Toshiba Electronic Devices & Storage Corporation has started mass production of three 40 V N-channel MOSFETs using SOP Advance(WF) package for automotive and has expanded its lineup. The three models are “XPHR9904PS, XPH2R404PS and XPH3R304PS.”

The new products reduce drain-source On-resistance with the U-MOSIX process as with Toshiba’s precedence release products XPHR7904PS and XPH1R104PS. The drain-source On-resistance of XPH2R404PS is 2.4 mΩ (max), which is approximately 27 % lower than that of Toshiba’s existing product TPCA8083, and XPH3R304PS is 3.3 mΩ (max), which is approximately 42 % lower than that of Toshiba’s existing product TPCA8085.

The drain-source On-resistance of XPHR9904PS is 0.99 mΩ (max). Reducing drain-source On-resistance of these products contributes to low power consumption of automotive equipment. In addition, they are qualified with the automotive reliability standard AEC-Q101. The PPAP of IATF16949 is also available.

The package is a surface mount type SOP Advance(WF) that uses a wettable flank terminal structure, which facilitates automated visual inspection of the board mounting state.

Toshiba’s automotive MOSFETs support a variety of automotive applications and meet a wide range of customer needs.


  • Automotive equipment: motor drives, switching power supplies, load switches, etc.


  • Low On-resistance
    XPHR9904PS: RDS(ON)=0.99 mΩ (max) (VGS=10 V)
    XPH2R404PS: RDS(ON)=2.4 mΩ (max) (VGS=10 V)
    XPH3R304PS: RDS(ON)=3.3 mΩ (max) (VGS=10 V)
  • AEC-Q101 qualified
  • PPAP of IATF16949 available

Original – Toshiba