-
ROHM announced the start of online sales for new silicon carbide molded modules, including the TRCDRIVE pack™, HSDIP20 and DOT-247 series. The new modules are designed to promote wider adoption of high-efficiency SiC-based power conversion technologies as global demand for energy-efficient power systems continues to grow.
The products are available for online purchase through distributors such as DigiKey and Farnell.
The TRCDRIVE pack™ is a 2-in-1 SiC molded module designed for traction inverters in electric vehicles with power levels up to 300 kW. It integrates ROHM’s fourth-generation SiC MOSFETs with low on-resistance, enabling approximately 1.5× higher power density compared with conventional SiC molded modules. The module also features a terminal layout that allows the gate driver board to be connected from the top, simplifying assembly and reducing installation time. Example applications include xEV traction inverters.
The HSDIP20 module is available in 4-in-1 and 6-in-1 configurations and targets applications such as xEV onboard chargers, EV charging stations, server power supplies and AC servo systems. The lineup includes six models rated at 750 V and seven models rated at 1200 V. The modules integrate the essential power conversion circuits into a compact package, reducing design complexity and enabling smaller power conversion systems.
The DOT-247 module is a 2-in-1 SiC module designed primarily for industrial applications such as photovoltaic inverters and uninterruptible power supply systems. It retains the versatility of the widely used TO-247 package while delivering higher power density. The module supports both half-bridge and common-source circuit configurations and helps reduce component count and PCB area in power conversion circuits.
Applications for the new SiC modules include electric vehicle systems such as onboard chargers, DC-DC converters and electric compressors, as well as industrial equipment including EV charging stations, V2X systems, PV inverters, power conditioners and AI data center power systems.
Original – ROHM
-
Navitas Semiconductor announced two new package options for its 5th generation GeneSiC silicon carbide MOSFET platform, introducing a top-side cooled QDPAK package and a low-profile TO-247-4L package with asymmetrical leads. The new devices target applications requiring high power density and improved thermal performance, including AI data centers and energy infrastructure systems.
The devices are based on the company’s fifth-generation trench-assisted planar silicon carbide MOSFET technology. This architecture delivers a 35% improvement in the RDS(on) multiplied by gate-drain charge figure of merit and approximately a 25% improvement in the gate-drain to gate-source charge ratio. Combined with a stable gate threshold voltage greater than 3 V, the design helps prevent parasitic turn-on and enables predictable switching behavior in high-power systems.
The new QDPAK package features a top-side cooling structure designed to address thermal limitations of traditional PCB-based cooling approaches. Heat is transferred directly through the top of the package to a heatsink, improving thermal efficiency and enabling smaller system footprints. The package also reduces parasitic inductance, supporting cleaner switching at high frequencies. It provides a compact footprint of approximately 15 mm by 21 mm with a height of 2.3 mm and includes design features that extend creepage distance while supporting applications up to 1000 VRMS.
Navitas also introduced a low-profile TO-247-4L through-hole package designed for systems where vertical space is constrained. By reducing the height of the package on the PCB, the design enables higher power density compared with conventional TO-247-4 packages. The device also incorporates asymmetrical leads, including thinner leads for the gate and Kelvin-source connections, to improve manufacturing tolerances during PCB assembly.
The new packaging options are intended for applications such as AI data center power supplies and high-performance power conversion systems where compact form factors and efficient thermal management are essential.
The initial products include four 1200 V SiC MOSFETs with on-resistance values of 6.5 mΩ and 12 mΩ, offered in both QDPAK and TO-247-4L packages. Samples are available for customer evaluation.
Original – Navitas Semiconductor
-
Micro Commercial Components (MCC) has introduced a new family of trench field-stop IGBTs designed to support high-efficiency power conversion in industrial and energy applications.
The new devices are available with voltage ratings of 650 V and 1200 V and are engineered to deliver low switching losses, fast switching performance, and reliable operation under demanding electrical and thermal conditions. The IGBTs use an advanced trench and field-stop structure that improves efficiency while reducing conduction and switching losses in power conversion systems.
The devices offer high current capability with continuous current ratings of up to 40 A and pulsed current capability reaching 80 A depending on the model. A low collector-emitter saturation voltage of approximately 1.95 V helps reduce conduction losses and improve overall system efficiency.
The 1200 V variant integrates a fast and soft-recovery anti-parallel diode, enabling improved performance in both hard-switching and soft-switching converter topologies. A positive temperature coefficient supports better current sharing in parallel device configurations while improving thermal stability.
The IGBTs are rated for maximum junction temperatures up to 175 °C and are packaged in the TO-247AB power package, which provides robust mechanical strength and effective heat dissipation for high-power applications.
The initial devices in the series include the MIW40N65AH2Y and MIW40N120AH2Y models, targeting applications such as industrial motor drives, power supplies, and energy conversion systems requiring high efficiency and reliable high-temperature operation.
Original – Micro Commercial Components
-
SK keyfoundry announced the development of a silicon carbide planar MOSFET process platform and revealed that it has secured its first order for a 1200 V SiC MOSFET product, marking the company’s entry into the silicon carbide compound semiconductor foundry market.
The newly developed platform supports a voltage range from 450 V to 2300 V and is designed to deliver high reliability and stability in high-voltage operating environments. According to the company, process optimization and tighter control of key manufacturing steps have enabled yields exceeding 90% while improving overall productivity.
SK keyfoundry also highlighted a customized process support service that allows device designers to fine-tune electrical characteristics and specifications according to their application requirements.
Following completion of the process platform, the company secured an order from a customer specializing in SiC device design for the development of a 1200 V MOSFET product. The device will be used in industrial equipment applications where thermal efficiency management is critical. After prototype evaluation and reliability testing, mass production is expected to begin in the first half of 2027.
The development represents the first major outcome following SK keyfoundry’s acquisition of SK powertech, which specializes in SiC technology. The integration of capabilities from both companies enabled the creation of the new platform.
SK keyfoundry stated that securing a commercial customer order immediately after completing the technology development demonstrates the maturity and competitiveness of the platform and signals readiness for commercialization in the growing compound semiconductor market. CEO Derek D. Lee said the company plans to expand its high-voltage power semiconductor offerings to meet increasing demand from global customers.
Original – SK keyfoundry
-
Wolfspeed announced that its 300 mm silicon carbide technology platform could become a key materials foundation for advanced heterogeneous packaging used in AI and high-performance computing systems by the end of the decade.
The initiative builds on the company’s January 2026 milestone of producing a single-crystal 300 mm SiC wafer. Wolfspeed is now working with partners across the AI ecosystem to evaluate how large-diameter silicon carbide substrates could help address emerging performance limitations in next-generation semiconductor packaging.
As AI workloads increase, semiconductor packages are growing in size, power density, and integration complexity. These trends are pushing conventional materials used in advanced packaging toward their thermal, mechanical, and electrical limits. Wolfspeed believes silicon carbide can help address these challenges because of its high thermal conductivity, mechanical robustness, and favorable electrical characteristics.
Using a 300 mm SiC wafer format also aligns with the existing semiconductor manufacturing infrastructure used for advanced silicon devices. This compatibility allows potential integration with current wafer-level packaging processes and fabrication tools while supporting scalable high-volume manufacturing.
The company is collaborating with foundries, outsourced semiconductor assembly and test providers, system architects, and research institutions to study the feasibility of silicon carbide interposers and related packaging components. The program aims to evaluate performance benefits, reliability, and integration pathways for hybrid silicon–silicon carbide packaging architectures.
According to Wolfspeed, the larger 300 mm wafer format could enable fabrication of larger interposers and heat spreaders required for increasingly large and complex semiconductor packages used in AI and HPC systems. The approach is intended to support the industry’s transition toward higher integration levels while maintaining manufacturability and ecosystem compatibility.
Original – Wolfspeed
-
iDEAL Semiconductor announced an expansion of its SuperQ 200 V MOSFET portfolio, introducing new devices that deliver industry-leading on-resistance in widely used power semiconductor packages.
The iS20M5R5S1T sets a new benchmark as the lowest RDS(on) 200 V MOSFET available in the industry-standard TOLL package, while the newly introduced iS20M6R3S1P offers the lowest RDS(on) for a 200 V MOSFET in the TO-220 package. Together, these devices provide high efficiency and design flexibility for both surface-mount and through-hole power electronics applications.
The iS20M5R5S1T achieves a maximum RDS(on) of 5.5 mΩ in a compact TOLL package, enabling higher power density and reduced conduction losses in space-constrained designs. The complementary iS20M6R3S1P provides a maximum RDS(on) of 6.3 mΩ in the TO-220 package, supporting applications that require through-hole assembly, mechanical mounting, or direct heatsinking.
iDEAL Semiconductor plans to further expand its 200 V SuperQ MOSFET lineup later in 2026 by introducing the same 5.5 mΩ performance level in additional packages, including a D2PAK-7L variant optimized for high-current surface-mount designs and a TOLT package designed for compact layouts with top-side cooling capabilities.
The SuperQ 200 V MOSFET devices are primarily targeted at demanding motor-drive applications where efficiency, robustness, and fault tolerance are critical. Key characteristics include high short-circuit withstand capability, improved device paralleling with ±0.5 V gate threshold voltage tolerance, a maximum operating temperature rating of 175 °C, and current handling capability up to 151 A in the TOLL package and 172 A in the TO-220 package. The devices are also avalanche-rated and undergo 100% unclamped inductive switching testing in production.
Beyond motor drives, the MOSFETs can be used in switched-mode power supplies, secondary-side synchronous rectification circuits, and other high-current industrial or battery-powered systems where efficiency and thermal performance are important.
The iS20M5R5S1T and iS20M6R3S1P devices are currently in volume production and available through the company’s global distribution network. Additional devices in the series are currently sampling and are expected to enter production later in 2026.
Original – iDEAL Semiconductor
-
Micro Commercial Components (MCC) has expanded its power semiconductor portfolio with the Gen5 silicon carbide Schottky diode series, a family of high-current 650 V SiC Schottky barrier diodes designed for low conduction losses, fast switching, and reliable operation under demanding electrical and thermal conditions.
Built on merged PiN Schottky (MPS) technology and packaged in the industry-standard D2-PAK format, the devices support compact high-power system designs while enabling efficient heat dissipation. The diodes are optimized for high-efficiency power conversion systems and combine a low forward voltage drop of approximately 1.3 V, near-zero reverse recovery behavior, and a maximum junction temperature of 175 °C.
These characteristics help reduce switching losses, increase power density, and simplify thermal management in applications such as power factor correction stages, industrial power supplies, renewable energy inverters, and high-current rectification circuits.
The series includes the SICB2065XG5M device and the automotive-qualified SICB2065XG5MQ variant, which complies with AEC-Q101 standards. With high current capability of up to 86 A, high-speed switching performance, and a positive temperature coefficient that helps prevent thermal runaway, the devices are designed to support efficient and stable operation even under high load and elevated temperature conditions.
According to MCC, the Gen5 SiC Schottky diode family enables designers to achieve higher efficiency and reliability targets while reducing electromagnetic interference and supporting compact system architectures in high-power applications.
Original – Micro Commercial Components
-
Wolfspeed announced the commercial availability of the industry’s first 10 kV silicon carbide power MOSFET, a development aimed at advancing high-voltage power conversion for grid infrastructure, industrial electrification, and AI data center applications.
The new device introduces silicon carbide capability at the 10 kV level, enabling new system architectures for high-voltage power electronics. According to the company, the technology supports improvements in system efficiency, reliability, and design flexibility for applications such as solid-state transformers, wind power systems, and medium-voltage uninterruptible power supplies.
The device also demonstrates high durability. Intrinsic time-dependent dielectric breakdown lifetime analysis indicates a projected operating lifetime of approximately 158,000 years at a continuous 20 V gate bias voltage. Wolfspeed stated that the technology also addresses bipolar degradation challenges that have historically affected 10 kV SiC MOSFETs, enabling reliable body diode operation required in many high-power systems.
The availability of 10 kV silicon carbide devices allows designers to simplify system architectures and reduce component counts. According to Wolfspeed, systems using the technology can reduce overall system cost by about 30% by enabling simpler inverter topologies and fewer power conversion stages. Power density improvements exceeding 300% are possible through higher switching frequencies, increasing from about 600 Hz to 10,000 Hz, which allows smaller magnetics and simplified gate drive and control circuits. The technology can also reduce system-level thermal requirements by up to 50% due to conversion efficiencies approaching 99%.
The fast switching capability of the device, with rise times below 10 nanoseconds, also enables solid-state switching solutions to replace conventional mechanical spark-gap switches in pulsed-power systems. These solid-state devices eliminate arcing, improve timing precision, and reduce maintenance requirements. Potential applications include geothermal power systems, semiconductor plasma etching, pulsed power for AI data centers, and sustainable fertilizer production.
The device, designated CPM3-10000-0300A, is currently available as a bare die for customer sampling and qualification. Wolfspeed stated that the commercialization of the 10 kV SiC MOSFET builds on nearly three decades of development in crystal growth, epitaxy, and high-voltage device manufacturing and enables customers to move prototype designs at this voltage level into production.
Original – Wolfspeed
-
Micro Commercial Components (MCC) has introduced the SICWT40120G6M, a 1200 V silicon carbide Schottky diode designed to address switching losses, thermal stress, and reliability challenges in high-voltage, high-frequency power conversion systems.
Traditional rectifier solutions can increase power dissipation, require larger cooling solutions, and limit achievable power density, particularly in high-current and high-temperature environments. The new device is intended to improve efficiency and reliability in these demanding operating conditions.
The SICWT40120G6M is built on merged PiN Schottky (MPS) technology, enabling zero reverse recovery behavior along with low forward voltage and very low leakage current. These characteristics significantly reduce switching and conduction losses in high-frequency power conversion applications.
The diode supports high continuous and surge current capability and operates across a wide junction temperature range from −55°C to +175°C. A positive temperature coefficient helps maintain stable operation and reduces the risk of thermal runaway in high-power systems.
The device is packaged in a TO-247AD package designed for strong thermal performance, supporting efficient heat dissipation and enabling more compact and reliable system designs.
According to MCC, the new SiC diode targets applications including industrial power conversion, transportation systems, and EV charging infrastructure, where high efficiency, thermal robustness, and compact design are critical requirements.
Original – Micro Commercial Components
-
Novel Crystal Technology, Inc. will begin shipping 150 mm (6-inch) β-Ga₂O₃ (gallium oxide) substrate samples in March 2026. The company said the milestone represents a key step toward large-scale industrial adoption of next-generation high-voltage power devices.
β-Ga₂O₃ features a bandgap energy exceeding that of silicon carbide (SiC) and gallium nitride (GaN), enabling higher breakdown voltage, lower energy loss and greater device miniaturization. The substrates are produced using a melt growth method, which the company said offers a combination of high performance and scalability suited to applications such as railways, industrial systems and electric power infrastructure.
Global demand for high-voltage, high-power devices is rising due to electrification across industrial and transportation sectors and the expansion of AI data centers. While β-Ga₂O₃ wafers have previously been limited to 100 mm (4-inch) R&D use, transitioning to 150 mm aligns the material with standard production lines. Novel Crystal Technology said this shift will support ecosystem development and pave the way for mass production of 150 mm β-Ga₂O₃ epi-wafers targeted for 2029.
Key Product Features
- EFG Growth Technology: The company leverages experience with the EFG method used for 100 mm β-Ga₂O₃ substrates to ensure quality and supply stability at 150 mm.
- Industry-Standard Compatibility: The 150 mm diameter matches existing power device production lines, supporting commercialization efforts.
- Development Enablement: Early supply of high-quality monocrystalline substrates allows partners to advance epitaxial growth and device process development ahead of large-scale production.
To improve cost competitiveness, the company is developing its DG Method, a growth technology designed to eliminate the need for expensive precious-metal crucibles. Novel Crystal Technology said this approach is expected to enable pricing that surpasses SiC in cost competitiveness.
Strategic Timeline:
- 2027: Launch of 150 mm β-Ga₂O₃ epi-wafer samples
- 2029: Full-scale mass production of 150 mm β-Ga₂O₃ epi-wafers using the DG Method
- 2035: Targeted supply of 200 mm (8-inch) β-Ga₂O₃ substrates
Original – Novel Crystal Technology
