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Infineon Technologies Accelerates 300mm GaN Production to Cement Leadership in Next-Gen Power Semiconductors
July 2, 2025
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Navitas Partners with Powerchip to Launch High-Volume 200mm GaN-on-Silicon Production for AI, EV, and Energy Markets
July 1, 2025
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Renesas Unveils Gen IV Plus 650V GaN FETs for Multi-kW AI Data Centers and Power Systems, Marking First Major Launch Post-Transphorm Acquisition
July 1, 2025
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Okmetic Produces First Wafers from €400M Vantaa Fab Expansion, Doubling 200mm Capacity for MEMS, RF, and Power Devices
June 30, 2025
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Renesas Converts $2.06B Wolfspeed Deposit into Equity and Debt Amid Restructuring, Faces Estimated ¥250B Loss
June 23, 2025
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Wolfspeed Announces Major Debt Restructuring to Slash Liabilities by $4.6B and Strengthen Position as SiC Leader amid Chapter 11 Filing Plan
June 23, 2025
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Texas Instruments Announces Historic $60 Billion U.S. Investment into Seven Semiconductor Fabs Across Texas and Utah, Creating Over 60,000 Jobs
June 18, 2025
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ROHM Powers NVIDIA’s Leap to 800 V AI Infrastructure with Optimized SiC, GaN and Silicon MOSFET Solutions
June 13, 2025
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Latest News
LATEST NEWSPRODUCT & TECHNOLOGYSiCWBG
Nexperia Launches 1200V SiC Schottky Diodes for High-Efficiency AI Servers, Telecom, and Solar Applications
July 10, 2025
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2 Min Read
Nexperia announced the addition of two 1200 V 20 A silicon carbide (SiC) Schottky diodes to its continuously expanding portfolio of power electronics components. The PSC20120J and PSC20120L have been designed to address the demand for ultra-low power loss rectifiers which enable high-efficiency energy conversion in industrial applications. As such they are ideally suited for the power supply units (PSUs) in power-intensive artificial intelligence (AI) server infrastructure, telecommunications equipment and solar inverter applications.
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ROHM Unveils Level 3 SPICE Models for SiC MOSFETs with 50% Faster, High-Accuracy Circuit Simulations
July 10, 2025
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EPC Unveils First GaN IC-Based Humanoid Joint Inverter, Shrinking Size by 66% for Robotics and Drones
July 10, 2025
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Vishay Unveils Compact Gen 3 SiC Schottky Diodes With High Creepage, Low Capacitance for High-Speed Power Designs
July 9, 2025
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Aehr Test Systems Announced FY 2025 Results
July 8, 2025
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Toshiba Unveils AI-Optimized Resin-Insulated SiC Power Module with 21% Better Thermal Performance and 61% Smaller Cooling Needs
July 7, 2025
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WBG NEWS

Nexperia Launches 1200V SiC Schottky Diodes for High-Efficiency AI Servers, Telecom, and Solar Applications
July 10, 2025
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ROHM Unveils Level 3 SPICE Models for SiC MOSFETs with 50% Faster, High-Accuracy Circuit Simulations
July 10, 2025
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EPC Unveils First GaN IC-Based Humanoid Joint Inverter, Shrinking Size by 66% for Robotics and Drones
July 10, 2025
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Vishay Unveils Compact Gen 3 SiC Schottky Diodes With High Creepage, Low Capacitance for High-Speed Power Designs
July 9, 2025
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Toshiba Unveils AI-Optimized Resin-Insulated SiC Power Module with 21% Better Thermal Performance and 61% Smaller Cooling Needs
July 7, 2025
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Infineon Technologies Accelerates 300mm GaN Production to Cement Leadership in Next-Gen Power Semiconductors
July 2, 2025
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Navitas Partners with Powerchip to Launch High-Volume 200mm GaN-on-Silicon Production for AI, EV, and Energy Markets
July 1, 2025
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Renesas Unveils Gen IV Plus 650V GaN FETs for Multi-kW AI Data Centers and Power Systems, Marking First Major Launch Post-Transphorm Acquisition
July 1, 2025
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FINANCIAL RESULTS

Aehr Test Systems Announced FY 2025 Results
July 8, 2025
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Soitec Reports FY2025 Results
May 27, 2025
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Analog Devices Reports Q2 FY2025 Results
May 22, 2025
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Applied Materials Announced Q2 2025 Results
May 16, 2025
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Toshiba Announced FY 2024 Results
May 16, 2025
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Ideal Power Reports Q1 2025 Financial Results
May 16, 2025
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Nexperia Announced FY 2024 Results
May 15, 2025
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CVD Equipment Reports Q1 2025 Financial Results
May 14, 2025
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Magnachip Reports Q1 2025 Results
May 13, 2025
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SMIC Reports Q1 2025 Financial Results
May 8, 2025
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