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Toshiba Electronics Europe GmbH has announced the introduction of three new 40 V N-channel power MOSFETs for automotive applications. The new devices include the XPMR5904PB, which is available immediately, and the XPMR7404PB and XPMR8504PB, which are scheduled for release shortly. The products utilize Toshiba’s newly developed SOP Advance(EWF) package and are designed for demanding automotive systems such as inverters, semiconductor relays, load switches, and motor drives.
A key feature of the new devices is the adoption of the SOP Advance(EWF) package, which incorporates a post-less internal structure. Instead of using conventional internal posts, the package connects the semiconductor chip to the external leads through a copper clip. This design reduces the resistance of the current path by eliminating internal posts and optimizing current flow within the package.
The devices also employ a source-coupled structure that connects source terminals on the reverse side of the package, increasing the contact area with the PCB land pattern. This approach expands the available chip mounting area while enhancing current-carrying capability.
As a result, the XPMR5904PB achieves a continuous drain current rating of 180 A, representing a 20% increase compared with existing products that use similar SOP Advance(WF) packaging.
Toshiba has also improved key electrical and thermal performance characteristics to meet the requirements of high-current automotive applications. Compared with the company’s existing XPHR7904PS device, the XPMR5904PB delivers approximately 25% lower drain-source on-resistance (RDS(ON)) and approximately 38% lower channel-to-case thermal impedance (Zth(ch-c)). These improvements help reduce power losses and support higher system efficiency.
To enhance manufacturing quality and inspection reliability, the SOP Advance(EWF) package incorporates a wettable flank structure. This surface-mount package design improves visibility of solder joints, allowing automated optical inspection (AOI) systems to more easily verify soldering quality during production. The feature supports automated manufacturing processes while helping manufacturers meet the stringent quality and reliability requirements of the AEC-Q101 automotive qualification standard.
The introduction of the new MOSFETs expands Toshiba’s automotive power semiconductor portfolio and provides additional options for designers developing high-performance automotive power systems. The devices are intended to support applications requiring higher current capability, improved thermal management, and enhanced manufacturing reliability.
Toshiba stated that it will continue expanding its power semiconductor portfolio and developing advanced automotive MOSFET technologies to support a broad range of vehicle applications while contributing to ongoing electrification and carbon reduction initiatives.
Original – Toshiba
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Vishay Intertechnology, Inc. has introduced the VS-HOT200C080, a new 200 A power module designed to reduce board space requirements and improve efficiency in 48 V traction inverters for light electric vehicles (LEV) and belt-start generator/recuperation systems used in mild-hybrid electric vehicles (MHEV).
For these applications, the Vishay Semiconductors VS-HOT200C080 can reduce board space requirements by up to 15% compared with conventional discrete-component solutions. The integrated module also incorporates MOSFETs featuring an on-resistance of 0.45 mΩ, helping to reduce conduction losses by 32% compared to competing solutions.
The VS-HOT200C080 integrates 80 V MOSFETs in a half-bridge configuration, along with a shunt resistor for current sensing, bypass capacitors to improve switching performance, and an NTC thermistor for temperature monitoring. These components are housed within an insulated 30 mm × 22.8 mm transfer-molded FlatPAK HC0 package that incorporates an electrically isolated exposed direct bonded copper (DBC) substrate.
According to Vishay, the module’s transfer-mold technology supports reliable operation across a wide temperature range from -55°C to +175°C, particularly under power-cycling conditions. The device is designed to meet the demanding reliability requirements of the AQG-324 qualification standard.
The HC0 package incorporates signal pins and power tabs positioned at different heights, enabling designers to separate power and signal PCBs. This arrangement simplifies system design and routing while providing the option to stack the signal and power boards to further reduce overall space requirements.
Samples and production quantities of the VS-HOT200C080 are available immediately, with lead times currently quoted at 13 weeks.
Original – Vishay Intertechnology
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Navitas Semiconductor announced its participation in NVIDIA’s Partner Ceremony held on May 29, 2026, at the Taipei Nangang Exhibition Center. The event brought together ecosystem partners supporting the NVIDIA AI Factory MGX™ platform, highlighting industry collaboration aimed at advancing next-generation AI data centers based on emerging 800 VDC rack architectures.
As part of the NVIDIA AI Factory MGX™ Ecosystem Showcase at COMPUTEX 2026 in Taipei, taking place from June 2–5, Navitas is demonstrating its 800 V-to-6 V DC-DC power delivery board (PDB). Powered by the company’s GaNFast™ technology, the PDB eliminates the need for a traditional 48 V intermediate bus converter (IBC) stage within compute server trays, enabling greater system efficiency, reliability, and board-space utilization.
The power delivery board incorporates sixteen 650 V, 11 mΩ GaNFast FETs in the company’s latest DFN8×8 dual-cooled package. The design targets 97.5% peak efficiency while operating at a switching frequency of 1 MHz and achieving a power density of 2,100 W/in³. The ultra-low-profile design is approximately 20% thinner than a mobile phone, allowing close integration with GPU boards to enhance transient response and improve power distribution efficiency.
“As AI workloads continue to scale and drive unprecedented demand for compute, power delivery has become one of the most critical challenges in enabling next-generation gigawatt AI factories,” said Chris Allexandre, President and CEO of Navitas. “Through our collaboration with NVIDIA within the MGX™ ecosystem, Navitas is delivering GaN and SiC power technologies that enable megawatt-scale AI server racks with higher power density, a smaller system footprint, and improved thermal performance, helping accelerate the transition to more efficient and scalable AI infrastructure.”
Navitas also highlighted its portfolio of wide-bandgap power technologies designed to support next-generation AI factory infrastructure. The company’s GeneSiC™ silicon carbide (SiC) solutions address power delivery requirements from the electrical grid to AI compute racks, supporting applications such as solid-state transformers (SSTs) with 2300 V and 3300 V SiC power modules, as well as high-power three-phase power supply units based on its fifth-generation 1200 V SiC MOSFET technology.
According to the company, these SiC technologies contribute to improved efficiency, increased power density, and enhanced system reliability in large-scale AI data center deployments.
Navitas’ GaNFast technology is designed to provide the high-frequency, high-efficiency DC-DC power conversion required to support increasing power demands from AI accelerators and GPUs. By leveraging the switching performance of gallium nitride devices, the company’s solutions enable MHz-frequency operation, higher power density, and faster transient response, facilitating more efficient power delivery from the rack level to the processor level.
Through its portfolio of GaN and SiC technologies, Navitas continues to collaborate with NVIDIA within the MGX ecosystem to support open and modular AI infrastructure architectures and contribute to the development of next-generation AI factory platforms.
Original – Navitas Semiconductor
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Vincotech has introduced its new flow E3BP+ baseplate module, designed to deliver higher power density and enhanced reliability for photovoltaic (PV) and power conversion system (PCS) applications.
Building on the company’s established flow 2 and flow E3BP platforms, the flow E3BP+ incorporates several module-level enhancements aimed at improving overall system performance. Among the key advancements is the use of an optional silicon nitride (Si₃N₄) substrate, which provides improved mechanical robustness and thermal reliability. The module also supports operation at junction temperatures of up to 175°C.
According to Vincotech, these improvements contribute to increased power density and long-term durability, making the flow E3BP+ suitable for next-generation PV and PCS systems.
The new module features a convex 3 mm copper baseplate and is capable of handling transient overload conditions. It is also available with an optional pre-applied phase-change thermal interface material (PC-TIM) rated for operation up to 150°C.
Key features of the flow E3BP+ include:
- Optional Si₃N₄ substrate for enhanced mechanical and thermal reliability
- Junction temperature capability up to 175°C
- Support for transient overload conditions
- Convex 3 mm copper baseplate
- Optional pre-applied PC-TIM rated for 150°C operation
The flow E3BP+ module is targeted at a range of energy and power conversion applications, including photovoltaic inverters, battery energy storage systems (BESS), and power conversion systems (PCS).
Original – Vincotech
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Wise Integration will present its latest WiseWare®-powered AC-DC demonstration platforms at PCIM Europe 2026, taking place from June 9 to 11 in Nuremberg, Germany. The company will use the event to highlight its roadmap toward distributed digital control through the next generation of its WiseGan® Digital First power integrated circuits.
As a developer of digital control technologies for wide-bandgap and gallium nitride (GaN)-based power supplies, Wise Integration is positioning digital control at the center of next-generation power conversion architectures. The company believes this approach can help address the growing demand for higher switching frequencies, increased power density, and improved efficiency across applications such as AI infrastructure, electrification, edge computing, and space systems.
The increasing power requirements of AI data centers, electrified systems, edge computing platforms, and aerospace applications are creating new challenges for power conversion. While wide-bandgap technologies such as GaN and silicon carbide (SiC) have significantly improved switching performance, traditional analog control methods are becoming increasingly limited in their ability to fully translate device-level advancements into overall system-level benefits.
Wise Integration’s WiseWare® platform combines advanced digital control algorithms with GaN and SiC power stages to enable more precise converter operation. The technology is designed to optimize switching timing, support higher-frequency operation, and improve the management of efficiency, thermal performance, and passive component size.
“By leveraging standard microcontroller hardware to manage distributed digital control, we are removing the complexity that has historically limited scalability in premium applications,” said Ghislain Kaiser, CEO of Wise Integration. “This evolution allows us to deliver a unified, intelligent power solution specifically tailored for the rigorous demands of data centers, servers, electric vehicles, and edge AI.”
At PCIM 2026, the company will demonstrate several WiseWare®-controlled AC-DC power conversion platforms, including compact 240 W and 300 W designs, as well as higher-power 1 kW and 7 kW architectures. The demonstration boards showcase the scalability of the technology across a variety of power levels and converter topologies, including totem-pole power factor correction (PFC), LLC converters, single-stage architectures, and interleaved converter designs.
Building on these platforms, Wise Integration is advancing its digital control strategy through a more distributed power conversion architecture. The company will introduce its new WI73xxx generation at PCIM, representing a significant step toward the evolution of WiseGan® into a Digital First power IC platform.
The next generation of WiseGan® devices is designed to place more intelligence directly alongside the power switch, moving critical control functions such as protection, timing management, dead-time optimization, and zero-voltage switching control closer to the GaN power stage. According to the company, this approach enables faster response times, more accurate switching behavior, and improved overall efficiency and reliability.
Wise Integration also highlighted the upcoming WiseWare 2 platform, which introduces a new capability aimed at virtualizing the PFC stage. According to Ridha Hamza, Vice President of Sales, this functionality is expected to enable power density levels that significantly exceed those currently available in the market.
“By transitioning our distributed digital control strategy entirely onto MCU hardware within the new WiseGan generation, we are embedding critical intelligence directly into the power stage,” said Hamza. “This approach not only streamlines the design process for our customers but also unlocks unprecedented performance for high-end applications like AI servers and next-generation 800 V DC architectures, proving that the future of power conversion is not just about better components, but about smarter, fully integrated digital control.”
Together, WiseWare® and WiseGan® provide an integrated platform designed to help engineers reduce passive component size, lower bill-of-materials costs, improve protection response times, and achieve higher-performance power conversion. WiseWare® delivers software-defined intelligence at the controller level, while WiseGan® progressively integrates digital functionality directly into the power stage, enabling closer coordination between power devices and control systems.
The company stated that this roadmap supports its broader vision of distributed digital control in power electronics and is intended to enable a new generation of compact, efficient, and scalable power conversion solutions for AI infrastructure, electrification, premium consumer electronics, edge computing, space applications, and other high-performance markets.
Visitors to PCIM Europe 2026 will be able to view live demonstrations of the company’s latest technologies at Booth 243 in Hall 6.
Original – Wise Integration
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Infineon Technologies AG is expanding its CoolSiC™ JFET portfolio to address increasing demand from AI data centers and the growing adoption of solid-state power protection systems. The expanded portfolio includes new devices, package options, and configurations designed to support high-performance power distribution and protection applications.
The company announced that its first 750 V and 1200 V CoolSiC JFET devices in Q-DPAK packages, originally introduced last year, are now entering mass production. At PCIM Europe 2026, Infineon will also showcase additional package options and normally-off variants, further broadening its discrete power semiconductor offering for applications such as solid-state circuit breakers (SSCBs), battery disconnect switches, and power distribution systems used in AI data centers. Target applications include power supply units (PSUs), power backup units (PBUs), and intermediate bus converter (IBC) hot-swap and eFuse designs.
In these applications, power semiconductors spend most of their operating life in the on-state, while fault conditions occur only briefly and infrequently. As a result, conduction losses, linear mode robustness, and avalanche capability become critical performance parameters.
To address these requirements, Infineon is introducing a 1200 V CoolSiC JFET in the widely used TO-247-4 package. Offering on-resistance values starting at 5.0 mΩ, the device enables direct replacement in existing SiC MOSFET designs utilizing standard through-hole packages without requiring PCB redesign.
The company is also expanding the portfolio with normally-off CoolSiC JFET solutions that combine a CoolSiC JFET and an OptiMOS™ low-voltage silicon MOSFET within a single package.
The Dual Drive configuration provides independent access to both the SiC JFET and silicon MOSFET gates, allowing designers greater flexibility and control at the PCB level. The configuration also supports overdrive operation at VGS = 2 V, reducing RDS(on) by approximately 10%. The 750 V Dual Drive version is available in both TOLL and Q-DPAK packages, while the 1200 V variant is offered in Q-DPAK.
Infineon is also introducing a Cascode configuration, where the SiC JFET gate is internally connected and only the MOSFET gate is externally accessible. This design allows operation with standard gate drivers without requiring specialized gate-drive circuitry. The Cascode solution is targeted at applications where both switching and conduction losses are important design considerations. The 750 V Cascode version is available in a TOLL package.
The production-ready CoolSiC JFET devices in Q-DPAK packages offer RDS(on) values as low as 1.6 mΩ for the 750 V version and 2.3 mΩ for the 1200 V version, positioning them among the lowest-resistance SiC devices currently available in these voltage classes.
All devices are based on Infineon’s .XT interconnection technology utilizing diffusion soldering, which enhances thermal performance and improves robustness under pulsed and cyclic operating conditions. The devices are qualified under real-world operating environments to support reliable operation during overload and fault events.
According to Infineon, solid-state protection solutions based on CoolSiC JFET technology can achieve switching speeds that are orders of magnitude faster than traditional electromechanical protection systems. This capability helps reduce equipment damage, minimize downtime, and extend system operating life.
In AI data center environments, rapid fault isolation supports the protection of high-value computing and memory assets while enabling higher power density and improved uptime. For industrial applications, including solid-state circuit breakers, relays, and battery management systems, the devices provide long-term conduction reliability together with fast fault response capabilities.
With the addition of Q-DPAK, TO-247-4, and TOLL package options, as well as normally-on, Dual Drive, and Cascode configurations, Infineon now offers a comprehensive CoolSiC JFET discrete portfolio covering a broad range of on-resistance levels, gate-drive approaches, and assembly requirements.
The CoolSiC JFET 750 V and 1200 V devices in Q-DPAK packages are scheduled to enter mass production in 2026. Engineering samples of the additional TO-247-4, Dual Drive, and Cascode variants are currently available, with mass production also planned for 2026.
Infineon will showcase its expanded CoolSiC JFET discrete portfolio at PCIM Europe 2026 in Nuremberg, Germany, at Hall 7, Booth 470.
Original – Infineon Technologies
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Infineon Technologies AG has introduced two new system-level power solutions designed to address the evolving requirements of artificial intelligence (AI) data centers. The company unveiled an 18 kW three-phase power supply unit (PSU) reference design optimized for 50 V rack architectures and a 30 kW three-phase interleaved T-Type power factor correction (PFC) evaluation board developed for 800 VDC or ±400 VDC rack architectures with power sidecar configurations.
The two solutions are part of Infineon’s broader AI server power delivery portfolio and are intended to help server ODMs and OEMs accelerate development while achieving higher rack power, improved efficiency, and enhanced thermal performance.
As AI workloads continue to increase GPU power consumption and drive higher rack densities, data center power infrastructures are facing growing challenges. Infineon’s new designs are aimed at addressing these demands through advanced power conversion technologies and system-level integration.
The 18 kW PSU reference design incorporates a new integrated energy buffer concept that smooths power demand from the electrical grid during AI-related peak loads, eliminating the need for a separate capacitor bank unit. According to Infineon, this approach enables more efficient use of stored energy and reduces the required capacitor volume by up to 50%, lowering both component costs and system footprint.
The 30 kW PFC evaluation board utilizes Infineon’s CoolGaN™ semiconductor technology to achieve higher power density while reducing overall system cost, targeting data center operators expanding infrastructure to support increasing AI computing requirements.
The 18 kW PSU reference design achieves a peak efficiency of 97.5% through a combination of 650 V CoolSiC™ MOSFETs, 80 V CoolGaN™ switches, EiceDRIVER™ gate drivers, and a PSOC™ microcontroller. At the core of the system is a five-level active neutral-point clamped (ANPC) PFC topology, designed to deliver high efficiency across the full load range, particularly under low-to-medium load conditions, while reducing the size of magnetic components.
Infineon states that the ANPC topology provides a 0.2% higher peak efficiency at 50% load compared to a T-Type PFC design and a 0.4% improvement over a Vienna Rectifier topology.
The design also incorporates a novel integrated planar magnetic structure that enables a compact, modular, and scalable high-frequency transformer configuration. The integrated energy buffer provides a 20-millisecond hold-up time and supports GPU electrical data peak processing (EDPP) loads of up to 180%, meeting demanding AI load transient requirements.
The PSU accepts a wide three-phase input voltage range of 311 VAC to 528 VAC, allowing compatibility with global power grid standards. Thermal management has been engineered to support operation in ambient temperatures ranging from -5°C to 45°C.
Measuring 104 mm × 710 mm × 40 mm, the PSU is designed to fit standard 19-inch rack enclosures while delivering a power density of 100 W/in³.
The 30 kW T-Type PFC evaluation board combines 650 V CoolGaN™ bidirectional switches in the back-to-back switching path with 1200 V CoolSiC™ MOSFETs in the high-voltage power stage. The system achieves a peak efficiency exceeding 99%.
Power control is managed through the programmable power control accelerator (PPCA) integrated into the PSOC™ C3 microcontroller, enabling precise current and voltage regulation with fast dynamic response. The design maintains input current total harmonic distortion (iTHD) below 5% for loads above 30% and achieves a power factor greater than 0.99 across most operating conditions.
Current measurement is performed using the XENSIV™ TLE4978 isolated magnetic Hall plus Coil current sensor, which offers a bandwidth of 9 MHz, strong common-mode transient immunity (CMTI), and high measurement accuracy. These characteristics make the solution suitable for next-generation silicon carbide and gallium nitride-based power supply systems.
The modular platform is designed for integration into a 1U full-size PSU form factor and targets high-voltage DC data center applications requiring accurate voltage regulation and effective thermal management under the dynamic operating conditions associated with AI workloads.
Both designs are optimized for use with Infineon’s AI server power delivery portfolio, which spans the complete power chain from grid connection to processor core. The portfolio includes solid-state transformers, circuit breakers, power supply units, battery backup units, intermediate bus converters, and second-stage DC conversion power modules.
By combining silicon (Si), silicon carbide (SiC), and gallium nitride (GaN) technologies, Infineon provides a comprehensive platform for end-to-end power architectures supporting next-generation AI server infrastructure. The solutions are backed by scalable components, design resources, and system-level support aimed at accelerating deployment of advanced AI data center power systems.
Both the 18 kW three-phase PSU reference design and the 30 kW three-phase T-Type PFC evaluation board are expected to be available for evaluation in the near future.
Original – Infineon Technologies
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Infineon Technologies AG has introduced a 24 kW battery backup unit (BBU) DC-DC reference design for high-voltage (HV) DC bus architectures in artificial intelligence (AI) data centers. The solution is the first reference design of its kind to operate directly from a battery stack to an 800 V DC bus using both 650 V and 1200 V silicon carbide (SiC) technologies. It delivers a power density of 450 W/in³ and efficiency exceeding 99%, while maintaining the same physical form factor as current low-voltage BBU implementations.
The reference design addresses a key infrastructure challenge as data centers increasingly transition toward higher-voltage DC power distribution architectures.
“Powering AI at scale demands a systemic approach that optimizes every stage of the power delivery chain, from grid connection to the processor core,” said Magdalene Boebel, Senior Vice President and Business Line Head Power System ICs at Infineon. “Our 24 kW high-voltage BBU reference design, operating directly on an 800 V DC bus, sets a new benchmark in power density and efficiency, giving data center architects a fully integrated solution to meet the most demanding AI infrastructure requirements.”
The design is based on a multi-level, multiphase non-isolated architecture that combines stacked, interleaved, and coupled boost and buck stages. This architecture reduces magnetic component volume without relying on flying capacitors. A shared switching-leg topology creates a common current path between charge and discharge stages, enabling zero-voltage switching (ZVS) across the operating range.
According to Infineon, this approach reduces current ripple, supports fully integrated magnetics, and delivers fast transient response capabilities that are increasingly important as AI server power consumption becomes more dynamic and less predictable.
The compact module measures 112 mm × 88 mm × 118 mm and integrates a 24 kW main power stage together with a 2.4 kW auxiliary power supply. Charger and discharger sections share key components, including the EMI filter, capacitors, and protection MOSFETs, helping to reduce the overall component count. The design also incorporates silicon carbide junction gate field-effect transistors (JFETs) for ORing and hot-swap functionality, while a planar transformer combined with CoolSET™ technology implements the auxiliary switched-mode power supply in a compact footprint.
At the core of the DC-DC conversion stage is the CoolSiC™ MOSFET IMT65R033M2H, a 650 V device qualified for bidirectional buck-boost DC-DC operation in high-voltage BBU applications. The device’s low conduction and switching losses support conversion-stage efficiencies above 99%, reducing thermal load at rack level.
During grid disturbances, generator transitions, or power outages, the device enables rapid energy transfer between the HV DC bus and the battery with minimal losses. The IMT65R033M2H features a 650 V breakdown voltage rating, robust body diode, 175°C junction temperature capability, and Infineon’s .XT packaging technology to support operation under voltage spikes, high dv/dt transients, and continuous thermal cycling. Consistent gate-threshold voltage characteristics across devices also simplify multi-phase system design and support redundant rack configurations.
The architecture is documented in Infineon’s REF_12KW_HFHD_PSU reference design, which demonstrates the use of the IMT65R033M2H in high-power DC-DC stages for rack-level HV BBU applications.
The complete bill of materials includes CoolSiC 650 V Generation 2 MOSFETs, including the IMT65R033M2H, EiceDRIVER™ gate drivers, TLE497x current sensors, PSOC™ Performance line microcontrollers, CoolSET™ ICs for the auxiliary power supply, and a 1.7 kV SiC MOSFET.
Additional design features include reduced common-mode noise with negligible AC components and fully integrated magnetics. The design utilizes three power cards that provide mechanical connections for the positive DC, negative DC, and midpoint rails, while also serving as structural elements within the assembly, contributing to the solution’s compact footprint.
As data center operators move toward higher-voltage DC bus architectures to improve efficiency and reduce power distribution losses, battery backup units are becoming increasingly important for maintaining uninterrupted power delivery to AI servers during grid events. Infineon stated that the 24 kW HV BBU reference design demonstrates how silicon carbide-based DC-DC conversion can address the power density, efficiency, and reliability requirements of next-generation AI infrastructure.
The company’s broader power portfolio spans silicon (Si), silicon carbide (SiC), and gallium nitride (GaN) technologies, covering power conversion requirements across the entire power delivery chain from the electrical grid to the processor core.
Original – Infineon Technologies
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Infineon Technologies AG has introduced the EiceDRIVER™ 2EDL90xG3, a 120 V gate driver featuring a common footprint architecture that enables both silicon (Si) and gallium nitride (GaN) power designs to be implemented on the same PCB. The new driver is designed to simplify technology evaluation and accelerate the transition between Si and GaN solutions, particularly in high-density power applications such as AI data centers.
As AI data center power requirements continue to increase, power system designers are seeking greater flexibility to evaluate different semiconductor technologies without redesigning circuit boards. The 2EDL90xG3 addresses this challenge by supporting both 48 V and high-voltage intermediate bus converter (HV IBC) applications while minimizing redesign effort during technology migration. A built-in 5 V gate clamp further simplifies GaN gate-driver power supply design and contributes to improved system efficiency.
The 2EDL90xG3 offers five configurable operating modes, allowing support for a wide range of power conversion topologies. Its dual floating output architecture, combined with the integrated 5 V gate clamp, enables hybrid switched-capacitor (HSC) topologies for both silicon and GaN-based designs.
The device provides gate drive capability of 4 A source current and 6 A sink current, offering the performance required for driving the secondary stage of high-voltage intermediate bus converters. It also integrates a high-bandwidth current-sensing amplifier with a typical bandwidth of 5 MHz and common-mode voltage capability of up to 35 V. This integration reduces overall bill of materials (BoM) requirements while supporting higher power density.
The current-sensing amplifier delivers a typical full-scale accuracy of 1%, enabling precise control-loop regulation as well as rapid overcurrent and short-circuit protection. In addition, an integrated bootstrap diode helps reduce component count and board space in half-bridge and full-bridge converter designs.
The EiceDRIVER 2EDL90xG3 is housed in a compact 16-pin 3 mm × 3 mm QFN package.
Infineon has optimized the driver for use across its AI server power delivery portfolio, which spans the complete power chain from grid to processor core. This includes applications such as solid-state transformers, circuit breakers, power supply units, battery backup systems, intermediate bus converters, and second-stage DC power conversion modules.
By supporting silicon, silicon carbide (SiC), and gallium nitride technologies within a unified power architecture, the company aims to provide designers with a scalable path toward next-generation AI server power systems. The portfolio is supported by common design resources and a range of high-performance power components developed for emerging AI infrastructure requirements.
Samples of the 2EDL900G3 and 2EDL901G3 are available now.
Original – Infineon Technologies
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Infineon Technologies AG has introduced its new OptiMOS™ 8 100 V power MOSFET technology, designed to address the increasing power handling requirements driven by megatrends such as green mobility, robotics, and artificial intelligence. The latest generation of OptiMOS technology incorporates application-specific optimizations for RDS(on)-focused applications, including motor control systems and battery protection solutions.
Compared to the previous OptiMOS 5 generation, the new OptiMOS 8 100 V technology delivers up to 44% lower RDS(on), improving both performance and cost efficiency. According to Infineon, these improvements enable up to 18% higher peak current output in motor drive inverter applications, establishing a new benchmark for this class of devices.
For static switching applications such as battery protection circuits in battery management systems (BMS), the reduced RDS(on) supports higher power density, lower component count, and improved thermal performance.
As AI data centers continue to expand and operate at higher power levels, battery backup units (BBUs) are facing increasing power density requirements. Infineon states that the OptiMOS 8 100 V technology is designed to support these demands by enabling higher power density in high-power BBU systems.
The new MOSFET family features a tightly controlled threshold voltage variation (ΔVGS(th)) of less than 0.8 V combined with low transconductance (gfs), characteristics that contribute to optimized current sharing and enhanced system reliability.
To address a broad range of end applications, the OptiMOS 8 100 V portfolio is offered in multiple package options, including clip-based packages such as the TOLL with Copper Clip and the established SuperSO8 5×6 package. These package technologies are designed to provide improved thermal performance while supporting compact system designs.
Infineon has also introduced a reference design demonstrating the capabilities of the new technology in a practical application. The design combines OptiMOS 8 100 V MOSFETs with XENSIV™ TMR current sensors and a PSOC™ Control C3 microcontroller to implement field-oriented control (FOC) for battery-powered drone applications. The platform is designed as a ready-to-use solution for electronic speed controller (ESC) development.
The OptiMOS 8 100 V product family will be available beginning in June.
Original – Infineon Technologies
