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Efficient Power Conversion (EPC) has introduced four new evaluation boards—EPC91128, EPC91129, EPC91130, and EPC91131—designed to accelerate the development of next-generation three-phase brushless DC (BLDC) motor drive systems using gallium nitride (GaN) technology.
The compact, high-performance inverter platforms are built around EPC’s integrated EPC23108, EPC23109, EPC23110, and EPC23111 ePower™ Stage ICs. The boards support input voltages ranging from 10 V to 80 V and output currents up to 29 ARMS, providing developers with a flexible platform for rapid evaluation in applications such as robotics, industrial automation, e-mobility auxiliary systems, and battery-powered equipment.
The evaluation boards integrate key inverter functions including gate drivers, current sensing, voltage sensing, housekeeping power supplies, temperature monitoring, and protection features. This high level of integration enables engineers to quickly prototype high-efficiency motor drive systems while minimizing the need for additional external circuitry. The platforms are optimized to reduce torque ripple and acoustic noise while providing flexible dv/dt control for application-specific tuning.
All four evaluation boards support complementary PWM and single-PWM control schemes, depending on the selected variant. They are also compatible with controller platforms from Microchip, Texas Instruments, STMicroelectronics, and Renesas, allowing developers to integrate them easily into existing motor-control development environments.
A key feature of the EPC91128–EPC91131 platforms is their demonstrated performance in practical motor-drive testing. During validation using a 48 V DC bus and switching frequencies of up to 100 kHz, the EPC91128 and EPC91129 boards successfully drove a 3 kW BLDC motor while delivering 15 ARMS continuous phase current without a heatsink. With a heatsink and natural-convection cooling, continuous current capability increased to 20 ARMS. Under pulsed operating conditions, the boards supported peak currents of up to 29 ARMS, demonstrating the ability of the integrated ePower™ Stage IC architecture to manage demanding dynamic motor loads.
The EPC91130 and EPC91131 variants achieved 10 ARMS continuous operation without a heatsink and 15 ARMS with heatsink assistance. Under pulsed conditions, these boards supported peak currents of up to 18 ARMS. According to EPC, the test results demonstrate that the compact GaN-based inverter platforms can sustain meaningful power levels suitable for industrial-grade motor control evaluation while maintaining thermal performance and switching efficiency at elevated switching frequencies.
Alex Lidow, CEO of EPC, stated that the new inverter platforms are intended to make GaN technology more accessible for high-performance motor-drive applications. He noted that as designers increasingly pursue higher efficiency, faster switching frequencies, and more compact power electronics systems, the new evaluation boards can help accelerate the transition from silicon-based solutions to GaN across robotics, industrial automation, and battery-powered motion systems.
Marco Palma, Vice President of Motor Drive Marketing and System Engineering at EPC, highlighted that the new platforms provide engineers with ready-to-use environments for evaluating the latest ePower™ Stage ICs under real motor-drive operating conditions. He added that the integrated sensing, protection, and control features allow developers to focus on system optimization rather than spending time designing the underlying power stage.
To support product development, EPC provides complete design resources for the new evaluation boards, including schematics, bill of materials (BOM), and Gerber files.
Original – Efficient Power Conversion
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SemiQ Inc. will present its latest silicon carbide (SiC) power module developments at PCIM Europe 2026, including an expanded QSiC™ Dual3 MOSFET module family featuring new high-thermal-performance configurations with aluminum nitride (AlN) substrates and pre-applied thermal interface material (TIM).
The company will showcase its latest technologies at Alfatec’s booth (Hall 4A, Booth 110) during the exhibition, which takes place from June 9 to 11, 2026, at Messe Nürnberg in Nuremberg, Germany.
Designed to address the increasing power density and thermal management requirements of AI data centers, high-power industrial systems, solar photovoltaic installations, and electric vehicle applications, the expanded portfolio combines flexible module designs with high-efficiency silicon carbide technology.
Among the featured products will be SemiQ’s latest QSiC™ Gen3 SiC modules, which deliver a 30% reduction in both specific on-resistance (RONsp) and turn-off energy losses (EOFF) compared with previous generations. According to the company, these improvements help reduce cooling requirements and switching losses in applications such as EV charging infrastructure, energy storage systems, and industrial motor drives.
A key highlight of the exhibit will be the expanded QSiC Dual3 module family. These 1200 V half-bridge MOSFET modules are designed to support the development of high-efficiency, high-power-density power converters. The latest additions to the family incorporate aluminum nitride substrates and pre-applied thermal interface material to enhance thermal performance.
SemiQ will also display its S3 module family, which includes a 608 A half-bridge module featuring an ultra-low RDS(on) of 2.4 mΩ and a junction-to-case thermal resistance (RθJC) of only 0.07°C/W.
The company’s SOT-227 module lineup will also be featured, offering five module options with RDS(on) values of 7.4 mΩ, 14.5 mΩ, and 34 mΩ. These modules are targeted at applications including server power supplies, battery charging systems, and photovoltaic inverters.
In addition, visitors will be able to explore SemiQ’s B2T1 six-pack module family, which offers RDS(on) values ranging from 19.5 mΩ to 82 mΩ. These modules are designed to minimize parasitic effects in motor drive systems and advanced AC-DC converter applications.
The company will also present its B3 full-bridge modules, which provide current ratings of up to 120 A and RDS(on) values as low as 8.6 mΩ. These products are intended to maximize power density in high-voltage DC-DC conversion systems.
“These SiC technologies directly address the challenges faced by those implementing AI infrastructure,” said Dr. Timothy Han, President of SemiQ. “By improving efficiency and addressing the escalating power demands of datacenters across key application areas, we are expanding the potential for AI to scale sustainably.”
SemiQ’s PCIM 2026 exhibit will focus on demonstrating how its latest silicon carbide module technologies support higher efficiency, improved thermal management, and increased power density across a range of demanding applications, including AI infrastructure, renewable energy systems, industrial automation, and electric mobility.
Visitors can view the company’s latest products and speak with technical representatives at Booth 110 in Hall 4A throughout the exhibition.
Original – SemiQ
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ROHM Co., Ltd. has announced that its 750 V silicon carbide (SiC) MOSFET has been adopted in a battery backup unit (BBU) designed for AI server power supplies. The selection comes as AI server power systems transition toward higher-voltage architectures and high-voltage direct current (HVDC) power distribution to support the growing demands of generative AI applications.
As AI accelerators continue to deliver increasing levels of performance and the adoption of generative AI expands, power consumption within data centers is rising significantly. To reduce transmission losses and improve overall efficiency, the industry is increasingly moving toward HVDC power architectures. Within these systems, BBUs and capacitor units (CUs), which provide power compensation at the server-rack level, are becoming increasingly important for protecting systems and safeguarding large volumes of data during power outages, voltage fluctuations, and other abnormalities.
The adopted device is ROHM’s SCT4013DLL, a 750 V SiC MOSFET used in the power supply section of a ±400 V AI server power architecture. By utilizing the inherent characteristics of SiC technology, the device offers a maximum junction temperature (Tj) of 175°C, enabling stable operation in BBU applications where heat generation increases due to higher operating voltages and greater power density.
ROHM noted that next-generation 800 VDC power architectures typically deliver approximately 560 V to the battery pack inside the BBU. As a result, the company’s 750 V-rated SiC MOSFETs are also suitable for deployment in these emerging power systems.
HVDC power supplies for next-generation AI servers require backup systems capable of handling high voltages and large currents with rapid response times while minimizing power losses during abnormal operating conditions. To address these requirements, SiC power devices that combine high-voltage capability, low-loss operation, and high-temperature tolerance are expected to play a central role in future power control systems.
As demand continues to grow across AI server and data center markets, ROHM plans to further expand the development and supply of power devices based on SiC, gallium nitride (GaN), and silicon technologies. The company also intends to support higher power efficiency through solutions that integrate these power devices with analog ICs and related technologies.
Original – ROHM
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Navitas Semiconductor announced its participation in NVIDIA’s Partner Ceremony held on May 29, 2026, at the Taipei Nangang Exhibition Center. The event brought together ecosystem partners supporting the NVIDIA AI Factory MGX™ platform, highlighting industry collaboration aimed at advancing next-generation AI data centers based on emerging 800 VDC rack architectures.
As part of the NVIDIA AI Factory MGX™ Ecosystem Showcase at COMPUTEX 2026 in Taipei, taking place from June 2–5, Navitas is demonstrating its 800 V-to-6 V DC-DC power delivery board (PDB). Powered by the company’s GaNFast™ technology, the PDB eliminates the need for a traditional 48 V intermediate bus converter (IBC) stage within compute server trays, enabling greater system efficiency, reliability, and board-space utilization.
The power delivery board incorporates sixteen 650 V, 11 mΩ GaNFast FETs in the company’s latest DFN8×8 dual-cooled package. The design targets 97.5% peak efficiency while operating at a switching frequency of 1 MHz and achieving a power density of 2,100 W/in³. The ultra-low-profile design is approximately 20% thinner than a mobile phone, allowing close integration with GPU boards to enhance transient response and improve power distribution efficiency.
“As AI workloads continue to scale and drive unprecedented demand for compute, power delivery has become one of the most critical challenges in enabling next-generation gigawatt AI factories,” said Chris Allexandre, President and CEO of Navitas. “Through our collaboration with NVIDIA within the MGX™ ecosystem, Navitas is delivering GaN and SiC power technologies that enable megawatt-scale AI server racks with higher power density, a smaller system footprint, and improved thermal performance, helping accelerate the transition to more efficient and scalable AI infrastructure.”
Navitas also highlighted its portfolio of wide-bandgap power technologies designed to support next-generation AI factory infrastructure. The company’s GeneSiC™ silicon carbide (SiC) solutions address power delivery requirements from the electrical grid to AI compute racks, supporting applications such as solid-state transformers (SSTs) with 2300 V and 3300 V SiC power modules, as well as high-power three-phase power supply units based on its fifth-generation 1200 V SiC MOSFET technology.
According to the company, these SiC technologies contribute to improved efficiency, increased power density, and enhanced system reliability in large-scale AI data center deployments.
Navitas’ GaNFast technology is designed to provide the high-frequency, high-efficiency DC-DC power conversion required to support increasing power demands from AI accelerators and GPUs. By leveraging the switching performance of gallium nitride devices, the company’s solutions enable MHz-frequency operation, higher power density, and faster transient response, facilitating more efficient power delivery from the rack level to the processor level.
Through its portfolio of GaN and SiC technologies, Navitas continues to collaborate with NVIDIA within the MGX ecosystem to support open and modular AI infrastructure architectures and contribute to the development of next-generation AI factory platforms.
Original – Navitas Semiconductor
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Infineon Technologies AG is expanding its CoolSiC™ JFET portfolio to address increasing demand from AI data centers and the growing adoption of solid-state power protection systems. The expanded portfolio includes new devices, package options, and configurations designed to support high-performance power distribution and protection applications.
The company announced that its first 750 V and 1200 V CoolSiC JFET devices in Q-DPAK packages, originally introduced last year, are now entering mass production. At PCIM Europe 2026, Infineon will also showcase additional package options and normally-off variants, further broadening its discrete power semiconductor offering for applications such as solid-state circuit breakers (SSCBs), battery disconnect switches, and power distribution systems used in AI data centers. Target applications include power supply units (PSUs), power backup units (PBUs), and intermediate bus converter (IBC) hot-swap and eFuse designs.
In these applications, power semiconductors spend most of their operating life in the on-state, while fault conditions occur only briefly and infrequently. As a result, conduction losses, linear mode robustness, and avalanche capability become critical performance parameters.
To address these requirements, Infineon is introducing a 1200 V CoolSiC JFET in the widely used TO-247-4 package. Offering on-resistance values starting at 5.0 mΩ, the device enables direct replacement in existing SiC MOSFET designs utilizing standard through-hole packages without requiring PCB redesign.
The company is also expanding the portfolio with normally-off CoolSiC JFET solutions that combine a CoolSiC JFET and an OptiMOS™ low-voltage silicon MOSFET within a single package.
The Dual Drive configuration provides independent access to both the SiC JFET and silicon MOSFET gates, allowing designers greater flexibility and control at the PCB level. The configuration also supports overdrive operation at VGS = 2 V, reducing RDS(on) by approximately 10%. The 750 V Dual Drive version is available in both TOLL and Q-DPAK packages, while the 1200 V variant is offered in Q-DPAK.
Infineon is also introducing a Cascode configuration, where the SiC JFET gate is internally connected and only the MOSFET gate is externally accessible. This design allows operation with standard gate drivers without requiring specialized gate-drive circuitry. The Cascode solution is targeted at applications where both switching and conduction losses are important design considerations. The 750 V Cascode version is available in a TOLL package.
The production-ready CoolSiC JFET devices in Q-DPAK packages offer RDS(on) values as low as 1.6 mΩ for the 750 V version and 2.3 mΩ for the 1200 V version, positioning them among the lowest-resistance SiC devices currently available in these voltage classes.
All devices are based on Infineon’s .XT interconnection technology utilizing diffusion soldering, which enhances thermal performance and improves robustness under pulsed and cyclic operating conditions. The devices are qualified under real-world operating environments to support reliable operation during overload and fault events.
According to Infineon, solid-state protection solutions based on CoolSiC JFET technology can achieve switching speeds that are orders of magnitude faster than traditional electromechanical protection systems. This capability helps reduce equipment damage, minimize downtime, and extend system operating life.
In AI data center environments, rapid fault isolation supports the protection of high-value computing and memory assets while enabling higher power density and improved uptime. For industrial applications, including solid-state circuit breakers, relays, and battery management systems, the devices provide long-term conduction reliability together with fast fault response capabilities.
With the addition of Q-DPAK, TO-247-4, and TOLL package options, as well as normally-on, Dual Drive, and Cascode configurations, Infineon now offers a comprehensive CoolSiC JFET discrete portfolio covering a broad range of on-resistance levels, gate-drive approaches, and assembly requirements.
The CoolSiC JFET 750 V and 1200 V devices in Q-DPAK packages are scheduled to enter mass production in 2026. Engineering samples of the additional TO-247-4, Dual Drive, and Cascode variants are currently available, with mass production also planned for 2026.
Infineon will showcase its expanded CoolSiC JFET discrete portfolio at PCIM Europe 2026 in Nuremberg, Germany, at Hall 7, Booth 470.
Original – Infineon Technologies
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Infineon Technologies AG has introduced two new system-level power solutions designed to address the evolving requirements of artificial intelligence (AI) data centers. The company unveiled an 18 kW three-phase power supply unit (PSU) reference design optimized for 50 V rack architectures and a 30 kW three-phase interleaved T-Type power factor correction (PFC) evaluation board developed for 800 VDC or ±400 VDC rack architectures with power sidecar configurations.
The two solutions are part of Infineon’s broader AI server power delivery portfolio and are intended to help server ODMs and OEMs accelerate development while achieving higher rack power, improved efficiency, and enhanced thermal performance.
As AI workloads continue to increase GPU power consumption and drive higher rack densities, data center power infrastructures are facing growing challenges. Infineon’s new designs are aimed at addressing these demands through advanced power conversion technologies and system-level integration.
The 18 kW PSU reference design incorporates a new integrated energy buffer concept that smooths power demand from the electrical grid during AI-related peak loads, eliminating the need for a separate capacitor bank unit. According to Infineon, this approach enables more efficient use of stored energy and reduces the required capacitor volume by up to 50%, lowering both component costs and system footprint.
The 30 kW PFC evaluation board utilizes Infineon’s CoolGaN™ semiconductor technology to achieve higher power density while reducing overall system cost, targeting data center operators expanding infrastructure to support increasing AI computing requirements.
The 18 kW PSU reference design achieves a peak efficiency of 97.5% through a combination of 650 V CoolSiC™ MOSFETs, 80 V CoolGaN™ switches, EiceDRIVER™ gate drivers, and a PSOC™ microcontroller. At the core of the system is a five-level active neutral-point clamped (ANPC) PFC topology, designed to deliver high efficiency across the full load range, particularly under low-to-medium load conditions, while reducing the size of magnetic components.
Infineon states that the ANPC topology provides a 0.2% higher peak efficiency at 50% load compared to a T-Type PFC design and a 0.4% improvement over a Vienna Rectifier topology.
The design also incorporates a novel integrated planar magnetic structure that enables a compact, modular, and scalable high-frequency transformer configuration. The integrated energy buffer provides a 20-millisecond hold-up time and supports GPU electrical data peak processing (EDPP) loads of up to 180%, meeting demanding AI load transient requirements.
The PSU accepts a wide three-phase input voltage range of 311 VAC to 528 VAC, allowing compatibility with global power grid standards. Thermal management has been engineered to support operation in ambient temperatures ranging from -5°C to 45°C.
Measuring 104 mm × 710 mm × 40 mm, the PSU is designed to fit standard 19-inch rack enclosures while delivering a power density of 100 W/in³.
The 30 kW T-Type PFC evaluation board combines 650 V CoolGaN™ bidirectional switches in the back-to-back switching path with 1200 V CoolSiC™ MOSFETs in the high-voltage power stage. The system achieves a peak efficiency exceeding 99%.
Power control is managed through the programmable power control accelerator (PPCA) integrated into the PSOC™ C3 microcontroller, enabling precise current and voltage regulation with fast dynamic response. The design maintains input current total harmonic distortion (iTHD) below 5% for loads above 30% and achieves a power factor greater than 0.99 across most operating conditions.
Current measurement is performed using the XENSIV™ TLE4978 isolated magnetic Hall plus Coil current sensor, which offers a bandwidth of 9 MHz, strong common-mode transient immunity (CMTI), and high measurement accuracy. These characteristics make the solution suitable for next-generation silicon carbide and gallium nitride-based power supply systems.
The modular platform is designed for integration into a 1U full-size PSU form factor and targets high-voltage DC data center applications requiring accurate voltage regulation and effective thermal management under the dynamic operating conditions associated with AI workloads.
Both designs are optimized for use with Infineon’s AI server power delivery portfolio, which spans the complete power chain from grid connection to processor core. The portfolio includes solid-state transformers, circuit breakers, power supply units, battery backup units, intermediate bus converters, and second-stage DC conversion power modules.
By combining silicon (Si), silicon carbide (SiC), and gallium nitride (GaN) technologies, Infineon provides a comprehensive platform for end-to-end power architectures supporting next-generation AI server infrastructure. The solutions are backed by scalable components, design resources, and system-level support aimed at accelerating deployment of advanced AI data center power systems.
Both the 18 kW three-phase PSU reference design and the 30 kW three-phase T-Type PFC evaluation board are expected to be available for evaluation in the near future.
Original – Infineon Technologies
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Infineon Technologies AG has introduced a 24 kW battery backup unit (BBU) DC-DC reference design for high-voltage (HV) DC bus architectures in artificial intelligence (AI) data centers. The solution is the first reference design of its kind to operate directly from a battery stack to an 800 V DC bus using both 650 V and 1200 V silicon carbide (SiC) technologies. It delivers a power density of 450 W/in³ and efficiency exceeding 99%, while maintaining the same physical form factor as current low-voltage BBU implementations.
The reference design addresses a key infrastructure challenge as data centers increasingly transition toward higher-voltage DC power distribution architectures.
“Powering AI at scale demands a systemic approach that optimizes every stage of the power delivery chain, from grid connection to the processor core,” said Magdalene Boebel, Senior Vice President and Business Line Head Power System ICs at Infineon. “Our 24 kW high-voltage BBU reference design, operating directly on an 800 V DC bus, sets a new benchmark in power density and efficiency, giving data center architects a fully integrated solution to meet the most demanding AI infrastructure requirements.”
The design is based on a multi-level, multiphase non-isolated architecture that combines stacked, interleaved, and coupled boost and buck stages. This architecture reduces magnetic component volume without relying on flying capacitors. A shared switching-leg topology creates a common current path between charge and discharge stages, enabling zero-voltage switching (ZVS) across the operating range.
According to Infineon, this approach reduces current ripple, supports fully integrated magnetics, and delivers fast transient response capabilities that are increasingly important as AI server power consumption becomes more dynamic and less predictable.
The compact module measures 112 mm × 88 mm × 118 mm and integrates a 24 kW main power stage together with a 2.4 kW auxiliary power supply. Charger and discharger sections share key components, including the EMI filter, capacitors, and protection MOSFETs, helping to reduce the overall component count. The design also incorporates silicon carbide junction gate field-effect transistors (JFETs) for ORing and hot-swap functionality, while a planar transformer combined with CoolSET™ technology implements the auxiliary switched-mode power supply in a compact footprint.
At the core of the DC-DC conversion stage is the CoolSiC™ MOSFET IMT65R033M2H, a 650 V device qualified for bidirectional buck-boost DC-DC operation in high-voltage BBU applications. The device’s low conduction and switching losses support conversion-stage efficiencies above 99%, reducing thermal load at rack level.
During grid disturbances, generator transitions, or power outages, the device enables rapid energy transfer between the HV DC bus and the battery with minimal losses. The IMT65R033M2H features a 650 V breakdown voltage rating, robust body diode, 175°C junction temperature capability, and Infineon’s .XT packaging technology to support operation under voltage spikes, high dv/dt transients, and continuous thermal cycling. Consistent gate-threshold voltage characteristics across devices also simplify multi-phase system design and support redundant rack configurations.
The architecture is documented in Infineon’s REF_12KW_HFHD_PSU reference design, which demonstrates the use of the IMT65R033M2H in high-power DC-DC stages for rack-level HV BBU applications.
The complete bill of materials includes CoolSiC 650 V Generation 2 MOSFETs, including the IMT65R033M2H, EiceDRIVER™ gate drivers, TLE497x current sensors, PSOC™ Performance line microcontrollers, CoolSET™ ICs for the auxiliary power supply, and a 1.7 kV SiC MOSFET.
Additional design features include reduced common-mode noise with negligible AC components and fully integrated magnetics. The design utilizes three power cards that provide mechanical connections for the positive DC, negative DC, and midpoint rails, while also serving as structural elements within the assembly, contributing to the solution’s compact footprint.
As data center operators move toward higher-voltage DC bus architectures to improve efficiency and reduce power distribution losses, battery backup units are becoming increasingly important for maintaining uninterrupted power delivery to AI servers during grid events. Infineon stated that the 24 kW HV BBU reference design demonstrates how silicon carbide-based DC-DC conversion can address the power density, efficiency, and reliability requirements of next-generation AI infrastructure.
The company’s broader power portfolio spans silicon (Si), silicon carbide (SiC), and gallium nitride (GaN) technologies, covering power conversion requirements across the entire power delivery chain from the electrical grid to the processor core.
Original – Infineon Technologies
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Infineon Technologies AG has unveiled EasyPACK™ S, a new compact power module and packaging concept developed to address growing demand for higher power density in space-constrained applications. Introduced at PCIM Europe 2026, the new platform is designed for applications such as electric vehicle onboard chargers and power supplies for AI data centers, where compact size, thermal performance, and efficiency are critical requirements.
EasyPACK S features a package height of just 5.6 mm and a footprint of approximately 33 × 36 mm², enabling significant system miniaturization while maintaining reliable thermal performance and reduced electromagnetic interference (EMI). The first modules in the new package family integrate Infineon’s CoolSiC™ MOSFET 1200 V Generation 2 technology, as well as 1200 V IGBT4 and IGBT7 devices.
The new module platform has been qualified according to the latest industrial and automotive standards. By incorporating Infineon’s .XT interconnection technology, EasyPACK S delivers enhanced reliability and extended operational lifetime. An integrated direct bonded copper (DBC) substrate provides stable thermal characteristics and uniform temperature distribution across the module.
Infineon has also implemented a new plastic material and silicone gel, allowing the modules to support continuous operating junction temperatures of up to Tvj(op) = 175°C. In addition, PressFIT pin technology doubles current-carrying capability while simplifying PCB assembly.
The package has been engineered to support automated manufacturing processes through features such as defined gripping areas, alignment holes, and reduced pin-to-pin tolerances. These design elements help streamline production while reducing manufacturing time and cost.
EasyPACK S has been developed as a scalable platform capable of supporting future silicon carbide and gallium nitride power devices while meeting demanding lifetime and reliability requirements. The platform architecture offers flexibility across semiconductor technologies, chip configurations, topologies, and power classes, enabling designers to optimize performance and accelerate product development.
The first EasyPACK S modules incorporating CoolSiC MOSFET G2 and IGBT4 technologies are scheduled to become available in July. The products are being showcased at Infineon’s booth during PCIM Europe 2026 in Nuremberg.
Original – Infineon Technologies
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Infineon Technologies AG has introduced a new family of silicon carbide (SiC) bidirectional switches (BDS) based on its 750 V CoolSiC™ Generation 2 technology. The new devices integrate two power switches into a single component through a vertically integrated dual-die, common-drain architecture housed in a top-side-cooled Q-DPAK package, simplifying system design and enabling new power conversion topologies.
The 750 V CoolSiC BDS is designed to support modern power systems requiring high efficiency, reliability, and long-term operational robustness. According to Infineon, the devices deliver strong performance across key switching parameters, including optimized RDS(on) × Qrr, low RDS(on) × QOSS, and low gate charge (Qg), helping to reduce both switching and conduction losses while enabling ultra-fast switching operation.
The devices feature a typical gate threshold voltage (VGS(th)) of 4.5 V at 25°C and an ultra-low QGD/QGS ratio that improves immunity against parasitic turn-on. In addition, an extended transient gate-bias tolerance ranging from -11 V to +25 V increases design margin and compatibility with existing gate-driver solutions. Rated for dv/dt performance up to 200 V/ns, the devices support high-frequency switching applications while maintaining durability and reliability. The initial product portfolio will cover on-resistance values ranging from 14 mΩ to 66 mΩ.
Designed for demanding power conversion environments, the 750 V CoolSiC BDS offers a breakdown voltage of 840 V, providing additional margin for systems operating at bus voltages above 500 V. The devices also feature proven avalanche robustness, overload endurance up to 200°C for 100 hours, and a short-circuit withstand capability of 2 µs. These characteristics help protect systems from voltage surges, transient stress, energy pulses, and inrush current events, supporting fault-tolerant operation over the product lifetime.
The new bidirectional switches further expand Infineon’s top-side-cooled product portfolio and support native liquid-cooling implementations in high-power applications. The company notes that the technology enables new levels of energy efficiency through the adoption of advanced power conversion topologies.
In automotive applications, the 750 V CoolSiC BDS is intended for onboard chargers (OBCs), EV charging systems, eFuse implementations, and pre-charge circuits. When combined with Infineon’s CoolSiC H-DPAK half-bridge devices, the solution supports the transition toward single-stage silicon carbide-based onboard charger architectures, enabling compact, high-power-density designs with improved space and cost efficiency.
For industrial applications, the technology is targeted at a range of emerging use cases, including:
• HVDC AI power supplies with native liquid cooling
• Residential solar and energy storage systems
• HVAC systems for hospitals and onsite data centers
• Current source inverter (CSI) drives for eVTOL platforms
• HVDC protection systems for power infrastructure and IT racks
• Fast-charging systems for humanoid robot fleets
Sampling of the 750 V CoolSiC bidirectional switch family has already commenced.
Original – Infineon Technologies
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Infineon Technologies AG has introduced the H-DPAK, a new addition to its top-side cooling package portfolio that integrates half-bridge devices based on 750 V CoolSiC™ Generation 2 technology. Designed to address evolving requirements in automotive and industrial power conversion systems, the new package combines high-performance silicon carbide technology with a compact, scalable form factor optimized for advanced power architectures.
The H-DPAK integrates a complete unidirectional half-bridge power stage within a single package. It incorporates a split lead-frame design with optimized drain pads that improve heat spreading and support clearance compliance in dense, high-power layouts. The package also maintains the industry-standard 2.3 mm height used by Infineon’s established Q-DPAK and TOLT packages, enabling seamless board-level integration and drop-in compatibility.
The new package is designed for liquid-cooling-ready systems and helps reduce parasitic loop inductance, supporting cleaner high-speed switching operation. By enabling higher switching frequencies, the H-DPAK contributes to reduced passive component size and improved overall system efficiency while leveraging the performance characteristics of CoolSiC technology, including optimized RDS(on) × QOSS and RDS(on) × Qrr performance, as well as robustness under avalanche, overload, and short-circuit conditions.
Infineon positions the H-DPAK half-bridge as a core switching building block that can be adapted to a broad range of power conversion topologies. Its integrated architecture supports more compact designs where board space utilization and total cost of ownership are key considerations. Compared with discrete board-level solutions, the H-DPAK enables higher switching frequencies, improving dynamic performance and allowing more compact magnetic components.
Target applications include:
• Next-generation HVDC AI power supply units utilizing five-level active neutral point clamped (5L ANPC) topologies
• HVDC battery and capacitor backup units
• Solid-state transformers
• Residential solar and energy storage systems
• Humanoid robot charging systems
• Two-stage and single-stage onboard chargers (OBCs)
• DC-DC converters
• Auxiliary power systems for electric vehicles (xEVs)
The integrated 750 V CoolSiC G2 technology features low gate charge (Qg) to reduce gate-drive losses, high dv/dt capability for high-frequency operation, and wide gate-bias tolerance that enhances design margins while supporting compatibility with existing gate-driver architectures. These characteristics make the solution suitable for high-power automotive and industrial applications where switching efficiency and robustness are critical.
With the introduction of the H-DPAK, Infineon further expands its top-side cooled packaging portfolio, providing a solution designed to support native liquid cooling and the increasing performance demands of next-generation power conversion systems.
Samples of the H-DPAK devices are available now.
Original – Infineon Technologies
