-
Mitsubishi Electric Corporation will begin shipping samples on January 21 of four new trench silicon carbide MOSFET bare dies for power electronics equipment, including electric-vehicle traction inverters, onboard chargers, and power supplies for renewable energy such as solar. The new bare dies are designed to help embed advanced SiC devices directly into systems to lower power consumption while maintaining performance.
The devices will be showcased at the 40th Nepcon Japan R&D and Manufacturing show in Tokyo from January 21–23, with additional exhibitions planned in North America, Europe, China, India and other regions.
Growing decarbonization efforts are expanding the market for high-efficiency power electronics. Demand is rising for power semiconductors that enable EV traction inverters and renewable-energy systems to cut losses while preserving performance and quality.
Since 2010, Mitsubishi Electric has shipped SiC power modules that reduce energy use in air conditioners, industrial equipment and railway inverters. To meet the shift toward advanced bare-die integration, the company is introducing four new trench SiC-MOSFET bare dies that leverage a proprietary trench structure to cut power loss by approximately 50% versus planar SiC-MOSFETs. Proprietary manufacturing, including Mitsubishi Electric’s gate oxide film process, suppresses variation in power loss and on-resistance, supporting stable, long-term quality.
Original – Mitsubishi Electric
-
Wolfspeed, Inc. announced successful production of a single-crystal 300 mm (12-inch) silicon carbide wafer. Backed by one of the industry’s largest silicon carbide IP portfolios—more than 2,300 issued and pending patents worldwide—the company is pioneering the transition to 300 mm and setting a path toward future volume commercialization.
The advance represents a meaningful step for next-generation computing platforms, immersive AR/VR systems, and high-efficiency power devices. By extending silicon carbide to 300 mm, Wolfspeed is opening new performance thresholds and manufacturing scalability for demanding semiconductor applications.
“Producing a 300 mm single crystal silicon carbide wafer is a significant technology achievement and the result of years of focused innovation in crystal growth, boule and wafer processing,” said Elif Balkas, Chief Technology Officer at Wolfspeed. “It positions Wolfspeed to support the industry’s most transformative technologies, especially critical elements of the AI ecosystem, immersive augmented and virtual reality systems, and other advanced power device applications.”
Wolfspeed’s 300 mm platform is designed to unify high-volume silicon carbide manufacturing for power electronics with advanced capabilities in high-purity semi-insulating substrates used in optical and RF systems. This convergence enables a new class of wafer-scale integration across optical, photonic, thermal, and power domains.
As AI workloads drive data centers toward their power limits, the 300 mm silicon carbide platform will help integrate high-voltage power delivery, advanced thermal solutions, and active interconnects at wafer scale—pushing system performance beyond conventional transistor scaling. In AR/VR, silicon carbide’s material properties—including mechanical strength, thermal conductivity, and optical refractive control—support compact, lightweight architectures that pair high-brightness displays with effective thermal management.
Beyond AI and AR/VR, moving silicon carbide to 300 mm enhances the ability to scale production of advanced power devices for applications such as high-voltage grid transmission and next-generation industrial systems, improving economics and long-term supply assurance.
“This 300 mm breakthrough is more than a technical milestone—it unlocks new opportunities for silicon carbide as a strategic material,” said Poshun Chiu, Principal Analyst, Compound Semiconductor, Yole Group. “It clearly demonstrates that silicon carbide is advancing to the next level of manufacturing maturity required for the coming decade of electrification, digitalization, and AI, and provides the market with a credible roadmap toward higher-volume production, improved economics and long-term supply assurance.”
Original – Wolfspeed
-
Fuji Electric Co., Ltd. announced an agreement with Robert Bosch GmbH (Bosch) to collaborate on silicon carbide (SiC) power semiconductor modules for electric vehicles featuring package compatibility. The partnership targets faster design cycles for automakers and greater flexibility in sourcing as EV adoption accelerates.
SiC devices are increasingly used in EV inverter systems for their high breakdown voltage and low loss, enabling smaller, lighter, and more efficient powertrains that extend driving range. Fuji Electric’s SiC modules leverage proprietary packaging to deliver high power density and efficiency, with flexible chip sizing and counts to meet a wide spectrum of power requirements and circuit configurations.
Under the collaboration, the companies plan to develop SiC modules with mechanical compatibility—aligned package outer dimensions and terminal positions—so either module can be integrated into an inverter without additional mechanical changes. This approach is intended to shorten design timelines and diversify procurement, allowing customers to use modules from both suppliers without altering inverter specifications.
Fuji Electric and Bosch also plan joint development of application technologies related to cooler design and terminal connections for SiC module integration, and will provide technical support to customers. The initiative aims to enhance supply chain stability and further promote the adoption of electric vehicles.
Original – Fuji Electric
-
Wolfspeed Inc. announced that its automotive MOSFETs will power onboard charger systems for Toyota Battery Electric Vehicles. The adoption underscores Toyota’s confidence in Wolfspeed’s ability to meet stringent quality and long-term reliability requirements.
“Toyota is known for its uncompromising approach to quality and reliability, and we’re honored to be supporting their next wave of electrification,” said Robert Feurle, Chief Executive Officer. “Wolfspeed’s U.S.-based supply chain and domestic silicon carbide manufacturing footprint ensure the stability and continuity they need to achieve their electrification goals.”
Silicon carbide has become the industry standard for high-voltage onboard power systems as the automotive sector accelerates toward clean energy vehicles. Beyond enabling fast, efficient, high-power-density traction inverters, silicon carbide brings clear advantages to onboard automotive auxiliary power systems such as onboard chargers—supporting shorter charging times, reducing energy loss across the vehicle, improving driving range, and lowering recharge costs over the vehicle’s lifespan.
“Our work with Toyota is built upon years of trust in engineering expertise, supply reliability, as well as a shared obsession with quality,” said Cengiz Balkas, Chief Business Officer. “This reinforces our role in driving electrification with silicon carbide technology that delivers performance, efficiency and safety.”
Wolfspeed supports a broad range of EV platforms directly with OEMs and through Tier 1 partners, making its technology a foundational element of the expanding EV ecosystem.
Original – Wolfspeed
-
Infineon Technologies AG introduced new package options for its CoolSiC™ MOSFET 750 V G2 technology, engineered to raise system efficiency and power density in automotive and industrial power conversion. The devices are available in Q-DPAK and D2PAK, with a portfolio offering typical RDS(on) values up to 60 mΩ at 25°C.
The extended lineup targets onboard chargers and HV-LV DCDC converters in automotive, as well as server and telecom SMPS and EV charging infrastructure on the industrial side. Ultra-low RDS(on) of 4 mΩ enables applications demanding exceptional static-switching performance, including eFuse, high-voltage battery disconnect switches, solid-state circuit breakers and solid-state relays—supporting more efficient, compact and reliable system designs.
A key differentiator is the top-side cooled Q-DPAK package, delivering optimal thermal performance and robustness for high-power use cases. The technology also achieves excellent RDS(on) × QOSS and best-in-class RDS(on) × Qfr, reducing switching losses in both hard- and soft-switching topologies and delivering superior efficiency in hard-switching conditions.
CoolSiC MOSFETs 750 V G2 combine a high threshold voltage VGS(th),typ of 4.5 V at 25°C with an ultra-low QGD/QGS ratio to reinforce robustness against parasitic turn-on (PTO). The platform supports extended gate-drive capability with static gate voltages down to -7 V and transient voltages down to -11 V, providing wider design margins and strong compatibility with other devices in the market.
Samples are available now: Q-DPAK in 4/7/20/33/40/50 mΩ and D2PAK in 7/25/33/40/50/60 mΩ.
Original – Infineon Technologies
-
SemiQ Inc has broadened its third-generation QSiC™ MOSFET portfolio with seven new power modules that deliver industry-leading current density and thermal performance. The launch adds high-current S3 half-bridge, B2T1 six-pack and B3 full-bridge options engineered to raise system efficiency, simplify cooling, and cut switching losses in next-generation EV chargers, energy storage systems and industrial motor drives.
The expanded lineup targets the rising demand for ultra-efficient power conversion. In the standard 62 mm S3 half-bridge format, current capability reaches up to 608 A with junction-to-case thermal resistance as low as 0.07°C/W. The B2T1 six-pack modules integrate a complete three-phase power stage in a compact housing with RDS(on) values from 19.5 to 82 mΩ to streamline layout and minimize parasitics in motor drives and advanced AC-DC converters. The B3 full-bridge devices offer up to 120 A with on-resistance down to 8.6 mΩ and thermal resistance of 0.28°C/W, maximizing power density and efficiency for single-phase inverters and high-voltage DC-DC applications.
Quality and reliability measures include wafer-level gate-oxide burn-in to assure gate integrity and breakdown voltage testing beyond 1350 V. Built on SemiQ’s Gen3 SiC technology, the new modules operate at 18 V/-4.5 V gate drive and reduce both RONsp and turn-off energy (EOFF) by up to 30% versus prior generations.
Commenting on the release, Dr. Timothy Han said that EV infrastructure and new industrial applications demand ever-higher performance, and that the Gen3 full-bridge, half-bridge and six-pack modules—with higher current density and significantly lower on-resistance—are designed to meet those requirements.
Product list:
GCMX020A120B2T1P — Six-Pack, B2, 1200 V, 30 A, 19.5 mΩ
GCMX040A120B2T1P — Six-Pack, B2, 1200 V, 30 A, 39 mΩ
GCMX080A120B2T1P — Six-Pack, B2, 1200 V, 29 A, 82 mΩ
GCMX008B120B3H1P — Full-Bridge, B3, 1200 V, 120 A, 8.6 mΩ
GCMX016B120B3H1P — Full-Bridge, B3, 1200 V, 95 A, 16.6 mΩ
GCMX2P3B120S3B1-N — Half-Bridge, S3, 1200 V, 608 A, 2.4 mΩ
GCMX3P5B120S3B1-N — Half-Bridge, S3, 1200 V, 428 A, 3.6 mΩKey benefits:
• Higher power density through industry-leading current ratings and low RDS(on)
• Lower thermal resistance to ease cooling and reduce system size and cost
• Integrated topologies (six-pack, full-bridge, half-bridge) to simplify layout and minimize parasitics
• Up to 30% reduction in RONsp and EOFF compared to previous generations
• Robust screening, including wafer-level gate-oxide burn-in and >1350 V breakdown verificationAvailability details, reference designs and application notes can be aligned to specific EV charging, ESS and industrial drive requirements.
Original – SemiQ
-
onsemi has introduced its EliteSiC MOSFETs in the industry-standard T2PAK top-cool package, offering improved thermal performance and design flexibility for high-power, high-voltage applications. Targeting sectors such as electric vehicles (EVs), solar energy infrastructure, and energy storage systems, the new solution addresses the growing demand for efficiency and compactness in power electronics.
The newly released 650V and 950V EliteSiC MOSFETs combine onsemi’s advanced silicon carbide technology with the thermally optimized T2PAK top-cool package, providing designers with a powerful tool for tackling thermal challenges in automotive and industrial systems. Initial devices are already shipping to lead customers, with additional variants scheduled for release beginning in Q4 2025.
The EliteSiC T2PAK package enables direct thermal transfer from the MOSFET to the system heatsink, bypassing limitations of PCB-based cooling. This configuration supports superior heat dissipation and lower junction temperatures, resulting in:
- Reduced thermal resistance and improved thermal efficiency
- Lower component stress and extended system reliability
- Higher power density in smaller footprints
- Simplified thermal design for faster product development cycles
Technical Highlights of the T2PAK Top-Cool Package:
- Supports RDS(on) values ranging from 12 mΩ to 60 mΩ
- Minimizes stray inductance for improved switching speeds and reduced energy losses
- Combines thermal and switching performance advantages of TO-247 and D2PAK formats
- Offers direct die-to-heatsink contact, eliminating PCB thermal bottlenecks
This packaging innovation allows engineers to design more compact and thermally optimized systems, helping to meet the efficiency requirements of modern power applications in EV powertrains, solar inverters, industrial drives, and high-performance chargers.
With the integration of EliteSiC technology and the top-cool T2PAK format, onsemi continues to expand its capabilities in delivering advanced silicon carbide solutions for next-generation power electronics.
Original – onsemi
-
X-FAB is streamlining the development of advanced silicon carbide (SiC) power devices through its latest XbloX platform. This modular, scalable platform enables SiC device designers to transition from prototyping to full-scale production significantly faster—achieving production ramp-up up to nine months ahead of traditional development methods.
The third generation of the XbloX platform (XSICM03) introduces advanced capabilities tailored for high-performance planar SiC MOSFETs. It reduces cell pitch and improves on-state resistance, which enables up to 30% more dies per wafer and supports compact, efficient power device designs. The platform is optimized for high-growth sectors such as automotive, industrial automation, energy, and datacenter infrastructure, where next-generation SiC MOSFETs are in high demand.
XbloX provides two key benefits for device developers: first, X-FAB takes ownership of core process development activities by offering a Process Installation Kit (PIK) that contains pre-qualified process modules and implant recipes. Second, the standardized and modular configuration of the platform transforms wafer manufacturing into a scalable process, moving beyond the limitations of customer-specific production models.
The result is a dramatic reduction in development time, risk, and engineering resources. Customers benefit from an accelerated onboarding process—up to six times faster than conventional methods—and a guided approach that simplifies design, mask tooling, and process selection. Once process blocks are selected, XbloX automatically generates an integrated process flow that incorporates quality controls, business systems, and commercial terms.
“Thanks to a PIK, qualified SiC process development modules, and an automated onboarding process, customers need do little more than access our global hotline for support on block selection and deployment,” said Brian Throneberry, Business Director SiC Foundry at X-FAB. “We have robust rules in place to help guide design, mask tooling, engagement, and so on. Once the selection is finalized, XbloX automatically generates the process flow, which subsequently integrates quality systems, business functions, and commercial aspects for the customer.”
The XSICM03 platform continues to build on X-FAB’s leadership in wide-bandgap semiconductor manufacturing by aligning SiC process integration with CMOS-modeled specifications, design rules, and control plans. Customers will also benefit from future advancements as new modules are added to the XbloX ecosystem.
By offering a standardized, high-performance, and highly scalable solution for SiC device manufacturing, X-FAB’s XbloX platform positions itself as a strategic enabler for fabless power semiconductor developers aiming to accelerate time to market and expand product portfolios efficiently.
Original – X-FAB
-
ROHM has commenced mass production of its SCT40xxDLL series silicon carbide (SiC) MOSFETs in TO-Leadless (TOLL) packages, offering a significant 39% improvement in thermal performance compared to conventional TO-263-7L packages with equivalent voltage ratings and on-resistance. The new series is designed to meet the growing demand for compact, high-power components in applications such as AI server power supplies and energy storage systems (ESS), where power density and miniaturization are increasingly critical.
As modern industrial and consumer equipment evolves, applications such as compact photovoltaic (PV) inverters and high-efficiency server systems face dual requirements: increasing power capability and reduced system size. This is especially true for power factor correction (PFC) circuits in slim-profile “pizza box” server power supplies, where discrete semiconductors must conform to strict thickness constraints of 4 mm or less.
ROHM’s SCT40xxDLL series responds to these requirements with a compact 2.3 mm low-profile form factor—approximately 50% thinner than traditional equivalents—and a reduced component footprint by about 26%. The series also distinguishes itself with a rated drain-source voltage of up to 750 V, surpassing the standard 650 V found in many TOLL package MOSFETs. This higher voltage rating contributes to increased surge voltage tolerance, lower gate resistance requirements, and reduced switching losses.
The SCT40xxDLL lineup includes six models with typical on-resistance values ranging from 13 mΩ to 65 mΩ. Maximum current ratings span up to 120 A, depending on the device, making them suitable for a wide range of high-performance power conversion systems. Mass production began in September 2025.
SCT40xxDLL Series Overview:
Part Number VDSS Max (V) RDS(on) Typ (mΩ) ID Max (A) PD Max (W) Storage Temp (°C) SCT4013DLL 750 13 120 405 -40 to +175 SCT4020DLL 750 20 80 277 -40 to +175 SCT4026DLL 750 26 61 214 -40 to +175 SCT4036DLL 750 36 46 164 -40 to +175 SCT4045DLL 750 45 37 133 -40 to +175 SCT4065DLL 750 65 26 100 -40 to +175 These devices are suitable for use in:
- Industrial power supplies for AI servers and data centers
- Photovoltaic inverters and ESS
- General-purpose consumer power supply applications
ROHM also provides simulation models for all six variants via its official website to assist engineers with rapid circuit evaluation and design. The SCT40xxDLL series is available through authorized distributors.
Original – ROHM
-
Infineon Technologies AG has announced that it will supply customized silicon carbide (SiC) power modules to Electreon, a leader in wireless electric vehicle (EV) charging technology. These modules will be integrated into Electreon’s dynamic in-road wireless charging infrastructure, which enables EVs to charge while driving via inductive power transfer.
Electreon’s wireless electric road system (wERS) embeds copper coils beneath road surfaces, transferring energy to vehicles in motion—such as trucks, buses, and passenger cars—without the need to stop and plug in. The coils are connected to the power grid and are activated when a compatible vehicle passes overhead. Infineon’s SiC modules serve as the core component of this system, efficiently converting grid power into inductive charging energy. This enables reliable, seamless, and energy-efficient charging in high-traffic zones including highways, ports, and mobility hubs like airports.
The customized EasyPACK™ 3B CoolSiC™ 2000 V modules developed by Infineon have been tailored to meet Electreon’s unique requirements. These modules support continuous power transfer with an average output of 200 kW and peak capabilities exceeding 300 kW. Their performance was validated during a recent deployment on France’s A10 highway, marking the world’s first highway to provide dynamic wireless charging for various types of electric vehicles in motion.
By enabling on-the-move charging, the system significantly reduces EV battery size requirements, leading to lower upfront vehicle costs, reduced weight, and increased cargo capacity. Electreon has already deployed Infineon’s customized modules in test installations across the U.S., Germany, France, Norway, Portugal, Sweden, Italy, Israel, and Japan, with plans for broader integration in long-distance routes.
“Electreon’s wireless charging system is a real game changer on the road to reducing carbon emissions in transportation,” said Dominik Bilo, Executive Vice President and Chief Sales Officer Industrial & Infrastructure at Infineon Technologies. “We’re proud to contribute to this groundbreaking innovation with our customized SiC power modules, which efficiently convert electrical energy to charge vehicles on the go, tailored to meet Electreon’s specific needs.”
“Wireless EV charging is already happening today, and Electreon is at the forefront of this transformation,” added Electreon CEO Oren Ezer. “We’re using Infineon’s advanced silicon carbide technology to make in-road charging even more powerful and efficient, allowing electric buses and trucks to operate continuously without relying on traditional charging stations.”
Silicon carbide semiconductors have become instrumental in high-power applications like EV charging due to their ability to operate at higher frequencies with reduced energy loss, support more compact system designs, and perform reliably under extreme environmental conditions. With this collaboration, Infineon and Electreon are advancing the adoption of scalable, clean, and efficient mobility infrastructure worldwide.
Original – Infineon Technologies
