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STMicroelectronics has expanded its STPOWER portfolio with a new family of 700 V gallium nitride (GaN) power transistors designed to improve efficiency and increase power density in medium- and high-power applications.
The new enhancement-mode PowerGaN HEMTs target rapidly growing markets including AI servers, robotics, industrial power supplies, smart-grid infrastructure, and advanced electrification systems. By extending GaN technology into higher power levels, ST aims to address increasing performance demands that are challenging the limits of conventional silicon-based power solutions.
The new portfolio consists of seven devices with current ratings ranging from 6 A to 29 A and typical RDS(on) values between 53 mΩ and 270 mΩ. The devices leverage the inherent advantages of GaN technology, including low conduction losses, extremely low switching losses at high frequencies, low gate charge, and zero reverse recovery characteristics.
These features enable operation at significantly higher switching frequencies, allowing reductions in the size of magnetic components and passive elements while increasing overall power density and lowering system operating temperatures.
From a packaging standpoint, the devices are available in DPAK, TO-LL, and PowerFLAT surface-mount packages. TO-LL and PowerFLAT versions include Kelvin source connections that improve noise immunity, enhance gate-driver performance, and support cleaner switching behavior.
Original – STMicroelectronics
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LATEST NEWS / PRODUCT & TECHNOLOGY / SiC / TOP STORIES / WBGWolfspeed Launches New 3.3 kV SiC Power Module Families for AI Infrastructure and Grid Modernization
May 21, 2026
2 Min ReadWolfspeed has introduced two new 3.3 kV silicon carbide power module families aimed at addressing rising power conversion demands driven by AI data centers, renewable energy systems, and broader electrification trends.
The launch includes a high-power half-bridge baseplate module for applications exceeding 800 A, as well as a scalable full-bridge baseplate-less module under the WolfPACK® platform. Both are designed around industry-standard footprints and target next-generation medium-voltage power architectures.
The baseplate module is optimized for high-power applications such as solar inverters, wind energy systems, and grid-scale storage, while the WolfPACK® family is focused on modular solid-state transformer (SST) architectures and renewable energy infrastructure. The flexibility of the baseplate-less approach enables series-stacked and multi-level converter configurations, supporting scalable high-voltage systems.
Technically, both module families are designed for continuous 24/7 operation in 2 kV+ DC-link environments. They incorporate advanced packaging technologies such as sintered die attach, improved encapsulation materials, and enhanced cosmic ray robustness to improve reliability and power cycling performance.
From a performance perspective, the new baseplate module reportedly delivers up to 42% lower switching losses compared to competing SiC solutions and more than 90% lower losses compared to traditional IGBT systems under comparable operating conditions. The WolfPACK® architecture also enables significant reductions in system footprint, supporting more compact solid-state transformer designs.
Original – Wolfspeed
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Toshiba Electronics Europe GmbH has begun test-sample shipments of its new TW007D120E, a 1200 V trench-gate silicon carbide MOSFET targeting high-efficiency power systems for AI data centers and other high-power infrastructure applications.
The device is packaged in a top-side cooled QDPAK format, enabling improved thermal dissipation and higher power density—critical requirements for next-generation AI server power supplies and emerging 800 V HVDC data center architectures. In addition to AI infrastructure, the MOSFET is also positioned for renewable energy systems, UPS equipment, EV charging stations, and energy storage applications.
Technically, the TW007D120E utilizes Toshiba’s proprietary trench-gate SiC structure to significantly improve on-resistance per unit area. The device achieves a typical RDS(on) of 7.0 mΩ with 172 A drain current capability and 33 nC gate-drain charge. Compared with Toshiba’s previous-generation 1200 V SiC MOSFET, the new product reduces specific on-resistance by approximately 58% and improves the key switching/conduction loss figure-of-merit by around 52%.
The device also supports lower gate drive voltages between 15 V and 18 V, helping reduce system complexity and power losses while improving overall efficiency.
Original – Toshiba
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Infineon Technologies AG has expanded its CoolGaN™ BDS 40 V G3 family with two new bidirectional switch devices, the IGK048B041S and IGK120B041S, targeting compact consumer electronics such as smartphones, notebooks, and wearables.
The new GaN-based devices integrate the functionality of two back-to-back silicon MOSFETs into a single component, enabling up to 82% PCB footprint reduction while cutting component count in half. This directly addresses increasing pressure on designers to maximize power efficiency within highly space-constrained mobile devices.
Available in ultra-compact wafer-level chip-scale packages, the devices deliver low on-resistance values of 4.2 mΩ and 9 mΩ while maintaining compatibility with standard 5 V gate drivers. Infineon emphasized that the architecture enables designers to reuse existing driver layouts, simplifying adoption and accelerating product development.
From a performance standpoint, the CoolGaN bidirectional switches offer significantly lower gate charge and substantially reduced leakage current compared to competing solutions. Lower gate charge improves switching speed and reduces switching losses, supporting more efficient fast-charging systems and better thermal management.
Unlike traditional silicon MOSFETs that rely on body diodes, the new devices provide true bidirectional voltage and current blocking. This capability is particularly important in USB overvoltage protection, load switching, and power multiplexing applications where reverse current prevention is critical for protecting sensitive electronics.
Original – Infineon Technologies
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Cyient Semiconductors has announced the launch of its first gallium nitride (GaN) power device family for the Indian market, developed using technology licensed from Navitas Semiconductor.
The launch marks a significant milestone for India’s domestic power semiconductor ecosystem, positioning Cyient Semiconductors as a new entrant in the high-performance GaN market. The initial portfolio includes seven integrated 700 V GaN power devices designed for applications such as AI data centers, telecom infrastructure, consumer fast chargers, industrial power systems, and e-mobility platforms.
The devices integrate driver, control, protection, EMI management, and current sensing functions within compact DPAK packages, simplifying system design and accelerating product development. The portfolio spans multiple resistance levels from 120 mΩ to 330 mΩ, supporting both QR and PFC/high-side topologies.
Strategically, the collaboration builds on an agreement announced in late 2025 under which Cyient licenses Navitas’ GaN technology for deployment in India. In addition to local commercialization, Cyient will act as a second-source supplier for selected Navitas products already in production, strengthening supply chain resilience and supporting domestic sourcing initiatives aligned with India’s “Make in India” strategy.
From a technology perspective, GaN devices offer substantial advantages over traditional silicon, including higher switching speeds, lower losses, and improved thermal efficiency. These benefits are increasingly critical in AI infrastructure and compact high-power systems where efficiency and power density directly impact operating costs and scalability.
Looking ahead, Cyient plans to expand the portfolio through partnerships with local OSAT providers, with a long-term goal of enabling domestic manufacturing of GaN power devices in India. This phased approach reflects a broader industry trend toward regional semiconductor ecosystems and localized supply chains.
From a market standpoint, the announcement highlights India’s growing ambition to participate more actively in advanced power semiconductor technologies, particularly in strategically important segments such as AI infrastructure, telecom power, and electrification.
Original – Cyient Semiconductors
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Infineon Technologies AG has expanded its XHP™ 2 power module portfolio with new 2300 V CoolSiC™ MOSFET variants, targeting next-generation high-voltage renewable energy and energy storage systems.
The new silicon carbide modules are designed to support DC-link voltages up to 1500 V, aligning with the industry shift toward higher-voltage architectures aimed at improving efficiency and reducing system complexity. The modules are offered with RDS(on) values ranging from 1 mΩ to 2 mΩ and isolation voltages of either 4 kV or 6 kV, enabling flexibility across various high-power applications.
By leveraging SiC technology, the modules significantly reduce switching and conduction losses compared to conventional silicon solutions. This enables higher inverter efficiency, increased power density, and operation at higher switching frequencies, which can reduce harmonic distortion and shrink overall system size.
The devices are packaged in Infineon’s XHP 2 platform, featuring symmetrical switching characteristics that simplify paralleling in large power converters. The modules also integrate Infineon’s .XT interconnection technology to improve reliability and extend operational lifetime. Optional pre-applied thermal interface material further simplifies assembly and enhances thermal consistency.
Infineon highlighted measurable system-level performance improvements, including power densities reaching 300 kW/L in wind power demonstrations and semiconductor losses below 0.7% of output power in battery storage applications.
From a market perspective, the launch reflects accelerating demand for higher-voltage, high-efficiency power conversion in renewable energy infrastructure, utility-scale battery storage, and grid modernization projects. As system voltages continue rising to improve energy transmission efficiency, 2300 V SiC devices are emerging as a key enabling technology.
Strategically, Infineon is strengthening its position in the rapidly growing high-voltage SiC market, where scalability, efficiency, and reliability are becoming critical differentiators for renewable energy and industrial power systems.
Original – Infineon Technologies
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STMicroelectronics has introduced two new 100 W VIPerGaN high-voltage converters, expanding the use of GaN-based power conversion across consumer electronics, smart home systems, appliances, and building automation applications.
The new VIPerGaN100W and VIPerGaN100WB integrate a 700 V GaN transistor, gate driver, and flyback controller into compact 5 mm × 6 mm QFN packages. The VIPerGaN100WB supports higher peak current capability, allowing short-term output power up to 125 W for applications with inductive loads such as motors and solenoid valves.
The integrated GaN power stage features ultra-low RDS(on), enabling improved thermal performance and higher efficiency. By leveraging the high switching frequencies enabled by GaN technology, the converters reduce passive component size and improve overall power density.
ST also demonstrated the technology through its EVLVIPGAN100WP 100 W USB Type-C Power Delivery 3.0 reference design, which achieves over 92% peak efficiency and a power density of 24 W/in³. The design supports multiple USB-PD output profiles from 5 V to 20 V.
Technically, the converters operate in quasi-resonant flyback mode with zero-voltage switching, incorporating advanced power management features such as valley skipping, frequency foldback, and burst-mode operation to optimize efficiency across varying load conditions. Standby power consumption is reduced below 30 mW.
The devices also integrate extensive protection functions, including overvoltage, overtemperature, and brown-in/brown-out protection, simplifying system-level design and improving reliability.
From a market perspective, this launch reflects the ongoing expansion of GaN beyond premium fast chargers into broader consumer and industrial power applications. By integrating GaN power devices and control circuitry into highly compact solutions, ST is lowering the barrier to adoption for mainstream OEMs seeking higher efficiency, reduced size, and lower standby power consumption.
The move also strengthens ST’s competitive position in the growing integrated GaN power IC market, where ease of design integration and cost-effective scalability are becoming increasingly important differentiators.
Original – STMicroelectronics
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Micro Commercial Components has launched the MCACD8D5N06YL, a dual N-channel MOSFET array designed to improve efficiency and integration in space-constrained power systems.
The device integrates two matched 60 V MOSFETs within a single compact PDFN5060-8D package, reducing component count and simplifying gate drive design. This integration enables more compact power stage layouts while maintaining strong electrical and thermal performance.
Featuring a low maximum RDS(on) of 8.5 mΩ and built on split-gate trench MOSFET technology, the device minimizes both conduction and switching losses. The matched characteristics of the dual MOSFET configuration ensure balanced current sharing and predictable switching behavior—key advantages for synchronous rectification and parallel power stage designs.
With support for up to 50 A continuous drain current and a thermally efficient package design, the MCACD8D5N06YL is well suited for high-current applications such as DC-DC converters, load switches, and motor control systems across consumer and industrial markets.
From a market perspective, this product reflects the growing demand for higher integration in low-voltage power stages, particularly in AI servers, telecom systems, and compact industrial electronics. While wide-bandgap devices continue to dominate high-voltage segments, advanced silicon MOSFET integration—such as dual or multi-die configurations—remains critical for improving power density, reducing PCB footprint, and optimizing system cost in high-current, low-voltage applications.
Original – Micro Commercial Components
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Vishay Intertechnology has launched a new family of 16 FRED Pt ultrafast rectifiers in the DFN6546A package, targeting space-constrained, high-efficiency applications across automotive, industrial, and consumer markets.
The new 200 V devices offer current ratings from 6 A to 15 A and are available in both commercial and AEC-Q101 qualified automotive-grade versions. The DFN6546A package features a compact 6.5 mm × 4.6 mm footprint with an ultra-low height of 0.88 mm, enabling improved PCB space utilization and supporting increasingly dense power designs.
From a performance standpoint, the rectifiers deliver low forward voltage (approximately 0.75 V), fast reverse recovery, and low reverse recovery charge, reducing switching losses and improving overall system efficiency. Enhanced thermal performance is achieved through optimized copper mass and die placement, allowing higher current capability compared to similarly sized packages.
The devices are designed for a wide range of applications, including DC/DC converters, high-frequency inverters, freewheeling diodes, and protection circuits. In automotive systems, they target use cases such as ECUs, ADAS, lighting, and 48 V power architectures in EVs and HEVs. They also support industrial automation, telecom, and consumer electronics applications.
A key packaging advantage is the inclusion of wettable flanks, enabling automated optical inspection (AOI) and eliminating the need for X-ray inspection—an important factor for high-volume manufacturing efficiency.
From a market perspective, this release highlights the continued evolution of silicon-based rectifiers through packaging and thermal innovation. While wide-bandgap devices are gaining share in high-voltage segments, optimized silicon rectifiers remain highly relevant in cost-sensitive, high-volume applications where efficiency, reliability, and compact form factors are critical.
Vishay’s latest offering reinforces its position in discrete power components by addressing the growing demand for miniaturization and improved thermal performance in modern power electronics systems.
Original – Vishay Intertechnology
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ROHM Co., Ltd. has developed its 5th-generation EcoSiC™ MOSFETs, targeting improved efficiency and performance in high-power applications such as electric vehicles, AI data centers, and industrial power systems.
The new generation delivers a significant performance improvement over previous devices, with approximately 30% lower ON-resistance at high temperatures (175°C) compared to 4th-generation SiC MOSFETs under similar conditions. This reduction directly translates into lower conduction losses, enabling higher efficiency, increased power density, and more compact system designs—particularly critical for traction inverters and high-performance power supplies.
The technology is positioned to address two major market drivers. In automotive, it supports longer EV driving range and faster charging through more efficient inverters and onboard chargers. In parallel, the rapid expansion of AI infrastructure and data centers is increasing power density requirements, making efficient power conversion a key bottleneck for system scalability.
ROHM has a long-standing position in SiC, having started mass production as early as 2010. Its 4th-generation devices have already seen broad adoption across automotive and industrial markets. The 5th-generation platform builds on this foundation with structural and process optimizations that enhance high-temperature performance—an increasingly important factor as power systems operate under more demanding conditions.
Commercially, ROHM began offering bare die versions in 2025 and completed development in March 2026. Sampling of discrete devices and modules based on the new generation is scheduled to begin in July 2026, with further expansion planned across voltage classes and packaging options.
From a market perspective, this launch reinforces the transition of silicon carbide into a mainstream power semiconductor technology. As electrification and AI-driven power demand accelerate, improvements in efficiency and thermal performance at the device level are becoming critical enablers for next-generation systems. ROHM’s latest generation strengthens its competitive positioning in the increasingly crowded SiC landscape, where performance gains at high temperature and high power are key differentiators.
Original – ROHM
