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Navitas Semiconductor announced a strategic partnership with Powerchip Semiconductor Manufacturing Corporation (PSMC or Powerchip), to start production and continue development of best-in-class 200mm GaN-on-silicon technology.
Navitas’ GaN IC portfolio is expected to use Powerchip’s 200mm in Fab 8B, located in Zhunan Science Park, Taiwan. The fab has been operational since 2019 and supports various high-volume manufacturing processes for GaN, ranging from micro-LEDs to RF GaN devices.
Powerchip’s capabilities include an improved 180nm CMOS process, offering smaller and more advanced geometries, which bring improvements in performance, power efficiency, integration, and cost. “200mm GaN-on-silicon production on a 180nm process node enables us to continue innovating higher power density, faster, and more efficient devices while simultaneously improving cost, scale, and manufacturing yields”, said Dr. Sid Sundaresan, SVP of WBG Technology Platforms at Navitas.
Powerchip is expected to manufacture Navitas’ GaN portfolio with voltage ratings from 100V to 650V, supporting the growing demand for GaN for 48V infrastructure, including hyper-scale AI data centers and EVs. Qualification of initial devices is expected in Q4 2025. The 100V family is expected to start production first at Powerchip in 1H26, while the company expects 650V devices will transition from Navitas’ existing supplier, TSMC, to Powerchip over the next 12-24 months.
Navitas recently made several announcements in the AI data center, EV, and solar markets, including its collaboration with NVIDIA to support GaN and SiC technologies for 800V HVDC architectures for 1 MW IT racks and beyond. Enphase announced that its next-generation IQ9 would include Navitas’ 650 V bi-directional GaNFast ICs, and Changan Automobile announced its first commercial GaN-based OBC (on-board charger) using Navitas’ GaNSafe technology.
“We are proud to partner with Powerchip to advance high-volume 200 mm GaN-on-silicon production and look forward to driving continued innovation together in the years ahead”, said Gene Sheridan, CEO and co-founder of Navitas. “Through our partnership with Powerchip, we are well-positioned to drive sustained progress in product performance, technological evolution, and cost efficiency.”
“Powerchip has collaborated with Navitas on GaN-on-Si technology for years, and we’re thrilled to announce that product qualification is nearly complete – bringing us to the verge of mass production”, said Martin Chu, President at Powerchip. “Building on this strong partnership, Powerchip is committed to expanding our cooperation and continuously supporting Navitas in exploring and growing the GaN market.”
Original – Navitas Semiconductor
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Three leading players in semiconductor research and development – the Leibniz Institute for Crystal Growth (IKZ), the PVA TePla AG, and the Siltronic AG – are combining their expertise in a pioneering project to scale up aluminum nitride (AlN) crystal growth. The project focuses on the fabrication of 4-inch AlN substrates to enable advanced applications in high-power electronics and ultraviolet photonics.
Aluminum nitride (AlN) is an ultra-wide bandgap (UWBG) semiconductor material characterized by outstanding intrinsic properties, including high critical electric field strength, superior thermal conductivity, and optical transparency in the ultraviolet spectrum. These attributes make AlN a highly promising substrate and device material for next-generation power electronic components and UV disinfection technologies, enabling compact, energy-efficient, and thermally robust device architectures.
The project’s focus on scaling AlN crystal diameters from 2 to 4 inches addresses a fundamental requirement for transitioning this key material from research-scale to industrial manufacturing environments. The project is set to make a substantial contribution to advancing Europe’s sovereignty in the field of semiconductor materials research. AlN-based power electronics enable major efficiency gains in electromobility, renewable energy, and industrial systems. In UV photonics, new opportunities arise in areas such as disinfection (preventing pandemics and water treatment), production technology (material processing), agriculture (yield enhancement), as well as sensors and medical applications.
The partners are leveraging their respective core competencies to jointly develop a market-ready technology for the industrial production of aluminum nitride crystals.
The Leibniz Institute for Crystal Growth (IKZ) brings its long-standing expertise in growing AlN crystals to the project and has a proven 2-inch AlN crystal growth platform. Thanks to its leading position in producing high-quality AlN wafers, the institute is widely acknowledged as a European reference in this field of technology.
Siltronic AG, one of the world’s leading producers of silicon wafers (using both Czochralski and Float Zone methods), contributes its extensive experience in in the research and development of substrates for power electronics and in precision metrology – both of which are crucial for the industrial application of AlN wafers.
PVA TePla AG is an internationally leading provider of high-tech solutions in the fields of material and metrology technology with decades of experience in manufacturing crystal growing systems. With its expertise in the Physical Vapor Transport (PVT) method, particularly based on comprehensive experience from the SiC market, PVA TePla provides the technological equipment foundation for a reliable and reproducible growth process for bulk AlN crystals with industry-relevant diameters. This forms a central prerequisite for scaling and industrializing AlN technology.
Through their collaboration, IKZ, PVA TePla, and Siltronic are firmly demonstrating their commitment to Europe’s technological sovereignty and the sustainable development of a semiconductor materials value chain. “The expansion from 2-inch to 4-inch is a crucial milestone in making AlN accessible for mass production”, the project partners explain. “Thanks to the synergies among the partners, we can overcome the technological barriers.”
Original – Siltronic
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Silvaco Group, Inc. announced a strategic R&D collaboration with Fraunhofer Institute for Silicon Technology (ISIT). The partnership aims to accelerate development of next-generation Gallium Nitride (GaN) devices using Silvaco’s industry-leading Power Devices Solution to perform Design Technology Co-Optimization (DTCO). This collaboration aligns with Fraunhofer ISIT’s role in the EU Chips Act initiative through its participation in the APECS pilot line (www.apecs.eu).
Fraunhofer ISIT’s Power Electronics division is at the forefront of developing and manufacturing cutting-edge device prototypes for high-performance power electronic and sensor systems. Fraunhofer ISIT will leverage Silvaco’s industry-leading design tools—including the Victory TCAD™ platform, Utmost IV™, and SmartSpice™—to perform Design Technology Co-Optimization (DTCO) for power and sensor device development. Silvaco DTCO platform will enable accelerated prototyping in Fraunhofer ISIT’s post-CMOS process environment, which is set up to explore emerging processes for both GaN and MEMS technologies on 8-inch wafers. In addition, Silvaco’s Victory Design of Experiments™ (DOE) solution will streamline development workflows and support rapid innovation during the evaluation of novel process modules and emerging device concepts.
“This collaboration marks a significant step forward in strengthening Europe’s semiconductor capabilities and driving the global evolution of GaN devices,” said Eric Guichard, Ph.D., Senior Vice President and General Manager of Silvaco’s TCAD Division. “Institutes like Fraunhofer ISIT are instrumental in pushing the boundaries of innovation in device and process technology. By collaborating with Fraunhofer ISIT, we not only accelerate their development efforts but also enhance our own TCAD tools to meet the demands of future device design.”
“We are excited to expand our GaN design capabilities with Silvaco’s Victory products,” said Michael Mensing, Ph.D., Head of the Advanced Devices Group at Fraunhofer ISIT. “By using Silvaco’s advanced TCAD solutions, our teams can explore, understand, and optimize the performance of GaN devices with greater depth and efficiency. Especially during our current development of high voltage lateral and vertical GaN devices based on engineering substrates, like Qromis® Substrate Technology, we see many physical effects that require accurately calibrated process and device models.”
In addition to the active utilization of Silvaco’s tools in R&D and industry customer projects, Fraunhofer ISIT will train students at local universities in the utilization of Silvaco’s Victory TCAD™ platform to prepare the next generation of semiconductor device engineers.
Original – Silvaco
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Renesas Electronics Corporation announced that it has entered into a Restructuring Support Agreement with Wolfspeed, Inc. and its principal creditors for the financial restructuring of Wolfspeed. As a result, Renesas expects to record a loss as described below.
1. Details of Loss
As announced in July 2023, Renesas entered into the silicon carbide wafer supply agreement with Wolfspeed, and through Renesas’ wholly owned subsidiary in the United States, it provided a deposit (the “Deposit”) of US$2 billion (approximately 292.0 billion yen) to Wolfspeed. In October 2024, Renesas and Wolfspeed amended their agreement and increased the outstanding principal amount of the Deposit to US$2.062 billion (approximately 301.1 billion yen).
Subsequently, Wolfspeed has experienced financial challenges. On May 8, 2025, during its quarterly earnings call, Wolfspeed disclosed that to achieve its stated goal of strengthening its balance sheet, it may implement a transaction through an in-court solution. Due to Wolfspeed’s contemplation of an in-court option, Wolfspeed included required going concern language in the footnotes to its financial statements for the quarterly period ended March 30, 2025.
In response to this situation, Renesas has been engaging in discussions with Wolfspeed and today entered into the Restructuring Support Agreement among Wolfspeed and its principal creditors, pursuant to which Renesas agreed to, among other things, convert the Deposit of US$2.062 billion into convertible notes, common stock, and warrants issued by Wolfspeed as follows (the “Restructuring”).
(i) Wolfspeed convertible notes: US$204 million (approximately 29.8 billion yen) in aggregate principal amount, convertible to Wolfspeed common stock, maturing in June 2031. These notes are convertible into 13.6% of Wolfspeed’s total issued shares on a non-diluted basis at the time of the completion of the Restructuring. On a fully diluted basis, and prior to the exercise of the warrants to be granted to Renesas, this corresponds to 11.8%.
(ii) Wolfspeed common stock: equivalent to 38.7% (17.9% on a fully diluted basis, prior to Renesas warrants exercise) of the total number of issued shares of Wolfspeed at the completion of the Restructuring.
(iii) Wolfspeed warrants: equivalent to 5% (on a fully diluted basis) of the total number of issued shares of Wolfspeed at the completion of the Restructuring.
The Restructuring is expected to be consummated through proceedings under Chapter 11 of the U.S. Bankruptcy Code. It is expected that Wolfspeed will file a petition with the court to initiate such proceedings in the near future. The Restructuring is expected to become effective by the end of September 2025, subject to court approval of the restructuring plan. If the necessary regulatory approvals have not been obtained by the time the Restructuring takes effect, Renesas will hold rights to instruments with equivalent economic value to Wolfspeed’s convertible notes, common stock, and warrants until those approvals are received.
In connection with the signing of the Restructuring Support Agreement, Renesas expects to record a loss on the deposited receivables related to the Deposit in its consolidated financial statements. Although the timing and amount of such loss have not been determined at this time, Renesas believes that there is a possibility of recording a loss of approximately 250 billion yen (converted at an average exchange rate of 150 yen to the dollar during the period) in the consolidated financial statements for the six months ending June 30, 2025. Please note that this amount is an estimate calculated by Renesas’ internal analysis based on the currently available information and may increase or decrease due to various factors. The definitive timing and amount of the loss to be recorded will be determined in consultation with Renesas’ auditor and will be announced once it is determined.
2. Future Outlook
Renesas discloses revenue, gross margin, and operating margin on a “Non-GAAP” basis and does not disclose a forecast for profit attributable to owners of parent. Therefore, there is no change to the forecast for the six months ending June 30, 2025, announced on April 24, 2025.
Original – Renesas Electronics
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Wolfspeed, Inc. announced that, as part of its efforts to proactively strengthen its capital structure, it entered into a Restructuring Support Agreement (the “RSA”) with key lenders, including (i) holders of more than 97% of its senior secured notes, (ii) Renesas Electronics Corporation’s wholly owned U.S. subsidiary and (iii) convertible debtholders holding more than 67% of the outstanding convertible notes. The transactions envisioned by the RSA are expected to reduce the Company’s overall debt by approximately 70%, representing a reduction of approximately $4.6 billion, and reduce the Company’s annual total cash interest payments by approximately 60%.
By taking this proactive step, the Company expects to be better positioned to execute on its long-term growth strategy and accelerate its path to profitability. This marks the positive culmination of discussions between the Company and key lenders to restructure the Company’s capital structure on an expedited basis and help to ensure Wolfspeed maintains its position as a leader in the silicon carbide market.
“After evaluating potential options to strengthen our balance sheet and right-size our capital structure, we have decided to take this strategic step because we believe it will put Wolfspeed in the best position possible for the future,” said Robert Feurle, Wolfspeed’s Chief Executive Officer. “Wolfspeed has tremendous core strengths and great potential. We are a global leader in silicon carbide technology with an exceptional, purpose-built, fully automated 200mm manufacturing footprint, delivering cutting-edge products for our customers. A stronger financial foundation will enable us to focus acutely on innovation in rapidly scaling verticals undergoing electrification where quality, durability and efficiency matter most.”
Feurle continued, “As we move forward, we are grateful for the confidence and support of key lenders, who share our vision for the future and believe in our growth prospects. I also want to thank our incredibly talented team for their resilience and hard work, and our customers and partners for their ongoing support.”
Additional Information Regarding the RSA
Key terms of the RSA are as follows:
- Pursuant to the transactions contemplated by the RSA, the Company will receive $275 million of new financing in the form of second lien convertible notes, fully backstopped by certain of its existing convertible debtholders.
- The RSA contemplates a paydown of its senior secured notes of $250 million at a rate of 109.875%, with certain modifications to reduce go-forward cash interest and minimum liquidity requirements.
- The RSA also contemplates an exchange of $5.2 billion of existing convertible notes and Renesas’ existing loan for $500 million of new notes and 95% of the new common equity, subject to dilution from other equity issuances, with Renesas loan claims entitled to additional incremental consideration to the extent certain regulatory approvals are not obtained by an agreed upon deadline.
- Pursuant to the transactions, existing equity will be cancelled, and the existing equity holders will receive their pro rata share of 3% or 5% of new common equity, subject to dilution from other equity issuances and potential reduction from certain events.
- All other unsecured creditors are expected to be paid in the ordinary course of business.
To implement the transactions envisioned by the RSA, the Company intends to solicit approval of the pre- packaged plan of reorganization and then file voluntary petitions for reorganization under Chapter 11 of the U.S. Bankruptcy Code in the near future. Wolfspeed expects to move through this process expeditiously and emerge by the end of third quarter calendar year 2025.
Wolfspeed is continuing to operate and serve customers with leading silicon carbide materials and devices throughout the process. The Company plans to continue to pay vendors in the ordinary course of business for goods and services delivered throughout the restructuring process via an All-Trade Motion. Vendors are expected to be unimpaired in the process. Wolfspeed also intends to file customary motions with the Bankruptcy Court to support ordinary-course operations including, but not limited to, continuing employee compensation and benefits programs.
Additional details regarding the RSA will be provided in the Company’s Form 8-K to be filed with the U.S. Securities and Exchange Commission (the “SEC”). This press release does not constitute an offer to sell or purchase any securities, which would be made only pursuant to definitive documents and an applicable exemption from the Securities Act of 1933, as amended. This press release does not constitute a solicitation to vote on the bankruptcy plan.
For additional information regarding the restructuring, please visit Wolfspeed’s dedicated microsite at wolfspeedforward.com.
Original – Wolfspeed
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In its journey towards spinning off as the independent company Aumovio, the Continental group sector Automotive has taken a strategic step to increase resilience and ensure future success with the establishment of an Advanced Electronics & Semiconductor Solutions (AESS) organization. This new organization has been established to design and verify automotive semiconductors with a view of fulfilling internal demand. As a strategic move, GlobalFoundries (GF) has been onboarded as the manufacturing partner for this organization.
The Automotive industry’s demand for semiconductors to enhance electronic content for Software-defined Vehicles is increasing. The global automotive semiconductor market is estimated to reach about 110 billion Euros by 2032, and therefore, it is imperative for organizations to invest in semiconductor development to be successful in the long run.
“Continental is committed to sustainable growth and the Automotive group sector is on the right path to success. To ensure future success of the group sector, we have decided to develop semiconductors internally. The creation of this fabless semiconductor organization will strengthen Continental’s position not only by reducing geopolitical risks but also by the way of becoming more self-reliant in this field,” said Philipp von Hirschheydt, member of the Continental Executive Board and CEO of the future Aumovio.
AESS will design and verify semiconductors internally while the production line will be established with GF to exclusively manufacture these semiconductors for the organization. GF is a leading manufacturer of essential semiconductors that the world relies on to live, work and connect. With a global manufacturing footprint across the US, Europe and Asia, GlobalFoundries delivers power-efficient, high-performance solutions for several industries including Automotive, Internet of Things, communications infrastructure, smart mobile and other high-growth markets.
“GF is proud to support Continental and the launch of their AESS organization as we partner together to deliver advanced semiconductor solutions to meet the growing demand for software-defined vehicles,” said Niels Anderskouv, president and chief operating officer at GF. “Our silicon-proven portfolio of automotive-qualified process technologies, supported by our resilient global footprint and track record of manufacturing excellence, will enable Continental to deliver innovative solutions for the next generation of safe, connected and autonomous vehicles. We are excited to see the Automotive semiconductor supply chain continue to evolve and want to congratulate the Continental team on shaping that evolution with the establishment of this organization.”
“In the evolving automotive landscape, it is imperative for organizations to invest in technology, particularly in essential areas like semiconductors. The formation of this new entity, in collaboration with a dependable manufacturing partner such as GlobalFoundries, will empower us to develop innovative products and solutions successfully,” said Nino Romano, CTO Continental Automotive.
The establishment of this organization aligns with the Automotive Board’s long-term strategy to invest in technology and increase self-sufficiency. This initiative seeks to improve Automotive’s market presence and autonomy by building the capability to design and manage semiconductor production in partnership with leading semiconductor manufacturers.
The new organization supports the Automotive group sector in various ways. This initiative aims to establish a resilient supply chain, improve product quality, and reduce time to market. The organization has the potential to create value by generating savings and efficiencies. Additionally, it is expected to enhance the company’s cash flow through anticipated savings.
As part of the Operations and Technology organization, the AESS organization will help to strengthen Automotive’s position as an automobile component manufacturer. With a strong organizational structure and a streamlined setup, AESS is creating new internal development opportunities and laying the foundation for future growth in a dynamic market environment.
Original – Continental
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Texas Instruments announced its plans to invest more than $60 billion across seven U.S. semiconductor fabs, making this the largest investment in foundational semiconductor manufacturing in U.S. history. Working with the Trump administration and building on the company’s nearly 100-year legacy, TI is expanding its U.S. manufacturing capacity to supply the growing need for semiconductors that will advance critical innovations from vehicles to smartphones to data centers. Combined, TI’s new manufacturing mega-sites in Texas and Utah will support more than 60,000 U.S. jobs.
“TI is building dependable, low-cost 300mm capacity at scale to deliver the analog and embedded processing chips that are vital for nearly every type of electronic system,” said Haviv Ilan, president and CEO of Texas Instruments. “Leading U.S. companies such as Apple, Ford, Medtronic, NVIDIA and SpaceX rely on TI’s world-class technology and manufacturing expertise, and we are honored to work alongside them and the U.S. government to unleash what’s next in American innovation.”
“For nearly a century, Texas Instruments has been a bedrock American company driving innovation in technology and manufacturing,” said U.S. Secretary of Commerce, Howard Lutnick. “President Trump has made it a priority to increase semiconductor manufacturing in America – including these foundational semiconductors that go into the electronics that people use every day. Our partnership with TI will support U.S. chip manufacturing for decades to come.”
Unleashing what’s next in American innovation
Today, TI is the largest foundational semiconductor manufacturer in the U.S., producing analog and embedded processing chips that are critical for smartphones, vehicles, data centers, satellites and nearly every other electronic device. In order to meet the steadily growing demand for these essential chips, TI is building on its legacy of technology leadership and expanding its U.S. manufacturing presence to help its customers pioneer the next wave of technological breakthroughs.
Igniting intelligence with Apple
“Texas Instruments’ American-made chips help bring Apple products to life, and together, we’ll continue to create opportunity, drive innovation, and invest in the future of advanced manufacturing across the U.S.,” said Apple’s CEO Tim Cook.
Fueling the future with Ford
Ford and TI are working to strengthen American manufacturing, combining Ford’s automotive expertise with TI’s semiconductor technology to help drive innovation and secure a robust, domestic supply chain for the future of mobility. “At Ford, 80% of the vehicles we sell in the U.S. are assembled in the U.S., and we are proud to stand with technology leaders like TI that continue to invest in manufacturing in the U.S.,” said Jim Farley, President and CEO of Ford Motor Company.
Connecting patient care with Medtronic
Medtronic and TI are partnering to improve lives when it matters most. “At Medtronic, our life-saving medical technologies rely on semiconductors to deliver precision, performance, and innovation at scale,” said Geoff Martha, Medtronic chairman and CEO. “Texas Instruments has been a vital partner – especially during the global chip shortages – helping us maintain supply continuity and accelerate the development of breakthrough therapies. We’re proud to leverage TI’s U.S.-manufactured semiconductors as we work to transform healthcare and improve outcomes for patients around the world.”
Advancing AI with NVIDIA
NVIDIA is partnering with TI to unleash the next generation of artificial intelligence architectures. “NVIDIA and TI share the goal to revitalize U.S. manufacturing by building more of the infrastructure for AI factories here in the U.S.,” said Jensen Huang, founder and CEO of NVIDIA. “We look forward to continuing our collaboration with TI by developing products for advanced AI infrastructure.”
Securing high-speed satellite internet with SpaceX
SpaceX is increasingly leveraging TI’s high-speed process technology to connect its Starlink satellite internet service with TI’s latest 300mm SiGe technology manufactured in Sherman, Texas. “Our fundamental mission is to revolutionize global connectivity and eliminate the digital divide. Core to this mission is constantly pushing the boundaries of what is possible,” said Gwynne Shotwell, president and COO of SpaceX. “SpaceX is manufacturing tens of thousands of Starlink kits a day – all right here in the U.S. – and we are making huge investments in PCB manufacturing and silicon packaging to expand even further. TI’s U.S.-made semiconductors are crucial for securing a U.S. supply chain for our products, and their advanced silicon manufacturing capabilities provide the performance and reliability needed to help us meet the growing demand for high-speed internet all around the world.”
Backed by the strength of TI’s U.S. manufacturing presence
TI is a driving force behind the return and expansion of semiconductor manufacturing in the U.S. The company’s more than $60 billion investment in U.S. manufacturing includes building and ramping seven, large-scale, connected fabs. Combined, these fabs across three manufacturing mega-sites in Texas and Utah will manufacture hundreds of millions of U.S.-made chips daily that will ignite a bold new chapter in American innovation.
- Sherman, Texas: SM1, TI’s first new fab in Sherman will begin initial production this year, just three years after breaking ground. Construction is also complete on the exterior shell of SM2, TI’s second new fab in Sherman. Incremental investment plans include two additional fabs, SM3 and SM4, to support future demand.
- Richardson, Texas: TI’s second fab in Richardson, RFAB2, continues to ramp to full production and builds on the company’s legacy of introducing the world’s first 300mm analog fab, RFAB1, in 2011.
- Lehi, Utah: TI is ramping LFAB1, the company’s first 300mm wafer fab in Lehi. Construction is also well underway on LFAB2, TI’s second Lehi fab that will connect to LFAB1.
Original – Texas Instruments
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A pan-European consortium dedicated to developing sustainable processes and technologies for the semiconductor-manufacturing industry today announced the launch of the GENESIS project. This integrated, large-scale initiative aims to enable Europe’s chip industry to meet its sustainability goals—from materials development to final waste treatment.
Coordinated by CEA-Leti, the three-year project brings together 58 partners spanning the entire European semiconductor value chain, from large enterprises and SMEs to research institutes, universities, and industry associations. GENESIS will drive innovative solutions in emission control, eco-friendly materials such as alternatives to PFAS-based ones, waste minimization, and raw material reuse, directly aligned with the European Green Deal and European Chips Act.
“GENESIS is designed to address the complex challenges of building a truly sustainable semiconductor ecosystem,” said Laurent Pain, Sustainable Electronics Program director at CEA-Leti. “Its structure reflects both the urgency and the opportunity of Europe’s green transition, powered by the complementary expertise and close collaboration of its partners.”
Pain, manager of the project, noted that the team expects to deliver approximately 45 sustainability-driven innovations covering the semiconductor lifecycle, guided by four strategic pillars that form the technological foundation of GENESIS’s vision for a green European semiconductor industry:
- Pillar 1 – Monitoring & Sensing: Real-time emissions tracking, traceability, and process feedback systems,
- Pillar 2 – New Materials: PFAS-free chemistries and low-GWP alternatives for advanced semiconductor processes,
- Pillar 3 – Waste Minimization: Innovations in recycling (solvent, gas, slurries), reuse, and sustainable replacements, and
- Pillar 4 – Critical Raw Materials Mitigation: Strategies to reduce dependency on CRM and strengthen resource security.
Complimenting these pillars, the project’s objectives establish an overall framework that includes deploying sensor-integrated abatement systems to reduce PFAS and GHG emissions. It also aims to position Europe as a leader in green semiconductor innovation by aligning supply-chain practices with environmental regulations.
“The launch of the GENESIS project marks a critical step toward aligning Europe’s semiconductor ambitions with its climate commitments,” said Anton Chichkov, head of programs at Chips Joint Undertaking (Chips JU), a public-private partnership created to bolster Europe’s semiconductor industry by fostering collaboration between the EU, member states, and the private sector.
“As chips become the backbone of everything from AI to energy systems, their environmental footprint is rapidly growing,” he said. “GENESIS responds to this urgent challenge by pioneering sustainable alternatives in materials, waste reduction, and resource efficiency. Through this initiative, Europe is not only investing in cleaner technologies—it’s positioning itself as a global leader in green semiconductor manufacturing.”
With a budget of close to €55 million, the GENESIS project is co-funded through the Chips Joint Undertaking by the European Commission, participating EU member states, and the Swiss State Secretariat for Education, Research and Innovation (SERI).
Original – CEA-Leti
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Ather Energy, a leading electric two-wheeler manufacturer in India and Infineon Technologies Asia Pacific Pte Ltd, a global leader in semiconductor solutions, signed a Memorandum of Understanding (MoU) in Seoul, South Korea, to jointly drive innovation in the electric vehicle (EV) industry in India. The collaboration focuses on advancing semiconductor technologies to support light electric vehicles (LEVs), charging infrastructure, and safety, with a shared vision to contribute to India’s growing EV ecosystem.
The partnership aims to leverage cutting-edge semiconductor solutions from Infineon based on various technologies, microcontrollers and automotive related sensors, alongside Ather’s expertise in designing state-of-the-art LEVs (Light Electric Vehicles). Together, the companies will work towards enabling more efficient, reliable, and cost-effective EV solutions, driving the adoption of electric two-wheelers in India.
Speaking on the occasion, Swapnil Jain, Executive Director and CTO, Ather Energy, said: “At Ather, we’ve always believed that building great EVs starts with getting the fundamentals right – performance, efficiency, reliability. Our approach has always been grounded in first-principles thinking and deep engineering, questioning how every system can be made better, faster, and more efficient. That’s where semiconductor innovation becomes critical. Infineon’s leadership in semiconductors and system solutions brings deep expertise that aligns with our engineering-first approach. Our partnership with Infineon gives us access to advanced technologies that can help us improve key systems, from charging to safety and explore ways to reduce system complexity and cost. We’re looking forward to seeing how this collaboration can help us push the boundaries, not just for our products, but for the larger EV ecosystem in India.”
Highlighting the importance of this partnership, Peter Schaefer, Executive Vice President and Chief Sales Officer Automotive at Infineon, said: “India is one of the fastest-growing EV markets globally, and electric two-wheelers are at the heart of this transformation. We are thrilled to partner with Ather Energy to enable the next generation of sustainable mobility solutions. Our advanced SiC and GaN technologies will help drive energy-efficient and high-performance electric vehicles. This partnership will foster innovation that contributes meaningfully to India’s ambitious objective to reach a 30 percent sales share for EVs by 2030.”
This collaboration will explore sensing and safety innovations to elevate vehicle safety and user experience. These solutions deliver significant advantages in terms of energy efficiency, charging speed, and overall system reliability, making EVs more accessible, sustainable, convenient and appealing to consumers.
Original – Infineon Technologies
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On May 15, GlobalWafers Co., Ltd. hosted U.S. Investment Accelerator Executive Director Michael Grimes, Taiwan Minister of Economic Affairs Kuo Jyh-huei, AIT Director Raymond Greene, ROC Taiwan’s Representative to the United States Alexander Yui, Sherman Mayor Shawn Teamann, and hundreds of customers, suppliers, and partners in Sherman, Texas to celebrate the Grand Opening of GlobalWafers America (GWA), the company’s newest and most advanced 300mm silicon wafer manufacturing facility.
GlobalWafers made the decision to build its flagship facility in the United States in May 2022 and held the groundbreaking ceremony in Sherman on December 2, 2022. To date, the US$3.5 billion project has created 1200 construction and 180 permanent jobs in North Texas and will employ up to 650 engineering, technical and operational professionals by the end of 2028.
During the celebration Chairperson Doris Hsu unexpectedly announced the company’s plan to further grow its U.S. manufacturing base, stating: “On the three-year anniversary of our decision to build GWA, I am pleased to announce GlobalWafers’ intention to expand our current U.S. investment by another $4 billion to reach $7.5 billion!” In alignment with growth in market demand- combined with an advantageous tariff structure favoring cost effective U.S. expansion- GlobalWafers expects to add phases 3 and 4 to its existing commitment in Sherman. As the only advanced wafer supplier manufacturing in the United States, this additional investment, bolstered by ongoing support from the U.S. Government and the Trump Administration, is expected to fully secure the advanced wafer supply needed to power a broad range of next-generation technologies and innovation.
On this point, GWC President Mark England noted: “GWA will fill a key vulnerability in the U.S. supply chain and help build a more complete and self-sufficient local semiconductor ecosystem — one that is more resilient and future-ready.” In fact, GWA is the only fully integrated advanced silicon wafer manufacturing facility participating in the U.S. Government’s CHIPS for America Program and is the first production line of its kind built in the United States in over 20 years.
Under the CHIPS Program- now part of President Trump’s new U.S. Investment Accelerator- the U.S. Department of Commerce is investing US$406 million in GlobalWafers’ new U.S. operations in a strategy to rebuild a key node of the U.S. semiconductor supply chain. At the event, U.S. Investment Accelerator Executive Director Michael Grimes observed: “GlobalWafers investment is a great example of the return of United States manufacturing in a critical industry. President Trump and Secretary Lutnick have made it a fundamental objective to bring semiconductor manufacturing home to America. Through our work with GWA, we are ensuring that the essential starting material for advanced chips is manufactured right here in United States. GlobalWafers current investment, together with its new commitment announced today, will secure U.S. wafer supply for generations to come.”
The City of Sherman, Grayson County, and the State of Texas have also provided important incentives in the form of land, direct grants, tax incentives and excellent manufacturing infrastructure. Chairperson Doris Hsu noted, “There is simply not a more welcoming location in all the United States for doing business than Texas, Grayson County and Sherman. They have worked strategically to build the Silicon Prairie and GWA is thrilled to be part of it.” Governor Greg Abbott remarked, “We are proud that GlobalWafers America is now calling Texas home. GWA is rounding out the already well-established Texas semiconductor ecosystem, setting Texas apart as the only state in the country with advanced silicon wafers.”
From construction to production, GlobalWafers has partnered with hundreds of best-in-class suppliers who have also brought advanced engineering systems, technology and business processes to the project. “Without construction partners, toolmakers and materials suppliers also pushing the edge of their capabilities, GWA would not be able to deliver the quality wafers our customers have come to expect from GlobalWafers,” said GWA VP of Operations Wyatt Watson. “The GWA project has brought out the best of our entire supply chain.”
GlobalWafers is one of five global suppliers of advanced semiconductor wafers and the only one expanding in the United States during this new era of supply chain regionalization. Along these lines, Ashlie Wallace, GlobalFoundries’ SVP of Global Supply Chain, echoed the sentiment of many customers noting, “As a longstanding strategic partner, we are pleased to see GlobalWafers increasing domestic supply of silicon wafers critical to the essential semiconductors we manufacture.”
300mm silicon wafers are the essential input used by foundries and integrated device manufacturers to produce leading-edge, mature-node, and memory chips. Silicon from GWC’s semiconductor wafers is found in essentially every device that powers modern life– from home appliances, automobiles and physical infrastructure to cell phones, computers, and AI applications.
Further to the strategic phase 3 & 4 expansion announced today, GWA’s new 142-acre campus in Sherman— designed to accommodate up to six phases — has space to add two additional phases and significantly grow capacity in lockstep with chip producers who have collectively announced over US$500 billion in new U.S. investments over the next decade.
As part of our core ESG commitment, GlobalWafers companies worldwide practice green manufacturing. Once fully ramped, GWA will run on 100% renewable energy to produce the world’s most advanced silicon wafers. Across the GlobalWafers family, we remain deeply committed to minimizing our environmental impact while enabling the next generation of semiconductor innovation.
GlobalWafers Co., Ltd., the world’s third largest supplier of semiconductor wafers, maintains 18 manufacturing and operational sites spanning three continents and nine countries. The company is one of the global leaders in semiconductor technology, providing innovative and advanced technology solutions to leading chip manufacturers to transform lives around the world.
Original – GlobalWafers
