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Efficient Power Conversion Corporation (EPC) has announced the release of the EPC91120, a high-performance 3-phase brushless DC (BLDC) motor drive inverter designed specifically for integration into humanoid robot joints.
The EPC91120 leverages EPC’s EPC23102 ePower™ Stage IC to deliver superior efficiency, high power density, and precise motion control in a compact 32 mm-diameter form factor. The board is optimized to fit directly into robotic motor assemblies, including compatibility with the mechanical dimensions of the Unitree A1 robot motor.
The EPC91120 evaluation board incorporates three EPC23102 monolithic GaN half-bridge ICs, along with an onboard microcontroller, current and voltage sensing, a magnetic encoder interface, and RS485 communication. Operating from 15 V to 55 V DC, the system supports up to 21 A peak (15 ARMS) continuous current and 42 A peak (30 ARMS) in pulsed operation.
With a 100 kHz PWM switching frequency and minimal dead time of just 50 nanoseconds, the EPC91120 delivers exceptional dynamic performance and system efficiency. These characteristics make it well suited for high-precision motion control in humanoid robotics and other advanced mechatronic applications.
Thermal and efficiency testing confirms strong performance under real-world conditions. Under natural convection cooling at 26°C ambient, the system achieves 7 ARMS per phase without a heatsink. When mounted within a humanoid joint motor casing used as a thermal sink, it can deliver up to 15 ARMS. Overall system efficiency exceeds 80 percent from DC input to mechanical output, validating the design’s suitability for high-torque, lightweight robotic joints.
“The EPC91120 showcases tightly integrated GaN power that makes humanoid robots lighter, faster, and smarter by embedding high-density inverter electronics within each motor joint,” said Alex Lidow, CEO of EPC.
The EPC91120 demonstrates the benefits of GaN integration in next-generation robotics, enabling compact, efficient, and scalable motor control for advanced autonomous systems.
Original – Efficient Power Conversion
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Micro Commercial Components (MCC) has announced the launch of the MCG018N06LHE3, a 60 V N-Channel MOSFET designed to address the challenges of energy efficiency, thermal performance, and space limitations in high-power automotive and industrial applications.
Engineered with an ultra-low on-resistance of just 18 mΩ (typical), the MCG018N06LHE3 significantly reduces conduction losses, supporting improved system efficiency and lower power dissipation. Housed in a thermally optimized PDFN3333 package (3.3 mm x 3.3 mm), the device provides strong thermal performance, enabling reliable operation even in compact, high-density circuit designs.
This MOSFET incorporates a high-density cell structure and is fully AEC-Q101 qualified, ensuring dependable operation in demanding environments. Its thermal design supports extended device longevity and stability under high current and elevated temperatures, meeting the rigorous standards required in automotive and industrial systems.
The MCG018N06LHE3 is ideal for applications such as automotive LED lighting, EV traction inverters, DC-DC converters, solenoid controls, and other power-switching functions where reliability, size, and thermal management are critical. Its compact footprint allows engineers to minimize board space without compromising electrical performance or long-term reliability.
Key features:
- AEC-Q101 qualified for automotive-grade reliability
- Ultra-low on-resistance of 18 mΩ (typical) for reduced conduction losses
- High-density cell design enhances efficiency and current handling
- PDFN3333 package optimized for thermal performance
- Compact 3.3 mm x 3.3 mm footprint ideal for space-constrained designs
- Supports high-current switching with minimal power loss
- Compatible with automated surface-mount assembly
With its robust electrical performance and compact form factor, the MCG018N06LHE3 enables designers to build more efficient, reliable, and thermally optimized power solutions for the next generation of automotive and industrial electronics.
Original – Micro Commercial Components
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Micro Commercial Components (MCC) has introduced the MCAC3D0P03L, a 30 V P-Channel MOSFET designed to address the challenges of high-side switching in compact, high-efficiency power systems.
Utilizing advanced Trench LV technology, the MCAC3D0P03L offers a maximum RDS(on) of just 3.0 mΩ at VGS = -10 V, significantly reducing conduction and switching losses. This allows the device to maintain high efficiency even under demanding dynamic load conditions.
The MOSFET is packaged in a compact DFN5060 format featuring an exposed thermal pad and a low junction-to-case thermal resistance (RθJC) of 0.82°C/W. These features support effective heat dissipation and ensure stable high-current performance when implemented with proper PCB layout and thermal design.
Designed as a true high-side P-Channel MOSFET, the MCAC3D0P03L can eliminate the need for a dedicated high-side driver. This simplifies circuit architectures for load switching, OR-ing, and hot-swap applications while saving valuable board space. With a drain-source voltage rating of 30 V, the device provides ample margin for 12 V power rails and transient events common in server, storage, networking, battery management, and industrial systems.
Optimized gate charge and capacitance enable fast, clean switching, which minimizes EMI and eases driver requirements. With robust electrical and thermal characteristics, along with tape-and-reel packaging for automated assembly, the MCAC3D0P03L is well-suited for space-constrained, high-performance power solutions.
Key features:
- 30 V P-Channel MOSFET optimized for high-side switching
- Low RDS(on) of 3.0 mΩ max at VGS = -10 V for reduced conduction losses
- Supports continuous current up to 40 A (dependent on thermal design)
- Trench LV technology for improved switching efficiency
- RθJC of 0.82°C/W for effective thermal management
- Compact DFN5060 package with exposed pad for high power density
- Suitable for 12 V rails with 30 V VDS rating for transient protection
- Fast switching performance with reduced EMI and simplified driver sizing
The MCAC3D0P03L is engineered to deliver performance, reliability, and efficiency in today’s most demanding power applications.
Original – Micro Commercial Components
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onsemi announced a new family of vertical gallium nitride (vGaN) power semiconductors intended to raise efficiency, power density, and ruggedness across high-demand applications, including AI data centers, electric vehicles, renewable energy, and aerospace and defense. Developed at the company’s Syracuse, New York facility, the GaN-on-GaN technology conducts current vertically through the device to support higher operating voltages and faster switching frequencies.
According to onsemi, the vGaN architecture can reduce conversion losses by nearly 50 percent versus current solutions while enabling smaller and lighter power systems through higher-frequency operation. The company holds more than 130 global patents related to vertical GaN covering process, device architecture, manufacturing, and systems innovations.
Key points
• Technology: GaN-on-GaN structure conducts current vertically, designed for high voltage and high-frequency switching
• Efficiency: Potential to cut power losses by almost 50 percent while improving thermal performance and power density
• Footprint: Devices are described as approximately three times smaller than commercially available lateral GaN alternatives
• Sampling: Initial 700 V and 1,200 V devices are sampling to early access customersTarget applications
• AI data centers: Higher-density 800 V DC-DC stages to improve cost per rack and reduce component count
• Electric vehicles: Smaller, lighter, and more efficient traction inverters
• Charging infrastructure: Faster, more compact, and rugged charging systems
• Renewable energy: Higher-voltage solar and wind inverter stages with lower losses
• Energy storage systems: High-density, bidirectional converters for batteries and microgrids
• Industrial automation: More efficient, cooler motor drives and robotics
• Aerospace, defense, and security: Compact, high-reliability power platformsMost GaN power devices are built on non-GaN substrates such as silicon or sapphire and conduct laterally across the surface. onsemi’s vGaN uses a GaN substrate and a vertical current path, which increases voltage handling, improves thermal stability, and enhances ruggedness under extreme operating conditions. The vertical approach is aimed at enabling higher operating frequencies, shrinking passives such as inductors and capacitors, and reducing overall system size and cooling requirements.
onsemi is currently sampling 700 V and 1,200 V vGaN devices to early access customers. Broader portfolio details and production timelines are expected to follow.
Original – onsemi
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Taiwan Semiconductor announced a new 1,200 V PLA/PLD diode series aimed at automotive and high-reliability power systems. The devices, rated at 15 A, 30 A, and 60 A, combine a low forward voltage (1.3 Vf max), low reverse leakage (<10 µA at 25 °C), and a high junction temperature rating (Tj max 175 °C) to improve efficiency and thermal headroom in demanding environments.
The portfolio is offered in ThinDPAK, D2PAK-D, and TO-247BD packages, enabling straightforward drop-in replacement in existing layouts. Two models, PLAD15QH and PLDS30QH, are fully AEC-Q qualified for automotive use. All six devices are manufactured to stringent automotive-quality standards.
Target applications span three-phase AC/DC converters, server and computing power systems including AI power shelves, EV charging stations and on-board chargers, Vienna rectifiers, totem-pole and bridgeless PFC topologies, inverters and UPS systems, and general-purpose high-power rectification.
By pairing low conduction loss with controlled leakage and high temperature capability, the PLA/PLD diodes are positioned to boost efficiency, reduce thermal dissipation, and enhance reliability across both new and retrofit power designs.
Original – Taiwan Semiconductor
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Magnachip Semiconductor announced two 650V Super Junction MOSFET products in a TO-Leadless (TOLL) package engineered for high-power, high-current consumer applications, including premium TVs, gaming monitors, AI laptop adaptors, and fast chargers.
Unlike Magnachip’s existing 80V–200V eXtreme Trench MOSFETs in 3-pin TOLL, the new 650V SJ MOSFETs adopt a 4-pin Kelvin configuration. By separating the gate-source return path, the design reduces parasitic inductance, helping to curb gate ringing, improve switching stability, and raise overall power efficiency—especially at higher dv/dt and di/dt.
Against conventional D2PAK packaging, the 4-pin TOLL format delivers more than a 100% increase in current capability, a 24% reduction in board footprint, and a 48% reduction in height. The result is a compact, thermally efficient package well suited to smaller PCBs and high-power-density products that demand strong heat dissipation.
The new devices are aimed at meeting the dual requirements of space savings and performance in slim form-factor systems. The company plans to broaden its 600V TOLL lineup to support next-generation platforms in AI datacenters and other high-power applications.
Original – Magnachip Semiconductor
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Infineon Technologies announced EasyPACK™ C, the next generation of its EasyPACK power module family, targeting high-stress industrial applications including fast DC and megawatt EV charging, energy storage systems, and uninterruptible power supplies. The first devices in the new package integrate CoolSiC MOSFETs 1200 V G2 with Infineon’s .XT interconnection technology to deliver higher efficiency, stronger power-cycling performance, and longer service life under fluctuating load profiles.
According to Infineon, designs based on CoolSiC MOSFET G2 in EasyPACK C can achieve more than 30 percent higher power density and up to 20 times longer lifetime compared with prior-generation CoolSiC devices. The second-generation MOSFETs also provide an approximate 25 percent reduction in RDS(on), helping to cut conduction losses and improve thermal headroom at elevated operating currents.
The new housing concept supports higher power density and greater layout flexibility, and it is engineered with a roadmap toward future, higher-voltage classes. The inclusion of .XT interconnection is intended to further extend device lifetime by reducing thermal resistance and improving reliability under rigorous cycling.
EasyPACK C has been engineered for harsh thermal conditions. The modules withstand overload switching up to a junction temperature Tvj(over) of 200°C and support continuous operation up to Tvj(op) of 175°C, aided by a new plastic material and silicone gel system. An updated PressFIT pin design doubles current capacity per pin, lowers PCB-level temperatures, and streamlines assembly. Electrical isolation is rated at 3 kV AC for one minute.
The portfolio launches with multiple topologies, including three-level and H-bridge configurations, and is available with or without integrated thermal interface material to align with different cooling strategies and manufacturing flows.
Initial modules featuring CoolSiC MOSFET G2 in EasyPACK C are available now, with further additions planned to serve a broader range of industrial power architectures.
Original – Infineon Technologies
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MCC introduced the MCTL1D0N08Y, an 80 V N-channel MOSFET in a compact TOLL-8L package engineered for high-current, fast-switching designs where thermal performance, efficiency, and footprint are critical. With a maximum RDS(on) of 1.0 mΩ at VGS = 10 V and a continuous drain current rating of 320 A, the device is aimed at reducing conduction losses in server-class SMPS, high-current DC-DC converters, industrial motor drives, and energy-storage inverters.
The MOSFET leverages a split-gate trench architecture and a low-parasitic package layout to enable fast, clean transitions that lower switching losses and mitigate EMI. Compared with legacy D2PAK solutions, the TOLL-8L format shortens current paths and improves thermal flow, supporting higher switching frequencies, smaller magnetics and heatsinks, and more compact, reliable assemblies.
Key specifications and design attributes
• Drain-source voltage (VDS): 80 V, providing transient headroom for telecom, data center, and industrial environments
• RDS(on): 1.0 mΩ max at VGS = 10 V for minimized conduction loss and higher efficiency
• Continuous drain current: 320 A for demanding high-current stages
• Package: TOLL-8L with low parasitics for improved switching behavior versus D2PAK
• Thermal performance: RθJA ≈ 40 °C/W; junction temperature Tj(max) = 175 °C for reliable operation at elevated ambient conditions
• Architecture: Split-gate trench design to balance ultra-low on-resistance with high switching speedBy combining very low on-resistance with a high-current, thermally capable package, the MCTL1D0N08Y is positioned to enhance uptime, reduce system losses, and shrink power stages across a wide range of industrial and infrastructure applications.
Original – Micro Commercial Components
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From smartphones to autonomous vehicles to AI infrastructure, today’s breakthroughs are built on nanometer-scale structures inside advanced silicon. As devices pack more performance into smaller geometries, minor defects can cascade into costly delays. Addressing that challenge, Thermo Fisher Scientific has introduced the Thermo Scientific Helios MX1 Plasma Focused Ion Beam Scanning Electron Microscope (PFIB-SEM), a system designed to bring high-resolution subsurface analysis directly into the semiconductor fabrication environment.
Helios MX1 enables chipmakers to visualize and interrogate buried logic, memory, and advanced packaging features without leaving the fab. By placing PFIB-SEM capability on the production floor, manufacturers can move from problem identification to insight much faster, reducing the time engineers spend waiting for lab results and accelerating corrective actions.
At the core of the platform is automated 3D reconstruction and metrology. The system mills, images, and measures complex device stacks with minimal operator intervention, generating volumetric datasets that expose defects and variability hidden beneath the wafer surface. This level of automation is intended to increase throughput and consistency while shortening time-to-data—an increasingly important metric as process complexity and analysis demand rise.
Integrating lab-grade instrumentation into production facilities can also improve time-to-yield. By revealing failure mechanisms and structural anomalies early, Helios MX1 supports faster process tuning, tighter control windows, and more reliable ramp schedules across leading-edge nodes and advanced packaging flows.
Thermo Fisher notes that the industry’s need for in-fab analysis has grown sharply, outpacing what traditional workflows can handle. With Helios MX1, fab teams gain a detailed three-dimensional view of subsurface structures where many critical issues originate, helping them make decisions with greater confidence and speed.
Positioned as a fab-ready solution, Helios MX1 is aimed at customers working on applications ranging from medical devices and automated driving to high-performance and AI computing. By enabling rapid, in-situ insight, the system is designed to help manufacturers reduce cycle times, improve device performance, and sustain quality at scale.
For organizations seeking to modernize process control and failure analysis in high-volume manufacturing, Helios MX1 offers a direct path to see more, sooner—without the delays of traditional lab detours.
Original – Thermo Fisher Scientific
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Micro Commercial Components (MCC) has introduced its new 1200V Trench Field Stop (TFS) IGBT series, designed to deliver high efficiency, durability, and flexibility for demanding power switching applications in both industrial and automotive sectors.
The new IGBT family is housed in the proven TO-247AB package and available in current ratings from 40A to 80A. These devices feature low conduction and switching losses, smooth high-speed transitions, and integrated soft-recovery anti-parallel diodes to ensure low electromagnetic interference and simplified filter design.
Automotive-grade versions of the TFS IGBTs are AEC-Q101 qualified and rated for a maximum junction temperature of 150°C, while industrial variants can operate up to 175°C for extended thermal performance and longer service life. The series is well suited for motor drives, uninterruptible power supplies (UPS), electric vehicle traction and auxiliary systems, and high-power converters that require both efficiency and rugged reliability.
The trench field-stop design provides several key advantages, including:
- Low forward voltage and reduced switching losses, improving overall efficiency and minimizing heat generation
- Integrated fast, soft-recovery diodes for lower EMI and simplified circuit design
- 1200V breakdown voltage with a positive temperature coefficient, ensuring stable current sharing and robust short-circuit protection
Key Features and Benefits
- TO-247AB package for standard compatibility and easy thermal management
- 1200V breakdown voltage for ample design margin
- Wide current range from 40A to 80A
- Fast and smooth switching performance for both hard- and soft-switching topologies
- Low conduction and switching losses for improved system efficiency
- Integrated soft-recovery anti-parallel diode
- Positive temperature coefficient for stable parallel operation
- Automotive-grade options qualified to AEC-Q101 (TJ max = 150°C)
- Industrial-grade variants rated up to TJ max = 175°C
- High short-circuit endurance and avalanche ruggedness
- Suitable for high-frequency operation with reduced EMI
MCC’s 1200V TFS IGBT series provides engineers with a reliable, efficient, and cost-effective solution for next-generation industrial drives, EV power systems, and high-performance power conversion designs.
Original – Micro Commercial Components
