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DB HiTek has completed reliability qualification of its 200mm (8-inch) wafer-based 1,200V SiC MOSFET process and is preparing to begin mass production in 2027. The company said it has established a complete 200mm SiC foundry process covering device design, manufacturing, electrical characterization and reliability verification.
The company is developing its SiC foundry services for power semiconductor applications including electric vehicles, renewable energy systems and industrial power equipment. While 150mm wafers currently account for the majority of SiC production, DB HiTek is developing its platform around 200mm wafers to support higher manufacturing efficiency and lower production costs.
DB HiTek has developed first- and second-generation 1,200V SiC MOSFET process design kits (PDKs), which are being provided to foundry customers. A third-generation PDK is scheduled for release in November 2026. According to the company, use of the PDKs could reduce customers’ product development cycles by more than one year by simplifying initial device development and accelerating prototype production.
The second-generation process achieves a specific on-resistance (Rsp) of 2.5mΩ·cm² or lower at a gate voltage of 18V, together with a threshold voltage (Vth) of at least 3V. DB HiTek has also completed reliability qualification for this process.
The third-generation process, scheduled to be released after qualification in November, targets an Rsp of 2.3mΩ·cm² or lower at the same 18V gate voltage. It is also being developed to achieve a short-circuit withstand time (SCWT) of at least 2.5µs within the short-circuit safe operating area (SCSOA).
DB HiTek said it has established what it describes as the world’s first complete 200mm 1,200V SiC foundry process. The platform is designed to provide customers with an integrated foundry service spanning device design support through fabrication, characterization and reliability testing.
The company plans to complete process preparations and initially make the technology available to existing foundry customers with which it has maintained multi-year collaborations during the third quarter of 2026. DB HiTek expects to open the 200mm SiC foundry service to all customers beginning in the second quarter of 2027, with volume production targeted for 2027.
Original – DB HiTek
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MCC has introduced the MCACL1D6N06YH, a 60V N-channel power MOSFET designed for high-current switching and power conversion in space-constrained industrial applications.
The device uses MCC’s Split Gate Trench MOSFET technology and provides a maximum RDS(on) of 1.6mΩ, reducing conduction losses during high-current operation. It supports a continuous drain current of up to 242A.
The MCACL1D6N06YH has a total gate charge of 84.2nC, balancing switching performance with the low on-resistance required for high-power applications.
Thermal performance is supported by a junction-to-case thermal resistance of 0.81°C/W. The MOSFET is housed in a compact PDFN5060 surface-mount package with an exposed thermal pad to improve heat transfer from the device.
The 60V MOSFET is intended for industrial motor drives, DC/DC converters and power-distribution systems, as well as industrial automation equipment, telecom power systems, brushless DC motor drives, server power supplies and robotics.
The combination of a 242A current rating, 1.6mΩ maximum RDS(on), Split Gate Trench architecture and thermally enhanced PDFN5060 packaging is designed to support high-current power conversion where PCB area and thermal management are constrained.
Original – Micro Commercial Components
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Alpha and Omega Semiconductor (AOS) has introduced two 600V αMOS E2 Super Junction MOSFETs targeting high-voltage power conversion applications, including servers, workstations, telecom rectifiers, solar inverters, motor drives and industrial power systems.
The new AOGT037V60DE2 and AOGT060V60DE2 are based on AOS’ αMOS E2 high-voltage MOSFET platform and use the company’s top-side-cooled GTPAK package. The devices are designed for applications requiring higher power density, efficient thermal management and increased system reliability.
The αMOS E2 platform provides body-diode ruggedness with a di/dt capability of 1500A/µs, along with avalanche unclamped inductive switching (UIS) capability and short-circuit withstand performance. The devices also feature a fast integrated body diode with reduced reverse-recovery charge and are designed to prevent unwanted self-turn-on under dynamic operating conditions.
AOS combines the αMOS E2 silicon technology with its GTPAK package, which transfers heat through a top-side cooling pad. This configuration separates the primary thermal path from the PCB, allowing designers to optimize heat dissipation while reducing the board area required for thermal management.
The GTPAK package also uses gull-wing leads to improve board-level mechanical reliability. According to AOS, co-optimizing the electrical and thermal paths is intended to improve power density and long-term reliability in mid- to high-power systems.
The AOGT037V60DE2 and AOGT060V60DE2 are designed for multiple power conversion topologies, including boost PFC, the slow-switching leg of totem-pole PFC, LLC resonant converters, phase-shifted full-bridge converters and critical-conduction-mode H-4/cyclo inverter designs.
AOS is positioning the devices for high-performance AC/DC power supplies, DC/DC converters and DC/AC solar inverters, where thermal management, electromagnetic interference and PCB space can constrain power density.
Original – Alpha and Omega Semiconductor
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Efficient Power Conversion (EPC) has started mass production of its 100V integrated GaN power-stage IC family, comprising the EPC23108, EPC23109, EPC23110 and EPC23111. The devices target high-performance motion control and power conversion applications including humanoid robots, drones and industrial motor drives.
The monolithic ePower Stage ICs integrate high-side and low-side eGaN FETs, gate drivers and level-shifting circuitry in compact, thermally enhanced QFN packages. The family supports operation up to 100V, with current ratings of 35A and 20A depending on the device.
The integrated power stages incorporate fast fault shutdown, safe gate control during power-loss conditions and support for continuous operation at 100% duty cycle. EPC also offers single-input PWM variants intended to simplify control in multi-axis motor drive systems.
Alongside the production launch, EPC is offering the EPC91128, EPC91129, EPC91130 and EPC91131 three-phase BLDC motor drive evaluation boards. The boards are based on the four new ePower Stage ICs and integrate gate drivers, current and voltage sensing, housekeeping power supplies, temperature monitoring and protection functions.
Applications for the new devices include humanoid robotics, drones, industrial motor drives, medical equipment, synchronous rectification and high-density DC-DC converters. EPC said production volumes are currently ramping through its global distribution network.
EPC is also releasing a technical white paper covering the architecture, design considerations and evaluation platforms for the EPC23108/09/10/11 family, with versions available in English and Chinese. The document provides implementation guidance for robotics, drones and high-performance motor-drive systems.
Original – Efficient Power Conversion
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ROHM has developed its 4th Generation 650V IGBTs for automotive auxiliary systems and industrial equipment, combining low conduction losses with high short-circuit tolerance. Target applications include automotive electric compressors and high-voltage heaters, as well as industrial inverters, motors and compressors.
The new automotive-grade devices achieve VCE(sat) of 1.55V and comply with the AEC-Q101 automotive reliability standard. ROHM redesigned the device structure, manufacturing process and edge termination to increase current density while reducing both conduction and switching losses.
The devices provide a short-circuit withstand time of 7µs at a junction temperature of 25°C. This characteristic is designed to provide sufficient time for inverter and heater control circuits to detect overcurrent conditions and interrupt operation while maintaining low-loss performance during normal operation.
ROHM is positioning the 650V devices primarily for lower-power automotive systems where silicon IGBTs continue to be used alongside the increasing adoption of SiC in higher-power EV applications such as traction inverters. The devices also address industrial motor drives, compressors and other inverter-based equipment.
The initial portfolio includes 12 TO-247N packaged products in the RGAxxTS65HR and RGAxxTS65EHR series, along with 10 SG83xxWN bare-wafer products. ROHM is also developing 12 devices in the four-lead TO-247-4L package under the RGAxxTR65HR and RGAxxTR65EHR series.
TO-247N products and selected bare-wafer versions are already available, with a sample price of $8.50 per unit excluding tax. ROHM also provides design models and supporting materials for circuit development.
The company plans to expand the portfolio with additional devices using the existing packages as well as compact surface-mount IGBTs in TO-263L and top-side-cooled packages.
Original – ROHM
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GaN / LATEST NEWS / PRODUCT & TECHNOLOGY / WBGEPC Space Launches Radiation-Hardened GaN Transistors for AI and High-Performance Computing in Space
August 18, 2026
2 Min ReadEPC Space has introduced three radiation-hardened eGaN power transistors targeting the growing power requirements of next-generation space computing platforms, including AI processors, GPUs and high-performance system-on-chip architectures.
The new EPC7050PCSH, EPC7066PCSH and EPC7065PCSH combine high current capability with very low on-resistance in compact plastic PQFN surface-mount packages featuring backside thermal pads. All three devices are rated for 101 A continuous current, while covering voltage classes of 15 V, 25 V and 40 V.
The 15 V EPC7050PCSH provides typical RDS(on) of 0.28 mΩ, while the 25 V EPC7066PCSH offers 0.37 mΩ. The 40 V EPC7065PCSH has typical RDS(on) of 0.5 mΩ. The devices also feature zero reverse-recovery charge, supporting lower switching losses and higher-frequency operation compared with conventional silicon power devices.
Radiation performance is a central feature of the new family. EPC Space specifies total ionizing dose immunity above 1 Mrad, single-event-effect tolerance to LET(Si) of 85 MeV·cm²/mg and neutron tolerance exceeding 4 × 10¹⁵ n/cm². This combination is intended to provide the radiation robustness required for demanding orbital computing and power-conversion systems.
The devices are optimized for synchronous rectification on the secondary side of intermediate bus converters producing 5 V to 12 V outputs. EPC Space highlights their low RDS(on) × QG figure of merit as an enabler for higher switching frequencies, increased conversion efficiency and greater power density.
The transistors also target voltage regulator modules, intermediate voltage regulators and point-of-load buck converters supplying processor core voltages around 0.8 V. EPC Space specifically identifies space computing platforms based on devices such as Versal SoCs and NVIDIA GPUs as potential applications.
Original – EPC Space
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Micro Commercial Components (MCC) has introduced the FR15140-BP, a 1400V, 15A fast recovery rectifier diode targeting high-voltage power conversion systems that require a combination of high blocking voltage, relatively fast recovery and low conduction losses.
The device offers a maximum reverse recovery time of 500 ns, helping reduce reverse-recovery-related switching losses and EMI in higher-frequency power circuits. Its 1400V repetitive peak reverse-voltage rating provides substantial voltage capability for high-voltage converter and inverter designs.
The FR15140-BP features a typical forward voltage of 1.2V at 15A, supporting lower conduction losses during operation. It also provides a non-repetitive peak surge current capability of 200A, improving robustness against transient and inrush-current conditions.
MCC uses a glass-passivated chip junction to support stable electrical characteristics and reliability under demanding operating conditions. Reverse leakage current is specified below 500 µA at 1400V and 125°C, helping limit reverse and standby losses at elevated temperatures.
The diode is supplied in the established TO-220AC through-hole package, providing a familiar mechanical format for high-power designs requiring heatsink integration and effective thermal management.
Original – Micro Commercial Components
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Micro Commercial Components (MCC) has introduced the MCAC028N15Y, a 150V N-channel power MOSFET targeting applications requiring efficient switching, high current capability and effective thermal management in a compact footprint.
The device combines MCC’s Split Gate Trench MOSFET technology with a thermally enhanced PDFN5060 package measuring 5.0 mm × 6.0 mm. It features a maximum RDS(on) of 28 mΩ and supports continuous drain current of up to 40 A, making it suitable for relatively high-current, mid-voltage power conversion designs.
A total gate charge of 18.2 nC complements the device’s low on-resistance, supporting a balance between conduction and switching performance. MCC says the Split Gate Trench architecture is designed to reduce switching losses and improve switching characteristics, particularly relevant in higher-frequency power conversion and motor-control applications.
Thermal performance is another key feature. The MCAC028N15Y offers junction-to-case thermal resistance of 1.24°C/W, enabling heat to be transferred efficiently from the MOSFET during high-power operation. Combined with the compact PDFN5060 package, this supports higher power density where PCB area and cooling capability are constrained.
Target applications include DC-DC converters, BLDC motor drives, industrial automation equipment, battery management systems and portable power stations. The 150 V rating provides the voltage capability required for power architectures operating above the typical 40 V to 100 V MOSFET range while retaining the switching advantages of a silicon trench device.
For the power semiconductor market, the MCAC028N15Y represents MCC’s continued expansion of its discrete MOSFET portfolio into higher-voltage, higher-power-density applications. The combination of 150 V capability, 28 mΩ RDS(on), 18.2 nC gate charge and compact PDFN packaging positions the device primarily around applications where designers need to balance conduction efficiency, switching performance, thermal management and PCB footprint.
Original – Micro Commercial Components
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Micro Commercial Components (MCC) has introduced the SICW30120DG5M-BP, a new 1200V, 30A silicon carbide (SiC) Schottky Barrier Diode designed for high-voltage and high-frequency power conversion systems.
The device combines a 1200V reverse voltage rating with a 30A average forward current capability, targeting applications where higher switching frequencies, efficiency and power density are key design requirements. It is supplied in an industry-standard TO-247AB through-hole package, supporting effective heat dissipation and straightforward heatsink integration.
Based on Merged PiN Schottky (MPS) SiC technology, the SICW30120DG5M-BP offers zero reverse recovery current. Eliminating reverse recovery losses can reduce switching losses and EMI, making the device particularly suitable for high-frequency converter architectures where conventional silicon rectifiers can impose significant recovery-related losses.
The diode has a maximum forward voltage of 1.6V, helping limit conduction losses, while its 180A surge current capability provides additional robustness against inrush currents and transient overload conditions. The MPS architecture combines the switching characteristics of a Schottky diode with enhanced surge-current capability.
The SICW30120DG5M-BP supports a maximum junction temperature of 175°C, allowing operation in thermally demanding power systems and potentially reducing cooling requirements. Its combination of high blocking voltage, zero reverse recovery and high-temperature capability is particularly relevant for next-generation high-power conversion equipment.
Target applications include switched-mode power supplies, power factor correction circuits, EV charging infrastructure, motor drives, renewable energy systems and industrial power conversion equipment.
The introduction expands MCC’s SiC power semiconductor portfolio into higher-voltage and higher-current applications, addressing growing demand for SiC rectifiers as designers move toward faster-switching, more efficient and increasingly power-dense converter architectures.
Original – Micro Commercial Components
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Micro Commercial Components (MCC) has introduced the MURZ3065P-BP and MURZ6065P-BP, a new family of 650V superfast recovery rectifiers targeting high-frequency power conversion applications across industrial, renewable energy and automotive systems.
The new rectifiers combine a 650V reverse voltage rating with average forward current ratings of 30A for the MURZ3065P-BP and 60A for the MURZ6065P-BP. Both devices are housed in rugged TO-247AD packages designed to provide effective thermal dissipation and straightforward heatsink mounting in high-power systems.
A key feature of the series is its fast reverse recovery performance. The devices offer reverse recovery times of 95ns and 105ns, helping reduce switching losses as converter operating frequencies increase. Soft recovery characteristics and low reverse recovery charge also help limit electromagnetic interference and improve switching behavior.
Typical forward voltage is 1.29V and 1.28V, respectively, helping reduce conduction losses and improve overall conversion efficiency. The devices also feature near-zero temperature coefficient characteristics, supporting stable forward-voltage and switching behavior across a broad operating temperature range and simplifying thermal management.
For applications exposed to transient overloads, the rectifiers provide surge current capability of up to 220A and 400A, depending on the device. MCC also uses planar-structure die technology to support device reliability and manufacturing consistency.
The combination of high current capability, fast and soft recovery, low forward voltage and robust thermal characteristics makes the MURZ Series suitable for power factor correction circuits, uninterruptible power supplies, industrial power supplies, EV charging equipment, welding systems and inverter applications.
The launch expands MCC’s high-voltage rectifier portfolio as power electronics designers seek lower switching and conduction losses in increasingly high-frequency and power-dense converter architectures.
Original – Micro Commercial Components
