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ROHM has introduced a new lineup of 600V Super Junction MOSFETs, expanding its portfolio with the R60xxXNx and PrestoMOS™ R60xxWNx series. The new devices are designed to address the growing demand for higher efficiency, increased power density, and improved thermal performance in AI server power supplies, data centers, and industrial equipment.
As AI computing and industrial automation drive higher power consumption, power supply designers face increasing pressure to improve efficiency while reducing system size and heat generation. ROHM’s latest Super Junction MOSFETs target these challenges by combining low-loss performance with compact surface-mount packaging that supports automated assembly and improved thermal management.
The expanded lineup introduces two industry-standard surface-mount packages:
- DFN8080-5L (8.0 × 8.0 × 0.85 mm)
- TOLL (11.68 × 9.9 × 2.3 mm)
These low-profile packages offer excellent heat dissipation while enabling higher power density and more compact power supply designs.
The new MOSFET families feature:
- 600V Super Junction technology
- Gate threshold voltage (VGS(th)) of 3 V to 5 V for compatibility with standard gate-drive circuits
- Improved admittance characteristics compared with previous-generation R60xxYNx and PrestoMOS™ R60xxVNx devices
- Lower conduction and switching losses
- Surface-mount footprints compatible with existing industry-standard designs
The standardized package footprints also simplify product replacement and support second-source procurement strategies.
ROHM offers two series optimized for different design priorities:
R60xxXNx Series
- 21 device variants
- High-speed switching performance
- Designed for applications prioritizing compatibility and versatile operation
PrestoMOS™ R60xxWNx Series
- 11 device variants
- Class-leading high-speed reverse recovery performance
- Optimized for designs requiring maximum efficiency and lower switching losses
The new MOSFETs are intended for a broad range of high-voltage power conversion systems, including:
- AI server power supplies
- Data center power infrastructure
- Industrial power supplies
- Industrial automation equipment
- High-power AC-DC converters
- Other high-density power conversion applications
Original – ROHM
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Magnachip Semiconductor Corporation has introduced two new 6th-generation 600 V Super Junction (SJ) MOSFETs designed to address the increasing efficiency, power density, and reliability requirements of AI server power supplies and other high-performance power conversion applications.
The new devices feature low on-resistance values of 36 mΩ and 37 mΩ, helping reduce conduction losses and improve overall power conversion efficiency. Both products also integrate a Zener diode between the gate and source terminals, providing enhanced protection against electrostatic discharge (ESD) events and improving long-term device reliability in demanding operating environments.
In addition to improved electrical performance, the new generation incorporates a significantly smaller die size compared with previous Magnachip SJ MOSFET generations, enabling higher integration density and greater design flexibility for power system developers.
One of the newly released devices, the MMTB60R037G6FZVRH, incorporates a Fast Recovery Body Diode (FRD) structure that reduces reverse recovery losses and enhances switching performance during high-frequency operation.
These characteristics are particularly important for AI server power supplies, where maximizing efficiency, reducing thermal dissipation, and increasing power density have become critical design priorities as server rack power levels continue to rise.
Both devices are housed in a TOLL (TO-Leadless) package and are targeted at high-current, high-power applications. The package incorporates a Kelvin Source connection, which minimizes parasitic inductance, improves switching behavior, and enables more stable operation under fast switching conditions.
The launch comes as demand accelerates for more efficient power semiconductors across AI infrastructure, electric vehicle charging systems, telecommunications equipment, and industrial power supplies.
Modern power architectures increasingly require:
- Higher conversion efficiency
- Improved thermal performance
- Greater power density
- Enhanced reliability
- Reduced system footprint
Super Junction MOSFET technology continues to play a critical role in achieving these objectives, particularly in AC-DC front-end stages, power factor correction (PFC) circuits, and high-voltage switching applications.
According to market research firm Omdia, the discrete semiconductor market serving computing and data storage applications is projected to grow from approximately $3.7 billion in 2025 to approximately $5.9 billion by 2030, representing a compound annual growth rate (CAGR) of roughly 9%.
The expansion of AI infrastructure, cloud computing, and high-density server architectures is expected to be a major driver of this growth, increasing demand for advanced power semiconductor solutions capable of delivering higher efficiency and greater power density.
Hyuk Woo, Chief Technology Officer of Magnachip, highlighted the importance of power semiconductor performance in next-generation systems, noting that growing demand across AI infrastructure, EV charging networks, and industrial power applications is creating increasing requirements for efficiency and reliability.
According to the company, the new 6th-generation SJ MOSFET platform combines low on-resistance, enhanced switching performance, and improved robustness to help customers optimize power conversion efficiency while reducing system size and thermal management requirements.
While developed with AI server power systems in mind, the new MOSFETs are also suitable for a broad range of high-efficiency power conversion applications, including:
- AI and cloud server power supplies
- Telecom infrastructure power systems
- Industrial power supplies
- EV charging equipment
- Data center power distribution
- High-power AC-DC converters
- Renewable energy power conversion systems
With the introduction of these devices, Magnachip continues to expand its power semiconductor portfolio to address the growing demand for efficient, reliable, and high-density power solutions across data center, industrial, and electrification markets.
Original – Magnachip Semiconductor
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Toshiba Electronics Europe GmbH has expanded its portfolio of N-channel power MOSFETs with the introduction of nine new devices designed for industrial power applications. The new lineup includes three 100 V MOSFETs targeting 48 V power rails and six 60 V MOSFETs intended for 24 V systems.
The new products have been developed in response to the ongoing transition in industrial equipment from traditional 12 V and 24 V power architectures to 48 V systems, a trend driven by the need to improve energy efficiency and reduce power consumption.
As industrial equipment adopts higher supply voltages, power systems must also withstand higher transient conditions. Toshiba noted that inrush currents and voltage surges on 48 V power lines can result in voltage levels exceeding 50 V to 80 V, making 100 V-rated MOSFETs necessary to ensure reliable operation. At the same time, equipment manufacturers continue to seek higher efficiency, lower power losses, and more compact designs.
To address these requirements, Toshiba has introduced solutions for both emerging 48 V architectures and the widely deployed 24 V systems currently used across industrial applications.
The new MOSFETs are offered in three package options designed to meet a variety of system-level requirements.
For applications prioritizing versatility and ease of implementation, Toshiba offers devices in the SOT-23F package, which measures 2.9 mm × 2.4 mm and provides power dissipation of up to 1 W.
For designs requiring enhanced thermal performance and higher power dissipation capability, the TSOP6F package measures 2.9 mm × 2.8 mm and supports power dissipation up to 1.5 W.
In applications where space constraints are critical, the UDFN6B package provides an ultra-compact solution with a footprint of approximately 2.0 mm × 2.0 mm while delivering power dissipation of up to 1.25 W.
Despite their compact package dimensions, all new devices feature low drain-source on-resistance (RDS(on)), helping to reduce conduction losses and improve overall system efficiency.
According to Toshiba, the combination of high efficiency, low power loss, and compact package options makes the new MOSFETs suitable for a wide range of applications. These include industrial equipment such as programmable logic controllers (PLCs), inverter systems, servo motor drives, and servers, as well as consumer products including LED lighting systems, water heaters, water purifiers, and robotic vacuum cleaners.
With the introduction of these new devices, Toshiba continues to expand its power semiconductor portfolio to address evolving industrial power system requirements and support the industry’s transition toward higher-efficiency 24 V and 48 V architectures.
Original – Toshiba
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Toshiba Electronic Devices & Storage Corporation has developed a 6500 V-rated trench-type second-generation Injection Enhanced Gate Transistor (IEGT) chip featuring enhanced turn-off capability and short-circuit robustness. The company has also commercialized a new 6500 V press-pack IEGT (PPI) incorporating the technology for use in high-voltage applications, including HVDC transmission systems, STATCOM installations, and industrial motor drives.
The new device increases the voltage rating from the conventional 4500 V class to 6500 V, enabling a reduction in the number of power semiconductor devices connected in series for a given output voltage. According to Toshiba, this contributes to simpler system architectures and more compact power conversion equipment.
The development comes as the deployment of renewable energy continues to expand worldwide, increasing the need for efficient long-distance power transmission and advanced grid stabilization technologies. Since power generation sites and energy consumption centers are often geographically separated, high-voltage direct current (HVDC) transmission systems are becoming increasingly important. At the same time, the adoption of static synchronous compensators (STATCOMs) is growing to support grid stability.
In these high-voltage power conversion systems, multiple semiconductor devices are typically connected in series. Increasing the voltage rating of individual devices reduces the number of required components, helping lower system complexity and equipment size.
Toshiba has previously mass-produced 4500 V-class press-pack IEGTs. However, achieving reliable operation at 6500 V requires maintaining sufficient turn-off capability and short-circuit performance under significantly higher voltage conditions. This challenge is closely linked to the precise control of carrier transport within the semiconductor structure. In addition, variations in breakdown voltage observed during bias testing represented another technical hurdle.
To address these challenges, Toshiba developed a new 6500 V IEGT chip featuring a shorted dummy cell structure in the cell region, eliminating floating regions that can cause unstable potential distribution. The company also optimized the mesa width within the current conduction region and introduced an N-barrier layer beneath the P-base layer responsible for carrier transport control.
These structural enhancements improve carrier distribution and current flow throughout the device, resulting in more uniform current distribution during turn-off operation. Toshiba stated that this enables stable operation with sufficient turn-off capability and short-circuit performance under high-voltage conditions. The company also confirmed an improved trade-off between conduction losses and switching losses.
In the termination region, Toshiba adopted a structure incorporating guard rings and a semi-insulating layer to distribute the electric field more effectively. This design enables breakdown voltages exceeding 6500 V. Additionally, optimization of the interface process between the semi-insulating layer and silicon suppresses breakdown voltage variations observed under bias stress conditions, contributing to more stable device characteristics.
The newly developed chip has undergone turn-off and short-circuit testing at a voltage of 4500 V, confirming its suitability for high-voltage power applications.
Based on this technology, Toshiba has commercialized the ST2000JXH35A, a 6500 V / 2000 A press-pack IEGT. In HVDC transmission systems, the use of 6500 V devices can reduce the number of series-connected semiconductor devices by approximately 33% compared with 4500 V solutions, contributing to lower system size and weight.
Toshiba stated that it will continue developing press-pack IEGT technologies for high-voltage power conversion applications while expanding its product portfolio to support the advancement of power transmission and energy infrastructure systems.
The technology was presented at PCIM Europe 2026, held in Nuremberg, Germany, from June 9 to 11, 2026.
Original – Toshiba
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Toshiba Electronics Europe GmbH has announced the introduction of three new 40 V N-channel power MOSFETs for automotive applications. The new devices include the XPMR5904PB, which is available immediately, and the XPMR7404PB and XPMR8504PB, which are scheduled for release shortly. The products utilize Toshiba’s newly developed SOP Advance(EWF) package and are designed for demanding automotive systems such as inverters, semiconductor relays, load switches, and motor drives.
A key feature of the new devices is the adoption of the SOP Advance(EWF) package, which incorporates a post-less internal structure. Instead of using conventional internal posts, the package connects the semiconductor chip to the external leads through a copper clip. This design reduces the resistance of the current path by eliminating internal posts and optimizing current flow within the package.
The devices also employ a source-coupled structure that connects source terminals on the reverse side of the package, increasing the contact area with the PCB land pattern. This approach expands the available chip mounting area while enhancing current-carrying capability.
As a result, the XPMR5904PB achieves a continuous drain current rating of 180 A, representing a 20% increase compared with existing products that use similar SOP Advance(WF) packaging.
Toshiba has also improved key electrical and thermal performance characteristics to meet the requirements of high-current automotive applications. Compared with the company’s existing XPHR7904PS device, the XPMR5904PB delivers approximately 25% lower drain-source on-resistance (RDS(ON)) and approximately 38% lower channel-to-case thermal impedance (Zth(ch-c)). These improvements help reduce power losses and support higher system efficiency.
To enhance manufacturing quality and inspection reliability, the SOP Advance(EWF) package incorporates a wettable flank structure. This surface-mount package design improves visibility of solder joints, allowing automated optical inspection (AOI) systems to more easily verify soldering quality during production. The feature supports automated manufacturing processes while helping manufacturers meet the stringent quality and reliability requirements of the AEC-Q101 automotive qualification standard.
The introduction of the new MOSFETs expands Toshiba’s automotive power semiconductor portfolio and provides additional options for designers developing high-performance automotive power systems. The devices are intended to support applications requiring higher current capability, improved thermal management, and enhanced manufacturing reliability.
Toshiba stated that it will continue expanding its power semiconductor portfolio and developing advanced automotive MOSFET technologies to support a broad range of vehicle applications while contributing to ongoing electrification and carbon reduction initiatives.
Original – Toshiba
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Infineon Technologies AG has introduced two new system-level power solutions designed to address the evolving requirements of artificial intelligence (AI) data centers. The company unveiled an 18 kW three-phase power supply unit (PSU) reference design optimized for 50 V rack architectures and a 30 kW three-phase interleaved T-Type power factor correction (PFC) evaluation board developed for 800 VDC or ±400 VDC rack architectures with power sidecar configurations.
The two solutions are part of Infineon’s broader AI server power delivery portfolio and are intended to help server ODMs and OEMs accelerate development while achieving higher rack power, improved efficiency, and enhanced thermal performance.
As AI workloads continue to increase GPU power consumption and drive higher rack densities, data center power infrastructures are facing growing challenges. Infineon’s new designs are aimed at addressing these demands through advanced power conversion technologies and system-level integration.
The 18 kW PSU reference design incorporates a new integrated energy buffer concept that smooths power demand from the electrical grid during AI-related peak loads, eliminating the need for a separate capacitor bank unit. According to Infineon, this approach enables more efficient use of stored energy and reduces the required capacitor volume by up to 50%, lowering both component costs and system footprint.
The 30 kW PFC evaluation board utilizes Infineon’s CoolGaN™ semiconductor technology to achieve higher power density while reducing overall system cost, targeting data center operators expanding infrastructure to support increasing AI computing requirements.
The 18 kW PSU reference design achieves a peak efficiency of 97.5% through a combination of 650 V CoolSiC™ MOSFETs, 80 V CoolGaN™ switches, EiceDRIVER™ gate drivers, and a PSOC™ microcontroller. At the core of the system is a five-level active neutral-point clamped (ANPC) PFC topology, designed to deliver high efficiency across the full load range, particularly under low-to-medium load conditions, while reducing the size of magnetic components.
Infineon states that the ANPC topology provides a 0.2% higher peak efficiency at 50% load compared to a T-Type PFC design and a 0.4% improvement over a Vienna Rectifier topology.
The design also incorporates a novel integrated planar magnetic structure that enables a compact, modular, and scalable high-frequency transformer configuration. The integrated energy buffer provides a 20-millisecond hold-up time and supports GPU electrical data peak processing (EDPP) loads of up to 180%, meeting demanding AI load transient requirements.
The PSU accepts a wide three-phase input voltage range of 311 VAC to 528 VAC, allowing compatibility with global power grid standards. Thermal management has been engineered to support operation in ambient temperatures ranging from -5°C to 45°C.
Measuring 104 mm × 710 mm × 40 mm, the PSU is designed to fit standard 19-inch rack enclosures while delivering a power density of 100 W/in³.
The 30 kW T-Type PFC evaluation board combines 650 V CoolGaN™ bidirectional switches in the back-to-back switching path with 1200 V CoolSiC™ MOSFETs in the high-voltage power stage. The system achieves a peak efficiency exceeding 99%.
Power control is managed through the programmable power control accelerator (PPCA) integrated into the PSOC™ C3 microcontroller, enabling precise current and voltage regulation with fast dynamic response. The design maintains input current total harmonic distortion (iTHD) below 5% for loads above 30% and achieves a power factor greater than 0.99 across most operating conditions.
Current measurement is performed using the XENSIV™ TLE4978 isolated magnetic Hall plus Coil current sensor, which offers a bandwidth of 9 MHz, strong common-mode transient immunity (CMTI), and high measurement accuracy. These characteristics make the solution suitable for next-generation silicon carbide and gallium nitride-based power supply systems.
The modular platform is designed for integration into a 1U full-size PSU form factor and targets high-voltage DC data center applications requiring accurate voltage regulation and effective thermal management under the dynamic operating conditions associated with AI workloads.
Both designs are optimized for use with Infineon’s AI server power delivery portfolio, which spans the complete power chain from grid connection to processor core. The portfolio includes solid-state transformers, circuit breakers, power supply units, battery backup units, intermediate bus converters, and second-stage DC conversion power modules.
By combining silicon (Si), silicon carbide (SiC), and gallium nitride (GaN) technologies, Infineon provides a comprehensive platform for end-to-end power architectures supporting next-generation AI server infrastructure. The solutions are backed by scalable components, design resources, and system-level support aimed at accelerating deployment of advanced AI data center power systems.
Both the 18 kW three-phase PSU reference design and the 30 kW three-phase T-Type PFC evaluation board are expected to be available for evaluation in the near future.
Original – Infineon Technologies
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Infineon Technologies AG has introduced a 24 kW battery backup unit (BBU) DC-DC reference design for high-voltage (HV) DC bus architectures in artificial intelligence (AI) data centers. The solution is the first reference design of its kind to operate directly from a battery stack to an 800 V DC bus using both 650 V and 1200 V silicon carbide (SiC) technologies. It delivers a power density of 450 W/in³ and efficiency exceeding 99%, while maintaining the same physical form factor as current low-voltage BBU implementations.
The reference design addresses a key infrastructure challenge as data centers increasingly transition toward higher-voltage DC power distribution architectures.
“Powering AI at scale demands a systemic approach that optimizes every stage of the power delivery chain, from grid connection to the processor core,” said Magdalene Boebel, Senior Vice President and Business Line Head Power System ICs at Infineon. “Our 24 kW high-voltage BBU reference design, operating directly on an 800 V DC bus, sets a new benchmark in power density and efficiency, giving data center architects a fully integrated solution to meet the most demanding AI infrastructure requirements.”
The design is based on a multi-level, multiphase non-isolated architecture that combines stacked, interleaved, and coupled boost and buck stages. This architecture reduces magnetic component volume without relying on flying capacitors. A shared switching-leg topology creates a common current path between charge and discharge stages, enabling zero-voltage switching (ZVS) across the operating range.
According to Infineon, this approach reduces current ripple, supports fully integrated magnetics, and delivers fast transient response capabilities that are increasingly important as AI server power consumption becomes more dynamic and less predictable.
The compact module measures 112 mm × 88 mm × 118 mm and integrates a 24 kW main power stage together with a 2.4 kW auxiliary power supply. Charger and discharger sections share key components, including the EMI filter, capacitors, and protection MOSFETs, helping to reduce the overall component count. The design also incorporates silicon carbide junction gate field-effect transistors (JFETs) for ORing and hot-swap functionality, while a planar transformer combined with CoolSET™ technology implements the auxiliary switched-mode power supply in a compact footprint.
At the core of the DC-DC conversion stage is the CoolSiC™ MOSFET IMT65R033M2H, a 650 V device qualified for bidirectional buck-boost DC-DC operation in high-voltage BBU applications. The device’s low conduction and switching losses support conversion-stage efficiencies above 99%, reducing thermal load at rack level.
During grid disturbances, generator transitions, or power outages, the device enables rapid energy transfer between the HV DC bus and the battery with minimal losses. The IMT65R033M2H features a 650 V breakdown voltage rating, robust body diode, 175°C junction temperature capability, and Infineon’s .XT packaging technology to support operation under voltage spikes, high dv/dt transients, and continuous thermal cycling. Consistent gate-threshold voltage characteristics across devices also simplify multi-phase system design and support redundant rack configurations.
The architecture is documented in Infineon’s REF_12KW_HFHD_PSU reference design, which demonstrates the use of the IMT65R033M2H in high-power DC-DC stages for rack-level HV BBU applications.
The complete bill of materials includes CoolSiC 650 V Generation 2 MOSFETs, including the IMT65R033M2H, EiceDRIVER™ gate drivers, TLE497x current sensors, PSOC™ Performance line microcontrollers, CoolSET™ ICs for the auxiliary power supply, and a 1.7 kV SiC MOSFET.
Additional design features include reduced common-mode noise with negligible AC components and fully integrated magnetics. The design utilizes three power cards that provide mechanical connections for the positive DC, negative DC, and midpoint rails, while also serving as structural elements within the assembly, contributing to the solution’s compact footprint.
As data center operators move toward higher-voltage DC bus architectures to improve efficiency and reduce power distribution losses, battery backup units are becoming increasingly important for maintaining uninterrupted power delivery to AI servers during grid events. Infineon stated that the 24 kW HV BBU reference design demonstrates how silicon carbide-based DC-DC conversion can address the power density, efficiency, and reliability requirements of next-generation AI infrastructure.
The company’s broader power portfolio spans silicon (Si), silicon carbide (SiC), and gallium nitride (GaN) technologies, covering power conversion requirements across the entire power delivery chain from the electrical grid to the processor core.
Original – Infineon Technologies
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Infineon Technologies AG has introduced its new OptiMOS™ 8 100 V power MOSFET technology, designed to address the increasing power handling requirements driven by megatrends such as green mobility, robotics, and artificial intelligence. The latest generation of OptiMOS technology incorporates application-specific optimizations for RDS(on)-focused applications, including motor control systems and battery protection solutions.
Compared to the previous OptiMOS 5 generation, the new OptiMOS 8 100 V technology delivers up to 44% lower RDS(on), improving both performance and cost efficiency. According to Infineon, these improvements enable up to 18% higher peak current output in motor drive inverter applications, establishing a new benchmark for this class of devices.
For static switching applications such as battery protection circuits in battery management systems (BMS), the reduced RDS(on) supports higher power density, lower component count, and improved thermal performance.
As AI data centers continue to expand and operate at higher power levels, battery backup units (BBUs) are facing increasing power density requirements. Infineon states that the OptiMOS 8 100 V technology is designed to support these demands by enabling higher power density in high-power BBU systems.
The new MOSFET family features a tightly controlled threshold voltage variation (ΔVGS(th)) of less than 0.8 V combined with low transconductance (gfs), characteristics that contribute to optimized current sharing and enhanced system reliability.
To address a broad range of end applications, the OptiMOS 8 100 V portfolio is offered in multiple package options, including clip-based packages such as the TOLL with Copper Clip and the established SuperSO8 5×6 package. These package technologies are designed to provide improved thermal performance while supporting compact system designs.
Infineon has also introduced a reference design demonstrating the capabilities of the new technology in a practical application. The design combines OptiMOS 8 100 V MOSFETs with XENSIV™ TMR current sensors and a PSOC™ Control C3 microcontroller to implement field-oriented control (FOC) for battery-powered drone applications. The platform is designed as a ready-to-use solution for electronic speed controller (ESC) development.
The OptiMOS 8 100 V product family will be available beginning in June.
Original – Infineon Technologies
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Micro Commercial Components has launched the MCACD8D5N06YL, a dual N-channel MOSFET array designed to improve efficiency and integration in space-constrained power systems.
The device integrates two matched 60 V MOSFETs within a single compact PDFN5060-8D package, reducing component count and simplifying gate drive design. This integration enables more compact power stage layouts while maintaining strong electrical and thermal performance.
Featuring a low maximum RDS(on) of 8.5 mΩ and built on split-gate trench MOSFET technology, the device minimizes both conduction and switching losses. The matched characteristics of the dual MOSFET configuration ensure balanced current sharing and predictable switching behavior—key advantages for synchronous rectification and parallel power stage designs.
With support for up to 50 A continuous drain current and a thermally efficient package design, the MCACD8D5N06YL is well suited for high-current applications such as DC-DC converters, load switches, and motor control systems across consumer and industrial markets.
From a market perspective, this product reflects the growing demand for higher integration in low-voltage power stages, particularly in AI servers, telecom systems, and compact industrial electronics. While wide-bandgap devices continue to dominate high-voltage segments, advanced silicon MOSFET integration—such as dual or multi-die configurations—remains critical for improving power density, reducing PCB footprint, and optimizing system cost in high-current, low-voltage applications.
Original – Micro Commercial Components
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Micro Commercial Components has launched the MCTLD58N04Y, a 40 V N-channel MOSFET engineered for high-current power applications such as motor drivers, power tools, and industrial power systems.
The device features an ultra-low RDS(on) of 0.58 mΩ and supports a high continuous drain current of up to 639 A (depending on thermal conditions), enabling efficient conduction and stable operation under heavy load. This combination is particularly valuable in low-voltage, high-current designs where minimizing conduction losses is critical.
Built on split-gate trench MOSFET technology, the MCTLD58N04Y delivers low switching losses and improved efficiency, supporting compact system designs where thermal management and board space are key constraints. The MOSFET also offers strong avalanche ruggedness, making it suitable for handling transient and inductive load conditions commonly found in motor drive and industrial environments.
The device is housed in a thermally efficient TOLL-8L package, which provides low thermal resistance and effective heat dissipation, supporting reliable operation in demanding applications.
From a market perspective, this product aligns with the growing demand for high-current, low-voltage MOSFETs in electrified systems, including battery-powered tools, industrial automation, and emerging 48 V architectures. While wide-bandgap technologies dominate higher voltage segments, advanced silicon MOSFETs like this remain essential for optimizing efficiency and cost in low-voltage, high-current stages.
MCC’s latest release reinforces its focus on delivering high-performance silicon solutions for mainstream power applications where scalability, robustness, and cost-effectiveness are key decision factors.
Original – Micro Commercial Components
