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Alpha and Omega Semiconductor Limited has inaugurated a new OSAT (Outsourced Semiconductor Assembly and Test) facility in Sanand, Gujarat, in partnership with Kaynes Semicon, marking a significant expansion of its global manufacturing footprint.
The facility has commenced high-volume production of AOS’s IPM5 (Intelligent Power Modules), which integrate 17 dies into a single package to enable advanced motor control and energy-efficient applications. The implementation of AOS’s proprietary IPM5 process at the site represents a key step in localizing advanced semiconductor packaging capabilities in India.
The project aligns with the broader objectives of the India Semiconductor Mission and highlights increasing momentum toward regional diversification of semiconductor supply chains. The rapid execution—from groundbreaking to production in just 14 months—demonstrates accelerated ecosystem development in India’s semiconductor manufacturing landscape.
From a strategic perspective, the collaboration combines AOS’s device and module expertise with Kaynes Semicon’s manufacturing capabilities, creating a scalable platform for both domestic and global markets. The facility is positioned not only to serve India’s growing demand for power semiconductors but also to support international supply chains under a “Made in India, for the World” approach.
From a market standpoint, this move reflects a broader industry trend toward geographic diversification of backend manufacturing, particularly in power semiconductors where packaging and integration (e.g., IPMs) are critical value drivers. It also underscores India’s emerging role as a strategic hub for OSAT and power electronics manufacturing, supported by government initiatives and increasing global investment.
Original – Alpha and Omega Semiconductor
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Toshiba Corporation has signed a memorandum of understanding (MoU) with ROHM Co., Ltd., Mitsubishi Electric Corporation, Japan Industrial Partners, and TBJ Holdings Corporation to begin discussions on a potential integration of their semiconductor and power device businesses.
The proposed integration would combine Toshiba Electronic Devices & Storage Corporation’s semiconductor operations with ROHM’s semiconductor business and Mitsubishi Electric’s power device division. The initiative aims to create a larger, more competitive entity capable of strengthening Japan’s position in the global power semiconductor market.
This development builds on ongoing collaboration between Toshiba and ROHM, including a joint plan submitted in 2023 to Japan’s Ministry of Economy, Trade and Industry to support domestic power semiconductor production. That initiative was recognized under government programs aimed at securing stable semiconductor supply chains.
Strategically, the inclusion of Mitsubishi Electric signals an ambition to achieve greater scale and technological depth, particularly in power devices—an area critical for electrification, renewable energy, and industrial systems. The integration could enhance manufacturing efficiency, expand customer reach, and consolidate R&D capabilities across the participating companies.
From a market perspective, this move reflects increasing regional consolidation efforts in response to intensifying global competition, especially from leading players in Europe, the U.S., and China. Japan is seeking to reinforce its domestic semiconductor ecosystem, particularly in power semiconductors where it retains strong technological heritage but faces scale challenges.
At this stage, the agreement marks the start of formal discussions. No final decisions have been made regarding transaction structure or implementation, with further details to be determined as negotiations progress.
Original – Toshiba
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PANJIT Group has signed a Memorandum of Understanding with Silicongear Corporation and plans to acquire an approximately 30% equity stake, strengthening its capabilities in MOSFET design and supply.
Silicongear specializes in power semiconductor design, particularly MOSFET development. Through this partnership, PANJIT will integrate additional design expertise to enhance its existing MOSFET portfolio, targeting growing demand across automotive, industrial control, and AI-related high-power applications.
Strategically, the collaboration expands PANJIT’s ecosystem of design partners while improving supply flexibility for its 8-inch MOSFET wafer production. This is particularly relevant as the industry faces increasing pressure on supply chain resilience and diversification, especially in mature-node power semiconductor segments.
From a market perspective, this move reflects a broader trend among power semiconductor players to vertically integrate design capabilities and secure upstream partnerships. By combining internal manufacturing strengths with external design innovation, PANJIT aims to improve time-to-market, strengthen competitiveness, and ensure long-term supply reliability.
The partnership also positions PANJIT to better address evolving demand in AI infrastructure and industrial electrification, where robust, cost-efficient silicon-based power devices continue to play a critical role alongside emerging wide bandgap technologies.
Original – PANJIT International
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Infineon Technologies AG and DG Matrix have announced a strategic collaboration to enhance power conversion efficiency for AI data centers and industrial electrification through advanced solid-state transformer (SST) technology.
As part of the partnership, DG Matrix will integrate Infineon’s latest-generation silicon carbide (SiC) devices into its Interport™ multi-port SST platform. This integration is expected to improve efficiency, power density, and reliability while strengthening DG Matrix’s semiconductor supply chain as it scales deployments globally.
Solid-state transformers represent a key shift from traditional copper- and iron-based systems, enabling significantly smaller and lighter designs—up to 14 times smaller and 40 times lighter—while offering faster deployment and enhanced control of voltage, power quality, and energy flow. These systems are increasingly critical for connecting medium-voltage grids directly to low-voltage applications such as AI data centers, EV charging infrastructure, renewable energy systems, and industrial microgrids.
From a market perspective, this collaboration highlights the growing importance of SiC in next-generation grid infrastructure. Infineon estimates the semiconductor market for SSTs could reach up to $1 billion within the next five years, driven by rising electricity demand from AI and electrification trends.
The partnership also reflects a broader industry shift toward system-level innovation, where advanced semiconductor technologies like SiC are enabling new power architectures. DG Matrix’s multi-port SST design, combined with Infineon’s SiC roadmap, positions both companies to capitalize on emerging high-voltage, high-efficiency infrastructure requirements.
Looking ahead, the two companies plan continued alignment on future SiC developments as DG Matrix expands toward higher-voltage platforms and larger-scale deployments, supporting the transition to more efficient and resilient global power systems.
Original – Infineon Technologies
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ROHM Co., Ltd. and Suchi Semicon Pvt. Ltd. have announced a strategic partnership to strengthen semiconductor manufacturing capabilities in India and support growing demand from both domestic and global markets.
The collaboration combines ROHM’s expertise in semiconductor device technology and global market presence with Suchi Semicon’s manufacturing capabilities and operational execution. Together, the companies aim to build a scalable and reliable manufacturing framework aligned with evolving industry requirements.
The partnership aligns with India’s “Make in India” initiative to expand domestic semiconductor production while maintaining global manufacturing standards. By establishing local capabilities, the companies aim to enhance supply chain resilience and provide trusted manufacturing solutions for customers.
As part of the collaboration, ROHM is evaluating the outsourcing of back-end processes for power semiconductor devices and integrated circuits to Suchi Semicon.
Key elements of the initiative include:
- Technical evaluations for manufacturing readiness
- Potential mass production shipments starting in 2026
- Development of an early-stage semiconductor manufacturing framework in India
The companies also plan to share a roadmap to expand the range of locally manufactured semiconductor packages, gradually broadening the scope of production activities.
Beyond manufacturing, the partnership will also focus on business development and market engagement. Both companies recognize increasing demand for locally manufactured semiconductors in India, particularly across industries such as automotive, industrial electronics, and energy systems.
To address this opportunity, ROHM and Suchi Semicon plan to:
- Conduct joint marketing initiatives leveraging Suchi Semicon’s local market expertise
- Expand collaboration into additional semiconductor ecosystem activities
- Explore new business opportunities aligned with India’s growing electronics sector
The companies emphasized that the alliance is intended to evolve into a long-term strategic partnership, supporting the sustainable growth of India’s semiconductor industry while strengthening global supply chains.
Original – ROHM
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ROHM Co., Ltd. has announced plans to integrate its proprietary GaN power device development and manufacturing technologies with process technology from TSMC, establishing an end-to-end GaN production system within the ROHM Group.
Under a newly signed license agreement, TSMC’s GaN process technology will be transferred to ROHM’s Hamamatsu facility, enabling the company to strengthen its supply capabilities in response to rapidly growing demand for GaN in applications such as AI servers and electric vehicles (EVs).
Gallium nitride (GaN) power devices offer superior high-voltage and high-frequency performance, enabling higher efficiency and reduced system size. While already widely adopted in consumer applications such as AC adapters, GaN is increasingly being used in high-voltage systems including:
- Power units for AI servers
- On-board chargers (OBCs) for EVs
Demand in these segments is expected to accelerate further as electrification and AI infrastructure continue to expand.
ROHM has been active in GaN development for years. The company established mass production of 150V GaN devices at ROHM Hamamatsu in March 2022. In the mid-power range, ROHM strengthened its supply structure through external collaborations — with TSMC as a key partner.
Key milestones in the collaboration include:
- Adoption of a 650V GaN process from TSMC beginning in 2023
- A December 2024 partnership agreement focused on automotive GaN
The newly announced technology integration represents a deeper evolution of this collaboration.
ROHM aims to complete the technology transfer and establish the new production system in 2027, positioning the company to meet expanding demand in AI server and automotive applications.
Upon completion of the transfer, ROHM and TSMC will amicably conclude their automotive GaN partnership. However, both companies stated they will continue working together to advance higher-efficiency and more compact power supply systems.
By bringing GaN production capabilities fully in-house while leveraging TSMC’s advanced process technology, ROHM is strengthening its long-term competitiveness in next-generation power semiconductors.
Original – ROHM
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Okmetic is participating in WIBASE (Wide Bandgap Semiconductor Power Electronics), a Finnish initiative focused on accelerating wide bandgap semiconductor technologies for next-generation power electronics. The three-year program aims to strengthen national capabilities spanning device processing, prototyping, integration, packaging, testing and lifetime modelling, supporting the shift toward more efficient and sustainable power conversion.
Coordinated by VTT Technical Research Centre, the WIBASE consortium brings together ten partners, including six companies and four Finnish research organizations. The industrial participants cover the value chain from advanced materials and thin-film expertise to engineered silicon substrates and end applications in power electronics. The project is funded by Business Finland.
WIBASE targets several barriers that can slow wide bandgap adoption, including device and module reliability, material defects, thermal management challenges and high-temperature interconnect technologies. The initiative also emphasizes collaboration with leading international research groups and is designed to support technology development, know-how growth and IP creation in wide bandgap power technologies.
Within WIBASE, Okmetic is working with project partners to develop and characterize optimized silicon substrates for GaN power devices. The company highlighted the role of GaN-on-Si in combining gallium nitride’s high electron mobility, thermal stability and high-voltage capability with silicon’s scalability, stable supply base and cost-efficient high-volume manufacturing potential. Okmetic said its contribution builds on its experience supplying Power GaN Substrate wafers, with the goal of providing a reliable and well-controlled silicon platform aligned with performance and manufacturability requirements.
Okmetic expects WIBASE to help establish a Finnish expertise cluster in wide bandgap power electronics, reinforcing technological self-sufficiency, strengthening IP creation and improving competitiveness across the semiconductor and power electronics ecosystem. The outcomes are also positioned to benefit the broader power device sector through advances in materials, silicon substrates and manufacturing know-how.
WIBASE partners in Finland include Okmetic, VTT, Aalto University, LUT University, University of Helsinki, ABB, Picosun, Danfoss Drives, Comptek Solutions and Kempower.
Original – Okmetic
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GlobalFoundries (GF) and Renesas Electronics Corporation announced an expanded strategic collaboration through a multi-billion-dollar manufacturing partnership that broadens Renesas’ access to GF’s differentiated technology platforms. The companies said the agreement is designed to support more secure, resilient supply chains and aligns with U.S. priorities to reinforce domestic semiconductor production for economic and national security.
With vehicles becoming more intelligent and electrified and factories increasingly automated, both companies emphasized that dependable semiconductor supply is now mission-critical. Chips used for functions such as radar-based advanced driver assistance, battery management in EVs and secure connectivity in industrial IoT systems require consistent availability and high reliability. GF’s manufacturing footprint across the U.S., Europe and Asia is positioned to provide supply assurance and flexibility for these markets.
Under the expanded partnership, Renesas will gain broader access to GF’s portfolio, including FDX™ (FD-SOI), BCD and feature-rich CMOS technologies with non-volatile memory features, supporting products such as SoCs, power devices and MCUs. The companies said tape-outs under the expanded collaboration are on track to begin in mid-2026.
The agreement is expected to start with manufacturing in the U.S. and extend across GF’s global network, including sites in Germany and Singapore, as well as through GF’s manufacturing partnership in China. Renesas and GF also said they are evaluating the option of porting select GF process technologies into Renesas’ inhouse fabs in Japan to further strengthen manufacturing resilience and support future capacity needs.
“This partnership strengthens a proven relationship and underscores GF’s role as a trusted partner for essential semiconductor technologies,” said Tim Breen, CEO of GlobalFoundries. He pointed to the rapid evolution of automotive electronics and the growing importance of semiconductors in systems such as advanced driver assistance, battery management and secure connectivity, areas where GF’s differentiated platforms are designed to deliver performance and efficiency under demanding conditions.
“Access to a broader range of GF technologies gives us the flexibility and supply assurance our customers need,” said Hidetoshi Shibata, CEO of Renesas. He added that the expanded partnership is intended to provide stable, long-term supply while maintaining high quality and reliability, as demand accelerates for electrification, connectivity and rising compute requirements driven by AI applications.
GF noted that with the expanded partnership, it now manufactures semiconductors used by the top three automotive MCU manufacturers globally. The companies positioned the collaboration as timely support for the automotive shift toward software-defined vehicles, electrification and advanced safety systems, all of which depend on a secure and resilient semiconductor supply chain.
Original – GlobalFoundries
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Okmetic has entered volume production at its expanded Vantaa fab in Finland. The site focuses on 150–200 mm silicon and bonded silicon-on-insulator (SOI) wafers, with the expansion significantly increasing 200 mm polished wafer capacity.
“With this expansion, Okmetic strengthens its position as an EU-based, one-stop supplier for 150 to 200 mm silicon wafer platforms serving the MEMS, sensor, RF, and Power markets. The increase in 200 mm polished wafer capacity strengthens long-term supply stability for critical semiconductor applications,” said President and CEO Kai Seikku.
Okmetic produced the first wafers from the expanded fab in June 2025, launching a structured qualification and ramp phase. With volume production now underway in early 2026, the company has started delivering wafers from the expanded capacity to customers, supporting long-term supply readiness across MEMS, RF, Power and GaN-based applications.
The Vantaa expansion is part of Okmetic’s broader plan to more than double capacity by 2030. Construction began in early 2023 and adds more than 40,000 m², including a 6,000 m² cleanroom as well as new crystal growth and wafering areas. Okmetic said the fab upgrade incorporates state-of-the-art equipment with a focus on energy efficiency.
The latest investment builds on prior capacity additions, including the doubling of bonded SOI production capacity between 2017 and 2021 and the introduction of a patterning line for Cavity SOI (C-SOI®) production in 2019. By expanding 200 mm polished wafer output, Okmetic aims to better meet evolving industry demand while reinforcing Europe-based supply of 150–200 mm wafer platforms.
Original – Okmetic
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Efficient Power Conversion (EPC) announced a broad licensing agreement with Renesas Electronics Corporation aimed at accelerating adoption of GaN in high-efficiency power systems.
Under the agreement, Renesas will gain access to EPC’s low-voltage eGaN technology and EPC’s established supply-chain ecosystem. The companies plan to collaborate over the next year to stand up internal wafer fabrication capability for these products. Renesas will also second-source several EPC GaN devices that are already in mass production, a move intended to improve supply-chain resilience and long-term availability for customers.
The partnership is framed around the rising demand for higher efficiency, higher power density, and lower carbon footprints in power conversion, where silicon is increasingly constrained by physical limits. GaN transistors, by contrast, enable faster switching, higher efficiency, and smaller form factors—benefits that are driving architecture shifts from consumer applications to AI data center power.
“Together, EPC and Renesas are forming a global alliance to deliver state-of-the-art power efficiency – cutting costs in AI data centers and enhancing autonomous systems,” said Alex Lidow, CEO of EPC.
Renesas recently expanded its GaN position through the acquisition of Transphorm, strengthening its high-voltage GaN portfolio for applications such as AC-DC power supplies, EV chargers, solar inverters, and industrial motor drives. By adding EPC’s low-voltage eGaN expertise, Renesas aims to broaden its portfolio across low- to high-voltage segments, supporting high-volume opportunities such as AI power architectures from 48 V down to 12 V and 1 V, as well as client computing and battery-powered designs.
“Expanding our business into low-voltage GaN allows us to serve the fastest-growing power segments,” said Rohan Samsi, VP, GaN Business Division at Renesas. “This agreement with EPC complements our established high-voltage 650 V+ portfolio and enables us to capitalize on high-volume markets such as AI power architectures from 48 V down to 12 V and 1 V, as well as client computing and battery-operated applications.”
Original – Efficient Power Conversion
