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Bosch has developed its silicon carbide S-Cell, a standardized power semiconductor unit designed for PCB-embedded power modules targeting automotive, industrial and renewable energy applications. The technology combines Bosch SiC trench MOSFETs with an embedded PCB architecture to support higher power density and reduced electrical parasitics.
The S-Cell is based on Bosch’s SiC trench MOSFET technology and covers 750V and 1200V voltage classes. Each standardized power unit measures 11 × 11mm² and features top-side copper metallization optimized for integration directly into PCB-based power module structures.
The standardized format is designed to support different module configurations and circuit topologies while allowing multiple S-Cells to be incorporated into scalable power module platforms. Bosch said the dimensions are aligned with established industry design formats to simplify integration and development from initial prototypes toward production-ready designs.
Embedding the power semiconductor within the PCB shortens electrical current paths and reduces parasitic inductance compared with conventional module packaging. Lower inductance can reduce voltage overshoot and switching losses while supporting faster switching, particularly in systems operating with high DC bus voltages.
The architecture also provides additional flexibility for thermal management and electrical interconnection. Bosch is targeting applications requiring high-current and high-voltage operation while balancing switching performance, electromagnetic compatibility and thermal stability.
Bosch is applying a vertically integrated development approach to the S-Cell, covering SiC chip design and fabrication, copper metallization, sintering and PCB integration. This allows parameters including chip structures, sintering materials, copper component tolerances and embedding processes to be coordinated during development.
Reliability evaluation includes electrical characterization and testing based on relevant AEC-Q101 requirements. Bosch is also evaluating interactions between the SiC chip, electrical contacts, PCB embedding and thermal interfaces as part of system-level qualification and development.
The S-Cell is intended for applications including electric vehicle traction inverters and industrial power converters. Bosch plans to combine the embedded architecture with its third-generation SiC bare-die technology for systems requiring compact dimensions, high power density, reduced losses and improved thermal performance.
Original – Bosch
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Toshiba Electronic Devices & Storage has expanded its silicon carbide power module portfolio with the IX800FXF2YMS4, a 3300V dual SiC MOSFET module targeting railway, renewable energy and industrial power conversion applications.
The module incorporates Toshiba’s third-generation SiC MOSFET chips and is rated for a drain current of 800A. It also specifies an I²t limit of 300kA²s for the diode section, indicating its surge current capability under abnormal operating conditions. The rating is specified at an initial channel temperature of 175°C using a 10ms half-sine-wave pulse.
The IX800FXF2YMS4 has a typical drain-source on-voltage of 1.4V at 800A, a gate-source voltage of 20V and a channel temperature of 25°C. The low on-voltage is designed to reduce conduction losses in high-power systems.
Toshiba specifies typical turn-on switching losses of 185mJ and turn-off losses of 175mJ. These figures are measured at a DC supply voltage of 1800V, drain current of 800A and channel temperature of 175°C, with gate voltages of +20V and -6V.
The module uses Toshiba’s iXPLV package and silver-sintered bonding for the SiC chips. The bonding technology is intended to improve thermal resistance and reliability at elevated temperatures, allowing the device to support a maximum channel temperature of 175°C.
Target applications include railway traction inverters and converters, renewable energy generation systems, industrial motor controls and power conversion equipment. The latter includes solid-state transformers, uninterruptible power supplies and energy storage systems.
The IX800FXF2YMS4 expands Toshiba’s iXPLV SiC MOSFET module portfolio to four products, providing additional voltage and current options for industrial power conversion designs.
Original – Toshiba
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MCC has introduced the MCAC130N04Y, a 40V N-channel power MOSFET designed for high-current power conversion in industrial systems, motor drives, battery management and portable power equipment.
The device uses Split Gate Trench (SGT) MOSFET technology and is housed in a compact PDFN5060 package. It has a maximum RDS(on) of 1.9mΩ, targeting reduced conduction losses in high-current applications.
The MCAC130N04Y supports a continuous drain current of 130A at a case temperature of 25°C. Its junction-to-case thermal resistance is rated at 1°C/W, supporting heat transfer during high-power operation.
The MOSFET has a total gate charge of 129nC. MCC’s SGT architecture is designed to balance conduction and switching losses for applications requiring efficient power conversion within limited PCB space.
The 40V device targets mid-voltage switching applications where high current capability, low on-resistance and compact packaging are required, including motor control and battery-powered systems.
The MCAC130N04Y is halogen-free, RoHS compliant and rated at Moisture Sensitivity Level 1.
Original – Micro Commercial Components
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L&T Semiconductor Technologies (LTSCT), a wholly owned subsidiary of Larsen & Toubro, unveiled 40 semiconductor products at SEMICON India 2026, spanning power semiconductors, analog and mixed-signal ICs, compute, connectivity and RF technologies.
The portfolio includes LTSCT’s first silicon carbide platform, based on a 1200V SiC MOSFET designed for high-power conversion applications. Target applications include EV fast chargers, microgrids, solid-state transformers and traction inverters.
LTSCT also showcased its first internally developed SiC power modules and devices alongside a broader power discrete portfolio covering MOSFETs, diodes and bridge rectifiers.
Another milestone presented at the event was the tape-out of a BLDC motor controller designed entirely in India. The highly integrated device incorporates protection functions and uses a flexible architecture intended to support multiple product models from a common platform. LTSCT is initially targeting energy-efficient BLDC ceiling fan applications, with the design intended to reduce bill-of-materials requirements.
The company’s analog and mixed-signal portfolio included the BLDC controller as well as an internally designed USB-C GaN charger. Its compute products included an indigenous Vision Camera SoC combining image processing with on-device AI acceleration and a Secure Identity Platform incorporating hardware-based security and cryptographic acceleration for applications including e-passports, payment cards and national identification systems.
In connectivity and RF, LTSCT presented four internally designed modules targeting smart metering, automotive and digital payment applications. These included its LCC43 Dynamic QR and Soundbox proof of concept for the National Payments Corporation of India’s proposed Trusted Device Layer.
The 40-product portfolio is focused on three areas identified by LTSCT: national security, digital sovereignty and energy resilience. Applications span secure identity, intelligent surveillance, IP cameras, communications infrastructure, data centers, AI infrastructure and power conversion.
LTSCT said it is working to move its semiconductor designs toward scalable production and commercial deployment through collaboration with India’s semiconductor manufacturing ecosystem.
Original – L&T Semiconductor Technologies
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onsemi has introduced its Embedded Power Platform (EPP), a wafer-level architecture that uses the silicon wafer itself as the foundation of the package and enables silicon, silicon carbide and gallium nitride power technologies to be integrated within a common structure.
EPP is designed to integrate multiple devices, including FETs, drivers and controllers, into a single package. The architecture allows electrical, thermal and mechanical characteristics to be designed and optimized together rather than treating the semiconductor, packaging and thermal systems as separate development stages.
The platform uses onsemi’s standard 300mm silicon wafer manufacturing capabilities, bringing integration processes into the semiconductor fab. It combines wafer-level manufacturing, semiconductor design tools and simulation to support power-system development across different device technologies and power levels.
According to onsemi, EPP can provide three to five times higher power density depending on the application and reduce development cycles to as little as four months. The architecture is also designed to improve heat dissipation, reduce electrical losses through lower parasitic inductance and support higher switching frequencies.
For AI infrastructure, onsemi has developed an early EPP-based solid-state circuit breaker design that it says is approximately 50% smaller and operates 20% cooler than existing designs. The platform uses its overall footprint for heat conduction while reducing packaging overhead, targeting higher-density power distribution and protection systems for AI data centers.
For electric vehicle traction inverters, onsemi said EPP can provide up to four times higher power density and 15% lower power losses compared with conventional approaches. The scalable architecture is intended to allow a common inverter platform to be used across different vehicle models and power classes.
Subaru is among the first companies evaluating EPP for future electrified vehicle architectures. The automaker will receive early access to engineering samples, simulation models and technical support as part of its collaboration with onsemi.
onsemi expects EPP sampling to begin during 2026 with selected customers and ecosystem partners in automotive and AI applications.
Original – onsemi
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Resonac has successfully grown and processed a 300mm (12-inch) silicon carbide single crystal, marking a development milestone in the company’s work on larger-diameter SiC substrates and epitaxial wafers.
The 300mm wafer represents one of the largest SiC substrate sizes currently under development. Resonac achieved the result using its existing expertise in SiC single-crystal growth and substrate processing, together with technology developed through Japan’s Green Innovation Fund Program.
Resonac currently supplies primarily 150mm SiC epitaxial wafers, which remain the mainstream wafer size for SiC power semiconductor manufacturing. The company has also started shipments of 200mm SiC epitaxial wafers as the industry moves toward larger wafer diameters.
SiC is used in power semiconductor devices because of its ability to reduce power-conversion losses and heat generation compared with conventional silicon-based devices. Applications include electric vehicles, renewable energy systems and power supplies for data centers.
Beyond power devices, Resonac is evaluating opportunities for single-crystal SiC in thermal-management and semiconductor packaging applications. The material’s high thermal conductivity could support its use as a heat-spreading or advanced packaging substrate for AI servers and high-performance computing systems.
Resonac also identified AR smart glasses as another potential application for SiC substrates, where the material’s high refractive index could be used in optical components.
The 300mm development is part of Resonac’s ongoing work to increase the diameter and improve the quality of its SiC single-crystal substrates and epitaxial wafers.
Original – Resonac
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Taiwan Semiconductor has expanded its TQM Series with two 60V dual N-channel power MOSFETs targeting automotive and other high-reliability power applications. The devices are supplied in a low-profile 5mm x 6mm PDFN56UD package and are designed to provide pin compatibility with several commonly used power semiconductor packages.
The new TQM130NH06DCR and TQM130NH06LDCR are both rated at 60V with a continuous drain current of 40A and RDS(on) of 13mΩ. The TQM130NH06DCR has a total gate charge of 16.2nC, while the TQM130NH06LDCR reduces gate charge to 8.1nC.
The PDFN56UD package incorporates heat-spreader contacts to support thermal management and higher power density. Its dual-MOSFET configuration integrates two devices within a single package, reducing PCB area and potentially lowering component count and bill-of-materials requirements.
The devices also feature wettable flanks for automated optical inspection of solder joints and automated PCB assembly. They are manufactured to meet AEC-Q automotive requirements, with production part approval process documentation available.
Target applications include H-bridge and half-bridge circuits, motor and actuator controls, and solenoid drivers. Taiwan Semiconductor said the PDFN56UD footprint can also serve as a drop-in alternative to DFN8, LFPAK56 and PowerFLAT package formats.
Original – Taiwan Semiconductor
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ROHM has introduced the RS4P063BPHZG, a 100V N-channel MOSFET designed for automotive safety functions and protection circuits that can experience short-duration, high-power loads.
The device provides a wide safe operating area (SOA) across a broad voltage range and is housed in the standard HPLF5060 package. According to ROHM, the RS4P063BPHZG delivers approximately five times the SOA tolerance of conventional equivalent-sized products under conditions of VDS = 100V and a 100µs pulse width.
ROHM achieved the increased SOA capability through a device design that suppresses secondary breakdown during high-power operation. The MOSFET is intended for applications including airbag inflator ignition circuits and seatbelt pretensioner drive circuits, where devices can be subjected to momentary high-current and high-voltage conditions.
The HPLF5060 package uses the widely adopted 5.0mm × 6.0mm footprint, allowing the MOSFET to be evaluated as a replacement in existing automotive layouts while limiting the need for PCB design changes.
The RS4P063BPHZG extends ROHM’s Wide-SOA MOSFET technology into automotive applications. The company has previously developed Wide-SOA devices for applications including AI servers and industrial power supplies.
Mass production of the RS4P063BPHZG began in June 2026. ROHM lists a sample price of $4.00 per unit, excluding tax, and is providing design models and development tools to support circuit evaluation.
ROHM is also developing automotive Wide-SOA MOSFETs in larger HPLF8080, measuring 8.0mm × 8.0mm, and TOLG packages, measuring 9.9mm × 11.7mm, as it expands its portfolio for automotive safety and protection circuits.
Original – ROHM
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Vishay Intertechnology has introduced four series of surface-mount standard rectifiers in its DFN6546A package with wettable flanks. The new SE50N6x, SE80N6x, SE100N6x and SE120N6x series provide current ratings of 5A, 8A, 10A and 12A, respectively, with 200V, 400V and 600V reverse-voltage options.
The DFN6546A measures 6.5mm by 4.6mm with a typical height of 0.88mm. According to Vishay, the devices are the first standard rectifiers offered in this low-profile package with wettable flanks. AEC-Q101 qualified versions are available for automotive applications.
Compared with devices in the SMPC (TO-277A) package using the same PCB footprint, Vishay said the new rectifiers provide a 10% lower profile, 20% higher current ratings and 82% higher forward surge current capability. The package uses increased copper content and larger die sizes to improve thermal performance and current handling.
The devices use an oxide planar chip junction design and provide typical reverse leakage current below 0.1µA. Forward voltage ranges from 0.77V for the 5A devices to 0.84V for the 12A versions, measured at their respective rated currents and a junction temperature of 125°C.
Forward surge current capability is 240A for the 5A and 8A series, 300A for the 10A devices and 320A for the 12A versions. All four series operate across a temperature range of -55°C to +175°C and provide ESD capability in accordance with IEC 61000-4-2 air-discharge requirements.
The DFN6546A package’s wettable flanks support automated optical inspection, allowing solder joints to be inspected without X-ray equipment. The rectifiers are rated MSL 1 under J-STD-020, support a maximum lead-free peak temperature of 260°C, and are RoHS compliant and halogen-free.
Vishay is targeting the devices at power-line polarity protection and rail-to-rail protection in commercial, industrial and automotive systems. Samples and production quantities are available now, with lead times of eight weeks.
Original – Vishay Intertechnology
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MCC has introduced the MDTK072N60H, a 600V N-channel power MOSFET designed for high-voltage power conversion in industrial and infrastructure applications.
The device uses Super Junction MOSFET technology and provides a maximum RDS(on) of 72mΩ. It supports a continuous drain current of up to 24A, targeting applications where conduction losses and current-handling capability are important design considerations.
The MDTK072N60H has a total gate charge of 70nC, supporting switching-performance optimization in high-voltage power conversion circuits. MCC designed the device to reduce both conduction and switching losses in applications such as AC/DC power supplies and industrial converters.
Thermal performance is supported by a junction-to-case thermal resistance of 1.1°C/W. The MOSFET is housed in a compact TOLL-8L-KS surface-mount package designed to provide efficient heat transfer while limiting PCB space requirements.
Target applications include AC/DC power supplies, server power systems, industrial power conversion equipment and renewable energy systems.
The MDTK072N60H is halogen-free, RoHS compliant and rated at Moisture Sensitivity Level 1 (MSL 1).
Original – Micro Commercial Components
