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Infineon Technologies AG has introduced the CoolGaN™ bidirectional switch (BDS) 650 V G5, a gallium nitride (GaN) switch capable of actively blocking voltage and current in both directions. Featuring a common-drain design and a double-gate structure, it leverages Infineon’s robust gate injection transistor (GIT) technology to deliver a monolithic bidirectional switch, enabled by Infineon’s CoolGaN technology. The device serves as a highly efficient replacement for traditional back-to-back configurations commonly used in converters.
The bidirectional CoolGaN switch offers several key advantages for power conversion systems. By integrating two switches in a single device, it simplifies the design of cycloconverter topologies, enabling single-stage power conversion, eliminating the need for multiple conversion stages. This leads to improved efficiency, increased reliability, and a more compact design. BDS-based microinverters also benefit from higher power density and reduced component count, which simplifies manufacturing and reduces costs. Additionally, the device supports advanced grid functions such as reactive power compensation and bidirectional operation.
As a result, this solution holds significant potential across a wide range of applications, including:
Microinverters: The CoolGaN bidirectional switch enables simpler and more efficient microinverter designs, reducing both size and cost. This makes microinverters more attractive for residential and commercial solar installations.
Energy Storage Systems (ESS): In ESS applications such as battery chargers and dischargers, the switch allows for more efficient and reliable energy storage and release.
Electric Vehicle (EV) Charging: In EV charging systems, the BDS switch supports faster, more efficient charging while also enabling vehicle-to-grid (V2G) functionality, where energy stored in the vehicle battery can be fed back into the grid.
Motor control: The CoolGaN BDS is ideal for use in Current Source Inverters (CSI) for industrial motor drives. Compared to traditional Voltage Source Inverters (VSI), CSIs offer benefits such as:
- Producing a sinusoidal output voltage, which supports longer cable runs, reduced losses, and improved fault tolerance.
- Replacing the DC-link capacitor with an inductor, improving high-temperature performance and short-circuit protection.
- Higher efficiency at partial loads, lower EMI, inherent buck-boost capability for voltage variation, and scalability for parallel operation.
These features make CSIs a more robust and efficient alternative for industrial motor applications.
AI data centers: In AI server power supplies, bidirectional switches like CoolGaN support higher switching frequencies and power density in architectures such as Vienna rectifiers and H4 PFCs. A single CoolGaN BDS can replace two conventional switches, reducing component count, cost, size, and overall power losses.
The CoolGaN bidirectional switch (BDS) 650 V G5 is available for ordering now as well as samples of the 110 mΩ product. More information is available here.
Original – Infineon Technologies
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To enable the next generation of solid-state power distribution systems, Infineon Technologies AG is expanding its silicon carbide (SiC) portfolio with the new CoolSiC™ JFET product family. The new devices deliver minimized conduction losses, solid turn-off capability, and high robustness, making them ideal for advanced solid-state protection and distribution.
With robust short-circuit capability, thermal stability in linear mode, and precise overvoltage control, CoolSiC JFETs enable reliable and efficient system performance in a wide range of industrial and automotive applications, including solid-state circuit breakers (SSCBs), AI data center hot-swaps, eFuses, motor soft starters, industrial safety relays, and automotive battery disconnect switches.
“With CoolSiC JFET, we are addressing the growing demand for smarter, faster, and more robust power distribution systems,” says Dr. Peter Wawer, Division President Green Industrial Power at Infineon Technologies. “This application-driven power semiconductor technology is specifically designed to provide our customers with the tools they need to solve the complex challenges in this rapidly evolving space. We are proud to introduce devices that achieve best-in-class R DS(ON), setting a new standard for SiC performance and reaffirming Infineon’s leadership in the field of wide-bandgap technology.”
The first generation of CoolSiC JFETs features ultra-low R DS(ON) starting at 1.5 mΩ (750 V BDss) and 2.3 mΩ (1200 V BDss), significantly reducing conduction losses. The bulk-channel optimized SiC JFET offers high robustness under short-circuit and avalanche failure conditions. Housed in a Q-DPAK top-side cooled package, the devices support easy paralleling and scalable current handling, enabling compact, high-power systems with flexible layout and integration options. Their predictable switching behavior under thermal stress, overload and fault conditions provides maximum long-term reliability in continuous operation.
To meet the thermal and mechanical challenges of harsh application environments, CoolSiC JFETs leverage Infineon’s advanced .XT interconnection technology with diffusion soldering. This significantly improves transient thermal impedance and robustness under pulsed and cyclic loads typical of industrial power systems. Tested and qualified under real-world operating conditions of solid-state power switches and based on the industry-standard Q-DPAK package, the devices enable quick and seamless design integration in both industrial and automotive applications.
Engineering samples of the new CoolSiC JFET family will be available later in 2025, with volume production starting in 2026. The product portfolio will be further expanded with a variety of packages and modules. The product family has been successfully demonstrated at the Infineon booth at PCIM Europe 2025 in Nuremberg. More information is available at www.infineon.com/jfet.
Original – Infineon Technologies
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Navitas Semiconductor introduced a new level of reliability to meet the system lifetime requirements of the most demanding automotive and industrial applications. Navitas’ latest generation of 650 V and 1200 V ‘trench-assisted planar’ SiC MOSFETs combined with an optimized, HV-T2PaK top-side cooled package, delivers the industry’s highest creepage of 6.45 mm to meet IEC-compliance for applications up to 1200V.
Navitas’ HV-T2PaK SiC MOSFETs significantly increase system-level power density and efficiency while improving thermal management and simplifying board-level design and manufacturability. Target applications include EV on-board chargers (OBC) & DC-DC converters, data-center power supplies, residential solar inverters & energy storage systems (ESS), EV DC fast chargers, and HVAC motor drives.
AEC-Q101 is an automotive industry standard developed by the Automotive Electronics Council (AEC) to establish common part-qualification and quality-system standards. Navitas has created an industry-first benchmark, ‘AEC-Plus’*, indicating parts qualified above and beyond the existing AEC-Q101 and JEDEC product qualification standards. This new benchmark showcases Navitas’ deep understanding of system-level lifetime requirements and a strong commitment to enabling rigorously designed and validated products for demanding mission profiles in automotive and industrial applications.
The ‘AEC-Plus’ qualification standards extend further into rigorous multi-lot testing and qualification. Key additions to the existing AEC-Q101 requirements include:
- Dynamic reverse bias (D-HTRB) & dynamic gate switching (D-HTGB) to represent stringent application mission profiles
- Over 2x longer power & temperature cycling
- Over 3x longer duration for static high-temperature, high-voltage tests (e.g. HTRB, HTGB).
- 200°C TJMAX qualification for overload operation capability
Navitas’ HV-T2PaK top-side cooled package, in an industry-standard compact form factor (14 mm x 18.5 mm), is optimized with an innovative groove design in the package mold compound that extends the creepage to 6.45 mm without reducing the size of the exposed thermal pad and ensuring optimal heat dissipation. In addition, the exposed thermal pad has a nickel, nickel-phosphorus (NiNiP) plating, as opposed to tin (Sn) plating from existing TSC package solutions, which is critical to preserving the post-reflow surface planarity of the exposed pad and ensuring thermally efficient and reliable attachment to the thermal interface material (TIM).
Enabled by over 20 years of SiC technology innovation leadership, Navitas’ GeneSiC™ ‘trench-assisted planar SiC MOSFET technology’ offers up to 20% lower on-resistance under in-circuit operation at high temperatures compared to competition and superior switching figure-of-merits which result in the lowest power losses across a wider operating range. All GeneSiC™ SiC MOSFETs have the highest-published 100%-tested avalanche capability, excellent short-circuit withstand energy, and tight threshold voltage distributions for easy paralleling.
The initial HV-T2PaK portfolio includes 1200 V SiC MOSFETs with on-resistance ratings ranging from 18 mΩ to 135 mΩ and 650 V SiC MOSFETs with on-resistance ratings ranging from 20 mΩ to 55 mΩ. Lower on-resistance (<15 mΩ) SiC MOSFETs in HV-T2PaK package will be announced later in 2025.
Original – Navitas Semiconductor
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Nexperia announced a range of highly efficient and robust automotive qualified silicon carbide (SiC) MOSFETs with RDS(on) values of 30, 40 and 60 mΩ. These devices (NSF030120D7A0-Q, NSF040120D7A1-Q, NSF060120D7A0-Q), which deliver industry-leading figures-of-merit (FoM), were previously offered in industrial grade and have now been awarded AEC-Q101 certification.
This makes them suitable for automotive applications like onboard chargers (OBC) and traction inverters in electric vehicles (EV) as well as for DC-DC converters, heating ventilation and air-conditioning systems (HVAC). These switches are housed in the increasingly popular surface mounted D2PAK-7 package which is more suitable for automated assembly operations than through-hole devices.
RDS(on) is a critical performance parameter for SiC MOSFETs as it impacts conduction losses. However, concentrating on the nominal value, neglects the fact that it can increase by more than 100% as device operating temperatures rise, resulting in considerable rise of conduction losses. The temperature stability is even more critical when SMD package technologies are used compared to through-hole technology since devices are cooled through the PCB.
Nexperia identified this as a limiting factor in the performance of many currently available SiC devices and leveraged the features of its innovative process technology to ensure that its new SiC MOSFETs offer industry-leading temperature stability, with the nominal value of RDS(on) increasing by only 38% over an operating temperature range from 25 °C to 175 °C. This feature enables customers to address higher output power in their applications achieved with a higher nominal 25°C rated RDS(on) from Nexperia compared to other vendors without sacrificing performance.
“This feature allows to get more power out of the selected Nexperia SiC MOSFET devices compared to similarly rated RDS(on) devices from other vendors, delivering a clear cost advantage for customers on semiconductor level. Additionally, relaxed cooling requirements, more compact passive components, and higher achievable efficiency allow customers more degrees of freedom in their design and lower total cost of ownership. We’re especially excited that these products are now available for the automotive market, where their performance and efficiency benefits can make a real difference in next-generation vehicle designs”, says Edoardo Merli, SVP and Head of Business Group Wide Bandgap, IGBT & Modules (WIM).
Nexperia is planning to release automotive-qualified versions of its 17 mΩ and 80 mΩ RDS(on) SiC MOSFETs in 2025.
Original – Nexperia
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SemiQ Inc has announced the expansion of its Gen3 SiC MOSFET offering, launching a 1200 V TSPAK-packaged series. SemiQ unveiled the new devices for the first time at PCIM 2025 in Nuremberg at Alfatec’s stand (Hall 4A, Booth109).
The four-strong series of Gen3 MOSFETs delivers continuous drain currents of between 27 and 101 A and pulsed drain current from 70 to 350 A, with device resistances (RDSon) ranging from 80 to 16 mΩ respectively.
All devices are operational to 175oC and have been tested to voltages greater than 1400 V, undergoing wafer-level burn-in testing (WLBI) and UIL avalanche testing up to 800 mJ (RDSon = 16 mΩ, 160 mJ for the 80 mΩ device).
The easy-to-parallel devices implement top-side cooling and an isolated thermal path with a ceramic isolated back paddle. The package includes a driver source kelvin pin for gate driving as well as a gate pin, 5 source pins and a drain tab.
The TSPAK MOSFETs offer a lower capacitance, reduced switching losses, longer clearance distance and higher overall system efficiency. SemiQ is targeting the devices at a range of industrial and EV applications, including solar inverters and energy storage, induction heating and welding, EV charging stations and on-board chargers, motor drives, high-voltage DC/DC converters and UPS/switch mode power supplies.
Dr. Timothy Han, President at SemiQ said: “The launch of the TSPAK Gen3 SiC MOSFET family enables the creation of higher power density supplies, at a lower system cost as well as more compact system designs at large scale.”
All devices in the series are housed in a 18.6 x 14.0 x 3.5 mm TSPAK package, have a zero gate voltage drain current of 0.1 µA, a -10/10 nA gate-source leakage current and a 3.5 V gate threshold voltage (cited characteristics measured at 25oC). The series is available immediately.
The series’ cycle times range from 49 ns (80 mΩ MOSFET) to 114 ns (16 mΩ), and the devices have total switching energy of between 153 µJ (80 mΩ MOSFET) and 1565 µJ (16 mΩ). Key specifications are shown in the table below – all characteristics shown have been measured at 25oC.
GP3T016A120TS GP3T020A120TS GP3T040A120TS GP3T080A120TS Drain source voltage VDS 1200 V 1200 V 1200 V 1200 V Drain source on resistance RDSon 16 mΩ 18 mΩ 38 mΩ 80 mΩ Continuous drain current ID 101 A 89 A 50 A 27 A Pulse drain current ID.pulse 350 A 280 A 140 A 70 A Power dissipation Ptot 273 W 250 W 158 W 102 W Thermal resistance RthJC 0.49°C/W 0.53°C/W 0.83°C/W 1.25°C/W Turn on switching energy EON 1333 µJ 986 µJ 639 µJ 117 µJ Turn off switching energy EOFF 232 µJ 159 µJ 101 µJ 36 µJ Turn on delay tDon 19 ns 80 ns 15 ns 10 ns Rise time tR 13 ns 10 ns 9 ns 3 ns Turn off delay tDoff 64 ns 60 ns 32 ns 20 ns Fall time tF 18 ns 17 ns 10 ns 16 ns 1200V Gen3 SiC TSPAK MOSFET series is available in parts: GP3T016A120TS (16mΩ, 101A), GP3T020A120TS (18mΩ, 89A), GP3T040A120TS (38mΩ, 50A), and GP3T080A120TS (80mΩ, 27A).
Original – SemiQ
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WeEn Semiconductors showcased its silicon carbide (SiC) MOSFETs and Schottky Barrier Diodes (SBDs) in highly thermally efficient TSPAK packages at this year’s PCIM Expo conference and trade fair. The new packages enable engineers to improve efficiency, reduce form factors, extend reliability and lower EMI across a variety of high-power applications.
Providing effective heat dissipation from a thermal pad on the surface of the SiC device rather than via a PCB substrate, the company’s top-side cooling TSPAK technologies can reduce J-A (junction-to-ambient) thermal resistance by up to 16% compared to conventional devices. As a result, the packages help to simplify thermal management design, lower losses and increase power density.
By minimizing or eliminating the need for complex PCB cooling, TSPAK devices reduce component count and drive down system costs. In addition, the ability to support a greater number of power cycle extends reliability, while reduced EMI helps engineers to simplify system EMC compliance. EMI reduction derives from the fact that the circulating current that creates the magnetic field is no longer blocked by the thermal vias necessary in conventional bottom-side cooling designs and can return to the source directly, minimizing magnetic interference.
WeEn’s TSPAK SiC technologies are ideally suited to on-board chargers and high-voltage-to-low-voltage DC-DC converters in electric vehicles (EVs), automotive HVAC compressors, vehicle charging stations, photovoltaic (PV) renewable energy systems and power supplies for computing and telecom servers. TSPAK MOSFETs offer voltage ratings from 650 V to 1700 V and on resistance (RDS(ON)) ratings from 20 to 150mΩ. TSPAK SBDs are available with voltages from 650 V to 1200 V and current ratings of 10 A to 40 A.
All products are available in industrial grade and automotive grade variants.
Original – WeEn Semiconductors
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Infineon Technologies AG has been a pioneer in the market introduction of silicon carbide (SiC) power devices and trench technology for SiC MOSFETs, combining excellent performance with high robustness. Today, the CoolSiC™ product offering spans from 400 V to 3.3 kV and covers a broad range of applications, including automotive drivetrains, EV charging, solar energy systems, energy storage, and high-power traction inverters.
Building on a solid track record in SiC business development and leveraging its position as the innovator of charge-compensating devices in silicon (CoolMOS™), Infineon is now introducing a trench-based SiC superjunction (TSJ) technology concept.
“With the introduction of the TSJ concept, we are significantly expanding the technological capabilities of silicon carbide,” said Peter Wawer, President of Infineon’s Green Industrial Power Division. “The combination of trench and superjunction technology enables higher efficiency and more compact designs – an important step for applications requiring the highest levels of performance and reliability.”
Infineon is committed to gradually expanding its CoolSiC product portfolio, leveraging SiC TSJ technology. This expansion will encompass a diverse range of package types, including discretes, molded and frame-based modules, as well as bare dies. The extended portfolio will cater to a broad spectrum of applications, targeting both the automotive and industrial sectors.
The first products based on the new technology will be 1200 V in Infineon ID-PAK for automotive traction inverters and combine the advantages of trench technology and superjunction design, capitalizing on Infineon’s more than 25 years of experience in SiC and silicon-based superjunction technology (CoolMOS). This scalable package platform supports power levels of up to 800 kW, enabling a high degree of system flexibility. Key benefits of the technology include increased power density, achieved through an up to 40 percent improvement in R DS(on)*A, allowing for more compact designs within a given power class. Additionally, the 1200 V SiC trench-superjunction concept in ID-PAK enables up to 25 percent higher current capability in main inverters without compromising short-circuit capability.
This advancement also results in enhanced overall system performance, delivering improved energy efficiency, reduced cooling requirements, and higher reliability for demanding automotive and industrial applications. Moreover, the system benefits from reduced parallelization requirements, which simplify the design process and lower overall system costs. With these innovations, the Infineon ID-PAK package equipped with SiC TSJ technology contributes to the development of more efficient and cost-effective traction inverter designs for automotive applications.
“As the global number one in automotive semiconductors, Infineon sets the pace of innovation and helps build the bridge between technological progress of vehicles and sustainable mobility,” said Peter Schiefer, President of Infineon’s Automotive Division. “Our new trench-based SiC superjunction technology brings further value to electric vehicle drivetrains enabling higher efficiency and system design simplicity.”
As an early customer, Hyundai Motor Company development teams will engage with Infineon’s trench-superjunction technology, leveraging its benefits to enhance their EV offerings. This partnership is expected to drive the development of more efficient and compact EV drivetrains.
Initial ID-PAK 1200 V samples are now available for selected automotive drivetrain customers. The SiC TSJ-based ID-PAK 1200 V package is expected to be ready for volume production in 2027.
Original – Infineon Technologies
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Cambridge GaN Devices (CGD) announced that Inventchip, a leading provider of SiC power devices and IC solutions headquartered in Shanghai, has successfully demo’d a 2.5 kW GaN-based CCM totem-pole PFC reference design using CGD’s ICeGaN® gallium nitride ICs. A key feature is ease-of use. ICeGaN ICs integrate interface circuitry and protection on the same GaN die as the HEMT. Therefore, any standard driver IC can be used. The Inventchip IVCC1104 totem pole PFC controller IC is also simple to use with no programming required. It offers optimized AC zero-crossing control, low THD and high robustness against AC disturbance.
DI CHEN | DIRECTOR, TECHNICAL MARKETING AND BUSINESS DEVELOPMENT, CGD
“Inventchip had an existing 2.5kW TPPFC reference design based on its controller and gate drivers using SiC MOSFETs in TO-247 packages. To evaluate the performance of GaN instead, Inventchip designed a TO-247 adapter board using our P2 25mΩ ICeGaN ICs and the ICeGaN design works perfectly without any modification of their circuits. It has demonstrated that the ICeGaN can significantly shorten the learning curve and allow engineers to bring new product faster to market.”DR. ZHONG YE |CTO , INVENTCHIP
“By using a TO247-4 adapter board to solder on a DFN-packaged ICeGaN device for a quick test on our EVM, despite the relatively long gate drive path and the extended drive power supply trace, the board was powered up successfully at the first shot with clean switching waveform. No abnormalities or shoot-through was observed from no-load to full-load conditions. The GaN’s performance is very impressive. The CGD GaN device has proven to be very noise-immune, user-friendly and highly efficient.”Having proved its efficiency and power density in low power charger designs, GaN is now being adopted by makers of server and data centre PSUs, inverters, industrial brick DC/DC converters and LED drivers. Soon, EV inverter drives of over 100 kW are expected to transition to GaN too. ICeGaN technology is especially suitable at higher power levels because of its proven reliability and robustness.
Original – Cambridge GaN Devices
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Power Integrations announced five new reference designs targeting 800 V automotive applications based on the company’s 1700 V InnoSwitch™3-AQ flyback switcher ICs. Spanning power levels from 16 W to 120 W, the designs leverage both wound and low-profile planar transformers and target automotive applications such as DC-DC bus conversion, inverter emergency power, battery management and power supplies for auxiliary systems. The designs feature Power Integrations’ new wide-creepage InSOP™-28G package, which supports 1000 VDC on the primary side while providing appropriate creepage and clearance between pins in pollution degree 2 environments.
“The new InSOP™-28G package, with its wide 5.1 mm drain-to-source pin creepage distance, addresses the critical need for enhanced safety and reliability in high-voltage applications,” said Mike Stroka, product marketing engineer at Power Integrations. “It provides sufficient isolation that conformal coating can be eliminated, saving a manufacturing process step and associated qualification effort. The InnoSwitch3-AQ IC, featuring a 1700 V silicon-carbide (SiC) switch, is an ideal solution for 800 V vehicles, simplifying manufacturing while enhancing overall system performance and reliability.”
Available from www.power.com, the following reference designs are all isolated flyback converters based on the 1700 V-rated CV/CC InnoSwitch3-AQ switcher ICs. The three reference designs kits (RDKs) and two design example reports (DERs) are:
- RDK-994Q— 35 W ultra-low-profile traction inverter gate-drive or emergency power supply with 40-1000 VDC input and 24 V output;
- RDK-1039Q— 18 W power supply with planar transformer for traction inverter gate driver or emergency power supply;
- RDK-1054Q— 120 W power supply with planar transformer, designed to shrink or eliminate heavy, bulky 12 V batteries;
- DER-1030Q— 20 W four-output power supply—one emergency power supply (EPS) with 24.75 V output and three gate-drive power supplies with 25.5 V output;
- DER-1045Q— 16 W four-output power supply—one 14 V EPS output and three gate-drive outputs with split +18 V / -5 V rails.
Power Integrations’ 1700 V-rated SiC-based CV/CC InnoSwitch3-AQ switching power supply ICs deliver up to 120 watts of output power. The highly integrated ICs reduce power supply bill of materials (BOM) count by as much as 50 percent, saving space, enhancing system reliability and easing component sourcing challenges. Devices start up with as little as 30 volts on the drain pin without external circuitry, which is often a critical requirement for functional safety.
Additional protection features include input under-voltage, output over-voltage and over-current limiting. Power consumption is less than 15 mW at no-load. The ICs also incorporate synchronous rectification and a valley switching, discontinuous/continuous conduction mode (DCM/CCM) flyback controller capable of delivering greater than 91 percent efficiency.
Pricing for the new 1700 V-rated InnoSwitch3-AQ switching power supply ICs starts at $6 per unit for 10,000-unit quantities. The reference design kits range from $50 to $100 per kit. Design engineers can enter a drawing to win one of the reference design kits at pages.power.com/rev-up. For further information, contact a Power Integrations sales representative or one of the company’s authorized worldwide distributors – DigiKey, Newark, Mouser and RS Components, or visit power.com.
Original – Power Integrations
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With the rapid growth of AI data centers, the increasing adoption of electric vehicles, and the ongoing trends in global digitalization and reindustrialization, global electricity demand is expected to surge. To address this challenge, Infineon Technologies AG is introducing the EasyPACK™ CoolGaN™ Transistor 650 V module, adding to its growing GaN power portfolio.
Based on the Easy Power Module platform, the module has been specifically developed for high-power applications such as data centers, renewable energy systems, and DC electric vehicle charging stations. It is designed to meet the growing demand for higher performance while providing maximum ease of use, helping customers accelerate their design processes, and shorten time-to-market.
“The CoolGaN-based EasyPACK power modules combine Infineon’s expertise in power semiconductors and power modules,” says Roland Ott, Senior Vice President and Head of the Green Energy Modules and Systems Business Unit at Infineon. “This combination offers customers a solution that meets the increasing demand for high-performance and energy-efficient technologies in applications such as data centers, renewable energy, and EV charging.”
The EasyPACK CoolGaN module integrates 650 V CoolGaN power semiconductors with low parasitic inductances, achieved through compact die packing – enabling fast and efficient switching. Delivering up to 70 kW per phase with just a single module, the design supports compact and scalable high-power systems. Furthermore, by combining Infineon’s .XT interconnect technology with CoolGaN options, the module enhances both performance and reliability.
The .XT technology is implemented on a high-performance substrate, significantly reducing thermal resistance, which in turn translates to higher system efficiency and lower cooling demands. This results in increased power density and excellent cycling robustness, even under demanding operating conditions. With support for a broad range of topologies and customization options, the EasyPACK CoolGaN module addresses diverse requirements in industrial and energy applications.
Infineon has sold well over 70 million EasyPACK modules with various chipsets for a wide range of industrial and automotive applications. With the introduction of the CoolGaN power semiconductors in this package, Infineon is now expanding the application range of GaN as its use creates more demand into very high kilowatt applications.
The EasyPACK series leverages Infineon’s PressFIT contact technology, which ensures highly reliable and durable electrical connections between the module and the PCB. By utilizing a cold-welding process, PressFIT delivers gas-tight, solder-free joints that guarantee long-term mechanical stability and electrical conductivity, even under demanding thermal and mechanical conditions. This advanced design reduces manufacturing time and eliminates potential solder-related defects, offering a robust solution for high-reliability applications. Additionally, with its compact design, EasyPACK modules occupy up to 30 percent less PCB surface area than other conventional discrete layouts, resulting in a very cost-effective solution.
The newest 650 V CoolGaN generation provides increased performance and figures of merit. Infineon’s benchmark data shows that CoolGaN Transistor 650 V G5 products provide up to 50 percent lower energy stored in the output capacitance (E oss), up to 60 percent improved drain-source charge (Q oss) and up to 60 percent lower gate charge (Q g). Combined, these features result in increased efficiencies in both hard- and soft-switching applications.
This leads to a significant reduction in power loss compared to traditional silicon technology, ranging from 20 to 60 percent depending on the specific use case. The CoolGaN Transistor 650 V G5 product family offers a wide range of R DS(on) package combinations. Ten R DS(on) classes are available in various SMD packages, such as ThinPAK 5×6, DFN 8×8, TOLL and TOLT. All products are manufactured on high-performance 8-inch production lines in Villach (Austria) and Kulim (Malaysia). Target applications range from consumer and industrial switched-mode power supply (SMPS) such as USB-C adapters and chargers, lighting, TV, data center, and telecom rectifiers to renewable energy and motor drives in home appliances.
Infineon will showcase the EasyPACK modules with CoolGaN at PCIM 2025 in Nuremberg at the Infineon booth in Hall 7, Booth 470. Further information is available here.
Original – Infineon Technologies
