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Coherent Corp. has announced a significant advancement in its next-generation 300mm silicon carbide (SiC) platform, addressing the growing need for enhanced thermal efficiency in AI datacenter infrastructure.
Building on its established expertise in 200mm SiC technology, Coherent has developed a 300mm solution designed to support the increasing power density and heat dissipation requirements of next-generation datacenters. This development marks a key milestone in the industry’s shift toward larger-diameter SiC substrates, offering improved scalability, faster switching performance, and superior thermal management for high-performance computing environments.
The new platform delivers conductive SiC substrates characterized by low resistivity, low defect density, and high material homogeneity—features that are critical for achieving high-frequency operation, low energy dissipation, and thermal stability in demanding AI and data infrastructure applications.
“AI is transforming the thermal-management landscape in datacenters, and silicon carbide is emerging as one of the foundational materials enabling this scalability,” said Gary Ruland, Senior Vice President and General Manager at Coherent. “Our 300mm platform, which we plan to ramp in high volumes, delivers new levels of thermal efficiency that translate directly into faster, more power-efficient AI datacenters.”
In addition to datacenter applications, Coherent is expanding the use of its SiC technology in augmented and virtual reality (AR/VR) devices and power electronics. For AR smart glasses and VR headsets, the 300mm SiC substrates support thinner, more efficient waveguides, enhancing performance and reliability in compact optical modules. In power electronics, the larger wafer size enables higher device yields and lower cost per chip, supporting a range of applications including electric vehicles, renewable energy systems, and industrial automation.
The introduction of the 300mm SiC platform solidifies Coherent’s leadership in wide-bandgap semiconductor materials and underscores its commitment to enabling innovation across datacenter infrastructure, optics, and power electronics.
Original – Coherent
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Vishay Intertechnology, Inc. has announced the release of two new 1200 V silicon carbide (SiC) MOSFET power modules designed to enhance efficiency and system reliability in automotive, industrial, energy, and telecommunications applications. The new modules, designated VS-MPY038P120 and VS-MPX075P120, integrate advanced SiC technology in a low-profile MAACPAK PressFit package and are aimed at supporting medium to high frequency operations.
Each module combines Vishay’s latest generation of SiC MOSFETs with an NTC thermistor for integrated temperature sensing and fast intrinsic SiC diodes for minimized reverse recovery. These features result in reduced switching losses and higher efficiency in a range of demanding applications, including electric and hybrid vehicle chargers, solar inverters, motor drives, UPS systems, HVAC systems, large-scale energy storage, and telecom power supplies.
The rugged transfer mold construction of the new modules contributes to longer operational lifespans compared to traditional designs, while offering improved thermal resistance. Their compact, low-profile package design minimizes parasitic inductance and electromagnetic interference (EMI), and helps conserve board space. In addition, the PressFit pin layout follows established industry standards, facilitating drop-in replacement for existing solutions with enhanced electrical performance.
The VS-MPY038P120 features a full-bridge inverter topology, an on-resistance of 38 mΩ, and a continuous drain current of 35 A at 80 °C. The VS-MPX075P120 adopts a three-phase inverter topology, with an on-resistance of 75 mΩ and a continuous drain current of 18 A. Both modules support high-speed switching, offer low capacitance, and operate at junction temperatures up to 175 °C. They are RoHS-compliant and halogen-free.
Samples and production volumes for the VS-MPX075P120 and VS-MPY038P120 are currently available, with standard lead times of 13 weeks.
Original – Vishay Intertechnology
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Mitsubishi Electric Corporation has announced the launch of new standard-isolation (6.0 kVrms) and high-isolation (10.2 kVrms) modules in its 4.5 kV / 1,200 A XB Series of high-voltage insulated-gate bipolar transistors (HVIGBTs), scheduled for market release on December 9, 2025.
These newly developed high-capacity power semiconductor modules are designed to deliver improved moisture resistance and operational reliability, supporting efficient inverter performance in large-scale industrial equipment such as railcars, even under challenging environmental conditions including outdoor use.
The advanced HVIGBT modules are equipped with IGBT elements featuring Mitsubishi Electric’s proprietary relaxed field of cathode (RFC) diode and carrier-stored trench-gate bipolar transistor (CSTBT) structure. Through the integration of new electric field relaxation and surface charge control mechanisms, the modules achieve a reduction of approximately 30% in chip termination region size. Moreover, the new devices deliver around 20 times greater moisture resistance compared to existing products, making them well-suited for high-humidity environments.
In terms of performance improvements, the modules offer approximately 5% lower total switching loss relative to earlier models and demonstrate about 2.5 times higher reverse-recovery safe-operating area (RRSOA) tolerance. These enhancements collectively contribute to increased efficiency, greater reliability, and extended inverter life cycles in demanding industrial applications.
Mitsubishi Electric plans to showcase the new HVIGBT modules at the 40th Nepcon Japan R&D and Manufacturing show in Tokyo from January 21 to 23, 2026, with additional exhibitions planned across North America, Europe, China, India, and other global regions.
With these technological advancements, the company aims to support the broader adoption of environmentally responsible power solutions and contribute to global carbon neutrality goals.
Original – Mitsubishi Electric
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Micro Commercial Components (MCC) has announced the release of the MCP012N20YH, a 200V N-Channel power MOSFET developed to address thermal and efficiency challenges in high-voltage power stage applications. Built on MCC’s Split Gate Trench (SGT) technology and housed in a thermally enhanced TO220AB(B) package, the device delivers low conduction losses, fast switching, and robust thermal performance for a wide range of industrial and communications systems.
The MCP012N20YH features a low typical RDS(on) of 12 milliohms and supports high junction temperatures up to 175°C, enabling compact, high-density power system designs. The optimized TO220AB(B) package offers an improved thermal path that allows for higher current handling and lower temperature rise, reducing the need for oversized heatsinks and simplifying thermal management.
Ideal for motor drives, DC-DC converters, base station power amplifiers, and industrial power stages, the MCP012N20YH supports improved efficiency, greater reliability, and easier integration with its industry-standard footprint.
Key Features and Benefits:
- 200V N-Channel MOSFET with Split Gate Trench (SGT) technology
- Low RDS(on): 12 mΩ (typical) for reduced conduction losses
- Fast switching speeds improve overall system performance
- High junction temperature capability (≤175°C) enhances thermal reliability
- Strong avalanche performance and robust safe operating area (SOA)
- Thermally optimized TO220AB(B) package with standard footprint for simplified design-in and improved heat dissipation
The MCP012N20YH offers a cost-effective, high-efficiency solution for designers seeking to improve power density and reliability in demanding high-voltage applications.
Original – Micro Commercial Components
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Navitas Semiconductor has announced the sample availability of its new 3300V and 2300V ultra-high voltage (UHV) SiC products. Offered in power module, discrete, and known good die (KGD) formats, these devices set a new standard in performance and reliability for high-power applications including solid-state transformers, grid infrastructure, renewable energy, and AI data centers.
The new UHV devices are built on Navitas’ fourth-generation GeneSiC™ platform, featuring a proprietary Trench-Assisted Planar (TAP) MOSFET architecture. This design incorporates a multi-step electric field management profile that reduces voltage stress and enhances blocking performance compared to traditional planar and trench SiC MOSFETs. The TAP structure also improves avalanche robustness and long-term reliability, supported by optimal source contact engineering for better cell-pitch density and current spreading. These innovations lead to superior switching characteristics and lower on-resistance at high operating temperatures.
The new devices are available in the advanced SiCPAK™ G+ power module format, in both half-bridge and full-bridge configurations. These modules incorporate epoxy-resin potting technology that provides over 60% improvement in power cycling lifetime and more than 10x improvement in thermal shock reliability compared to conventional silicone-gel-based modules. Key features include:
- AlN DBC substrates for enhanced heat dissipation
- High-current press-fit pins with double the current-carrying capacity
- Discrete packages available in TO-247 and TO-263-7 formats
Navitas has introduced AEC-Plus, an industry-first reliability benchmark that goes beyond AEC-Q101 and JEDEC standards. This qualification covers a wide range of rigorous test protocols, including:
- Dynamic reverse bias (DRB) and dynamic gate switching (DGS) testing
- Over 3x extended high-temperature and high-voltage testing (HTRB, HTGB)
- HV-THB for modules and HV-H3TRB for discretes and KGD
- Extended power and temperature cycling
The 3300V and 2300V devices are also offered as known good die (KGD), enabling system designers to build custom high-performance modules. Navitas applies stringent production screening, including singulated die testing at room and elevated temperatures, and six-side optical inspection to ensure the highest levels of quality, reliability, and yield.
“Navitas’ new 3300V and 2300V SiC product portfolio allows our customers to push the boundaries of efficiency and reliability in solid-state transformers for AI data centers, as well as utility-scale battery energy storage and renewable energy to define a new standard for such mission-critical system applications,” said Paul Wheeler, Vice President and General Manager of the SiC Business Unit.
Wheeler added, “This line of reliable, high-performance ultra-high voltage power semiconductors is expected to be a significant step in our roadmap to 10 kV SiC solutions. By combining our proprietary Trench-Assisted Planar SiC MOSFET technology with innovative power packages, we are able to extend reliability qualification and support more stringent production screening, to deliver industry-leading performance and robustness.”
The new SiC portfolio underscores Navitas’ strategic commitment to advancing ultra-high voltage power electronics for critical energy infrastructure and high-density computing environments.
Original – Navitas Semiconductor
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Alpha and Omega Semiconductor Limited has introduced the AOLV66935—a 100V High Safe Operating Area (SOA) MOSFET in a compact LFPAK 8×8 package. Engineered to meet the increasing power and reliability demands of 48V hot swap applications in AI servers, the device delivers low conduction losses, robust thermal performance, and space-saving benefits for advanced system architectures.
The AOLV66935 is built on AOS’ proprietary 100V AlphaSGT™ MOSFET platform, which merges low on-resistance trench technology with enhanced SOA capability. The device has been rigorously tested and characterized at both 25°C and elevated operating conditions up to 125°C, ensuring stable and reliable performance in thermally demanding environments typical of AI servers.
Designed for high-current switching, the LFPAK 8×8 package features gull-wing leads and advanced clip technology, achieving a 60% smaller footprint compared to the TO-263 (D2PAK) while maintaining high current handling. The package’s low thermal resistance and compatibility with automated optical inspection (AOI) processes make it well-suited for space-constrained, high-reliability server applications.
Key performance metrics include a low RDS(on) of 1.86 milliohms (max) at Vgs = 10V, which minimizes conduction losses and reduces the number of devices needed in parallel—enabling more compact designs without compromising efficiency or thermal integrity.
“To be able to perform the 48V hot swap in AI servers requires a MOSFET that excels in high current capability while providing exceptional high SOA robustness and reliability,” said Peter H. Wilson, Senior Director of the MOSFET Product Line at Alpha and Omega Semiconductor. “AOS designed the AOLV66935 High SOA MOSFET packaged in our advanced LFPAK 8×8 specifically to meet these demands. Plus, its exceptional low on-resistance significantly decreases conduction losses so fewer devices in parallel are required, allowing designers to meet space limitations.”
Manufactured in IATF 16949-certified facilities, the AOLV66935 is optimized to support the next generation of AI infrastructure requiring high-efficiency power switching and thermal durability under harsh operating conditions.
Original – Alpha and Omega Semiconductor
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Fagor Electrónica, in collaboration with MONDRAGON Ventures, has announced an investment in Semi Zabala, a company specializing in the development of Gallium Nitride (GaN) HEMT transistors. The move reflects an ongoing focus on innovation and strategic diversification in the semiconductor sector.
This investment aligns with efforts to enhance access to next-generation GaN-based power technologies and supports the expansion of semiconductor capabilities in sectors such as aerospace and industrial power electronics.
Semi Zabala, currently progressing with its “Beyond The Power” industrial initiative, recently inaugurated a facility in Zubieta dedicated to the manufacturing and testing of power semiconductors. The new site is positioned to contribute to the regional semiconductor value chain and further establish Euskadi as a center for microelectronics development.
The collaboration reinforces regional industry cooperation and supports the advancement of wide-bandgap semiconductor technologies in emerging and high-performance applications.
Original – Fagor Electrónica
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Toshiba Electronic Devices & Storage Corporation has released the TK057V60Z1, a 600V N-channel silicon power MOSFET built using the DTMOSVI super junction process. The device is intended for use in power supply applications including data center servers, industrial switched-mode power supplies, and photovoltaic power conditioners.
The TK057V60Z1 features a typical drain-source on-resistance (RDS(on)) of 0.047Ω, the lowest among Toshiba’s 600V MOSFETs in the DFN8×8 surface-mount package. Compared to the previous TK31V60X model, it offers approximately 40% lower RDS(on) and a 32% reduction in gate-drain charge (Qgd), contributing to lower conduction and switching losses while maintaining similar total gate charge (Qg).
The compact DFN8×8 package supports higher power density designs. Toshiba provides SPICE models (G0 and G2) for circuit simulation, as well as an online simulator to assist in power circuit development.
The new MOSFET is part of Toshiba’s ongoing DTMOSVI series expansion aimed at improving efficiency in industrial power systems.
Original – Toshiba
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Infineon Technologies AG has expanded its cooperation with Anker to develop a high-speed, compact charger capable of delivering up to 160 watts of power. The project resulted in the release of a charger that combines compact design with high power density, incorporating Infineon’s digital controller and gallium nitride (GaN) technology.
The charger utilizes Infineon’s XDP™ XDPS2221E hybrid-flyback digital controller and CoolGaN™ transistors to support high-frequency, high-efficiency power conversion. Key design features include the integration of power factor correction (PFC) and hybrid-flyback stages to optimize performance and reduce component size. The charger provides up to 140 watts from individual USB-C ports, with dynamic allocation of 160 watts across multiple devices.
Infineon’s system-level approach includes the use of integrated GaN driver-transistor combinations and dual-transistor packages, allowing for improved thermal performance and reduced board space. The overall design minimizes peripheral components and supports cost-effective system layouts.
The collaboration is supported by an innovation center in Shenzhen, established by both companies to focus on efficient power solutions and fast-charging system development.
The new charger will be featured during CES 2026 in Las Vegas.
Original – Infineon Technologies
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ROHM has introduced the RS7P200BM, a 100V N-channel power MOSFET in a compact DFN5060-8S (5.0mm × 6.0mm) package. Designed for hot-swap applications and battery protection in 48V systems, the device is suitable for AI server power circuits and industrial equipment requiring efficient power management.
Key Specifications:
- Drain-Source Voltage (VDS): 100 V
- On-Resistance (RDS(on)): 4.0 mΩ (VGS = 10 V, ID = 50 A, Ta = 25°C)
- Safe Operating Area (SOA):
- 7.5 A @ 10 ms pulse width (VDS = 48 V)
- 25 A @ 1 ms pulse width (VDS = 48 V)
- Package: DFN5060-8S (5.0mm × 6.0mm)
The RS7P200BM is engineered to handle inrush currents and transient overload conditions in 48V hot-swap environments. Its wide SOA and low RDS(on) provide thermal and electrical efficiency for compact, high-density server designs.
Applications:
- 48V hot-swap circuits in AI servers and data centers
- Battery-powered industrial systems such as AGVs and forklifts
- UPS and backup power systems
- Robotics, fan motors, and power tools in 48V industrial domains
This release supports the industry’s trend toward 48V systems, aiming to improve power density, energy efficiency, and thermal performance in power electronics.
Original – ROHM
