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Mitsubishi Electric Corporation, Institute of Science Tokyo, University of Tsukuba and Quemix Corporation announced a world-first explanation of how hydrogen creates free electrons in silicon through its interaction with specific crystal defects—an advance that can cut power losses in insulated gate bipolar transistors (IGBTs) and open pathways for future ultra-wide bandgap devices.
Using first-principles calculations alongside electrical, optical and ESR measurements, the team showed that when hydrogen binds near the I4 defect (an interstitial silicon pair), it shifts the defect’s electronic states to favor electron release; the electron associated with hydrogen moves to the defect, which then emits a free electron.
Mitsubishi Electric also reported technical demonstrations on 1,200 V-class devices showing total power-loss reductions of 10% in IGBTs and 20% in diodes versus its 7th-generation products—performance gains linked to the newly clarified hydrogen mechanism and complementary substrate thinning.
Beyond silicon, initial calculations suggest the approach could help control electron levels in ultra-wide bandgap materials such as diamond and AlN, which are notoriously difficult to dope, potentially benefiting power semiconductors, RF devices and quantum sensors.
The collaborators aim to extend this mechanism to next-generation materials to further improve device efficiency and support decarbonization goals.
Original – Mitsubishi Electric
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Mitsubishi Electric Corporation will begin shipping samples on January 21 of four new trench silicon carbide MOSFET bare dies for power electronics equipment, including electric-vehicle traction inverters, onboard chargers, and power supplies for renewable energy such as solar. The new bare dies are designed to help embed advanced SiC devices directly into systems to lower power consumption while maintaining performance.
The devices will be showcased at the 40th Nepcon Japan R&D and Manufacturing show in Tokyo from January 21–23, with additional exhibitions planned in North America, Europe, China, India and other regions.
Growing decarbonization efforts are expanding the market for high-efficiency power electronics. Demand is rising for power semiconductors that enable EV traction inverters and renewable-energy systems to cut losses while preserving performance and quality.
Since 2010, Mitsubishi Electric has shipped SiC power modules that reduce energy use in air conditioners, industrial equipment and railway inverters. To meet the shift toward advanced bare-die integration, the company is introducing four new trench SiC-MOSFET bare dies that leverage a proprietary trench structure to cut power loss by approximately 50% versus planar SiC-MOSFETs. Proprietary manufacturing, including Mitsubishi Electric’s gate oxide film process, suppresses variation in power loss and on-resistance, supporting stable, long-term quality.
Original – Mitsubishi Electric
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Novel Crystal Technology, Inc., working under NEDO’s “Key and Advanced Technology R&D through Cross Community Collaboration Program” for β-Ga2O3 wafers, power devices and modules, announced a new crystal growth method that eliminates precious-metal crucibles. The Drop-fed Growth (DG) process supplies raw-material melt as droplets, sharply reducing the use of iridium compared with the conventional Edge-defined Film-fed Growth (EFG) method and enabling β-Ga2O3 substrate manufacturing costs to fall to approximately one-tenth of current levels.
The company has demonstrated 95-mm-diameter β-Ga2O3 crystals grown without iridium crucibles. Using induction heating to raise the temperature inside the chamber, the crystal surface (seed crystal) is heated and locally melted by radiation through a shaped aperture that stabilizes the temperature profile and supports scale-up to larger diameters. Continuous droplet feeding of the melt onto the crystal surface, combined with downward pulling, enables steady growth without a precious-metal container.
Key benefits of the DG method include:
- Dramatic reduction in iridium usage by eliminating precious-metal crucibles
- Easier scale-up to large diameters via controlled surface heating and melting
- Continuous feed enabling production of long crystal boules
A 95-mm cylindrical crystal with a 50-mm grown section has been produced; n-type doping was introduced, as indicated by the crystal’s dark-blue coloration. Patent protection for the DG method is in place or underway in multiple jurisdictions, including Japan (Patent No. 7633637; application 2025-061932), the United States (US 11,725,299 B2; US 12,163,246 B2), Europe (EP 3 945 147 A1), and China (CN 114000188 A).
Looking ahead, Novel Crystal Technology plans to increase crystal diameter and quality using DG, targeting shipments of 150-mm (6-inch) β-Ga2O3 substrates in 2029 and 200-mm (8-inch) substrates in 2035. The company expects the method’s cost and scalability advantages to accelerate adoption of β-Ga2O3 for low-loss power devices across medium-voltage applications such as home appliances and EVs, and high-voltage systems including rail and grid infrastructure.
Original – Novel Crystal Technology
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Wolfspeed, Inc. announced successful production of a single-crystal 300 mm (12-inch) silicon carbide wafer. Backed by one of the industry’s largest silicon carbide IP portfolios—more than 2,300 issued and pending patents worldwide—the company is pioneering the transition to 300 mm and setting a path toward future volume commercialization.
The advance represents a meaningful step for next-generation computing platforms, immersive AR/VR systems, and high-efficiency power devices. By extending silicon carbide to 300 mm, Wolfspeed is opening new performance thresholds and manufacturing scalability for demanding semiconductor applications.
“Producing a 300 mm single crystal silicon carbide wafer is a significant technology achievement and the result of years of focused innovation in crystal growth, boule and wafer processing,” said Elif Balkas, Chief Technology Officer at Wolfspeed. “It positions Wolfspeed to support the industry’s most transformative technologies, especially critical elements of the AI ecosystem, immersive augmented and virtual reality systems, and other advanced power device applications.”
Wolfspeed’s 300 mm platform is designed to unify high-volume silicon carbide manufacturing for power electronics with advanced capabilities in high-purity semi-insulating substrates used in optical and RF systems. This convergence enables a new class of wafer-scale integration across optical, photonic, thermal, and power domains.
As AI workloads drive data centers toward their power limits, the 300 mm silicon carbide platform will help integrate high-voltage power delivery, advanced thermal solutions, and active interconnects at wafer scale—pushing system performance beyond conventional transistor scaling. In AR/VR, silicon carbide’s material properties—including mechanical strength, thermal conductivity, and optical refractive control—support compact, lightweight architectures that pair high-brightness displays with effective thermal management.
Beyond AI and AR/VR, moving silicon carbide to 300 mm enhances the ability to scale production of advanced power devices for applications such as high-voltage grid transmission and next-generation industrial systems, improving economics and long-term supply assurance.
“This 300 mm breakthrough is more than a technical milestone—it unlocks new opportunities for silicon carbide as a strategic material,” said Poshun Chiu, Principal Analyst, Compound Semiconductor, Yole Group. “It clearly demonstrates that silicon carbide is advancing to the next level of manufacturing maturity required for the coming decade of electrification, digitalization, and AI, and provides the market with a credible roadmap toward higher-volume production, improved economics and long-term supply assurance.”
Original – Wolfspeed
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Micro Commercial Components (MCC) introduced a new automotive-qualified Schottky Barrier Rectifier (SBR) series that adds high-performance options in compact DPAK and D2PAK packages. Engineered for demanding vehicle power architectures, the devices combine low forward voltage, high current capability and stable high-temperature operation to help designers boost efficiency and reliability in automotive power systems.
The series spans 10 A to 60 A with voltage ratings from 45 V to 100 V, enabling broad use across power conversion and protection functions in conventional and electrified platforms. AEC-Q101 qualification, low power loss and a maximum junction temperature of 175 °C support dependable, long-term operation under harsh conditions—reducing thermal stress, improving system efficiency and simplifying design-in for automotive and EV applications.
Features & benefits:
- AEC-Q101 qualified for automotive reliability
- High current capability for demanding power stages
- Low forward voltage to minimize conduction losses
- Maximum junction temperature of 175 °C for high-temperature operation
- Compact DPAK package (approx. 6.5 mm × 6.1 mm)
- High-thermal-performance D2PAK package (approx. 10.4 mm × 9.2 mm)
Original – Micro Commercial Components
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Allegro MicroSystems, Inc. announced a strategic expansion of its Power-Thru™ isolated gate driver family with the AHV85003/AHV85043 chipset. Alongside the flagship AHV85311 integrated solution, the broader portfolio forms a complete ecosystem for high-voltage SiC designs in AI data centers, electric vehicles and clean-energy systems. By eliminating external isolated bias supplies for gate drivers, the solution shrinks footprint and BOM—critical for maximizing power density in demanding 800 V platforms.
Power-Thru isolated gate drivers integrate signal and power across a single isolation barrier, reducing common-mode capacitance by up to 15x to mitigate a major noise source. The approach can deliver up to a 20 dB improvement in EMI performance, boosting efficiency and saving engineering time otherwise spent on noise debugging. To reinforce supply chain resilience, both the new AHV85003/AHV85043 chipset and the AHV85311 integrated device support a multi-source SiC strategy. With selectable Vgs options of 15 V, 18 V and 20 V and an adjustable regulated negative voltage, designers can transition among SiC FET vendors without a board redesign.
The expanded portfolio offers two implementation paths. The AHV85311 integrates the isolation transformer for a plug-and-play route that accelerates time-to-market. The AHV85003/AHV85043 chipset gives teams the flexibility to choose an external transformer to optimize cost, layout and isolation requirements while retaining the same efficiency and noise advantages.
“We are redefining what engineers should expect from a gate driver,” said Vijay Mangtani, Vice President and GM of High Voltage Power Products at Allegro MicroSystems. “With Power-Thru, we solved the fundamental physics problem of noise in high-voltage systems. Now, by offering both a chipset and an integrated solution, we are giving our customers a complete toolkit. Whether they need the plug-and-play speed of an integrated solution or the granular control of a chipset, they get the same game-changing efficiency and the freedom to use the SiC FETs of their choice.”
Original – Allegro MicroSystems
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Micro Commercial Components introduced the MCAC055N20YH, a 200 V N-channel power MOSFET designed for compact, high-efficiency power designs where power density, footprint, and thermal performance are critical. Built on advanced Split-Gate Trench technology and housed in a space-saving DFN5060 package, the device combines fast switching with low conduction losses and robust thermal characteristics for applications spanning data center power, telecom infrastructure, industrial automation, renewable energy systems, and professional audio equipment.
With a 200 V VDS rating, 34 A continuous current capability, and a low RDS(on) of 55 mΩ, the MCAC055N20YH provides ample margin for voltage transients while minimizing heat and energy loss. Its 0.9 °C/W junction-to-case thermal resistance supports stable operation under heavy loads, enabling cooler, longer-lasting systems.
Features & benefits:
- 200 V N-channel power MOSFET for high-voltage industrial and telecom applications
- Split-Gate Trench technology optimized for low on-resistance and high switching speed
- Low RDS(on) of 0.055 Ω (max) at VGS = 10 V to reduce conduction losses and heat generation
- Excellent thermal performance with 0.9 °C/W RθJC for efficient heat transfer and stable high-power operation
- Compact DFN5060 package (5 mm × 6 mm) for high power density in space-constrained designs
- 200 V drain-source rating provides headroom for spikes and ringing in demanding 48–100 V systems
Original – Micro Commercial Components
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Micro Commercial Components (MCC) introduced the MURZ50120P and MURZ75120P, high-voltage super fast recovery rectifiers in a robust TO-247AD package. Engineered for high-frequency power stages where efficiency and EMI performance are critical, these 1200 V diodes feature a maximum reverse recovery time (trr) of 0.22 μs and ultrasoft recovery characteristics to minimize switching losses and significantly reduce electromagnetic interference. Designers can meet tight efficiency and noise targets with less filtering and simpler EMI design.
A low forward voltage drop of 1.85 V cuts conduction losses and improves overall system efficiency. A near-zero temperature coefficient (ZTC) stabilizes forward voltage and switching behavior across wide temperature ranges, easing thermal management and worst-case analysis. High surge current capability—400 A for the MURZ50120P and 500 A for the MURZ75120P—combined with a planar die structure provides strong robustness against inrush and transient events, supporting reliable, repeatable designs.
The MURZ50120P supports an average forward current of 50 A, while the MURZ75120P offers 75 A, giving engineers flexibility to scale power levels or reduce the need for paralleling. Additional attributes include low reverse recovery charge (Qrr) of 2728 nC and 3342 nC for ultrasoft recovery and reduced EMI, plus a rugged TO-247AD through-hole package that delivers excellent thermal performance and mechanical stability while maintaining good creepage and clearance distances for high-voltage layouts.
Target applications include PFC stages, UPS systems, welding equipment and industrial power control—use cases that demand efficiency, ruggedness and high-frequency performance. The combination of 1200 V reverse voltage, high current capability and super fast recovery makes these devices a strong fit for off-line and other industrial high-voltage power systems.
Original – Micro Commercial Components
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DISCO CORPORATION announced two advancements to support wafer thinning and post-thinning quality at scale: the DFG8561, a fully automatic grinder supporting Φ300 mm wafers, and DP26, a new dry polishing wheel series engineered for small-die devices. Both will be exhibited at SEMICON Japan 2025 (December 17–19, Tokyo Big Sight).
Developed to address accelerating migration from 5-/6-inch to 8-inch and 300 mm wafers for automotive and home-appliance MCUs, analog ICs and sensors, the DFG8561 targets higher throughput, tighter thickness control and broader material compatibility. Key enhancements include a low-vibration, low-thermal-expansion rotation axis on the wafer retaining table to improve within-wafer and wafer-to-wafer thickness accuracy; a high-power 6.3 kW spindle for difficult-to-grind materials such as SiC and sapphire; and optimized transfer/cleaning that reduces processing time, delivering 1.6× productivity versus the conventional model. A built-in vacuum unit cuts footprint by 12%, boosting output per unit floor area. Usability upgrades enable recipe configuration per wafer within the same cassette for multi-variety, low-volume production, with main data types visualized as graphs on a 19-inch monitor.
Complementing the grinder, DP26 dry polishing wheels are designed to remove post-DBG damage on small-die wafers in memory and RFID-class applications where further thinning and high mechanical strength are critical. Using an improved pad design and materials, DP26 achieves stable processing of approximately 1 mm × 1 mm small die while maintaining post-process die strength, and delivers a more stable removal amount during polishing compared with the conventional product—contributing to reduced TTV within the wafer.
Together, DFG8561 and DP26 provide an integrated approach from high-accuracy 300 mm grinding to damage-mitigating dry polishing for small-die devices, supporting higher productivity, tighter process control and robust device strength across advanced back-end manufacturing and OSAT environments.
Original – DISCO
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Micro Commercial Components introduced the MCTL011N20YH, a 200 V N-channel MOSFET designed for high-power systems where efficiency, thermal performance and board space are critical. Built on Split Gate Trench MOSFET Technology and housed in a thermally efficient TOLL-8L package, the device delivers low conduction and switching losses with low parasitic inductance—supporting fast, clean transitions and stable operation up to Tj(max) = 175 °C.
The optimized thermal path of the TOLL-8L package improves heat dissipation, enabling higher current handling with reduced temperature rise and lighter cooling requirements. This helps engineers increase power density, meet tight efficiency targets and enhance long-term reliability in motor drivers, DC-DC converters, UPS systems and server power modules.
Features and benefits:
- 200 V N-channel power MOSFET
- Split Gate Trench MOSFET Technology for low losses and high efficiency
- TOLL-8L surface-mount power package with compact footprint
- Low parasitic inductance for fast, clean switching
- Excellent thermal performance and heat dissipation
- High current handling capability
- Maximum junction temperature: Tj(max) = 175 °C
- Mechanically robust package suited for harsh and industrial environments
Original – Micro Commercial Components
