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Toshiba Electronic Devices & Storage Corporation has developed a new silicon carbide (SiC) power module technology for high-frequency inverter applications that delivers lower power losses and enhanced reliability. The technology combines Toshiba’s proprietary Schottky barrier diode (SBD)-embedded SiC MOSFET with an optimized module design to achieve highly reliable and low-loss operation during high-speed switching.
According to simulation results, the new technology can reduce total inverter power losses by approximately 30% during 60 kHz high-frequency operation compared with power modules utilizing conventional SBD-embedded SiC MOSFET structures.
The rapid adoption of artificial intelligence and the continued expansion of data center infrastructure are driving significant increases in electricity consumption. As a result, power systems are under growing pressure to deliver higher efficiency and greater power density. This trend is increasing the importance of power semiconductors capable of operating at higher switching frequencies, particularly in critical applications such as inverters and uninterruptible power supplies (UPS), where both efficiency and compactness are key requirements.
Within this environment, 1200 V-class SiC power modules are expected to play a central role in next-generation power systems. However, further advances in both semiconductor devices and module design are required to fully realize their potential.
Toshiba has previously addressed reliability challenges associated with diode conduction in SiC devices through the development of SBD-embedded SiC MOSFET technology. Conventional structures, however, impose limitations on the layout of channel and SBD regions, making it difficult to simultaneously achieve low on-resistance and high diode reliability. In addition, efforts to reduce total chip area within a power module can improve switching speed but often introduce trade-offs, including higher on-resistance, reduced diode reliability, and compromised thermal performance.
To overcome these challenges, Toshiba developed a new SBD-embedded SiC MOSFET structure that combines a checkerboard-pattern SBD layout with a deep p-type barrier region. By utilizing the electric-field suppression effect of the deep p-type barrier region, the company achieved greater design flexibility and enabled the integrated optimization of multiple device parameters, including the channel, drift layer, JFET region, and gate-drive conditions.
This architecture suppresses localized current concentration, improves current flow through both the channel and drift layer, and enables stable current operation during both on-state and diode conduction modes. As a result, the trade-off between on-resistance and diode reliability is significantly improved.
The new device achieves a specific on-resistance of 1.8 mΩ·cm² at 25°C and 2.7 mΩ·cm² at 150°C, representing approximately a 50% reduction compared with conventional device structures. In addition, SBD current conduction capability per unit area has been increased by approximately 40%.
The newly developed device has been incorporated into a 1200 V-class SiC power module. Through this implementation, Toshiba reduced the total chip area within the module by approximately 36% compared with conventional designs. Despite the reduction in chip area, improvements in device performance, including lower on-resistance and enhanced reliability, enabled lower conduction losses at the module level while maintaining diode reliability.
Toshiba also enhanced the packaging structure and module design through the adoption of a resin-insulated substrate. These improvements reduced thermal resistance per unit area by approximately 25%, improving heat spreading performance and maintaining effective heat dissipation despite the higher thermal density associated with smaller chip dimensions.
The combined device and packaging innovations also contributed to further reductions in switching losses. Simulation results demonstrated that total inverter power losses can be reduced by approximately 30% during 60 kHz high-frequency operation. Additional reductions in switching losses are expected through further optimization of operating conditions, including gate-drive speed.
The company believes the technology will serve as an important platform for achieving higher efficiency and greater miniaturization in power conversion systems, including data center UPS systems, industrial equipment, and renewable energy applications.
Toshiba plans to continue advancing the technology toward practical deployment and mass production while pursuing further improvements in high-frequency operation and overall system performance. The company aims to contribute to higher energy efficiency across power systems and support the development of a more sustainable society.
Original – Toshiba
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Nexperia has expanded its portfolio of 650 V industrial-grade high-power gallium nitride (GaN) FETs, introducing new devices designed to address the growing demands of high-performance power conversion applications. The expanded portfolio includes 35 mΩ, 50 mΩ, and 70 mΩ variants available in industry-standard TO-247-3, TO-247-4, TOLL, and TOLT package options.
The extended product range is intended to provide power engineers with greater flexibility in optimizing efficiency, thermal performance, and power density across a variety of applications, including data center and telecommunications power supplies, renewable energy systems, battery energy storage systems (BESS), industrial drives, and factory automation equipment.
The increasing adoption of artificial intelligence is driving a significant rise in power requirements for server racks, with power supply capacities growing from below 3 kW toward the 5 kW to 12 kW range. At the same time, renewable energy deployment and industrial electrification continue to increase demand for higher switching frequencies and improved power conversion efficiency. As a result, wide-bandgap semiconductor technologies such as GaN are playing an increasingly important role in enabling higher efficiency, reduced system size, and enhanced thermal management in next-generation power architectures.
Andrea Bricconi, Vice President and Head of the GaN Product Group at Nexperia, said the transition toward wide-bandgap power semiconductors is accelerating across industrial, energy, and AI infrastructure applications. He noted that as efficiency, power density, and thermal performance requirements continue to rise, the company remains focused on making GaN technology more accessible and scalable for engineers developing high-power systems. He added that the expansion of the company’s 650 V GaN portfolio represents an important step in that strategy and forms part of its broader roadmap in wide-bandgap technologies.
At the system level, the new GaN devices enable designers to exceed the performance limitations of conventional silicon-based solutions by supporting higher switching frequencies while reducing both switching and conduction losses. Depending on system topology and operating conditions, engineers can achieve higher power density, improved energy efficiency, reduced cooling requirements, and lower overall system costs. The higher switching frequencies also allow for smaller passive components and reduced magnetic component size, supporting more compact and scalable power conversion architectures.
According to Nexperia, in high-power LLC converter stages commonly used in 10 kW to 12 kW AI server power supplies, GaN devices can deliver approximately 0.8% to 1.2% higher efficiency at full load compared with silicon-based alternatives. In addition, power density at the converter stage level can increase by approximately 40% to 70%, enabled by higher switching frequencies and smaller passive components.
For a typical 1 kW high-voltage motor drive, the company states that GaN technology can reduce inverter power losses by approximately 20% to 25%, resulting in efficiency improvements of around 1% to 1.5%. These benefits can also support smaller thermal management systems and higher overall power density.
The devices are built on Nexperia’s proprietary GaN technology platform and combine fast switching performance, low switching losses, controlled dynamic behavior, and robust thermal characteristics. The availability of multiple industry-standard package options allows engineers to optimize both electrical and mechanical design parameters while facilitating integration into existing power conversion systems.
The 35 mΩ and 70 mΩ devices are available immediately in TOLL, TOLT, TO-247-3, and TO-247-4 packages. Additional 50 mΩ variants are scheduled for release during the third quarter of 2026.
Original – Nexperia
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Wolfspeed has introduced its fifth-generation silicon carbide (SiC) technology platform, delivering significant advances in efficiency and performance for next-generation 1200 V and 750 V automotive and industrial power applications.
The new Gen 5 platform builds on the company’s previous generation technology and is designed to address increasing demands for higher efficiency, greater power density, and improved thermal performance across electric vehicles, charging infrastructure, industrial power supplies, and other high-power systems.
According to Wolfspeed, the latest generation establishes a new benchmark for specific on-resistance (RSP), a key performance metric that measures efficiency relative to the active die area of a MOSFET. The technology is intended to help system designers develop more compact and efficient power conversion systems while supporting higher current capability within the same silicon carbide footprint.
“Gen 4 delivered the switching performance breakthrough our customers needed, and less than two years later we are introducing Gen 5, which provides the highest current capability possible within a 5 x 5 mm silicon carbide footprint,” said Dr. Cengiz Balkas, Chief Business Officer at Wolfspeed. “The technology enables a faster path to more efficient, compact, and robust systems designed for real-world operating conditions.”
The company noted that automotive manufacturers continue to face pressure to achieve electrification goals while addressing challenges related to vehicle cost, safety, driving range, and charging infrastructure. Wolfspeed stated that Gen 5 technology was developed to help address these factors by enabling more compact traction inverter designs, improving vehicle efficiency, and supporting optimization of battery sizing.
Beyond electric vehicle traction systems, the technology is also positioned to support applications such as solid-state circuit breakers, EV charging infrastructure, and industrial power conversion systems that require high efficiency and high-temperature operation.
A key focus of the new platform is increasing current capability within a given silicon carbide die area. Wolfspeed reports that Gen 5-based systems can achieve the highest current levels at elevated operating temperatures when compared with competing silicon carbide MOSFETs using a 5 x 5 mm footprint.
The company has further optimized RDS(ON), addressing two critical design challenges. First, the technology reduces system-level conduction losses through an improvement in specific on-resistance of up to 27% compared with currently available competitive 1200 V silicon carbide solutions. The 1200 V QEM50120-025D10 achieves a chip-level RSP of 3.4 mΩ-cm² at 175°C, while the 750 V QEM50075-025D10 achieves a chip-level RSP of 2.0 mΩ-cm² at the same temperature.
Second, the platform reduces the need for additional system-level design margin through an ultra-low RDS(ON) distribution of ±18% across both voltage classes.
Gen 5 retains the body diode architecture introduced with the previous generation while extending continuous junction temperature capability to 200°C, with limited-life operation supported up to 215°C. Wolfspeed stated that the devices maintain low on-resistance while delivering excellent switching performance and reduced overall switching losses through further improvements in reverse recovery charge characteristics.
The company emphasized that Gen 5 has been developed on a commercially mature manufacturing platform designed to provide a low-risk path from design qualification to high-volume production. This marks the second Wolfspeed MOSFET technology generation to be designed, manufactured, and qualified within the company’s 200 mm device fabrication facility in Mohawk Valley, New York.
All new product introductions, sampling activities, and customer validation programs will utilize 200 mm production material, with no additional manufacturing toolsets required for volume production.
“Our planar MOSFET technology continues to offer significant opportunities for innovation,” said Dr. Adam Barkley, Vice President of Power Device and Package Development at Wolfspeed. “Gen 5 was developed using familiar manufacturing processes and tools to provide customers with a low-risk upgrade path for next-generation programs. This approach enables faster validation, qualification, and time-to-market while maintaining the performance and reliability customers expect.”
Samples of the QEM50120-025D10 and QEM50075-025D10 devices are currently available to select customers through Wolfspeed’s direct sales channels. The company expects to introduce additional 750 V and 1200 V Gen 5 products throughout 2026 and into early 2027 based on customer requirements and market demand.
Original – Wolfspeed
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onsemi has introduced GaNEXUS™, a new gallium nitride (GaN) power portfolio designed to deliver higher efficiency, increased power density, and improved thermal performance across a broad range of applications, including AI data centers, industrial automation, robotics, and energy infrastructure.
The initial GaNEXUS portfolio includes GaN FETs spanning voltage ranges from 40 V to 650 V, as well as 650 V GaNEXUS Smart devices that integrate protection features to simplify system design and improve reliability. These products are currently available for sampling.
The launch expands onsemi’s intelligent power portfolio and complements the company’s existing silicon and EliteSiC technologies. By offering multiple semiconductor technologies within a unified portfolio, onsemi aims to provide customers with greater flexibility in optimizing efficiency, thermal performance, system size, and total cost across a wide range of power conversion architectures.
The new portfolio targets applications with growing power requirements, including AI data center power delivery, 48 V power systems, robotics, industrial automation equipment, and energy infrastructure. As AI infrastructure, electrification, and industrial automation continue to accelerate, designers face increasing challenges related to energy consumption, cooling requirements, and system footprint. According to onsemi, AI data centers alone are expected to account for up to 9% of U.S. electricity generation by 2030, while power and cooling can represent up to 40% of total data center operating expenses.
GaNEXUS technology addresses these challenges through faster switching speeds, lower switching losses, higher power density, and improved thermal performance compared with conventional silicon-based solutions. These characteristics enable reductions in the size of magnetic components and cooling systems while improving overall efficiency and responsiveness and lowering system costs in applications ranging from AI data center power delivery and electric vehicle charging to robotics and industrial power systems.
Antoine Jalabert, Vice President of the GaN Division at onsemi, stated that the GaNEXUS portfolio is enabling new approaches to power system design by providing engineers with greater flexibility to address constraints that have traditionally limited conventional power architectures.
When combined with onsemi’s Treo platform for integrated sensing, control, protection, and power management, GaNEXUS devices can be deployed as part of complete system-level power solutions. This approach is intended to simplify design complexity, accelerate development and qualification cycles, reduce thermal and cooling requirements, and optimize performance throughout the power delivery chain.
In low- and medium-voltage applications, including AI server 48 V intermediate bus converters (IBCs), battery backup units (BBUs), and motor drives, GaNEXUS technology enables approximately 30% to 60% smaller magnetic components, 1.5x to 2x higher power density, and efficiency improvements ranging from 0.5% to 2%, depending on system topology. Additional benefits include reduced switching losses, enhanced thermal performance, and improved control stability.
For higher-voltage applications such as AI power shelves, high-voltage DC-DC conversion, power factor correction (PFC), and LLC power stages, GaNEXUS enables up to 60% reductions in magnetic component size in high-frequency AC-DC and resonant converter stages. The technology can also provide 1.5x to 2x higher power density and efficiency gains of approximately 0.5% to 1%, contributing to lower thermal stress and reduced operating costs in high-power systems. The integrated protection capabilities of GaNEXUS Smart devices further simplify power stage design and support faster qualification processes.
The GaNEXUS portfolio is offered in thermally enhanced package options with industry-standard footprints to support design flexibility and dual sourcing strategies. Available package formats include TOLL Bottom Cooling, TOLT Top Cooling, and dual-cooled 3.3 mm × 3.3 mm and 5 mm × 6 mm packages.
Original – onsemi
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JCET Group has introduced its next-generation high-density 3D power module packaging and test solution targeting AI data center applications. Based on the company’s XDPKG-3DSiP (3D System-in-Package) technology platform, the new solution combines high-density multilayer interconnects with a three-dimensional module architecture to enhance power density, energy efficiency, thermal performance, and long-term reliability in advanced computing environments.
The solution integrates power devices, passive components, interconnect structures, and thermal management pathways within a compact package footprint, providing a more efficient and stable platform for next-generation AI computing infrastructure.
JCET offers turnkey packaging and testing services covering both power management integrated circuits (PMICs) and power modules. At the wafer level, the company provides highly consistent bumping services along with specialized wafer-level processes for power management ICs and DrMOS devices. These capabilities establish the foundation for subsequent system integration and are complemented by JCET’s support for System-in-Package (SiP) module assembly and testing, enabling a streamlined transition from chip-level interconnects to complete system-level modules.
To improve power conversion efficiency, JCET has optimized package architecture, interconnect routing, parasitic characteristics, and thermal pathways. The company also incorporates advanced technologies such as copper pillar interconnects and high-density packaging techniques. These enhancements enable power modules to achieve higher energy conversion efficiency under heavy-load operating conditions, helping customers improve server efficiency while reducing the burden on power delivery and cooling systems.
Reliability is a key focus of the new solution. Through the use of ECP substrates, copper pillar interconnects, and a comprehensive lifecycle quality management framework, JCET has strengthened the mechanical robustness and electrical stability of its power modules. The solution is designed to perform under high-current-density operation, prolonged heavy-load conditions, thermal cycling, power cycling, and system-level thermal stress, supporting the stringent uptime and availability requirements of modern AI data centers.
To further increase power density, the company has adopted multilayer stacking techniques, multidimensional structural design, high thermal conductivity interface materials, top-side cooling technology, and vacuum reflow processes. These innovations enable higher integration levels and more compact module designs. Under comparable thermal and design constraints, the new solution delivers more than a 20% increase in power density compared with the previous generation of similar solutions. This improvement allows data center operators to support greater computing workloads within the same rack and board-level footprint while providing additional flexibility in AI server design.
JCET also supports customer product development through advanced co-design and simulation capabilities. By creating virtual digital prototypes and performing coupled electrical, thermal, and mechanical multiphysics simulations, the company enables early-stage optimization of power integrity, thermal performance, and structural reliability. This approach helps reduce development time while improving overall product robustness.
The company noted that demand for its high-density power management solutions has grown rapidly since 2025, particularly in markets focused on high-performance computing. JCET’s capabilities have gained recognition among leading domestic and international customers, and the company reports continued strong market momentum.
Dr. Rebecca Chen, Vice President of JCET and General Manager of the AI & Smart Industry Business Unit, said the company has built a comprehensive portfolio of packaging and test solutions for AI data centers through sustained investment in advanced packaging and system-level integration technologies. She noted that the portfolio spans computing, memory, connectivity, and power applications, strengthening JCET’s position across the AI data center value chain.
Looking ahead, JCET plans to further leverage its end-to-end capabilities in co-design, system-level integration, and testing, together with its global manufacturing network, to collaborate closely with customers and ecosystem partners worldwide in advancing power management technologies for AI data center applications.
Original – JCET
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Nexperia has announced the launch of its 1200 V silicon carbide (SiC) MOSFET portfolio in QDPAK packaging, expanding its wide-bandgap (WBG) product family with a top-side cooled surface-mount solution designed for high-power-density and thermally demanding applications.
The new devices are engineered for high-efficiency, high-voltage power conversion systems, combining the electrical performance of Nexperia’s SiC technology with simplified thermal management and mechanical integration. The result is improved power density, higher output power capability, enhanced efficiency, and better thermal performance in compact system designs.
Available in both industrial-grade and automotive-qualified versions, the portfolio includes RDS(on) options of 17 mΩ, 30 mΩ, 40 mΩ, 60 mΩ, and 80 mΩ. This range provides a scalable QDPAK platform suitable for applications spanning high-power industrial systems to space-constrained designs with demanding thermal and mechanical requirements. The addition of QDPAK complements Nexperia’s existing package portfolio and offers designers greater flexibility in optimizing efficiency, thermal performance, and power density.
The QDPAK package addresses one of the key challenges in high-voltage power conversion systems: effective heat dissipation. By enabling a direct thermal path from the semiconductor die to the heatsink through the top side of the package, the design reduces dependence on the PCB as the primary heat-spreading medium. This allows the thermal management of the semiconductor and PCB to be handled more independently, simplifying overall system design.
According to Nexperia, compared with conventional D2PAK-7 packaging, top-side cooled solutions can deliver up to 3 kW higher output power while operating within comparable thermal limits. They can also provide approximately 40°C additional thermal headroom at the same power level. Building on the company’s existing X.PAK platform, the QDPAK package further extends power handling capability, enabling operation at roughly 3 kW higher power levels at similar case temperatures while offering around 23°C additional thermal headroom under comparable operating conditions.
The devices are well suited for a wide range of applications, including electric vehicle onboard chargers (OBCs), high-voltage DC-DC converters, EV charging infrastructure, photovoltaic inverters, uninterruptible power supplies (UPS), motor drives, and data center power systems. The package enables engineers to optimize both electrical and mechanical aspects of system design while addressing increasingly stringent power density requirements.
Gaetano Pignataro, Head of the SiC & IGBT Product Group at Nexperia, said that as wide-bandgap technologies continue to transform power conversion design, engineers are facing new thermal, mechanical, and efficiency challenges as systems become more compact, denser, and more power intensive. He noted that the company’s 1200 V SiC MOSFETs in QDPAK combine the performance advantages of its SiC technology with the thermal benefits of top-side cooling, providing designers with a practical and scalable solution for next-generation high-power applications.
Nexperia’s 1200 V SiC MOSFETs in QDPAK packaging combine the advantages of top-side cooled surface-mount technology with the electrical characteristics required for efficient high-voltage power conversion. The devices feature excellent RDS(on) temperature stability, supporting predictable conduction losses and reliable operation at elevated junction temperatures. Their low-inductance package design and controlled switching behavior contribute to efficient operation, while the inclusion of a dedicated Kelvin source pin enables faster commutation and improved switching control. This helps designers reduce ringing, manage electromagnetic interference (EMI), and improve overall switching performance in demanding power applications.
Original – Nexperia
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Efficient Power Conversion (EPC) has introduced the EPC91132, a compact three-phase brushless DC (BLDC) motor drive inverter reference design built around the company’s EPC33110 gallium nitride (GaN) three-phase power module. The new platform is designed to support next-generation motion control applications, including humanoid robot joints, robotic hands and wrists, and drone propulsion systems.
The EPC91132 features an ultra-compact design with a diameter of just 23 mm, making it suitable for space-constrained motor drive applications. At the core of the reference design is the EPC33110 GaN module, which leverages EPC’s monolithic GaN integrated circuit technology. The module integrates three half-bridges, gate drivers, bootstrap circuitry, and level shifters within a compact 6 mm × 6.5 mm QFN package.
Powered from a single 5 V supply, the EPC33110 supports operating voltages up to 80 V and offers a typical on-resistance of 11.7 mΩ. The module is compatible with both 3.3 V and 5 V logic inputs, providing flexibility for a variety of control architectures.
As robotic and drone systems continue to demand smaller, lighter, and more efficient power electronics, GaN technology is increasingly being adopted for motor drive applications. The ability to operate at switching frequencies above 100 kHz while minimizing both conduction and switching losses enables improved efficiency, faster dynamic response, higher control bandwidth, and reduced passive component size.
The EPC91132 supports a wide input voltage range from 10 V to 60 V DC and integrates all key functions required for a complete inverter system. These include an onboard microcontroller, regulated power supplies, DC bus voltage sensing, current sensing with integrated overcurrent protection, and a magnetic encoder for rotor position and speed control.
The monolithic architecture of the EPC33110 eliminates the need for discrete gate drivers, significantly reducing component count while simplifying PCB design and accelerating development. The platform can be programmed through a dedicated connector and supports real-time monitoring via an RS-485 communication interface.
To accommodate different application requirements, EPC designed the board with a flexible breakout-ring structure. When the outer ring is removed, the board maintains its 23 mm diameter, allowing direct integration into compact motor systems such as the Vertiq 23-06 drone motor platform.
Performance testing demonstrated that the EPC33110 module can deliver continuous phase currents of up to 11 ARMS in humanoid robotic joint applications operating at 48 V and switching frequencies up to 100 kHz. In drone motor evaluations, the system exhibited strong thermal performance, with only minimal temperature rise observed under airflow generated by the propeller.
According to EPC, the EPC91132 demonstrates how monolithic GaN integration can simplify inverter design while providing the switching speed, power density, efficiency, and thermal performance required by next-generation robotic and aerial mobility systems.
The new reference design is intended to provide engineers with a compact and highly integrated development platform for evaluating GaN-based motor drive architectures in advanced motion-control applications.
Original – Efficient Power Conversion
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SemiQ Inc. has expanded its QSiC™ Dual3 family of silicon carbide (SiC) half-bridge MOSFET modules with the introduction of high-thermal-performance variants featuring aluminum nitride (AlN) substrates and pre-applied thermal interface material (TIM), alongside new 1700 V products. The expanded portfolio is designed to address the increasing power and thermal requirements of applications including AI data center power systems, energy storage infrastructure, solid-state transformers (SSTs), AC-DC converters, and industrial motor drives used in cooling and chiller systems.
The QSiC Dual3 family is designed to support the development of power converters with high conversion efficiency and power density. To further enhance performance, selected modules are available with an optional parallel Schottky barrier diode (SBD), which helps reduce switching losses and improve efficiency, particularly in high-temperature operating environments.
Several devices within the family offer RDS(on) values as low as 1 mΩ while supporting power levels up to 1150 A at 1200 V in a 62 mm × 152 mm package. The portfolio is intended to provide designers with a scalable platform for high-power applications requiring both efficiency and compact system design.
SemiQ developed the QSiC Dual3 series as a replacement option for conventional IGBT modules, enabling system upgrades with minimal redesign. To support reliability requirements, all MOSFET die used in the modules undergo wafer-level gate oxide burn-in testing at voltages exceeding 1450 V. The modules also feature low junction-to-case thermal resistance, enabling simplified thermal management and the use of smaller, lighter heatsinks at the system level.
According to SemiQ, the growing demand for continuous operation in data centers is increasing the importance of efficient power conversion. The company noted that the QSiC Dual3 platform is being deployed in both active front-end power systems and liquid chiller compressor drives, offering reductions in system size and weight compared with traditional silicon IGBT-based solutions while leveraging the efficiency benefits of SiC technology.
The newly introduced high-thermal-performance variants are also being designed into main AC-DC power converters and solid-state transformer architectures. These systems are intended to support direct conversion from medium-voltage AC distribution levels, including 13.8 kV and 35 kV, to high-voltage 800 V DC systems used in modern data center power architectures.
The latest additions to the portfolio are identified by the “-NT” suffix and incorporate AlN substrates together with pre-applied TIM. SemiQ has also expanded the family with new 1700 V devices, including the GCMX1P7C170S4B1(-NT) and GCMS1P7C170S4B1(-NT), which are expected to become available in the coming months.
The expanded lineup includes both standard and Schottky barrier diode-equipped configurations across multiple resistance ratings. New 1200 V modules are available with RDS(on) values of 1 mΩ, 1.4 mΩ, and 2 mΩ, while the new 1700 V variants feature an RDS(on) of 1.7 mΩ. All devices are offered in the S4B1 half-bridge package with AlN substrate and thermal interface material options.
Original – SemiQ
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ROHM Co., Ltd. has developed the new TSC3PAK package for silicon carbide (SiC) MOSFETs, designed to combine the thermal performance of conventional through-hole packages with the manufacturing advantages of surface-mount technology. Measuring 14.00 mm × 18.58 mm × 3.50 mm, the package is intended for power conversion applications in electric vehicles and industrial equipment where efficiency, reliability, and automated assembly are increasingly important.
The TSC3PAK package adopts a top-side heat dissipation structure, placing the heat transfer surface on the top of the package. This design enables automated surface-mount assembly while delivering heat dissipation performance comparable to conventional TO-247-4L through-hole packages. The new package is targeted at applications such as onboard chargers (OBCs) and electric compressors in xEVs, where higher power density and thermal performance are required.
As the adoption of SiC devices expands beyond traction inverters into auxiliary vehicle power systems, manufacturers are increasingly seeking solutions that improve charging performance and vehicle driving range. SiC technology is also gaining traction in industrial applications including photovoltaic inverters and high-performance server power supplies, where energy efficiency is a critical requirement.
Traditionally, SiC power devices have relied on through-hole packages due to their strong thermal performance under high-power operating conditions. However, these packages often require manual assembly processes and can limit efforts to reduce overall system height. Surface-mount SiC devices compatible with automated production lines are therefore becoming increasingly attractive. ROHM developed the TSC3PAK package to address these challenges by providing TO-247-class thermal performance in a surface-mount format.
The package incorporates ROHM’s proprietary groove structure, enabling a creepage distance of 6.66 mm. According to the company, this provides a class-leading creepage specification while maintaining compatibility with widely adopted industry designs. The package supports AC peak voltages of up to 1200 V in Pollution Degree 2 environments, helping simplify insulation design requirements in high-voltage systems while contributing to lower mounting costs and improved system reliability.
Products utilizing the TSC3PAK package are based on ROHM’s fourth-generation SiC MOSFET technology, which combines low ON-resistance with high-speed switching performance. These characteristics help reduce switching losses during power conversion, contributing to improved system efficiency and lower overall power consumption.
Mass production of devices featuring the new package began in June 2026. ROHM also provides simulation models for the entire product lineup through its website to support faster circuit design and evaluation. The company stated that it will continue expanding its SiC MOSFET portfolio to support higher performance, greater miniaturization, and improved reliability across automotive and industrial power electronics applications.
The initial TSC3PAK product lineup includes both consumer and AEC-Q101-qualified automotive devices. The range covers 750 V and 1200 V SiC MOSFETs with typical RDS(on) values ranging from 13 mΩ to 90 mΩ and maximum drain current ratings from 18 A to 102 A.
Target applications include automotive systems such as onboard chargers and electric compressors, as well as industrial equipment including photovoltaic inverters and server power supplies.
Original – ROHM
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GE Aerospace and Wolfspeed have signed a Memorandum of Understanding (MoU) to collaborate on accelerating the adoption of high-voltage silicon carbide (SiC) technologies across industrial, aerospace, and defense applications.
Under the agreement, the two companies plan to work together on the development of standards for high-voltage SiC power modules. The collaboration is intended to support a range of applications, including solid-state transformers, industrial electrification systems, and next-generation aerospace and defense platforms, while also contributing to greater supply chain resilience.
The companies believe that high-voltage SiC power modules can enable more compact, efficient, and reliable systems by reducing the number of series-connected devices required in high-power applications. This simplification can help lower overall system complexity while improving performance across a variety of end markets.
Kris Shepherd, President of Electrical Power at GE Aerospace, noted that both companies have independently contributed to several industry-first innovations and stated that the collaboration aims to support the development of a robust high-power silicon carbide value chain focused on enabling smaller, lighter, and more efficient high-voltage systems.
Robert Feurle, Chief Executive Officer of Wolfspeed, emphasized the growing demand for advanced power technologies driven by artificial intelligence, electrification, and defense applications. He stated that the partnership is focused on supporting domestic sourcing of high-power silicon carbide modules and enabling power systems that improve efficiency while reducing deployment timelines. He also highlighted the readiness of high-voltage silicon carbide technology to address increasing power delivery challenges across multiple industries.
GE Aerospace has recently achieved several milestones in silicon carbide power electronics. The company qualified high-voltage power units for U.S. military ground vehicle applications, moving them into production readiness. In addition, GE Aerospace successfully demonstrated its fourth-generation silicon carbide power MOSFET technology at its Research Center in Niskayuna, New York. The new devices are designed to improve switching speed, efficiency, and durability in high-power applications.
Wolfspeed continues to expand its position in the silicon carbide market through its high-volume 200 mm SiC manufacturing platform. The company recently introduced what it describes as the world’s first commercially available 10 kV silicon carbide MOSFET, a technology that received recognition as a PCIM Top Innovation. The device is intended to provide industrial, artificial intelligence, aerospace, and defense markets with a production-ready solution for high-voltage power conversion applications.
Through the collaboration, GE Aerospace and Wolfspeed aim to support the broader adoption of high-voltage silicon carbide technologies and advance next-generation power systems for critical industrial and defense infrastructure.
Original – Wolfspeed
