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Navitas Semiconductor Corporation and Cyient Semiconductors Private Limited, a fast-growing provider of ASIC, ASSP and power solutions, announced a strategic long-term partnership to accelerate GaN adoption in India and establish a complete end-to-end GaN ecosystem.
The collaboration outlines co-development of GaN products, digital and mixed-signal ICs, GaN-based system modules and design-enablement platforms addressing high-voltage, high-power markets in India, including AI data centers, electric mobility, performance computing, energy grid infrastructure and industrial electrification. The partners also intend to strengthen a local supply chain and manufacturing base aligned with the Government of India’s “Make in India” initiative, while deploying IC technologies to speed solution development in these segments.
Planned deliverables include products based on Navitas’ current GaN platforms alongside new devices tailored to India’s market needs. Cyient Semiconductors will focus on building a secure, local supply chain and ecosystem to reduce time-to-market for developers and OEMs across the region.
“This partnership represents a pivotal step in India’s semiconductor future in solving the complexities of power delivery at high voltages,” said Suman Narayan, CEO, Cyient Semiconductors. “By combining Navitas’ proven GaN technology with Cyient Semi’s design, manufacturing and supply-chain strengths, we’re creating a self-sustaining ecosystem that will accelerate the market adoption of GaN. Our goal is to make GaN accessible to every OEM looking to design, build and scale from India.”
“I believe the growth of GaN technology in India will exceed global trends, and Cyient Semiconductors is the perfect partner for Navitas to drive this revolution,” said Chris Allexandre, President and CEO, Navitas Semiconductor. “Together, Navitas and Cyient will power India’s vision of India for India—innovation, by India, for the world.”
The initiative is designed to empower Indian design houses and OEMs with locally sourced GaN components, manufacturing support and engineering collaboration, enabling faster development cycles and lowering barriers to GaN adoption. It also reinforces Cyient Semiconductors’ focus on driving semiconductor innovation, localization and scalability across critical technology sectors, while establishing a direct channel for Indian customers to access GaN technology with reliable procurement and technical support.
Original – Navitas Semiconductor
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VisIC Technologies announced the successful second closing of its Round B funding, securing $26 million to advance GaN power semiconductor technology for electric vehicles. The round was led by a global semiconductor leader, with Hyundai Motor Company and Kia joining as a strategic investor. The milestone strengthens VisIC’s position in high-performance GaN power devices for automotive traction inverters and next-generation mobility.
The global EV market is pushing for higher efficiency, longer driving range, and more sustainable power electronics. Traditional silicon is reaching its limits, and while SiC offers performance advantages, cost remains a barrier for mass adoption. VisIC’s D³GaN™ platform targets both 400 V and 800 V EV architectures, enabling lighter, smaller, and more energy-efficient traction inverters with scalability and reliability.
The new funding will accelerate key programs:
- Optimization, qualification, and release of Gen3 750 V GaN dice and power modules
- Development of Gen4 1350 V GaN technology to cover the full spectrum of EV designs
- Supply-chain stabilization and ramp-up of GaN deliveries for traction inverters
- Expansion of GaN solutions for emerging 800 V data-center power applications
“This investment marks a major milestone for VisIC and the global EV industry. Our D³GaN technology is redefining power electronics for electric vehicles, and the support of our strategic partners accelerates our mission to deliver high-efficiency, scalable solutions for the next generation of mobility,” said Tamara Baksht, CEO of VisIC Technologies.
“Hyundai Motor Company and Kia are committed to advancing sustainable mobility. Partnering with VisIC enables us to integrate cutting-edge GaN technologies into our EV platforms, enhancing efficiency, reliability, and performance as we shape the future of electric transportation,” said Hyundai Motor Company and Kia.
Original – VisIC Technologies
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Wise Integration, Powernet and KEC have signed a strategic memorandum of understanding to co-develop next-generation switched-mode power supply (SMPS) solutions tailored for AI server applications in South Korea. The collaboration supports the country’s broader push to scale AI infrastructure and deploy higher-density data centers.
Under the agreement, Wise Integration will provide GaN power devices, digital-control know-how and technical support. Powernet Technologies Corporation will lead new SMPS designs built on Wise’s WiseGan® and WiseWare® technologies. KEC Corporation will oversee backend manufacturing, including module integration and system-in-package production optimized for the thermal and reliability demands of AI-server racks.
The partners expect the program to accelerate competitive AI-server power supply designs, create new business opportunities in Korea’s AI-server market and shorten time-to-market by leveraging WiseGan® and WiseWare®. The initiative extends an earlier Wise Integration–Powernet collaboration focused on compact, digitally controlled power supplies for faster, smaller and more energy-efficient equipment.
AI servers require high power, generate significant heat and depend on SMPS architectures that convert high-voltage inputs (such as 400 V) to stable 48 V rails with minimal loss. GaN devices paired with digital control enable higher switching frequencies, improved efficiency and tighter management of fast, high-current load transients—attributes well suited to these workloads.
The effort aligns with South Korea’s investments in AI-dedicated data centers, including high-performance GPU clusters and digital infrastructure that demand more efficient, compact and scalable power-conversion systems. “Korea is moving quickly to build the next generation of AI data centers, and power architecture is a critical piece of that effort. Working with Powernet and KEC lets us bring GaN-based digital control into server-grade designs at scale—delivering the efficiency, thermal performance, and responsiveness that modern AI hardware depends on,” said Ghislain Kaiser, CEO of Wise Integration.
Beyond the MoU, Wise Integration continues to broaden its GaN plus digital-control platform to support partners as switching frequencies rise, thermal budgets tighten and efficiency targets become more aggressive. The company recently introduced WiseWare® 1.0 for totem-pole PFC and LLC topologies, a fully digital controller that, while aimed today at gaming, displays and industrial systems, shares the same architecture—high-frequency GaN operation, compact form factor and digitally managed efficiency—that naturally extends to server-class designs envisioned under this Korea-focused collaboration.
Original – Wise Integration
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Suzhou Inovance Automotive Systems Co., Ltd. and Innoscience (Suzhou) Technology Co., Ltd. announced that their next-generation 6.6kW on-board charger system, built on 650V GaN devices, has been successfully integrated into Changan vehicles. The result is a step change in charging efficiency and power density, raising the bar for automotive power electronics.
Inovance Automotive’s two-in-one architecture combines the on-board charger and DC-DC converter in a single unit. By pairing a globally optimized efficiency design with Innoscience’s 650V high-voltage GaN devices—known for ultra-low switching loss and high-frequency performance—the system delivers measurable gains:
· 30% increase in power density, reaching 4.8 kW/L
· Over 2% improvement in overall efficiency compared with similar products
· 20% reduction in system weight, supporting industry goals for higher efficiency and lightweight designThe jointly developed 6.6kW GaN OBC solution also improves vehicle packaging by saving space and enhancing integration flexibility at the platform level. Higher conversion efficiency shortens charging time for drivers and contributes to meaningful energy savings, ultimately supporting extended driving range.
Deploying this GaN-based OBC system in Changan vehicles marks a milestone for GaN in automotive power systems—a breakthrough that strengthens both Inovance Automotive and Innoscience as they expand in the EV sector. The companies plan to continue their collaboration to accelerate the shift toward higher efficiency and greater sustainability across next-generation electric vehicles.
Original – Innoscience Technology
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The U.S. International Trade Commission (ITC) has issued a preliminary ruling finding that Innoscience has violated one of the gallium nitride (GaN) technology patents held by Infineon Technologies AG. The ITC also confirmed the legal validity of both patents asserted by Infineon in the case.
The dispute centers on Innoscience’s alleged unauthorized use of Infineon’s patented GaN technologies. A final determination by the ITC is expected on April 2, 2026. Should the preliminary ruling be upheld, it will result in an import ban of the allegedly infringing Innoscience products into the United States.
“This ruling is another testament to the strength of Infineon’s intellectual property and confirms our commitment to vigorously defend our patent portfolio against infringements and ensuring fair competition in the market,” said Johannes Schoiswohl, Senior Vice President and Head of Infineon’s GaN Systems Business Line. “We remain dedicated to fostering innovation and advancing semiconductor technology to address the world’s most pressing challenges, from decarbonization to digital transformation.”
The decision in the U.S. adds to a series of favorable outcomes for Infineon in similar disputes. In a separate case in Germany, the German patent office recently upheld the validity of an Infineon GaN patent in a slightly amended form, and Infineon is pursuing infringement claims related to that patent in the Munich District Court. Additionally, in August 2025, the Munich District Court I ruled that another Infineon GaN patent had been infringed by Innoscience.
Infineon is a leading integrated device manufacturer in the GaN market and holds one of the industry’s most extensive intellectual property portfolios, with approximately 450 GaN patent families. GaN is a critical technology for high-performance, energy-efficient power systems used in applications ranging from renewable energy and AI data centers to industrial automation and electric vehicles.
By mastering all three essential materials in power electronics—silicon (Si), silicon carbide (SiC), and gallium nitride (GaN)—Infineon continues to play a pivotal role in advancing semiconductor innovation to support the global push for energy efficiency and sustainability.
Original – Infineon Technologies
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onsemi has signed a memorandum of understanding (MoU) with Innoscience to explore a strategic collaboration focused on expanding the production of gallium nitride (GaN) power devices. The agreement leverages Innoscience’s proven 200mm GaN-on-silicon process and high-volume manufacturing capabilities, alongside onsemi’s strengths in system integration, drivers, and packaging, with the shared goal of accelerating the delivery of cost-effective, energy-efficient GaN solutions to a global market.
The collaboration aims to address the growing demand for high-efficiency power systems across industrial, automotive, telecom, consumer, and AI data center applications by combining onsemi’s GaN power solutions with Innoscience’s manufacturing scale. Initial focus will be on the low and medium-voltage GaN range (40–200V), with future development plans targeting a global GaN power device market projected to reach $2.9 billion by 2030.
Key benefits of the collaboration include:
- Expanded GaN Portfolio: The partnership supports the extension of onsemi’s low and medium-voltage GaN product line.
- Scalable Manufacturing: Access to Innoscience’s high-volume 200mm GaN-on-silicon capacity enables true mass-market deployment.
- System-Level Innovation: Combines advanced packaging, drivers, and integration expertise to support rapid time-to-market and cost-effective system design.
- Market Reach: Enables high-efficiency, compact power solutions for motor drives, EV converters, DC-DC power supplies, telecom infrastructure, and data centers.
Antoine Jalabert, Vice President of Corporate Strategy at onsemi, noted: “As power demands rise across every sector, GaN offers higher efficiency, smaller size, and lower energy losses compared to other materials. Through a collaboration with Innoscience, we expect to access the industry’s largest GaN production footprint and quickly scale our offerings to enable broader adoption in mainstream applications.”
Yi Sun, Senior Vice President of Product & Engineering at Innoscience, added: “GaN technology is essential to building more efficient power systems and reducing global energy consumption. We are excited to explore this collaboration with onsemi to accelerate GaN adoption and establish a platform for integrated system development.”
onsemi expects to begin sampling initial devices in the first half of 2026. This initiative builds upon its comprehensive intelligent power portfolio, which includes silicon, silicon carbide (SiC), and GaN technologies—positioning the company to deliver optimal power systems across next-generation electrified and AI-driven markets.
Original – onsemi
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Fagor Electrónica, in collaboration with MONDRAGON Ventures, has announced an investment in Semi Zabala, a company specializing in the development of Gallium Nitride (GaN) HEMT transistors. The move reflects an ongoing focus on innovation and strategic diversification in the semiconductor sector.
This investment aligns with efforts to enhance access to next-generation GaN-based power technologies and supports the expansion of semiconductor capabilities in sectors such as aerospace and industrial power electronics.
Semi Zabala, currently progressing with its “Beyond The Power” industrial initiative, recently inaugurated a facility in Zubieta dedicated to the manufacturing and testing of power semiconductors. The new site is positioned to contribute to the regional semiconductor value chain and further establish Euskadi as a center for microelectronics development.
The collaboration reinforces regional industry cooperation and supports the advancement of wide-bandgap semiconductor technologies in emerging and high-performance applications.
Original – Fagor Electrónica
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Infineon Technologies AG has expanded its cooperation with Anker to develop a high-speed, compact charger capable of delivering up to 160 watts of power. The project resulted in the release of a charger that combines compact design with high power density, incorporating Infineon’s digital controller and gallium nitride (GaN) technology.
The charger utilizes Infineon’s XDP™ XDPS2221E hybrid-flyback digital controller and CoolGaN™ transistors to support high-frequency, high-efficiency power conversion. Key design features include the integration of power factor correction (PFC) and hybrid-flyback stages to optimize performance and reduce component size. The charger provides up to 140 watts from individual USB-C ports, with dynamic allocation of 160 watts across multiple devices.
Infineon’s system-level approach includes the use of integrated GaN driver-transistor combinations and dual-transistor packages, allowing for improved thermal performance and reduced board space. The overall design minimizes peripheral components and supports cost-effective system layouts.
The collaboration is supported by an innovation center in Shenzhen, established by both companies to focus on efficient power solutions and fast-charging system development.
The new charger will be featured during CES 2026 in Las Vegas.
Original – Infineon Technologies
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Innoscience and Allegro MicroSystems have announced a collaborative 4.2kW all-GaN power reference design aimed at meeting the efficiency and density demands of next-generation AI data centers and edge computing platforms.
The solution integrates Innoscience’s proprietary GaN power transistors with Allegro’s AHV85110 isolated gate driver, known for its integrated bias supply and self-powered architecture. This combination enables Titanium-grade efficiency and power densities exceeding 100 W/in³, addressing both performance and compactness requirements in high-power computing environments.
The reference design leverages a fully GaN-based architecture optimized for fast switching and low electromagnetic interference (EMI). The AHV85110 driver’s low common-mode capacitance and integrated power supply contribute to simplified system design, reducing passive component count on the driver board by up to 80% and enabling a 15% reduction in total system components.
This collaboration underscores the growing role of GaN in AI and hyperscale infrastructure, offering benefits in thermal design, board layout, and system integration. With this solution, engineers gain a ready-to-use platform that supports the development of compact, high-efficiency power conversion systems suitable for evolving compute-intensive applications.
The 4.2kW reference design is now available from Innoscience and provides a robust foundation for accelerating development in high-performance power electronics.
Original – Innoscience Technology
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STMicroelectronics has launched a new family of integrated GaN-based smart power components aimed at improving efficiency, performance, and form factor in motor drive applications across consumer and industrial markets.
The new GaNSPIN system-in-package platform integrates high-voltage GaN transistors and gate drivers, delivering the benefits of wide-bandgap technology to motorized systems such as household appliances, power tools, and industrial equipment. This innovation allows manufacturers to reduce power losses, lower system costs, and design more compact modules.
The initial devices—GANSPIN611 and GANSPIN612—are designed for applications up to 400 W, such as compressors, pumps, and fans. Key features include:
- Integrated 650V GaN half-bridge and driver in a compact 9mm x 9mm QFN package
- Low RDS(on) (138mΩ for GANSPIN611, 270mΩ for GANSPIN612) to minimize conduction losses
- Optimized switching control to manage EMI and stress on motor windings
- Adjustable slew rates for system-level tuning
- Comprehensive protections, including UVLO, OVP, OCP, thermal shutdown, and interlocking
- Integrated bootstrap diode for simplified high-side drive
- Built-in standby function to support energy-saving modes
The GaNSPIN platform supports both 110V and 230V AC input systems, targeting universal appliance compatibility. By enabling heatsink-free operation in many cases, the devices help reduce board size by up to 60% and lower the bill of materials—key considerations in both cost-sensitive and space-constrained designs.
These latest GaN-based ICs from ST extend the benefits of wide-bandgap technology beyond power adapters and chargers, bringing new levels of efficiency and integration to motion control systems in a broad range of applications.
Original – STMicroelectronics
