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Navitas Semiconductor Corporation and Cyient Semiconductors Private Limited, a fast-growing provider of ASIC, ASSP and power solutions, announced a strategic long-term partnership to accelerate GaN adoption in India and establish a complete end-to-end GaN ecosystem.
The collaboration outlines co-development of GaN products, digital and mixed-signal ICs, GaN-based system modules and design-enablement platforms addressing high-voltage, high-power markets in India, including AI data centers, electric mobility, performance computing, energy grid infrastructure and industrial electrification. The partners also intend to strengthen a local supply chain and manufacturing base aligned with the Government of India’s “Make in India” initiative, while deploying IC technologies to speed solution development in these segments.
Planned deliverables include products based on Navitas’ current GaN platforms alongside new devices tailored to India’s market needs. Cyient Semiconductors will focus on building a secure, local supply chain and ecosystem to reduce time-to-market for developers and OEMs across the region.
“This partnership represents a pivotal step in India’s semiconductor future in solving the complexities of power delivery at high voltages,” said Suman Narayan, CEO, Cyient Semiconductors. “By combining Navitas’ proven GaN technology with Cyient Semi’s design, manufacturing and supply-chain strengths, we’re creating a self-sustaining ecosystem that will accelerate the market adoption of GaN. Our goal is to make GaN accessible to every OEM looking to design, build and scale from India.”
“I believe the growth of GaN technology in India will exceed global trends, and Cyient Semiconductors is the perfect partner for Navitas to drive this revolution,” said Chris Allexandre, President and CEO, Navitas Semiconductor. “Together, Navitas and Cyient will power India’s vision of India for India—innovation, by India, for the world.”
The initiative is designed to empower Indian design houses and OEMs with locally sourced GaN components, manufacturing support and engineering collaboration, enabling faster development cycles and lowering barriers to GaN adoption. It also reinforces Cyient Semiconductors’ focus on driving semiconductor innovation, localization and scalability across critical technology sectors, while establishing a direct channel for Indian customers to access GaN technology with reliable procurement and technical support.
Original – Navitas Semiconductor
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VisIC Technologies announced the successful second closing of its Round B funding, securing $26 million to advance GaN power semiconductor technology for electric vehicles. The round was led by a global semiconductor leader, with Hyundai Motor Company and Kia joining as a strategic investor. The milestone strengthens VisIC’s position in high-performance GaN power devices for automotive traction inverters and next-generation mobility.
The global EV market is pushing for higher efficiency, longer driving range, and more sustainable power electronics. Traditional silicon is reaching its limits, and while SiC offers performance advantages, cost remains a barrier for mass adoption. VisIC’s D³GaN™ platform targets both 400 V and 800 V EV architectures, enabling lighter, smaller, and more energy-efficient traction inverters with scalability and reliability.
The new funding will accelerate key programs:
- Optimization, qualification, and release of Gen3 750 V GaN dice and power modules
- Development of Gen4 1350 V GaN technology to cover the full spectrum of EV designs
- Supply-chain stabilization and ramp-up of GaN deliveries for traction inverters
- Expansion of GaN solutions for emerging 800 V data-center power applications
“This investment marks a major milestone for VisIC and the global EV industry. Our D³GaN technology is redefining power electronics for electric vehicles, and the support of our strategic partners accelerates our mission to deliver high-efficiency, scalable solutions for the next generation of mobility,” said Tamara Baksht, CEO of VisIC Technologies.
“Hyundai Motor Company and Kia are committed to advancing sustainable mobility. Partnering with VisIC enables us to integrate cutting-edge GaN technologies into our EV platforms, enhancing efficiency, reliability, and performance as we shape the future of electric transportation,” said Hyundai Motor Company and Kia.
Original – VisIC Technologies
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Wise Integration, Powernet and KEC have signed a strategic memorandum of understanding to co-develop next-generation switched-mode power supply (SMPS) solutions tailored for AI server applications in South Korea. The collaboration supports the country’s broader push to scale AI infrastructure and deploy higher-density data centers.
Under the agreement, Wise Integration will provide GaN power devices, digital-control know-how and technical support. Powernet Technologies Corporation will lead new SMPS designs built on Wise’s WiseGan® and WiseWare® technologies. KEC Corporation will oversee backend manufacturing, including module integration and system-in-package production optimized for the thermal and reliability demands of AI-server racks.
The partners expect the program to accelerate competitive AI-server power supply designs, create new business opportunities in Korea’s AI-server market and shorten time-to-market by leveraging WiseGan® and WiseWare®. The initiative extends an earlier Wise Integration–Powernet collaboration focused on compact, digitally controlled power supplies for faster, smaller and more energy-efficient equipment.
AI servers require high power, generate significant heat and depend on SMPS architectures that convert high-voltage inputs (such as 400 V) to stable 48 V rails with minimal loss. GaN devices paired with digital control enable higher switching frequencies, improved efficiency and tighter management of fast, high-current load transients—attributes well suited to these workloads.
The effort aligns with South Korea’s investments in AI-dedicated data centers, including high-performance GPU clusters and digital infrastructure that demand more efficient, compact and scalable power-conversion systems. “Korea is moving quickly to build the next generation of AI data centers, and power architecture is a critical piece of that effort. Working with Powernet and KEC lets us bring GaN-based digital control into server-grade designs at scale—delivering the efficiency, thermal performance, and responsiveness that modern AI hardware depends on,” said Ghislain Kaiser, CEO of Wise Integration.
Beyond the MoU, Wise Integration continues to broaden its GaN plus digital-control platform to support partners as switching frequencies rise, thermal budgets tighten and efficiency targets become more aggressive. The company recently introduced WiseWare® 1.0 for totem-pole PFC and LLC topologies, a fully digital controller that, while aimed today at gaming, displays and industrial systems, shares the same architecture—high-frequency GaN operation, compact form factor and digitally managed efficiency—that naturally extends to server-class designs envisioned under this Korea-focused collaboration.
Original – Wise Integration
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Wolfspeed Inc. announced that its automotive MOSFETs will power onboard charger systems for Toyota Battery Electric Vehicles. The adoption underscores Toyota’s confidence in Wolfspeed’s ability to meet stringent quality and long-term reliability requirements.
“Toyota is known for its uncompromising approach to quality and reliability, and we’re honored to be supporting their next wave of electrification,” said Robert Feurle, Chief Executive Officer. “Wolfspeed’s U.S.-based supply chain and domestic silicon carbide manufacturing footprint ensure the stability and continuity they need to achieve their electrification goals.”
Silicon carbide has become the industry standard for high-voltage onboard power systems as the automotive sector accelerates toward clean energy vehicles. Beyond enabling fast, efficient, high-power-density traction inverters, silicon carbide brings clear advantages to onboard automotive auxiliary power systems such as onboard chargers—supporting shorter charging times, reducing energy loss across the vehicle, improving driving range, and lowering recharge costs over the vehicle’s lifespan.
“Our work with Toyota is built upon years of trust in engineering expertise, supply reliability, as well as a shared obsession with quality,” said Cengiz Balkas, Chief Business Officer. “This reinforces our role in driving electrification with silicon carbide technology that delivers performance, efficiency and safety.”
Wolfspeed supports a broad range of EV platforms directly with OEMs and through Tier 1 partners, making its technology a foundational element of the expanding EV ecosystem.
Original – Wolfspeed
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Infineon Technologies AG introduced new package options for its CoolSiC™ MOSFET 750 V G2 technology, engineered to raise system efficiency and power density in automotive and industrial power conversion. The devices are available in Q-DPAK and D2PAK, with a portfolio offering typical RDS(on) values up to 60 mΩ at 25°C.
The extended lineup targets onboard chargers and HV-LV DCDC converters in automotive, as well as server and telecom SMPS and EV charging infrastructure on the industrial side. Ultra-low RDS(on) of 4 mΩ enables applications demanding exceptional static-switching performance, including eFuse, high-voltage battery disconnect switches, solid-state circuit breakers and solid-state relays—supporting more efficient, compact and reliable system designs.
A key differentiator is the top-side cooled Q-DPAK package, delivering optimal thermal performance and robustness for high-power use cases. The technology also achieves excellent RDS(on) × QOSS and best-in-class RDS(on) × Qfr, reducing switching losses in both hard- and soft-switching topologies and delivering superior efficiency in hard-switching conditions.
CoolSiC MOSFETs 750 V G2 combine a high threshold voltage VGS(th),typ of 4.5 V at 25°C with an ultra-low QGD/QGS ratio to reinforce robustness against parasitic turn-on (PTO). The platform supports extended gate-drive capability with static gate voltages down to -7 V and transient voltages down to -11 V, providing wider design margins and strong compatibility with other devices in the market.
Samples are available now: Q-DPAK in 4/7/20/33/40/50 mΩ and D2PAK in 7/25/33/40/50/60 mΩ.
Original – Infineon Technologies
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Suzhou Inovance Automotive Systems Co., Ltd. and Innoscience (Suzhou) Technology Co., Ltd. announced that their next-generation 6.6kW on-board charger system, built on 650V GaN devices, has been successfully integrated into Changan vehicles. The result is a step change in charging efficiency and power density, raising the bar for automotive power electronics.
Inovance Automotive’s two-in-one architecture combines the on-board charger and DC-DC converter in a single unit. By pairing a globally optimized efficiency design with Innoscience’s 650V high-voltage GaN devices—known for ultra-low switching loss and high-frequency performance—the system delivers measurable gains:
· 30% increase in power density, reaching 4.8 kW/L
· Over 2% improvement in overall efficiency compared with similar products
· 20% reduction in system weight, supporting industry goals for higher efficiency and lightweight designThe jointly developed 6.6kW GaN OBC solution also improves vehicle packaging by saving space and enhancing integration flexibility at the platform level. Higher conversion efficiency shortens charging time for drivers and contributes to meaningful energy savings, ultimately supporting extended driving range.
Deploying this GaN-based OBC system in Changan vehicles marks a milestone for GaN in automotive power systems—a breakthrough that strengthens both Inovance Automotive and Innoscience as they expand in the EV sector. The companies plan to continue their collaboration to accelerate the shift toward higher efficiency and greater sustainability across next-generation electric vehicles.
Original – Innoscience Technology
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SemiQ Inc has broadened its third-generation QSiC™ MOSFET portfolio with seven new power modules that deliver industry-leading current density and thermal performance. The launch adds high-current S3 half-bridge, B2T1 six-pack and B3 full-bridge options engineered to raise system efficiency, simplify cooling, and cut switching losses in next-generation EV chargers, energy storage systems and industrial motor drives.
The expanded lineup targets the rising demand for ultra-efficient power conversion. In the standard 62 mm S3 half-bridge format, current capability reaches up to 608 A with junction-to-case thermal resistance as low as 0.07°C/W. The B2T1 six-pack modules integrate a complete three-phase power stage in a compact housing with RDS(on) values from 19.5 to 82 mΩ to streamline layout and minimize parasitics in motor drives and advanced AC-DC converters. The B3 full-bridge devices offer up to 120 A with on-resistance down to 8.6 mΩ and thermal resistance of 0.28°C/W, maximizing power density and efficiency for single-phase inverters and high-voltage DC-DC applications.
Quality and reliability measures include wafer-level gate-oxide burn-in to assure gate integrity and breakdown voltage testing beyond 1350 V. Built on SemiQ’s Gen3 SiC technology, the new modules operate at 18 V/-4.5 V gate drive and reduce both RONsp and turn-off energy (EOFF) by up to 30% versus prior generations.
Commenting on the release, Dr. Timothy Han said that EV infrastructure and new industrial applications demand ever-higher performance, and that the Gen3 full-bridge, half-bridge and six-pack modules—with higher current density and significantly lower on-resistance—are designed to meet those requirements.
Product list:
GCMX020A120B2T1P — Six-Pack, B2, 1200 V, 30 A, 19.5 mΩ
GCMX040A120B2T1P — Six-Pack, B2, 1200 V, 30 A, 39 mΩ
GCMX080A120B2T1P — Six-Pack, B2, 1200 V, 29 A, 82 mΩ
GCMX008B120B3H1P — Full-Bridge, B3, 1200 V, 120 A, 8.6 mΩ
GCMX016B120B3H1P — Full-Bridge, B3, 1200 V, 95 A, 16.6 mΩ
GCMX2P3B120S3B1-N — Half-Bridge, S3, 1200 V, 608 A, 2.4 mΩ
GCMX3P5B120S3B1-N — Half-Bridge, S3, 1200 V, 428 A, 3.6 mΩKey benefits:
• Higher power density through industry-leading current ratings and low RDS(on)
• Lower thermal resistance to ease cooling and reduce system size and cost
• Integrated topologies (six-pack, full-bridge, half-bridge) to simplify layout and minimize parasitics
• Up to 30% reduction in RONsp and EOFF compared to previous generations
• Robust screening, including wafer-level gate-oxide burn-in and >1350 V breakdown verificationAvailability details, reference designs and application notes can be aligned to specific EV charging, ESS and industrial drive requirements.
Original – SemiQ
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onsemi has introduced its EliteSiC MOSFETs in the industry-standard T2PAK top-cool package, offering improved thermal performance and design flexibility for high-power, high-voltage applications. Targeting sectors such as electric vehicles (EVs), solar energy infrastructure, and energy storage systems, the new solution addresses the growing demand for efficiency and compactness in power electronics.
The newly released 650V and 950V EliteSiC MOSFETs combine onsemi’s advanced silicon carbide technology with the thermally optimized T2PAK top-cool package, providing designers with a powerful tool for tackling thermal challenges in automotive and industrial systems. Initial devices are already shipping to lead customers, with additional variants scheduled for release beginning in Q4 2025.
The EliteSiC T2PAK package enables direct thermal transfer from the MOSFET to the system heatsink, bypassing limitations of PCB-based cooling. This configuration supports superior heat dissipation and lower junction temperatures, resulting in:
- Reduced thermal resistance and improved thermal efficiency
- Lower component stress and extended system reliability
- Higher power density in smaller footprints
- Simplified thermal design for faster product development cycles
Technical Highlights of the T2PAK Top-Cool Package:
- Supports RDS(on) values ranging from 12 mΩ to 60 mΩ
- Minimizes stray inductance for improved switching speeds and reduced energy losses
- Combines thermal and switching performance advantages of TO-247 and D2PAK formats
- Offers direct die-to-heatsink contact, eliminating PCB thermal bottlenecks
This packaging innovation allows engineers to design more compact and thermally optimized systems, helping to meet the efficiency requirements of modern power applications in EV powertrains, solar inverters, industrial drives, and high-performance chargers.
With the integration of EliteSiC technology and the top-cool T2PAK format, onsemi continues to expand its capabilities in delivering advanced silicon carbide solutions for next-generation power electronics.
Original – onsemi
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X-FAB is streamlining the development of advanced silicon carbide (SiC) power devices through its latest XbloX platform. This modular, scalable platform enables SiC device designers to transition from prototyping to full-scale production significantly faster—achieving production ramp-up up to nine months ahead of traditional development methods.
The third generation of the XbloX platform (XSICM03) introduces advanced capabilities tailored for high-performance planar SiC MOSFETs. It reduces cell pitch and improves on-state resistance, which enables up to 30% more dies per wafer and supports compact, efficient power device designs. The platform is optimized for high-growth sectors such as automotive, industrial automation, energy, and datacenter infrastructure, where next-generation SiC MOSFETs are in high demand.
XbloX provides two key benefits for device developers: first, X-FAB takes ownership of core process development activities by offering a Process Installation Kit (PIK) that contains pre-qualified process modules and implant recipes. Second, the standardized and modular configuration of the platform transforms wafer manufacturing into a scalable process, moving beyond the limitations of customer-specific production models.
The result is a dramatic reduction in development time, risk, and engineering resources. Customers benefit from an accelerated onboarding process—up to six times faster than conventional methods—and a guided approach that simplifies design, mask tooling, and process selection. Once process blocks are selected, XbloX automatically generates an integrated process flow that incorporates quality controls, business systems, and commercial terms.
“Thanks to a PIK, qualified SiC process development modules, and an automated onboarding process, customers need do little more than access our global hotline for support on block selection and deployment,” said Brian Throneberry, Business Director SiC Foundry at X-FAB. “We have robust rules in place to help guide design, mask tooling, engagement, and so on. Once the selection is finalized, XbloX automatically generates the process flow, which subsequently integrates quality systems, business functions, and commercial aspects for the customer.”
The XSICM03 platform continues to build on X-FAB’s leadership in wide-bandgap semiconductor manufacturing by aligning SiC process integration with CMOS-modeled specifications, design rules, and control plans. Customers will also benefit from future advancements as new modules are added to the XbloX ecosystem.
By offering a standardized, high-performance, and highly scalable solution for SiC device manufacturing, X-FAB’s XbloX platform positions itself as a strategic enabler for fabless power semiconductor developers aiming to accelerate time to market and expand product portfolios efficiently.
Original – X-FAB
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ROHM has commenced mass production of its SCT40xxDLL series silicon carbide (SiC) MOSFETs in TO-Leadless (TOLL) packages, offering a significant 39% improvement in thermal performance compared to conventional TO-263-7L packages with equivalent voltage ratings and on-resistance. The new series is designed to meet the growing demand for compact, high-power components in applications such as AI server power supplies and energy storage systems (ESS), where power density and miniaturization are increasingly critical.
As modern industrial and consumer equipment evolves, applications such as compact photovoltaic (PV) inverters and high-efficiency server systems face dual requirements: increasing power capability and reduced system size. This is especially true for power factor correction (PFC) circuits in slim-profile “pizza box” server power supplies, where discrete semiconductors must conform to strict thickness constraints of 4 mm or less.
ROHM’s SCT40xxDLL series responds to these requirements with a compact 2.3 mm low-profile form factor—approximately 50% thinner than traditional equivalents—and a reduced component footprint by about 26%. The series also distinguishes itself with a rated drain-source voltage of up to 750 V, surpassing the standard 650 V found in many TOLL package MOSFETs. This higher voltage rating contributes to increased surge voltage tolerance, lower gate resistance requirements, and reduced switching losses.
The SCT40xxDLL lineup includes six models with typical on-resistance values ranging from 13 mΩ to 65 mΩ. Maximum current ratings span up to 120 A, depending on the device, making them suitable for a wide range of high-performance power conversion systems. Mass production began in September 2025.
SCT40xxDLL Series Overview:
Part Number VDSS Max (V) RDS(on) Typ (mΩ) ID Max (A) PD Max (W) Storage Temp (°C) SCT4013DLL 750 13 120 405 -40 to +175 SCT4020DLL 750 20 80 277 -40 to +175 SCT4026DLL 750 26 61 214 -40 to +175 SCT4036DLL 750 36 46 164 -40 to +175 SCT4045DLL 750 45 37 133 -40 to +175 SCT4065DLL 750 65 26 100 -40 to +175 These devices are suitable for use in:
- Industrial power supplies for AI servers and data centers
- Photovoltaic inverters and ESS
- General-purpose consumer power supply applications
ROHM also provides simulation models for all six variants via its official website to assist engineers with rapid circuit evaluation and design. The SCT40xxDLL series is available through authorized distributors.
Original – ROHM
