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GaN / LATEST NEWS / SiC / WBG3 Min Read
Navitas Semiconductor will host an “AI Tech Night” event in Taipei, Taiwan, bringing together industry experts, supply chain partners, and technology developers for keynote speeches, demonstrations, and interactive discussions. The event will focus on how high-power GaNSafe™ and GeneSiC™ technologies are transforming AI data center infrastructure by overcoming efficiency and power density challenges to meet the growing power demands of AI and hyperscale data centers. Navitas will debut its next-generation OCP data center power supply unit (PSU) reference design, which has been ‘designed for production’ and achieves the world’s highest power density, performance, and efficiency.
With each GPU power exceeding 1,000W and AI cluster computing demand doubling every three months, traditional power supply technologies are struggling to keep pace with the evolving needs for energy efficiency and power density in AI infrastructure. Navitas’ GaN and SiC solutions will showcase the breakthrough of conventional architectural limitations and enable more efficient, high-density, and sustainable data center development.
Navitas ‘AI Power Roadmap’ was created in 2023, focusing on next-generation AI data center power delivery. The initial PSU was a high-speed, high-efficiency 2.7 kW CRPS (common redundant power supply), which offered 2x higher power density and a 30% reduction in energy loss. A 3.2kW CRPS followed, achieving a 40% smaller size than best-in-class, legacy silicon solutions for power-hungry AI and Edge computing. Next was the world’s highest-power-density 4.5kW CRPS, achieving 137W/in3 and an efficiency of over 97%. In November 2024, Navitas released the world’s first 8.5kW AI data-center power supply powered by GaN and SiC that could meet 98% efficiency, complying with the Open Compute Project (OCP) and Open Rack v3 (ORv3) specifications. Additionally, Navitas created IntelliWeave, a patented new digital control technique that, when combined with high-power GaNSafe and Gen 3-Fast SiC MOSFETs, enables PFC peak efficiencies of 99.3% and reduces power losses by 30% compared with existing solutions.
Navitas will also highlight the world’s first mass-produced 650V Bi-Directional GaNFast™ power ICs and IsoFast™ high-speed isolated gate drivers. These technologies drive a paradigm shift from traditional two-stage to single-stage power topologies, optimizing data center power supply design, reducing form factors, and increasing rack space utilization.
“The exponential growth of AI computing power poses stringent challenges for data center infrastructure. The debut of our latest AI data center PSU achieves dual breakthroughs in efficiency and power density, demonstrating Navitas’ continuous innovation in GaN and SiC technologies and deep understanding of the data center industry”, said Charles Zha, SVP and APAC GM of Navitas. “With years of focus on the Asia-Pacific market, we remain committed to aligning cutting-edge technologies with local needs and industry strengths. We look forward to collaborating with industry partners to explore how GaN and SiC innovation can drive efficiency and density upgrades in AI data centers, ensuring computing development progresses along with a sustainable future.”
The “AI Tech Night” will take place on May 21st, 2025, 6:30 pm-9:00 pm, at the Courtyard by Marriott Taipei. To participate in the ‘AI Tech Night’ event, please contact info@navitassemi.com.
Original – Navitas Semiconductor
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GaN / LATEST NEWS / SiC / WBG2 Min Read
Infineon Technologies AG and Visteon Corporation, a global leader in automotive cockpit electronics, announced the companies have signed a Memorandum of Understanding (MOU) to advance the development of next-generation electric vehicle powertrains.
In this joint effort, Infineon and Visteon will collaborate and integrate power conversion devices based on Infineon semiconductors, with particular emphasis on wideband gap device technologies, which provide significant advantages in power conversion applications compared to silicon-based semiconductors. These devices include greater power density, efficiency and thermal performance, which contribute to improved efficiency and reduced system costs for next-generation power conversion modules for the automotive sector.
Future Visteon EV powertrain applications incorporating Infineon CoolGaN™ (Gallium Nitride) and CoolSiC™ (Silicon Carbide) devices may include battery junction boxes, DC-DC converters and on-board chargers. The resulting powertrain systems will conform to the highest efficiency, robustness and reliability.
“Working with Infineon allows us to integrate cutting-edge semiconductor technologies that are essential in improving power conversion efficiency and overall system capability of next generation electric vehicles,” said Dr. Tao Wang, Head of the Electrification Product Line of Visteon Corporation. “This collaboration will advance technologies that accelerate the transition to a more sustainable and efficient mobility ecosystem.”
“Visteon is a recognized innovator and an early adopter of new technologies, making them an ideal partner for us,” said Peter Schaefer, Chief Sales Officer Automotive, Infineon Technologies AG. “Together, we will push the boundaries of electric vehicle technology and provide superior solutions to the global automotive industry.”
Original – Infineon Technologies
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GaN / LATEST NEWS / PRODUCT & TECHNOLOGY / SiC / WBG2 Min Read
Cambridge GaN Devices (CGD) announced that Inventchip, a leading provider of SiC power devices and IC solutions headquartered in Shanghai, has successfully demo’d a 2.5 kW GaN-based CCM totem-pole PFC reference design using CGD’s ICeGaN® gallium nitride ICs. A key feature is ease-of use. ICeGaN ICs integrate interface circuitry and protection on the same GaN die as the HEMT. Therefore, any standard driver IC can be used. The Inventchip IVCC1104 totem pole PFC controller IC is also simple to use with no programming required. It offers optimized AC zero-crossing control, low THD and high robustness against AC disturbance.
DI CHEN | DIRECTOR, TECHNICAL MARKETING AND BUSINESS DEVELOPMENT, CGD
“Inventchip had an existing 2.5kW TPPFC reference design based on its controller and gate drivers using SiC MOSFETs in TO-247 packages. To evaluate the performance of GaN instead, Inventchip designed a TO-247 adapter board using our P2 25mΩ ICeGaN ICs and the ICeGaN design works perfectly without any modification of their circuits. It has demonstrated that the ICeGaN can significantly shorten the learning curve and allow engineers to bring new product faster to market.”DR. ZHONG YE |CTO , INVENTCHIP
“By using a TO247-4 adapter board to solder on a DFN-packaged ICeGaN device for a quick test on our EVM, despite the relatively long gate drive path and the extended drive power supply trace, the board was powered up successfully at the first shot with clean switching waveform. No abnormalities or shoot-through was observed from no-load to full-load conditions. The GaN’s performance is very impressive. The CGD GaN device has proven to be very noise-immune, user-friendly and highly efficient.”Having proved its efficiency and power density in low power charger designs, GaN is now being adopted by makers of server and data centre PSUs, inverters, industrial brick DC/DC converters and LED drivers. Soon, EV inverter drives of over 100 kW are expected to transition to GaN too. ICeGaN technology is especially suitable at higher power levels because of its proven reliability and robustness.
Original – Cambridge GaN Devices
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GaN / LATEST NEWS / SiC / WBG3 Min Read
Wise-integration will break new ground at PCIM Europe 2025, May 6–8 in Nuremberg. In collaboration with Savoy International Group, the company will debut its digital controller of a silicon carbide (SiC) power demonstrator model, underscoring its expansion into complementary wide-bandgap (WBG) technologies and showcasing its WiseWare® digital controller’s universality and adaptability across those technologies.
This marks a new market entry for Wise-integration—in particular, targeting SiC-based high-voltage applications in automotive and industrial sectors—while reinforcing that WiseWare® can serve as a common digital intelligence layer regardless of the underlying semiconductor material.
The WiseWare® 1 OBC SIC 7kW power demonstrator model builds on the company’s core expertise in GaN-based systems and digital control ICs, reinforcing its commitment to advancing the full spectrum of power semiconductor technologies. This cross-compatible, digital control solution for both GaN and SiC, enables flexible, efficient, and intelligent power systems across multiple WBG platforms.
“This demonstration of a silicon-carbide onboard charger (OBC) marks an important step in Wise-integration’s journey toward the automotive market,” said CEO Thierry Bouchet. “By showing that WiseWare® can reliably control high-voltage, high-power systems in an EV-relevant application, we’re validating our digital control platform as a strong candidate for next-generation onboard chargers. It’s a first step toward demonstrating that our technology is scalable, adaptable, and aligned with the needs of future EV platforms.”
The demonstrator is a prototype product for the company’s partner, Savoy International Group, a Tier 1 automotive supplier, whose e-mobility division collaborated with Wise-integration on a GaN charger embedded in e-bike batteries in 2023.
“This prototype has been developed specifically to support the electrification of Savoy’s innovative, light electric vehicles under the KILOW brand, as well as their broader ambition to promote fun, accessible, and sustainable mobility solutions,” Bouchet explained.
“Our previous collaboration with Wise-integration on the embedded GaN charger for our e-bike battery met all of our expectations for performance and helps us differentiate KILOW in a crowded field,” said Émile Allamand, CEO of Savoy Group. “The SiC onboard charger will enable us to diversify our EV offerings with a light, four-wheel vehicle under our KILOW brand.”
SiC technology delivers excellent thermal performance and is highly efficient under heavy loads—making it ideal for high-power components like traction inverters and fast chargers. Its ruggedness and maturity also contribute to its reliability in the demanding automotive environment. WiseWare®’s SiC demonstration shows that the company’s digital control platform is technology-agnostic, and can bring the same performance, modularity, and intelligence to SiC systems as it does to GaN systems.
Visit Wise-integration at Hall 6, Booth 450, to see how SiC solutions complement its award-winning GaN-based WiseWare® platform. The company will also share updates on key partnerships and its technology roadmap during the event.
Original – Wise-integration
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GaN / LATEST NEWS / WBG3 Min Read
EPC will exhibit its latest advancements in high-performance GaN technology at PCIM Europe 2025, taking place 6–8 May in Nuremberg, Germany.
Visit EPC in Hall 9, Stand 318 to see a wide array of GaN-based power solutions powering next-generation applications—from high-density computing to motor drives for humanoid robots, automotive electrification, and satellites. Live demonstrations will highlight EPC’s latest GaN FETs and ICs in real-world applications that emphasize smaller size, higher efficiency, and lower cost compared to silicon solutions.
Motor Drives: Powering Robotics, Automation, and More
From industrial automation to smart consumer devices, GaN-based motor drives offer higher efficiency, smaller size, and improved performance compared to traditional silicon solutions. EPC’s latest GaN technology powers motor drive applications across a wide range of industries, including:
- Humanoids & Quadrupeds – Enabling next-generation robotics with faster response times, lighter joints, and greater energy efficiency.
- Drone Motors – Delivering longer flight times, compact size, and precise control through high-speed switching.
- Power Tools – Extending battery life and increasing torque with compact, high-efficiency GaN motor drives.
- Vacuum Cleaners & Delivery Robots – Empowering smarter, more autonomous systems with high power density and thermal performance.
48 V = GaN: Powering the Future of High-Density Computing
Today’s high-density computing environments demand compact, efficient power solutions to meet rising performance and thermal requirements. EPC’s latest GaN technology for AC/DC server power and 48 V DC-DC power conversion delivers reduced losses, increased power density, enhanced thermal performance, and best-in-class efficiency—enabling more computing in less space.
Visit EPC at PCIM Europe 2025:
- Schedule a Meeting: EPC’s technical experts, including CEO Dr. Alex Lidow, will be on-site to discuss how GaN is driving innovation across multiple industries. To schedule a meeting during PCIM contact info@epc-co.com
- Exhibition Booth Hall 9, Stand 513: Visit EPC’s booth to explore our comprehensive portfolio of GaN-based solutions and applications.
- Technical Presentations: Attend our technical sessions to gain insights into the latest trends and advancements in GaN power conversion technology.
- GaN-Based 5 kW Four-Level Totem-Pole PFC Converter for AI Servers Power Supply; Speaker: Marco Palma
- Bodo’s Power Systems – GaN Expert Panel at PCIM 2025; Panelist: Alex Lidow, Ph.D.
- 5 kW Isolated 400 V to 50 V, DC-DC Converter for Server Power Supplies; Speaker: Michael de Rooij, Ph.D.
- Design of GaN FET-Based Multilevel Three-Phase Inverter for High Voltage Automotive Applications; Speaker: Fabio Mandrile, Polytechnical University of Turin
- Next Generation GaN Platform for High-Density DC-DC Converters; Speaker: Alex Lidow, Ph.D.
“PCIM Europe is the ideal stage to show how EPC’s GaN is transforming power electronics—from server power to robotics, we’re helping engineers unlock the full potential of wide bandgap solutions,” said Nick Cataldo, VP of Sales and Marketing at EPC.
Original – Efficient Power Conversion
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GaN / LATEST NEWS / SiC / WBG4 Min Read
Rohde & Schwarz will showcase its latest solutions and advanced techniques for testing and analyzing power electronic systems and components at PCIM Expo 2025 in Nuremberg, Germany. At the company’s booth (hall 7, booth 166), the spotlight will be on solutions utilizing the company’s cutting-edge test instruments to address the challenges of debugging next generation wide bandgap semiconductors like GaN and SiC.
Rigorous testing and advanced characterization methods help design engineers enhance the performance, efficiency, and reliability of their power electronic designs based on SiC and GaN devices, used in pioneering industries like e-mobility, renewable energy or AI data centers. Rohde & Schwarz will bring a selection of its comprehensive T&M portfolio to booth 166 in hall 7 of PCIM Expo 2025, taking place from May 6 to 8 at the Nuremberg Exhibition Center. The test solutions are tailored for power electronics applications where high efficiency, fast switching speeds, improved power density and high-temperature operation matter.
At the center of the presented setups will be the R&S RT-ZISO isolated probing system from Rohde & Schwarz. This next generation isolated probe has set new standards with unprecedented accuracy, sensitivity, dynamic range and bandwidth for wide bandgap (WBG) power designs with SiC and GaN. Rohde & Schwarz will showcase the advantage of the Isolated probing system over single-ended probes in a setup to investigate the switching behavior of a GaN-MosFET.
Double pulse testing is a method for evaluating the switching performance of SiC and GaN based power devices. Rohde & Schwarz is collaborating with industry expert PE-Systems GmbH for a stable and accurate approach to double pulse testing using the R&S®MXO 5 next generation oscilloscope from Rohde & Schwarz with eight channels in combination with the R&S RT-ZISO. At PCIM, visitors can experience accurate, reliable and fast double pulse testing on 1200 V SiC devices from Wolfspeed, typically used as traction inverters in the automotive industry.
Loadjump testing used to be a time-consuming manual process to verify a Buck converter’s load step response at varying input voltage levels, using only a few reference points. For this application, as well, Rohde & Schwarz collaborates with PE-Systems GmbH, who offers a test automation software. In combination with the MXO 5 oscilloscope and the R&S RT-ZISO isolated probing system, this solution not only reduces overall testing time but also maintains the same number of test points. At PCIM, the companies demonstrate automated loadjump testing of a Buck converter of Monolithic Power Systems, Inc. within a voltage range of 6V to 60V. The setup even allows for more reference points within the same timeframe and can be extended to include temperature control, facilitating the full automation of input voltage, load current, and temperature profile variations.
Rohde & Schwarz will also showcase its solutions for component characterization. The R&S®LCX LCR meters with customized impedance measurement functions are suitable for all discrete passive components up to 10 MHz. Users can easily characterize the voltage dependence of capacitances in core components of power converters like MLCCs with the R&S LCX. Combined with a sweep software tool, users can perform comprehensive sweep measurements and display them in numerous charts. The MFIA impedance analyzer from Zurich Instruments AG (a subsidiary since 2021) is capable of impedance spectroscopy for both low impedance components such as shunt resistors and DC-link capacitors and high impedance systems. It offers measurement modes for impedance analysis over frequency and time as well as other features such as integrated oscilloscope and spectrum analyzer capabilities.
Dr. Philipp Weigell, Vice President of the Industry, Components, Research & University Market Segment at Rohde & Schwarz, explains: “PCIM Expo is an important venue for us to highlight our advancements in wide bandgap semiconductor testing. Testing plays a critical role to improve power efficiency, reduce size, and manage heat more effectively in power conversion applications used in AI data centers, for instance. Through collaboration with industry experts and with our advanced testing solutions we enable our customers to develop reliable and efficient systems that meet the rigorous demands of modern data processing applications.”
Rohde & Schwarz will present these and other advanced test solutions at PCIM Expo 2025, from May 6 to 8, at booth 166, hall 7 of Nuremberg Exhibition Center. For more information on power electronics test solutions from Rohde & Schwarz, visit: https://www.rohde-schwarz.com/power-electronics
Original – Rohde & Schwarz