our technology’s potential to drive efficiency in electrified transportation and beyond, empowering customers with more sustainable, more reliable power solutions.”
With this achievement, iDEAL strengthens its position in the power semiconductor industry, bringing advanced silicon-based innovation to applications that demand high efficiency, reliability, and performance under extreme conditions.
Original – iDEAL Semiconductor
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Micro Commercial Components (MCC) has introduced its new 1200V Trench Field Stop (TFS) IGBT series, designed to deliver high efficiency, durability, and flexibility for demanding power switching applications in both industrial and automotive sectors.
The new IGBT family is housed in the proven TO-247AB package and available in current ratings from 40A to 80A. These devices feature low conduction and switching losses, smooth high-speed transitions, and integrated soft-recovery anti-parallel diodes to ensure low electromagnetic interference and simplified filter design.
Automotive-grade versions of the TFS IGBTs are AEC-Q101 qualified and rated for a maximum junction temperature of 150°C, while industrial variants can operate up to 175°C for extended thermal performance and longer service life. The series is well suited for motor drives, uninterruptible power supplies (UPS), electric vehicle traction and auxiliary systems, and high-power converters that require both efficiency and rugged reliability.
The trench field-stop design provides several key advantages, including:
- Low forward voltage and reduced switching losses, improving overall efficiency and minimizing heat generation
- Integrated fast, soft-recovery diodes for lower EMI and simplified circuit design
- 1200V breakdown voltage with a positive temperature coefficient, ensuring stable current sharing and robust short-circuit protection
Key Features and Benefits
- TO-247AB package for standard compatibility and easy thermal management
- 1200V breakdown voltage for ample design margin
- Wide current range from 40A to 80A
- Fast and smooth switching performance for both hard- and soft-switching topologies
- Low conduction and switching losses for improved system efficiency
- Integrated soft-recovery anti-parallel diode
- Positive temperature coefficient for stable parallel operation
- Automotive-grade options qualified to AEC-Q101 (TJ max = 150°C)
- Industrial-grade variants rated up to TJ max = 175°C
- High short-circuit endurance and avalanche ruggedness
- Suitable for high-frequency operation with reduced EMI
MCC’s 1200V TFS IGBT series provides engineers with a reliable, efficient, and cost-effective solution for next-generation industrial drives, EV power systems, and high-performance power conversion designs.
Original – Micro Commercial Components
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GlobalWafers Co., Ltd. has officially inaugurated FAB300, its new 300mm semiconductor wafer manufacturing plant at MEMC Electronic Materials S.p.A. in Novara, Italy. The company describes FAB300 as one of Europe’s most advanced and fully integrated 300mm silicon wafer facilities.
The inauguration ceremony was attended by Italy’s Minister of Enterprises and Made in Italy, Adolfo Urso, Senator Gaetano Nastri, Member of the European Parliament Isabella Tovaglieri, Novara Mayor Alessandro Canelli, and Vincent Y.C. Tsai from the Taipei Representative Office in Italy. Representatives from the Piedmont Region, along with customers, suppliers, and partners, also joined the event, marking a major milestone for the European semiconductor industry.
GlobalWafers Chairperson Doris Hsu emphasized that FAB300 represents more than just a production site. She described it as a symbol of innovation, sustainability, and shared growth, reflecting the skill and dedication of the company’s Italian team. According to Hsu, the new facility will enable closer collaboration with customers to co-develop advanced technologies and support Europe’s growing semiconductor ecosystem.
The Novara site has produced silicon wafers since 1976. In February 2022, GlobalWafers announced a €450 million expansion to add this new 300mm fabrication module, reinforcing its long-term commitment to Europe. FAB300 has received €103 million in R&D funding through the Important Project of Common European Interest on Microelectronics and Communication Technologies (IPCEI-ME/CT), a joint initiative between the Italian government and the European Union to strengthen the continent’s semiconductor capabilities.
Senator Gaetano Nastri highlighted that the project marks a crucial step for Italy and Europe, calling investments in the semiconductor supply chain “investments in the future.” Member of the European Parliament Isabella Tovaglieri added that FAB300 strengthens Italy’s position as an innovation leader and contributes to Europe’s technological independence.
The new facility was developed in partnership with major European microelectronics companies to ensure alignment with customer requirements and strategic priorities. STMicroelectronics praised GlobalWafers’ decision to invest in Novara, noting the site’s proximity to its own operations and its contribution to supply chain resilience.
Despite global economic challenges, GlobalWafers has remained committed to its European operations. The completion of FAB300 adds significant new manufacturing capacity and will create up to 150 high-skilled jobs. Novara Mayor Alessandro Canelli noted that the investment reinforces the city’s industrial heritage and demonstrates how innovation can drive both growth and employment.
Working in synergy with its Merano crystal growth facility, GlobalWafers now operates one of Europe’s few fully integrated 300mm silicon wafer value chains, spanning from crystal growth to finished wafers. Once fully ramped, FAB300 will produce 300mm polished and epitaxial wafers for advanced logic, memory, power, and sensor applications. The site will run entirely on renewable energy under the RE100 standard, with a focus on water recycling and sustainable manufacturing practices.
Marco Sciamanna, President of MEMC Electronic Materials S.p.A., said FAB300 represents the result of vision, competence, and strong collaboration among GlobalWafers’ teams, institutions, and partners. He noted that the site will serve as both a cutting-edge semiconductor facility and a model of sustainable growth for the future.
Minister Adolfo Urso stated that the inauguration confirms Italy’s growing leadership in the semiconductor sector and its contribution to Europe’s drive for technological sovereignty. He emphasized the importance of collaboration between industry, education, and research to strengthen competitiveness and prepare for future challenges.
The FAB300 project involved hundreds of suppliers, equipment manufacturers, and engineering firms, strengthening the entire Piedmont region’s position in the global semiconductor value chain. GlobalWafers also continues to collaborate with universities and research institutions to develop talent and foster innovation.
The opening of FAB300 follows the launch of GlobalWafers America in Sherman, Texas, earlier in 2025. Together, these facilities demonstrate the company’s commitment to geographic diversification and global cooperation with governments and customers.
Chairperson Hsu concluded that Novara now stands at the center of GlobalWafers’ European innovation strategy. She said FAB300 enhances Europe’s role in the global semiconductor landscape and exemplifies the company’s integrated, regionally anchored manufacturing approach. Through its advanced facilities across Asia, Europe, and the United States, GlobalWafers aims to provide a reliable, sustainable, and globally coordinated supply of 300mm silicon wafers for the technologies that will define the future.
Original – GlobalWafers
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Infineon Technologies has announced its support for NVIDIA’s 800 VDC power architecture, introduced at Computex 2025, marking a major step toward creating more efficient, scalable, and serviceable AI data centers. As the power demands of artificial intelligence infrastructure continue to grow exponentially, the move from traditional 54 V systems to centralized 800 VDC architectures is becoming essential to improve energy efficiency, reduce losses, and increase overall system reliability.
Adam White, Division President of Power & Sensor Systems at Infineon Technologies, emphasized the company’s role in shaping this transformation. “There is no AI without power,” he stated. “We are working with NVIDIA on intelligent power systems that not only meet the demands of future AI data centers but also minimize system downtimes. By driving the shift to high-density, reliable, and safe 800 VDC architectures, we are redefining how power is delivered to AI infrastructure and maximizing the value of every watt.”
Infineon’s collaboration with NVIDIA focuses on ensuring both safety and serviceability in 800 VDC-powered systems. One key innovation is the integration of hot-swap controller functionality, which enables server boards to be safely replaced or maintained while the rest of the rack continues operating. This solution, based on Infineon’s CoolSiC™ JFET technology, allows controlled pre-charging and discharging of server boards, preventing electrical hazards and eliminating costly downtime.
As AI data center power requirements rise — with rack power expected to reach 500 kilowatts and potentially 1 megawatt by the end of the decade — Infineon is developing next-generation power conversion systems that combine its Intermediate Bus Converter (IBC) and high-frequency gallium nitride (GaN) switching technologies. These solutions support efficient two- and three-stage power conversion from the grid to the server core, achieving up to 98 percent efficiency per conversion stage.
The company’s holistic approach extends beyond power conversion to include protection and control components that enhance reliability and sustainability. By leveraging silicon carbide (SiC), GaN, and silicon technologies, Infineon provides a complete portfolio of semiconductor solutions to enable safe and efficient megawatt-scale AI server racks.
Infineon’s experts will further discuss power conversion solutions for future server boards operating directly from high-voltage DC at the OCP Global Summit 2025 and explore advancements in AI data center power systems at OktoberTech Silicon Valley 2025.
With these developments, Infineon continues to position itself at the forefront of the semiconductor industry’s drive toward powering the AI revolution with smarter, more sustainable, and higher-performance energy systems.
Original – Infineon Technologies
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STMicroelectronics has revealed a complete prototype of its new power delivery system designed to support NVIDIA’s 800 VDC architecture for next-generation AI data centers. The company’s announcement underscores its leadership in developing semiconductor technologies that meet the rising power and efficiency demands of large-scale AI computing infrastructure.
As AI workloads grow rapidly, traditional 54 V power distribution systems are reaching their limits. The shift to 800 VDC architectures enables megawatt-scale compute racks that are more efficient, require less copper, and simplify overall system design. STMicroelectronics is contributing to this transition with a portfolio that integrates silicon carbide (SiC), gallium nitride (GaN), and silicon technologies optimized for high-voltage, high-efficiency applications.
At the OCP Global Summit 2025, ST presented a major development milestone: a compact 12 kW GaN-based LLC power delivery board roughly the size of a smartphone. Operating from an 800 V input and switching at 1 MHz, the prototype achieved more than 98 percent efficiency and a record power density of over 2,600 W/in³ at 50 V output.
The new system addresses key design challenges in power density, thermal management, efficiency, and reliability—critical factors for deploying megawatt-scale AI compute systems while lowering infrastructure complexity and cost.
STMicroelectronics’ achievement represents a significant step forward in enabling high-performance, energy-efficient power delivery solutions for the emerging generation of hyperscale AI data centers built on 800 VDC architectures.
Original – STMicroelectronics
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Nexperia introduced the latest additions to its ever-expanding portfolio of application-specific MOSFETs (ASFETs), whose features have been tuned to meet the exacting requirements of specific end applications. The 80 V PSMN1R9-80SSJ and 100 V PSMN2R3-100SSJ switches have been designed to provide enhanced dynamic current sharing in high-power 48 V applications that require the use of several closely matched MOSFETs connected in parallel. These include motor drive in electric vehicles like forklifts, e-scooters and mobility devices, as well as high-power industrial motors.
When connecting two or more MOSFETs in parallel to support high current capability and reduce conduction losses, it can be challenging for designers to ensure the load current is shared equally between individual devices during turn-on and turn-off. MOSFETs with the lowest VGS(th) will turn on first, causing higher thermal stress resulting in accelerated failure. In order to provide a sufficient safety margin, engineers often over-specify the MOSFETs used in their end applications.
This expensive and time-consuming approach often requires additional testing but still cannot provide guarantees on how devices will behave at higher load currents (tens of Amps). An alternative approach is to request tightly matched devices from a supplier, but this can further raise the cost of an end application.
The features of Nexperia’s PSMN1R9-80SSJ and PSMN2R3-100SSJ ASFETs eliminate the need for designers to adopt either of these approaches by providing enhanced dynamic current sharing. These switches offer a 50% lower current delta between parallel devices (for currents up to 50 A per device) at turn-on/off and also offer a VGS(th) window that is up to 50% lower (0.6 V min-to-max). This benefit, combined with the low RDS(on) of 1.9 mΩ or 2.3 mΩ helps to provide high efficiency in power switching applications.
The new ASFET devices are available in the rugged, space-efficient 8 mm x 8 mm copper-clip LFPAK88 package, delivering operating temperature ranging from -55 °C to +175 °C.
Original – Nexperia
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The rapid growth of power-hungry applications across various industries is placing unprecedented demands on power electronics in terms of power density, efficiency and reliability. Discrete power MOSFETs play a pivotal role in that context. An application-optimized approach opens new possibilities to further improve already highly advanced MOSFET technologies.
Leveraging this use-case centric approach, Infineon Technologies AG has launched the OptiMOS™ 7 power MOSFET family for industrial and consumer markets, extending the already existing OptiMOS 7 automotive portfolio. Designed to provide the best fitting solution in their respective use case, the new OptiMOS 7 family offers products specifically for high performance switching, motor-drives, or RDS(ON)-focused applications.
OptiMOS 7 25 V: Optimized for Switching Applications
The OptiMOS 7 25 V MOSFETs go beyond the one-size-fits-all approach, offering devices tailored to switching applications. The product variant targets applications such as intermediate bus converters (IBCs) with various topologies used in 48 V conversion for power AI cores, as well as switched-mode power supplies (SMPS) in telecommunications and traditional server applications. The portfolio includes two technology variants: devices optimized for hard-switching and soft-switching topologies. The hard-switching optimized devices feature an excellent Miller ratio, FOMs, and RDS(ON)10, while the soft-switching optimized products deliver ultra-low RDS(ON)45 and FOMQg. Compared to the OptiMOS™ 5 25 V, the new generation achieves up to 20 percent lower RDS(ON) and up to 25 percent better FOMs, depending on the optimization type.
OptiMOS 7 40 V: Optimized for Motor Drives
The OptiMOS 7 40 V MOSFETs, designed for motor-drive applications, deliver lower RDS(on), optimized gate characteristics, enhanced noise immunity, and a threefold wider safe operating area (SOA) compared to the previous generation. Their lower transconductance improves current distribution, reducing voltage overshoot, and boosts performance under harsh operating conditions. These devices are ideal for motor drives, power tools, and gardening applications, offering maximum reliability, efficiency, and power density.
Original – Infineon Technologies
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Toshiba Electronic Devices & Storage Corporation has launched “TPH2R70AR5,” a 100V N-channel power MOSFET fabricated with U-MOS11-H, Toshiba’s latest-generation process. The MOSFET targets applications such as switched-mode power supplies for industrial equipment used in data centers and communications base stations.
The 100V U-MOS11-H series improves on the drain-source On-resistance (RDS(ON)), total gate charge (Qg) and the trade-off between them (RDS(ON)×Qg) delivered by Toshiba’s existing generation process, the U-MOSX-H series, reducing both conduction and switching power losses.
TPH2R70AR5 offers approximately 8% lower RDS(ON) and 37% lower Qg against TPH3R10AQM, a U-MOSX-H series product, plus a 42% improvement in RDS(ON)×Qg. It also achieves high-speed body diode performance through the application of lifetime control technology, which reduces reverse recovery charge (Qrr) and suppresses spike voltage.
Qrr is improved by approximately 38% and the RDS(ON)×Qrr is also improved by approximately 43%. These industry-leading trade-off characteristics, both RDS(ON)×Qg and RDS(ON)×Qrr, minimize power loss, contributing to higher efficiency and power density in power supply systems. It also adopts the SOP Advance(N) package and offers excellent mounting compatibility with industry standards.
Toshiba also offers circuit design support tools: the G0 SPICE model, which verifies circuit function in a short time; and highly accurate G2 SPICE model that accurately reproduces transient characteristics. All are now available.
Toshiba will continue to expand its lineup of low-loss MOSFETs that enable more efficient power supplies and contribute to lower equipment power consumption.
Original – Toshiba
