-
Infineon Technologies has introduced a 27kW three-phase power supply unit reference design for AI data center server racks. The design supports 800VDC and ±400VDC power architectures and meets the requirements of the OCP Open Rack V3 specification.
The reference design combines Infineon’s 650V CoolSiC and CoolMOS MOSFETs with EiceDRIVER gate drivers, XENSIV current sensors and PSOC microcontrollers. It achieves more than 98% peak efficiency at a 480VAC input and 50% load.
Infineon uses a five-level active neutral-point-clamped power factor correction topology followed by a three-level LLC converter. The PSU achieves a power density of 116W/in³, compared with the 94W/in³ minimum specified for ORV3.
An integrated energy buffer provides 20ms of hold-up time during short grid disturbances. The buffer is also designed to smooth line-voltage effects associated with rapid changes in GPU power demand, allowing the architecture to operate without a separate capacitor bank unit. An integrated planar magnetic structure is used for the high-frequency transformer.
Both the PFC and LLC stages are digitally controlled to respond to AI server load transients. Infineon’s PSOC Control C3 Performance Line microcontroller incorporates a programmable power control accelerator for current and voltage regulation and dynamic response.
The design supports three-phase input voltages from 311VAC to 528VAC and provides a power factor above 0.99 across most of its operating load range. It also targets low input-current total harmonic distortion and supports ambient operating temperatures from -5°C to 45°C.
Infineon will showcase the 27kW PSU at the OCP Global Summit 2026 in San Jose from October 12–15 and at OktoberTech Silicon Valley on October 22.
Original – Infineon Technologies
-
Siltronic AG held its Supplier Day 2026 on October 7, bringing together 180 representatives from 100 suppliers worldwide. The event focused on supply chain collaboration, manufacturing competitiveness and the company’s preparations for future growth in the silicon wafer industry.
During the event, Siltronic Chief Financial Officer Claudia Schmitt discussed the current semiconductor wafer market environment and the challenges associated with the industry’s prolonged downturn. She noted that market conditions are improving but emphasized the continued importance of cost discipline, investment management and appropriate risk sharing across the supply chain.
Despite the extended downturn, Siltronic has continued investing in manufacturing capacity, particularly at its Singapore facility, while developing its product portfolio at its Freiberg site in Germany. The company has also implemented measures focused on cost control, investment discipline and liquidity management.
Siltronic recognized six suppliers through its 2026 Supplier Awards. Fujimi Incorporated received the Excellence in Innovation award, Meister Abrasives AG was recognized for Excellence in Quality, and Wacker Chemie AG received the Excellence in Sustainability award.
WSVK GmbH & Co. KG received the Excellence in Flexibility award, Herbert Arnold GmbH & Co. KG was recognized for Excellence in Execution, and ePAK International received the Excellence in Value Creation award.
Siltronic identified artificial intelligence, electromobility, renewable energy and digitalization as key applications supporting demand for semiconductors and silicon wafers. The company also acknowledged the wafer industry’s high capital requirements and cyclical operating conditions.
Looking ahead, Siltronic emphasized competitive cost structures, supply flexibility, innovation, quality, reliability and sustainability as priorities for its supplier relationships. The company plans to strengthen cooperation through joint technology roadmaps and the development of new solutions, with a focus on supply chain resilience and long-term manufacturing competitiveness.
Original – Siltronic
-
ROHM Semiconductor Europe will showcase its latest power and analog semiconductor technologies at electronica 2026, scheduled for November 10–13 in Munich, Germany. The company’s demonstrations will focus on AI infrastructure, electric mobility, automotive electronics and industrial applications.
For AI infrastructure, ROHM will present power semiconductor solutions targeting AI servers and data center power systems. The exhibit will focus on technologies designed to address power conversion efficiency, performance and reliability requirements associated with high-performance computing infrastructure.
ROHM will also demonstrate automotive semiconductor technologies covering electric powertrains, advanced driver assistance systems and vehicle lighting. These solutions are intended to support vehicle electrification and increasingly electronic automotive architectures.
For industrial applications, the company will demonstrate use cases for Solist-AI, its edge computing AI solution, alongside terahertz technologies. The demonstrations will address industrial automation and next-generation electronic equipment.
ROHM will present the technologies under its “Electronics for the Future” theme at Messe München in Hall C3, Booth 520, throughout electronica 2026.
Original – ROHM
-
PANJIT will showcase power semiconductor, advanced packaging and motor control technologies for automotive and AI-related applications at electronica 2026, scheduled for November 10–13 in Munich, Germany.
The company’s exhibit will cover automotive power conversion, silicon carbide power systems, pump control and robotic motion. PANJIT will present silicon and SiC MOSFET technologies for DC/DC conversion, vehicle power management and high-efficiency power systems.
PANJIT will also highlight advanced semiconductor packaging technologies designed to support thermal management, assembly inspection and compact system designs. These packaging capabilities are intended to complement the company’s power semiconductor portfolio in applications with increasing power density and heat dissipation requirements.
MetaWells, a member of the PANJIT Group, will present integrated motor control ICs for automotive water and oil pumps, liquid and air pumps, and robotic dexterous hands. The devices combine control and power functions to enable more compact motor-drive implementations.
The motor control technologies target applications ranging from automotive systems and cooling equipment to robotic motion systems within AI-related infrastructure and equipment.
PANJIT will exhibit its technologies at Messe München in Hall C3, Booth 538, throughout electronica 2026.
Original – PANJIT
-
Wolfspeed has received a conditional commitment for up to $1.5 billion in long-term financing from the U.S. Department of War’s Office of Strategic Capital to support domestic development and production of silicon carbide materials and wide-bandgap power devices.
The proposed financing would take the form of a senior secured delayed-draw term loan facility with a 30-year tenor. Funding remains subject to due diligence, negotiation and execution of definitive agreements, government approvals, appropriations, third-party consents and other closing conditions.
Wolfspeed plans to use the financing for a multi-year program covering SiC materials and power devices as well as expanded gallium nitride capabilities. The program includes strengthening domestic SiC materials and power-device production and establishing, expanding or onshoring low- and high-voltage GaN power device manufacturing capabilities.
The company also plans to upgrade its GaN epitaxy capabilities for next-generation communications infrastructure and electronic warfare systems. Additional work would include advancing GaN-on-SiC RF epitaxial wafer technology and developing domestic radiation-hardening capabilities for existing SiC products and future GaN devices.
The program would build on Wolfspeed’s existing U.S. manufacturing operations in North Carolina, New York and Arkansas. The technologies covered by the proposed financing target applications across defense, aerospace, communications and other power and RF systems.
As part of the potential financing, Wolfspeed would be required to issue warrants to the Department of War representing up to 7.5% of the company’s fully diluted equity. The VWAP-based warrants would be issued proportionally as individual financing tranches are funded.
The $1.5 billion commitment remains conditional and does not guarantee that Wolfspeed will receive the financing. The company said definitive agreements have not yet been executed and that completion remains dependent on the required financial, legal, investment and regulatory conditions.
Original – Wolfspeed
-
Renesas Electronics has expanded its gallium nitride portfolio into low-voltage power applications with its first family of 100V enhancement-mode GaN discrete transistors. The devices target AI data centers, robotics, factory automation, industrial motor drives, power tools and solar microinverters.
The new family consists of the RTP100E005G1FL, RTP100E2P6G1FL, RTP100E1P8G1FL-DSC and RTP100E1P2G1FL-DSC. The portfolio spans RDS(on) values from 5mΩ down to 1.2mΩ and is available with bottom-side and dual-side cooling configurations.
Renesas said the devices provide up to 35% lower hard-switching figure of merit and up to 63% lower soft-switching figure of merit compared with comparable GaN devices. The transistors combine low total gate charge and output charge with zero reverse-recovery charge to reduce switching losses.
The devices are designed for high-frequency power conversion, including applications moving toward MHz-class switching. Target topologies include synchronous rectification, multiphase buck converters and motor drives, particularly in systems using 48V bus architectures and downstream conversion stages associated with 800VDC data center power distribution.
According to Renesas, the low-voltage GaN devices can reduce switching losses by 40% to 70% and provide up to twice the system-level power density, depending on the application and converter architecture. The company also claims efficiency improvements of 1% to 3% compared with silicon-based designs.
The higher switching frequencies supported by the devices can enable smaller magnetic and passive components, while the low RDS(on) reduces conduction losses. Dual-side-cooled variants provide an additional thermal path for applications with higher power density.
Renesas is offering the GaN transistors in standard MOSFET-compatible package footprints to simplify migration from existing silicon MOSFET designs without requiring significant PCB changes.
Original – Renesas Electronics
-
Infineon Technologies has completed its acquisition of C2i Semiconductors, a Bengaluru-based company specializing in software-defined multiphase controllers and smart power stages for AI data center applications. Financial terms of the transaction were not disclosed.
Following completion of the acquisition, C2i’s engineering team has joined Infineon’s Power Systems division. The transaction adds digital power management and system-level power architecture capabilities to Infineon’s existing portfolio of power semiconductors and power systems.
C2i’s technology includes software-defined power management, multiphase controllers, smart power stages and digital control technologies. These products are designed to dynamically control power conversion and regulation in response to rapidly changing loads from AI processors and high-performance computing systems.
Infineon plans to combine these capabilities with its silicon, silicon carbide and gallium nitride power semiconductor technologies. The combined portfolio will address power delivery across the AI data center power path from grid-level conversion through processor-level voltage regulation.
The acquisition also supports Infineon’s development of vertical power delivery architectures, including future Substrate Integrated Voltage Regulators. These technologies are intended to provide power closer to AI processors while addressing increasing current and power density requirements.
C2i’s engineering operations will also expand Infineon’s R&D capabilities in India, particularly in digital power technologies. The company currently employs approximately 2,800 people across multiple locations in the country.
Infineon had previously announced the agreement to acquire C2i as part of its strategy to expand power management capabilities for AI servers and high-performance computing platforms. Completion of the transaction formally integrates C2i’s technology and engineering team into Infineon’s Power Systems business.
Original – Infineon Technologies
-
Microchip Technology and Navitas Semiconductor have developed an 800V-to-6V DC/DC reference design for AI data center rack power systems. The platform combines Microchip’s digital power control and security technologies with Navitas’ GaNFast gallium nitride power devices and is designed around the Open Compute Project’s 800V DC architecture.
The reference design directly converts an 800V DC input to 6V DC, combining the functions of separate 800V-to-50V and 50V-to-6V conversion stages into a single converter. The architecture targets high-power GPU systems where rack-level power distribution is moving toward higher DC voltages.
The power delivery board uses 16 Navitas NV6034 GaNFast FETs on the primary side in a stacked half-bridge topology. The devices are rated at 650V with 17mΩ on-resistance and use an 8 × 8mm dual-side-cooled DFN package to reduce thermal resistance and support higher continuous power operation.
The design targets up to 96% peak efficiency at full load while operating at a 1MHz switching frequency. Microchip and Navitas specify a power density of 2,100W/in³. The board also uses a low-profile form factor intended for placement close to GPU boards to improve power delivery and transient response.
Digital power control is provided by Microchip’s dsPIC33AK digital signal controllers. The dsPIC33AK256MPS306 family incorporates a 200MHz 32-bit processor with a double-precision floating-point unit, 78ps high-resolution PWM peripherals and multiple 12-bit analog-to-digital converters operating at up to 40MSPS.
Microchip’s TA100 CryptoAuthentication IC provides hardware-based security functions including secure boot, code authentication, trusted firmware updates, message authentication and key management. The dsPIC33AK platform also supports cryptographic functions and libraries for CNSA Suite 2.0-recommended post-quantum algorithms.
The reference platform includes hardware, software and design documentation for developing high-voltage rack power systems. Microchip and Navitas plan to showcase the 800V-to-6V design at the OCP Global Summit, scheduled for October 12–15, 2026, in San Jose, California.
Original – Microchip Technology
-
Magnachip Semiconductor has expanded its power semiconductor portfolio with 15 sixth-generation E6 super-junction MOSFETs targeting consumer, computing and industrial power applications below 1kW.
The E6 Series includes devices rated at 500V and 600V and is designed to balance switching losses, thermal performance and electromagnetic interference in compact power conversion systems. The MOSFETs also provide operating margin for voltage transients and avalanche conditions.
Magnachip evaluated a 600V, 280mΩ E6 MOSFET in a TO-220SFA package in the power factor correction stage of a television switch-mode power supply. At a 100VAC input and under identical test conditions, the device operated at approximately 5.3% lower temperature than Magnachip’s previous-generation MOSFET.
The 600V portfolio is available in DPAK (TO-252), TO-220FA and TO-220SFA packages across multiple on-resistance classes. The package and RDS(on) options are intended to accommodate different PCB mounting, thermal and system power requirements.
The devices target power factor correction and other power conversion functions in television switch-mode power supplies, notebook adapters, PC power supplies and other consumer and industrial power systems.
Magnachip said all 15 E6 super-junction MOSFETs are now in mass production.
Original – Magnachip Semiconductor
-
Vishay Intertechnology has introduced four 650V superjunction MOSFET power modules in the industry-standard SOT-227 package for industrial power conversion applications. The new devices are the VS-FC50SA65, VS-FC100SA65, VS-FC150SA65 and VS-FC50LA65.
Three of the modules use a single-switch configuration with nominal current ratings of 50A, 100A and 150A. The fourth, the 50A VS-FC50LA65, uses a low-side chopper configuration and integrates a 650V silicon carbide diode.
The VS-FC50SA65 has a typical RDS(on) of 44mΩ and total gate charge of 167nC, while the 100A VS-FC100SA65 provides 22mΩ and 338nC. The 150A VS-FC150SA65 reduces typical RDS(on) to 14.8mΩ with a gate charge of 508nC. The low-side chopper VS-FC50LA65 provides 45mΩ RDS(on) and 167nC gate charge.
All four devices use Vishay’s 650V superjunction MOSFET technology and are designed to balance conduction and switching losses in DC/DC converters and DC/AC inverters.
Target applications include solar inverters, hydrogen generation and fuel-cell systems, HVDC infrastructure, charging stations, switch-mode power supplies, welding and cutting equipment, UPS systems, lighting, rail power supplies and medical imaging equipment including X-ray and MRI systems.
The modules operate across a temperature range of -55°C to +150°C. Their standard SOT-227 package also allows them to serve as drop-in replacements in compatible existing designs without requiring PCB redesign.
Samples and production quantities of all four devices are available now, with Vishay specifying lead times of 12 weeks.
Original – Vishay Intertechnology
