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Infineon Technologies AG has introduced its new OptiMOS™ 8 100 V power MOSFET technology, designed to address the increasing power handling requirements driven by megatrends such as green mobility, robotics, and artificial intelligence. The latest generation of OptiMOS technology incorporates application-specific optimizations for RDS(on)-focused applications, including motor control systems and battery protection solutions.
Compared to the previous OptiMOS 5 generation, the new OptiMOS 8 100 V technology delivers up to 44% lower RDS(on), improving both performance and cost efficiency. According to Infineon, these improvements enable up to 18% higher peak current output in motor drive inverter applications, establishing a new benchmark for this class of devices.
For static switching applications such as battery protection circuits in battery management systems (BMS), the reduced RDS(on) supports higher power density, lower component count, and improved thermal performance.
As AI data centers continue to expand and operate at higher power levels, battery backup units (BBUs) are facing increasing power density requirements. Infineon states that the OptiMOS 8 100 V technology is designed to support these demands by enabling higher power density in high-power BBU systems.
The new MOSFET family features a tightly controlled threshold voltage variation (ΔVGS(th)) of less than 0.8 V combined with low transconductance (gfs), characteristics that contribute to optimized current sharing and enhanced system reliability.
To address a broad range of end applications, the OptiMOS 8 100 V portfolio is offered in multiple package options, including clip-based packages such as the TOLL with Copper Clip and the established SuperSO8 5×6 package. These package technologies are designed to provide improved thermal performance while supporting compact system designs.
Infineon has also introduced a reference design demonstrating the capabilities of the new technology in a practical application. The design combines OptiMOS 8 100 V MOSFETs with XENSIV™ TMR current sensors and a PSOC™ Control C3 microcontroller to implement field-oriented control (FOC) for battery-powered drone applications. The platform is designed as a ready-to-use solution for electronic speed controller (ESC) development.
The OptiMOS 8 100 V product family will be available beginning in June.
Original – Infineon Technologies
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Infineon Technologies AG has unveiled EasyPACK™ S, a new compact power module and packaging concept developed to address growing demand for higher power density in space-constrained applications. Introduced at PCIM Europe 2026, the new platform is designed for applications such as electric vehicle onboard chargers and power supplies for AI data centers, where compact size, thermal performance, and efficiency are critical requirements.
EasyPACK S features a package height of just 5.6 mm and a footprint of approximately 33 × 36 mm², enabling significant system miniaturization while maintaining reliable thermal performance and reduced electromagnetic interference (EMI). The first modules in the new package family integrate Infineon’s CoolSiC™ MOSFET 1200 V Generation 2 technology, as well as 1200 V IGBT4 and IGBT7 devices.
The new module platform has been qualified according to the latest industrial and automotive standards. By incorporating Infineon’s .XT interconnection technology, EasyPACK S delivers enhanced reliability and extended operational lifetime. An integrated direct bonded copper (DBC) substrate provides stable thermal characteristics and uniform temperature distribution across the module.
Infineon has also implemented a new plastic material and silicone gel, allowing the modules to support continuous operating junction temperatures of up to Tvj(op) = 175°C. In addition, PressFIT pin technology doubles current-carrying capability while simplifying PCB assembly.
The package has been engineered to support automated manufacturing processes through features such as defined gripping areas, alignment holes, and reduced pin-to-pin tolerances. These design elements help streamline production while reducing manufacturing time and cost.
EasyPACK S has been developed as a scalable platform capable of supporting future silicon carbide and gallium nitride power devices while meeting demanding lifetime and reliability requirements. The platform architecture offers flexibility across semiconductor technologies, chip configurations, topologies, and power classes, enabling designers to optimize performance and accelerate product development.
The first EasyPACK S modules incorporating CoolSiC MOSFET G2 and IGBT4 technologies are scheduled to become available in July. The products are being showcased at Infineon’s booth during PCIM Europe 2026 in Nuremberg.
Original – Infineon Technologies
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Infineon Technologies AG has introduced a new family of silicon carbide (SiC) bidirectional switches (BDS) based on its 750 V CoolSiC™ Generation 2 technology. The new devices integrate two power switches into a single component through a vertically integrated dual-die, common-drain architecture housed in a top-side-cooled Q-DPAK package, simplifying system design and enabling new power conversion topologies.
The 750 V CoolSiC BDS is designed to support modern power systems requiring high efficiency, reliability, and long-term operational robustness. According to Infineon, the devices deliver strong performance across key switching parameters, including optimized RDS(on) × Qrr, low RDS(on) × QOSS, and low gate charge (Qg), helping to reduce both switching and conduction losses while enabling ultra-fast switching operation.
The devices feature a typical gate threshold voltage (VGS(th)) of 4.5 V at 25°C and an ultra-low QGD/QGS ratio that improves immunity against parasitic turn-on. In addition, an extended transient gate-bias tolerance ranging from -11 V to +25 V increases design margin and compatibility with existing gate-driver solutions. Rated for dv/dt performance up to 200 V/ns, the devices support high-frequency switching applications while maintaining durability and reliability. The initial product portfolio will cover on-resistance values ranging from 14 mΩ to 66 mΩ.
Designed for demanding power conversion environments, the 750 V CoolSiC BDS offers a breakdown voltage of 840 V, providing additional margin for systems operating at bus voltages above 500 V. The devices also feature proven avalanche robustness, overload endurance up to 200°C for 100 hours, and a short-circuit withstand capability of 2 µs. These characteristics help protect systems from voltage surges, transient stress, energy pulses, and inrush current events, supporting fault-tolerant operation over the product lifetime.
The new bidirectional switches further expand Infineon’s top-side-cooled product portfolio and support native liquid-cooling implementations in high-power applications. The company notes that the technology enables new levels of energy efficiency through the adoption of advanced power conversion topologies.
In automotive applications, the 750 V CoolSiC BDS is intended for onboard chargers (OBCs), EV charging systems, eFuse implementations, and pre-charge circuits. When combined with Infineon’s CoolSiC H-DPAK half-bridge devices, the solution supports the transition toward single-stage silicon carbide-based onboard charger architectures, enabling compact, high-power-density designs with improved space and cost efficiency.
For industrial applications, the technology is targeted at a range of emerging use cases, including:
• HVDC AI power supplies with native liquid cooling
• Residential solar and energy storage systems
• HVAC systems for hospitals and onsite data centers
• Current source inverter (CSI) drives for eVTOL platforms
• HVDC protection systems for power infrastructure and IT racks
• Fast-charging systems for humanoid robot fleets
Sampling of the 750 V CoolSiC bidirectional switch family has already commenced.
Original – Infineon Technologies
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Infineon Technologies AG has introduced the H-DPAK, a new addition to its top-side cooling package portfolio that integrates half-bridge devices based on 750 V CoolSiC™ Generation 2 technology. Designed to address evolving requirements in automotive and industrial power conversion systems, the new package combines high-performance silicon carbide technology with a compact, scalable form factor optimized for advanced power architectures.
The H-DPAK integrates a complete unidirectional half-bridge power stage within a single package. It incorporates a split lead-frame design with optimized drain pads that improve heat spreading and support clearance compliance in dense, high-power layouts. The package also maintains the industry-standard 2.3 mm height used by Infineon’s established Q-DPAK and TOLT packages, enabling seamless board-level integration and drop-in compatibility.
The new package is designed for liquid-cooling-ready systems and helps reduce parasitic loop inductance, supporting cleaner high-speed switching operation. By enabling higher switching frequencies, the H-DPAK contributes to reduced passive component size and improved overall system efficiency while leveraging the performance characteristics of CoolSiC technology, including optimized RDS(on) × QOSS and RDS(on) × Qrr performance, as well as robustness under avalanche, overload, and short-circuit conditions.
Infineon positions the H-DPAK half-bridge as a core switching building block that can be adapted to a broad range of power conversion topologies. Its integrated architecture supports more compact designs where board space utilization and total cost of ownership are key considerations. Compared with discrete board-level solutions, the H-DPAK enables higher switching frequencies, improving dynamic performance and allowing more compact magnetic components.
Target applications include:
• Next-generation HVDC AI power supply units utilizing five-level active neutral point clamped (5L ANPC) topologies
• HVDC battery and capacitor backup units
• Solid-state transformers
• Residential solar and energy storage systems
• Humanoid robot charging systems
• Two-stage and single-stage onboard chargers (OBCs)
• DC-DC converters
• Auxiliary power systems for electric vehicles (xEVs)
The integrated 750 V CoolSiC G2 technology features low gate charge (Qg) to reduce gate-drive losses, high dv/dt capability for high-frequency operation, and wide gate-bias tolerance that enhances design margins while supporting compatibility with existing gate-driver architectures. These characteristics make the solution suitable for high-power automotive and industrial applications where switching efficiency and robustness are critical.
With the introduction of the H-DPAK, Infineon further expands its top-side cooled packaging portfolio, providing a solution designed to support native liquid cooling and the increasing performance demands of next-generation power conversion systems.
Samples of the H-DPAK devices are available now.
Original – Infineon Technologies
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Infineon Technologies AG has introduced three new variants of its CoolSET™ System-in-Package (SiP) family — the ICE188LM, ICE189LM, and ICE180LM — expanding the supported output power range and helping household appliance manufacturers meet increasingly stringent European energy efficiency and standby power regulations.
The CoolSET SiP combines a high-voltage MOSFET with a PWM controller on the primary side, a synchronous rectification (SR) controller on the secondary side, reinforced galvanic isolation, and comprehensive protection functions within a single package. This high level of integration reduces system losses, lowers component count, and simplifies the development of energy-efficient auxiliary power supplies for household appliances with power ratings up to 150 W.
The new devices are designed for major white goods applications, including washing machines, refrigerators, dishwashers, dryers, and ovens, where compliance with EU Ecodesign and standby power requirements is mandatory for market access. The solution supports standby and no-load power consumption as low as 30 mW while maintaining high efficiency across the entire operating range, providing appliance manufacturers with a path to regulatory compliance without compromising system performance.
As EU Ecodesign regulations continue to tighten and expand across additional appliance categories, auxiliary power supply design has become an increasingly important factor in achieving compliance. Infineon’s CoolSET SiP addresses these requirements by integrating key power conversion and control functions into a single qualified package. This approach reduces the number of external components, simplifies electromagnetic interference (EMI) management, and optimizes switching behavior and protection features to meet current and upcoming efficiency targets.
According to Infineon, manufacturers can benefit from reduced design complexity, shorter qualification cycles, and a scalable platform architecture that supports regulatory compliance across multiple product variants and power levels within the same appliance family.
The CoolSET SiP family is also designed to address the long product lifecycles and high-volume platform requirements typical of the white goods market. By offering a fully integrated solution qualified to meet current EU regulatory requirements, Infineon enables appliance manufacturers to shorten development timelines and reduce the engineering effort associated with adapting products to evolving regulatory standards.
The solution supports broader EU sustainability objectives by helping manufacturers meet both active-mode efficiency requirements and increasingly strict limits on standby and off-mode power consumption for appliances sold within the European market.
The ICE188LM, ICE189LM, and ICE180LM are available immediately. Product documentation and additional design resources are available through Infineon.
Original – Infineon Technologies
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Power Integrations has introduced two new ultra-slim auxiliary power supply reference designs developed for 800 VDC AI data center applications. The designs are optimized for NVIDIA’s Kyber liquid-cooled blade-rack architecture and are intended to reduce space requirements, simplify system design, and improve reliability in high-voltage AI infrastructure.
The first design is a single-output 15 W auxiliary power supply measuring just 30 mm × 30 mm with a profile height of 7 mm. The second is an isolated six-rail 35 W design measuring 80 mm × 60 mm with an 8 mm profile. According to Power Integrations, the compact solutions can free up approximately 30% of board space on densely populated main power distribution boards (PDBs) while reducing bill-of-materials (BOM) count by an estimated 30%, contributing to simplified designs and enhanced system reliability.
Both reference designs achieve efficiency levels of at least 88% across line and load conditions.
“As the only company offering single-HEMT 1700 V GaN devices, Power Integrations can design these best-in-class, highly efficient flyback converters with a low BOM count while maintaining wide safety margins on an 800 V bus,” said Jason Yan, Senior Training Manager at Power Integrations. “The only alternative solutions are discrete, costly silicon carbide (SiC) devices which require 30% more components and space to operate.”
The newly released design examples describe 35 W and 15 W flyback auxiliary power supplies intended for high-voltage AI data center environments. These compact power supply units provide power for internal system components such as microcontrollers, gate drivers, and operational amplifiers that perform essential control, monitoring, and housekeeping functions required for system safety, reliability, and efficiency.
Both designs are based on Power Integrations’ InnoMux™-2 ICs incorporating 1700 V-rated PowiGaN™ gallium nitride technology. The InnoMux-2 devices support nominal input voltages up to 1000 VDC in a flyback topology and can deliver up to 90% flat efficiency in discontinuous conduction mode (DCM) while maximizing power delivery performance.
Power Integrations has made both reference designs available for download:
• DER-1110 – a 35 W multi-output flyback auxiliary power supply based on the IMX2353F, designed for high-voltage AI data center applications.
• DER-1114 – a 15 W single-output flyback auxiliary power supply based on the IMX2353F, also targeted at high-voltage AI data center applications.
The new designs leverage Power Integrations’ 1700 V PowiGaN technology to deliver compact, low-profile auxiliary power solutions for emerging 800 VDC AI data center architectures.
Original – Power Integrations
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Infineon Technologies AG has achieved a significant milestone in automotive power electronics with the introduction of a new 1300 V silicon carbide module within its HybridPACK™ Drive family, capable of continuous operation at junction temperatures up to 205°C.
The new module raises the temperature limit well above the typical 175°C threshold used in current automotive inverter designs. This advancement enables automotive OEMs and Tier 1 suppliers to extract higher peak and continuous power from existing inverter platforms or reduce cooling requirements and system complexity in next-generation designs.
A key benefit is the ability to deliver up to 15% higher output current compared with existing SiC modules, directly increasing inverter power density. Importantly, the new device maintains the same package dimensions, interfaces, and footprint as current HybridPACK Drive products, allowing seamless integration into existing vehicle platforms without major redesign efforts.
The module also introduces a 1300 V blocking voltage—the first within the HybridPACK Drive family—providing additional voltage margin and robustness for future electric vehicle architectures operating beyond 900 V battery systems. This positions the technology for next-generation high-voltage EV platforms that require greater efficiency and charging performance.
The first production device featuring the new capability, FS01M9R13A7MA2B, is already available to the market, with Infineon planning to extend the 205°C operating capability across its broader 1200 V SiC HybridPACK Drive portfolio.
Original – Infineon Technologies
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Toshiba Electronic Devices & Storage Corporation has developed a new trench-gate silicon carbide (SiC) MOSFET technology that simultaneously reduces on-resistance and improves short-circuit robustness, addressing one of the key trade-offs in high-performance SiC power devices.
The innovation centers on optimizing the bottom p-well structure beneath the trench gate and refining the design of the junction field-effect transistor (JFET) region, including its width and doping concentration. By narrowing the JFET width and increasing doping levels, Toshiba demonstrated suppression of short-circuit current and reduced short-circuit energy generation inside the device.
The company confirmed that this approach lowers internal temperature rise during fault events while maintaining gate oxide reliability, a critical requirement for long-term SiC device durability. Prototype devices achieved approximately 25% lower on-resistance compared with conventional trench-gate SiC MOSFETs while preserving short-circuit robustness.
This development is particularly important because trench-gate SiC MOSFETs are widely favored for their low conduction losses and high current density, but balancing efficiency with short-circuit survivability has remained a major design challenge. Toshiba’s findings establish a new design methodology focused on minimizing short-circuit energy as a path toward improved reliability and efficiency.
The technology targets demanding high-efficiency power conversion applications including electric vehicles, renewable energy systems, industrial power supplies, and AI data center infrastructure, where both efficiency and fault tolerance are critical.
Commercialization is already underway, with test samples of the 1200 V trench-gate SiC MOSFET “TW007D120E” shipping earlier this month. Toshiba will present additional technical details at ISPSD 2026 in Las Vegas.
Original – Toshiba
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USI has unveiled a new advanced power semiconductor packaging technology platform that embeds silicon carbide (SiC) dies into multilayer ABF substrates while integrating ceramic insulation and wire-bondless architectures into industry-standard power module packages.
The new technology combines SiC chip embedding with Single-Side Copper Exposed (SSC) packaging to deliver lower stray inductance, reduced conduction resistance, and improved thermal performance. By integrating ceramic substrate insulation directly into the package structure, USI eliminates the need for additional isolation components while maintaining electrical reliability and compact form factors.
A key innovation is the adoption of a wire-bondless architecture, which improves current handling and thermal dissipation while enabling larger die integration within slimmer package footprints. Compared with traditional wire-bonded module designs, the approach reduces conduction losses, lowers heat generation, and enhances long-term reliability — all critical requirements for high-power-density applications such as AI data centers, electric vehicles, and humanoid robotics.
USI is positioning itself beyond traditional EMS manufacturing by expanding into higher-value power module integration and advanced packaging services. The company also emphasized its broader automotive powertrain capabilities, including 400 V/800 V inverter systems, intelligent battery disconnect units (iBDUs), and integrated OBC/DC-DC solutions.
The technology aligns with broader industry trends toward highly integrated, thermally optimized power systems for electrification and AI infrastructure. USI plans to showcase the new packaging platform and related power solutions at PCIM Europe 2026.
Original – USI
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Microchip Technology has introduced new 3.3 kV HV-D3 mSiC® power modules aimed at accelerating adoption of solid-state transformer (SST) architectures in AI hyperscale data centers and other high-voltage power applications.
The modules integrate 3.3 kV silicon carbide (SiC) MOSFETs and Schottky diodes in an industry-standard 62 mm package, enabling more direct conversion from medium-voltage grid infrastructure to server rack power systems. The launch reflects growing industry interest in reducing power-conversion stages as AI compute clusters continue to push power requirements into multi-megawatt territory.
The HV-D3 modules are built around Microchip’s mSiC technology and incorporate features designed for high-voltage operation, including 6 kV isolation capability, CTI 600-rated materials, extended creepage distances, and a silicon nitride (Si₃N₄) substrate for improved thermal performance and power-cycling reliability. The higher voltage rating enables designers to reduce the number of series-connected devices by roughly half compared with lower-voltage SiC alternatives when interfacing with 13.8 kV and 34.5 kV grid systems.
The product family targets the 100–300 A range, a segment positioned between discrete SiC devices and larger power modules. Available configurations include half-bridge and common-source topologies, with optional anti-parallel Schottky diodes, supporting both hard-switching and soft-switching applications.
Beyond AI infrastructure, the modules address multiple high-power markets including megawatt EV charging systems, medium-voltage motor drives, rail and heavy transportation, and industrial and defense power systems.
Original – Microchip Technology
