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Okmetic has entered volume production at its expanded Vantaa fab in Finland. The site focuses on 150–200 mm silicon and bonded silicon-on-insulator (SOI) wafers, with the expansion significantly increasing 200 mm polished wafer capacity.
“With this expansion, Okmetic strengthens its position as an EU-based, one-stop supplier for 150 to 200 mm silicon wafer platforms serving the MEMS, sensor, RF, and Power markets. The increase in 200 mm polished wafer capacity strengthens long-term supply stability for critical semiconductor applications,” said President and CEO Kai Seikku.
Okmetic produced the first wafers from the expanded fab in June 2025, launching a structured qualification and ramp phase. With volume production now underway in early 2026, the company has started delivering wafers from the expanded capacity to customers, supporting long-term supply readiness across MEMS, RF, Power and GaN-based applications.
The Vantaa expansion is part of Okmetic’s broader plan to more than double capacity by 2030. Construction began in early 2023 and adds more than 40,000 m², including a 6,000 m² cleanroom as well as new crystal growth and wafering areas. Okmetic said the fab upgrade incorporates state-of-the-art equipment with a focus on energy efficiency.
The latest investment builds on prior capacity additions, including the doubling of bonded SOI production capacity between 2017 and 2021 and the introduction of a patterning line for Cavity SOI (C-SOI®) production in 2019. By expanding 200 mm polished wafer output, Okmetic aims to better meet evolving industry demand while reinforcing Europe-based supply of 150–200 mm wafer platforms.
Original – Okmetic
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Micro Commercial Components (MCC) expanded its power MOSFET lineup with the MCG052P10Y and MCAC054P10Y, two 100 V P-channel MOSFETs designed for high-current high-side switching in space-constrained power designs. The devices target common pain points in higher-voltage systems, including conduction losses, gate-drive complexity and thermal limits that can undermine efficiency and long-term reliability.
The MCG052P10Y is offered in a compact DFN3333 package, while the MCAC054P10Y comes in the higher-power DFN5060 footprint. Built on split gate trench MOSFET technology, both parts combine low RDS(on), strong current handling and low thermal resistance to reduce losses, limit switching stress and move heat efficiently into the PCB. With a 100 V drain-source rating, they are positioned as space-efficient building blocks for demanding power applications that require robust high-side switching.
Key features and benefits:
- Low RDS(on): 52 mΩ (max) for MCG052P10Y-TP and 54 mΩ (max) for MCAC054P10Y-TP at VGS = 10 V, reducing conduction losses
- Split Gate Trench MOSFET Technology optimized for low switching losses and high efficiency in high-side switching
- High current capability: 16 A continuous drain current (DFN3333) and up to 25 A (DFN5060)
- Low Thermal Resistance: Junction‑to‑case thermal resistance of 5°C/W (DFN3333) and 1.86°C/W (DFN5060) enables efficient heat dissipation through the PCB
- 100 V VDS rating suitable for higher-voltage power designs
Original – Micro Commercial Components
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Navitas Semiconductor introduced a 10 kW DC-DC reference platform designed to accelerate the shift toward high-voltage DC (HVDC) power architectures in AI data centers. The company said the platform reaches up to 98.5% peak efficiency at 1 MHz switching frequency, enabling higher power density for large-scale data center expansion.
The all-GaN design uses advanced 650 V and 100 V GaNFast FETs in a three-level half-bridge topology with synchronous rectification. In a full-brick form factor (61 × 116 × 11 mm), Navitas reports 98.5% peak efficiency and 98.1% full-load efficiency, delivering 2.1 kW/in³ power density.
Navitas positions the platform as production-oriented and compatible with both 800 V–to–50 V and ±400 V–to–50 V architectures at 10 kW. It integrates auxiliary power and control functions to simplify adoption and support compact, high-power-density module designs for next-generation HVDC AI data centers.
“The design platform enables the transition to HVDC data center power infrastructure, supporting the future power requirements of AI workloads that will demand between 100- and even 1,000-times more compute per query,” said Chris Allexandre, President and CEO of Navitas Semiconductor. “Navitas continues to redefine what’s possible in AI data center power, with the 10 kW DC-DC solution giving breakthrough efficiency, power density, and scalability to allow faster and cooler operation while making them more sustainable.”
The 10 kW DC-DC platform is currently being evaluated with key data center customers through collaborative development and is scheduled to debut publicly at APEC in San Antonio, Texas, March 22–26, at the Navitas booth (#2027).
Original – Navitas Semiconductor
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Infineon Technologies AG introduced the EiceDRIVER™ 1ED301xMC12I family, a series of high-performance isolated gate driver ICs featuring an opto-emulator input. The devices are pin-compatible with existing opto-emulators and optocouplers and are designed to deliver higher common-mode transient immunity (CMTI), a robust output stage, and more accurate timing than typical opto-based solutions. This allows engineers to migrate to SiC technology while keeping established opto-based control schemes and avoiding a redesign.
The 1ED301xMC12I portfolio includes three variants—1ED3010, 1ED3011 and 1ED3012—covering Si MOSFET, IGBT and SiC MOSFET use cases. Each device provides up to 6.5 A output current, supporting power modules and parallel switch configurations. The ICs are offered in a CTI 600 6-pin DSO package with more than 8 mm creepage and clearance. Insulation is certified to UL 1577 and is pending certification to IEC 60747-17.
For switching precision and robustness, the opto-emulator interface uses a two-pin input designed for high noise immunity. The family specifies CMTI greater than 300 kV/µs, a propagation delay of 40 ns, and timing matching below 10 ns to support consistent high-speed switching behavior. A pure PMOS sourcing stage is included to improve turn-on performance.
The 1ED3010MC12I, 1ED3011MC12I and 1ED3012MC12I are available now through Infineon and its distribution partners. Infineon also offers the EVAL-1ED3012MC12I-SIC evaluation board to simplify testing with Infineon switches.
Original – Infineon Technologies
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RIR Power Electronics Limited introduced a new family of Silicon Carbide (SiC) Merged-PiN Schottky (MPS) diodes, advancing power device performance for electric vehicles, industrial power systems, and energy infrastructure. By combining Schottky and PiN structures in a single monolithic device, the SiC MPS architecture addresses long-standing trade-offs between efficiency, high-voltage blocking, and ruggedness, delivering real-world reliability at high power and temperature.
Positioned for the next phase of global electrification across transportation, renewables, data centers, and industrial infrastructure, the devices leverage SiC’s inherent advantages—higher operating voltages, faster switching, and superior thermal behavior—to boost power density while reducing system losses.
Key advantages
- High surge current capability for inrush, short-circuit, and grid-disturbance events
- Low leakage at elevated temperatures for stable, predictable operation
- Improved avalanche and blocking robustness for DC-link and grid-tied systems
- Near-zero reverse recovery for ultra-fast, low-loss switching
- Higher system reliability with reduced need for snubbers, over-design, and derating
Target applications
- EVs and HEVs (traction, OBC, DC-DC)
- Data centers and AI power infrastructure
- Renewable energy and grid systems
- Industrial drives and motion control
- Aerospace and defense platforms
- Green hydrogen and electrolysis systems
“With our new 1200 V SiC MPS diodes, RIR is making high-performance Silicon Carbide more accessible, reliable, and deployment-ready,” said Dr. Harshad Mehta, Non-Executive Chairman, RIR Power Electronics Ltd. “Backed by decades of high-power semiconductor expertise, we are enabling designers worldwide to harness the full potential of SiC—confidently and efficiently—across the most demanding applications, including EVs, data centers, renewables, industrial systems, aerospace, and green hydrogen.”
Original – RIR Power Electronics
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Efficient Power Conversion (EPC) has begun volume production of the EPC2366, the first transistor in its seventh-generation eGaN® platform. Engineered to set a new performance bar, the device delivers up to 3× improvement over equivalent silicon MOSFETs, combining a typical RDS(on) of 0.84 mΩ with an optimized RDS(on) × QG figure of merit of 12.6 mΩ·nC to simultaneously cut conduction and switching losses and improve thermal behavior.
Targeted at high-efficiency, high-density systems, EPC2366 is suited for synchronous rectification, high-density DC-DC conversion, AI server power supplies, and advanced motor drives. It supports 40 V drain-to-source operation and 48 V transients, with continuous drain current up to 88 A and pulsed current to 360 A. Thermal performance is aided by a compact 3.3 × 2.6 mm PQFN package featuring a junction-to-case thermal resistance of 0.6 °C/W.
“We have developed a seventh-generation GaN platform that creates a new state-of-the-art in power transistor performance. The 40 V, EPC2366 is the first of this family to enter mass production. However, EPC is sampling seventh-generation 25 V and 15 V transistors now and expects more mass production transitions in the first half of 2026,” said Alex Lidow, CEO and co-founder of EPC.
To speed evaluation, EPC offers the EPC90167 half-bridge board integrating two EPC2366 devices in a low-parasitic layout. It supports standard PWM drive signals and flexible input modes, providing a practical reference platform for real-world assessments in fast, high-current power stages.
Original – Efficient Power Conversion
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Wolfspeed, Inc. introduced its TOLT (TO-Leaded, Top-Side Cooled) package portfolio designed to deliver maximum power density for datacenter rack power supplies. By releasing heat from the top of the package, TOLT significantly improves cooling efficiency, enabling smaller, more reliable power systems that meet the rising demands of AI datacenters.
“AI is pushing datacenter OEMs to be incredibly strategic about the size and total efficiency of their power systems,” said Guy Moxey, vice president of Wolfspeed’s Industrial & Energy business. “Our TOLT product family offers a straightforward path to delivering higher-density, thermally optimized power systems capable of sustaining the demands of AI datacenters, and Wolfspeed’s Gen 4 technology helps these systems run cooler, more efficiently, and more reliably.”
Silicon carbide continues to outpace silicon in high-power applications, supporting gains in performance and system cost across AI datacenters, e-mobility, renewable energy, and battery energy storage. Wolfspeed’s U.S.-based silicon carbide substrate production underpins supply chain resilience and provides a stable domestic source for mission-critical power systems as large AI projects scale.
The initial 650 V TOLT products are available in multiple RDS(on) options, with additional details on Wolfspeed’s third top-side-cooled portfolio to follow in the second half of 2026.
Original – Wolfspeed
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Vishay Intertechnology, Inc. introduced five 1200 V MOSFET power modules built on its latest-generation silicon carbide (SiC) technology and housed in the fully insulated, compact SOT-227 package. The new Vishay Semiconductors devices—VS-SF50LA120, VS-SF50SA120, VS-SF100SA120, VS-SF150SA120, and VS-SF200SA120—deliver best-in-class forward voltage drop down to 0.83 V to cut conduction losses and raise system efficiency.
Offered in single-switch and low-side chopper configurations, each module integrates a SiC MOSFET with a soft body diode to minimize reverse-recovery charge, reducing switching losses in medium- to high-frequency designs. Target applications include solar inverters; off-board EV chargers; SMPS, DC/DC converters, UPS and HVAC systems; large battery storage; and telecom power supplies.
The SOT-227 form factor enables drop-in replacement for competing modules without PCB changes. Its molded, fully insulated design provides electrical isolation up to 2500 V for one minute, which can lower system cost by eliminating separate insulation between the device and heatsink.
Key characteristics include continuous drain current ratings from 50 A to 200 A, low on-resistance down to 12.1 mΩ, high-speed switching with low capacitance, and a maximum operating junction temperature of +175 °C. The devices are RoHS-compliant and UL-approved (file E78996).
Device highlights:
- VS-SF50LA120 — 1200 V, 50 A, 43 mΩ, low-side chopper, SOT-227
- VS-SF50SA120 — 1200 V, 50 A, 47 mΩ, single switch, SOT-227
- VS-SF100SA120 — 1200 V, 100 A, 23 mΩ, single switch, SOT-227
- VS-SF150SA120 — 1200 V, 150 A, 16.8 mΩ, single switch, SOT-227
- VS-SF200SA120 — 1200 V, 200 A, 12.1 mΩ, single switch, SOT-227
Samples and production quantities are available now with 13-week lead times.
Original – Vishay Intertechnology
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Alpha and Omega Semiconductor Limited (AOS) introduced its αMOS E2™ 600 V Super Junction MOSFET platform and the first device from the family, the AOTL037V60DE2. Targeted at servers, workstations, telecom rectifiers, solar inverters, motor drives and industrial power systems, the platform addresses the core requirements of modern mid- to high-power SMPS and inverter designs: higher efficiency, greater power density, lower system cost and robust operation.
Engineered with a robust intrinsic body diode, αMOS E2™ reliably handles hard-commutation events—such as body-diode reverse recovery during short-circuits or start-up transients—to enhance system resilience. The AOTL037V60DE2, offered in a TOLL package, features a maximum RDS(on) of 37 mΩ. AOS application evaluations demonstrated body-diode ruggedness withstanding di/dt of 1300 A/µs under specified forward-current conditions at a junction temperature of 150 °C. Testing also confirmed superior Avalanche Unclamped Inductive Switching (UIS) capability and longer Short-Circuit Withstanding Time (SCWT) versus competing MOSFETs, translating into stronger system-level reliability under abnormal operating scenarios.
The platform is optimized for critical high-voltage topologies, including the slow leg of totem-pole PFC, LLC resonant converters, PSFB and cyclo-converters, helping designers meet stringent efficiency and power-density targets while maintaining robustness.
Technical highlights
• Optimized for soft-switching topologies with exceptionally low switching losses
• Rugged body diode with reduced Qrr for demanding, high-stress applications
• Enhanced robustness with strong UIS, inrush handling and wide SOA
• Designed to prevent self-turn-on for reliable operation under dynamic conditions
• Suitable for Totem Pole PFC, LLC, PSFB and CrCM H-4/Cyclo Inverter applicationsOriginal – Alpha and Omega Semiconductor
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CISSOID announced the CMT-PLA1BL12300MA, a 1200 V / 300 A half-bridge IGBT power module that pairs advanced switching technology with a widely adopted industry-standard CPAK-EDC package. The new module targets reliable, cost-effective upgrades in industrial power conversion, offering drop-in compatibility, enhanced mechanical robustness and greater design flexibility.
Engineered for high-frequency, high-performance systems—including UPS, motor and motion control, and industrial power supplies—the module leverages Trench Gate Field Stop (TG-FS) IGBT technology to balance switching speed and conduction losses while maintaining excellent short-circuit behavior. A high-surge freewheeling diode supports transient and overload events, and market-leading thermal conductance helps move heat quickly to boost power density and extend lifetime margins.
Key benefits:
- High efficiency with low saturation voltage and optimized switching to minimize dissipation
- Robust performance with continuous current capability up to 450 A and extended temperature margins
- Seamless integration via the CPAK-EDC industry-standard package for drop-in upgrades
- Reduced EMI from a fast, soft-recovery integrated diode, simplifying system design
Key technical features:
- Configuration: 1200 V / 300 A half-bridge IGBT power module
- Continuous DC current: 450 A (@ Tj = 90 °C)
- Low VCE(sat): 1.56 V (@ IC = 300 A, Tj = 25 °C); 1.78 V (@ IC = 300 A, Tj = 150 °C)
- Switching losses: Eon = 34 mJ, Eoff = 34.5 mJ (@ Tj = 150 °C)
- Thermal resistance: RθJC = 0.065 °C/W (IGBT); 0.1 °C/W (diode)
With this addition, CISSOID broadens its catalog of standard modules, giving designers proven building blocks to accelerate innovation in electric drives and industrial power conversion.
Original – CISSOID
