Toshiba Releases 3rd Generation 650V SiC Schottky Barrier Diodes

Toshiba Electronic Devices & Storage Corporation has launched the “TRSxxx65H series,” the company’s third and latest generation of silicon carbide (SiC) Schottky barrier diodes (SBDs) for industrial equipment. Volume shipments of the first 12 products, all 650V, start today, with seven products housed in TO-220-2L packages and five in DFN8×8 packages.

The new products use a new metal in a third generation SiC SBD chip that optimizes the junction barrier Schottky (JBS) structure of the second generation products. They achieve industry-leading low forward voltage of 1.2V (Typ.), 17% lower than the 1.45V (Typ.) of the previous generation.

They also improve the trade-offs between forward voltage and total capacitive charge, and between forward voltage and reverse current, which reduces power dissipation and contributes to high efficiency of equipment.

Applications

• Switching power supplies
• EV charging stations
• Photovoltaic inverters

Features

• Industry-leading low forward voltage: V_F＝1.2V (Typ.) (I_F=I_F(DC))
• Low reverse current:
  TRS6E65H  I_R＝1.1μA (Typ.) (V_R=650V)
• Low total capacitive charge:
  TRS6E65H  Q_C＝17nC (Typ.) (V_R=400V, f=1MHz)

Original – Toshiba