-
Micro Commercial Components has launched the MCTLD58N04Y, a 40 V N-channel MOSFET engineered for high-current power applications such as motor drivers, power tools, and industrial power systems.
The device features an ultra-low RDS(on) of 0.58 mΩ and supports a high continuous drain current of up to 639 A (depending on thermal conditions), enabling efficient conduction and stable operation under heavy load. This combination is particularly valuable in low-voltage, high-current designs where minimizing conduction losses is critical.
Built on split-gate trench MOSFET technology, the MCTLD58N04Y delivers low switching losses and improved efficiency, supporting compact system designs where thermal management and board space are key constraints. The MOSFET also offers strong avalanche ruggedness, making it suitable for handling transient and inductive load conditions commonly found in motor drive and industrial environments.
The device is housed in a thermally efficient TOLL-8L package, which provides low thermal resistance and effective heat dissipation, supporting reliable operation in demanding applications.
From a market perspective, this product aligns with the growing demand for high-current, low-voltage MOSFETs in electrified systems, including battery-powered tools, industrial automation, and emerging 48 V architectures. While wide-bandgap technologies dominate higher voltage segments, advanced silicon MOSFETs like this remain essential for optimizing efficiency and cost in low-voltage, high-current stages.
MCC’s latest release reinforces its focus on delivering high-performance silicon solutions for mainstream power applications where scalability, robustness, and cost-effectiveness are key decision factors.
Original – Micro Commercial Components
-
onsemi has secured a major design win with Sineng Electric, supplying its latest-generation hybrid power integrated modules (PIMs) for next-generation renewable energy platforms, including 430 kW liquid-cooled energy storage systems (ESS) and 320 kW utility-scale solar string inverters.
The hybrid PIM integrates onsemi’s FS7 insulated-gate bipolar transistor (IGBT) technology with EliteSiC silicon carbide diodes in a high-density F5BP package. This combination delivers measurable performance gains, including up to 0.1% higher efficiency, 10% lower switching losses, and up to 8% lower power dissipation compared to previous generations.
At the system level, these improvements translate into significant benefits for Sineng’s platforms. In solar inverter applications, benchmarking showed a 0.07% efficiency increase and a reduction of 225 W in power losses for a 320 kW system. For energy storage systems, the modules enable up to 0.75% improvement in round-trip efficiency, a 5% reduction in auxiliary power consumption, and higher overall power density.
The advanced module design also reduces thermal resistance and stray inductance through optimized packaging and direct bonded copper (DBC) substrates, enabling cooler operation and improved long-term reliability under high-load conditions.
From a market perspective, this design win highlights the continued relevance of hybrid IGBT + SiC module architectures in utility-scale applications, where cost-performance optimization remains critical. While full-SiC solutions are gaining traction, hybrid modules offer a balanced approach—delivering efficiency gains without significantly increasing system cost.
Strategically, this collaboration strengthens onsemi’s position in the fast-growing renewable energy and grid infrastructure markets, where demand is being driven by large-scale solar deployment, energy storage expansion, and the increasing power requirements of AI-driven data centers.
Original – onsemi
-
Magnachip Semiconductor Corporation has introduced its 8th-generation 40 V and 60 V medium-voltage (MV) MOSFETs, aimed at improving efficiency and power density in server and high-performance computing (HPC) power supply units.
The new devices are optimized for synchronous rectification (SR) stages, a critical part of modern server power architectures. Leveraging advanced split-gate trench (SGT) technology, the 40 V variants deliver up to 40% higher current density and approximately 25% faster switching speeds compared to the previous generation, while the 60 V versions achieve up to 50% higher current density and 60% faster switching.
Additional enhancements include fast anti-parallel diode technology to improve switching stability and reduce residual current effects. The MOSFETs support operation up to 175°C and are packaged in compact PDFN56 formats, enabling high-density designs required in AI servers and HPC systems.
Magnachip is expanding its portfolio with multiple RDS(on) options, including 0.8 mΩ and 1.0 mΩ (40 V) and 1.05 mΩ (60 V), following the earlier release of a 0.7 mΩ device. This broader lineup allows designers to optimize trade-offs between efficiency, thermal performance, and cost.
From a market perspective, this launch directly targets the fast-growing server power supply segment, driven by AI and data center expansion. Industry projections indicate steady growth in this market, reinforcing demand for high-efficiency, low-voltage power semiconductors.
Strategically, Magnachip is strengthening its position in the competitive low- to mid-voltage MOSFET space, where silicon technologies continue to dominate critical power stages despite the rise of GaN and SiC. By focusing on performance improvements in synchronous rectification, the company is addressing a key bottleneck in power conversion efficiency for next-generation computing infrastructure.
Original – Magnachip Semiconductor
-
Toshiba Electronic Devices & Storage Corporation has introduced the TK058V60Z5, a new 600V N-channel power MOSFET in its DTMOSVI High-Speed Diode (HSD) series, targeting high-efficiency switched-mode power supplies for industrial applications such as data center servers and photovoltaic inverters.
The new device delivers a typical drain-source on-resistance of 0.050Ω, the lowest within Toshiba’s 600V MOSFET portfolio featuring integrated fast-recovery diodes in a DFN8×8 package. With this addition, the DTMOSVI 600V HSD lineup expands to seven products, enhancing design flexibility for power engineers.
A key differentiator is the integration of lifetime control technology to significantly improve body diode performance. Compared to previous generations without fast-recovery diodes, the new series achieves approximately 60% reduction in reverse recovery time (trr) and around 85% lower reverse recovery charge (Qrr), directly translating into lower switching losses in bridge and inverter topologies.
Further process and gate design optimizations reduce key figures of merit, including RDS(on)×Qg by about 36% and RDS(on)×Qgd by roughly 52% versus earlier DTMOSIV-H devices. These improvements contribute to lower conduction, switching, and gate drive losses, supporting higher overall system efficiency.
From a market perspective, this launch reinforces Toshiba’s positioning in the silicon super-junction MOSFET segment, which remains highly relevant in cost-sensitive industrial and energy applications despite increasing adoption of SiC and GaN. Enhanced diode performance is particularly critical in hard-switching topologies common in server power supplies and renewable energy systems.
Toshiba also supports adoption with simulation tools, including G0 and high-accuracy G2 SPICE models, as well as an online circuit simulator, helping engineers accelerate design cycles and optimize power conversion performance.
Original – Toshiba
-
Alpha and Omega Semiconductor announced the release of the AONC40202 (25 V) and AONC68816 (80 V) MOSFETs, designed to support high power density intermediate bus converter (IBC) DC-DC applications in AI servers and data centers.
Both devices are housed in advanced DFN 3.3 × 3.3 mm double-sided cooling, source-down packages, enabling superior thermal performance to meet the stringent requirements of AI infrastructure. The design incorporates an optimized top-clip structure for the exposed drain, allowing efficient heat removal through both the top and bottom of the package. This double-sided cooling approach significantly reduces thermal resistance and improves heat dissipation compared to conventional single-sided cooling solutions.
The MOSFETs achieve a maximum top-side thermal resistance of 0.9 °C/W, supporting improved thermal management and higher system efficiency. The AONC40202 delivers a continuous drain current of up to 405 A and supports operation up to a junction temperature of 175 °C, enabling high current handling and increased power density in compact designs.
In addition, the source-down configuration provides a larger source contact area to the PCB, improving electrical and thermal performance, while the center-gate pin layout simplifies PCB routing and minimizes gate driver connection complexity.
Both devices are built using AOS’ AlphaSGT silicon technology, combining enhanced electrical performance with improved manufacturability and reliability for high-performance computing applications.
Original – Alpha and Omega Semiconductor
-
Micro Commercial Components (MCC) has introduced a new family of trench field-stop IGBTs designed to support high-efficiency power conversion in industrial and energy applications.
The new devices are available with voltage ratings of 650 V and 1200 V and are engineered to deliver low switching losses, fast switching performance, and reliable operation under demanding electrical and thermal conditions. The IGBTs use an advanced trench and field-stop structure that improves efficiency while reducing conduction and switching losses in power conversion systems.
The devices offer high current capability with continuous current ratings of up to 40 A and pulsed current capability reaching 80 A depending on the model. A low collector-emitter saturation voltage of approximately 1.95 V helps reduce conduction losses and improve overall system efficiency.
The 1200 V variant integrates a fast and soft-recovery anti-parallel diode, enabling improved performance in both hard-switching and soft-switching converter topologies. A positive temperature coefficient supports better current sharing in parallel device configurations while improving thermal stability.
The IGBTs are rated for maximum junction temperatures up to 175 °C and are packaged in the TO-247AB power package, which provides robust mechanical strength and effective heat dissipation for high-power applications.
The initial devices in the series include the MIW40N65AH2Y and MIW40N120AH2Y models, targeting applications such as industrial motor drives, power supplies, and energy conversion systems requiring high efficiency and reliable high-temperature operation.
Original – Micro Commercial Components
-
iDEAL Semiconductor announced an expansion of its SuperQ 200 V MOSFET portfolio, introducing new devices that deliver industry-leading on-resistance in widely used power semiconductor packages.
The iS20M5R5S1T sets a new benchmark as the lowest RDS(on) 200 V MOSFET available in the industry-standard TOLL package, while the newly introduced iS20M6R3S1P offers the lowest RDS(on) for a 200 V MOSFET in the TO-220 package. Together, these devices provide high efficiency and design flexibility for both surface-mount and through-hole power electronics applications.
The iS20M5R5S1T achieves a maximum RDS(on) of 5.5 mΩ in a compact TOLL package, enabling higher power density and reduced conduction losses in space-constrained designs. The complementary iS20M6R3S1P provides a maximum RDS(on) of 6.3 mΩ in the TO-220 package, supporting applications that require through-hole assembly, mechanical mounting, or direct heatsinking.
iDEAL Semiconductor plans to further expand its 200 V SuperQ MOSFET lineup later in 2026 by introducing the same 5.5 mΩ performance level in additional packages, including a D2PAK-7L variant optimized for high-current surface-mount designs and a TOLT package designed for compact layouts with top-side cooling capabilities.
The SuperQ 200 V MOSFET devices are primarily targeted at demanding motor-drive applications where efficiency, robustness, and fault tolerance are critical. Key characteristics include high short-circuit withstand capability, improved device paralleling with ±0.5 V gate threshold voltage tolerance, a maximum operating temperature rating of 175 °C, and current handling capability up to 151 A in the TOLL package and 172 A in the TO-220 package. The devices are also avalanche-rated and undergo 100% unclamped inductive switching testing in production.
Beyond motor drives, the MOSFETs can be used in switched-mode power supplies, secondary-side synchronous rectification circuits, and other high-current industrial or battery-powered systems where efficiency and thermal performance are important.
The iS20M5R5S1T and iS20M6R3S1P devices are currently in volume production and available through the company’s global distribution network. Additional devices in the series are currently sampling and are expected to enter production later in 2026.
Original – iDEAL Semiconductor
-
Micro Commercial Components (MCC) expanded its power MOSFET lineup with the MCG052P10Y and MCAC054P10Y, two 100 V P-channel MOSFETs designed for high-current high-side switching in space-constrained power designs. The devices target common pain points in higher-voltage systems, including conduction losses, gate-drive complexity and thermal limits that can undermine efficiency and long-term reliability.
The MCG052P10Y is offered in a compact DFN3333 package, while the MCAC054P10Y comes in the higher-power DFN5060 footprint. Built on split gate trench MOSFET technology, both parts combine low RDS(on), strong current handling and low thermal resistance to reduce losses, limit switching stress and move heat efficiently into the PCB. With a 100 V drain-source rating, they are positioned as space-efficient building blocks for demanding power applications that require robust high-side switching.
Key features and benefits:
- Low RDS(on): 52 mΩ (max) for MCG052P10Y-TP and 54 mΩ (max) for MCAC054P10Y-TP at VGS = 10 V, reducing conduction losses
- Split Gate Trench MOSFET Technology optimized for low switching losses and high efficiency in high-side switching
- High current capability: 16 A continuous drain current (DFN3333) and up to 25 A (DFN5060)
- Low Thermal Resistance: Junction‑to‑case thermal resistance of 5°C/W (DFN3333) and 1.86°C/W (DFN5060) enables efficient heat dissipation through the PCB
- 100 V VDS rating suitable for higher-voltage power designs
Original – Micro Commercial Components
-
Alpha and Omega Semiconductor Limited (AOS) introduced its αMOS E2™ 600 V Super Junction MOSFET platform and the first device from the family, the AOTL037V60DE2. Targeted at servers, workstations, telecom rectifiers, solar inverters, motor drives and industrial power systems, the platform addresses the core requirements of modern mid- to high-power SMPS and inverter designs: higher efficiency, greater power density, lower system cost and robust operation.
Engineered with a robust intrinsic body diode, αMOS E2™ reliably handles hard-commutation events—such as body-diode reverse recovery during short-circuits or start-up transients—to enhance system resilience. The AOTL037V60DE2, offered in a TOLL package, features a maximum RDS(on) of 37 mΩ. AOS application evaluations demonstrated body-diode ruggedness withstanding di/dt of 1300 A/µs under specified forward-current conditions at a junction temperature of 150 °C. Testing also confirmed superior Avalanche Unclamped Inductive Switching (UIS) capability and longer Short-Circuit Withstanding Time (SCWT) versus competing MOSFETs, translating into stronger system-level reliability under abnormal operating scenarios.
The platform is optimized for critical high-voltage topologies, including the slow leg of totem-pole PFC, LLC resonant converters, PSFB and cyclo-converters, helping designers meet stringent efficiency and power-density targets while maintaining robustness.
Technical highlights
• Optimized for soft-switching topologies with exceptionally low switching losses
• Rugged body diode with reduced Qrr for demanding, high-stress applications
• Enhanced robustness with strong UIS, inrush handling and wide SOA
• Designed to prevent self-turn-on for reliable operation under dynamic conditions
• Suitable for Totem Pole PFC, LLC, PSFB and CrCM H-4/Cyclo Inverter applicationsOriginal – Alpha and Omega Semiconductor
-
CISSOID announced the CMT-PLA1BL12300MA, a 1200 V / 300 A half-bridge IGBT power module that pairs advanced switching technology with a widely adopted industry-standard CPAK-EDC package. The new module targets reliable, cost-effective upgrades in industrial power conversion, offering drop-in compatibility, enhanced mechanical robustness and greater design flexibility.
Engineered for high-frequency, high-performance systems—including UPS, motor and motion control, and industrial power supplies—the module leverages Trench Gate Field Stop (TG-FS) IGBT technology to balance switching speed and conduction losses while maintaining excellent short-circuit behavior. A high-surge freewheeling diode supports transient and overload events, and market-leading thermal conductance helps move heat quickly to boost power density and extend lifetime margins.
Key benefits:
- High efficiency with low saturation voltage and optimized switching to minimize dissipation
- Robust performance with continuous current capability up to 450 A and extended temperature margins
- Seamless integration via the CPAK-EDC industry-standard package for drop-in upgrades
- Reduced EMI from a fast, soft-recovery integrated diode, simplifying system design
Key technical features:
- Configuration: 1200 V / 300 A half-bridge IGBT power module
- Continuous DC current: 450 A (@ Tj = 90 °C)
- Low VCE(sat): 1.56 V (@ IC = 300 A, Tj = 25 °C); 1.78 V (@ IC = 300 A, Tj = 150 °C)
- Switching losses: Eon = 34 mJ, Eoff = 34.5 mJ (@ Tj = 150 °C)
- Thermal resistance: RθJC = 0.065 °C/W (IGBT); 0.1 °C/W (diode)
With this addition, CISSOID broadens its catalog of standard modules, giving designers proven building blocks to accelerate innovation in electric drives and industrial power conversion.
Original – CISSOID
