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As the demand for gallium nitride (GaN) semiconductors continues to grow, Infineon Technologies AG is poised to capitalize on this trend and solidify its position as a leading Integrated Device Manufacturer (IDM) in the GaN market. Today, the company announced that its scalable GaN manufacturing on 300-millimeter wafers is on track. With first samples available for customers as of the fourth quarter of 2025, Infineon is well-positioned to expand its customer base and reinforce its position as a leading GaN powerhouse.
As a leader in power systems, Infineon is mastering all three relevant materials: silicon (Si), silicon carbide (SiC) and gallium nitride. With higher power density, faster switching speeds, and lower power losses, GaN semiconductors enable smaller designs, reducing energy consumption and heat generation in electronic devices like smartphone chargers, industrial and humanoid robots or solar inverters.
“Our fully scaled-up 300-millimeter GaN manufacturing will allow us to deliver highest value to our customers even faster while moving towards cost parity for comparable silicon and GaN products,” said Johannes Schoiswohl, Head of GaN Business Line at Infineon. “Almost a year after the announcement of Infineon’s breakthrough in 300-millimeter GaN wafer technology, we are pleased that our transition process is well on track and that the industry has recognized the importance of Infineon’s GaN technology enabled by the strength of our IDM strategy.”
Infineon’s manufacturing strategy primarily relies on an IDM model – owning the entire semiconductor production process, from design to manufacturing and selling the final product. The company’s in-house manufacturing strategy is a key differentiator in the market providing several advantages such as high-quality, faster time-to-market as well as superior design and development flexibility. Infineon is committed to supporting its GaN customers and can scale capacity to meet their needs for reliable GaN power solutions.
Building on its technology leadership, Infineon has become the first semiconductor manufacturer to successfully develop 300-millimeter GaN power wafer technology within its existing high-volume manufacturing infrastructure. Chip production on 300-millimeter wafers is technically more advanced and significantly more efficient compared to established 200-millimeter wafers, as the larger wafer diameter allows 2.3 times more chips to be produced per wafer. These increased capabilities combined with Infineon’s large team of GaN experts and the industry’s broadest IP portfolio are needed as GaN power semiconductors are being rapidly adopted in industrial, automotive, consumer, and computing & communication applications, such as power supplies for AI systems, solar inverters, chargers and adapters or motor control systems.
Original – Infineon Technologies
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Navitas Semiconductor announced a strategic partnership with Powerchip Semiconductor Manufacturing Corporation (PSMC or Powerchip), to start production and continue development of best-in-class 200mm GaN-on-silicon technology.
Navitas’ GaN IC portfolio is expected to use Powerchip’s 200mm in Fab 8B, located in Zhunan Science Park, Taiwan. The fab has been operational since 2019 and supports various high-volume manufacturing processes for GaN, ranging from micro-LEDs to RF GaN devices.
Powerchip’s capabilities include an improved 180nm CMOS process, offering smaller and more advanced geometries, which bring improvements in performance, power efficiency, integration, and cost. “200mm GaN-on-silicon production on a 180nm process node enables us to continue innovating higher power density, faster, and more efficient devices while simultaneously improving cost, scale, and manufacturing yields”, said Dr. Sid Sundaresan, SVP of WBG Technology Platforms at Navitas.
Powerchip is expected to manufacture Navitas’ GaN portfolio with voltage ratings from 100V to 650V, supporting the growing demand for GaN for 48V infrastructure, including hyper-scale AI data centers and EVs. Qualification of initial devices is expected in Q4 2025. The 100V family is expected to start production first at Powerchip in 1H26, while the company expects 650V devices will transition from Navitas’ existing supplier, TSMC, to Powerchip over the next 12-24 months.
Navitas recently made several announcements in the AI data center, EV, and solar markets, including its collaboration with NVIDIA to support GaN and SiC technologies for 800V HVDC architectures for 1 MW IT racks and beyond. Enphase announced that its next-generation IQ9 would include Navitas’ 650 V bi-directional GaNFast ICs, and Changan Automobile announced its first commercial GaN-based OBC (on-board charger) using Navitas’ GaNSafe technology.
“We are proud to partner with Powerchip to advance high-volume 200 mm GaN-on-silicon production and look forward to driving continued innovation together in the years ahead”, said Gene Sheridan, CEO and co-founder of Navitas. “Through our partnership with Powerchip, we are well-positioned to drive sustained progress in product performance, technological evolution, and cost efficiency.”
“Powerchip has collaborated with Navitas on GaN-on-Si technology for years, and we’re thrilled to announce that product qualification is nearly complete – bringing us to the verge of mass production”, said Martin Chu, President at Powerchip. “Building on this strong partnership, Powerchip is committed to expanding our cooperation and continuously supporting Navitas in exploring and growing the GaN market.”
Original – Navitas Semiconductor
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Renesas Electronics Corporation introduced three new high-voltage 650V GaN FETs for AI data centers and server power supply systems including the new 800V HVDC architecture, E-mobility charging, UPS battery backup devices, battery energy storage and solar inverters.
Designed for multi-kilowatt-class applications, these 4th-generation plus (Gen IV Plus) devices combine high-efficiency GaN technology with a silicon-compatible gate drive input, significantly reducing switching power loss while retaining the operating simplicity of silicon FETs. Offered in TOLT, TO-247 and TOLL package options, the devices give engineers the flexibility to customize their thermal management and board design for specific power architectures.
The new TP65H030G4PRS, TP65H030G4PWS and TP65H030G4PQS devices leverage the robust SuperGaN® platform, a field-proven depletion mode (d-mode) normally-off architecture pioneered by Transphorm, which was acquired by Renesas in June 2024. Based on low-loss d-mode technology, the devices offer superior efficiency over silicon, silicon carbide (SiC), and other GaN offerings. Moreover, they minimize power loss with lower gate charge, output capacitance, crossover loss, and dynamic resistance impact, with a higher 4V threshold voltage, which is not achievable with today’s enhancement mode (e-mode) GaN devices.
Built on a die that is 14 percent smaller than the previous Gen IV platform, the new Gen IV Plus products achieve a lower RDS(on) of 30 milliohms (mΩ), reducing on-resistance by 14 percent and delivering a 20 percent improvement in on-resistance output-capacitance-product figure of merit (FOM). The smaller die size reduces system costs and lowers output capacitance, which results in higher efficiency and power density. These advantages make the Gen IV Plus devices ideal for cost-conscious, thermally demanding applications where high performance, efficiency and small footprint are critical. They are fully compatible with existing designs for easy upgrades, while preserving existing engineering investments.
Available in compact TOLT, TO-247 and TOLL packages, they provide one of the broadest packaging options to accommodate thermal performance and layout optimization for power systems ranging from 1kW to 10kW, and even higher with paralleling. The new surface-mount packages include bottom side (TOLL) and top-side (TOLT) thermal conduction paths for cooler case temperatures, allowing easier device paralleling when higher conduction currents are needed. Further, the commonly used TO-247 package provides customers with higher thermal capability to achieve higher power.
“The rollout of Gen IV Plus GaN devices marks the first major new product milestone since Renesas’ acquisition of Transphorm last year,” said Primit Parikh, Vice President of the GaN Business Division at Renesas. “Future versions will combine the field-proven SuperGaN technology with our drivers and controllers to deliver complete power solutions. Whether used as standalone FETs or integrated into complete system solution designs with Renesas controllers or drivers, these devices will provide a clear path to designing products with higher power density, reduced footprint and better efficiency at a lower total system cost.”
Like previous d-mode GaN products, the new Renesas devices use an integrated low-voltage silicon MOSFET – a unique configuration that achieves seamless normally-off operation while fully capturing the low loss, high efficiency switching benefits of the high- voltage GaN. As they use silicon FETs for the input stage, the SuperGaN FETs are easy to drive with standard off-the-shelf gate drivers rather than specialized drivers that are normally required for e-mode GaN. This compatibility simplifies design and lowers the barrier to GaN adaptation for system developers.
GaN-based switching devices are quickly growing as key technologies for next-generation power semiconductors, fueled by demand from electric vehicles (EVs), inverters, AI data center servers, renewable energy, and industrial power conversion. Compared to SiC and silicon-based semiconductor switching devices, they provide superior efficiency, higher switching frequency and smaller footprints.
Renesas is uniquely positioned in the GaN market with its comprehensive solutions, offering both high- and low-power GaN FETs, unlike many providers whose success in the field has been primarily limited to lower power devices. This diverse portfolio enables Renesas to serve a broader range of applications and customer needs. To date, Renesas has shipped over 20 million GaN devices for high- and low-power applications, representing more than 300 billion hours of field usage.
The TP65H030G4PRS, TP65H030G4PWS and TP65H030G4PQS are available today, along with the 4.2kW Totem-pole PFC GaN Evaluation Platform (RTDTTP4200W066A-KIT). More information about Renesas’ GaN solutions is available at: renesas.com/gan-fets.
Original – Renesas Electronics
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Okmetic has successfully produced the first wafers from its new Vantaa fab expansion in Finland. Okmetic Vantaa fab focuses on 150-200 mm silicon and bonded silicon-on-insulator (SOI) wafers with large fab expansion adding 200 mm polished wafer capacity significantly.
The completion of the first phase of what will ultimately be 400 million euro expansion, the largest investment in company history, is a significant milestone coinciding with Okmetic’s 40th anniversary. With the first wafers successfully produced, the company is now preparing for sample deliveries to customers, marking the next step in ramping up production.
Vantaa site Fab expansion is set to more than double Okmetic capacity by 2030. The construction of the expansion began in early 2023. Spanning over 40,000 m², the expansion includes a 6,000 m² cleanroom area along with crystal growth and wafering areas. The fab expansion is equipped with state-of-the-art technology, with focus on energy efficiency.
Building on previous investments, Okmetic has significantly expanded its manufacturing capabilities in recent years, including doubling bonded SOI production capacity between 2017 and 2021 and adding a patterning line for Cavity SOI (C-SOI®) production in 2019.
This latest expansion further strengthens Okmetic’s ability to meet growing semiconductor industry demands. By significantly increasing 200 mm polished wafer capacity, it reinforces Okmetic’s position as a leading supplier of advanced silicon wafers based in Europe, ensuring a stable and high-quality supply of 150–200 mm wafers.
Original – Okmetic
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Renesas Electronics Corporation announced that it has entered into a Restructuring Support Agreement with Wolfspeed, Inc. and its principal creditors for the financial restructuring of Wolfspeed. As a result, Renesas expects to record a loss as described below.
1. Details of Loss
As announced in July 2023, Renesas entered into the silicon carbide wafer supply agreement with Wolfspeed, and through Renesas’ wholly owned subsidiary in the United States, it provided a deposit (the “Deposit”) of US$2 billion (approximately 292.0 billion yen) to Wolfspeed. In October 2024, Renesas and Wolfspeed amended their agreement and increased the outstanding principal amount of the Deposit to US$2.062 billion (approximately 301.1 billion yen).
Subsequently, Wolfspeed has experienced financial challenges. On May 8, 2025, during its quarterly earnings call, Wolfspeed disclosed that to achieve its stated goal of strengthening its balance sheet, it may implement a transaction through an in-court solution. Due to Wolfspeed’s contemplation of an in-court option, Wolfspeed included required going concern language in the footnotes to its financial statements for the quarterly period ended March 30, 2025.
In response to this situation, Renesas has been engaging in discussions with Wolfspeed and today entered into the Restructuring Support Agreement among Wolfspeed and its principal creditors, pursuant to which Renesas agreed to, among other things, convert the Deposit of US$2.062 billion into convertible notes, common stock, and warrants issued by Wolfspeed as follows (the “Restructuring”).
(i) Wolfspeed convertible notes: US$204 million (approximately 29.8 billion yen) in aggregate principal amount, convertible to Wolfspeed common stock, maturing in June 2031. These notes are convertible into 13.6% of Wolfspeed’s total issued shares on a non-diluted basis at the time of the completion of the Restructuring. On a fully diluted basis, and prior to the exercise of the warrants to be granted to Renesas, this corresponds to 11.8%.
(ii) Wolfspeed common stock: equivalent to 38.7% (17.9% on a fully diluted basis, prior to Renesas warrants exercise) of the total number of issued shares of Wolfspeed at the completion of the Restructuring.
(iii) Wolfspeed warrants: equivalent to 5% (on a fully diluted basis) of the total number of issued shares of Wolfspeed at the completion of the Restructuring.
The Restructuring is expected to be consummated through proceedings under Chapter 11 of the U.S. Bankruptcy Code. It is expected that Wolfspeed will file a petition with the court to initiate such proceedings in the near future. The Restructuring is expected to become effective by the end of September 2025, subject to court approval of the restructuring plan. If the necessary regulatory approvals have not been obtained by the time the Restructuring takes effect, Renesas will hold rights to instruments with equivalent economic value to Wolfspeed’s convertible notes, common stock, and warrants until those approvals are received.
In connection with the signing of the Restructuring Support Agreement, Renesas expects to record a loss on the deposited receivables related to the Deposit in its consolidated financial statements. Although the timing and amount of such loss have not been determined at this time, Renesas believes that there is a possibility of recording a loss of approximately 250 billion yen (converted at an average exchange rate of 150 yen to the dollar during the period) in the consolidated financial statements for the six months ending June 30, 2025. Please note that this amount is an estimate calculated by Renesas’ internal analysis based on the currently available information and may increase or decrease due to various factors. The definitive timing and amount of the loss to be recorded will be determined in consultation with Renesas’ auditor and will be announced once it is determined.
2. Future Outlook
Renesas discloses revenue, gross margin, and operating margin on a “Non-GAAP” basis and does not disclose a forecast for profit attributable to owners of parent. Therefore, there is no change to the forecast for the six months ending June 30, 2025, announced on April 24, 2025.
Original – Renesas Electronics
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Wolfspeed, Inc. announced that, as part of its efforts to proactively strengthen its capital structure, it entered into a Restructuring Support Agreement (the “RSA”) with key lenders, including (i) holders of more than 97% of its senior secured notes, (ii) Renesas Electronics Corporation’s wholly owned U.S. subsidiary and (iii) convertible debtholders holding more than 67% of the outstanding convertible notes. The transactions envisioned by the RSA are expected to reduce the Company’s overall debt by approximately 70%, representing a reduction of approximately $4.6 billion, and reduce the Company’s annual total cash interest payments by approximately 60%.
By taking this proactive step, the Company expects to be better positioned to execute on its long-term growth strategy and accelerate its path to profitability. This marks the positive culmination of discussions between the Company and key lenders to restructure the Company’s capital structure on an expedited basis and help to ensure Wolfspeed maintains its position as a leader in the silicon carbide market.
“After evaluating potential options to strengthen our balance sheet and right-size our capital structure, we have decided to take this strategic step because we believe it will put Wolfspeed in the best position possible for the future,” said Robert Feurle, Wolfspeed’s Chief Executive Officer. “Wolfspeed has tremendous core strengths and great potential. We are a global leader in silicon carbide technology with an exceptional, purpose-built, fully automated 200mm manufacturing footprint, delivering cutting-edge products for our customers. A stronger financial foundation will enable us to focus acutely on innovation in rapidly scaling verticals undergoing electrification where quality, durability and efficiency matter most.”
Feurle continued, “As we move forward, we are grateful for the confidence and support of key lenders, who share our vision for the future and believe in our growth prospects. I also want to thank our incredibly talented team for their resilience and hard work, and our customers and partners for their ongoing support.”
Additional Information Regarding the RSA
Key terms of the RSA are as follows:
- Pursuant to the transactions contemplated by the RSA, the Company will receive $275 million of new financing in the form of second lien convertible notes, fully backstopped by certain of its existing convertible debtholders.
- The RSA contemplates a paydown of its senior secured notes of $250 million at a rate of 109.875%, with certain modifications to reduce go-forward cash interest and minimum liquidity requirements.
- The RSA also contemplates an exchange of $5.2 billion of existing convertible notes and Renesas’ existing loan for $500 million of new notes and 95% of the new common equity, subject to dilution from other equity issuances, with Renesas loan claims entitled to additional incremental consideration to the extent certain regulatory approvals are not obtained by an agreed upon deadline.
- Pursuant to the transactions, existing equity will be cancelled, and the existing equity holders will receive their pro rata share of 3% or 5% of new common equity, subject to dilution from other equity issuances and potential reduction from certain events.
- All other unsecured creditors are expected to be paid in the ordinary course of business.
To implement the transactions envisioned by the RSA, the Company intends to solicit approval of the pre- packaged plan of reorganization and then file voluntary petitions for reorganization under Chapter 11 of the U.S. Bankruptcy Code in the near future. Wolfspeed expects to move through this process expeditiously and emerge by the end of third quarter calendar year 2025.
Wolfspeed is continuing to operate and serve customers with leading silicon carbide materials and devices throughout the process. The Company plans to continue to pay vendors in the ordinary course of business for goods and services delivered throughout the restructuring process via an All-Trade Motion. Vendors are expected to be unimpaired in the process. Wolfspeed also intends to file customary motions with the Bankruptcy Court to support ordinary-course operations including, but not limited to, continuing employee compensation and benefits programs.
Additional details regarding the RSA will be provided in the Company’s Form 8-K to be filed with the U.S. Securities and Exchange Commission (the “SEC”). This press release does not constitute an offer to sell or purchase any securities, which would be made only pursuant to definitive documents and an applicable exemption from the Securities Act of 1933, as amended. This press release does not constitute a solicitation to vote on the bankruptcy plan.
For additional information regarding the restructuring, please visit Wolfspeed’s dedicated microsite at wolfspeedforward.com.
Original – Wolfspeed
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Texas Instruments announced its plans to invest more than $60 billion across seven U.S. semiconductor fabs, making this the largest investment in foundational semiconductor manufacturing in U.S. history. Working with the Trump administration and building on the company’s nearly 100-year legacy, TI is expanding its U.S. manufacturing capacity to supply the growing need for semiconductors that will advance critical innovations from vehicles to smartphones to data centers. Combined, TI’s new manufacturing mega-sites in Texas and Utah will support more than 60,000 U.S. jobs.
“TI is building dependable, low-cost 300mm capacity at scale to deliver the analog and embedded processing chips that are vital for nearly every type of electronic system,” said Haviv Ilan, president and CEO of Texas Instruments. “Leading U.S. companies such as Apple, Ford, Medtronic, NVIDIA and SpaceX rely on TI’s world-class technology and manufacturing expertise, and we are honored to work alongside them and the U.S. government to unleash what’s next in American innovation.”
“For nearly a century, Texas Instruments has been a bedrock American company driving innovation in technology and manufacturing,” said U.S. Secretary of Commerce, Howard Lutnick. “President Trump has made it a priority to increase semiconductor manufacturing in America – including these foundational semiconductors that go into the electronics that people use every day. Our partnership with TI will support U.S. chip manufacturing for decades to come.”
Unleashing what’s next in American innovation
Today, TI is the largest foundational semiconductor manufacturer in the U.S., producing analog and embedded processing chips that are critical for smartphones, vehicles, data centers, satellites and nearly every other electronic device. In order to meet the steadily growing demand for these essential chips, TI is building on its legacy of technology leadership and expanding its U.S. manufacturing presence to help its customers pioneer the next wave of technological breakthroughs.
Igniting intelligence with Apple
“Texas Instruments’ American-made chips help bring Apple products to life, and together, we’ll continue to create opportunity, drive innovation, and invest in the future of advanced manufacturing across the U.S.,” said Apple’s CEO Tim Cook.
Fueling the future with Ford
Ford and TI are working to strengthen American manufacturing, combining Ford’s automotive expertise with TI’s semiconductor technology to help drive innovation and secure a robust, domestic supply chain for the future of mobility. “At Ford, 80% of the vehicles we sell in the U.S. are assembled in the U.S., and we are proud to stand with technology leaders like TI that continue to invest in manufacturing in the U.S.,” said Jim Farley, President and CEO of Ford Motor Company.
Connecting patient care with Medtronic
Medtronic and TI are partnering to improve lives when it matters most. “At Medtronic, our life-saving medical technologies rely on semiconductors to deliver precision, performance, and innovation at scale,” said Geoff Martha, Medtronic chairman and CEO. “Texas Instruments has been a vital partner – especially during the global chip shortages – helping us maintain supply continuity and accelerate the development of breakthrough therapies. We’re proud to leverage TI’s U.S.-manufactured semiconductors as we work to transform healthcare and improve outcomes for patients around the world.”
Advancing AI with NVIDIA
NVIDIA is partnering with TI to unleash the next generation of artificial intelligence architectures. “NVIDIA and TI share the goal to revitalize U.S. manufacturing by building more of the infrastructure for AI factories here in the U.S.,” said Jensen Huang, founder and CEO of NVIDIA. “We look forward to continuing our collaboration with TI by developing products for advanced AI infrastructure.”
Securing high-speed satellite internet with SpaceX
SpaceX is increasingly leveraging TI’s high-speed process technology to connect its Starlink satellite internet service with TI’s latest 300mm SiGe technology manufactured in Sherman, Texas. “Our fundamental mission is to revolutionize global connectivity and eliminate the digital divide. Core to this mission is constantly pushing the boundaries of what is possible,” said Gwynne Shotwell, president and COO of SpaceX. “SpaceX is manufacturing tens of thousands of Starlink kits a day – all right here in the U.S. – and we are making huge investments in PCB manufacturing and silicon packaging to expand even further. TI’s U.S.-made semiconductors are crucial for securing a U.S. supply chain for our products, and their advanced silicon manufacturing capabilities provide the performance and reliability needed to help us meet the growing demand for high-speed internet all around the world.”
Backed by the strength of TI’s U.S. manufacturing presence
TI is a driving force behind the return and expansion of semiconductor manufacturing in the U.S. The company’s more than $60 billion investment in U.S. manufacturing includes building and ramping seven, large-scale, connected fabs. Combined, these fabs across three manufacturing mega-sites in Texas and Utah will manufacture hundreds of millions of U.S.-made chips daily that will ignite a bold new chapter in American innovation.
- Sherman, Texas: SM1, TI’s first new fab in Sherman will begin initial production this year, just three years after breaking ground. Construction is also complete on the exterior shell of SM2, TI’s second new fab in Sherman. Incremental investment plans include two additional fabs, SM3 and SM4, to support future demand.
- Richardson, Texas: TI’s second fab in Richardson, RFAB2, continues to ramp to full production and builds on the company’s legacy of introducing the world’s first 300mm analog fab, RFAB1, in 2011.
- Lehi, Utah: TI is ramping LFAB1, the company’s first 300mm wafer fab in Lehi. Construction is also well underway on LFAB2, TI’s second Lehi fab that will connect to LFAB1.
Original – Texas Instruments
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As artificial intelligence continues to redefine the boundaries of computing, the infrastructure powering these advancements must evolve in parallel. A recognized leader in power semiconductor technology, ROHM is proud to be among the key silicon providers supporting NVIDIA’s new 800 V High Voltage Direct Current (HVDC) architecture. This marks a pivotal shift in data center design, enabling megawatt-scale AI factories that are more efficient, scalable, and sustainable.
ROHM’s power device portfolio spans both silicon and wide bandgap technologies, including silicon carbide (SiC) and gallium nitride (GaN), offering a strategic path for data center designers. The company’s silicon MOSFETs are already widely adopted across automotive and industrial sectors, providing a cost-effective and reliable solution for today’s power conversion needs. These are ideal for applications where price, efficiency, and reliability must be balanced, making them a strong fit for transitional stages of AI infrastructure development.
A standout example is the RY7P250BM, a 100V power MOSFET endorsed by major global cloud providers designed specifically for hot-swap circuits in 48V power systems—an essential component in AI servers. Key features include best-in-class SOA (Safe Operating Area) performance and ultra-low ON resistance (1.86 mΩ) in a compact 8080 package. These characteristics help reduce power loss and improve system reliability—crucial requirements in high-density, high-availability cloud platforms. As data centers transition from 12V to 48V and beyond, hot-swap capability becomes critical for maintaining uptime and protecting against inrush currents.
Industrial-grade rectification with minimal losses is an area where ROHM’s SiC devices excel and align with NVIDIA’s plans to begin large-scale deployment of its 800V HVDC data center architecture to power 1 MW compute racks and beyond. At the heart of NVIDIA’s new infrastructure is the conversion of 13.8kV AC from the grid directly into 800V DC. The initiative is designed to address the inefficiencies of traditional 54V rack power systems, which are constrained by physical space, copper overload, and conversion losses.
ROHM’s SiC MOSFETs deliver superior performance in high-voltage, high-power environments, offering higher efficiency through reduced switching and conduction losses, greater thermal stability for compact, high-density systems, and proven reliability in mission-critical applications. These characteristics align perfectly with the requirements of the NVIDIA 800 V HVDC architecture, which aims to reduce copper usage, minimize energy losses, and simplify power conversion across the data center.
Complementing SiC, ROHM is advancing gallium nitride technologies under the EcoGaN™ brand. While SiC is best-suited for high voltage, high current applications, GaN offers exceptional performance in the 100V to 650V range, with superior breakdown field strength, low ON resistance, and ultra-fast switching. ROHM’s broad EcoGaNTM lineup includes 150V and 650V GaN HEMTs, gate drivers, and integrated power stage ICs. At the same time, proprietary Nano Pulse ControlTM technology further improves switching performance, reducing pulse widths to as low as 2ns. These innovations support the growing demand for smaller, more efficient power systems in AI data centers.
Beyond discrete devices, ROHM offers a lineup of high-power SiC modules, including top-side cooling molded packages such as the HSDIP20, equipped with advanced 4th Gen SiC chips. These 1200V SiC modules are optimized for LLC topologies in AC-DC converters and primary-side applications in DC-DC converters. Engineered for high-efficiency, high-density power conversion, they are particularly well-suited for the centralized power systems envisioned in NVIDIA’s architecture. Their robust thermal performance and scalability make them ideal for 800 V busways and MW-scale rack configurations.
The transition to an 800V HVDC infrastructure is a collaborative effort. ROHM is committed to working closely with industry leaders like NVIDIA as well as data center operators and power system designers to provide the foundational silicon technologies needed for this next generation of AI factories. Our expertise in power semiconductors, particularly in wide-bandgap materials like SiC and GaN, positions us as a key partner in developing solutions that are not only powerful but also contribute to a more sustainable and energy-efficient digital future.
Original – ROHM
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Toshiba Electronic Devices & Storage Corporation has developed innovative technology that significantly reduces losses in silicon carbide (SiC) trench MOSFETs while enhancing UIS ruggedness. Additionally, Toshiba has developed SiC semi-super junction Schottky barrier diodes (SJ-SBDs) that suppress the increase in on-resistance at high temperatures. These advances are expected to greatly improve the reliability and efficiency of devices used in power conversion applications, such as electric vehicles and renewable energy systems.
Power semiconductors, which supply and control power, are essential for energy-saving in all electrical equipment, and achieving carbon neutrality. With the electrification of automobiles and the miniaturization of industrial equipment, demand for power semiconductors is expected to continue to grow. This is particularly true of SiC MOSFETs, which are gaining attention as next-generation devices that improve better power conversion efficiency than current silicon (Si) MOSFETs.
Among them, SiC trench MOSFETs, where gates are formed in a trench to reduce on-resistance, and SiC Schottky barrier diodes (SBDs), which efficiently convert power by metal semiconductor junction on SiC, are widely used in high-efficiency power conversion applications, such as electric vehicles and renewable energy systems. However, these applications require operation in high-temperature environments that pose challenges for reliability and efficiency improvement.
SiC trench MOSFETs must protect the gate oxide from high electric fields. However, the relationship between UIS ruggedness and the grounding resistance of the electric field protection structure has not been clearly understood, making it difficult to achieve both high gate oxide reliability and low on-resistance.
In addition, although SiC SBDs can operate at higher temperatures than conventional Si SBDs, they must be able to handle increased resistance at elevated temperatures, which leads to higher on-resistance.
Toshiba has developed two key technologies to address these issues.
Technology to Improve UIS Ruggedness of SiC Trench MOSFETs
Figure 1. Structure of SiC Trench MOSFET and Location of Bottom p-well Toshiba has confirmed that forming a protective layer called a Bottom p-well in the trench of SiC trench MOSFETs (Figure 1) and making appropriate reductions in the grounding resistance of the Bottom p-well improves UIS ruggedness. This clarified the previously uncertain relationship between UIS ruggedness and the grounding resistance of the electric field protection structure. The SiC trench MOSFETs prototyped by Toshiba reduced on-resistance by approximately 20% compared to conventional planar SiC MOSFETs (Figure 2).
Figure 2. Comparison of On-Resistance Between Conventional Planar SiC MOSFET and SiC Trench MOSFET (Toshiba test results) Improvement of SiC SJ-SBD Characteristics
Figure 3. Structure of conventional SiC SBDs and SiC SJ-SBDs Toshiba also developed SiC SJ-SBDs that reduce resistance in the drift layer by placing pillars within in that suppress resistance increases at high temperatures (Figure 3 (b)). By comparing the on-resistance changes in conventional SiC SBDs (Figure 3 (a)) and SiC SJ-SBDs at different temperatures, Toshiba confirmed the lower on-resistance of the SiC SJ-SBDs, especially at high temperatures (Figure 4). This is due to the SJ structure, which achieves a flat electric field distribution and reduce on-resistance. The 650V SiC SJ-SBDs developed by Toshiba reduces on-resistance by approximately 35% at high temperatures of 175°C (448.15K) compared to conventional SiC SBDs.
Figure 4. Comparison of On-Resistance and Temperature Dependence Between Conventional SiC SBD and SiC SJ-SBD (Toshiba test results) These two technologies further reduce loss in SiC trench MOSFETs and SiC SBDs, improving the reliability and efficiency of devices for use in future high-efficiency power conversion applications. Such application is particularly expected in fields such as electric vehicles and renewable energy systems. Toshiba aims to further improve the technologies and achieve early practical application.
Toshiba presented details of the new technologies at the 37th International Symposium on Power Semiconductor Devices and ICs (ISPSD) 2025 held in Kumamoto from June 1 to 5. This achievement was based on results obtained from a project subsidized by the New Energy and Industrial Technology Development Organization (NEDO).
Original – Toshiba
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GlobalFoundries announced plans to invest $16 billion to expand its semiconductor manufacturing and advanced packaging capabilities across its facilities in New York and Vermont. GF’s investment is a strategic response to the explosive growth in artificial intelligence, which is accelerating demand for next-generation semiconductors designed for power efficiency and high-bandwidth performance across datacenters, communications infrastructure and AI-enabled devices.
GF is collaborating with major technology companies such as Apple, SpaceX, AMD, Qualcomm Technologies, Inc., NXP and GM, that are committed to reshoring semiconductor production to the U.S. and diversifying their global supply chains. These companies partner with GF to support their production of U.S.-made chips, underscoring GF’s role as a trusted supplier of essential semiconductors and a key enabler of supply chain security.
“At GlobalFoundries, we are proud to partner with pioneering technology leaders to manufacture their chips in the United States—advancing innovation while strengthening economic and supply chain resiliency,” said Tim Breen, CEO of GlobalFoundries. “The AI revolution is driving strong, durable demand for GF’s technologies that enable tomorrow’s datacenters – including GF’s leading silicon photonics, as well as GaN for power applications. Meanwhile at the edge, GF’s proprietary FDX technology is uniquely positioned to support AI functionality with low power consumption. With all these technologies and more manufactured right here in the U.S., GF is proud to play its part in accelerating America’s semiconductor leadership.”
“GlobalFoundries investment is a great example of the return of United States manufacturing for critical semiconductors,” said U.S. Secretary of Commerce, Howard Lutnick. “President Trump has made it a fundamental objective to bring semiconductor manufacturing home to America. Our partnership with GlobalFoundries will secure U.S. semiconductor foundry capacity and technology capabilities for future generations.”
The rapid rise of AI in both the cloud and at the edge is driving the adoption of new technology platforms and 3D heterogeneous integration technologies. These advanced solutions are essential to meet the exponentially growing requirements for power efficiency, bandwidth density and performance. GF is uniquely positioned to lead in this space, with its 22FDX® and silicon photonics capabilities in production in New York and advanced development of differentiated GaN-based power solutions in Vermont.
GF’s investment builds upon the company’s existing U.S. expansion plans, including more than $13 billion to expand and modernize its New York and Vermont facilities and funding for its recently launched New York Advanced Packaging and Photonics Center—the first U.S.-based facility of its kind dedicated to silicon photonics packaging. GF is committing an additional $3 billion, which includes advanced research and development initiatives focused on packaging innovation, silicon photonics and next-generation GaN technologies. In aggregate, these investments represent a $16 billion plan to strengthen U.S. semiconductor leadership and accelerate innovation in AI, aerospace, automotive and high-performance communications.
“Today’s announcement is a direct result of President Trump’s leadership and his vision to bring back high-paying manufacturing jobs and reestablish secure, domestic supply chains for critical technologies,” said Dr. Thomas Caulfield, Executive Chairman of GlobalFoundries. “We look forward to continuing to work with the U.S. government to help create the conditions for industry and government to work together and drive meaningful, long-term impact.”
“GlobalFoundries has supplied semiconductors for Apple products since 2010 and we’re excited to see them expand right here in the United States. These chips are an essential part of Apple products like iPhone, and they’re a powerful example of American manufacturing leadership.”
Tim Cook, Apple’s CEO
“Advanced semiconductors are critical to the advanced satellite capabilities which SpaceX has been pioneering for over two decades. We are excited by the expansion of GlobalFoundries’ manufacturing base right here in the U.S., which is core to Starlink’s growth and our commitment to manufacturing in the U.S., as well as our mission to deliver high-speed internet access to millions of people around the world.”
Gwynne Shotwell, president and COO at SpaceX
“As a valued technology partner, we’re pleased to see GlobalFoundries deepen its commitment to U.S. manufacturing. These efforts are critical to building a secure and resilient semiconductor supply chain in the U.S. to support the next wave of innovation in our industry.”
Dr. Lisa Su, AMD Chair and CEO
“As a strategic supplier of Qualcomm, GlobalFoundries shares our vision for strengthening U.S. chip production capacity. This commitment from GlobalFoundries will help secure a resilient semiconductor supply chain to support the next wave of U.S. technology innovation, especially in areas vital to enabling power efficient computing, connectivity, and edge intelligence.”
Cristiano Amon, president and CEO of Qualcomm Incorporated
“Deepening our partnership with GlobalFoundries aligns with NXP’s hybrid manufacturing strategy, where we work with leading foundry partners to better serve our customers’ strategic technology, capacity and resilience needs. This collaboration allows us to scale efficiently, expand production in the U.S. and continue delivering for our customers. It’s a strong step forward in building a resilient, high-performing semiconductor supply chain in the United States.”
Kurt Sievers, chief executive officer of NXP Semiconductors
“Semiconductors are critical to the future of vehicles, and their importance will only grow. GlobalFoundries’ investment supports our work to secure a reliable, U.S.-based chip supply—essential for delivering the safety, infotainment and features our customers expect.”
Mark Reuss, president of General Motors
Original – GlobalFoundries
