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Efficient Power Conversion (EPC) has started mass production of its 100V integrated GaN power-stage IC family, comprising the EPC23108, EPC23109, EPC23110 and EPC23111. The devices target high-performance motion control and power conversion applications including humanoid robots, drones and industrial motor drives.
The monolithic ePower Stage ICs integrate high-side and low-side eGaN FETs, gate drivers and level-shifting circuitry in compact, thermally enhanced QFN packages. The family supports operation up to 100V, with current ratings of 35A and 20A depending on the device.
The integrated power stages incorporate fast fault shutdown, safe gate control during power-loss conditions and support for continuous operation at 100% duty cycle. EPC also offers single-input PWM variants intended to simplify control in multi-axis motor drive systems.
Alongside the production launch, EPC is offering the EPC91128, EPC91129, EPC91130 and EPC91131 three-phase BLDC motor drive evaluation boards. The boards are based on the four new ePower Stage ICs and integrate gate drivers, current and voltage sensing, housekeeping power supplies, temperature monitoring and protection functions.
Applications for the new devices include humanoid robotics, drones, industrial motor drives, medical equipment, synchronous rectification and high-density DC-DC converters. EPC said production volumes are currently ramping through its global distribution network.
EPC is also releasing a technical white paper covering the architecture, design considerations and evaluation platforms for the EPC23108/09/10/11 family, with versions available in English and Chinese. The document provides implementation guidance for robotics, drones and high-performance motor-drive systems.
Original – Efficient Power Conversion
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ROHM has developed its 4th Generation 650V IGBTs for automotive auxiliary systems and industrial equipment, combining low conduction losses with high short-circuit tolerance. Target applications include automotive electric compressors and high-voltage heaters, as well as industrial inverters, motors and compressors.
The new automotive-grade devices achieve VCE(sat) of 1.55V and comply with the AEC-Q101 automotive reliability standard. ROHM redesigned the device structure, manufacturing process and edge termination to increase current density while reducing both conduction and switching losses.
The devices provide a short-circuit withstand time of 7µs at a junction temperature of 25°C. This characteristic is designed to provide sufficient time for inverter and heater control circuits to detect overcurrent conditions and interrupt operation while maintaining low-loss performance during normal operation.
ROHM is positioning the 650V devices primarily for lower-power automotive systems where silicon IGBTs continue to be used alongside the increasing adoption of SiC in higher-power EV applications such as traction inverters. The devices also address industrial motor drives, compressors and other inverter-based equipment.
The initial portfolio includes 12 TO-247N packaged products in the RGAxxTS65HR and RGAxxTS65EHR series, along with 10 SG83xxWN bare-wafer products. ROHM is also developing 12 devices in the four-lead TO-247-4L package under the RGAxxTR65HR and RGAxxTR65EHR series.
TO-247N products and selected bare-wafer versions are already available, with a sample price of $8.50 per unit excluding tax. ROHM also provides design models and supporting materials for circuit development.
The company plans to expand the portfolio with additional devices using the existing packages as well as compact surface-mount IGBTs in TO-263L and top-side-cooled packages.
Original – ROHM
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GaN / LATEST NEWS / PRODUCT & TECHNOLOGY / WBGEPC Space Launches Radiation-Hardened GaN Transistors for AI and High-Performance Computing in Space
August 18, 2026
2 Min ReadEPC Space has introduced three radiation-hardened eGaN power transistors targeting the growing power requirements of next-generation space computing platforms, including AI processors, GPUs and high-performance system-on-chip architectures.
The new EPC7050PCSH, EPC7066PCSH and EPC7065PCSH combine high current capability with very low on-resistance in compact plastic PQFN surface-mount packages featuring backside thermal pads. All three devices are rated for 101 A continuous current, while covering voltage classes of 15 V, 25 V and 40 V.
The 15 V EPC7050PCSH provides typical RDS(on) of 0.28 mΩ, while the 25 V EPC7066PCSH offers 0.37 mΩ. The 40 V EPC7065PCSH has typical RDS(on) of 0.5 mΩ. The devices also feature zero reverse-recovery charge, supporting lower switching losses and higher-frequency operation compared with conventional silicon power devices.
Radiation performance is a central feature of the new family. EPC Space specifies total ionizing dose immunity above 1 Mrad, single-event-effect tolerance to LET(Si) of 85 MeV·cm²/mg and neutron tolerance exceeding 4 × 10¹⁵ n/cm². This combination is intended to provide the radiation robustness required for demanding orbital computing and power-conversion systems.
The devices are optimized for synchronous rectification on the secondary side of intermediate bus converters producing 5 V to 12 V outputs. EPC Space highlights their low RDS(on) × QG figure of merit as an enabler for higher switching frequencies, increased conversion efficiency and greater power density.
The transistors also target voltage regulator modules, intermediate voltage regulators and point-of-load buck converters supplying processor core voltages around 0.8 V. EPC Space specifically identifies space computing platforms based on devices such as Versal SoCs and NVIDIA GPUs as potential applications.
Original – EPC Space
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Micro Commercial Components (MCC) has introduced the FR15140-BP, a 1400V, 15A fast recovery rectifier diode targeting high-voltage power conversion systems that require a combination of high blocking voltage, relatively fast recovery and low conduction losses.
The device offers a maximum reverse recovery time of 500 ns, helping reduce reverse-recovery-related switching losses and EMI in higher-frequency power circuits. Its 1400V repetitive peak reverse-voltage rating provides substantial voltage capability for high-voltage converter and inverter designs.
The FR15140-BP features a typical forward voltage of 1.2V at 15A, supporting lower conduction losses during operation. It also provides a non-repetitive peak surge current capability of 200A, improving robustness against transient and inrush-current conditions.
MCC uses a glass-passivated chip junction to support stable electrical characteristics and reliability under demanding operating conditions. Reverse leakage current is specified below 500 µA at 1400V and 125°C, helping limit reverse and standby losses at elevated temperatures.
The diode is supplied in the established TO-220AC through-hole package, providing a familiar mechanical format for high-power designs requiring heatsink integration and effective thermal management.
Original – Micro Commercial Components
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Micro Commercial Components (MCC) has introduced the MCAC028N15Y, a 150V N-channel power MOSFET targeting applications requiring efficient switching, high current capability and effective thermal management in a compact footprint.
The device combines MCC’s Split Gate Trench MOSFET technology with a thermally enhanced PDFN5060 package measuring 5.0 mm × 6.0 mm. It features a maximum RDS(on) of 28 mΩ and supports continuous drain current of up to 40 A, making it suitable for relatively high-current, mid-voltage power conversion designs.
A total gate charge of 18.2 nC complements the device’s low on-resistance, supporting a balance between conduction and switching performance. MCC says the Split Gate Trench architecture is designed to reduce switching losses and improve switching characteristics, particularly relevant in higher-frequency power conversion and motor-control applications.
Thermal performance is another key feature. The MCAC028N15Y offers junction-to-case thermal resistance of 1.24°C/W, enabling heat to be transferred efficiently from the MOSFET during high-power operation. Combined with the compact PDFN5060 package, this supports higher power density where PCB area and cooling capability are constrained.
Target applications include DC-DC converters, BLDC motor drives, industrial automation equipment, battery management systems and portable power stations. The 150 V rating provides the voltage capability required for power architectures operating above the typical 40 V to 100 V MOSFET range while retaining the switching advantages of a silicon trench device.
For the power semiconductor market, the MCAC028N15Y represents MCC’s continued expansion of its discrete MOSFET portfolio into higher-voltage, higher-power-density applications. The combination of 150 V capability, 28 mΩ RDS(on), 18.2 nC gate charge and compact PDFN packaging positions the device primarily around applications where designers need to balance conduction efficiency, switching performance, thermal management and PCB footprint.
Original – Micro Commercial Components
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Micro Commercial Components (MCC) has introduced the SICW30120DG5M-BP, a new 1200V, 30A silicon carbide (SiC) Schottky Barrier Diode designed for high-voltage and high-frequency power conversion systems.
The device combines a 1200V reverse voltage rating with a 30A average forward current capability, targeting applications where higher switching frequencies, efficiency and power density are key design requirements. It is supplied in an industry-standard TO-247AB through-hole package, supporting effective heat dissipation and straightforward heatsink integration.
Based on Merged PiN Schottky (MPS) SiC technology, the SICW30120DG5M-BP offers zero reverse recovery current. Eliminating reverse recovery losses can reduce switching losses and EMI, making the device particularly suitable for high-frequency converter architectures where conventional silicon rectifiers can impose significant recovery-related losses.
The diode has a maximum forward voltage of 1.6V, helping limit conduction losses, while its 180A surge current capability provides additional robustness against inrush currents and transient overload conditions. The MPS architecture combines the switching characteristics of a Schottky diode with enhanced surge-current capability.
The SICW30120DG5M-BP supports a maximum junction temperature of 175°C, allowing operation in thermally demanding power systems and potentially reducing cooling requirements. Its combination of high blocking voltage, zero reverse recovery and high-temperature capability is particularly relevant for next-generation high-power conversion equipment.
Target applications include switched-mode power supplies, power factor correction circuits, EV charging infrastructure, motor drives, renewable energy systems and industrial power conversion equipment.
The introduction expands MCC’s SiC power semiconductor portfolio into higher-voltage and higher-current applications, addressing growing demand for SiC rectifiers as designers move toward faster-switching, more efficient and increasingly power-dense converter architectures.
Original – Micro Commercial Components
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Micro Commercial Components (MCC) has introduced the MURZ3065P-BP and MURZ6065P-BP, a new family of 650V superfast recovery rectifiers targeting high-frequency power conversion applications across industrial, renewable energy and automotive systems.
The new rectifiers combine a 650V reverse voltage rating with average forward current ratings of 30A for the MURZ3065P-BP and 60A for the MURZ6065P-BP. Both devices are housed in rugged TO-247AD packages designed to provide effective thermal dissipation and straightforward heatsink mounting in high-power systems.
A key feature of the series is its fast reverse recovery performance. The devices offer reverse recovery times of 95ns and 105ns, helping reduce switching losses as converter operating frequencies increase. Soft recovery characteristics and low reverse recovery charge also help limit electromagnetic interference and improve switching behavior.
Typical forward voltage is 1.29V and 1.28V, respectively, helping reduce conduction losses and improve overall conversion efficiency. The devices also feature near-zero temperature coefficient characteristics, supporting stable forward-voltage and switching behavior across a broad operating temperature range and simplifying thermal management.
For applications exposed to transient overloads, the rectifiers provide surge current capability of up to 220A and 400A, depending on the device. MCC also uses planar-structure die technology to support device reliability and manufacturing consistency.
The combination of high current capability, fast and soft recovery, low forward voltage and robust thermal characteristics makes the MURZ Series suitable for power factor correction circuits, uninterruptible power supplies, industrial power supplies, EV charging equipment, welding systems and inverter applications.
The launch expands MCC’s high-voltage rectifier portfolio as power electronics designers seek lower switching and conduction losses in increasingly high-frequency and power-dense converter architectures.
Original – Micro Commercial Components
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Power Integrations has announced a major extension of its PowiGaN gallium nitride technology to a 2200 V rating, which the company says exceeds the voltage capability of other commercially available GaN technologies. The development significantly expands the addressable voltage range for GaN and targets emerging high-voltage applications including AI data centers, electric vehicles, renewable energy, battery storage and HVDC infrastructure.
The 2200 V technology is particularly relevant as power architectures migrate toward higher DC bus voltages to improve efficiency and power density. Power Integrations highlighted next-generation AI data centers as a major opportunity, with industry roadmaps moving beyond today’s 800 VDC architectures toward potential 1500 V distribution systems. The additional voltage headroom provided by 2200 V GaN could enable designers to use GaN in applications where voltage requirements have historically favored silicon carbide.
Power Integrations is already extending GaN into these higher-voltage systems. Its 1700 V PowiGaN ICs are being designed into single-stage auxiliary power applications in data centers, while 1250 V devices provide an alternative to stacked lower-voltage switches in the main power path of 800 VDC architectures. The new 2200 V platform pushes this strategy further by providing sufficient voltage margin for future higher-voltage buses.
The development is strategically important for the competitive positioning of GaN versus SiC. GaN has traditionally delivered advantages in switching frequency and power density but has been constrained by lower commercially available voltage ratings. High-voltage applications have therefore remained an important stronghold for SiC. By extending GaN to 2200 V, Power Integrations is attempting to bring GaN’s high-frequency characteristics into applications previously considered beyond its practical voltage range.
The potential system-level impact could be significant. Higher-voltage GaN devices could reduce the need to series-connect multiple lower-voltage switches, simplifying power stages while reducing component count and potentially improving power density and reliability. Power Integrations specifically identifies solar inverters, HVDC systems, advanced industrial power conversion, EV systems and data center infrastructure as potential applications.
The announcement also highlights how AI infrastructure is accelerating technology competition between GaN and SiC. Yole Group analyst Roy Dagher noted that GaN’s historical voltage ceiling has limited its participation in the main power path of high-voltage data center architectures, leaving much of this opportunity to SiC. According to the figures cited in the announcement, Yole expects the power GaN device market to reach $3.5 billion by 2031.
Original – Power Integrations
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Para Light Electronics has launched its ThermaFlat I and ThermaFlat II silicon carbide MOSFET families, targeting a key thermal challenge in high-power conversion: the increase in MOSFET on-resistance as junction temperature rises. The portfolio targets AI and data-center power supplies, battery backup and UPS systems, EV charging, energy storage, photovoltaic inverters, variable-frequency drives and other industrial power applications.
The central feature of the new platform is what Para Light calls Ultra-Low RDS(on) Drift technology. Conventional SiC MOSFETs experience increasing on-resistance at elevated junction temperatures, which raises conduction losses and can increase cooling requirements. ThermaFlat is designed to keep on-resistance comparatively stable across a broad operating-temperature range, with the objective of improving full-load efficiency and simplifying thermal design.
In benchmark testing cited by Para Light, its 650V, 21 mΩ TO-247 device showed only approximately 8% RDS(on) variation as junction temperature increased from -25°C to +125°C. The company says this is significantly lower than the temperature coefficients of conventional SiC devices. Para Light also states that its 1200V ThermaFlat family exhibits similarly low temperature coefficients for high-power conversion architectures.
Broad portfolio spans 650V, 1200V and 1700V devices. The 650V lineup includes devices with RDS(on) ratings ranging from 8 mΩ to 36 mΩ, while the 1200V portfolio ranges from 10 mΩ to 35 mΩ. A 1700V includes a16 mΩ device. Package options include TO-247-3L, TO-247-4L, TOLL-8L and Q-DPAK, with several products incorporating Kelvin-source connections.
Para Light has divided the platform into two architectures. ThermaFlat I covers 650V and 1200V devices in industry-standard packages and is positioned for mainstream converter topologies. ThermaFlat II combines the low RDS(on) drift characteristic with a higher gate-threshold-voltage architecture intended to improve noise immunity and reduce false turn-on. According to Para Light, ThermaFlat II can operate without requiring a negative gate-off supply, potentially simplifying gate-driver circuitry, reducing component count and lowering system cost.
The company identifies AI data-center power supplies as one of the principal target markets. Other applications include battery backup units, UPS systems, EV charging stations, grid-connected energy-storage charging and discharging systems, photovoltaic inverters, variable-frequency drives and industrial automation. Para Light says it is continuing to expand the portfolio with additional voltage, current and package configurations.
Para Light is also positioning manufacturing and supply-chain capabilities as part of the offering. The company highlights wafer yields, dedicated in-house packaging and process controls, along with vertical integration covering device design, packaging and supply-chain management. It also cites strategic production planning and safety-inventory frameworks as measures intended to improve supply resilience for international customers.
Original – Para Light Electronics
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Micro Commercial Components (MCC) has introduced the MIP50R12E1AML-BP and MIP75R12E2ML-BP, expanding its portfolio of 1200 V IGBT modules for high-power industrial applications. Available in industry-standard E1A and E2 packages, the new modules are designed to improve efficiency, thermal performance, and reliability in demanding power conversion systems.
The MIP Series is offered in 50 A and 75 A current ratings and incorporates low collector-emitter saturation voltage (VCE(sat)), integrated ultra-fast soft-recovery freewheeling diodes, and low-inductance package construction to reduce switching losses, improve efficiency, and enhance overall system performance.
The modules feature short-circuit withstand capability of up to 8 μs and support a maximum junction temperature of 175°C, enabling reliable operation under harsh electrical and thermal conditions. An integrated NTC thermistor provides accurate temperature monitoring for improved thermal management and system protection.
According to MCC, the modules are intended for a wide range of industrial applications, including motor drives, uninterruptible power supplies (UPS), welding equipment, servo drives, industrial inverters, renewable energy converters, and industrial power supplies.
Key features include:
- 1200 V collector-emitter voltage (VCE)
- 50 A (MIP50R12E1AML-BP) and 75 A (MIP75R12E2ML-BP) current ratings
- Typical VCE(sat) of 2.05 V and 1.9 V
- Integrated ultra-fast soft-recovery anti-parallel freewheeling diodes
- Low switching losses for improved conversion efficiency
- 8 μs short-circuit withstand capability
- Low-inductance package design
- Integrated NTC thermistor for temperature monitoring
- Maximum junction temperature of 175°C
- Industry-standard E1A and E2 module packages
- RoHS compliant
Original – Micro Commercial Components
