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Infineon Technologies has officially inaugurated a new semiconductor backend manufacturing facility in Bangkok, Samut Prakan, Thailand. The site adds assembly, testing and wafer test capacity to the company’s global manufacturing network and is designed for further expansion.
The greenfield facility has been designed to scale to as many as five manufacturing modules. Operations are starting with Module A, and Infineon said the site could eventually become one of its largest backend manufacturing locations.
The Bangkok facility currently employs around 350 people. Infineon expects the workforce to increase to approximately 1,000 as Module A ramps up. The company is also working with universities, educational institutions and industry partners in Thailand on workforce development.
The site incorporates cleanroom, semiconductor assembly and test capabilities as well as wafer testing. Infineon has implemented a high level of automation and a digital manufacturing infrastructure to support large-volume production and accommodate new technologies and manufacturing requirements.
Production at the facility will support semiconductor products for automotive, industrial and energy infrastructure applications. The additional backend capacity complements Infineon’s ongoing expansion of its frontend semiconductor manufacturing operations.
The Bangkok location also expands Infineon’s manufacturing presence in Southeast Asia, providing access to the region’s semiconductor supply chain, customer markets and logistics infrastructure.
Infineon said the facility operates using 100% green electricity and incorporates water recycling and rainwater collection systems. Solar modules installed at the site also provide on-site renewable electricity generation.
Original – Infineon Technologies
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Infineon Technologies will supply silicon carbide power devices to Eaton for its MVSST 2.0 medium-voltage solid-state transformer platform. The system is designed for deployment across the Asia-Pacific region and targets emerging 800VDC power distribution architectures for AI data centers.
Eaton’s MVSST 2.0 is designed to connect high-density computing infrastructure to the electricity grid while reducing the number of power conversion stages compared with conventional architectures. The platform uses SiC power semiconductors to support higher conversion efficiency, increased power density and greater deployment flexibility.
The solid-state transformer targets the increasing power requirements of AI data centers, where medium-voltage power conversion and DC distribution are being evaluated to reduce conversion losses and simplify power delivery between the grid and computing infrastructure.
Eaton’s MVSST 2.0 combines the company’s power distribution and conversion technology with Infineon’s SiC devices. According to the companies, the platform is among the first medium-voltage solid-state transformer systems to achieve IEC certification.
The collaboration initially focuses on Eaton’s 800VDC data center architecture and deployment in APAC. The companies are also evaluating future solid-state transformer platforms using 2.3kV and 3.3kV SiC power modules.
These higher-voltage SiC modules are being considered for future AI data center power systems as well as grid modernization and renewable energy applications, with the objective of supporting higher system voltages, improved conversion efficiency and increased system reliability.
Original – Infineon Technologies
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LATEST NEWS / PRODUCT & TECHNOLOGY / PROJECTS / SiC / TOP STORIES / WBGSeptember 29, 2026
2 Min ReadNavitas Semiconductor has been selected by the U.S. Army for the ALATTIS program to develop and validate next-generation 10kV silicon carbide power semiconductor technology. The project will focus on SiC insulated-gate bipolar transistors and associated PiN diode technologies for high-power defense and infrastructure applications.
ALATTIS, or Accelerated, Large-Area, 10kV SiC IGBT, is intended to establish a domestic manufacturing process for ultra-high-voltage SiC devices rated at 10kV and above. The program will involve iterative device design, fabrication, testing and process validation.
The project is sponsored by the Army Research Laboratory, part of the U.S. Army Combat Capabilities Development Command, and is supported by the Joint Experimentation and Technology Accelerator. Its objective includes developing a U.S.-based manufacturing process for 10kV SiC IGBTs that is not currently available domestically, according to Navitas.
Navitas plans to develop the 10kV SiC IGBTs using its patented trench-assisted planar (TAP) architecture and integrate the devices with high-voltage SiC PiN diode technology. The resulting devices are intended for mission-critical systems requiring high-voltage and high-power switching.
The company’s existing GeneSiC portfolio spans voltage ratings from 650V to 6.5kV and includes SiC MOSFETs based on its TAP architecture. Navitas said the portfolio is supported by a U.S.-anchored engineering, manufacturing and supply chain infrastructure.
Navitas has previously developed several ultra-high-voltage SiC devices, including 6.5kV SiC thyristors in 2010, 10kV to 15kV SiC PiN diodes in 2012 and commercially released 6.5kV SiC MOSFETs in 2021.
The ALATTIS project will extend the company’s development activities beyond SiC MOSFETs into 10kV-class SiC IGBTs, with fabrication and testing forming part of the program’s effort to establish a validated domestic manufacturing process.
Original – Navitas Semiconductor
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Nexperia and Tata Electronics have entered a strategic partnership covering semiconductor wafer manufacturing, assembly and test, technology development and ecosystem collaboration in India.
The agreement is structured around three areas: front-end wafer fabrication, back-end assembly and test, and technology and ecosystem development. The companies intend to establish a long-term manufacturing relationship spanning multiple stages of the semiconductor production chain.
Under the front-end collaboration, the companies are preparing for production of Nexperia’s MOSFET portfolio at Tata Electronics’ planned 300mm semiconductor fab in Dholera, Gujarat. The facility will provide additional wafer manufacturing capacity for Nexperia’s power semiconductor products.
The partnership also covers assembly and testing of Nexperia discrete semiconductor products at Tata Electronics’ semiconductor packaging facility in Jagiroad, Assam. The companies said the arrangement is intended to increase manufacturing flexibility and establish scalable production capacity for Nexperia.
Beyond manufacturing, Nexperia and Tata Electronics plan to collaborate on semiconductor technology development, research and broader ecosystem initiatives. The cooperation will combine Nexperia’s expertise in discrete, power and analog semiconductors with Tata Electronics’ developing wafer fabrication and semiconductor packaging capabilities.
Tata Electronics is constructing a commercial semiconductor fab in Dholera and a semiconductor assembly and test facility in Jagiroad. The company said the two projects represent a combined investment of $14 billion and are being developed to serve customers across multiple semiconductor end markets.
The partnership adds Nexperia as a manufacturing customer for both Tata Electronics facilities, covering front-end production of MOSFETs at the 300mm Dholera fab and back-end assembly and test of discrete devices at the Jagiroad site.
Original – Nexperia
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Infineon Technologies and SolarEdge Technologies have expanded their collaboration to develop solid-state circuit breaker (SSCB) technology for high-voltage DC power distribution in AI and hyperscale data centers. The work targets protection requirements associated with emerging 800VDC data center architectures.
SolarEdge is leading development of the SSCB solution, while Infineon is supplying its CoolSiC JFET technology for the protection devices. The SSCBs are intended for the power distribution layer between solid-state transformers (SSTs) and compute racks.
High-voltage DC distribution presents different protection requirements from conventional AC systems because DC does not have a natural current zero. This makes mechanical interruption more challenging due to arcing and limits the speed at which conventional circuit breakers can isolate faults.
The solid-state circuit breakers under development are designed to interrupt faults within a few microseconds without using mechanical contacts. Infineon’s SiC JFETs provide the switching elements for the protection system, combining low-loss operation with the robustness required for high-power DC distribution.
The expanded collaboration builds on the companies’ existing work on SolarEdge’s solid-state transformer platform, announced in November 2025. The SST uses Infineon SiC components and is designed to convert medium-voltage inputs of 13.8kV to 34.5kV directly to 800VDC to 1500VDC at more than 99% efficiency.
SolarEdge is developing an 800VDC powertrain for AI data centers that covers conversion, distribution and protection from the medium-voltage grid connection to the compute rack. The SSCB technology adds high-speed fault isolation to this DC-native power architecture.
Infineon is supporting the platform with its silicon, SiC and GaN power semiconductor portfolio, while SolarEdge is responsible for the power distribution architecture and SSCB design.
Original – Infineon Technologies
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GlobalFoundries (GF) and Monolithic Power Systems (MPS) have signed a long-term manufacturing agreement to deploy MPS’s proprietary process technology at GF’s 300mm semiconductor manufacturing facility in Singapore.
The collaboration is expected to expand manufacturing capacity for MPS power management products beginning in early 2027. The agreement combines MPS’s proprietary process technologies with GF’s 300mm manufacturing capabilities to support higher-volume production and additional supply capacity.
Products manufactured at the Singapore facility are expected to include next-generation power solutions for automotive architectures, industrial robotics and automation, as well as smart power stages for AI and cloud infrastructure.
MPS develops power management solutions for data center, automotive, consumer and industrial applications. The company said the manufacturing agreement will provide additional scale and supply assurance as it expands in these markets.
MPS Executive Vice President of Global Operations Deming Xiao said the collaboration will combine the company’s power technology with GF’s manufacturing scale while increasing supply assurance.
GlobalFoundries Chief Manufacturing Officer Pradip Singh said the agreement demonstrates GF’s ability to transfer customer technologies to its manufacturing platform and support their transition to high-volume production.
The companies expect production from the expanded manufacturing collaboration to support customers in automotive, industrial and data center applications starting in early 2027.
Original – GlobalFoundries
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Axcelis Technologies plans to invest $35 million in a new ion implantation equipment manufacturing facility in Pyeongtaek, Gyeonggi Province, South Korea, expanding its global semiconductor equipment production capacity.
The new facility will cover approximately 200,000 square feet and is designed to support high-volume manufacturing of ion implantation systems used in front-end semiconductor production.
The Pyeongtaek site will integrate warehousing operations, Class 1,000 and Class 10,000 cleanrooms and a training center. Axcelis said the facility will use a lean production environment designed to improve manufacturing flexibility and responsiveness to customer requirements.
The investment builds on Axcelis’ existing presence in South Korea and is intended to expand the company’s manufacturing capabilities as it prepares to support growing global semiconductor demand.
Axcelis Executive Vice President of Global Operations Robert Mahoney recently participated in an Investment Declaration Ceremony in Washington, D.C., alongside representatives from South Korea’s Ministry of Trade, Industry and Resources (MOTIR) and the Korea Trade-Investment Promotion Agency (KOTRA).
A groundbreaking ceremony for the Pyeongtaek facility is scheduled for October 20, 2026. Production is expected to begin during the second half of 2028.
Original – Axcelis Technologies
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Navitas Semiconductor will begin shipments of its first U.S.-manufactured fifth-generation GaNFast devices in September 2026 through its manufacturing partnership with GlobalFoundries (GF). The devices are being produced on GF’s 200mm GaN-on-silicon manufacturing platform in Burlington, Vermont.
The production milestone follows a long-term strategic partnership announced by Navitas and GF in November 2025 to establish U.S.-based GaN manufacturing. Navitas adapted its Gen 5 GaNFast FET and power IC technology for production at GF’s Vermont facility.
The initial Gen 5 product family is expected to include 650V GaN FETs with RDS(on) ratings of 11mΩ, 18mΩ, 50mΩ, 120mΩ and 150mΩ. The first wafers are scheduled to ship in September, followed by internal samples in October and samples for strategic customers before the end of 2026.
Navitas developed its proprietary process design kits and device architectures for GF’s 200mm GaN-on-Si manufacturing process. The company’s GaNFast portfolio includes FETs and power ICs integrating functions such as power switching, drive, control, sensing and protection.
The companies are targeting the U.S.-manufactured devices at AI infrastructure, high-performance computing, industrial electrification and national security applications where high-efficiency power conversion and domestic semiconductor supply are required.
Navitas said it has more than 300 issued and pending patents across its GaN and SiC technologies. The company plans to use the GlobalFoundries manufacturing partnership for its Gen 5 GaNFast products as well as future generations of GaN devices.
The September wafer shipments represent the first production-stage output from the partnership, with the companies progressing from technology transfer and process optimization toward customer sampling and subsequent volume production.
Original – Navitas Semiconductor
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Nexperia and Aurobay Technologies, a division of Horse Powertrain, are exploring a strategic collaboration focused on advanced GaN and SiC power semiconductor solutions for automotive applications.
The companies plan to combine Nexperia’s wide-bandgap semiconductor technologies with Aurobay Technologies’ powertrain system design and integration capabilities. The evaluation will focus on how closer cooperation between semiconductor development and system integration could support future electrified and hybrid vehicle platforms.
The initiative builds on an existing collaboration in which Nexperia’s GaN devices were deployed in Aurobay Technologies’ highly integrated power generation system for range-extender applications. According to the companies, the project demonstrated improvements in efficiency, system size and weight while operating in demanding automotive environments.
Nexperia and Aurobay Technologies will now assess opportunities to optimize power electronics architectures for applications including traction inverters and power generation systems. The work is expected to include early-stage co-design and system-level optimization of power semiconductor technologies and powertrain electronics.
The collaboration will evaluate both GaN and SiC technologies as the companies seek higher efficiency, increased power density and more compact powertrain architectures. The work will also examine how semiconductor characteristics can be optimized around specific vehicle-level and powertrain requirements.
Nexperia’s Head of Business Group Wide-Bandgap, IGBTs and Modules, Edoardo Merli, said closer cooperation with Aurobay Technologies will allow the company to better understand system-level requirements and evaluate the vehicle-level benefits of GaN and SiC technologies.
Aurobay Technologies said its previous integration of Nexperia’s GaN devices demonstrated the potential of closer cooperation between semiconductor suppliers and powertrain developers. The companies will use the expanded collaboration to evaluate further improvements in efficiency, performance and packaging for future electrified propulsion systems.
Original – Nexperia
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Navitas Semiconductor has signed a definitive agreement to acquire Claros, a developer of vertical power delivery (VPD) and integrated voltage regulator (IVR) technologies for AI data centers, in a transaction valued at up to approximately $232.8 million.
The acquisition will expand Navitas’ AI power portfolio from its existing GaN and high-voltage silicon carbide technologies into processor-level power delivery. Claros develops VPD and IVR solutions designed to supply the high currents required by GPUs, CPUs, TPUs, NPUs and other AI accelerators.
Claros’ technology integrates power conversion, drive, control and passive components into compact packages that can be positioned beneath or within the processor package or printed circuit board. By reducing the distance between voltage regulation and the processor, the architecture is designed to lower impedance and board-level distribution losses while improving transient response and efficiency at sub-volt operating levels.
The technology will complement Navitas’ GaNFast GaN and GeneSiC SiC portfolio, which the company is positioning for higher-voltage stages of AI data center power architectures, including emerging 800V HVDC systems. The combination is intended to extend Navitas’ coverage across the power chain from grid-level conversion through processor-level voltage regulation.
Claros will also add capabilities in digital control, passive integration, advanced 2D and 3D packaging, and power and analog mixed-signal technologies. The company’s standalone digital and controller technologies will complement Navitas’ existing GaN product portfolio.
Navitas expects the acquisition to more than double its identified 2030 serviceable available market (SAM) to more than $8 billion. The company estimates that VPD and IVR will add at least $3.5 billion of potential market opportunity, alongside its existing $3.5 billion SAM for GaN and high-voltage/ultra-high-voltage SiC and approximately $1 billion associated with new junction field-effect transistor technology.
Navitas expects Claros’ VPD and IVR technologies to become an additional growth contributor beginning around 2028 to 2029. The company said its existing short- to mid-term financial model and Navitas 2.0 strategy remain unchanged, including its previously stated timeline toward profitability.
Under the merger agreement, Navitas will pay approximately $216 million at closing through a combination of cash and Class A common stock. Additional consideration will be paid in Navitas shares if specified business milestones are achieved during the two years following closing, bringing the total potential transaction value to approximately $232.8 million.
The stock portion of the consideration is based on Navitas’ August 21, 2026 closing share price of $12.97. Certain continuing Claros employees will also be eligible for approximately $28.9 million of performance-based equity compensation, based on the same reference share price and achievement of specified business milestones.
The boards of directors of both companies have unanimously approved the transaction. The acquisition is expected to close before the end of 2026, subject to regulatory approvals and other customary closing conditions.
Original – Navitas Semiconductor
