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Infineon Technologies AG announced that Chicony Power has selected its CoolGaN Transistors G5 to power multiple laptop adapters developed for a leading notebook manufacturer.
The design highlights how gallium nitride power semiconductors are enabling more compact and energy-efficient charging solutions. By using GaN technology, the new adapters can achieve smaller form factors while improving efficiency and sustainability for mainstream computing devices.
At the core of the adapter design are Infineon’s CoolGaN Transistors G5, optimized for fast switching and low conduction losses across a wide range of operating conditions. The devices are based on Infineon’s hybrid-drain gate injection transistor architecture, designed to deliver robust high-voltage gate operation, improved dynamic on-resistance performance, and higher saturation current to support reliable operation.
Compared with the previous generation, the G5 transistors deliver up to 30% improved performance in key figures of merit such as RDS(on) multiplied by gate charge. These improvements support higher efficiency and greater power density in compact adapter designs.
The adapter platform developed by Chicony Power incorporates high-frequency power architectures with optimized power factor correction and DC/DC conversion stages that leverage the fast switching capability of GaN devices. The design also includes EMI-optimized layouts and filtering to reduce electrical noise while maintaining strong compliance margins. Thermal optimization allows sustained power delivery in the 100 W to 300 W range while maintaining compact mechanical designs.
Infineon stated that it continues to expand its GaN portfolio, announcing more than 40 GaN products over the past year. The company is also progressing with scalable GaN manufacturing on 300-millimeter wafers, with initial samples already shipped to customers. According to Infineon, 300 mm GaN production will enable higher manufacturing capacity and faster delivery of GaN products as demand for high-efficiency power electronics grows.
Original – Infineon Technologies
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Navitas Semiconductor will present its latest GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power technologies at APEC 2026, booth #2027, in San Antonio, Texas, from March 22–26.
The company will highlight solutions targeting AI data centers, performance computing, grid and energy infrastructure, and industrial electrification.
Navitas will unveil a 10 kW ‘GaN-powered’ 800 V–to–50 V DC-DC platform, designed for next-generation AI data centers.
Key features include:
- Advanced 650 V and 100 V GaNFast FETs
- Three-level half-bridge architecture with synchronous rectification
- 98.5% peak efficiency
- 2.1 kW/in³ power density
- Support for both 800 V and ±400 VDC AI data center architectures
In addition, Navitas will showcase:
- A 12 kW AI data center power supply using IntelliWeave™ digital control
- An 8.5 kW OCP power supply
- A 4.5 kW CRPS power supply
For next-generation solid-state transformer (SST) applications, Navitas will present its SiCPAK™ power module portfolio, designed for high-efficiency (>98%) conversion from medium-voltage grids (13.8 kVAC to 34.5 kVAC) to 800 VDC or 1500 VDC.
The lineup includes:
- 3300 V ultra-high-voltage (UHV) SiC modules
- 2300 V UHV SiC modules
- 1200 V high-voltage solutions
A new gate driver evaluation board for dynamic characterization of UHV SiCPAK™ modules will also be demonstrated.
Navitas will debut ultra-compact:
- 240 W and 300 W GaN-based power solutions for AI-enabled high-performance computing
- 400 W to 1 kW GaN motor control systems for industrial applications
These designs emphasize superior efficiency, compact size, and high power density enabled by the latest GaNFast IC technology.
Navitas executives and engineers will participate in multiple technical sessions:
- March 24 | 8:55–9:20 AM CT | IS01.2
Maximizing MVHV SiC Performance and Reliability
Presenter: Sumit Jadav - March 25 | 11:05–11:30 AM CT | IS07.6
High-Power GaN ICs in 800V AI DC-DC Brick Solutions
Presenter: Llew Vaughan-Edmunds, VP & GM, GaN Business Unit - March 26 | 11:35–11:50 AM CT | IS27.4
Single-stage Power Converter Enabled by GaN Bidirectional Switches
Presenter: Llew Vaughan-Edmunds
With innovations spanning GaN and ultra-high-voltage SiC, Navitas continues to target high-power markets where efficiency, density, and reliability are critical—particularly as AI infrastructure and electrification accelerate globally.
Original – Navitas Semiconductor
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Infineon Technologies AG has expanded its CoolGaN™ portfolio with the new CoolGaN Drive HB 600 V G5 product family. The four new devices – IGI60L1111B1M, IGI60L1414B1M, IGI60L2727B1M and IGI60L5050B1M – integrate two 600 V GaN switches in a half-bridge configuration along with high- and low-side gate drivers and a bootstrap diode in a single package.
By combining key power stage functions into one thermally optimized solution, the new family reduces external component count, simplifies PCB layout challenges typically associated with fast-switching GaN devices and helps shorten development cycles. Infineon said the integrated approach allows designers to realize GaN’s core advantages, including higher switching frequencies, lower switching and conduction losses and greater power density.
Johannes Schoiswohl, Head of the GaN Business Line at Infineon, said the new solutions combine high-speed GaN performance with enhanced integration and robustness, helping designers shrink systems and improve efficiency in compact power electronics.
The CoolGaN Drive HB 600 V G5 devices target low-power motor drives and switched-mode power supplies. The integrated half-bridge architecture enables smaller magnetics and passive components, improved efficiency across operating conditions and enhanced dynamic performance in space-constrained designs.
The devices are engineered for high-speed precision, offering a 98 ns propagation delay with minimal mismatch to support efficient high-frequency operation and predictable timing. For simplified integration, the products feature PWM inputs compatible with standard logic levels and operate from a single 12 V gate driver supply. Fast under-voltage lockout (UVLO) recovery supports reliable start-up and transient performance.
For thermal optimization, the devices are housed in a 6 mm × 8 mm TFLGA-27 package with exposed pads, enabling efficient heat spreading and supporting heatsink-less designs in many applications.
Infineon said the new CoolGaN Drive HB 600 V G5 family strengthens its position in the GaN market by combining proven CoolGaN device technology with system-level integration and deep power conversion expertise, enabling customers to more easily adopt and scale high-efficiency GaN-based designs across industrial and consumer platforms.
Original – Infineon Technologies
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Efficient Power Conversion (EPC) will present its latest Generation 7 (Gen 7) GaN technology and integrated GaN ICs at the Applied Power Electronics Conference (APEC) 2026. At booth #1935, EPC will demonstrate production-ready power architectures targeting AI infrastructure and next-generation robotic systems, alongside a series of live technical presentations led by its engineering team.
EPC said the rapid expansion of AI computing is reshaping power delivery architectures, introducing 800 V distribution and megawatt-class racks that require higher efficiency, density and reliability throughout the power conversion chain. At the same time, humanoid robotics demand compact, lightweight and highly efficient electronics embedded directly within joints and actuators. The company will show how GaN technology enables point-of-load conversion in data centers and compact motor drives in robotics.
EPC will showcase multiple development platforms already deployed in customer programs across robotics, drones and high-performance computing. These include:
- EPC9176 and EPC91104 motor drive boards
- EPC9186 multi-device inverter
- Humanoid joint platforms EPC91118 and EPC91120
- DC-DC conversion solutions including EPC91200, EPC9196 and EPC9193 series
The company emphasized that while reference designs support development, its focus remains on scalable, production-ready devices built on the Gen 7 platform.
CEO Alex Lidow said the new Generation 7 transistors outperform MOSFETs across the 40 V to 15 V range and that EPC’s latest GaN ICs enable more compact, higher-performance motor drives for humanoid robots and drones.
At APEC 2026, EPC will host live booth presentations and technical sessions covering system architectures, reliability methodologies and application implementations. Highlights include:
- Tuesday, March 24 (10:30–11:10 am):
Alex Lidow – GaN Beats MOSFETs at All Voltages
Shengke Zhang – Leveraging Test-to-Fail Methodology to Ensure Reliable Field Operation of GaN Devices - Tuesday, March 24 (2:30–3:10 pm):
Marco Palma – GaN Inverters Reference Designs for Humanoid Robot Motor Joints
Michael de Rooij – 800 V to 12 V AI Servers Using Low-Voltage GaN in an ISOP Converter
Additional conference presentations will address topics including end-to-end GaN system design, reliability assessment under dynamic switching conditions, integrated magnetics for server power supplies, robotic micro-modules and mission-profile-driven reliability for AI data centers.
EPC representatives, including CEO Dr. Alex Lidow, will be available at booth #1935 to discuss GaN solutions for AI infrastructure, robotics and high-density power systems.
Original – Efficient Power Conversion
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ROHM Co., Ltd. has announced plans to integrate its proprietary GaN power device development and manufacturing technologies with process technology from TSMC, establishing an end-to-end GaN production system within the ROHM Group.
Under a newly signed license agreement, TSMC’s GaN process technology will be transferred to ROHM’s Hamamatsu facility, enabling the company to strengthen its supply capabilities in response to rapidly growing demand for GaN in applications such as AI servers and electric vehicles (EVs).
Gallium nitride (GaN) power devices offer superior high-voltage and high-frequency performance, enabling higher efficiency and reduced system size. While already widely adopted in consumer applications such as AC adapters, GaN is increasingly being used in high-voltage systems including:
- Power units for AI servers
- On-board chargers (OBCs) for EVs
Demand in these segments is expected to accelerate further as electrification and AI infrastructure continue to expand.
ROHM has been active in GaN development for years. The company established mass production of 150V GaN devices at ROHM Hamamatsu in March 2022. In the mid-power range, ROHM strengthened its supply structure through external collaborations — with TSMC as a key partner.
Key milestones in the collaboration include:
- Adoption of a 650V GaN process from TSMC beginning in 2023
- A December 2024 partnership agreement focused on automotive GaN
The newly announced technology integration represents a deeper evolution of this collaboration.
ROHM aims to complete the technology transfer and establish the new production system in 2027, positioning the company to meet expanding demand in AI server and automotive applications.
Upon completion of the transfer, ROHM and TSMC will amicably conclude their automotive GaN partnership. However, both companies stated they will continue working together to advance higher-efficiency and more compact power supply systems.
By bringing GaN production capabilities fully in-house while leveraging TSMC’s advanced process technology, ROHM is strengthening its long-term competitiveness in next-generation power semiconductors.
Original – ROHM
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STMicroelectronics has introduced MasterGaN6, marking the start of the second generation of its MasterGaN half-bridge family. The new power system-in-package combines an updated BCD driver with a high-performance GaN power transistor featuring 140 mΩ RDS(on), targeting compact, high-efficiency power conversion designs.
Building on the integration approach of the MasterGaN family, MasterGaN6 adds dedicated pins for fault indication and standby functionality to support smarter system management and improved power savings. The devices also integrate LDOs and a bootstrap diode, helping reduce external components while maintaining optimal gate-drive conditions.
ST said the updated driver is engineered for fast timing, enabling high-frequency operation through low minimum on-time and short propagation delays, which can help designers reduce circuit footprint. An ultra-fast wake-up time is also intended to improve burst-mode operation and support higher efficiency at light loads.
MasterGaN6 integrates protections including cross-conduction prevention, thermal shutdown and under-voltage lockout, supporting simplified layouts, smaller PCB designs and a lower bill of materials. The device is rated to handle up to 10 A and is aimed at consumer and industrial applications such as chargers, adapters, lighting power supplies and DC-to-AC solar micro-inverters. Its half-bridge configuration is positioned for multiple topologies, including active-clamp flyback (ACF), resonant LLC, inverse buck converters and power factor correction (PFC) circuits.
To support evaluation and design-in, ST has released the EVLMG6 evaluation board and added a MasterGaN6 model to the eDesignSuite PCB Thermal Simulator.
Original – STMicroelectronics
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The power electronics market is shifting rapidly as Gallium Nitride (GaN) gains wider adoption, and Infineon Technologies has released the 2026 edition of its annual GaN Insights report, outlining the state of GaN technology, emerging applications and the company’s latest product direction.
“GaN has become a market reality that has gained traction across various industries,” said Johannes Schoiswohl, Head of GaN Systems Business Line at Infineon. He added that Infineon’s product-to-system approach, manufacturing expertise and broad portfolio are intended to help customers navigate GaN adoption and capture its full potential.
Infineon points to strong market expansion expectations through 2030, driven by higher production volumes and broader penetration into new end markets. The company also expects 2026 to bring a wider set of design opportunities, including expanded use of GaN bidirectional switches (BDS) beyond solar inverters and EV on-board chargers. Infineon highlighted its high-voltage bidirectional GaN switch architecture based on a common-drain design with a double-gate structure using Gate Injection Transistor (GIT) technology, aimed at reducing die size versus conventional back-to-back approaches. In example system comparisons, Infineon notes that CoolGaN™ BDS operation up to 1 MHz can enable higher power output and lower system costs in solar microinverters.
The report also emphasizes GaN’s expansion into AI data centers, robotics, electric vehicles, renewable energy, and newer areas such as digital health and quantum computing. In data center power, Infineon describes GaN-enabled topologies as a path to higher efficiency and power density, supporting more compact architectures and lower losses. In robotics, the company highlights the potential for smaller motor drives with improved fine motion control.
Infineon positions its Integrated Device Manufacturing (IDM) strategy and 300-mm GaN manufacturing as key differentiators, alongside a portfolio spanning 40 V to 700 V across discrete and integrated solutions. The company cites recent platform examples including CoolGaN™ Transistor 650 V G5 devices, CoolGaN™ Transistor MV G5 parts with a monolithically integrated Schottky diode, and CoolGaN™ Automotive 100 V products aligned with AEC-Q101 requirements for the shift from 12 V to 48 V vehicle architectures.
Original – Infineon Technologies
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Efficient Power Conversion (EPC) announced a broad licensing agreement with Renesas Electronics Corporation aimed at accelerating adoption of GaN in high-efficiency power systems.
Under the agreement, Renesas will gain access to EPC’s low-voltage eGaN technology and EPC’s established supply-chain ecosystem. The companies plan to collaborate over the next year to stand up internal wafer fabrication capability for these products. Renesas will also second-source several EPC GaN devices that are already in mass production, a move intended to improve supply-chain resilience and long-term availability for customers.
The partnership is framed around the rising demand for higher efficiency, higher power density, and lower carbon footprints in power conversion, where silicon is increasingly constrained by physical limits. GaN transistors, by contrast, enable faster switching, higher efficiency, and smaller form factors—benefits that are driving architecture shifts from consumer applications to AI data center power.
“Together, EPC and Renesas are forming a global alliance to deliver state-of-the-art power efficiency – cutting costs in AI data centers and enhancing autonomous systems,” said Alex Lidow, CEO of EPC.
Renesas recently expanded its GaN position through the acquisition of Transphorm, strengthening its high-voltage GaN portfolio for applications such as AC-DC power supplies, EV chargers, solar inverters, and industrial motor drives. By adding EPC’s low-voltage eGaN expertise, Renesas aims to broaden its portfolio across low- to high-voltage segments, supporting high-volume opportunities such as AI power architectures from 48 V down to 12 V and 1 V, as well as client computing and battery-powered designs.
“Expanding our business into low-voltage GaN allows us to serve the fastest-growing power segments,” said Rohan Samsi, VP, GaN Business Division at Renesas. “This agreement with EPC complements our established high-voltage 650 V+ portfolio and enables us to capitalize on high-volume markets such as AI power architectures from 48 V down to 12 V and 1 V, as well as client computing and battery-operated applications.”
Original – Efficient Power Conversion
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Navitas Semiconductor introduced a 10 kW DC-DC reference platform designed to accelerate the shift toward high-voltage DC (HVDC) power architectures in AI data centers. The company said the platform reaches up to 98.5% peak efficiency at 1 MHz switching frequency, enabling higher power density for large-scale data center expansion.
The all-GaN design uses advanced 650 V and 100 V GaNFast FETs in a three-level half-bridge topology with synchronous rectification. In a full-brick form factor (61 × 116 × 11 mm), Navitas reports 98.5% peak efficiency and 98.1% full-load efficiency, delivering 2.1 kW/in³ power density.
Navitas positions the platform as production-oriented and compatible with both 800 V–to–50 V and ±400 V–to–50 V architectures at 10 kW. It integrates auxiliary power and control functions to simplify adoption and support compact, high-power-density module designs for next-generation HVDC AI data centers.
“The design platform enables the transition to HVDC data center power infrastructure, supporting the future power requirements of AI workloads that will demand between 100- and even 1,000-times more compute per query,” said Chris Allexandre, President and CEO of Navitas Semiconductor. “Navitas continues to redefine what’s possible in AI data center power, with the 10 kW DC-DC solution giving breakthrough efficiency, power density, and scalability to allow faster and cooler operation while making them more sustainable.”
The 10 kW DC-DC platform is currently being evaluated with key data center customers through collaborative development and is scheduled to debut publicly at APEC in San Antonio, Texas, March 22–26, at the Navitas booth (#2027).
Original – Navitas Semiconductor
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Efficient Power Conversion (EPC) has begun volume production of the EPC2366, the first transistor in its seventh-generation eGaN® platform. Engineered to set a new performance bar, the device delivers up to 3× improvement over equivalent silicon MOSFETs, combining a typical RDS(on) of 0.84 mΩ with an optimized RDS(on) × QG figure of merit of 12.6 mΩ·nC to simultaneously cut conduction and switching losses and improve thermal behavior.
Targeted at high-efficiency, high-density systems, EPC2366 is suited for synchronous rectification, high-density DC-DC conversion, AI server power supplies, and advanced motor drives. It supports 40 V drain-to-source operation and 48 V transients, with continuous drain current up to 88 A and pulsed current to 360 A. Thermal performance is aided by a compact 3.3 × 2.6 mm PQFN package featuring a junction-to-case thermal resistance of 0.6 °C/W.
“We have developed a seventh-generation GaN platform that creates a new state-of-the-art in power transistor performance. The 40 V, EPC2366 is the first of this family to enter mass production. However, EPC is sampling seventh-generation 25 V and 15 V transistors now and expects more mass production transitions in the first half of 2026,” said Alex Lidow, CEO and co-founder of EPC.
To speed evaluation, EPC offers the EPC90167 half-bridge board integrating two EPC2366 devices in a low-parasitic layout. It supports standard PWM drive signals and flexible input modes, providing a practical reference platform for real-world assessments in fast, high-current power stages.
Original – Efficient Power Conversion
