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Micro Commercial Components (MCC) has expanded its silicon carbide portfolio with the SIC1065G5M-BP, a 650 V, 10 A silicon carbide (SiC) Schottky Barrier Diode (SBD) designed for high-efficiency power conversion applications. Utilizing advanced Merged PiN Schottky (MPS) technology, the device combines zero reverse recovery, low forward voltage, and high-temperature operation to reduce switching losses and improve system efficiency in industrial and energy applications.
As switching frequencies continue to increase in modern power converters, conventional silicon rectifiers become a significant source of switching losses. The SIC1065G5M-BP addresses this challenge by eliminating reverse recovery current, enabling cleaner, more efficient operation in high-frequency power conversion systems.
The device is particularly well suited for applications where efficiency, thermal performance, and reliability are critical.
The diode is built using Merged PiN Schottky (MPS) technology, combining the low-loss characteristics of a Schottky diode with improved surge current capability.
Key electrical features include:
- 650 V reverse voltage rating
- 10 A average forward current
- Maximum forward voltage of 1.7 V
- Zero reverse recovery current
- 60 A non-repetitive surge current capability
The absence of reverse recovery charge significantly reduces switching losses, making the device suitable for high-frequency converter topologies.
The SIC1065G5M-BP supports junction temperatures of up to 175°C, enabling reliable operation in thermally demanding environments while simplifying cooling system design.
Packaged in the industry-standard TO-220AC package, the device provides straightforward heatsink attachment and effective thermal management for higher-power applications.
The new SiC Schottky Barrier Diode is designed for a range of high-efficiency power conversion systems, including:
- Solar inverters
- Power factor correction (PFC) circuits
- Motor drives
- EV charging infrastructure
- Industrial power supplies
Original – Micro Commercial Components
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Infineon Technologies has partnered with ADVANTICS to supply its 1200 V CoolSiC™ MOSFETs and dual-channel EiceDRIVER™ 2EDB9259Y gate drivers for a new generation of liquid-cooled silicon carbide power converters. The collaboration targets high-power applications including megawatt charging systems (MCS) for heavy-duty electric vehicles and marine vessels, as well as battery energy storage systems (BESS), DC microgrids, and AI data center power infrastructure.
The growing electrification of heavy-duty transport requires charging infrastructure capable of delivering significantly higher power levels than conventional fast chargers. Megawatt Charging Systems (MCS) enable substantially shorter charging times for commercial trucks, mining equipment, and marine vessels, helping reduce operational downtime and accelerate the transition toward zero-emission transportation.
Infineon’s silicon carbide power semiconductors provide the efficiency and power density needed to support these next-generation charging platforms.
ADVANTICS’ new converter platform is built around 100 kW liquid-cooled power modules, allowing systems to be scaled into the megawatt range.
Key platform features include:
- Modular 100 kW building blocks
- Scalable to megawatt-class systems
- Bidirectional power conversion
- Wide operating voltage up to 1500 V
- Peak efficiency of up to 98.5%
- Liquid-cooled thermal management
The architecture supports seamless integration with electrical grids, battery storage systems, and high-power EV charging infrastructure.
The platform utilizes:
- Infineon CoolSiC™ 1200 V MOSFETs
- EiceDRIVER™ 2EDB9259Y dual-channel gate drivers
Together, these devices enable:
- Higher conversion efficiency
- Increased power density
- Reduced system losses
- Improved reliability
- More compact converter designs
Silicon carbide technology also enables higher switching frequencies, reducing passive component size while improving overall system performance.
The jointly developed platform addresses a wide range of high-power applications, including:
- Megawatt Charging Systems (MCS)
- Heavy-duty electric trucks
- Electric marine vessels
- Battery energy storage systems (BESS)
- DC microgrids
- AI data center power infrastructure
- Grid-connected industrial power systems
By combining Infineon’s wide-bandgap semiconductor portfolio with ADVANTICS’ expertise in high-power converter design, the collaboration aims to accelerate deployment of efficient, scalable power conversion systems for sectors that have traditionally been difficult to electrify.
The partnership reflects the increasing adoption of silicon carbide technology in megawatt-scale power electronics, where high efficiency, high power density, and reliable operation are essential for next-generation charging infrastructure and energy systems.
Original – Infineon Technologies
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Toshiba Electronic Devices & Storage Corporation has developed a new silicon carbide (SiC) power module technology for high-frequency inverter applications that delivers lower power losses and enhanced reliability. The technology combines Toshiba’s proprietary Schottky barrier diode (SBD)-embedded SiC MOSFET with an optimized module design to achieve highly reliable and low-loss operation during high-speed switching.
According to simulation results, the new technology can reduce total inverter power losses by approximately 30% during 60 kHz high-frequency operation compared with power modules utilizing conventional SBD-embedded SiC MOSFET structures.
The rapid adoption of artificial intelligence and the continued expansion of data center infrastructure are driving significant increases in electricity consumption. As a result, power systems are under growing pressure to deliver higher efficiency and greater power density. This trend is increasing the importance of power semiconductors capable of operating at higher switching frequencies, particularly in critical applications such as inverters and uninterruptible power supplies (UPS), where both efficiency and compactness are key requirements.
Within this environment, 1200 V-class SiC power modules are expected to play a central role in next-generation power systems. However, further advances in both semiconductor devices and module design are required to fully realize their potential.
Toshiba has previously addressed reliability challenges associated with diode conduction in SiC devices through the development of SBD-embedded SiC MOSFET technology. Conventional structures, however, impose limitations on the layout of channel and SBD regions, making it difficult to simultaneously achieve low on-resistance and high diode reliability. In addition, efforts to reduce total chip area within a power module can improve switching speed but often introduce trade-offs, including higher on-resistance, reduced diode reliability, and compromised thermal performance.
To overcome these challenges, Toshiba developed a new SBD-embedded SiC MOSFET structure that combines a checkerboard-pattern SBD layout with a deep p-type barrier region. By utilizing the electric-field suppression effect of the deep p-type barrier region, the company achieved greater design flexibility and enabled the integrated optimization of multiple device parameters, including the channel, drift layer, JFET region, and gate-drive conditions.
This architecture suppresses localized current concentration, improves current flow through both the channel and drift layer, and enables stable current operation during both on-state and diode conduction modes. As a result, the trade-off between on-resistance and diode reliability is significantly improved.
The new device achieves a specific on-resistance of 1.8 mΩ·cm² at 25°C and 2.7 mΩ·cm² at 150°C, representing approximately a 50% reduction compared with conventional device structures. In addition, SBD current conduction capability per unit area has been increased by approximately 40%.
The newly developed device has been incorporated into a 1200 V-class SiC power module. Through this implementation, Toshiba reduced the total chip area within the module by approximately 36% compared with conventional designs. Despite the reduction in chip area, improvements in device performance, including lower on-resistance and enhanced reliability, enabled lower conduction losses at the module level while maintaining diode reliability.
Toshiba also enhanced the packaging structure and module design through the adoption of a resin-insulated substrate. These improvements reduced thermal resistance per unit area by approximately 25%, improving heat spreading performance and maintaining effective heat dissipation despite the higher thermal density associated with smaller chip dimensions.
The combined device and packaging innovations also contributed to further reductions in switching losses. Simulation results demonstrated that total inverter power losses can be reduced by approximately 30% during 60 kHz high-frequency operation. Additional reductions in switching losses are expected through further optimization of operating conditions, including gate-drive speed.
The company believes the technology will serve as an important platform for achieving higher efficiency and greater miniaturization in power conversion systems, including data center UPS systems, industrial equipment, and renewable energy applications.
Toshiba plans to continue advancing the technology toward practical deployment and mass production while pursuing further improvements in high-frequency operation and overall system performance. The company aims to contribute to higher energy efficiency across power systems and support the development of a more sustainable society.
Original – Toshiba
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Wolfspeed has introduced its fifth-generation silicon carbide (SiC) technology platform, delivering significant advances in efficiency and performance for next-generation 1200 V and 750 V automotive and industrial power applications.
The new Gen 5 platform builds on the company’s previous generation technology and is designed to address increasing demands for higher efficiency, greater power density, and improved thermal performance across electric vehicles, charging infrastructure, industrial power supplies, and other high-power systems.
According to Wolfspeed, the latest generation establishes a new benchmark for specific on-resistance (RSP), a key performance metric that measures efficiency relative to the active die area of a MOSFET. The technology is intended to help system designers develop more compact and efficient power conversion systems while supporting higher current capability within the same silicon carbide footprint.
“Gen 4 delivered the switching performance breakthrough our customers needed, and less than two years later we are introducing Gen 5, which provides the highest current capability possible within a 5 x 5 mm silicon carbide footprint,” said Dr. Cengiz Balkas, Chief Business Officer at Wolfspeed. “The technology enables a faster path to more efficient, compact, and robust systems designed for real-world operating conditions.”
The company noted that automotive manufacturers continue to face pressure to achieve electrification goals while addressing challenges related to vehicle cost, safety, driving range, and charging infrastructure. Wolfspeed stated that Gen 5 technology was developed to help address these factors by enabling more compact traction inverter designs, improving vehicle efficiency, and supporting optimization of battery sizing.
Beyond electric vehicle traction systems, the technology is also positioned to support applications such as solid-state circuit breakers, EV charging infrastructure, and industrial power conversion systems that require high efficiency and high-temperature operation.
A key focus of the new platform is increasing current capability within a given silicon carbide die area. Wolfspeed reports that Gen 5-based systems can achieve the highest current levels at elevated operating temperatures when compared with competing silicon carbide MOSFETs using a 5 x 5 mm footprint.
The company has further optimized RDS(ON), addressing two critical design challenges. First, the technology reduces system-level conduction losses through an improvement in specific on-resistance of up to 27% compared with currently available competitive 1200 V silicon carbide solutions. The 1200 V QEM50120-025D10 achieves a chip-level RSP of 3.4 mΩ-cm² at 175°C, while the 750 V QEM50075-025D10 achieves a chip-level RSP of 2.0 mΩ-cm² at the same temperature.
Second, the platform reduces the need for additional system-level design margin through an ultra-low RDS(ON) distribution of ±18% across both voltage classes.
Gen 5 retains the body diode architecture introduced with the previous generation while extending continuous junction temperature capability to 200°C, with limited-life operation supported up to 215°C. Wolfspeed stated that the devices maintain low on-resistance while delivering excellent switching performance and reduced overall switching losses through further improvements in reverse recovery charge characteristics.
The company emphasized that Gen 5 has been developed on a commercially mature manufacturing platform designed to provide a low-risk path from design qualification to high-volume production. This marks the second Wolfspeed MOSFET technology generation to be designed, manufactured, and qualified within the company’s 200 mm device fabrication facility in Mohawk Valley, New York.
All new product introductions, sampling activities, and customer validation programs will utilize 200 mm production material, with no additional manufacturing toolsets required for volume production.
“Our planar MOSFET technology continues to offer significant opportunities for innovation,” said Dr. Adam Barkley, Vice President of Power Device and Package Development at Wolfspeed. “Gen 5 was developed using familiar manufacturing processes and tools to provide customers with a low-risk upgrade path for next-generation programs. This approach enables faster validation, qualification, and time-to-market while maintaining the performance and reliability customers expect.”
Samples of the QEM50120-025D10 and QEM50075-025D10 devices are currently available to select customers through Wolfspeed’s direct sales channels. The company expects to introduce additional 750 V and 1200 V Gen 5 products throughout 2026 and into early 2027 based on customer requirements and market demand.
Original – Wolfspeed
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Nexperia B.V. and Semikron Danfoss GmbH have signed a Memorandum of Understanding (MoU) to explore a strategic collaboration focused on silicon carbide (SiC)-based power modules for automotive traction inverter applications. The initiative aims to combine Nexperia’s expertise in SiC semiconductor technology with Semikron Danfoss’ capabilities in power module packaging and integration to evaluate the development of high-performance, scalable solutions for next-generation electric vehicles.
As the automotive industry continues to increase the adoption of SiC technology in electric drivetrains, the demand for solutions that improve efficiency, power density, and overall vehicle performance continues to grow. Through this collaboration, the two companies intend to leverage their complementary strengths across the value chain, from semiconductor devices to fully integrated power modules, to address the evolving requirements of automotive applications.
The companies will explore joint engineering approaches, including early-stage integration and co-design methodologies, with the objective of maximizing the performance potential of SiC-based power systems.
Commenting on the agreement, Carsten Götte, Senior Vice President of the Automotive Power Modules Division at Semikron Danfoss, said the combination of Nexperia’s semiconductor expertise and Semikron Danfoss’ module capabilities creates an opportunity to explore solutions that could deliver additional value to customers in the rapidly developing electric vehicle market.
Edoardo Merli, Senior Vice President and Head of the Wide Bandgap, IGBT & Modules (WIM) Business Group at Nexperia, highlighted the importance of industry partnerships in advancing the adoption of wide-bandgap technologies such as SiC and gallium nitride (GaN). He noted that Nexperia’s ongoing investments in research and development, together with a focus on early-stage collaboration, support the alignment of semiconductor and system requirements from the outset of product development.
The Memorandum of Understanding was signed on June 8, 2026, by Stefan Tilger, Nexperia’s Interim Chief Executive Officer, and Carsten Götte, Senior Vice President of the Semikron Danfoss Automotive Power Modules Division.
Both companies share strong European roots and extensive experience in the power electronics industry, providing a foundation for exploring future opportunities in automotive power semiconductor and module technologies.
Original – Semikron Danfoss
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Nexperia has announced the launch of its 1200 V silicon carbide (SiC) MOSFET portfolio in QDPAK packaging, expanding its wide-bandgap (WBG) product family with a top-side cooled surface-mount solution designed for high-power-density and thermally demanding applications.
The new devices are engineered for high-efficiency, high-voltage power conversion systems, combining the electrical performance of Nexperia’s SiC technology with simplified thermal management and mechanical integration. The result is improved power density, higher output power capability, enhanced efficiency, and better thermal performance in compact system designs.
Available in both industrial-grade and automotive-qualified versions, the portfolio includes RDS(on) options of 17 mΩ, 30 mΩ, 40 mΩ, 60 mΩ, and 80 mΩ. This range provides a scalable QDPAK platform suitable for applications spanning high-power industrial systems to space-constrained designs with demanding thermal and mechanical requirements. The addition of QDPAK complements Nexperia’s existing package portfolio and offers designers greater flexibility in optimizing efficiency, thermal performance, and power density.
The QDPAK package addresses one of the key challenges in high-voltage power conversion systems: effective heat dissipation. By enabling a direct thermal path from the semiconductor die to the heatsink through the top side of the package, the design reduces dependence on the PCB as the primary heat-spreading medium. This allows the thermal management of the semiconductor and PCB to be handled more independently, simplifying overall system design.
According to Nexperia, compared with conventional D2PAK-7 packaging, top-side cooled solutions can deliver up to 3 kW higher output power while operating within comparable thermal limits. They can also provide approximately 40°C additional thermal headroom at the same power level. Building on the company’s existing X.PAK platform, the QDPAK package further extends power handling capability, enabling operation at roughly 3 kW higher power levels at similar case temperatures while offering around 23°C additional thermal headroom under comparable operating conditions.
The devices are well suited for a wide range of applications, including electric vehicle onboard chargers (OBCs), high-voltage DC-DC converters, EV charging infrastructure, photovoltaic inverters, uninterruptible power supplies (UPS), motor drives, and data center power systems. The package enables engineers to optimize both electrical and mechanical aspects of system design while addressing increasingly stringent power density requirements.
Gaetano Pignataro, Head of the SiC & IGBT Product Group at Nexperia, said that as wide-bandgap technologies continue to transform power conversion design, engineers are facing new thermal, mechanical, and efficiency challenges as systems become more compact, denser, and more power intensive. He noted that the company’s 1200 V SiC MOSFETs in QDPAK combine the performance advantages of its SiC technology with the thermal benefits of top-side cooling, providing designers with a practical and scalable solution for next-generation high-power applications.
Nexperia’s 1200 V SiC MOSFETs in QDPAK packaging combine the advantages of top-side cooled surface-mount technology with the electrical characteristics required for efficient high-voltage power conversion. The devices feature excellent RDS(on) temperature stability, supporting predictable conduction losses and reliable operation at elevated junction temperatures. Their low-inductance package design and controlled switching behavior contribute to efficient operation, while the inclusion of a dedicated Kelvin source pin enables faster commutation and improved switching control. This helps designers reduce ringing, manage electromagnetic interference (EMI), and improve overall switching performance in demanding power applications.
Original – Nexperia
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SemiQ Inc. has expanded its QSiC™ Dual3 family of silicon carbide (SiC) half-bridge MOSFET modules with the introduction of high-thermal-performance variants featuring aluminum nitride (AlN) substrates and pre-applied thermal interface material (TIM), alongside new 1700 V products. The expanded portfolio is designed to address the increasing power and thermal requirements of applications including AI data center power systems, energy storage infrastructure, solid-state transformers (SSTs), AC-DC converters, and industrial motor drives used in cooling and chiller systems.
The QSiC Dual3 family is designed to support the development of power converters with high conversion efficiency and power density. To further enhance performance, selected modules are available with an optional parallel Schottky barrier diode (SBD), which helps reduce switching losses and improve efficiency, particularly in high-temperature operating environments.
Several devices within the family offer RDS(on) values as low as 1 mΩ while supporting power levels up to 1150 A at 1200 V in a 62 mm × 152 mm package. The portfolio is intended to provide designers with a scalable platform for high-power applications requiring both efficiency and compact system design.
SemiQ developed the QSiC Dual3 series as a replacement option for conventional IGBT modules, enabling system upgrades with minimal redesign. To support reliability requirements, all MOSFET die used in the modules undergo wafer-level gate oxide burn-in testing at voltages exceeding 1450 V. The modules also feature low junction-to-case thermal resistance, enabling simplified thermal management and the use of smaller, lighter heatsinks at the system level.
According to SemiQ, the growing demand for continuous operation in data centers is increasing the importance of efficient power conversion. The company noted that the QSiC Dual3 platform is being deployed in both active front-end power systems and liquid chiller compressor drives, offering reductions in system size and weight compared with traditional silicon IGBT-based solutions while leveraging the efficiency benefits of SiC technology.
The newly introduced high-thermal-performance variants are also being designed into main AC-DC power converters and solid-state transformer architectures. These systems are intended to support direct conversion from medium-voltage AC distribution levels, including 13.8 kV and 35 kV, to high-voltage 800 V DC systems used in modern data center power architectures.
The latest additions to the portfolio are identified by the “-NT” suffix and incorporate AlN substrates together with pre-applied TIM. SemiQ has also expanded the family with new 1700 V devices, including the GCMX1P7C170S4B1(-NT) and GCMS1P7C170S4B1(-NT), which are expected to become available in the coming months.
The expanded lineup includes both standard and Schottky barrier diode-equipped configurations across multiple resistance ratings. New 1200 V modules are available with RDS(on) values of 1 mΩ, 1.4 mΩ, and 2 mΩ, while the new 1700 V variants feature an RDS(on) of 1.7 mΩ. All devices are offered in the S4B1 half-bridge package with AlN substrate and thermal interface material options.
Original – SemiQ
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ROHM Co., Ltd. has developed the new TSC3PAK package for silicon carbide (SiC) MOSFETs, designed to combine the thermal performance of conventional through-hole packages with the manufacturing advantages of surface-mount technology. Measuring 14.00 mm × 18.58 mm × 3.50 mm, the package is intended for power conversion applications in electric vehicles and industrial equipment where efficiency, reliability, and automated assembly are increasingly important.
The TSC3PAK package adopts a top-side heat dissipation structure, placing the heat transfer surface on the top of the package. This design enables automated surface-mount assembly while delivering heat dissipation performance comparable to conventional TO-247-4L through-hole packages. The new package is targeted at applications such as onboard chargers (OBCs) and electric compressors in xEVs, where higher power density and thermal performance are required.
As the adoption of SiC devices expands beyond traction inverters into auxiliary vehicle power systems, manufacturers are increasingly seeking solutions that improve charging performance and vehicle driving range. SiC technology is also gaining traction in industrial applications including photovoltaic inverters and high-performance server power supplies, where energy efficiency is a critical requirement.
Traditionally, SiC power devices have relied on through-hole packages due to their strong thermal performance under high-power operating conditions. However, these packages often require manual assembly processes and can limit efforts to reduce overall system height. Surface-mount SiC devices compatible with automated production lines are therefore becoming increasingly attractive. ROHM developed the TSC3PAK package to address these challenges by providing TO-247-class thermal performance in a surface-mount format.
The package incorporates ROHM’s proprietary groove structure, enabling a creepage distance of 6.66 mm. According to the company, this provides a class-leading creepage specification while maintaining compatibility with widely adopted industry designs. The package supports AC peak voltages of up to 1200 V in Pollution Degree 2 environments, helping simplify insulation design requirements in high-voltage systems while contributing to lower mounting costs and improved system reliability.
Products utilizing the TSC3PAK package are based on ROHM’s fourth-generation SiC MOSFET technology, which combines low ON-resistance with high-speed switching performance. These characteristics help reduce switching losses during power conversion, contributing to improved system efficiency and lower overall power consumption.
Mass production of devices featuring the new package began in June 2026. ROHM also provides simulation models for the entire product lineup through its website to support faster circuit design and evaluation. The company stated that it will continue expanding its SiC MOSFET portfolio to support higher performance, greater miniaturization, and improved reliability across automotive and industrial power electronics applications.
The initial TSC3PAK product lineup includes both consumer and AEC-Q101-qualified automotive devices. The range covers 750 V and 1200 V SiC MOSFETs with typical RDS(on) values ranging from 13 mΩ to 90 mΩ and maximum drain current ratings from 18 A to 102 A.
Target applications include automotive systems such as onboard chargers and electric compressors, as well as industrial equipment including photovoltaic inverters and server power supplies.
Original – ROHM
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GE Aerospace and Wolfspeed have signed a Memorandum of Understanding (MoU) to collaborate on accelerating the adoption of high-voltage silicon carbide (SiC) technologies across industrial, aerospace, and defense applications.
Under the agreement, the two companies plan to work together on the development of standards for high-voltage SiC power modules. The collaboration is intended to support a range of applications, including solid-state transformers, industrial electrification systems, and next-generation aerospace and defense platforms, while also contributing to greater supply chain resilience.
The companies believe that high-voltage SiC power modules can enable more compact, efficient, and reliable systems by reducing the number of series-connected devices required in high-power applications. This simplification can help lower overall system complexity while improving performance across a variety of end markets.
Kris Shepherd, President of Electrical Power at GE Aerospace, noted that both companies have independently contributed to several industry-first innovations and stated that the collaboration aims to support the development of a robust high-power silicon carbide value chain focused on enabling smaller, lighter, and more efficient high-voltage systems.
Robert Feurle, Chief Executive Officer of Wolfspeed, emphasized the growing demand for advanced power technologies driven by artificial intelligence, electrification, and defense applications. He stated that the partnership is focused on supporting domestic sourcing of high-power silicon carbide modules and enabling power systems that improve efficiency while reducing deployment timelines. He also highlighted the readiness of high-voltage silicon carbide technology to address increasing power delivery challenges across multiple industries.
GE Aerospace has recently achieved several milestones in silicon carbide power electronics. The company qualified high-voltage power units for U.S. military ground vehicle applications, moving them into production readiness. In addition, GE Aerospace successfully demonstrated its fourth-generation silicon carbide power MOSFET technology at its Research Center in Niskayuna, New York. The new devices are designed to improve switching speed, efficiency, and durability in high-power applications.
Wolfspeed continues to expand its position in the silicon carbide market through its high-volume 200 mm SiC manufacturing platform. The company recently introduced what it describes as the world’s first commercially available 10 kV silicon carbide MOSFET, a technology that received recognition as a PCIM Top Innovation. The device is intended to provide industrial, artificial intelligence, aerospace, and defense markets with a production-ready solution for high-voltage power conversion applications.
Through the collaboration, GE Aerospace and Wolfspeed aim to support the broader adoption of high-voltage silicon carbide technologies and advance next-generation power systems for critical industrial and defense infrastructure.
Original – Wolfspeed
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Infineon Technologies AG and Siemens AG have entered into a partnership aimed at enhancing electrical protection and operational reliability in data centers, manufacturing facilities, and battery energy storage systems. As part of the collaboration, Infineon will supply silicon carbide (SiC) power modules for integration into Siemens’ SENTRON 3QD2 semiconductor circuit breakers.
The cooperation is designed to improve the efficiency, power density, and reliability of Siemens’ advanced protection solutions, addressing the growing demands of increasingly electrified and power-intensive environments.
According to Andreas Weisl, Executive Vice President and Chief Sales Officer of Industrial and Infrastructure at Infineon, the rapid expansion of AI data centers and the increasing electrification of industrial facilities are creating more complex electrical infrastructures. This complexity raises vulnerability to electrical faults and drives demand for more efficient, reliable, and sustainable power distribution systems. He noted that the combination of Infineon’s silicon carbide technology and Siemens’ expertise in power distribution is intended to support safe, fast, and dependable operation in power-critical environments.
Semiconductor circuit breakers, also referred to as solid-state circuit breakers, are designed to protect electrical systems against excessive current events such as short circuits and overloads. Unlike conventional electromechanical circuit breakers, which rely on mechanical components and typically operate on a millisecond timescale, Siemens’ SENTRON 3QD2 employs semiconductor devices and intelligent protection algorithms to interrupt current flow.
This approach enables interruption times in the microsecond range, making the system up to 1,000 times faster than traditional circuit breakers. Such performance is particularly important for direct current (DC) grids and applications where electrical interruptions can result in significant operational disruptions, including AI data centers and industrial manufacturing facilities. Faster fault isolation can help reduce the risk of downtime, data loss, and damage to critical equipment.
Markus Grabmeier, Chief Executive Officer of Electrical Products at Siemens Smart Infrastructure, stated that the company’s direct current portfolio is designed to improve energy efficiency while supporting the development of resilient and future-ready infrastructure. He noted that DC-based applications can reduce energy consumption and material usage, while battery integration can significantly lower peak power demand. According to Grabmeier, these capabilities contribute to industrial decarbonization efforts and support the development of technologies that provide practical value for customers and society.
The partnership addresses the increasing performance requirements of power-critical applications, where speed, precision, and reliability are essential. By integrating Infineon’s 1200 V CoolSiC™ MOSFET module in the 62 mm package into Siemens’ advanced protection systems, the companies aim to support the development of more resilient, efficient, and future-ready power infrastructure.
The collaboration is also intended to support the wider adoption of DC power distribution networks and highly electrified environments, helping industrial and infrastructure operators meet growing demands for performance, efficiency, and system reliability.
Original – Infineon Technologies
