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Alpha and Omega Semiconductor Limited has inaugurated a new OSAT (Outsourced Semiconductor Assembly and Test) facility in Sanand, Gujarat, in partnership with Kaynes Semicon, marking a significant expansion of its global manufacturing footprint.
The facility has commenced high-volume production of AOS’s IPM5 (Intelligent Power Modules), which integrate 17 dies into a single package to enable advanced motor control and energy-efficient applications. The implementation of AOS’s proprietary IPM5 process at the site represents a key step in localizing advanced semiconductor packaging capabilities in India.
The project aligns with the broader objectives of the India Semiconductor Mission and highlights increasing momentum toward regional diversification of semiconductor supply chains. The rapid execution—from groundbreaking to production in just 14 months—demonstrates accelerated ecosystem development in India’s semiconductor manufacturing landscape.
From a strategic perspective, the collaboration combines AOS’s device and module expertise with Kaynes Semicon’s manufacturing capabilities, creating a scalable platform for both domestic and global markets. The facility is positioned not only to serve India’s growing demand for power semiconductors but also to support international supply chains under a “Made in India, for the World” approach.
From a market standpoint, this move reflects a broader industry trend toward geographic diversification of backend manufacturing, particularly in power semiconductors where packaging and integration (e.g., IPMs) are critical value drivers. It also underscores India’s emerging role as a strategic hub for OSAT and power electronics manufacturing, supported by government initiatives and increasing global investment.
Original – Alpha and Omega Semiconductor
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Toshiba Corporation has signed a memorandum of understanding (MoU) with ROHM Co., Ltd., Mitsubishi Electric Corporation, Japan Industrial Partners, and TBJ Holdings Corporation to begin discussions on a potential integration of their semiconductor and power device businesses.
The proposed integration would combine Toshiba Electronic Devices & Storage Corporation’s semiconductor operations with ROHM’s semiconductor business and Mitsubishi Electric’s power device division. The initiative aims to create a larger, more competitive entity capable of strengthening Japan’s position in the global power semiconductor market.
This development builds on ongoing collaboration between Toshiba and ROHM, including a joint plan submitted in 2023 to Japan’s Ministry of Economy, Trade and Industry to support domestic power semiconductor production. That initiative was recognized under government programs aimed at securing stable semiconductor supply chains.
Strategically, the inclusion of Mitsubishi Electric signals an ambition to achieve greater scale and technological depth, particularly in power devices—an area critical for electrification, renewable energy, and industrial systems. The integration could enhance manufacturing efficiency, expand customer reach, and consolidate R&D capabilities across the participating companies.
From a market perspective, this move reflects increasing regional consolidation efforts in response to intensifying global competition, especially from leading players in Europe, the U.S., and China. Japan is seeking to reinforce its domestic semiconductor ecosystem, particularly in power semiconductors where it retains strong technological heritage but faces scale challenges.
At this stage, the agreement marks the start of formal discussions. No final decisions have been made regarding transaction structure or implementation, with further details to be determined as negotiations progress.
Original – Toshiba
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Okmetic has expanded its wafer portfolio to include 300 mm polished wafers and 150–300 mm epitaxial (EPI) wafers through qualified manufacturing partners, strengthening its position as a Europe-based supplier across multiple semiconductor segments.
The company will continue its in-house production of advanced 150–200 mm silicon and bonded SOI wafers, while leveraging external partners for larger wafer sizes and EPI solutions. Despite outsourcing production, Okmetic retains full responsibility for supply chain management and wafer quality, ensuring consistent performance and customer experience.
This hybrid manufacturing model enhances supply flexibility and enables Okmetic to address a broader range of applications, including memory, logic, power, RF, and mixed-signal devices. At the same time, the company maintains strong support for its core markets such as MEMS, sensors, and power semiconductors. Notably, Okmetic also continues to support long-term demand for 150 mm wafers, while its expanded 200 mm polished wafer capacity entered volume production in early 2026.
From a market perspective, this move reflects increasing demand for diversified wafer sourcing strategies, particularly as customers balance legacy nodes (150/200 mm) with advanced 300 mm manufacturing. By combining internal capabilities with partner manufacturing, Okmetic is aligning with industry trends toward supply chain resilience, multi-sourcing, and scalable capacity.
The expansion also positions Okmetic to better support evolving device architectures, including GaN-on-Si and advanced power devices, where substrate quality and availability remain critical. Ongoing R&D collaboration with customers and research partners further supports future technology roadmaps and next-generation semiconductor applications.
Original – Okmetic
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Infineon Technologies AG and DG Matrix have announced a strategic collaboration to enhance power conversion efficiency for AI data centers and industrial electrification through advanced solid-state transformer (SST) technology.
As part of the partnership, DG Matrix will integrate Infineon’s latest-generation silicon carbide (SiC) devices into its Interport™ multi-port SST platform. This integration is expected to improve efficiency, power density, and reliability while strengthening DG Matrix’s semiconductor supply chain as it scales deployments globally.
Solid-state transformers represent a key shift from traditional copper- and iron-based systems, enabling significantly smaller and lighter designs—up to 14 times smaller and 40 times lighter—while offering faster deployment and enhanced control of voltage, power quality, and energy flow. These systems are increasingly critical for connecting medium-voltage grids directly to low-voltage applications such as AI data centers, EV charging infrastructure, renewable energy systems, and industrial microgrids.
From a market perspective, this collaboration highlights the growing importance of SiC in next-generation grid infrastructure. Infineon estimates the semiconductor market for SSTs could reach up to $1 billion within the next five years, driven by rising electricity demand from AI and electrification trends.
The partnership also reflects a broader industry shift toward system-level innovation, where advanced semiconductor technologies like SiC are enabling new power architectures. DG Matrix’s multi-port SST design, combined with Infineon’s SiC roadmap, positions both companies to capitalize on emerging high-voltage, high-efficiency infrastructure requirements.
Looking ahead, the two companies plan continued alignment on future SiC developments as DG Matrix expands toward higher-voltage platforms and larger-scale deployments, supporting the transition to more efficient and resilient global power systems.
Original – Infineon Technologies
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Toshiba America Electronic Components, Inc. presented its latest power semiconductor innovations at APEC 2026, with a focus on improving efficiency, power density, and system reliability across automotive, data center, and industrial applications.
A key highlight is the new UMOS 11 MOSFET family, which delivers improved switching characteristics and reduced RDS(on) per area compared to the previous UMOS 10 generation. These enhancements support higher efficiency and compact system designs, particularly in applications requiring fast switching and low conduction losses.
Toshiba is also emphasizing advanced packaging and wide bandgap technologies. This includes its top-side cooled TOGT package, designed to improve thermal dissipation in high power-density systems by transferring heat directly to the heatsink rather than the PCB. In parallel, the company is showcasing its latest SiC modules and 750V/1200V SiC devices targeting grid infrastructure and automotive inverters, alongside ongoing GaN developments for both low- and high-voltage applications.
Beyond discrete devices, Toshiba is presenting a broad system-level portfolio including microcontrollers, motor control solutions, and protection ICs, supported by reference designs such as 3kW server power supplies, automotive ECU power architectures, and motor drive systems.
From a market perspective, Toshiba’s APEC presence underscores a key industry trend: convergence of silicon, SiC, and GaN technologies within unified platforms to address diverse power requirements. Its vertically integrated manufacturing model remains a strategic differentiator, ensuring supply stability and quality—critical factors as demand accelerates in AI data centers, electrified mobility, and renewable energy systems.
Original – Toshiba
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Renesas Electronics Corporation has launched the TP65B110HRU, the industry’s first bidirectional GaN switch based on depletion-mode (d-mode) technology, enabling both positive and negative current blocking in a single device.
The new 650V SuperGaN® device is designed to simplify power conversion architectures in applications such as solar microinverters, AI data centers, and onboard EV chargers. By replacing traditional back-to-back FET configurations, the device allows true single-stage power conversion, reducing component count, system complexity, and losses.
Conventional silicon and SiC switches are unidirectional, requiring multi-stage topologies or back-to-back configurations that increase switch count and reduce efficiency. In contrast, Renesas’ bidirectional GaN device integrates this functionality into a single component. For example, a solar microinverter can reduce its switch count by half and eliminate DC-link capacitors, while achieving efficiencies above 97.5%.
The device combines a high-voltage GaN structure with co-packaged low-voltage silicon MOSFETs, enabling compatibility with standard gate drivers without requiring negative gate bias. This simplifies gate drive design while maintaining robust switching performance in both hard- and soft-switching topologies. With dv/dt immunity exceeding 100 V/ns and low on-resistance of 110 mΩ, the device supports high-frequency, high-density designs.
From a technology perspective, this marks a significant step toward system-level simplification in power electronics. Bidirectional GaN enables new converter topologies, particularly in high-growth segments like AI power infrastructure and distributed energy systems, where efficiency, density, and BOM reduction are critical.
Renesas is positioning the device within its broader system solution strategy, offering evaluation kits and “Winning Combinations” that integrate controllers, drivers, and power devices to accelerate time-to-market and reduce design risk.
Original – Renesas Electronics
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ROHM Co., Ltd. announced it is reviewing strategic options to strengthen its long-term competitiveness, including evaluating a proposal from DENSO Corporation regarding a potential share acquisition.
The company highlighted that the power semiconductor industry is entering a critical phase, characterized by intensifying global competition and rapid technological innovation. In response, ROHM is pursuing structural reforms under its Medium-Term Management Plan (announced November 2025), focusing on portfolio optimization, enhanced R&D capabilities, and potential scale expansion through partnerships or integration.
As part of this broader strategy, ROHM has been in ongoing discussions since mid-2024 with Toshiba Corporation and Japan Industrial Partners to explore collaboration opportunities in semiconductors. These discussions remain active and are being evaluated alongside other strategic alternatives.
The newly received proposal from DENSO represents a different strategic direction compared to ROHM’s current standalone transformation plan. To ensure an objective evaluation, the company has established a special committee composed of independent directors to assess the proposal against other options, with a focus on long-term corporate value and shareholder interests.
Importantly, ROHM emphasized that no decision has been made by either the Board or the special committee at this stage. The company also noted concerns from business partners regarding operational continuity amid media speculation, reaffirming its commitment to stable supply, product quality, and ongoing operations.
From a market perspective, this development underscores increasing consolidation pressure within the power semiconductor ecosystem—particularly in automotive and electrification segments—where scale, vertical integration, and close OEM relationships are becoming critical competitive factors.
Original – ROHM
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Navitas Semiconductor announced two new package options for its 5th generation GeneSiC silicon carbide MOSFET platform, introducing a top-side cooled QDPAK package and a low-profile TO-247-4L package with asymmetrical leads. The new devices target applications requiring high power density and improved thermal performance, including AI data centers and energy infrastructure systems.
The devices are based on the company’s fifth-generation trench-assisted planar silicon carbide MOSFET technology. This architecture delivers a 35% improvement in the RDS(on) multiplied by gate-drain charge figure of merit and approximately a 25% improvement in the gate-drain to gate-source charge ratio. Combined with a stable gate threshold voltage greater than 3 V, the design helps prevent parasitic turn-on and enables predictable switching behavior in high-power systems.
The new QDPAK package features a top-side cooling structure designed to address thermal limitations of traditional PCB-based cooling approaches. Heat is transferred directly through the top of the package to a heatsink, improving thermal efficiency and enabling smaller system footprints. The package also reduces parasitic inductance, supporting cleaner switching at high frequencies. It provides a compact footprint of approximately 15 mm by 21 mm with a height of 2.3 mm and includes design features that extend creepage distance while supporting applications up to 1000 VRMS.
Navitas also introduced a low-profile TO-247-4L through-hole package designed for systems where vertical space is constrained. By reducing the height of the package on the PCB, the design enables higher power density compared with conventional TO-247-4 packages. The device also incorporates asymmetrical leads, including thinner leads for the gate and Kelvin-source connections, to improve manufacturing tolerances during PCB assembly.
The new packaging options are intended for applications such as AI data center power supplies and high-performance power conversion systems where compact form factors and efficient thermal management are essential.
The initial products include four 1200 V SiC MOSFETs with on-resistance values of 6.5 mΩ and 12 mΩ, offered in both QDPAK and TO-247-4L packages. Samples are available for customer evaluation.
Original – Navitas Semiconductor
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SK keyfoundry announced the development of a silicon carbide planar MOSFET process platform and revealed that it has secured its first order for a 1200 V SiC MOSFET product, marking the company’s entry into the silicon carbide compound semiconductor foundry market.
The newly developed platform supports a voltage range from 450 V to 2300 V and is designed to deliver high reliability and stability in high-voltage operating environments. According to the company, process optimization and tighter control of key manufacturing steps have enabled yields exceeding 90% while improving overall productivity.
SK keyfoundry also highlighted a customized process support service that allows device designers to fine-tune electrical characteristics and specifications according to their application requirements.
Following completion of the process platform, the company secured an order from a customer specializing in SiC device design for the development of a 1200 V MOSFET product. The device will be used in industrial equipment applications where thermal efficiency management is critical. After prototype evaluation and reliability testing, mass production is expected to begin in the first half of 2027.
The development represents the first major outcome following SK keyfoundry’s acquisition of SK powertech, which specializes in SiC technology. The integration of capabilities from both companies enabled the creation of the new platform.
SK keyfoundry stated that securing a commercial customer order immediately after completing the technology development demonstrates the maturity and competitiveness of the platform and signals readiness for commercialization in the growing compound semiconductor market. CEO Derek D. Lee said the company plans to expand its high-voltage power semiconductor offerings to meet increasing demand from global customers.
Original – SK keyfoundry
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Danfoss has acquired the remaining shares in Semikron Danfoss, increasing its ownership from 62% to 100% and turning the former joint venture into a fully owned subsidiary.
The move supports Danfoss’ electrification strategy under its LEAP 2030 plan, which prioritizes investment in high-value growth areas such as advanced power electronics and industrial-scale electrification technologies.
With full ownership, Danfoss gains greater strategic control over Semikron Danfoss and aims to accelerate investments in technology leadership, advanced power modules, and large-scale power electronics systems. The company expects the transition from a joint venture structure to full ownership to strengthen its ability to serve key markets including industrial drives, renewable energy systems, data centers, energy storage, off-highway equipment, construction machinery, and commercial vehicles.
Danfoss stated that the ownership change will not affect day-to-day operations. Semikron Danfoss will continue operating with the same teams and leadership structure while maintaining its focus on delivering power semiconductor modules and power electronics solutions to global customers.
Semikron and Danfoss originally merged their power module businesses in March 2022 to create Semikron Danfoss, combining expertise in power semiconductors and industrial power electronics. Since the merger, Danfoss has continued investing in the company’s technology and manufacturing capabilities.
As part of the strategic realignment, Danfoss also announced plans to divest the Semikron Danfoss business focused on power modules for electric passenger cars. The company considers this segment non-core and intends to concentrate on industrial electrification markets and broader energy transition applications.
Original – Danfoss
