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Magnachip Semiconductor has expanded its power semiconductor portfolio with 15 sixth-generation E6 super-junction MOSFETs targeting consumer, computing and industrial power applications below 1kW.
The E6 Series includes devices rated at 500V and 600V and is designed to balance switching losses, thermal performance and electromagnetic interference in compact power conversion systems. The MOSFETs also provide operating margin for voltage transients and avalanche conditions.
Magnachip evaluated a 600V, 280mΩ E6 MOSFET in a TO-220SFA package in the power factor correction stage of a television switch-mode power supply. At a 100VAC input and under identical test conditions, the device operated at approximately 5.3% lower temperature than Magnachip’s previous-generation MOSFET.
The 600V portfolio is available in DPAK (TO-252), TO-220FA and TO-220SFA packages across multiple on-resistance classes. The package and RDS(on) options are intended to accommodate different PCB mounting, thermal and system power requirements.
The devices target power factor correction and other power conversion functions in television switch-mode power supplies, notebook adapters, PC power supplies and other consumer and industrial power systems.
Magnachip said all 15 E6 super-junction MOSFETs are now in mass production.
Original – Magnachip Semiconductor
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Vishay Intertechnology has introduced four 650V superjunction MOSFET power modules in the industry-standard SOT-227 package for industrial power conversion applications. The new devices are the VS-FC50SA65, VS-FC100SA65, VS-FC150SA65 and VS-FC50LA65.
Three of the modules use a single-switch configuration with nominal current ratings of 50A, 100A and 150A. The fourth, the 50A VS-FC50LA65, uses a low-side chopper configuration and integrates a 650V silicon carbide diode.
The VS-FC50SA65 has a typical RDS(on) of 44mΩ and total gate charge of 167nC, while the 100A VS-FC100SA65 provides 22mΩ and 338nC. The 150A VS-FC150SA65 reduces typical RDS(on) to 14.8mΩ with a gate charge of 508nC. The low-side chopper VS-FC50LA65 provides 45mΩ RDS(on) and 167nC gate charge.
All four devices use Vishay’s 650V superjunction MOSFET technology and are designed to balance conduction and switching losses in DC/DC converters and DC/AC inverters.
Target applications include solar inverters, hydrogen generation and fuel-cell systems, HVDC infrastructure, charging stations, switch-mode power supplies, welding and cutting equipment, UPS systems, lighting, rail power supplies and medical imaging equipment including X-ray and MRI systems.
The modules operate across a temperature range of -55°C to +150°C. Their standard SOT-227 package also allows them to serve as drop-in replacements in compatible existing designs without requiring PCB redesign.
Samples and production quantities of all four devices are available now, with Vishay specifying lead times of 12 weeks.
Original – Vishay Intertechnology
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Taiwan Semiconductor has expanded its TQM Series with two 60V dual N-channel power MOSFETs targeting automotive and other high-reliability power applications. The devices are supplied in a low-profile 5mm x 6mm PDFN56UD package and are designed to provide pin compatibility with several commonly used power semiconductor packages.
The new TQM130NH06DCR and TQM130NH06LDCR are both rated at 60V with a continuous drain current of 40A and RDS(on) of 13mΩ. The TQM130NH06DCR has a total gate charge of 16.2nC, while the TQM130NH06LDCR reduces gate charge to 8.1nC.
The PDFN56UD package incorporates heat-spreader contacts to support thermal management and higher power density. Its dual-MOSFET configuration integrates two devices within a single package, reducing PCB area and potentially lowering component count and bill-of-materials requirements.
The devices also feature wettable flanks for automated optical inspection of solder joints and automated PCB assembly. They are manufactured to meet AEC-Q automotive requirements, with production part approval process documentation available.
Target applications include H-bridge and half-bridge circuits, motor and actuator controls, and solenoid drivers. Taiwan Semiconductor said the PDFN56UD footprint can also serve as a drop-in alternative to DFN8, LFPAK56 and PowerFLAT package formats.
Original – Taiwan Semiconductor
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ROHM has introduced the RS4P063BPHZG, a 100V N-channel MOSFET designed for automotive safety functions and protection circuits that can experience short-duration, high-power loads.
The device provides a wide safe operating area (SOA) across a broad voltage range and is housed in the standard HPLF5060 package. According to ROHM, the RS4P063BPHZG delivers approximately five times the SOA tolerance of conventional equivalent-sized products under conditions of VDS = 100V and a 100µs pulse width.
ROHM achieved the increased SOA capability through a device design that suppresses secondary breakdown during high-power operation. The MOSFET is intended for applications including airbag inflator ignition circuits and seatbelt pretensioner drive circuits, where devices can be subjected to momentary high-current and high-voltage conditions.
The HPLF5060 package uses the widely adopted 5.0mm × 6.0mm footprint, allowing the MOSFET to be evaluated as a replacement in existing automotive layouts while limiting the need for PCB design changes.
The RS4P063BPHZG extends ROHM’s Wide-SOA MOSFET technology into automotive applications. The company has previously developed Wide-SOA devices for applications including AI servers and industrial power supplies.
Mass production of the RS4P063BPHZG began in June 2026. ROHM lists a sample price of $4.00 per unit, excluding tax, and is providing design models and development tools to support circuit evaluation.
ROHM is also developing automotive Wide-SOA MOSFETs in larger HPLF8080, measuring 8.0mm × 8.0mm, and TOLG packages, measuring 9.9mm × 11.7mm, as it expands its portfolio for automotive safety and protection circuits.
Original – ROHM
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MCC has introduced the MDTK072N60H, a 600V N-channel power MOSFET designed for high-voltage power conversion in industrial and infrastructure applications.
The device uses Super Junction MOSFET technology and provides a maximum RDS(on) of 72mΩ. It supports a continuous drain current of up to 24A, targeting applications where conduction losses and current-handling capability are important design considerations.
The MDTK072N60H has a total gate charge of 70nC, supporting switching-performance optimization in high-voltage power conversion circuits. MCC designed the device to reduce both conduction and switching losses in applications such as AC/DC power supplies and industrial converters.
Thermal performance is supported by a junction-to-case thermal resistance of 1.1°C/W. The MOSFET is housed in a compact TOLL-8L-KS surface-mount package designed to provide efficient heat transfer while limiting PCB space requirements.
Target applications include AC/DC power supplies, server power systems, industrial power conversion equipment and renewable energy systems.
The MDTK072N60H is halogen-free, RoHS compliant and rated at Moisture Sensitivity Level 1 (MSL 1).
Original – Micro Commercial Components
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MCC has introduced the MCACL1D6N06YH, a 60V N-channel power MOSFET designed for high-current switching and power conversion in space-constrained industrial applications.
The device uses MCC’s Split Gate Trench MOSFET technology and provides a maximum RDS(on) of 1.6mΩ, reducing conduction losses during high-current operation. It supports a continuous drain current of up to 242A.
The MCACL1D6N06YH has a total gate charge of 84.2nC, balancing switching performance with the low on-resistance required for high-power applications.
Thermal performance is supported by a junction-to-case thermal resistance of 0.81°C/W. The MOSFET is housed in a compact PDFN5060 surface-mount package with an exposed thermal pad to improve heat transfer from the device.
The 60V MOSFET is intended for industrial motor drives, DC/DC converters and power-distribution systems, as well as industrial automation equipment, telecom power systems, brushless DC motor drives, server power supplies and robotics.
The combination of a 242A current rating, 1.6mΩ maximum RDS(on), Split Gate Trench architecture and thermally enhanced PDFN5060 packaging is designed to support high-current power conversion where PCB area and thermal management are constrained.
Original – Micro Commercial Components
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Alpha and Omega Semiconductor (AOS) has introduced two 600V αMOS E2 Super Junction MOSFETs targeting high-voltage power conversion applications, including servers, workstations, telecom rectifiers, solar inverters, motor drives and industrial power systems.
The new AOGT037V60DE2 and AOGT060V60DE2 are based on AOS’ αMOS E2 high-voltage MOSFET platform and use the company’s top-side-cooled GTPAK package. The devices are designed for applications requiring higher power density, efficient thermal management and increased system reliability.
The αMOS E2 platform provides body-diode ruggedness with a di/dt capability of 1500A/µs, along with avalanche unclamped inductive switching (UIS) capability and short-circuit withstand performance. The devices also feature a fast integrated body diode with reduced reverse-recovery charge and are designed to prevent unwanted self-turn-on under dynamic operating conditions.
AOS combines the αMOS E2 silicon technology with its GTPAK package, which transfers heat through a top-side cooling pad. This configuration separates the primary thermal path from the PCB, allowing designers to optimize heat dissipation while reducing the board area required for thermal management.
The GTPAK package also uses gull-wing leads to improve board-level mechanical reliability. According to AOS, co-optimizing the electrical and thermal paths is intended to improve power density and long-term reliability in mid- to high-power systems.
The AOGT037V60DE2 and AOGT060V60DE2 are designed for multiple power conversion topologies, including boost PFC, the slow-switching leg of totem-pole PFC, LLC resonant converters, phase-shifted full-bridge converters and critical-conduction-mode H-4/cyclo inverter designs.
AOS is positioning the devices for high-performance AC/DC power supplies, DC/DC converters and DC/AC solar inverters, where thermal management, electromagnetic interference and PCB space can constrain power density.
Original – Alpha and Omega Semiconductor
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ROHM has developed its 4th Generation 650V IGBTs for automotive auxiliary systems and industrial equipment, combining low conduction losses with high short-circuit tolerance. Target applications include automotive electric compressors and high-voltage heaters, as well as industrial inverters, motors and compressors.
The new automotive-grade devices achieve VCE(sat) of 1.55V and comply with the AEC-Q101 automotive reliability standard. ROHM redesigned the device structure, manufacturing process and edge termination to increase current density while reducing both conduction and switching losses.
The devices provide a short-circuit withstand time of 7µs at a junction temperature of 25°C. This characteristic is designed to provide sufficient time for inverter and heater control circuits to detect overcurrent conditions and interrupt operation while maintaining low-loss performance during normal operation.
ROHM is positioning the 650V devices primarily for lower-power automotive systems where silicon IGBTs continue to be used alongside the increasing adoption of SiC in higher-power EV applications such as traction inverters. The devices also address industrial motor drives, compressors and other inverter-based equipment.
The initial portfolio includes 12 TO-247N packaged products in the RGAxxTS65HR and RGAxxTS65EHR series, along with 10 SG83xxWN bare-wafer products. ROHM is also developing 12 devices in the four-lead TO-247-4L package under the RGAxxTR65HR and RGAxxTR65EHR series.
TO-247N products and selected bare-wafer versions are already available, with a sample price of $8.50 per unit excluding tax. ROHM also provides design models and supporting materials for circuit development.
The company plans to expand the portfolio with additional devices using the existing packages as well as compact surface-mount IGBTs in TO-263L and top-side-cooled packages.
Original – ROHM
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ROHM has introduced a new lineup of 600V Super Junction MOSFETs, expanding its portfolio with the R60xxXNx and PrestoMOS™ R60xxWNx series. The new devices are designed to address the growing demand for higher efficiency, increased power density, and improved thermal performance in AI server power supplies, data centers, and industrial equipment.
As AI computing and industrial automation drive higher power consumption, power supply designers face increasing pressure to improve efficiency while reducing system size and heat generation. ROHM’s latest Super Junction MOSFETs target these challenges by combining low-loss performance with compact surface-mount packaging that supports automated assembly and improved thermal management.
The expanded lineup introduces two industry-standard surface-mount packages:
- DFN8080-5L (8.0 × 8.0 × 0.85 mm)
- TOLL (11.68 × 9.9 × 2.3 mm)
These low-profile packages offer excellent heat dissipation while enabling higher power density and more compact power supply designs.
The new MOSFET families feature:
- 600V Super Junction technology
- Gate threshold voltage (VGS(th)) of 3 V to 5 V for compatibility with standard gate-drive circuits
- Improved admittance characteristics compared with previous-generation R60xxYNx and PrestoMOS™ R60xxVNx devices
- Lower conduction and switching losses
- Surface-mount footprints compatible with existing industry-standard designs
The standardized package footprints also simplify product replacement and support second-source procurement strategies.
ROHM offers two series optimized for different design priorities:
R60xxXNx Series
- 21 device variants
- High-speed switching performance
- Designed for applications prioritizing compatibility and versatile operation
PrestoMOS™ R60xxWNx Series
- 11 device variants
- Class-leading high-speed reverse recovery performance
- Optimized for designs requiring maximum efficiency and lower switching losses
The new MOSFETs are intended for a broad range of high-voltage power conversion systems, including:
- AI server power supplies
- Data center power infrastructure
- Industrial power supplies
- Industrial automation equipment
- High-power AC-DC converters
- Other high-density power conversion applications
Original – ROHM
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Magnachip Semiconductor Corporation has introduced two new 6th-generation 600 V Super Junction (SJ) MOSFETs designed to address the increasing efficiency, power density, and reliability requirements of AI server power supplies and other high-performance power conversion applications.
The new devices feature low on-resistance values of 36 mΩ and 37 mΩ, helping reduce conduction losses and improve overall power conversion efficiency. Both products also integrate a Zener diode between the gate and source terminals, providing enhanced protection against electrostatic discharge (ESD) events and improving long-term device reliability in demanding operating environments.
In addition to improved electrical performance, the new generation incorporates a significantly smaller die size compared with previous Magnachip SJ MOSFET generations, enabling higher integration density and greater design flexibility for power system developers.
One of the newly released devices, the MMTB60R037G6FZVRH, incorporates a Fast Recovery Body Diode (FRD) structure that reduces reverse recovery losses and enhances switching performance during high-frequency operation.
These characteristics are particularly important for AI server power supplies, where maximizing efficiency, reducing thermal dissipation, and increasing power density have become critical design priorities as server rack power levels continue to rise.
Both devices are housed in a TOLL (TO-Leadless) package and are targeted at high-current, high-power applications. The package incorporates a Kelvin Source connection, which minimizes parasitic inductance, improves switching behavior, and enables more stable operation under fast switching conditions.
The launch comes as demand accelerates for more efficient power semiconductors across AI infrastructure, electric vehicle charging systems, telecommunications equipment, and industrial power supplies.
Modern power architectures increasingly require:
- Higher conversion efficiency
- Improved thermal performance
- Greater power density
- Enhanced reliability
- Reduced system footprint
Super Junction MOSFET technology continues to play a critical role in achieving these objectives, particularly in AC-DC front-end stages, power factor correction (PFC) circuits, and high-voltage switching applications.
According to market research firm Omdia, the discrete semiconductor market serving computing and data storage applications is projected to grow from approximately $3.7 billion in 2025 to approximately $5.9 billion by 2030, representing a compound annual growth rate (CAGR) of roughly 9%.
The expansion of AI infrastructure, cloud computing, and high-density server architectures is expected to be a major driver of this growth, increasing demand for advanced power semiconductor solutions capable of delivering higher efficiency and greater power density.
Hyuk Woo, Chief Technology Officer of Magnachip, highlighted the importance of power semiconductor performance in next-generation systems, noting that growing demand across AI infrastructure, EV charging networks, and industrial power applications is creating increasing requirements for efficiency and reliability.
According to the company, the new 6th-generation SJ MOSFET platform combines low on-resistance, enhanced switching performance, and improved robustness to help customers optimize power conversion efficiency while reducing system size and thermal management requirements.
While developed with AI server power systems in mind, the new MOSFETs are also suitable for a broad range of high-efficiency power conversion applications, including:
- AI and cloud server power supplies
- Telecom infrastructure power systems
- Industrial power supplies
- EV charging equipment
- Data center power distribution
- High-power AC-DC converters
- Renewable energy power conversion systems
With the introduction of these devices, Magnachip continues to expand its power semiconductor portfolio to address the growing demand for efficient, reliable, and high-density power solutions across data center, industrial, and electrification markets.
Original – Magnachip Semiconductor
