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Navitas Semiconductor announced two new package options for its 5th generation GeneSiC silicon carbide MOSFET platform, introducing a top-side cooled QDPAK package and a low-profile TO-247-4L package with asymmetrical leads. The new devices target applications requiring high power density and improved thermal performance, including AI data centers and energy infrastructure systems.
The devices are based on the company’s fifth-generation trench-assisted planar silicon carbide MOSFET technology. This architecture delivers a 35% improvement in the RDS(on) multiplied by gate-drain charge figure of merit and approximately a 25% improvement in the gate-drain to gate-source charge ratio. Combined with a stable gate threshold voltage greater than 3 V, the design helps prevent parasitic turn-on and enables predictable switching behavior in high-power systems.
The new QDPAK package features a top-side cooling structure designed to address thermal limitations of traditional PCB-based cooling approaches. Heat is transferred directly through the top of the package to a heatsink, improving thermal efficiency and enabling smaller system footprints. The package also reduces parasitic inductance, supporting cleaner switching at high frequencies. It provides a compact footprint of approximately 15 mm by 21 mm with a height of 2.3 mm and includes design features that extend creepage distance while supporting applications up to 1000 VRMS.
Navitas also introduced a low-profile TO-247-4L through-hole package designed for systems where vertical space is constrained. By reducing the height of the package on the PCB, the design enables higher power density compared with conventional TO-247-4 packages. The device also incorporates asymmetrical leads, including thinner leads for the gate and Kelvin-source connections, to improve manufacturing tolerances during PCB assembly.
The new packaging options are intended for applications such as AI data center power supplies and high-performance power conversion systems where compact form factors and efficient thermal management are essential.
The initial products include four 1200 V SiC MOSFETs with on-resistance values of 6.5 mΩ and 12 mΩ, offered in both QDPAK and TO-247-4L packages. Samples are available for customer evaluation.
Original – Navitas Semiconductor
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Wolfspeed announced that its 300 mm silicon carbide technology platform could become a key materials foundation for advanced heterogeneous packaging used in AI and high-performance computing systems by the end of the decade.
The initiative builds on the company’s January 2026 milestone of producing a single-crystal 300 mm SiC wafer. Wolfspeed is now working with partners across the AI ecosystem to evaluate how large-diameter silicon carbide substrates could help address emerging performance limitations in next-generation semiconductor packaging.
As AI workloads increase, semiconductor packages are growing in size, power density, and integration complexity. These trends are pushing conventional materials used in advanced packaging toward their thermal, mechanical, and electrical limits. Wolfspeed believes silicon carbide can help address these challenges because of its high thermal conductivity, mechanical robustness, and favorable electrical characteristics.
Using a 300 mm SiC wafer format also aligns with the existing semiconductor manufacturing infrastructure used for advanced silicon devices. This compatibility allows potential integration with current wafer-level packaging processes and fabrication tools while supporting scalable high-volume manufacturing.
The company is collaborating with foundries, outsourced semiconductor assembly and test providers, system architects, and research institutions to study the feasibility of silicon carbide interposers and related packaging components. The program aims to evaluate performance benefits, reliability, and integration pathways for hybrid silicon–silicon carbide packaging architectures.
According to Wolfspeed, the larger 300 mm wafer format could enable fabrication of larger interposers and heat spreaders required for increasingly large and complex semiconductor packages used in AI and HPC systems. The approach is intended to support the industry’s transition toward higher integration levels while maintaining manufacturability and ecosystem compatibility.
Original – Wolfspeed
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Micro Commercial Components (MCC) has expanded its power semiconductor portfolio with the Gen5 silicon carbide Schottky diode series, a family of high-current 650 V SiC Schottky barrier diodes designed for low conduction losses, fast switching, and reliable operation under demanding electrical and thermal conditions.
Built on merged PiN Schottky (MPS) technology and packaged in the industry-standard D2-PAK format, the devices support compact high-power system designs while enabling efficient heat dissipation. The diodes are optimized for high-efficiency power conversion systems and combine a low forward voltage drop of approximately 1.3 V, near-zero reverse recovery behavior, and a maximum junction temperature of 175 °C.
These characteristics help reduce switching losses, increase power density, and simplify thermal management in applications such as power factor correction stages, industrial power supplies, renewable energy inverters, and high-current rectification circuits.
The series includes the SICB2065XG5M device and the automotive-qualified SICB2065XG5MQ variant, which complies with AEC-Q101 standards. With high current capability of up to 86 A, high-speed switching performance, and a positive temperature coefficient that helps prevent thermal runaway, the devices are designed to support efficient and stable operation even under high load and elevated temperature conditions.
According to MCC, the Gen5 SiC Schottky diode family enables designers to achieve higher efficiency and reliability targets while reducing electromagnetic interference and supporting compact system architectures in high-power applications.
Original – Micro Commercial Components
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Infineon Technologies AG announced that Chicony Power has selected its CoolGaN Transistors G5 to power multiple laptop adapters developed for a leading notebook manufacturer.
The design highlights how gallium nitride power semiconductors are enabling more compact and energy-efficient charging solutions. By using GaN technology, the new adapters can achieve smaller form factors while improving efficiency and sustainability for mainstream computing devices.
At the core of the adapter design are Infineon’s CoolGaN Transistors G5, optimized for fast switching and low conduction losses across a wide range of operating conditions. The devices are based on Infineon’s hybrid-drain gate injection transistor architecture, designed to deliver robust high-voltage gate operation, improved dynamic on-resistance performance, and higher saturation current to support reliable operation.
Compared with the previous generation, the G5 transistors deliver up to 30% improved performance in key figures of merit such as RDS(on) multiplied by gate charge. These improvements support higher efficiency and greater power density in compact adapter designs.
The adapter platform developed by Chicony Power incorporates high-frequency power architectures with optimized power factor correction and DC/DC conversion stages that leverage the fast switching capability of GaN devices. The design also includes EMI-optimized layouts and filtering to reduce electrical noise while maintaining strong compliance margins. Thermal optimization allows sustained power delivery in the 100 W to 300 W range while maintaining compact mechanical designs.
Infineon stated that it continues to expand its GaN portfolio, announcing more than 40 GaN products over the past year. The company is also progressing with scalable GaN manufacturing on 300-millimeter wafers, with initial samples already shipped to customers. According to Infineon, 300 mm GaN production will enable higher manufacturing capacity and faster delivery of GaN products as demand for high-efficiency power electronics grows.
Original – Infineon Technologies
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Wolfspeed announced the commercial availability of the industry’s first 10 kV silicon carbide power MOSFET, a development aimed at advancing high-voltage power conversion for grid infrastructure, industrial electrification, and AI data center applications.
The new device introduces silicon carbide capability at the 10 kV level, enabling new system architectures for high-voltage power electronics. According to the company, the technology supports improvements in system efficiency, reliability, and design flexibility for applications such as solid-state transformers, wind power systems, and medium-voltage uninterruptible power supplies.
The device also demonstrates high durability. Intrinsic time-dependent dielectric breakdown lifetime analysis indicates a projected operating lifetime of approximately 158,000 years at a continuous 20 V gate bias voltage. Wolfspeed stated that the technology also addresses bipolar degradation challenges that have historically affected 10 kV SiC MOSFETs, enabling reliable body diode operation required in many high-power systems.
The availability of 10 kV silicon carbide devices allows designers to simplify system architectures and reduce component counts. According to Wolfspeed, systems using the technology can reduce overall system cost by about 30% by enabling simpler inverter topologies and fewer power conversion stages. Power density improvements exceeding 300% are possible through higher switching frequencies, increasing from about 600 Hz to 10,000 Hz, which allows smaller magnetics and simplified gate drive and control circuits. The technology can also reduce system-level thermal requirements by up to 50% due to conversion efficiencies approaching 99%.
The fast switching capability of the device, with rise times below 10 nanoseconds, also enables solid-state switching solutions to replace conventional mechanical spark-gap switches in pulsed-power systems. These solid-state devices eliminate arcing, improve timing precision, and reduce maintenance requirements. Potential applications include geothermal power systems, semiconductor plasma etching, pulsed power for AI data centers, and sustainable fertilizer production.
The device, designated CPM3-10000-0300A, is currently available as a bare die for customer sampling and qualification. Wolfspeed stated that the commercialization of the 10 kV SiC MOSFET builds on nearly three decades of development in crystal growth, epitaxy, and high-voltage device manufacturing and enables customers to move prototype designs at this voltage level into production.
Original – Wolfspeed
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Micro Commercial Components (MCC) has introduced the SICWT40120G6M, a 1200 V silicon carbide Schottky diode designed to address switching losses, thermal stress, and reliability challenges in high-voltage, high-frequency power conversion systems.
Traditional rectifier solutions can increase power dissipation, require larger cooling solutions, and limit achievable power density, particularly in high-current and high-temperature environments. The new device is intended to improve efficiency and reliability in these demanding operating conditions.
The SICWT40120G6M is built on merged PiN Schottky (MPS) technology, enabling zero reverse recovery behavior along with low forward voltage and very low leakage current. These characteristics significantly reduce switching and conduction losses in high-frequency power conversion applications.
The diode supports high continuous and surge current capability and operates across a wide junction temperature range from −55°C to +175°C. A positive temperature coefficient helps maintain stable operation and reduces the risk of thermal runaway in high-power systems.
The device is packaged in a TO-247AD package designed for strong thermal performance, supporting efficient heat dissipation and enabling more compact and reliable system designs.
According to MCC, the new SiC diode targets applications including industrial power conversion, transportation systems, and EV charging infrastructure, where high efficiency, thermal robustness, and compact design are critical requirements.
Original – Micro Commercial Components
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Navitas Semiconductor and École Polytechnique Fédérale de Lausanne announced the exhibition of a 250 kW solid-state transformer (SST) solution at APEC 2026 in San Antonio, Texas.
The SST platform was developed by EPFL’s Power Electronics Laboratory and is designed to support the grid architecture required by next-generation data centers. The system replaces bulky low-frequency transformers while improving end-to-end efficiency. The design uses a single-stage, modularized bridge rectifier SST topology to convert 3.3 kV AC to 800 V DC at 250 kW power, enabling improved performance and modularity for modern data center infrastructure.
The demonstrator is built using Navitas GeneSiC ultra-high voltage 3300 V and high-voltage 1200 V silicon carbide trench-assisted planar MOSFETs and modules. The project is part of the Power Electronics Laboratory’s HeatingBits initiative, which aims to deploy and evaluate advanced power technologies inside EPFL’s operational data center.
According to Navitas, the collaboration demonstrates how medium-voltage power conversion can address the energy and thermal challenges associated with AI data centers. By combining high-voltage silicon carbide devices with a single-stage solid-state transformer architecture and advanced real-time control, the system enables scalable 800 V DC power distribution designed to improve efficiency from the grid to server racks while also supporting potential heat reuse.
EPFL researchers highlighted that the SST platform provides a galvanically isolated, scalable, and efficient interface between the medium-voltage AC grid and an 800 V DC data center architecture. The system also serves as a real-world experimental platform for advanced distributed control methods.
The Applied Power Electronics Conference (APEC) takes place from March 22 to 26 in San Antonio, Texas, where representatives from both Navitas and EPFL’s Power Electronics Laboratory will present the demonstrator at the Navitas booth.
Original – Navitas Semiconductor
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Novel Crystal Technology, Inc. will begin shipping 150 mm (6-inch) β-Ga₂O₃ (gallium oxide) substrate samples in March 2026. The company said the milestone represents a key step toward large-scale industrial adoption of next-generation high-voltage power devices.
β-Ga₂O₃ features a bandgap energy exceeding that of silicon carbide (SiC) and gallium nitride (GaN), enabling higher breakdown voltage, lower energy loss and greater device miniaturization. The substrates are produced using a melt growth method, which the company said offers a combination of high performance and scalability suited to applications such as railways, industrial systems and electric power infrastructure.
Global demand for high-voltage, high-power devices is rising due to electrification across industrial and transportation sectors and the expansion of AI data centers. While β-Ga₂O₃ wafers have previously been limited to 100 mm (4-inch) R&D use, transitioning to 150 mm aligns the material with standard production lines. Novel Crystal Technology said this shift will support ecosystem development and pave the way for mass production of 150 mm β-Ga₂O₃ epi-wafers targeted for 2029.
Key Product Features
- EFG Growth Technology: The company leverages experience with the EFG method used for 100 mm β-Ga₂O₃ substrates to ensure quality and supply stability at 150 mm.
- Industry-Standard Compatibility: The 150 mm diameter matches existing power device production lines, supporting commercialization efforts.
- Development Enablement: Early supply of high-quality monocrystalline substrates allows partners to advance epitaxial growth and device process development ahead of large-scale production.
To improve cost competitiveness, the company is developing its DG Method, a growth technology designed to eliminate the need for expensive precious-metal crucibles. Novel Crystal Technology said this approach is expected to enable pricing that surpasses SiC in cost competitiveness.
Strategic Timeline:
- 2027: Launch of 150 mm β-Ga₂O₃ epi-wafer samples
- 2029: Full-scale mass production of 150 mm β-Ga₂O₃ epi-wafers using the DG Method
- 2035: Targeted supply of 200 mm (8-inch) β-Ga₂O₃ substrates
Original – Novel Crystal Technology
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Navitas Semiconductor will present its latest GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power technologies at APEC 2026, booth #2027, in San Antonio, Texas, from March 22–26.
The company will highlight solutions targeting AI data centers, performance computing, grid and energy infrastructure, and industrial electrification.
Navitas will unveil a 10 kW ‘GaN-powered’ 800 V–to–50 V DC-DC platform, designed for next-generation AI data centers.
Key features include:
- Advanced 650 V and 100 V GaNFast FETs
- Three-level half-bridge architecture with synchronous rectification
- 98.5% peak efficiency
- 2.1 kW/in³ power density
- Support for both 800 V and ±400 VDC AI data center architectures
In addition, Navitas will showcase:
- A 12 kW AI data center power supply using IntelliWeave™ digital control
- An 8.5 kW OCP power supply
- A 4.5 kW CRPS power supply
For next-generation solid-state transformer (SST) applications, Navitas will present its SiCPAK™ power module portfolio, designed for high-efficiency (>98%) conversion from medium-voltage grids (13.8 kVAC to 34.5 kVAC) to 800 VDC or 1500 VDC.
The lineup includes:
- 3300 V ultra-high-voltage (UHV) SiC modules
- 2300 V UHV SiC modules
- 1200 V high-voltage solutions
A new gate driver evaluation board for dynamic characterization of UHV SiCPAK™ modules will also be demonstrated.
Navitas will debut ultra-compact:
- 240 W and 300 W GaN-based power solutions for AI-enabled high-performance computing
- 400 W to 1 kW GaN motor control systems for industrial applications
These designs emphasize superior efficiency, compact size, and high power density enabled by the latest GaNFast IC technology.
Navitas executives and engineers will participate in multiple technical sessions:
- March 24 | 8:55–9:20 AM CT | IS01.2
Maximizing MVHV SiC Performance and Reliability
Presenter: Sumit Jadav - March 25 | 11:05–11:30 AM CT | IS07.6
High-Power GaN ICs in 800V AI DC-DC Brick Solutions
Presenter: Llew Vaughan-Edmunds, VP & GM, GaN Business Unit - March 26 | 11:35–11:50 AM CT | IS27.4
Single-stage Power Converter Enabled by GaN Bidirectional Switches
Presenter: Llew Vaughan-Edmunds
With innovations spanning GaN and ultra-high-voltage SiC, Navitas continues to target high-power markets where efficiency, density, and reliability are critical—particularly as AI infrastructure and electrification accelerate globally.
Original – Navitas Semiconductor
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Infineon Technologies AG has expanded its CoolGaN™ portfolio with the new CoolGaN Drive HB 600 V G5 product family. The four new devices – IGI60L1111B1M, IGI60L1414B1M, IGI60L2727B1M and IGI60L5050B1M – integrate two 600 V GaN switches in a half-bridge configuration along with high- and low-side gate drivers and a bootstrap diode in a single package.
By combining key power stage functions into one thermally optimized solution, the new family reduces external component count, simplifies PCB layout challenges typically associated with fast-switching GaN devices and helps shorten development cycles. Infineon said the integrated approach allows designers to realize GaN’s core advantages, including higher switching frequencies, lower switching and conduction losses and greater power density.
Johannes Schoiswohl, Head of the GaN Business Line at Infineon, said the new solutions combine high-speed GaN performance with enhanced integration and robustness, helping designers shrink systems and improve efficiency in compact power electronics.
The CoolGaN Drive HB 600 V G5 devices target low-power motor drives and switched-mode power supplies. The integrated half-bridge architecture enables smaller magnetics and passive components, improved efficiency across operating conditions and enhanced dynamic performance in space-constrained designs.
The devices are engineered for high-speed precision, offering a 98 ns propagation delay with minimal mismatch to support efficient high-frequency operation and predictable timing. For simplified integration, the products feature PWM inputs compatible with standard logic levels and operate from a single 12 V gate driver supply. Fast under-voltage lockout (UVLO) recovery supports reliable start-up and transient performance.
For thermal optimization, the devices are housed in a 6 mm × 8 mm TFLGA-27 package with exposed pads, enabling efficient heat spreading and supporting heatsink-less designs in many applications.
Infineon said the new CoolGaN Drive HB 600 V G5 family strengthens its position in the GaN market by combining proven CoolGaN device technology with system-level integration and deep power conversion expertise, enabling customers to more easily adopt and scale high-efficiency GaN-based designs across industrial and consumer platforms.
Original – Infineon Technologies
