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Renesas Electronics has introduced the TP65H020G4PLSGBD, a 650V depletion-mode GaN power device with dual-side cooling for high-density power conversion in 800V high-voltage DC AI data center architectures. The device is currently sampling to major AI data center OEMs and ODMs.
Based on Renesas’ Gen IV Plus GaN technology, the device provides 20mΩ on-resistance and supports operation up to 700V. It targets 800V DC/DC intermediate bus converters that step down to 48V, 12V or 6V, as well as battery backup and capacitor bank stages in sidecar power racks.
The TP65H020G4PLSGBD uses an 8 × 8mm dual-side-cooled PQFN package that dissipates heat through both the top and bottom surfaces. Renesas said the design reduces top-side thermal impedance by 10%, while its footprint is 57% smaller than the company’s existing 10 × 15mm TOLT package.
The Gen IV Plus architecture combines low gate charge and output capacitance with an integrated freewheeling diode designed for minimal reverse recovery. The device also has a high threshold voltage and can operate without negative gate bias, allowing it to be driven using a standard silicon gate driver rather than a dedicated enhancement-mode GaN driver.
Renesas designed the device for switching frequencies extending into the MHz range, enabling reductions in the size of passive components. The dual-side-cooled PQFN package was developed in collaboration with AI infrastructure customers with the aim of establishing a common footprint for high-density power designs.
The company has also developed a 6kW 800V-to-48V LLC DC transformer reference design using the new GaN device and a Renesas RA6T3 microcontroller. The design achieves a power density of 2.6kW/in³, while full-load testing showed efficiency 0.21 percentage points higher than an equivalent design based on Renesas’ TOLT package.
Renesas is also using the 8 × 8mm platform in 800V-to-12V and 800V-to-6V intermediate bus converter reference designs. The company plans to showcase the TP65H020G4PLSGBD and its 800V power solutions at the OCP Global Summit, scheduled for October 12–15 in San Jose, California.
Original – Renesas Electronics
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Eggtronic has introduced a 140W USB-C Power Delivery AC/DC reference platform for premium laptops and other high-performance USB-C devices, combining its EPIC combo controller with a high-voltage GaN transistor from Renesas.
The reference design uses Renesas’ TP70H150G4LSG, a 700V GaN transistor with an RDS(on) of 150mΩ. Eggtronic said the platform achieves conversion efficiency approaching 96%, while targeting a bill of materials cost comparable to a conventional quasi-resonant (QR) flyback converter.
At a 90VAC input, the platform achieves 94.5% efficiency. It is also designed to maintain high efficiency under light-load conditions and support compliance with DOE Level VII energy-efficiency requirements.
Eggtronic’s EPIC combo controller integrates several power conversion and control functions into a single device, including totem-pole power factor correction, isolated primary-side regulation, synchronous rectification, isolated communication and USB Power Delivery protocol management.
The AC/DC architecture combines a totem-pole PFC stage with Eggtronic’s proprietary QuarEgg regenerative flyback topology. The company said the PFC implementation is designed to address electromagnetic interference and light-load efficiency limitations associated with conventional totem-pole designs.
The QuarEgg stage uses a single primary-side switch and is designed to provide an alternative to LLC, asymmetrical half-bridge and active-clamp flyback architectures. Eggtronic is targeting higher conversion efficiency while retaining the component count and cost characteristics associated with QR flyback designs.
The 140W USB-C Power Delivery reference board is available now and is intended to accelerate development of notebook power adapters and other high-power USB-C devices.
Original – Eggtronic
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Navitas Semiconductor will begin shipments of its first U.S.-manufactured fifth-generation GaNFast devices in September 2026 through its manufacturing partnership with GlobalFoundries (GF). The devices are being produced on GF’s 200mm GaN-on-silicon manufacturing platform in Burlington, Vermont.
The production milestone follows a long-term strategic partnership announced by Navitas and GF in November 2025 to establish U.S.-based GaN manufacturing. Navitas adapted its Gen 5 GaNFast FET and power IC technology for production at GF’s Vermont facility.
The initial Gen 5 product family is expected to include 650V GaN FETs with RDS(on) ratings of 11mΩ, 18mΩ, 50mΩ, 120mΩ and 150mΩ. The first wafers are scheduled to ship in September, followed by internal samples in October and samples for strategic customers before the end of 2026.
Navitas developed its proprietary process design kits and device architectures for GF’s 200mm GaN-on-Si manufacturing process. The company’s GaNFast portfolio includes FETs and power ICs integrating functions such as power switching, drive, control, sensing and protection.
The companies are targeting the U.S.-manufactured devices at AI infrastructure, high-performance computing, industrial electrification and national security applications where high-efficiency power conversion and domestic semiconductor supply are required.
Navitas said it has more than 300 issued and pending patents across its GaN and SiC technologies. The company plans to use the GlobalFoundries manufacturing partnership for its Gen 5 GaNFast products as well as future generations of GaN devices.
The September wafer shipments represent the first production-stage output from the partnership, with the companies progressing from technology transfer and process optimization toward customer sampling and subsequent volume production.
Original – Navitas Semiconductor
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Infineon Technologies and Skeleton Technologies have signed a Memorandum of Understanding to collaborate on high-efficiency and resilient power solutions for AI data centers, with a focus on solid-state transformers, high-power sidecars and energy storage.
Under the agreement, the companies will jointly explore advanced architectures covering the AI data center power chain from grid to processor core. The collaboration will combine Infineon’s power semiconductor technologies with Skeleton’s supercapacitor and power conversion capabilities.
One area of development will be next-generation solid-state transformers for converting medium-voltage AC power into high-voltage DC. The companies plan to combine Infineon’s high-voltage CoolSiC silicon carbide power semiconductors with Skeleton’s power conversion systems and supercapacitor technology.
Infineon and Skeleton are also collaborating on GaN-based peak-shaving systems. These solutions will combine Skeleton’s supercapacitors with Infineon’s CoolGaN power semiconductors to manage rapid changes in data center power demand.
The collaboration is intended to address increasing power density in AI data centers, where growing numbers of high-performance GPUs are placing greater demands on power conversion, distribution and storage systems. Solid-state transformers and high-power sidecars are being developed to support more efficient power delivery while increasing system resilience.
Infineon will contribute its expertise in high-efficiency power conversion and control, while Skeleton will provide technologies for storing and rapidly delivering high levels of power. The companies will focus on increasing power density without expanding the physical footprint occupied by data center power infrastructure.
The companies said the joint development work will target improvements in energy efficiency, power density and system reliability while reducing total cost of ownership for data center operators.
Original – Infineon Technologies
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Nexperia and Aurobay Technologies, a division of Horse Powertrain, are exploring a strategic collaboration focused on advanced GaN and SiC power semiconductor solutions for automotive applications.
The companies plan to combine Nexperia’s wide-bandgap semiconductor technologies with Aurobay Technologies’ powertrain system design and integration capabilities. The evaluation will focus on how closer cooperation between semiconductor development and system integration could support future electrified and hybrid vehicle platforms.
The initiative builds on an existing collaboration in which Nexperia’s GaN devices were deployed in Aurobay Technologies’ highly integrated power generation system for range-extender applications. According to the companies, the project demonstrated improvements in efficiency, system size and weight while operating in demanding automotive environments.
Nexperia and Aurobay Technologies will now assess opportunities to optimize power electronics architectures for applications including traction inverters and power generation systems. The work is expected to include early-stage co-design and system-level optimization of power semiconductor technologies and powertrain electronics.
The collaboration will evaluate both GaN and SiC technologies as the companies seek higher efficiency, increased power density and more compact powertrain architectures. The work will also examine how semiconductor characteristics can be optimized around specific vehicle-level and powertrain requirements.
Nexperia’s Head of Business Group Wide-Bandgap, IGBTs and Modules, Edoardo Merli, said closer cooperation with Aurobay Technologies will allow the company to better understand system-level requirements and evaluate the vehicle-level benefits of GaN and SiC technologies.
Aurobay Technologies said its previous integration of Nexperia’s GaN devices demonstrated the potential of closer cooperation between semiconductor suppliers and powertrain developers. The companies will use the expanded collaboration to evaluate further improvements in efficiency, performance and packaging for future electrified propulsion systems.
Original – Nexperia
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Infineon Technologies’ radiation-hardened HiRel power devices are aboard NASA’s Nancy Grace Roman Space Telescope following its launch from Kennedy Space Center in Florida.
The observatory will travel to the second Sun-Earth Lagrange point (L2), more than 1.5 million kilometers from Earth. The location, also used by the James Webb Space Telescope, provides stable gravitational conditions and an unobstructed view of a large portion of the sky.
Infineon’s HiRel portfolio integrated into the Roman Space Telescope includes radiation-hardened power semiconductor components designed for sustained operation in the space radiation environment. The devices are qualified to MIL-PRF standards and characterized for Total Ionizing Dose (TID) and Single Event Effects (SEE).
Beyond Earth’s protective magnetic field, electronic systems are exposed to high-energy particles that can damage semiconductor components. Infineon’s rad-hard devices use semiconductor architectures designed to withstand these radiation effects rather than relying solely on external shielding.
Reliable power delivery will be required throughout the mission, which is expected to operate at L2 for up to a decade without maintenance or servicing. The telescope is expected to transmit approximately 1.4TB of raw scientific data per day to ground stations in New Mexico, Australia and Japan, which Infineon said will represent the highest data volume of any NASA astrophysics mission to date.
Infineon’s broader HiRel portfolio includes radiation-hardened silicon power MOSFETs, GaN transistors, gate drivers, solid-state relays and diodes, supported by in-house manufacturing and radiation testing capabilities.
The portfolio also includes Infineon’s JANS-qualified 100V radiation-hardened GaN transistor, qualified to MIL-PRF-19500. The device is designed to provide lower switching losses, higher switching frequencies and greater power density, allowing reductions in power losses and the size and weight of associated magnetic components.
Infineon said its space-qualified components have supported hundreds of missions since the 1970s, including navigation satellites, the International Space Station and NASA’s Artemis program.
Original – Infineon Technologies
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Efficient Power Conversion (EPC) has started mass production of its 100V integrated GaN power-stage IC family, comprising the EPC23108, EPC23109, EPC23110 and EPC23111. The devices target high-performance motion control and power conversion applications including humanoid robots, drones and industrial motor drives.
The monolithic ePower Stage ICs integrate high-side and low-side eGaN FETs, gate drivers and level-shifting circuitry in compact, thermally enhanced QFN packages. The family supports operation up to 100V, with current ratings of 35A and 20A depending on the device.
The integrated power stages incorporate fast fault shutdown, safe gate control during power-loss conditions and support for continuous operation at 100% duty cycle. EPC also offers single-input PWM variants intended to simplify control in multi-axis motor drive systems.
Alongside the production launch, EPC is offering the EPC91128, EPC91129, EPC91130 and EPC91131 three-phase BLDC motor drive evaluation boards. The boards are based on the four new ePower Stage ICs and integrate gate drivers, current and voltage sensing, housekeeping power supplies, temperature monitoring and protection functions.
Applications for the new devices include humanoid robotics, drones, industrial motor drives, medical equipment, synchronous rectification and high-density DC-DC converters. EPC said production volumes are currently ramping through its global distribution network.
EPC is also releasing a technical white paper covering the architecture, design considerations and evaluation platforms for the EPC23108/09/10/11 family, with versions available in English and Chinese. The document provides implementation guidance for robotics, drones and high-performance motor-drive systems.
Original – Efficient Power Conversion
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GaN / LATEST NEWS / PRODUCT & TECHNOLOGY / WBGEPC Space Launches Radiation-Hardened GaN Transistors for AI and High-Performance Computing in Space
August 18, 2026
2 Min ReadEPC Space has introduced three radiation-hardened eGaN power transistors targeting the growing power requirements of next-generation space computing platforms, including AI processors, GPUs and high-performance system-on-chip architectures.
The new EPC7050PCSH, EPC7066PCSH and EPC7065PCSH combine high current capability with very low on-resistance in compact plastic PQFN surface-mount packages featuring backside thermal pads. All three devices are rated for 101 A continuous current, while covering voltage classes of 15 V, 25 V and 40 V.
The 15 V EPC7050PCSH provides typical RDS(on) of 0.28 mΩ, while the 25 V EPC7066PCSH offers 0.37 mΩ. The 40 V EPC7065PCSH has typical RDS(on) of 0.5 mΩ. The devices also feature zero reverse-recovery charge, supporting lower switching losses and higher-frequency operation compared with conventional silicon power devices.
Radiation performance is a central feature of the new family. EPC Space specifies total ionizing dose immunity above 1 Mrad, single-event-effect tolerance to LET(Si) of 85 MeV·cm²/mg and neutron tolerance exceeding 4 × 10¹⁵ n/cm². This combination is intended to provide the radiation robustness required for demanding orbital computing and power-conversion systems.
The devices are optimized for synchronous rectification on the secondary side of intermediate bus converters producing 5 V to 12 V outputs. EPC Space highlights their low RDS(on) × QG figure of merit as an enabler for higher switching frequencies, increased conversion efficiency and greater power density.
The transistors also target voltage regulator modules, intermediate voltage regulators and point-of-load buck converters supplying processor core voltages around 0.8 V. EPC Space specifically identifies space computing platforms based on devices such as Versal SoCs and NVIDIA GPUs as potential applications.
Original – EPC Space
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Navitas Semiconductor has filed a patent infringement lawsuit against Renesas Electronics in the U.S. District Court for the Eastern District of Texas, escalating intellectual-property competition within the rapidly growing GaN power semiconductor market.
The lawsuit alleges that major Renesas GaN product lines, including its SuperGaN power semiconductors, infringe four Navitas U.S. patents: Nos. 9,929,079; 11,545,838; 11,770,010; and 11,862,996. Navitas said the patents form part of its broader GaN intellectual-property portfolio developed through its internal research and engineering activities.
Navitas has built a global IP portfolio of more than 300 issued and pending patents spanning its wide-bandgap semiconductor technologies. The company argues that protecting this intellectual property is increasingly important as GaN adoption expands beyond consumer power adapters into higher-power applications.
The legal action comes as Navitas shifts its growth strategy toward AI infrastructure, including AI data-center power systems and the energy and grid infrastructure supporting them. The company said momentum in these higher-power markets contributed to its second-quarter 2026 performance and that it expects revenue growth to accelerate in the third quarter as it executes its Navitas 2.0 strategy.
Original – Navitas Semiconductor
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Power Integrations has announced a major extension of its PowiGaN gallium nitride technology to a 2200 V rating, which the company says exceeds the voltage capability of other commercially available GaN technologies. The development significantly expands the addressable voltage range for GaN and targets emerging high-voltage applications including AI data centers, electric vehicles, renewable energy, battery storage and HVDC infrastructure.
The 2200 V technology is particularly relevant as power architectures migrate toward higher DC bus voltages to improve efficiency and power density. Power Integrations highlighted next-generation AI data centers as a major opportunity, with industry roadmaps moving beyond today’s 800 VDC architectures toward potential 1500 V distribution systems. The additional voltage headroom provided by 2200 V GaN could enable designers to use GaN in applications where voltage requirements have historically favored silicon carbide.
Power Integrations is already extending GaN into these higher-voltage systems. Its 1700 V PowiGaN ICs are being designed into single-stage auxiliary power applications in data centers, while 1250 V devices provide an alternative to stacked lower-voltage switches in the main power path of 800 VDC architectures. The new 2200 V platform pushes this strategy further by providing sufficient voltage margin for future higher-voltage buses.
The development is strategically important for the competitive positioning of GaN versus SiC. GaN has traditionally delivered advantages in switching frequency and power density but has been constrained by lower commercially available voltage ratings. High-voltage applications have therefore remained an important stronghold for SiC. By extending GaN to 2200 V, Power Integrations is attempting to bring GaN’s high-frequency characteristics into applications previously considered beyond its practical voltage range.
The potential system-level impact could be significant. Higher-voltage GaN devices could reduce the need to series-connect multiple lower-voltage switches, simplifying power stages while reducing component count and potentially improving power density and reliability. Power Integrations specifically identifies solar inverters, HVDC systems, advanced industrial power conversion, EV systems and data center infrastructure as potential applications.
The announcement also highlights how AI infrastructure is accelerating technology competition between GaN and SiC. Yole Group analyst Roy Dagher noted that GaN’s historical voltage ceiling has limited its participation in the main power path of high-voltage data center architectures, leaving much of this opportunity to SiC. According to the figures cited in the announcement, Yole expects the power GaN device market to reach $3.5 billion by 2031.
Original – Power Integrations
