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Infineon Technologies to Shape Rapidly Growing GaN Market with Groundbreaking GaN 300 mm Technology

Infineon Technologies to Shape Rapidly Growing GaN Market with Groundbreaking GaN 300 mm Technology

September 11, 2024 Comments Off on Infineon Technologies to Shape Rapidly Growing GaN Market with Groundbreaking GaN 300 mm Technology
Infineon Technologies Development Team Brings the World's First SiC Trench MOSFET in 3300V Voltage Class to Series Production

Infineon Technologies Development Team Brings the World’s First SiC Trench MOSFET in 3300V Voltage Class to Series Production

September 11, 2024 Comments Off on Infineon Technologies Development Team Brings the World’s First SiC Trench MOSFET in 3300V Voltage Class to Series Production
Wolfspeed Unveiled a 2300V Silicon Carbide Module for 1500V DC Bus Applications

Wolfspeed Unveiled a 2300V Silicon Carbide Module for 1500V DC Bus Applications

September 10, 2024 Comments Off on Wolfspeed Unveiled a 2300V Silicon Carbide Module for 1500V DC Bus Applications
Shin-Etsu Chemical Created a 300-mm QST Substrate

Shin-Etsu Chemical Created a 300-mm QST Substrate

September 6, 2024 Comments Off on Shin-Etsu Chemical Created a 300-mm QST Substrate
Professor Baliga Awarded 2024 Millennium Technology Prize for Invention of IGBT

Professor Baliga Awarded 2024 Millennium Technology Prize for Invention of IGBT

September 4, 2024 Comments Off on Professor Baliga Awarded 2024 Millennium Technology Prize for Invention of IGBT
ROHM's 4th Gen SiC MOSFET Chips Used in ZEEKR

ROHM’s 4th Gen SiC MOSFET Chips Used in ZEEKR

August 29, 2024 Comments Off on ROHM’s 4th Gen SiC MOSFET Chips Used in ZEEKR
Texas Instruments to Receive $1.6 billion in CHIPS and Science Act Funding to Support 300mm Fabs in Texas and Utah

Texas Instruments to Receive $1.6 billion in CHIPS and Science Act Funding to Support 300mm Fabs in Texas and Utah

August 16, 2024 Comments Off on Texas Instruments to Receive $1.6 billion in CHIPS and Science Act Funding to Support 300mm Fabs in Texas and Utah
Infineon Technologies Opened World’s Largest SiC Power Semiconductor Fab in Malaysia

Infineon Technologies Opened World’s Largest SiC Power Semiconductor Fab in Malaysia

August 8, 2024 Comments Off on Infineon Technologies Opened World’s Largest SiC Power Semiconductor Fab in Malaysia

Latest News

TD Shepherd Joins Silicon Catalyst as In-Kind Partner to Accelerate Deep-Tech Innovation
LATEST NEWS

TD Shepherd Joins Silicon Catalyst as In-Kind Partner to Accelerate Deep-Tech Innovation

September 16, 2024 Comments Off on TD Shepherd Joins Silicon Catalyst as In-Kind Partner to Accelerate Deep-Tech Innovation
1 Min Read

Silicon Catalyst, an incubator + accelerator exclusively focused on accelerating semiconductor solutions, announced that TD Shepherd has joined as a new member of its In-Kind Partner ecosystem.  This partnership aims to enhance the support available to semiconductor startups, driving innovation and growth.

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Infineon Technologies to Shape Rapidly Growing GaN Market with Groundbreaking GaN 300 mm Technology

Infineon Technologies to Shape Rapidly Growing GaN Market with Groundbreaking GaN 300 mm Technology

September 11, 2024 Comments Off on Infineon Technologies to Shape Rapidly Growing GaN Market with Groundbreaking GaN 300 mm Technology
Infineon Technologies Development Team Brings the World's First SiC Trench MOSFET in 3300V Voltage Class to Series Production

Infineon Technologies Development Team Brings the World’s First SiC Trench MOSFET in 3300V Voltage Class to Series Production

September 11, 2024 Comments Off on Infineon Technologies Development Team Brings the World’s First SiC Trench MOSFET in 3300V Voltage Class to Series Production
JEDEC Published JEP200 Test Methods for Switching Energy Loss Associated with Output Capacitance Hysteresis in Semiconductor Power Devices

JEDEC Published JEP200: Test Methods for Switching Energy Loss Associated with Output Capacitance Hysteresis in Semiconductor Power Devices

September 11, 2024 Comments Off on JEDEC Published JEP200: Test Methods for Switching Energy Loss Associated with Output Capacitance Hysteresis in Semiconductor Power Devices
Infineon Technologies Introduced New StrongIRFET™ 2 Power MOSFET Portfolio

Infineon Technologies Introduced New StrongIRFET™ 2 Power MOSFET Portfolio

September 10, 2024 Comments Off on Infineon Technologies Introduced New StrongIRFET™ 2 Power MOSFET Portfolio
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WBG NEWS

Infineon Technologies to Shape Rapidly Growing GaN Market with Groundbreaking GaN 300 mm Technology

Infineon Technologies to Shape Rapidly Growing GaN Market with Groundbreaking GaN 300 mm Technology

September 11, 2024 Comments Off on Infineon Technologies to Shape Rapidly Growing GaN Market with Groundbreaking GaN 300 mm Technology
Infineon Technologies Development Team Brings the World's First SiC Trench MOSFET in 3300V Voltage Class to Series Production

Infineon Technologies Development Team Brings the World’s First SiC Trench MOSFET in 3300V Voltage Class to Series Production

September 11, 2024 Comments Off on Infineon Technologies Development Team Brings the World’s First SiC Trench MOSFET in 3300V Voltage Class to Series Production
JEDEC Published JEP200 Test Methods for Switching Energy Loss Associated with Output Capacitance Hysteresis in Semiconductor Power Devices

JEDEC Published JEP200: Test Methods for Switching Energy Loss Associated with Output Capacitance Hysteresis in Semiconductor Power Devices

September 11, 2024 Comments Off on JEDEC Published JEP200: Test Methods for Switching Energy Loss Associated with Output Capacitance Hysteresis in Semiconductor Power Devices
Wolfspeed Unveiled a 2300V Silicon Carbide Module for 1500V DC Bus Applications

Wolfspeed Unveiled a 2300V Silicon Carbide Module for 1500V DC Bus Applications

September 10, 2024 Comments Off on Wolfspeed Unveiled a 2300V Silicon Carbide Module for 1500V DC Bus Applications
Shin-Etsu Chemical Created a 300-mm QST Substrate

Shin-Etsu Chemical Created a 300-mm QST Substrate

September 6, 2024 Comments Off on Shin-Etsu Chemical Created a 300-mm QST Substrate
ROHM and United Automotive Electronic Systems Announced a Long-Term Supply Agreement for SiC Power Devices

ROHM and United Automotive Electronic Systems Announced a Long-Term Supply Agreement for SiC Power Devices

September 5, 2024 Comments Off on ROHM and United Automotive Electronic Systems Announced a Long-Term Supply Agreement for SiC Power Devices
Navitas Semiconductor Released Automotive-Qualified SiC MOSFETs in D2PAK-7L and TOLL Packages

Navitas Semiconductor Released Automotive-Qualified SiC MOSFETs in D2PAK-7L and TOLL Packages

September 4, 2024 Comments Off on Navitas Semiconductor Released Automotive-Qualified SiC MOSFETs in D2PAK-7L and TOLL Packages
Power Master Semiconductor Released 650V eSiC MOSFETs in TOLL Package

Power Master Semiconductor Released 650V eSiC MOSFETs in TOLL Package

September 2, 2024 Comments Off on Power Master Semiconductor Released 650V eSiC MOSFETs in TOLL Package
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PRODUCT & TECHNOLOGY NEWS

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Infineon Technologies to Shape Rapidly Growing GaN Market with Groundbreaking GaN 300 mm Technology
GaNLATEST NEWSPRODUCT & TECHNOLOGYTOP STORIESWBG

Infineon Technologies to Shape Rapidly Growing GaN Market with Groundbreaking GaN 300 mm Technology

September 11, 2024 Comments Off on Infineon Technologies to Shape Rapidly Growing GaN Market with Groundbreaking GaN 300 mm Technology
3 Min Read

Infineon Technologies AG announced that the company has succeeded in developing the world’s first 300 mm power gallium nitride (GaN) wafer technology. Infineon is the first company in the world to master this groundbreaking technology in an existing and scalable high-volume manufacturing environment. The breakthrough will help substantially drive the market for GaN-based power semiconductors.

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Infineon Technologies Development Team Brings the World's First SiC Trench MOSFET in 3300V Voltage Class to Series Production
LATEST NEWSPRODUCT & TECHNOLOGYSiCTOP STORIESWBG

Infineon Technologies Development Team Brings the World’s First SiC Trench MOSFET in 3300V Voltage Class to Series Production

September 11, 2024 Comments Off on Infineon Technologies Development Team Brings the World’s First SiC Trench MOSFET in 3300V Voltage Class to Series Production
4 Min Read

Infineon Technologies AG has been nominated for the Deutscher Zukunftspreis 2024, the Federal President’s Award for Technology and Innovation, for its development of a new type of energy-saving chip based on the innovative semiconductor material silicon carbide (SiC). The Jury of Deutscher Zukunftspreis has announced the three nominated teams in Munich.

Continue Reading →

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Power Semiconductors Weekly Vol 127

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  • Power Semiconductors Weekly - 2024
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