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Infineon Technologies AG announced that its radiation-hardened semiconductor solutions successfully supported Artemis II, which completed a ten-day crewed mission reaching record distances from Earth before safely returning.
Infineon’s rad-hard components, supplied through its IR HiRel division, played a critical role in the Orion spacecraft, supporting key functions including power supply, control systems, and data communications. The mission serves as a real-world validation of semiconductor reliability under extreme deep-space conditions, where exposure to high-energy radiation poses significant risks to electronic systems.
The company’s rad-hard technology is engineered to withstand radiation at the device level rather than relying solely on shielding, ensuring long-term reliability in harsh environments. These components meet stringent international space standards, including MIL-PRF-38535 Class V, ESA ESCC, and NASA EEE-INST-002, reinforcing their suitability for mission-critical applications.
Infineon’s involvement in Artemis II builds on decades of space heritage, with its technologies previously deployed in satellites, the International Space Station, and numerous deep-space missions. The company highlighted that its components have collectively traveled over 20 billion kilometers, underscoring long-term reliability and performance consistency.
A key forward-looking element is the advancement of wide-bandgap technologies in space. Infineon is actively developing radiation-hardened gallium nitride (GaN) devices, which offer higher efficiency, reduced switching losses, and improved power density—critical for minimizing size, weight, and power (SWaP) constraints in spacecraft systems. Its 100 V rad-hard GaN transistor, qualified to JANS standards, represents a step toward broader GaN adoption in space applications.
From a market perspective, the increasing electrification and data demands of modern space missions are elevating the importance of advanced power semiconductors. As space programs scale in complexity and frequency, rad-hard Si and GaN devices are becoming central enablers of reliable, high-performance systems.
Infineon’s successful deployment in Artemis II reinforces its position as a key supplier in the space-grade semiconductor segment, while also highlighting the growing strategic importance of power electronics in next-generation aerospace and defense applications.
Original – Infineon Technologies
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Efficient Power Conversion has introduced the EPC9186HC2 and EPC9186HC3 evaluation boards, expanding its portfolio of GaN-based motor drive platforms for high-power applications up to 5 kW.
The new boards are designed as three-phase BLDC inverter platforms and target a wide range of applications including robotics, industrial automation, light electric vehicles, agricultural machinery, and high-power drones. Both platforms are built on EPC’s 100 V EPC2361 eGaN FET technology, delivering improved conduction performance and enabling higher current operation compared to previous designs.
The EPC9186HC2 integrates two GaN devices in parallel per switch position, while the EPC9186HC3 uses three in parallel, further reducing effective on-resistance and improving efficiency at higher load conditions. The systems support phase currents up to 150 ARMS and switching frequencies up to 120 kHz, enabling high power density and fast dynamic response.
From a performance standpoint, the use of GaN enables lower gate charge and output capacitance compared to silicon MOSFETs, resulting in faster switching, reduced losses, and smaller passive components. The boards also maintain controlled switching behavior (dv/dt ~6 V/ns), helping reduce torque ripple and acoustic noise—key requirements in precision motor control.
The platforms integrate essential system functions including gate drivers, current sensing, voltage monitoring, and protection features, and support both sensorless and encoder-based control. Compatibility with controller ecosystems from major suppliers such as Microchip, Texas Instruments, and STMicroelectronics allows for rapid system integration.
From a market perspective, these evaluation platforms highlight the continued expansion of GaN into motion control and electrification applications beyond power supplies. As demand grows for compact, efficient motor drives in robotics and e-mobility, GaN is increasingly positioned as a key enabler of higher switching frequencies, improved efficiency, and reduced system size.
This launch reinforces EPC’s strategy of accelerating GaN adoption by providing system-level tools that reduce development time and enable engineers to validate next-generation inverter architectures in real-world applications.
Original – Efficient Power Conversion
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Navitas Semiconductor has appointed Gregory M. Fischer to its Board of Directors, effective immediately, strengthening its leadership as the company scales in high-growth power semiconductor markets.
Fischer brings more than 40 years of semiconductor industry experience, having held senior leadership roles at major companies including Broadcom, Conexant Systems, and Rockwell. He currently serves as an independent director at Semtech and advises multiple technology firms, adding governance and strategic expertise to Navitas’ board.
At Navitas, Fischer will serve on the Compensation and Executive Steering committees and is expected to support the company’s transition toward its next growth phase, often referred to as “Navitas 2.0,” focused on scaling GaN and high-voltage SiC solutions.
From a strategic perspective, this appointment comes at a pivotal time as Navitas targets expansion in AI data centers, energy infrastructure, and industrial electrification. Strengthening board-level expertise is critical as the company navigates rapid growth, increasing competition, and the transition from innovation-driven scaling to sustained profitability.
Fischer’s background in both operational leadership and board governance is particularly relevant as Navitas continues to commercialize its GaNFast and GeneSiC portfolios across high-power applications.
From a market standpoint, the move reflects a broader trend among power semiconductor companies to reinforce leadership teams with experienced executives capable of guiding growth through capital-intensive expansion cycles and evolving end-market dynamics, especially in AI-driven and electrification markets.
Original – Navitas Semiconductor
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Micro Commercial Components has launched the MCTLD58N04Y, a 40 V N-channel MOSFET engineered for high-current power applications such as motor drivers, power tools, and industrial power systems.
The device features an ultra-low RDS(on) of 0.58 mΩ and supports a high continuous drain current of up to 639 A (depending on thermal conditions), enabling efficient conduction and stable operation under heavy load. This combination is particularly valuable in low-voltage, high-current designs where minimizing conduction losses is critical.
Built on split-gate trench MOSFET technology, the MCTLD58N04Y delivers low switching losses and improved efficiency, supporting compact system designs where thermal management and board space are key constraints. The MOSFET also offers strong avalanche ruggedness, making it suitable for handling transient and inductive load conditions commonly found in motor drive and industrial environments.
The device is housed in a thermally efficient TOLL-8L package, which provides low thermal resistance and effective heat dissipation, supporting reliable operation in demanding applications.
From a market perspective, this product aligns with the growing demand for high-current, low-voltage MOSFETs in electrified systems, including battery-powered tools, industrial automation, and emerging 48 V architectures. While wide-bandgap technologies dominate higher voltage segments, advanced silicon MOSFETs like this remain essential for optimizing efficiency and cost in low-voltage, high-current stages.
MCC’s latest release reinforces its focus on delivering high-performance silicon solutions for mainstream power applications where scalability, robustness, and cost-effectiveness are key decision factors.
Original – Micro Commercial Components
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Alpha and Omega Semiconductor Limited has inaugurated a new OSAT (Outsourced Semiconductor Assembly and Test) facility in Sanand, Gujarat, in partnership with Kaynes Semicon, marking a significant expansion of its global manufacturing footprint.
The facility has commenced high-volume production of AOS’s IPM5 (Intelligent Power Modules), which integrate 17 dies into a single package to enable advanced motor control and energy-efficient applications. The implementation of AOS’s proprietary IPM5 process at the site represents a key step in localizing advanced semiconductor packaging capabilities in India.
The project aligns with the broader objectives of the India Semiconductor Mission and highlights increasing momentum toward regional diversification of semiconductor supply chains. The rapid execution—from groundbreaking to production in just 14 months—demonstrates accelerated ecosystem development in India’s semiconductor manufacturing landscape.
From a strategic perspective, the collaboration combines AOS’s device and module expertise with Kaynes Semicon’s manufacturing capabilities, creating a scalable platform for both domestic and global markets. The facility is positioned not only to serve India’s growing demand for power semiconductors but also to support international supply chains under a “Made in India, for the World” approach.
From a market standpoint, this move reflects a broader industry trend toward geographic diversification of backend manufacturing, particularly in power semiconductors where packaging and integration (e.g., IPMs) are critical value drivers. It also underscores India’s emerging role as a strategic hub for OSAT and power electronics manufacturing, supported by government initiatives and increasing global investment.
Original – Alpha and Omega Semiconductor
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Infineon Technologies AG has maintained its position as the world’s leading automotive semiconductor supplier for the sixth consecutive year, according to 2025 market data from TechInsights.
The global automotive semiconductor market reached $74.4 billion in 2025, up from $69.9 billion in 2024. Infineon secured a 12.8% market share, reinforcing its leadership and slightly extending its lead over key competitors despite a marginal year-over-year share decline.
The company demonstrated strong regional performance, maintaining the top position in China, Europe, and South Korea, while ranking second in North America and Japan and narrowing the gap with market leaders in those regions. This broad geographic strength reflects Infineon’s deep integration with global automotive OEMs and Tier 1 suppliers.
A key driver of Infineon’s leadership is its dominance in automotive microcontrollers, where its market share increased to 36.0% in 2025—up 3.9 percentage points year-over-year. Microcontrollers are critical components enabling software-defined vehicles, electric drivetrains, advanced driver assistance systems (ADAS), and vehicle electrification.
Strategically, Infineon’s continued leadership highlights its strong positioning across key automotive megatrends, including electrification, digitalization, and software-defined architectures. Its portfolio spans power semiconductors (Si, SiC, GaN), microcontrollers, and system solutions—allowing it to capture value across the full automotive electronics stack.
From a market perspective, this reinforces Infineon’s role as a cornerstone supplier in the transition toward electric and intelligent vehicles. As automotive semiconductor content per vehicle continues to rise—particularly in EVs and autonomous systems—Infineon is well positioned to sustain growth and defend its leadership in this critical segment of the semiconductor industry.
Original – Infineon Technologies
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Efficient Power Conversion has launched a new generation of 100 V integrated GaN power-stage ICs—EPC23108, EPC23109, EPC23110, and EPC23111—targeting high-performance, compact power systems such as humanoid robots, drones, and battery-powered platforms.
The new devices integrate high-side and low-side eGaN FETs יחד with gate drivers and level-shifting circuitry into a single thermally enhanced QFN package. This high level of integration reduces external component count, simplifies design, and improves system-level reliability while maintaining the efficiency and power density advantages of GaN technology.
The ICs support operation up to 100 V, with current capabilities of 35 A (EPC23108/23109) and 20 A (EPC23110/23111), enabling high-frequency switching for advanced motion control and power conversion applications. Design flexibility is further enhanced through configurable PWM interfaces—single-input options for simplified multi-axis systems and dual-input configurations for adaptive control schemes.
From a functionality standpoint, the devices incorporate features aimed at real-world robustness, including deterministic shutdown behavior, active gate pull-down for fault conditions, and compatibility with standard industrial logic without additional signal conditioning. Support for continuous 100% duty-cycle operation makes them well-suited for applications requiring uninterrupted conduction, such as motor drives and precision control systems.
These integrated GaN power stages are particularly relevant for emerging applications like humanoid robotics, where multiple motors per system demand compact, efficient, and scalable power solutions. By reducing design complexity and improving predictability, EPC enables faster development cycles and more reliable system performance.
From a market perspective, this launch highlights the rapid expansion of GaN into motion control and robotics—segments traditionally dominated by silicon MOSFETs. As electrification extends into automation, drones, and AI-driven robotics, integrated GaN solutions are increasingly positioned as key enablers of higher efficiency, reduced system size, and improved dynamic performance.
Original – Efficient Power Conversion
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Semilab has introduced its new WG product line, a wafer geometry monitoring solution designed to support precise dimensional analysis in semiconductor substrate manufacturing.
The WG systems utilize capacitive sensing technology, a non-contact measurement method that delivers high accuracy and reproducibility while minimizing sensitivity to surface variations. This makes the solution particularly effective across different wafer surface conditions, including sliced, lapped, and etched substrates.
The platform is designed for process control during the wafering phase, where maintaining tight geometric tolerances is critical for downstream device performance. Key measurement capabilities include thickness, bow and warp, total thickness variation (TTV), and flatness. Optional features such as non-contact resistivity measurement and film stress characterization further extend its applicability for integrated circuit manufacturers.
To accommodate different production requirements, the WG product line is available in multiple configurations—WG-2201, WG-2202, and WG-2500—offering flexibility in wafer size handling and loading options.
From a market perspective, this launch aligns with increasing demands for tighter process control in advanced semiconductor manufacturing, particularly as device scaling, heterogeneous integration, and wide-bandgap materials introduce greater sensitivity to wafer-level variations. Metrology solutions like Semilab’s WG systems play a critical role in improving yield, ensuring device reliability, and enabling consistent high-volume production.
Original – Semilab
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onsemi has secured a major design win with Sineng Electric, supplying its latest-generation hybrid power integrated modules (PIMs) for next-generation renewable energy platforms, including 430 kW liquid-cooled energy storage systems (ESS) and 320 kW utility-scale solar string inverters.
The hybrid PIM integrates onsemi’s FS7 insulated-gate bipolar transistor (IGBT) technology with EliteSiC silicon carbide diodes in a high-density F5BP package. This combination delivers measurable performance gains, including up to 0.1% higher efficiency, 10% lower switching losses, and up to 8% lower power dissipation compared to previous generations.
At the system level, these improvements translate into significant benefits for Sineng’s platforms. In solar inverter applications, benchmarking showed a 0.07% efficiency increase and a reduction of 225 W in power losses for a 320 kW system. For energy storage systems, the modules enable up to 0.75% improvement in round-trip efficiency, a 5% reduction in auxiliary power consumption, and higher overall power density.
The advanced module design also reduces thermal resistance and stray inductance through optimized packaging and direct bonded copper (DBC) substrates, enabling cooler operation and improved long-term reliability under high-load conditions.
From a market perspective, this design win highlights the continued relevance of hybrid IGBT + SiC module architectures in utility-scale applications, where cost-performance optimization remains critical. While full-SiC solutions are gaining traction, hybrid modules offer a balanced approach—delivering efficiency gains without significantly increasing system cost.
Strategically, this collaboration strengthens onsemi’s position in the fast-growing renewable energy and grid infrastructure markets, where demand is being driven by large-scale solar deployment, energy storage expansion, and the increasing power requirements of AI-driven data centers.
Original – onsemi
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Magnachip Semiconductor Corporation has introduced its 8th-generation 40 V and 60 V medium-voltage (MV) MOSFETs, aimed at improving efficiency and power density in server and high-performance computing (HPC) power supply units.
The new devices are optimized for synchronous rectification (SR) stages, a critical part of modern server power architectures. Leveraging advanced split-gate trench (SGT) technology, the 40 V variants deliver up to 40% higher current density and approximately 25% faster switching speeds compared to the previous generation, while the 60 V versions achieve up to 50% higher current density and 60% faster switching.
Additional enhancements include fast anti-parallel diode technology to improve switching stability and reduce residual current effects. The MOSFETs support operation up to 175°C and are packaged in compact PDFN56 formats, enabling high-density designs required in AI servers and HPC systems.
Magnachip is expanding its portfolio with multiple RDS(on) options, including 0.8 mΩ and 1.0 mΩ (40 V) and 1.05 mΩ (60 V), following the earlier release of a 0.7 mΩ device. This broader lineup allows designers to optimize trade-offs between efficiency, thermal performance, and cost.
From a market perspective, this launch directly targets the fast-growing server power supply segment, driven by AI and data center expansion. Industry projections indicate steady growth in this market, reinforcing demand for high-efficiency, low-voltage power semiconductors.
Strategically, Magnachip is strengthening its position in the competitive low- to mid-voltage MOSFET space, where silicon technologies continue to dominate critical power stages despite the rise of GaN and SiC. By focusing on performance improvements in synchronous rectification, the company is addressing a key bottleneck in power conversion efficiency for next-generation computing infrastructure.
Original – Magnachip Semiconductor
