-
Wolfspeed has filed a patent infringement lawsuit against Navitas Semiconductor in the U.S. District Court for the District of Delaware, alleging that numerous GaN and SiC products infringe multiple Wolfspeed patents. The legal action underscores Wolfspeed’s strategy to protect its wide-bandgap semiconductor intellectual property as competition intensifies across the power electronics market.
According to the lawsuit, Wolfspeed alleges that several major Navitas product families infringe five U.S. patents:
- U.S. Patent No. 8,169,005
- U.S. Patent No. 10,998,418
- U.S. Patent No. 10,886,396
- U.S. Patent No. 10,749,443
- U.S. Patent No. 11,888,392
The complaint identifies a broad range of Navitas products, including:
- GaNFast® GaN power devices
- GaNSlim™ integrated GaN solutions
- GaNSafe® protected GaN devices
- GeneSiC™ silicon carbide MOSFETs
- SiCPAK® power modules
Wolfspeed stated that the lawsuit reflects its commitment to protecting the intellectual property developed through decades of research and development in silicon carbide and gallium nitride technologies.
Wolfspeed described its intellectual property as a strategic asset supporting continued investment in next-generation power semiconductor technologies.
According to CEO Robert Feurle, protecting the company’s patent portfolio is a priority for both Wolfspeed and its shareholders, emphasizing that while the company respects the intellectual property rights of others, it also expects its own innovations to receive similar protection.
Original – Wolfspeed
-
onsemi has announced definitive agreements to divest its manufacturing facilities in Tarlac, Philippines, and Mountain Top, Pennsylvania, as part of its ongoing Fab Right manufacturing strategy. The transactions are intended to optimize the company’s global manufacturing footprint, improve cost competitiveness, and support long-term gross margin expansion while maintaining supply continuity for customers.
The divestitures are part of onsemi’s broader Fab Right initiative, which focuses on aligning manufacturing resources with the company’s most competitive, scalable, and technology-focused operations.
By streamlining its manufacturing network, onsemi aims to:
- Improve manufacturing cost structure
- Expand gross margins
- Increase operational efficiency
- Better align production capacity with long-term strategic priorities
onsemi has signed an agreement to sell its Tarlac, Philippines manufacturing facility to Greatek Electronics Inc., a Taiwan-based provider of semiconductor packaging and testing services.
Key details include:
- Expected closing within three to six months
- Subject to customary regulatory approvals and closing conditions
- Facility will continue operating during the transition period
- Long-term supply agreement established to ensure uninterrupted customer supply after closing
The supply agreement is intended to maintain production continuity while leveraging Greatek’s packaging and test capabilities.
The company has also entered into an agreement to divest its Mountain Top, Pennsylvania facility to Silex Microsystems, a Sweden-based semiconductor manufacturer.
Unlike the Tarlac transaction, the Mountain Top sale will follow a longer transition timeline:
- Expected closing in January 2028
- Subject to customary approvals
- Extended transition supports gradual migration of manufacturing to other onsemi facilities
This phased approach is designed to enable an orderly transfer of products and technologies while minimizing disruption for customers.
onsemi expects the manufacturing footprint optimization to generate approximately:
- US$35 million in annual cost savings
- Initial savings beginning in 2027
- Full annual savings realized in 2028
The company views these savings as an important contribution toward improving long-term profitability and manufacturing efficiency.
Both transactions include measures to ensure uninterrupted customer supply throughout the transition periods.
These include:
- Continued operation of the affected facilities until production transfers are completed
- Long-term manufacturing and supply agreements where appropriate
- Planned migration of products to other qualified manufacturing sites within onsemi’s global network
Original – onsemi
-
Infineon Technologies has officially opened its new Smart Power Fab in Dresden several months ahead of schedule, marking the largest single investment in the company’s history. The €5 billion facility doubles manufacturing capacity at the Dresden campus, establishes the world’s largest production site for intelligent power semiconductors and analog/mixed-signal technologies, and creates approximately 1,000 new direct jobs.
The Smart Power Fab significantly strengthens Infineon’s manufacturing capabilities for power semiconductors used across a broad range of high-growth markets, including:
- AI data center power infrastructure
- Software-defined vehicles
- Renewable energy systems
- Industrial automation
- Smart power management applications
According to Infineon CEO Jochen Hanebeck, the new facility arrives at a pivotal time as global demand accelerates for energy-efficient semiconductor technologies that support AI infrastructure, electrification, and digital transformation. The additional capacity is intended to strengthen supply chains for critical industries while reinforcing Infineon’s leadership in power semiconductors and analog technologies.
The project represents one of the largest industrial investments currently underway in Germany and reinforces Europe’s ambitions to expand domestic semiconductor manufacturing capacity.
German Federal Chancellor Friedrich Merz described the new fab as a strong signal for Germany and Europe as competitive locations for advanced semiconductor production, highlighting the strategic importance of power semiconductors for:
- AI infrastructure
- Energy transition
- Electric mobility
- Supply chain resilience
- European technological sovereignty
German Federal Minister for Digital Transformation and Government Modernization Dr. Karsten Wildberger emphasized that chips produced at the Dresden facility will serve key applications including electric vehicles, wind turbines, and AI data center power infrastructure.
Saxony Minister-President Michael Kretschmer also noted that the investment further strengthens Dresden’s position within Europe’s largest semiconductor ecosystem, Silicon Saxony.
The Smart Power Fab incorporates extensive digitalization and artificial intelligence throughout its manufacturing operations to improve production efficiency and accelerate product ramp-up.
Key digital manufacturing innovations include:
- Digital twin technology used to optimize factory and equipment layout before construction
- AI-supported process qualification and production optimization
- Advanced automation throughout manufacturing operations
- Flexible production capable of responding rapidly to changing market demand
Infineon expects these technologies to enable production ramp-up roughly twice as fast as previous generations of fabs.
A major differentiator of the new facility is its integration with Infineon’s manufacturing site in Villach, Austria, through the company’s “One Virtual Fab” concept.
This virtual manufacturing network enables:
- Faster process qualification
- Accelerated product introduction
- Shared manufacturing know-how
- Improved production flexibility
- More efficient utilization of global manufacturing capacity
The integrated approach allows Infineon to respond more quickly to customer demand, particularly in fast-growing markets such as AI infrastructure.
Semiconductors produced at the Dresden Smart Power Fab will primarily target smart power applications requiring both power conversion and intelligent control.
Target applications include:
- AI data center power supplies
- Wind and solar energy systems
- Software-defined vehicles
- Intelligent power switches
- Industrial power management systems
By combining power semiconductors with analog and mixed-signal technologies, Infineon aims to deliver highly integrated, energy-efficient solutions capable of monitoring and controlling power flow within increasingly complex electronic systems.
Beyond the 1,000 direct jobs created by the new facility, Infineon expects the project to generate significant indirect employment throughout the regional semiconductor ecosystem.
Industry studies indicate that every cleanroom manufacturing job supports approximately six additional jobs across suppliers, equipment manufacturers, construction, logistics, and supporting industries.
The expansion further strengthens Silicon Saxony, Europe’s largest semiconductor cluster, which already employs more than 80,000 people.
The Smart Power Fab has been designed with sustainability as a core objective, incorporating several measures to reduce environmental impact:
- Natural gas-free manufacturing processes
- Advanced water recycling systems
- Closed-loop water management
- Approximately 90% water recirculation
- Recovery of up to 45% of energy through water treatment processes
- Reduced overall energy consumption through optimized manufacturing technologies
These measures are intended to improve the environmental footprint of semiconductor manufacturing while supporting Europe’s broader sustainability objectives.
The opening of the Smart Power Fab represents a major milestone for both Infineon and Europe’s semiconductor industry. By significantly expanding production of smart power semiconductors, the company is positioning itself to address rapidly growing demand driven by AI infrastructure, electrification, renewable energy, and industrial automation, while simultaneously strengthening European semiconductor manufacturing capacity and supply chain resilience.
Original – Infineon Technologies
-
Infineon Technologies has been identified as “the company to beat” in AI data center power semiconductors in Gartner’s recent report, AI Vendor Race: Infineon Is the Company to Beat in AI Data Center Power Semiconductors. According to the report, Infineon’s leadership is driven by its comprehensive product portfolio, extensive manufacturing capabilities, and early investments in advanced semiconductor technologies, particularly silicon carbide (SiC) and gallium nitride (GaN).
The recognition highlights Infineon’s growing role in addressing one of the industry’s most significant challenges: delivering highly efficient power conversion solutions capable of supporting the rapidly increasing power demands of AI data centers.
A key differentiator identified in the Gartner report is Infineon’s ability to provide semiconductor solutions across the entire AI power delivery chain rather than focusing on individual subsystems.
Infineon’s portfolio spans every major stage of power conversion, including:
- Solid-state transformers (SSTs)
- Power supply units (PSUs)
- Energy storage systems (ESS)
- Intermediate bus converters (IBCs)
- Processor-level voltage regulation and power management
This “grid-to-core” approach enables system designers to optimize efficiency throughout every power conversion stage, helping reduce cumulative energy losses across hyperscale AI data centers while improving overall system reliability and thermal performance.
As AI server racks continue moving toward significantly higher power levels, efficient power conversion at every stage has become increasingly critical to reducing operational costs and meeting sustainability objectives.
Infineon’s competitive advantage is further strengthened by its broad semiconductor technology portfolio, which combines conventional silicon with wide-bandgap semiconductor technologies.
According to Gartner, the company’s early investments in silicon carbide and gallium nitride position it well for next-generation AI infrastructure, particularly emerging 800 VDC power architectures.
Infineon applies each semiconductor technology where it offers the greatest system benefit:
- Silicon carbide (SiC) for high-voltage, high-efficiency power conversion from the utility grid to rack-level infrastructure.
- Gallium nitride (GaN) for high-frequency, high-power-density intermediate conversion stages.
- Silicon (Si) for processor-level power management and control functions.
By selecting the optimal semiconductor material for each conversion stage, Infineon aims to minimize energy losses while maximizing power density and overall system efficiency.
While Gartner identifies Infineon as the current market leader, the report also notes that competition is intensifying.
Growing investment in SiC and GaN technologies, along with competitors focused on processor-level and compute-board power delivery, is increasing competitive pressure throughout the AI power semiconductor ecosystem.
Infineon’s response centers on leveraging its broad product portfolio and system-level expertise to deliver integrated power solutions that span the entire power delivery architecture rather than isolated components.
Infineon projects approximately €2.5 billion in AI-related revenue during fiscal year 2027, reflecting the company’s expectations for continued expansion across AI infrastructure markets.
The forecast is supported by demand for increasingly efficient power delivery systems capable of supporting next-generation AI clusters, high-density GPU servers, and higher-voltage power architectures.
While AI data centers remain a major growth opportunity, Infineon is also expanding its focus toward Physical AI applications.
The company is working with system integrators, technology partners, and data center operators to develop next-generation AI power architectures while simultaneously supporting emerging intelligent machines including:
- Humanoid robots
- Collaborative robots (cobots)
- Autonomous systems
- Intelligent industrial automation
Infineon’s portfolio extends beyond power semiconductors to include:
- Microcontrollers
- Power management solutions
- Sensors
- Connectivity technologies
- Functional safety solutions
- Cybersecurity technologies
This broad technology base enables the company to support complete electronic platforms for intelligent machines capable of sensing, processing information, and interacting safely with the physical world.
Infineon also highlighted the significant long-term opportunity represented by Physical AI.
Based on industry projections referenced by the company, the global robotics market could reach up to $1.7 trillion by 2050, with approximately 300 million humanoid robots deployed worldwide. Given an estimated semiconductor bill of materials of around $500 per humanoid robot, the company views intelligent robotics as one of the largest future growth opportunities for the semiconductor industry.
From electrical grid infrastructure through AI data centers to autonomous machines operating in factories and commercial environments, Infineon continues to position its semiconductor portfolio around the complete AI ecosystem, spanning both digital infrastructure and the rapidly emerging Physical AI market.
Original – Infineon Technologies
-
onsemi and Synaptics Incorporated have entered into a definitive agreement under which onsemi will acquire Synaptics in an all-stock transaction valued at approximately $7 billion. The acquisition is intended to significantly expand onsemi’s capabilities beyond power semiconductors and sensing into intelligent, system-level solutions spanning edge artificial intelligence (AI), wireless connectivity, and human-machine interface technologies.
Under the terms of the agreement, Synaptics shareholders will receive 1.350 shares of onsemi common stock for each Synaptics share, representing an approximately 19% premium based on the companies’ 10-day volume-weighted average share prices prior to the announcement. Following completion of the transaction, Synaptics shareholders are expected to own approximately 12% of the combined company on a fully diluted basis.
The acquisition marks a significant strategic step in onsemi’s evolution toward becoming a provider of complete intelligent systems. By combining Synaptics’ Edge AI computing platform, wireless connectivity technologies, and human-machine interface (HMI) portfolio with onsemi’s established strengths in power management, sensing, automotive electronics, industrial automation, and AI data center infrastructure, the combined company aims to address the rapidly growing Physical AI market.
According to onsemi, the acquisition has the potential to expand its total addressable market (TAM) by approximately $30 billion, increasing it to an estimated $243 billion by 2030. The company expects the combined technology portfolio to enable integrated solutions that can sense, process, communicate, and control real-world systems across a wide range of applications.
onsemi President and CEO Hassane El-Khoury emphasized that artificial intelligence is increasingly moving beyond cloud computing into physical systems such as automobiles, industrial equipment, robotics, and intelligent infrastructure. He noted that next-generation Physical AI applications require the seamless integration of four fundamental technology pillars:
- Power
- Sensing
- Connected computing
- Control
The acquisition of Synaptics is expected to provide onsemi with immediate edge computing capabilities while expanding its software ecosystem and enabling the delivery of more comprehensive intelligent systems solutions.
Synaptics contributes several strategic technology assets to the combined company, including its Astra Edge AI platform, which integrates:
- AI-optimized processors
- Neural processing units (NPUs)
- Multimodal AI capabilities
- Wi-Fi connectivity
- Bluetooth connectivity
- GPS technologies
- Open-source software development environment
These technologies are designed to support intelligent edge devices requiring local AI processing with low latency and reduced cloud dependence.
Synaptics President and CEO Rahul Patel described the transaction as an opportunity to combine Synaptics’ strengths in Edge AI, connectivity, and human-machine interfaces with onsemi’s leadership in intelligent power and sensing to create integrated hardware and software platforms across the entire Edge AI stack.
The companies expect the combination to deliver several strategic advantages:
- Extend onsemi’s presence from AI infrastructure into intelligent edge systems
- Expand capabilities in automotive, industrial, robotics, augmented reality (AR), and virtual reality (VR)
- Accelerate development of integrated system-level solutions
- Increase semiconductor content per customer platform
- Deepen long-term customer relationships through combined hardware, software, and connectivity offerings
- Strengthen participation in higher-value markets with greater software and intellectual property content
The transaction is expected to generate attractive financial benefits, including:
- Accretion to non-GAAP earnings per share within approximately 18 months after closing
- Approximately $200 million in expected annual cost synergies
- Gross margins consistent with onsemi’s long-term financial objectives
- Continued commitment to onsemi’s existing capital return policy during the transaction process
The acquisition has been unanimously approved by the boards of directors of both companies. In addition, one member of the Synaptics Board of Directors is expected to join onsemi’s Board following completion of the transaction.
The transaction is anticipated to close in mid-2027, subject to:
- Approval by Synaptics shareholders
- Required regulatory approvals
- Satisfaction of customary closing conditions
Both companies reaffirmed their previously issued financial guidance. onsemi reiterated its second-quarter 2026 outlook, while Synaptics reaffirmed its fiscal fourth-quarter 2026 guidance.
If completed, the acquisition would represent one of the largest strategic transactions in the semiconductor industry focused on Edge AI and Physical AI. By combining power semiconductors, sensing technologies, embedded AI processing, wireless connectivity, and software platforms, the merged company aims to establish a comprehensive portfolio capable of supporting next-generation intelligent systems across automotive, industrial automation, robotics, AI infrastructure, and connected edge computing markets.
Original – onsemi
-
Dynex Semiconductor has announced the development of a new 450 A, 650 V gallium nitride (GaN) half-bridge power module designed to deliver ultra-fast switching performance, high efficiency, and advanced thermal management for next-generation power conversion systems.
As demand grows for higher energy efficiency, increased power density, and more compact power electronics, wide-bandgap semiconductor technologies are becoming increasingly important. While silicon carbide (SiC) devices have driven significant improvements in high-power conversion systems, gallium nitride (GaN) technology offers additional advantages in applications where switching speed and efficiency are critical performance drivers.
The new module is based on Gallium Nitride High Electron Mobility Transistors (HEMTs), which offer several key advantages over conventional silicon IGBTs and silicon carbide MOSFETs.
GaN devices support significantly faster switching speeds, enabling operation at higher frequencies while reducing switching losses. Unlike silicon and SiC devices, GaN HEMTs do not contain an intrinsic body diode, eliminating reverse recovery losses and improving efficiency during high-frequency operation.
Additional benefits include lower gate charge and output capacitance, which reduce gate-drive power requirements and improve overall system efficiency. These characteristics allow designers to shrink passive components such as inductors and capacitors, contributing to higher power density and more compact system architectures.
Dynex’s new power module combines GaN semiconductor technology with an advanced packaging approach designed to minimize electrical parasitics and maximize performance.
Key specifications include:
- 450 A continuous current capability
- 650 V blocking voltage
- Half-bridge inverter configuration
- Planar PCB embedding technology
- Double-sided cooling architecture
- Ultra-low commutation loop inductance below 1 nH
A key differentiator is the use of planar PCB embedding technology, which significantly reduces parasitic inductance within the power loop. Maintaining loop inductance below 1 nH enables exceptionally fast switching while minimizing voltage overshoot, ringing, and electromagnetic interference (EMI).
The embedding process also facilitates precise matching and balancing of parallel GaN devices, helping ensure uniform switching characteristics and improved module reliability under high-current operation.
To support high power density and continuous operation, the module incorporates a double-sided cooling architecture. By providing thermal paths on both sides of the semiconductor devices, the design minimizes junction-to-coolant thermal resistance and improves heat extraction efficiency.
This enhanced thermal management capability enables higher power throughput while maintaining safe operating temperatures, helping improve both system reliability and long-term performance.
The combination of ultra-low electrical parasitics and efficient thermal management allows the module to operate effectively in applications where both switching speed and power density are critical requirements.
The 450 A, 650 V GaN module is intended for a broad range of high-performance power conversion systems, including:
- Electric vehicle power electronics
- Renewable energy inverters
- Battery energy storage systems (BESS)
- AI and data center power supplies
- Fast charging infrastructure
- Industrial power conversion equipment
- High-frequency power electronics platforms
The development highlights the growing role of GaN technology in medium-voltage, high-current power conversion applications. While GaN has traditionally been associated with lower-power and high-frequency systems, advancements in packaging, thermal management, and device integration are enabling its expansion into increasingly demanding industrial and infrastructure applications.
By combining high current capability, low inductance packaging, and double-sided cooling, Dynex’s new 450 A, 650 V GaN module demonstrates how wide-bandgap technologies can support the industry’s push toward higher efficiency, greater power density, and more compact power conversion architectures.
As electrification, renewable energy deployment, AI infrastructure growth, and advanced industrial automation continue to accelerate, GaN-based power modules such as this are expected to play an increasingly important role in enabling the next generation of efficient power electronics systems.
Original – Dynex Semiconductor
-
Toshiba Electronic Devices & Storage Corporation has developed a 6500 V-rated trench-type second-generation Injection Enhanced Gate Transistor (IEGT) chip featuring enhanced turn-off capability and short-circuit robustness. The company has also commercialized a new 6500 V press-pack IEGT (PPI) incorporating the technology for use in high-voltage applications, including HVDC transmission systems, STATCOM installations, and industrial motor drives.
The new device increases the voltage rating from the conventional 4500 V class to 6500 V, enabling a reduction in the number of power semiconductor devices connected in series for a given output voltage. According to Toshiba, this contributes to simpler system architectures and more compact power conversion equipment.
The development comes as the deployment of renewable energy continues to expand worldwide, increasing the need for efficient long-distance power transmission and advanced grid stabilization technologies. Since power generation sites and energy consumption centers are often geographically separated, high-voltage direct current (HVDC) transmission systems are becoming increasingly important. At the same time, the adoption of static synchronous compensators (STATCOMs) is growing to support grid stability.
In these high-voltage power conversion systems, multiple semiconductor devices are typically connected in series. Increasing the voltage rating of individual devices reduces the number of required components, helping lower system complexity and equipment size.
Toshiba has previously mass-produced 4500 V-class press-pack IEGTs. However, achieving reliable operation at 6500 V requires maintaining sufficient turn-off capability and short-circuit performance under significantly higher voltage conditions. This challenge is closely linked to the precise control of carrier transport within the semiconductor structure. In addition, variations in breakdown voltage observed during bias testing represented another technical hurdle.
To address these challenges, Toshiba developed a new 6500 V IEGT chip featuring a shorted dummy cell structure in the cell region, eliminating floating regions that can cause unstable potential distribution. The company also optimized the mesa width within the current conduction region and introduced an N-barrier layer beneath the P-base layer responsible for carrier transport control.
These structural enhancements improve carrier distribution and current flow throughout the device, resulting in more uniform current distribution during turn-off operation. Toshiba stated that this enables stable operation with sufficient turn-off capability and short-circuit performance under high-voltage conditions. The company also confirmed an improved trade-off between conduction losses and switching losses.
In the termination region, Toshiba adopted a structure incorporating guard rings and a semi-insulating layer to distribute the electric field more effectively. This design enables breakdown voltages exceeding 6500 V. Additionally, optimization of the interface process between the semi-insulating layer and silicon suppresses breakdown voltage variations observed under bias stress conditions, contributing to more stable device characteristics.
The newly developed chip has undergone turn-off and short-circuit testing at a voltage of 4500 V, confirming its suitability for high-voltage power applications.
Based on this technology, Toshiba has commercialized the ST2000JXH35A, a 6500 V / 2000 A press-pack IEGT. In HVDC transmission systems, the use of 6500 V devices can reduce the number of series-connected semiconductor devices by approximately 33% compared with 4500 V solutions, contributing to lower system size and weight.
Toshiba stated that it will continue developing press-pack IEGT technologies for high-voltage power conversion applications while expanding its product portfolio to support the advancement of power transmission and energy infrastructure systems.
The technology was presented at PCIM Europe 2026, held in Nuremberg, Germany, from June 9 to 11, 2026.
Original – Toshiba
-
Toshiba Electronic Devices & Storage Corporation has developed a new silicon carbide (SiC) power module technology for high-frequency inverter applications that delivers lower power losses and enhanced reliability. The technology combines Toshiba’s proprietary Schottky barrier diode (SBD)-embedded SiC MOSFET with an optimized module design to achieve highly reliable and low-loss operation during high-speed switching.
According to simulation results, the new technology can reduce total inverter power losses by approximately 30% during 60 kHz high-frequency operation compared with power modules utilizing conventional SBD-embedded SiC MOSFET structures.
The rapid adoption of artificial intelligence and the continued expansion of data center infrastructure are driving significant increases in electricity consumption. As a result, power systems are under growing pressure to deliver higher efficiency and greater power density. This trend is increasing the importance of power semiconductors capable of operating at higher switching frequencies, particularly in critical applications such as inverters and uninterruptible power supplies (UPS), where both efficiency and compactness are key requirements.
Within this environment, 1200 V-class SiC power modules are expected to play a central role in next-generation power systems. However, further advances in both semiconductor devices and module design are required to fully realize their potential.
Toshiba has previously addressed reliability challenges associated with diode conduction in SiC devices through the development of SBD-embedded SiC MOSFET technology. Conventional structures, however, impose limitations on the layout of channel and SBD regions, making it difficult to simultaneously achieve low on-resistance and high diode reliability. In addition, efforts to reduce total chip area within a power module can improve switching speed but often introduce trade-offs, including higher on-resistance, reduced diode reliability, and compromised thermal performance.
To overcome these challenges, Toshiba developed a new SBD-embedded SiC MOSFET structure that combines a checkerboard-pattern SBD layout with a deep p-type barrier region. By utilizing the electric-field suppression effect of the deep p-type barrier region, the company achieved greater design flexibility and enabled the integrated optimization of multiple device parameters, including the channel, drift layer, JFET region, and gate-drive conditions.
This architecture suppresses localized current concentration, improves current flow through both the channel and drift layer, and enables stable current operation during both on-state and diode conduction modes. As a result, the trade-off between on-resistance and diode reliability is significantly improved.
The new device achieves a specific on-resistance of 1.8 mΩ·cm² at 25°C and 2.7 mΩ·cm² at 150°C, representing approximately a 50% reduction compared with conventional device structures. In addition, SBD current conduction capability per unit area has been increased by approximately 40%.
The newly developed device has been incorporated into a 1200 V-class SiC power module. Through this implementation, Toshiba reduced the total chip area within the module by approximately 36% compared with conventional designs. Despite the reduction in chip area, improvements in device performance, including lower on-resistance and enhanced reliability, enabled lower conduction losses at the module level while maintaining diode reliability.
Toshiba also enhanced the packaging structure and module design through the adoption of a resin-insulated substrate. These improvements reduced thermal resistance per unit area by approximately 25%, improving heat spreading performance and maintaining effective heat dissipation despite the higher thermal density associated with smaller chip dimensions.
The combined device and packaging innovations also contributed to further reductions in switching losses. Simulation results demonstrated that total inverter power losses can be reduced by approximately 30% during 60 kHz high-frequency operation. Additional reductions in switching losses are expected through further optimization of operating conditions, including gate-drive speed.
The company believes the technology will serve as an important platform for achieving higher efficiency and greater miniaturization in power conversion systems, including data center UPS systems, industrial equipment, and renewable energy applications.
Toshiba plans to continue advancing the technology toward practical deployment and mass production while pursuing further improvements in high-frequency operation and overall system performance. The company aims to contribute to higher energy efficiency across power systems and support the development of a more sustainable society.
Original – Toshiba
-
Wolfspeed has introduced its fifth-generation silicon carbide (SiC) technology platform, delivering significant advances in efficiency and performance for next-generation 1200 V and 750 V automotive and industrial power applications.
The new Gen 5 platform builds on the company’s previous generation technology and is designed to address increasing demands for higher efficiency, greater power density, and improved thermal performance across electric vehicles, charging infrastructure, industrial power supplies, and other high-power systems.
According to Wolfspeed, the latest generation establishes a new benchmark for specific on-resistance (RSP), a key performance metric that measures efficiency relative to the active die area of a MOSFET. The technology is intended to help system designers develop more compact and efficient power conversion systems while supporting higher current capability within the same silicon carbide footprint.
“Gen 4 delivered the switching performance breakthrough our customers needed, and less than two years later we are introducing Gen 5, which provides the highest current capability possible within a 5 x 5 mm silicon carbide footprint,” said Dr. Cengiz Balkas, Chief Business Officer at Wolfspeed. “The technology enables a faster path to more efficient, compact, and robust systems designed for real-world operating conditions.”
The company noted that automotive manufacturers continue to face pressure to achieve electrification goals while addressing challenges related to vehicle cost, safety, driving range, and charging infrastructure. Wolfspeed stated that Gen 5 technology was developed to help address these factors by enabling more compact traction inverter designs, improving vehicle efficiency, and supporting optimization of battery sizing.
Beyond electric vehicle traction systems, the technology is also positioned to support applications such as solid-state circuit breakers, EV charging infrastructure, and industrial power conversion systems that require high efficiency and high-temperature operation.
A key focus of the new platform is increasing current capability within a given silicon carbide die area. Wolfspeed reports that Gen 5-based systems can achieve the highest current levels at elevated operating temperatures when compared with competing silicon carbide MOSFETs using a 5 x 5 mm footprint.
The company has further optimized RDS(ON), addressing two critical design challenges. First, the technology reduces system-level conduction losses through an improvement in specific on-resistance of up to 27% compared with currently available competitive 1200 V silicon carbide solutions. The 1200 V QEM50120-025D10 achieves a chip-level RSP of 3.4 mΩ-cm² at 175°C, while the 750 V QEM50075-025D10 achieves a chip-level RSP of 2.0 mΩ-cm² at the same temperature.
Second, the platform reduces the need for additional system-level design margin through an ultra-low RDS(ON) distribution of ±18% across both voltage classes.
Gen 5 retains the body diode architecture introduced with the previous generation while extending continuous junction temperature capability to 200°C, with limited-life operation supported up to 215°C. Wolfspeed stated that the devices maintain low on-resistance while delivering excellent switching performance and reduced overall switching losses through further improvements in reverse recovery charge characteristics.
The company emphasized that Gen 5 has been developed on a commercially mature manufacturing platform designed to provide a low-risk path from design qualification to high-volume production. This marks the second Wolfspeed MOSFET technology generation to be designed, manufactured, and qualified within the company’s 200 mm device fabrication facility in Mohawk Valley, New York.
All new product introductions, sampling activities, and customer validation programs will utilize 200 mm production material, with no additional manufacturing toolsets required for volume production.
“Our planar MOSFET technology continues to offer significant opportunities for innovation,” said Dr. Adam Barkley, Vice President of Power Device and Package Development at Wolfspeed. “Gen 5 was developed using familiar manufacturing processes and tools to provide customers with a low-risk upgrade path for next-generation programs. This approach enables faster validation, qualification, and time-to-market while maintaining the performance and reliability customers expect.”
Samples of the QEM50120-025D10 and QEM50075-025D10 devices are currently available to select customers through Wolfspeed’s direct sales channels. The company expects to introduce additional 750 V and 1200 V Gen 5 products throughout 2026 and into early 2027 based on customer requirements and market demand.
Original – Wolfspeed
-
Nexperia B.V. and Semikron Danfoss GmbH have signed a Memorandum of Understanding (MoU) to explore a strategic collaboration focused on silicon carbide (SiC)-based power modules for automotive traction inverter applications. The initiative aims to combine Nexperia’s expertise in SiC semiconductor technology with Semikron Danfoss’ capabilities in power module packaging and integration to evaluate the development of high-performance, scalable solutions for next-generation electric vehicles.
As the automotive industry continues to increase the adoption of SiC technology in electric drivetrains, the demand for solutions that improve efficiency, power density, and overall vehicle performance continues to grow. Through this collaboration, the two companies intend to leverage their complementary strengths across the value chain, from semiconductor devices to fully integrated power modules, to address the evolving requirements of automotive applications.
The companies will explore joint engineering approaches, including early-stage integration and co-design methodologies, with the objective of maximizing the performance potential of SiC-based power systems.
Commenting on the agreement, Carsten Götte, Senior Vice President of the Automotive Power Modules Division at Semikron Danfoss, said the combination of Nexperia’s semiconductor expertise and Semikron Danfoss’ module capabilities creates an opportunity to explore solutions that could deliver additional value to customers in the rapidly developing electric vehicle market.
Edoardo Merli, Senior Vice President and Head of the Wide Bandgap, IGBT & Modules (WIM) Business Group at Nexperia, highlighted the importance of industry partnerships in advancing the adoption of wide-bandgap technologies such as SiC and gallium nitride (GaN). He noted that Nexperia’s ongoing investments in research and development, together with a focus on early-stage collaboration, support the alignment of semiconductor and system requirements from the outset of product development.
The Memorandum of Understanding was signed on June 8, 2026, by Stefan Tilger, Nexperia’s Interim Chief Executive Officer, and Carsten Götte, Senior Vice President of the Semikron Danfoss Automotive Power Modules Division.
Both companies share strong European roots and extensive experience in the power electronics industry, providing a foundation for exploring future opportunities in automotive power semiconductor and module technologies.
Original – Semikron Danfoss
