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Wolfspeed has received a conditional commitment for up to $1.5 billion in long-term financing from the U.S. Department of War’s Office of Strategic Capital to support domestic development and production of silicon carbide materials and wide-bandgap power devices.
The proposed financing would take the form of a senior secured delayed-draw term loan facility with a 30-year tenor. Funding remains subject to due diligence, negotiation and execution of definitive agreements, government approvals, appropriations, third-party consents and other closing conditions.
Wolfspeed plans to use the financing for a multi-year program covering SiC materials and power devices as well as expanded gallium nitride capabilities. The program includes strengthening domestic SiC materials and power-device production and establishing, expanding or onshoring low- and high-voltage GaN power device manufacturing capabilities.
The company also plans to upgrade its GaN epitaxy capabilities for next-generation communications infrastructure and electronic warfare systems. Additional work would include advancing GaN-on-SiC RF epitaxial wafer technology and developing domestic radiation-hardening capabilities for existing SiC products and future GaN devices.
The program would build on Wolfspeed’s existing U.S. manufacturing operations in North Carolina, New York and Arkansas. The technologies covered by the proposed financing target applications across defense, aerospace, communications and other power and RF systems.
As part of the potential financing, Wolfspeed would be required to issue warrants to the Department of War representing up to 7.5% of the company’s fully diluted equity. The VWAP-based warrants would be issued proportionally as individual financing tranches are funded.
The $1.5 billion commitment remains conditional and does not guarantee that Wolfspeed will receive the financing. The company said definitive agreements have not yet been executed and that completion remains dependent on the required financial, legal, investment and regulatory conditions.
Original – Wolfspeed
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Toshiba Electronic Devices & Storage has developed a gate formation technology that reduces threshold voltage drift during long-term operation of trench-gate silicon carbide MOSFETs. The company presented details of the technology at ICSCRM 2026 in Yokohama, Japan.
Threshold voltage drift can occur when positive or negative voltage stress is repeatedly applied to the gate of a SiC MOSFET. Changes in threshold voltage can affect stable device operation and increase conduction losses, making the effect an important reliability consideration for trench-gate SiC devices.
Toshiba investigated the relationship between threshold voltage drift and the interface treatment used during formation of the gate oxide in the trench region. Its evaluation found that the magnitude of the drift varied significantly depending on nitridation conditions and other interface treatment parameters.
Further analysis indicated that charge traps generated during the interface treatment contributed to threshold voltage changes under repeated positive and negative gate stress. Toshiba subsequently optimized the gate oxide interface treatment and other process parameters to reduce the effect while maintaining low on-resistance.
Using the resulting gate formation process, Toshiba reduced threshold voltage drift to approximately 50% of the level measured in commercially available trench-gate SiC MOSFETs, according to the company.
The technology has already been applied to Toshiba’s TW007D120E, a 1200V trench-gate SiC MOSFET for which test sample shipments began in May 2026. Toshiba plans to extend the process to additional SiC MOSFET products.
The technology targets power conversion applications requiring both low losses and long-term reliability, including electric vehicles, renewable energy systems and data center power supplies. The development was based on results from project JPNP21029, supported by Japan’s New Energy and Industrial Technology Development Organization.
Original – Toshiba
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Infineon Technologies will supply silicon carbide power devices to Eaton for its MVSST 2.0 medium-voltage solid-state transformer platform. The system is designed for deployment across the Asia-Pacific region and targets emerging 800VDC power distribution architectures for AI data centers.
Eaton’s MVSST 2.0 is designed to connect high-density computing infrastructure to the electricity grid while reducing the number of power conversion stages compared with conventional architectures. The platform uses SiC power semiconductors to support higher conversion efficiency, increased power density and greater deployment flexibility.
The solid-state transformer targets the increasing power requirements of AI data centers, where medium-voltage power conversion and DC distribution are being evaluated to reduce conversion losses and simplify power delivery between the grid and computing infrastructure.
Eaton’s MVSST 2.0 combines the company’s power distribution and conversion technology with Infineon’s SiC devices. According to the companies, the platform is among the first medium-voltage solid-state transformer systems to achieve IEC certification.
The collaboration initially focuses on Eaton’s 800VDC data center architecture and deployment in APAC. The companies are also evaluating future solid-state transformer platforms using 2.3kV and 3.3kV SiC power modules.
These higher-voltage SiC modules are being considered for future AI data center power systems as well as grid modernization and renewable energy applications, with the objective of supporting higher system voltages, improved conversion efficiency and increased system reliability.
Original – Infineon Technologies
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LATEST NEWS / PRODUCT & TECHNOLOGY / PROJECTS / SiC / TOP STORIES / WBGSeptember 29, 2026
2 Min ReadNavitas Semiconductor has been selected by the U.S. Army for the ALATTIS program to develop and validate next-generation 10kV silicon carbide power semiconductor technology. The project will focus on SiC insulated-gate bipolar transistors and associated PiN diode technologies for high-power defense and infrastructure applications.
ALATTIS, or Accelerated, Large-Area, 10kV SiC IGBT, is intended to establish a domestic manufacturing process for ultra-high-voltage SiC devices rated at 10kV and above. The program will involve iterative device design, fabrication, testing and process validation.
The project is sponsored by the Army Research Laboratory, part of the U.S. Army Combat Capabilities Development Command, and is supported by the Joint Experimentation and Technology Accelerator. Its objective includes developing a U.S.-based manufacturing process for 10kV SiC IGBTs that is not currently available domestically, according to Navitas.
Navitas plans to develop the 10kV SiC IGBTs using its patented trench-assisted planar (TAP) architecture and integrate the devices with high-voltage SiC PiN diode technology. The resulting devices are intended for mission-critical systems requiring high-voltage and high-power switching.
The company’s existing GeneSiC portfolio spans voltage ratings from 650V to 6.5kV and includes SiC MOSFETs based on its TAP architecture. Navitas said the portfolio is supported by a U.S.-anchored engineering, manufacturing and supply chain infrastructure.
Navitas has previously developed several ultra-high-voltage SiC devices, including 6.5kV SiC thyristors in 2010, 10kV to 15kV SiC PiN diodes in 2012 and commercially released 6.5kV SiC MOSFETs in 2021.
The ALATTIS project will extend the company’s development activities beyond SiC MOSFETs into 10kV-class SiC IGBTs, with fabrication and testing forming part of the program’s effort to establish a validated domestic manufacturing process.
Original – Navitas Semiconductor
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Wolfspeed has introduced a Premium 200mm n-type silicon carbide substrate, expanding its 200mm SiC materials portfolio with a higher-quality wafer designed to reduce defects and improve wafer-shape stability for SiC device manufacturing.
The new substrate targets the increasing material-quality requirements associated with higher-voltage SiC devices and larger die sizes. Wolfspeed has focused on reducing micropipe density and threading screw dislocations while improving wafer shape and lot-to-lot consistency.
The Premium 200mm substrate specifies a micropipe density below 0.01/cm², corresponding to fewer than three micropipes per wafer. The specification is validated using X-ray topography and is accompanied by reduced levels of threading screw dislocations.
According to Wolfspeed, the improved bare-wafer characteristics can also support better epitaxial performance without requiring customers to modify their existing epitaxy processes. Reduced variability in the starting substrate is intended to improve device yield and manufacturing consistency.
The company is positioning the substrate for manufacturers developing increasingly large and high-voltage SiC devices, where crystallographic defects can affect the number of usable devices produced from each wafer.
Wolfspeed has operated its 200mm SiC manufacturing processes continuously since 2022 and said the platform has undergone more than four years of process refinement and yield improvement. The company has allocated dedicated manufacturing capacity to the new premium substrate and plans further expansion of the product family.
The Premium 200mm n-type SiC substrate is commercially available and can be ordered now.
Original – Wolfspeed
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Bosch has developed its silicon carbide S-Cell, a standardized power semiconductor unit designed for PCB-embedded power modules targeting automotive, industrial and renewable energy applications. The technology combines Bosch SiC trench MOSFETs with an embedded PCB architecture to support higher power density and reduced electrical parasitics.
The S-Cell is based on Bosch’s SiC trench MOSFET technology and covers 750V and 1200V voltage classes. Each standardized power unit measures 11 × 11mm² and features top-side copper metallization optimized for integration directly into PCB-based power module structures.
The standardized format is designed to support different module configurations and circuit topologies while allowing multiple S-Cells to be incorporated into scalable power module platforms. Bosch said the dimensions are aligned with established industry design formats to simplify integration and development from initial prototypes toward production-ready designs.
Embedding the power semiconductor within the PCB shortens electrical current paths and reduces parasitic inductance compared with conventional module packaging. Lower inductance can reduce voltage overshoot and switching losses while supporting faster switching, particularly in systems operating with high DC bus voltages.
The architecture also provides additional flexibility for thermal management and electrical interconnection. Bosch is targeting applications requiring high-current and high-voltage operation while balancing switching performance, electromagnetic compatibility and thermal stability.
Bosch is applying a vertically integrated development approach to the S-Cell, covering SiC chip design and fabrication, copper metallization, sintering and PCB integration. This allows parameters including chip structures, sintering materials, copper component tolerances and embedding processes to be coordinated during development.
Reliability evaluation includes electrical characterization and testing based on relevant AEC-Q101 requirements. Bosch is also evaluating interactions between the SiC chip, electrical contacts, PCB embedding and thermal interfaces as part of system-level qualification and development.
The S-Cell is intended for applications including electric vehicle traction inverters and industrial power converters. Bosch plans to combine the embedded architecture with its third-generation SiC bare-die technology for systems requiring compact dimensions, high power density, reduced losses and improved thermal performance.
Original – Bosch
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Toshiba Electronic Devices & Storage has expanded its silicon carbide power module portfolio with the IX800FXF2YMS4, a 3300V dual SiC MOSFET module targeting railway, renewable energy and industrial power conversion applications.
The module incorporates Toshiba’s third-generation SiC MOSFET chips and is rated for a drain current of 800A. It also specifies an I²t limit of 300kA²s for the diode section, indicating its surge current capability under abnormal operating conditions. The rating is specified at an initial channel temperature of 175°C using a 10ms half-sine-wave pulse.
The IX800FXF2YMS4 has a typical drain-source on-voltage of 1.4V at 800A, a gate-source voltage of 20V and a channel temperature of 25°C. The low on-voltage is designed to reduce conduction losses in high-power systems.
Toshiba specifies typical turn-on switching losses of 185mJ and turn-off losses of 175mJ. These figures are measured at a DC supply voltage of 1800V, drain current of 800A and channel temperature of 175°C, with gate voltages of +20V and -6V.
The module uses Toshiba’s iXPLV package and silver-sintered bonding for the SiC chips. The bonding technology is intended to improve thermal resistance and reliability at elevated temperatures, allowing the device to support a maximum channel temperature of 175°C.
Target applications include railway traction inverters and converters, renewable energy generation systems, industrial motor controls and power conversion equipment. The latter includes solid-state transformers, uninterruptible power supplies and energy storage systems.
The IX800FXF2YMS4 expands Toshiba’s iXPLV SiC MOSFET module portfolio to four products, providing additional voltage and current options for industrial power conversion designs.
Original – Toshiba
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L&T Semiconductor Technologies (LTSCT), a wholly owned subsidiary of Larsen & Toubro, unveiled 40 semiconductor products at SEMICON India 2026, spanning power semiconductors, analog and mixed-signal ICs, compute, connectivity and RF technologies.
The portfolio includes LTSCT’s first silicon carbide platform, based on a 1200V SiC MOSFET designed for high-power conversion applications. Target applications include EV fast chargers, microgrids, solid-state transformers and traction inverters.
LTSCT also showcased its first internally developed SiC power modules and devices alongside a broader power discrete portfolio covering MOSFETs, diodes and bridge rectifiers.
Another milestone presented at the event was the tape-out of a BLDC motor controller designed entirely in India. The highly integrated device incorporates protection functions and uses a flexible architecture intended to support multiple product models from a common platform. LTSCT is initially targeting energy-efficient BLDC ceiling fan applications, with the design intended to reduce bill-of-materials requirements.
The company’s analog and mixed-signal portfolio included the BLDC controller as well as an internally designed USB-C GaN charger. Its compute products included an indigenous Vision Camera SoC combining image processing with on-device AI acceleration and a Secure Identity Platform incorporating hardware-based security and cryptographic acceleration for applications including e-passports, payment cards and national identification systems.
In connectivity and RF, LTSCT presented four internally designed modules targeting smart metering, automotive and digital payment applications. These included its LCC43 Dynamic QR and Soundbox proof of concept for the National Payments Corporation of India’s proposed Trusted Device Layer.
The 40-product portfolio is focused on three areas identified by LTSCT: national security, digital sovereignty and energy resilience. Applications span secure identity, intelligent surveillance, IP cameras, communications infrastructure, data centers, AI infrastructure and power conversion.
LTSCT said it is working to move its semiconductor designs toward scalable production and commercial deployment through collaboration with India’s semiconductor manufacturing ecosystem.
Original – L&T Semiconductor Technologies
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ROHM Semiconductor has announced that its silicon carbide power semiconductor technology is being used in BMW Group’s Neue Klasse electric vehicle platform, supporting power conversion within the vehicles’ electric powertrain systems.
ROHM’s SiC MOSFET chips are integrated into BMW’s sixth-generation electric vehicle technology. The devices are designed to provide high-efficiency power switching while operating under the demanding electrical and thermal conditions associated with automotive traction systems.
The SiC components support key power electronics functions within the electric powertrain. Their use is intended to reduce power conversion losses and contribute to vehicle energy efficiency, driving range and charging performance.
ROHM has been developing and manufacturing SiC and other power semiconductor technologies for automotive applications, working with vehicle manufacturers and Tier 1 suppliers on electrified powertrain systems.
The deployment in Neue Klasse extends ROHM’s involvement in automotive SiC applications, with the company supplying its SiC MOSFET technology for BMW’s latest generation of electric vehicles.
Original – ROHM
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Resonac has successfully grown and processed a 300mm (12-inch) silicon carbide single crystal, marking a development milestone in the company’s work on larger-diameter SiC substrates and epitaxial wafers.
The 300mm wafer represents one of the largest SiC substrate sizes currently under development. Resonac achieved the result using its existing expertise in SiC single-crystal growth and substrate processing, together with technology developed through Japan’s Green Innovation Fund Program.
Resonac currently supplies primarily 150mm SiC epitaxial wafers, which remain the mainstream wafer size for SiC power semiconductor manufacturing. The company has also started shipments of 200mm SiC epitaxial wafers as the industry moves toward larger wafer diameters.
SiC is used in power semiconductor devices because of its ability to reduce power-conversion losses and heat generation compared with conventional silicon-based devices. Applications include electric vehicles, renewable energy systems and power supplies for data centers.
Beyond power devices, Resonac is evaluating opportunities for single-crystal SiC in thermal-management and semiconductor packaging applications. The material’s high thermal conductivity could support its use as a heat-spreading or advanced packaging substrate for AI servers and high-performance computing systems.
Resonac also identified AR smart glasses as another potential application for SiC substrates, where the material’s high refractive index could be used in optical components.
The 300mm development is part of Resonac’s ongoing work to increase the diameter and improve the quality of its SiC single-crystal substrates and epitaxial wafers.
Original – Resonac
