Navitas Semiconductor invites visitors to experience “Planet Navitas” at PCIM 2024 (June 11th-13th) and see how industry-leading GaN and SiC solutions deliver optimal performance in a broad array of fast-growing markets and applications from 20 W to 20 MW.

Aligned with Navitas’ mission to “Electrify Our World™”, the “Planet Navitas” booth invites visitors to discover how next-gen GaN and SiC technology enable the latest solutions for fully-electrified EV transportation, AI data centers, industrial compressors, drives, and robotics plus renewable energy sourcing and storage.

Each example highlights end-user benefits such as increased portability, longer range, faster charging, and grid independence, along with a focus on how low-carbon-footprint GaN and SiC technology can save over 6 Gtons/yr CO2 by 2050.

“PCIM is a key event in the power-electronics calendar,” says Alessandro Squeri, Navitas’ senior director for European sales. “Complementary GaNFast and GeneSiC portfolios, with comprehensive, application-specific system design support, accelerate customer time-to-market with sustainable performance advantages. ‘Planet Navitas’ represents the very real, inspiring implementation of GaN & SiC that makes up a $1.6B identified customer pipeline as part of a vast $22B/year market opportunity.”

Major technology updates and releases include GaNSafe™ – the world’s most-protected, most reliable, and highest-performance GaN power, Gen-4 GaNSense™ Half-Bridge ICs – the most integrated GaN devices, and Gen-3 Fast GeneSiC power FETs – for game-changing motor drive and energy-storage applications.

In addition to the exhibition, PCIM 2024 includes peer-review technical presentations, including:

11th June, 13:00 – 14:30, Hall 10.1

  • “Low-Cost High-Density 300 W / 20 V AC-DC Converter Enabled by GaN Power ICs”– Tom Ribarich, Sr. Director of Strategic Marketing, Navitas Semiconductor
    • A low-cost 300 W high-density AC-to-DC converter has been designed and demonstrated to achieve >96% peak efficiency and 270 cc. The circuit topologies include a 2-phase interleaved PFC input stage, an LLC DC-DC stage, and a synchronous rectification output stage. The design includes GaN Power ICs and off-the-shelf controllers running at 300 kHz. This new design has resulted in a cased power density of 1.1 W/cc.

12th June, 15:30 – 17:00, Foyer

  • Evaluation of SiC Devices for Over 500 kHz Application Based on Buck Circuit – Minli Jia, Sr. Staff Applications Engineer, Navitas Semiconductor
    • This paper selects three 1200 V SiC devices of similar specifications and different manufacturers for analysis and experimental research and designs a Buck converter with an output power of 3.6 kW and a switching frequency of 600 kHz. The efficiency and heat of three SiC types were tested under the same working conditions, and the results showed that the SiC with fast turn-off characteristics and low thermal resistance was more suitable for high-frequency converter applications.

Original – Navitas Semiconductor