• onsemi to Establish a Vertically Integrated SiC Manufacturing Facility in Czech Republic

    onsemi to Establish a Vertically Integrated SiC Manufacturing Facility in Czech Republic

    3 Min Read

    Electrification, renewables and artificial intelligence are global megatrends converging and driving unprecedented demands for advanced power semiconductors capable of optimizing energy conversion and management. In a strategic move toward addressing these demands, onsemi announced plans to establish a state-of-the-art, vertically integrated silicon carbide (SiC) manufacturing facility in the Czech Republic. The site would produce the company’s intelligent power semiconductors that are essential for improving the energy efficiency of applications in electric vehicles, renewable energy and AI data centers. 

    “Our brownfield investment would establish a Central European supply chain to better service our customers’ rapidly increasing demand for innovative technologies that improve the energy efficiency in their applications,” said Hassane El-Khoury, president and CEO, onsemi. “Through a close collaboration with the Czech government, the expansion would also enhance our production of intelligent power semiconductors that are essential to helping ensure the European Union is able to achieve its ambitions to significantly reduce carbon emissions and environmental impact.”  

    “onsemi’s decision to expand in Czechia is a clear confirmation of our country’s attractiveness for foreign investment and will bring significant momentum for the development of our economy,” said Mr. Jozef Síkela, Minister of Industry and Trade of the Czech Republic. “This investment not only strengthens our position in the semiconductor field but can also contribute to the development of the automotive industry and help us with its adaptation to the rise of electromobility.” 

    onsemi’s plan to expand SiC manufacturing with a multi-year brownfield investment of up to $2 billion (44 billion CZK) is part of the company’s previously disclosed long-term capital expenditure target. This investment would build on the company’s current operations in the Czech Republic, which include silicon crystal growth, silicon and silicon carbide wafer manufacturing (polished and EPI) and a silicon wafer fab. Today, the site can produce more than three million wafers annually, including more than one billion power devices. Upon completion, the operation would contribute annually more than $270 million USD (6 billion CZK) to the country’s GDP.   

    Pending all final regulatory and incentive approvals, including the investment incentive approval by the government of the Czech Republic and its notification to the European Commission, this would be one of the largest private sector investments in the Czech Republic’s history and would further contribute to the prosperity and economic dynamism of the Zlín region. onsemi is one of the first companies to invest in advanced semiconductor manufacturing in the Central European region.

    With this investment, the company would contribute to the strategic positioning of the region within the EU’s semiconductor value chain and demonstrate that all EU countries can benefit from the European Chips Act. The announcement also reflects onsemi’s strategic alignment with the overarching goals of the European Chips Act of increasing market share and technological advancement to strengthen the resilience of the EU’s semiconductor supply chains in times of ever-growing demand.   

    Silicon carbide is a critical material for high-power, high-temperature applications, and is extremely difficult to produce. onsemi is one of the only companies in the world with the ability to manufacture SiC-based semiconductors from crystal growth to advanced packaging solutions. By expanding its production facilities in the Czech Republic, onsemi would be faster to provide supply assurance for customers, strengthening its leadership in intelligent power solutions. This integration would also enable onsemi to leverage its latest advancements in research and development (R&D) to maximize manufacturing and production efficiency.

    Original – onsemi

    Comments Off on onsemi to Establish a Vertically Integrated SiC Manufacturing Facility in Czech Republic
  • Leapers Semiconductor Unveiled New LPS-Pack Series SiC Power Modules

    Leapers Semiconductor Unveiled New LPS-Pack Series SiC Power Modules

    2 Min Read

    At PCIM Europe 2024 Leapers Semiconductor unveiled the next-generation molded half-bridge SiC modules for main drive applications (LPS-Pack series). This new series was specifically developed to meet the unique requirements of a renowned international automotive manufacturer.

    Key Advantages of the New Module:

    • Innovative Design Concept: Utilizing Pressfit Pin technology for signal and current transmission, the design achieves SiC on PCB, allowing current to pass directly through the PCB. This significantly reduces the parasitic inductance of the module and system, minimizes the controller’s size, and lowers the cost of the controller’s busbar and capacitors.
    • Advanced Molding Process: The new molding process allows the module’s Tjmax to reach 200℃.
    • Unique Module Design: Ensures substrate flatness, facilitating large-area sintering between the module and the heatsink. This reduces the system’s thermal resistance and enhances yield control processes.
    • High Power Density: A single module (area < 26cm²) achieves a maximum current output of over 300 Arms. The system design is extremely compact and cost-effective.
    • Versatile Application: Suitable for platform-based and modular development applications. The series currently covers 300-600 Arms, addressing various power requirements for different customer applications.
    • Mass Production Ready: Offers superior product consistency and yield, making it more competitive than similar half-bridge modules.

    The LPS-Pack series’ distinctive design and unique advantages set it apart from other molded solutions.

    Original – Leapers Semiconductor

    Comments Off on Leapers Semiconductor Unveiled New LPS-Pack Series SiC Power Modules
  • ROHM Introduced TRCDRIVE pack™ Series with 2-in-1 SiC Molded Modules

    ROHM Introduced TRCDRIVE pack™ Series with 2-in-1 SiC Molded Modules

    2 Min Read

    ROHM has developed four models as part of the TRCDRIVE pack™ series with 2-in-1 SiC molded modules (two of 750V-rated: BSTxxxD08P4A1x4, two of 1,200V-rated: BSTxxxD12P4A1x1) optimized for xEV (electric vehicles) traction inverters. TRCDRIVE pack™ supports up to 300kW and features high power density and a unique terminal configuration – help solving the key challenges of traction inverters in terms of miniaturization, higher efficiency, and fewer person-hours.

    As the electrification of cars rapidly advances towards achieving a decarbonized society, the development of electric powertrain systems that are more efficient, compact, and lightweight is currently progressing. However, for SiC power devices that are attracting attention as key components, achieving low loss in a small size has been a difficult challenge. ROHM solves these issues inside powertrains with its TRCDRIVE pack™.

    A trademark brand for ROHM SiC molded type modules developed specifically for traction inverter drive applications, TRCDRIVE pack™ reduces size by utilizing a unique structure that maximizes heat dissipation area. On top, ROHM’s 4th Generation SiC MOSFETs with low ON resistance are built in – resulting in an industry-leading power density 1.5 times higher than that of general SiC molded modules while greatly contributing to the miniaturization of inverters for xEVs.

    The modules are also equipped with control signal terminals using press fit pins enabling easy connection by simply pushing the gate driver board from the top, reducing installation time considerably. In addition, low inductance (5.7nH) is achieved by maximizing the current path and utilizing a two-layer bus-bar structure for the main wiring, contributing to lower losses during switching.

    TRCDRIVE pack™ is scheduled to be launched by March 2025 with a lineup of 12 models in different package sizes (Small / Large) and mounting patterns (TIM: heat dissipation sheet / Ag sinter). In addition, ROHM is developing a 6-in-1 product with built-in heat sink that is expected to facilitate rapid traction inverter design and model rollout tailored to a variety of design specifications.

    Original – ROHM

    Comments Off on ROHM Introduced TRCDRIVE pack™ Series with 2-in-1 SiC Molded Modules
  • Crystal IS Announced Production of 100 mm Single-Crystal Aluminum Nitride Substrates with 99% Usable Area

    Crystal IS Announced Production of 100 mm Single-Crystal Aluminum Nitride Substrates with 99% Usable Area

    2 Min Read

    Crystal IS, an Asahi Kasei company, announced production of 100 mm diameter single-crystal aluminum nitride (AlN) substrates with 99% usable area, based on current requirements for UVC LEDs. This improved quality is steadily approaching that of Crystal IS’ existing 2-inch substrates used in the production of its UVC LEDs. The ultra-wide bandgap and high thermal conductivity of AlN helps improve device reliability and performance in both UVC LEDs and other next generation RF and power devices.

    “The improvement of our large diameter substrate quality over the last nine months showcases the expertise of our team in aluminum nitride innovation,” said Eoin Connolly, President and CEO of Crystal IS. “The inherent benefits of aluminum nitride are unlocking new applications in RF and power devices—we are excited to work with our partners to further develop this material to meet their needs.”

    This achievement follows the company’s announcement of the first ever recorded 100 mm diameter in August 2023, which won an excellence award at Semiconductor of the Year in electronic materials for the Semiconductors Category. The Semiconductor of the Year Awards are organized by Electronic Device Industry News, an industry journal published in Tokyo by SangyoTimes Inc.

    Crystal IS manufactures bulk aluminum nitride substrates at its headquarters in Green Island, New York and began selling 2-inch diameter substrates for research and development in RF and power devices in late 2023. This 100 mm diameter milestone accelerates the development of new applications on aluminum nitride substrates as it integrates into existing fabrication lines for power and RF devices using alternative materials. The company plans to offer 100 mm diameter substrates manufactured in its US facility to key partners this year as they expand their focus beyond UVC LEDs.

    Original – Crystal IS

    Comments Off on Crystal IS Announced Production of 100 mm Single-Crystal Aluminum Nitride Substrates with 99% Usable Area
  • Siltronic Inaugurated One of the World’s Most Advanced Wafer Fabs

    Siltronic Inaugurated One of the World’s Most Advanced Wafer Fabs

    3 Min Read

    June 12 marked a milestone in the history of Siltronic AG: after more than 500 construction days and roughly 23 million working hours, Siltronic inaugurated one of the world’s most advanced wafer fabs. The inauguration of the new production facility, which is one of the most modern and cost-efficient of its kind, took place in Singapore.

    The highly automated fab at JTC’s Tampines Wafer Fab Park was officially opened in the presence of around 150 guests, including numerous high-ranking representatives of the Singaporean government, customers and suppliers. Singapore’s Deputy Prime Minister Heng Swee Keat was the Guest of Honour to grace the occasion. The fab was commissioned at the beginning of 2024 and will now be ramped to full capacity over several years.

    “With our new fab, we will accompany the future growth of the wafer industry for many years to come and take Siltronic to a new level. What the entire team, including all business partners, has achieved is a masterpiece, and I would like to thank everyone for their outstanding contribution,” said Dr. Michael Heckmeier, CEO of Siltronic AG, in his speech.

    Ms. Jacqueline Poh, Managing Director of Singapore Economic Board (EDB) said: “We are proud of our long-standing partnership with Siltronic. As one of top 5 global wafer suppliers, Siltronic’s new fab is a significant expansion that not only supplies to Singapore’s semiconductor industry but also strengthens the resilience of the global semiconductor supply chain. This investment will create good jobs and further grow the existing collaboration that Siltronic has with local suppliers in automation and precision components.”

    The success story of Siltronic in Singapore began in 1997 with the founding of Siltronic Singapore Pte. Ltd. in JTC’s Tampines Wafer Fab Park. The first 200 mm wafers were produced as early as 1999. This was followed in 2006 by the establishment of a joint venture with Samsung and the start of construction of the first 300 mm fab, from which the first wafers were delivered to customers in 2008. The foundation stone for the second 300 mm fab was laid in 2021, and it was officially opened today. Singapore is Siltronic’s largest production site.

    Today’s inauguration of the state-of-the-art wafer fab in Singapore is not only the largest investment in Siltronic’s history, but also a milestone of which Siltronic is extremely proud. With its high level of automation and impressive efficiency, the fab sets new standards in our industry and strengthens Siltronic’s position as one of the world’s leading wafer manufacturers.

    Original – Siltronic

    Comments Off on Siltronic Inaugurated One of the World’s Most Advanced Wafer Fabs
  • WeEn Semiconductors Introduced New SiC MOSFETs and SBDs in TSPAK Package

    WeEn Semiconductors Introduced New SiC MOSFETs and SBDs in TSPAK Package

    2 Min Read

    WeEn Semiconductors unveiled new families of silicon carbide (SiC) MOSFETs and Schottky Barrier Diodes (SBDs) in TSPAK packaging at this year’s PCIM Europe exhibition and conference. The company has also used the event to showcase for the first time a comprehensive range of integrated SiC power modules in Nuremberg, from June 11-13, 2024. 

    WeEn Semiconductor’s new TSPAK MOSFET and SBD devices address the demand for high-performance, compact and reliable power management in applications ranging from automotive charging and on-board charger applications to photovoltaic (PV) inverters and high-power-density power supplies (PSUs).

    Offering a variety of configuration options for maximum design flexibility, the company’s new SiC modules are ideal for applications such as EV charging, energy storage systems, PV inverters, motor drives, industrial PSUs and test instrumentation.

    Originally developed for automotive applications, TSPAK devices combine innovative top-side cooling capability with low thermal impedance to deliver enhanced thermal performance. By removing the PCB thermal resistance from the thermal dissipating path, the Junction-Ambient thermal resistance improves by 16-19%.

    This supports high reliability by enabling a greater number of power cycles than conventional packaging as well as providing the increased power densities demanded by compact system designs. Low circuit inductance and low EMC noise help to improve performance and reduce filtering requirements. The WeEn Semiconductors family of TSPAK MOSFETs features 650V, 750V, and 1200V options with resistances ranging from 12mΩ to 150mΩ. TSPAK SBDs are available with current ratings of 10 to 40A in 650V, 750V, and 1200V variants.

    Visitors to WeEn’s stand in Hall 9, booth 538, will have the first opportunity to explore the company’s extensive range of SiC power modules. With a wide range of topology options, including half-bridge, four-pack, six-pack, and MPPT booster configurations, the power modules support voltages ranging from 650V to 1200V. Depending on the option chosen and special designs, modules incorporate a variety of advanced features including synchronized chip current sharing, integrated temperature sensors, topside cooling structures and the latest clip-bond technologies.

    Original – WeEn Semiconductors

    Comments Off on WeEn Semiconductors Introduced New SiC MOSFETs and SBDs in TSPAK Package
  • Qorvo® Announced Industry's First 4 mOhm SiC JFET in TOLL Package

    Qorvo® Announced Industry’s First 4 mOhm SiC JFET in TOLL Package

    2 Min Read

    Qorvo® announced the industry’s first 4 milliohm silicon carbide (SiC) junction field effect transistor (JFET) in a TOLL package. It was designed for circuit protection applications including solid-state circuit breakers, where low resistance, superior thermal performance, small size and reliability are paramount. 

    With RDS(on) of just 4 milliohm, the UJ4N075004L8S offers the industry’s lowest on-resistance among the 650V to 750V class of power devices in standard discrete packages. This low RDS(on) drives significant reductions in heat generation and, when coupled with a compact TOLL package, enables a solution size that is 40% smaller than competing devices in TO-263 packages.

    This small solution size supports the space-limited dimensions of today’s electromechanical circuit breakers and operates without the need for elaborate cooling systems, accelerating the transition from electromechanical circuit breakers to semiconductor-based solid-state circuit breakers (SSCBs).

    “With the introduction of the UJ4N075004L8S, Qorvo continues to lead the way in SiC power innovation, catalyzing the emergence of applications such as circuit protection with ultra-low RDS(on) FET offerings in very small footprints,” said Ramanan Natarajan, director of product line marketing for Qorvo’s SiC Power Products business. “The SSCB market is growing rapidly, and Qorvo’s newest product marks a significant milestone in the evolution of the technology.”

    Qorvo’s JFETs are highly robust devices well suited to meet the challenges of circuit protection, providing the ability to turn off at very high inrush currents during circuit faults. Qorvo’s newest JFET can also withstand high instantaneous junction temperatures without experiencing degradation or parametric drift. The normally-on nature of the JFET lends itself to seamless integration into systems where the switch is in the on-state by default and in turn-off state under fault conditions.

    The UJ4N075004L8S is now available for sampling and will enter full production in Q4 2024, accompanied by additional JFET options, including 750V with 5 milliohm and 1200V with 8 milliohm ratings, all in TO-247 packaging. For more details about this transformative power technology and detailed product specifications, please visit UJ4N075004L8S.

    Original – Qorvo

    Comments Off on Qorvo® Announced Industry’s First 4 mOhm SiC JFET in TOLL Package
  • Texas Instruments Introduced Industry's First 650V Three-Phase GaN IPM

    Texas Instruments Introduced Industry’s First 650V Three-Phase GaN IPM

    3 Min Read

    Texas Instruments introduced the industry’s first 650V three-phase GaN IPM for 250W motor drive applications. The new GaN IPM addresses many of the design and performance compromises engineers typically face when designing major home appliances and heating, ventilation and air-conditioning (HVAC) systems.

    The DRV7308 GaN IPM enables more than 99% inverter efficiency, optimized acoustic performance, reduced solution size and lower system costs. It is on display at the Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM) Conference, held June 11-13 in Nuremberg, Germany.

    “Designers of high-voltage home appliances and HVAC systems are striving to meet higher energy-efficiency standards to support environmental sustainability goals around the world,” said Nicole Navinsky, Motor Drives business unit manager at TI. “They are also addressing consumer demand for systems that are reliable, quiet and compact. With TI’s new GaN IPM, engineers can design motor driver systems that deliver all of these expectations and operates at peak efficiency.”

    Improve system efficiency and reliability with TI GaN

    Worldwide efficiency standards for appliances and HVAC systems such as SEER, MEPS, Energy Star and Top Runner are becoming increasingly stringent. The DRV7308 helps engineers meet these standards, leveraging GaN technology to deliver more than 99% efficiency and improve thermal performance, with 50% reduced power losses compared to existing solutions.

    In addition, the DRV7308 achieves industry-low dead time and low propagation delay, both less than 200ns, enabling higher pulse-width modulation (PWM) switching frequencies that reduce audible noise and system vibration. These advantages plus the higher power efficiency and integrated features of the DRV7308 also reduce motor heating, which can improve reliability and extend the lifetime of the system.

    To learn more about the benefits of GaN technology, read the white paper, “How three-phase integrated GaN technology maximizes motor-drive performance.”

    Advanced integration and high power density reduce solution size and costs

    Supporting the trend of more compact home appliances, the DRV7308 helps engineers develop smaller motor drive systems. Enabled by GaN technology, the new IPM delivers high power density in a 12mm-by-12mm package, making it the industry’s smallest IPM for 150W to 250W motor-drive applications.

    Because of its high efficiency, the DRV7308 eliminates the need for an external heatsink, resulting in motor drive inverter printed circuit board (PCB) size reduction of up to 55% compared to competing IPM solutions. The integration of a current sense amplifier, protection features and inverter stage further reduces solution size and cost.

    To learn about designing more efficient, compact motor systems, see the GaN IPM page on TI.com.

    This high-efficiency, high-voltage GaN IPM is the latest example of TI innovations to help solve engineering challenges and transform motor designs.

    TI’s reliable high-voltage technology at PCIM 2024

    Visitors to PCIM can see new products and solutions from TI that are enabling the transition to a more sustainable future with reliable high-voltage technology in Hall 7, Booth 652. In addition to the DRV7308 GaN IPM, TI highlights at PCIM include:

    • Next-generation electric vehicle (EV) propulsion system: TI is demonstrating a new 800V, 750kW SiC-based scalable traction inverter system for EV six-phase motors, in collaboration with EMPEL Systems. The demonstration features high power density and efficiency using TI’s high-performance isolated gate drivers, isolated DC/DC power modules and Arm® Cortex®-R MCUs.
    • TI’s manager of high-voltage power systems applications, Sheng-Yang Yu, will speak on June 11 in the Markt & Technik panel discussion: “Will SiC ultimately Hold its Own against GaN?”
    • TI’s manager of renewable energy systems, Harald Parzhuber, will speak on June 12 in Bodo’s Power Systems panel discussion: “GaN Wide Bandgap Design, the Future of Power.”

    Original – Texas Instruments

    Comments Off on Texas Instruments Introduced Industry’s First 650V Three-Phase GaN IPM
  • Infineon Technologies Pioneering in Semiconductor Industry with Comprehensive Product Carbon Footprint Data

    Infineon Technologies Pioneering in Semiconductor Industry with Comprehensive Product Carbon Footprint Data

    3 Min Read

    Infineon Technologies AG will provide customers with comprehensive Product Carbon Footprint (PCF) data, taking a pioneering role in the semiconductor industry. The company is committed to eventually providing PCF data for its entire product portfolio, starting now with about half of its portfolio.

    The initiative will empower customers to advance their own sustainability goals and reduce their carbon footprint effectively along the entire supply chain. The Product Carbon Footprint is a metric that quantifies the greenhouse gas emissions associated with an individual product, allowing the comparison of different products’ climate impact. Infineon will share more insights with customers at the upcoming PCIM trade fair in Nuremberg, Germany, from 11 to 13 June 2024.  

    “By providing comprehensive Product Carbon Footprint data, we are driving the vision of a net-zero society and empowering our customers to reduce carbon emissions even more effectively,” says Elke Reichart, Member of the Management Board and Chief Digital and Sustainability Officer at Infineon. “Infineon is taking a leading role in carbon transparency by committing to include the entire product portfolio over the coming years. This underlines our ambition to be a leader not only in terms of technology, but also sustainability.”

    The specific data Infineon provides on its individual products is essential for the growing number of customers who want to increase transparency on their own carbon footprint. Moreover, it supports informed decision making to leverage additional potential for reducing emissions along the value chain.

    In the absence of established industry standards, Infineon has developed a robust methodology to calculate the Product Carbon Footprint, incorporating customer needs and best practices. Infineon includes emissions from raw materials and supplies, its own manufacturing processes, manufacturing partners and transportation to the customer (“from cradle to gate”).

    This means that the Product Carbon Footprint reported by Infineon covers scope 1 and 2 emissions as well as scope 3 emissions from suppliers and manufacturing partners, all the way to the customer’s gate. The Product Carbon Footprint is expressed in kilograms of carbon dioxide equivalent (kg CO 2e).

    Infineon has published the assessment of reference product families on the Infineon website.

    Driving transparency goes hand in hand with Infineon’s strong commitment to decarbonization and digitalization. Infineon’s products make a major contribution to the global energy transition and thus to a net-zero society. They are used in solar and wind power plants, electric cars and increase energy efficiency in numerous applications, including AI data centers. Over their lifetime, the company’s chips overall save 34 times the amount of CO 2e emitted during their production.

    Breaking the carbon footprint down to the product level is another major milestone in Infineon’s sustainability journey. Infineon has already pledged to achieve carbon neutrality by 2030 for direct and indirect emissions (scope 1 and 2). Last year, the company additionally committed to setting a science-based target encompassing supply chain emissions (scope 3) as well.

    Original – Infineon Technologies

    Comments Off on Infineon Technologies Pioneering in Semiconductor Industry with Comprehensive Product Carbon Footprint Data
  • Mitsubishi Electric Added Two New SBD-embedded SiC-MOSFET Power Modules

    Mitsubishi Electric Added Two New SBD-embedded SiC-MOSFET Power Modules

    1 Min Read

    Mitsubishi Electric Corporation has begun shipping low-current 3.3kV/400A and 3.3kV/200A versions of a Schottky barrier diode (SBD) embedded silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) module for large industrial equipment, including rolling stock and electric power systems, from today, June 10.

    Together with the existing 3.3kV/800A version, the newly named UnifullTM series comprises three modules to meet the growing demand for inverters capable of increasing power output and power conversion efficiency in large industrial equipment. The new modules will be exhibited at major trade shows, including Power Conversion Intelligent Motion (PCIM) Europe 2024 in Nuremberg, Germany from June 11 to 13.

    Mitsubishi Electric’s SBD-embedded SiC-MOSFET modules, including the 3.3kV/800A version released on March 29, feature an optimized package structure to reduce switching loss and improve SiC performance. Compared to existing power modules, UnifullTM modules, significantly reduce switching loss and contribute to higher power output and efficiency in large industrial equipment, making them suitable for auxiliary power supplies in railcars and drive systems with relatively small capacities.

    Original – Mitsubishi Electric

    Comments Off on Mitsubishi Electric Added Two New SBD-embedded SiC-MOSFET Power Modules