• Infineon Technologies Introduced New 650 V CoolSiC™ MOSFETs in Q-DPAK and TOLL Packages

    Infineon Technologies Introduced New 650 V CoolSiC™ MOSFETs in Q-DPAK and TOLL Packages

    2 Min Read

    The electronics industry is experiencing a significant shift towards more compact and powerful systems. To support this trend and further drive innovation at the system level, Infineon Technologies AG is expanding its portfolio of discrete CoolSiC™ MOSFETs 650 V with two new product families housed in Q-DPAK and TOLL packages.

    These diverse product families, with top- and bottom-side cooling, are based on the CoolSiC™ Generation 2 (G2) technology and offer significantly improved performance, reliability, and ease of use. The product families target high- and medium-power switched-mode power supplies (SMPS) including AI servers, renewable energy, chargers for electric vehicles, e-mobility and humanoid robots, televisions, drives and solid-state circuit breakers.

    The TOLL package offers outstanding Thermal Cycling on Board (TCoB) capability, enabling compact system designs by reducing the printed circuit board (PCB) footprint. When used in SMPS, it can also reduce system-level manufacturing costs. The TOLL package now fits an extended list of target applications, enabling PCB designers to further reduce costs and better meet market demands.

    The introduction of the Q-DPAK package complements the ongoing development of Infineon’s new family of Topside Cooled (TSC) products, which includes CoolMOS™ 8, CoolSiC™, CoolGaN™ and OptiMOS™. The TSC family enables customers to achieve excellent robustness with maximum power density and system efficiency at low cost. It also enables direct heat dissipation of 95 percent, allowing the use of both sides of the PCB for better space management and reduction of parasitic effects.

    The CoolSiC™ MOSFETs 650 V G2 in TOLL are now available in R DS(on) from 10 to 60 mΩ, while the Q-DPAK variant is available in 7, 10, 15 and 20 mΩ.

    Original – Infineon Technologies

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  • SemiQ Announced New 1200V 3rd Gen SiC MOSFETs with Enhanced Performance and Low Switching Losses

    SemiQ Announced New 1200V 3rd Gen SiC MOSFETs with Enhanced Performance and Low Switching Losses

    3 Min Read

    SemiQ Inc has announced the QSiC 1200V MOSFET, a third-generation SiC device that shrinks the die size while improving switching speeds and efficiency.

    The device is 20% smaller versus QSiC’s second-generation SiC MOSFETs and has been developed to increase performance and cut switching losses in high-voltage applications. SemiQ is targeting a diverse range of markets including EV‑charging stations, solar inverters, industrial power supplies and induction heating.

    It will be on display for the first time at the Applied Power Electronics Conference (APEC), on March 16-20, 2025.

    In addition to having a drain-to-source voltage (VDS) of 1200 V, the MOSFET reduces total switching losses to 1646 µJ and has a low on-resistance (RDS,on) of 16.1 mΩ. It is available as a bare die or in a four-pin TO-247 4L discrete package measuring 31.4 x 16.1 x 4.8 mm, which includes a reliable body diode and a driver-source pin for gate driving.

    High-quality Known Good Die (KGD) testing has been conducted using UV tape and Tape & Reels, with all parts undergoing testing and verification at voltages exceeding 1400V, as well as being avalanche tested to 800 mJ. Reliability is further improved through the device’s 100% wafer-level gate oxide burn-in screening and 100% UIL testing of discrete packaged devices.

    The device has been developed to have a low reverse recovery charge (QRR 470 nC) and lower capacitance, improving switching speed, switching losses, EMI and overall efficiency; to be easy to parallel; and with a longer creepage distance (9 mm), improving electrical insulation, voltage tolerance and reliability.

    Dr. Timothy Han, President at SemiQ said: “The move to Gen3 SiC further increases the benefits of SiC MOSFETs over IGBTs. These devices not only deliver vastly improved performance, but cut die size and cost versus previous generations. As a result, the launch of the QSiC 1200V opens the technology, and its benefits, to a far greater range of applications. The device delivers industry leading performance figures, notably on gate threshold voltage, and we’re delighted to be demonstrating this first at APEC.”

    The QSiC 1200V MOSFETs has a continuous operational and storage temperature of -55oC to 175oC. It has a recommended operational gate-source voltage of -4/18 V, with a VGSmax of -8/22 V, and a power dissipation of 484 W (core and junction temperature 25oC).

    For static electrical characteristics, the device has a junction-to-case thermal resistance of 0.26oC per watt (40oC per watt junction to ambient). Its Zero gate voltage drain current is 100 nA, with a gate-source voltage current of 10 nA. Its AC characteristics include a turn-on delay time of 21 ns with rise time of 25 ns; its turn-off delay time is 65 ns with a fall time of 20 ns.

    An increased range of resistances is available in bare-die and TO-247 4L packages with the following options:

    • 16 mΩ: GP3T016A120X / GP3T016A120H
    • 20 mΩ: GP3T020A120X / GP3T020A120H
    • 40 mΩ: GP3T040A120X / GP3T040A120H
    • 80 mΩ: GP3T080A120X / GP3T040A120H

    Both the 16 mΩ (AS3T016A120X / AS3T016A120H) and 40 mΩ (AS3T040A120X / AS3T040A120H) options have been qualified for Automotive Applications Product Validation according to AEC-Q101.

    The SemiQ QSiC 1200V will be on display at the Georgia World Congress Center in Atlanta, from March 16 to 20, 2025. Visitors to SemiQ’s booth #1348 will have the opportunity to explore the new third-generation MOSFETs.

    Original – SemiQ

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  • Navitas GaN & SiC Devices Power Dell’s New AI-Optimized Notebook Family

    Navitas GaN & SiC Devices Power Dell’s New AI-Optimized Notebook Family

    2 Min Read

    Navitas Semiconductor announced its adoption of both technologies into Dell’s family of notebook adapters, from 60 W to 360 W.

    Enabled by over 20 years of SiC technology leadership, GeneSiC leads on performance of SiC MOSFETs with patented ‘trench-assisted planar’ technology and 5th-gen GeneSiC silicon carbide (SiC) diodes to deliver high-speed, high-efficiency performance with proprietary ’low-knee’ technology for cool operation.

    Navitas’ GaNFast power ICs enable high-frequency, high-efficiency power conversion, achieving 3x more power and 3x faster charging in half the size and weight compared to prior designs with legacy silicon power devices.  

    Navitas GaN & SiC technology together enables Dell to provide high-speed charging, with highest efficiency, coolest temperature, smallest size, and lowest material count. Dell’s latest line-up of AI notebooks includes Neural Processor Units (NPUs), which are dedicated AI engines, to manage sustained AI and AI offload. This builds on Dell’s portfolio as the broadest GaN adapter offering for notebooks in the industry.

    The new adapters will also help Dell achieve its advanced sustainability goals, with a focus on CO2 reduction and energy reduction. The adapter cases require up to 50% less plastic and are made with post-recycled materials, significantly reducing energy waste, and improving resource utilization. Navitas’ GaNFast and GeneSiC technologies increase the level of system integration and switching frequency, which reduces the number of components, as well as the size, resulting in a ‘dematerialization’ that lowers carbon footprint throughout the production, packaging, and logistics processes. Each GaNFast power IC shipped saves 4 kg CO2 and every SiC MOSFET shipped saves 25 kg CO2 vs. legacy silicon power chips.

    “Since Dell’s first GaN adapter was enabled by Navitas back in 2020, we’ve worked closely with Dell engineering to further improve charging speed, efficiency, size, weight, and now environmental footprint”, said Gene Sheridan, CEO and co-founder of Navitas. “Dell’s new adapters are an optimal solution for speed, portability, and sustainability. Our clients achieve a win-win for both the market and environment by deploying Navitas GaNFast power ICs and GeneSiC power devices.”

    Original – Navitas Semiconductor

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  • Vincotech Introduced flow E3BP Housing Enhancing Thermal Performance and Power Density

    Vincotech Introduced flow E3BP Housing Enhancing Thermal Performance and Power Density

    2 Min Read

    Vincotech announced the release of flow E3BP, an advancement of the company’s widely adopted flow 2 and flow E3 housing. Engineered to meet the increasingly challenging requirements for next-gen systems, the flow E3BP is the next step up the evolutionary ladder in power module technology across applications.

    Designed to boost thermal performance and maximize power density, this advanced housing is the go-to option for high-power systems and next-generation applications. Featuring a specially treated surface, its convex baseplate provides a superior thermal contact to better disperse heat and handle more power with a smaller footprint.

    The module’s CTI600 housing material holds up well to higher system voltages. Its isolation walls increase creepage and clearance distances. Pre-applied thermal interface material is optionally available, as are Press-fit pins. Rolling efficiency, reliability, and innovation into one exceptionally useful housing, the new flow E3BP meets demand for faster time to market, higher power ratings, and greater power density. An excellent fit for many different applications, it marks another stride towards a more sustainable future.

    Developed with the increasingly challenging demands of renewable energy systems in mind, the flow E3BP is a remarkably efficient power module. Among others, it enables customers to design 350+ kW utility string PV inverters with just a single housing per phase, cutting 30% of the cost for a dual-module solution. It also serves to reduce the heatsink area by as much as 34% compared to flow E3, thereby increasing power density to 51%.

    Chosen for its low inductivity, the new flow E3BP figures prominently in solar and ESS inverters for the utility and commercial segments. Today’s flow E3BP housing meets tomorrow’s 2000 V systems’ high voltage requirements, and the company aims to extend this product portfolio to address further applications such as motion control, industrial drives, and EV charging stations.

    Determined to enable customers to bring their ideas to life, Vincotech continues to develop its range of power module housings, which now encompasses 24 options rated from less than 10 kW up to MW. The flow 2, flow S3, and flow E3 housings see wide use in solar and ESS applications. The latest addition to the line, the leading-edge flow E3BP, supports beyond 350 kW and pushes the envelope for PV and ESS solutions.

    Original – Vincotech

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  • Infineon Technologies Predicts GaN Semiconductors to Reach Adoption Tipping Points Across Multiple Industries in 2025

    Infineon Technologies Predicts GaN Semiconductors to Reach Adoption Tipping Points Across Multiple Industries in 2025

    3 Min Read

    As the world continues to face the challenges of climate change and environmental sustainability, Infineon Technologies AG is at the forefront of innovation, harnessing the power of all relevant semiconductor materials including silicon (Si), silicon carbide (SiC), and gallium nitride (GaN) to drive meaningful progress towards decarbonization and digitalization.

    In its 2025 predictions – GaN power semiconductors, Infineon highlights that gallium nitride will be a game-changing semiconductor material revolutionizing the way we approach energy efficiency and decarbonization across consumer, mobility, residential solar, telecommunication, and AI data center industries. GaN provides significant benefits in end customers’ applications enabling efficient performance, smaller size, lighter weight, and lower overall cost. While USB-C chargers and adapters have been the forerunners, GaN is now on its way to reaching tipping points in its adoption in further industries, substantially driving the market for GaN-based power semiconductors.

    ”Infineon is committed to driving decarbonization and digitalization through innovation based on all semiconductor materials Si, SiC, and GaN,” said Johannes Schoiswohl, Head of the GaN Business Line at Infineon. “The relevance of comprehensive power systems will increase with GaN manifesting its role due to its benefits in efficiency, density, and size. Given that cost-parity with silicon is in sight, we will see an increased adoption rate for GaN this year and beyond.

    Powering AI will be highly depending on GaN. The rapid increase of required computing power and energy demand in AI data centers will drive the need for advanced solutions capable of handling the substantial loads associated with AI servers. Power supplies that once managed 3.3 kW are now evolving towards 5.5 kW, with projections moving towards 12 kW or more per unit. By leveraging GaN, AI data centers can improve power density, which directly influences the amount of computational power that can be delivered within a given rack space. While GaN presents clear advantages, hybrid approaches combining GaN with Si and SiC are ideal for meeting the requirements of AI data centers and achieving the best trade-offs between efficiency, power density and system cost.

    In the home appliance market, Infineon expects GaN to gain significant traction, driven by the need for higher energy efficiency ratings in applications like washing machines, dryers, refrigerators and water/heat pumps. In 800 W applications, for example, GaN can enable a two percent efficiency gain, which can help manufacturers achieve the coveted A ratings. According to Infineon, GaN-based on-board chargers and DC-DC converters in electric vehicles will contribute to a higher charging efficiency, power density, and material sustainability, with a shift towards 20 kW+ systems. Together with high-end SiC solutions, GaN will also enable more efficient traction inverters for both 400 V and 800 V EV systems, contributing to an increased driving range.

    In 2025 and beyond, robotics will see widespread adoption of GaN supported by the material’s ability to enhance compactness, driving growth in delivery drones, care robots and humanoid robots. As robotics technology integrates AI advancements like natural language processing and computer vision, GaN will provide the efficiency required for compact, high-performance designs. Integrating inverters within the motor chassis eliminates the inverter heatsink while reducing cabling to each joint/axis and simplifying EMC design.

    Infineon is further pushing investment in GaN research and development to overcome the challenges of cost and scalability. With the broadest product and IP portfolio, the highest quality standards, leading-edge innovations such as 300 mm GaN wafer manufacturing and bidirectional switch (BDS) transistors, the company is bolstering its leading role in driving decarbonization and digitalization based on all relevant semiconductor materials including gallium nitride.

    Download the “2025 GaN predictions” ebook here.

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  • FORVIA HELLA Adopts Infineon's new 1200 V CoolSiC™ MOSFET in Q-DPAK Package for Next-Gen 800 V DC-DC Charging Solutions

    FORVIA HELLA Adopts Infineon’s new 1200 V CoolSiC™ MOSFET in Q-DPAK Package for Next-Gen 800 V DC-DC Charging Solutions

    2 Min Read

    FORVIA HELLA, an international automotive supplier, has selected the new CoolSiC™ Automotive MOSFET 1200 V from Infineon Technologies AG for its next generation 800 V DCDC charging solution. Designed for on-board charger and DCDC applications in 800 V automotive architectures, Infineon’s CoolSiC MOSFET comes in a Q-DPAK package. The device uses top-side cooling (TSC) technology, which enables excellent thermal performance, easier assembly and lower system costs.

    “We are excited to continue our partnership with FORVIA HELLA, leveraging our high-efficiency SiC products based on TSC packages,” said Robert Hermann, Vice President of Automotive High-Voltage Chips and Discretes at Infineon. “We are continuously working to take e-mobility to the next level by providing state-of-the-art SiC solutions that meet the automotive industry’s stringent requirements for performance, quality, and system cost.”

    “Our customers are at the center of our efforts. That is why we have chosen Infineon’s  CoolSiC Automotive MOSFET 1200 V for our next generation of DCDC converters”, said Guido Schütte, Member of the Electronics Executive Board at FORVIA HELLA. “Together with Infineon, we will continue to offer sustainable and innovative products and comprehensive services that exceed our customers’ expectations and drive the development of advanced mobility.”

    Infineon’s new CoolSiC Automotive MOSFET 1200 V in the Q-DPAK package is based on Gen1p technology and offers a drive voltage in the range of V GS(off)= 0 V and V GS(on)= 20 V. The 0 V turn-off enables unipolar gate control, which simplifies design by reducing the number of components in the PCB.

    With a creepage distance of 4.8 mm, the package achieves an operating voltage of over 900 V without the need for additional insulation coating. Compared to backside cooling, the TSC technology ensures optimized PCB assembly, reducing parasitic effects and resulting in significantly lower leakage inductances. As a result, customers benefit from lower package parasitics and lower switching losses. Heat dissipation is further improved by diffusion soldering the chip with .XT technology.

    Original – Infineon Technologies

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  • Forge Nano Expands ALD Equipment Production with New Cleanroom to Meet Growing Semiconductor Demand

    Forge Nano Expands ALD Equipment Production with New Cleanroom to Meet Growing Semiconductor Demand

    3 Min Read

    Forge Nano, Inc. announced the completion of its new semiconductor cleanroom. The 2,000 sq ft cleanroom enables Forge Nano to manufacture multiple commercial TEPHRA™ ALD cluster tools to accommodate growing equipment demand from the semiconductor market.

    Forge Nano announced the expansion of its semiconductor ALD business in 2024 with the launch of TEPHRA – its new 200mm wafer atomic layer deposition cluster tool. Forge Nano’s ability to coat single wafers at 10x the throughput of traditional ALD systems has significantly grown customer demand thus requiring an expansion of the Company’s manufacturing capacity and addition of a demonstration space.

    “The Forge Nano TEPHRA can enable conformal metal barrier seed layers for through silicon (TSVs) and through glass vias (TGVs) at aspect ratios greater than 25:1 at production speeds,” said Matt Weimer, Director of R&D at Forge Nano. “We’re showcasing the capabilities of our atomic layer deposition solution for wafers, which we expect to position the company as a key enabler for advanced packaging and 3D chip integration.”

    The new cleanroom provides a Class 10 (ISO 4) space for processing sensitive customer samples and includes a metrology lab for advanced thin-film measurement and particle inspection. The remainder of the cleanroom will house Forge Nano’s own internal TEPHRA tool and provide space to build multiple customer tools, serving as a dual operating space for demonstrations and manufacturing. In addition to increased manufacturing space, this expansion is poised to accelerate Forge Nano’s ability to provide proof-of-concept and commercial solution validation to manufacturers planning to integrate new ALD processes.

    Powered by Forge Nano’s ALDx technology, which offers ultrathin, uniform, pinhole-free films with an unprecedented 10x throughput for single-wafer processing, TEPHRA is dedicated to the manufacturing of specialty semiconductor applications on 200mm wafers and below. With efficient chemical use, rapid cycle times, increased yield, and low-risk manufacturing, TEPHRA is the only single-wafer cluster tool with commercial throughput speeds serving 200mm applications in advanced packaging, power semiconductor, radio frequency devices (RFD), microLEDs, microelectromechanical systems (MEMS), and more.

    Forge Nano expects to deliver TEPHRA tools in early 2025. Forge Nano is offering on-site TEPHRA demonstrations to new and existing customers starting in early 2025. For more details on how to participate in the upcoming demonstration, please visit: https://www.forgenano.com/semiconductors  

    For more information on Forge Nano’s TEPHRA product, visit the TEPHRA product page at: https://www.forgenano.com/products/tephra

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  • Wolfspeed Unveils Gen 4 Silicon Carbide Platform for High-Power Efficiency and Durability Across Multiple Applications

    Wolfspeed Unveils Gen 4 Silicon Carbide Platform for High-Power Efficiency and Durability Across Multiple Applications

    3 Min Read

    Wolfspeed, Inc. introduced its new Gen 4 technology platform, which enables design rooted in durability and efficiency, all while reducing system cost and development time. Engineered to simplify switching behaviors and design challenges commonly experienced in high-power designs, Gen 4 charts a long-term roadmap across Wolfspeed’s product categories, including power modules, discrete components, and bare die products. These products are currently available in the 750V, 1200V and 2300V classes.

    “We understand that each application’s design comes with a unique set of requirements,” said Jay Cameron, senior vice president of Wolfspeed power products. “From its inception, our goal for Gen 4 has been to improve overall system efficiency in real-world operating environments, with a focus on delivering maximum performance at the system level. Gen 4 enables design engineers to create more efficient, longer-lasting systems that perform well in tough operating environments at a better overall system cost.”

    Silicon carbide technology is one of the fastest growing components of both the power device market and the greater semiconductor industry. A superior alternative to silicon, silicon carbide is ideal for high power applications – such as EV powertrains, e-mobility, renewable energy systems, battery energy storage systems, and AI data centers – that unlocks improved performance and lower system costs.

    As the U.S. and the globe pursue more efficient and environmentally friendly solutions to meet the world’s ever-increasing need for high-voltage energy sources, it is crucial that the U.S. continue to make strategic investments to cement its technological dominance, while continuing to spur American innovation in critical technologies.

    Wolfspeed is the only silicon carbide producer with both silicon carbide material and silicon carbide device fabrication facilities based in the United States, a factor that is becoming increasingly important under the new U.S. Administration’s increased focus on national security and investment in U.S. semiconductor production.

    “Innovative technology unlocks business opportunity,” said Devin Dilley, president and chief product officer, EPC Power, a U.S.-based utility-scale inverter manufacturer. “Wolfspeed’s new Gen 4 SiC technology is enabling EPC Power to make a paradigm shift in how energy is created and stored globally.”

    “As the world-leader in silicon carbide technology, based on American IP and delivered through U.S.-based fabrication facilities, Wolfspeed has been relentless in our drive to continue to innovate and bring our silicon carbide solutions to more and more industries with increasingly challenging use cases,” said Wolfspeed Executive Chairman, Tom Werner.  “Our Gen 4 platform will be delivered via our highly efficient 200mm wafers, which will enable us to deliver products on a scale and level of yield not seen in this industry before.”

    Wolfspeed’s Gen 4 platform was designed to comprehensively improve system efficiency and prolong application life, even in harshest of environments, while helping to reduce system cost and development time.  The technology will deliver significant performance enhancements for designers of high-power automotive, industrial, and renewable energy systems, with key benefits including:

    • Holistic System Efficiency: Delivering up to a 21% reduction in on-resistance at operating temperatures with up to 15% lower switching losses.
    • Durability: Ensuring reliable performance, including a short-circuit withstand time of up to 2.3 µS to provide additional safety margin.
    • Lower System Cost: Streamlining design processes to reduce system costs and development time.

    Learn more in Wolfspeed’s white paper “Gen 4 Silicon Carbide Technology: Redefining Performance and Durability in High-Power Applications”.

    Wolfspeed’s Gen 4 products are available in 750V, 1200V and 2300V nodes, with options for power modulesdiscrete components, and bare die products.  New product introductions, including additional footprints and RDSON ranges, will be available throughout 2025 and early 2026.

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  • onsemi Acquires SiC JFET Business from Qorvo to Boost Energy Efficiency in AI, EV, and Industrial Applications

    onsemi Acquires SiC JFET Business from Qorvo to Boost Energy Efficiency in AI, EV, and Industrial Applications

    1 Min Read

    onsemi announced that it has completed its acquisition of the Silicon Carbide Junction Field-Effect Transistor (SiC JFET) technology business, including the United Silicon Carbide subsidiary, from Qorvo for $115 million in cash.

    The addition of SiC JFET technology will complement onsemi’s extensive EliteSiC power portfolio and enable the company to address the need for high energy efficiency and power density in the AC-DC stage in power supply units for AI data centers.

    In electric vehicle applications, SiC JFETs help improve efficiency and safety by replacing multiple components with a solid-state switch based on SiC JFET in battery disconnect units. In the industrial end-market, SiC JFETs enable certain energy storage topologies and solid-state circuit breakers.

    “This acquisition further strengthens onsemi’s leadership in power semiconductors by providing disruptive and market leading technologies to our customers to solve their most pressing power density and efficiency problems in AI data centers, automotive and industrial markets,” said Simon Keeton, group president and general manager of the Power Solutions Group, onsemi. “We will continue to innovate and make investments to expand our technology leadership in providing the most comprehensive power system solutions.”

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  • NXP Secures €1 Billion EIB Loan to Drive Semiconductor Innovation and Sustainability in Europe

    NXP Secures €1 Billion EIB Loan to Drive Semiconductor Innovation and Sustainability in Europe

    3 Min Read

    NXP Semiconductors N.V. announced that it has secured a €1 billion loan from the European Investment Bank (EIB) to advance the company’s RDI investments across its broad portfolio of semiconductor solutions. The €1 billion loan facility carries an approximate interest rate of 4.75 percent when drawn in dollar denominated tranches, under the current market conditions and has a duration of six years. The financing will support NXP’s research and development efforts in several EU Member States, implemented in its facilities in Austria, France, Germany, the Netherlands and Romania for the period up to 2026.

    The financing of critical European technology aligns with the EIB’s launch of a targeted “Strategic Tech-EU ” investment programme to accelerate digitalisation and innovation in strategic technologies, such as artificial intelligence, microchips, life sciences and quantum computing. Semiconductors are the fundamental building blocks critical to the digitalisation of many different industries, making them instrumental in public and private efforts to advance decarbonisation and sustainability efforts.

    “It is fundamental for Europe to remain an indispensable player in the value chain of critical technologies and build RDI and production capacity in those supply chains. Luckily, the EU boasts some of the world’s most advanced chip makers. As semiconductors are key to the digital and green transitions, their importance will only grow, and the EIB proudly supports such strategic technology.”Robert de Groot, EIB Vice President

    NXP research and development teams across Europe are focused on creating the next generation of automotive processors, advanced automotive radar solutions, improved energy and driver systems, in-vehicle networking, and secure car access, in addition to other equally important intelligent edge technologies such as artificial intelligence (AI), secure edge identification, Near Field Communication (NFC) wallets for mobile phones and smart wearables, and other devices which improve quality of life and further sustainability efforts.

    “NXP is committed to strengthening Europe’s semiconductor ecosystem, and this significant loan from EIB aims at bolstering NXP’s efforts in research and development across many of our EU sites. NXP’s collaboration with the EIB underscores our commitment to ensuring European technology leadership and sustainability in the global semiconductor market. This loan complements the various existing instruments supporting our industry, such as the Important Projects of Common European Interest (IPCEI) and other initiatives currently being set up by the European Commission and the Member States. It is also consistent with our investment in the ESMC joint venture fab currently being built in Germany, which will address Europe’s automotive and industrial chip requirements.”Maarten Dirkzwager, Executive Vice President and Chief Strategy Officer, NXP Semiconductors

    The investment will contribute to building a state-of-the-art European chip ecosystem, in-line with the EU Chips Act, the Dutch Semicon Valley and the National Technology Strategy of the Netherlands’ Government, whose scope is to strengthen the semiconductor market in the EU to ensure a secure and competitive supply of chips. Apart from the pure research and development of new power electronics devices, microprocessors and microcontrollers, NXP will also focus on the energy efficiency of its devices.

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