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Navitas Semiconductor will present its latest GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power technologies at APEC 2026, booth #2027, in San Antonio, Texas, from March 22–26.
The company will highlight solutions targeting AI data centers, performance computing, grid and energy infrastructure, and industrial electrification.
Navitas will unveil a 10 kW ‘GaN-powered’ 800 V–to–50 V DC-DC platform, designed for next-generation AI data centers.
Key features include:
- Advanced 650 V and 100 V GaNFast FETs
- Three-level half-bridge architecture with synchronous rectification
- 98.5% peak efficiency
- 2.1 kW/in³ power density
- Support for both 800 V and ±400 VDC AI data center architectures
In addition, Navitas will showcase:
- A 12 kW AI data center power supply using IntelliWeave™ digital control
- An 8.5 kW OCP power supply
- A 4.5 kW CRPS power supply
For next-generation solid-state transformer (SST) applications, Navitas will present its SiCPAK™ power module portfolio, designed for high-efficiency (>98%) conversion from medium-voltage grids (13.8 kVAC to 34.5 kVAC) to 800 VDC or 1500 VDC.
The lineup includes:
- 3300 V ultra-high-voltage (UHV) SiC modules
- 2300 V UHV SiC modules
- 1200 V high-voltage solutions
A new gate driver evaluation board for dynamic characterization of UHV SiCPAK™ modules will also be demonstrated.
Navitas will debut ultra-compact:
- 240 W and 300 W GaN-based power solutions for AI-enabled high-performance computing
- 400 W to 1 kW GaN motor control systems for industrial applications
These designs emphasize superior efficiency, compact size, and high power density enabled by the latest GaNFast IC technology.
Navitas executives and engineers will participate in multiple technical sessions:
- March 24 | 8:55–9:20 AM CT | IS01.2
Maximizing MVHV SiC Performance and Reliability
Presenter: Sumit Jadav - March 25 | 11:05–11:30 AM CT | IS07.6
High-Power GaN ICs in 800V AI DC-DC Brick Solutions
Presenter: Llew Vaughan-Edmunds, VP & GM, GaN Business Unit - March 26 | 11:35–11:50 AM CT | IS27.4
Single-stage Power Converter Enabled by GaN Bidirectional Switches
Presenter: Llew Vaughan-Edmunds
With innovations spanning GaN and ultra-high-voltage SiC, Navitas continues to target high-power markets where efficiency, density, and reliability are critical—particularly as AI infrastructure and electrification accelerate globally.
Original – Navitas Semiconductor
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Infineon Technologies AG has expanded its CoolGaN™ portfolio with the new CoolGaN Drive HB 600 V G5 product family. The four new devices – IGI60L1111B1M, IGI60L1414B1M, IGI60L2727B1M and IGI60L5050B1M – integrate two 600 V GaN switches in a half-bridge configuration along with high- and low-side gate drivers and a bootstrap diode in a single package.
By combining key power stage functions into one thermally optimized solution, the new family reduces external component count, simplifies PCB layout challenges typically associated with fast-switching GaN devices and helps shorten development cycles. Infineon said the integrated approach allows designers to realize GaN’s core advantages, including higher switching frequencies, lower switching and conduction losses and greater power density.
Johannes Schoiswohl, Head of the GaN Business Line at Infineon, said the new solutions combine high-speed GaN performance with enhanced integration and robustness, helping designers shrink systems and improve efficiency in compact power electronics.
The CoolGaN Drive HB 600 V G5 devices target low-power motor drives and switched-mode power supplies. The integrated half-bridge architecture enables smaller magnetics and passive components, improved efficiency across operating conditions and enhanced dynamic performance in space-constrained designs.
The devices are engineered for high-speed precision, offering a 98 ns propagation delay with minimal mismatch to support efficient high-frequency operation and predictable timing. For simplified integration, the products feature PWM inputs compatible with standard logic levels and operate from a single 12 V gate driver supply. Fast under-voltage lockout (UVLO) recovery supports reliable start-up and transient performance.
For thermal optimization, the devices are housed in a 6 mm × 8 mm TFLGA-27 package with exposed pads, enabling efficient heat spreading and supporting heatsink-less designs in many applications.
Infineon said the new CoolGaN Drive HB 600 V G5 family strengthens its position in the GaN market by combining proven CoolGaN device technology with system-level integration and deep power conversion expertise, enabling customers to more easily adopt and scale high-efficiency GaN-based designs across industrial and consumer platforms.
Original – Infineon Technologies
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Efficient Power Conversion (EPC) will present its latest Generation 7 (Gen 7) GaN technology and integrated GaN ICs at the Applied Power Electronics Conference (APEC) 2026. At booth #1935, EPC will demonstrate production-ready power architectures targeting AI infrastructure and next-generation robotic systems, alongside a series of live technical presentations led by its engineering team.
EPC said the rapid expansion of AI computing is reshaping power delivery architectures, introducing 800 V distribution and megawatt-class racks that require higher efficiency, density and reliability throughout the power conversion chain. At the same time, humanoid robotics demand compact, lightweight and highly efficient electronics embedded directly within joints and actuators. The company will show how GaN technology enables point-of-load conversion in data centers and compact motor drives in robotics.
EPC will showcase multiple development platforms already deployed in customer programs across robotics, drones and high-performance computing. These include:
- EPC9176 and EPC91104 motor drive boards
- EPC9186 multi-device inverter
- Humanoid joint platforms EPC91118 and EPC91120
- DC-DC conversion solutions including EPC91200, EPC9196 and EPC9193 series
The company emphasized that while reference designs support development, its focus remains on scalable, production-ready devices built on the Gen 7 platform.
CEO Alex Lidow said the new Generation 7 transistors outperform MOSFETs across the 40 V to 15 V range and that EPC’s latest GaN ICs enable more compact, higher-performance motor drives for humanoid robots and drones.
At APEC 2026, EPC will host live booth presentations and technical sessions covering system architectures, reliability methodologies and application implementations. Highlights include:
- Tuesday, March 24 (10:30–11:10 am):
Alex Lidow – GaN Beats MOSFETs at All Voltages
Shengke Zhang – Leveraging Test-to-Fail Methodology to Ensure Reliable Field Operation of GaN Devices - Tuesday, March 24 (2:30–3:10 pm):
Marco Palma – GaN Inverters Reference Designs for Humanoid Robot Motor Joints
Michael de Rooij – 800 V to 12 V AI Servers Using Low-Voltage GaN in an ISOP Converter
Additional conference presentations will address topics including end-to-end GaN system design, reliability assessment under dynamic switching conditions, integrated magnetics for server power supplies, robotic micro-modules and mission-profile-driven reliability for AI data centers.
EPC representatives, including CEO Dr. Alex Lidow, will be available at booth #1935 to discuss GaN solutions for AI infrastructure, robotics and high-density power systems.
Original – Efficient Power Conversion
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ROHM Co., Ltd. has announced plans to integrate its proprietary GaN power device development and manufacturing technologies with process technology from TSMC, establishing an end-to-end GaN production system within the ROHM Group.
Under a newly signed license agreement, TSMC’s GaN process technology will be transferred to ROHM’s Hamamatsu facility, enabling the company to strengthen its supply capabilities in response to rapidly growing demand for GaN in applications such as AI servers and electric vehicles (EVs).
Gallium nitride (GaN) power devices offer superior high-voltage and high-frequency performance, enabling higher efficiency and reduced system size. While already widely adopted in consumer applications such as AC adapters, GaN is increasingly being used in high-voltage systems including:
- Power units for AI servers
- On-board chargers (OBCs) for EVs
Demand in these segments is expected to accelerate further as electrification and AI infrastructure continue to expand.
ROHM has been active in GaN development for years. The company established mass production of 150V GaN devices at ROHM Hamamatsu in March 2022. In the mid-power range, ROHM strengthened its supply structure through external collaborations — with TSMC as a key partner.
Key milestones in the collaboration include:
- Adoption of a 650V GaN process from TSMC beginning in 2023
- A December 2024 partnership agreement focused on automotive GaN
The newly announced technology integration represents a deeper evolution of this collaboration.
ROHM aims to complete the technology transfer and establish the new production system in 2027, positioning the company to meet expanding demand in AI server and automotive applications.
Upon completion of the transfer, ROHM and TSMC will amicably conclude their automotive GaN partnership. However, both companies stated they will continue working together to advance higher-efficiency and more compact power supply systems.
By bringing GaN production capabilities fully in-house while leveraging TSMC’s advanced process technology, ROHM is strengthening its long-term competitiveness in next-generation power semiconductors.
Original – ROHM
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STMicroelectronics has introduced MasterGaN6, marking the start of the second generation of its MasterGaN half-bridge family. The new power system-in-package combines an updated BCD driver with a high-performance GaN power transistor featuring 140 mΩ RDS(on), targeting compact, high-efficiency power conversion designs.
Building on the integration approach of the MasterGaN family, MasterGaN6 adds dedicated pins for fault indication and standby functionality to support smarter system management and improved power savings. The devices also integrate LDOs and a bootstrap diode, helping reduce external components while maintaining optimal gate-drive conditions.
ST said the updated driver is engineered for fast timing, enabling high-frequency operation through low minimum on-time and short propagation delays, which can help designers reduce circuit footprint. An ultra-fast wake-up time is also intended to improve burst-mode operation and support higher efficiency at light loads.
MasterGaN6 integrates protections including cross-conduction prevention, thermal shutdown and under-voltage lockout, supporting simplified layouts, smaller PCB designs and a lower bill of materials. The device is rated to handle up to 10 A and is aimed at consumer and industrial applications such as chargers, adapters, lighting power supplies and DC-to-AC solar micro-inverters. Its half-bridge configuration is positioned for multiple topologies, including active-clamp flyback (ACF), resonant LLC, inverse buck converters and power factor correction (PFC) circuits.
To support evaluation and design-in, ST has released the EVLMG6 evaluation board and added a MasterGaN6 model to the eDesignSuite PCB Thermal Simulator.
Original – STMicroelectronics
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Okmetic is participating in WIBASE (Wide Bandgap Semiconductor Power Electronics), a Finnish initiative focused on accelerating wide bandgap semiconductor technologies for next-generation power electronics. The three-year program aims to strengthen national capabilities spanning device processing, prototyping, integration, packaging, testing and lifetime modelling, supporting the shift toward more efficient and sustainable power conversion.
Coordinated by VTT Technical Research Centre, the WIBASE consortium brings together ten partners, including six companies and four Finnish research organizations. The industrial participants cover the value chain from advanced materials and thin-film expertise to engineered silicon substrates and end applications in power electronics. The project is funded by Business Finland.
WIBASE targets several barriers that can slow wide bandgap adoption, including device and module reliability, material defects, thermal management challenges and high-temperature interconnect technologies. The initiative also emphasizes collaboration with leading international research groups and is designed to support technology development, know-how growth and IP creation in wide bandgap power technologies.
Within WIBASE, Okmetic is working with project partners to develop and characterize optimized silicon substrates for GaN power devices. The company highlighted the role of GaN-on-Si in combining gallium nitride’s high electron mobility, thermal stability and high-voltage capability with silicon’s scalability, stable supply base and cost-efficient high-volume manufacturing potential. Okmetic said its contribution builds on its experience supplying Power GaN Substrate wafers, with the goal of providing a reliable and well-controlled silicon platform aligned with performance and manufacturability requirements.
Okmetic expects WIBASE to help establish a Finnish expertise cluster in wide bandgap power electronics, reinforcing technological self-sufficiency, strengthening IP creation and improving competitiveness across the semiconductor and power electronics ecosystem. The outcomes are also positioned to benefit the broader power device sector through advances in materials, silicon substrates and manufacturing know-how.
WIBASE partners in Finland include Okmetic, VTT, Aalto University, LUT University, University of Helsinki, ABB, Picosun, Danfoss Drives, Comptek Solutions and Kempower.
Original – Okmetic
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Infineon Technologies AG shared its Management Board, with approval from the Supervisory Board, resolved on January 30, 2026 to repurchase up to 4 million shares (ISIN DE0006231004) via the stock exchange for a total purchase price of up to €200 million, excluding incidental costs.
The buyback will be executed on Infineon’s behalf by an independent credit institution through Xetra trading on the Frankfurt Stock Exchange. Infineon said the program is scheduled to start on February 23, 2026 and will be completed no later than March 27, 2026 (inclusive).
According to the company, the repurchased shares will be used solely to allocate shares to employees of Infineon or its affiliated companies, as well as members of Infineon’s Management Board and the management boards and boards of directors of affiliated companies, under existing employee participation programs.
The buyback is based on the authorization granted by Infineon’s Annual General Meeting on February 16, 2023. Infineon said the program will be carried out in line with Article 5 of Regulation (EU) No 596/2014 and Commission Delegated Regulation (EU) 2016/1052, which set out the conditions for buyback programs and stabilization measures. The company added that all transactions under the program will be announced in accordance with the applicable requirements and that it will provide regular progress updates on its website, keeping the information publicly available for at least five years from the date of announcement.
Original – Infineon Technologies
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Micro Commercial Components (MCC) has introduced its Gen4 SiC Schottky Diode Series, a new family of high-voltage silicon carbide (SiC) Schottky Barrier Diodes aimed at improving efficiency and thermal performance in demanding power conversion designs. The series includes devices rated at 650 V and 1200 V peak repetitive reverse voltage (VRRM), supporting high-voltage rectification needs across industrial, automotive and energy infrastructure applications.
The new diodes are offered in DPAK, D2-PAK and TO-220AC packages, giving designers multiple options to balance footprint, mechanical integration and heat dissipation. MCC positions the lineup for systems where higher power density and robust thermal management are critical.
Built on Gen4 SiC technology, the devices deliver negligible reverse recovery charge (Qrr) and a low forward voltage drop, typically ≤ 1.65 V at rated current. As majority-carrier devices, SiC Schottky diodes avoid minority-carrier storage effects found in conventional silicon rectifiers, which helps reduce switching losses and supports higher-frequency operation.
MCC said the Gen4 SiC Schottky Diode Series is intended to enable higher switching efficiency, lower thermal losses and improved power density in high-voltage power stages.
Key features and benefits include negligible Qrr for reduced switching losses, low forward voltage drop to minimize conduction losses, fast switching capability for higher-frequency designs, and a positive temperature coefficient of forward voltage to support thermal stability. Package options include DPAK for compact layouts with PCB-based heat spreading, D2-PAK for higher-power thermal performance, and TO-220AC for through-hole mounting with low thermal resistance.
Original – Micro Commercial Components
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Infineon Technologies AG said it plans to extend the contracts of Chief Executive Officer Jochen Hanebeck and Chief Financial Officer Dr. Sven Schneider ahead of schedule, signaling continuity in the company’s leadership and long-term strategic direction. Hanebeck’s contract is set to be extended through the end of March 2032, while Schneider’s term would run until the end of April 2032. Without the planned extensions, their contracts would have expired on April 1, 2027 and May 1, 2027, respectively. Infineon said the Supervisory Board is expected to pass the formal resolution in May.
“Infineon Technologies AG is in very capable hands, which is why we are establishing clarity about the company’s long term direction at an early stage,” said Dr. Herbert Diess, Chairman of Infineon’s Supervisory Board. He pointed to investments in technological strength and a continued focus on competitiveness, adding that Hanebeck, together with Schneider and the Management Board, has positioned the company for the future and will continue on a path of profitable growth.
Hanebeck said the company intends to capitalize on future opportunities in areas such as artificial intelligence, software-defined vehicles and humanoid robotics, emphasizing the importance of translating innovation into customer value at speed. He thanked the Supervisory Board for its support in maintaining the current course.
Schneider highlighted Infineon’s combination of financial stability and a strategy centered on profitable growth, noting that the approach has helped the company perform well even amid macroeconomic uncertainty. He said he looks forward to continuing to build sustainable value for Infineon and its shareholders alongside the broader team.
Original – Infineon Technologies
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SemiQ Inc will debut its latest SiC module developments at the 2026 Applied Power Electronics Conference (APEC). The company will present the portfolio at Booth #1451 during the event, running March 22–26.
SemiQ said the modules are designed to deliver compact, high-efficiency solutions for active front ends (AFE) and for high-performance compressor units used in advanced data center cooling systems. The lineup targets rising power and thermal demands driven by AI-focused data centers, as well as high-power industrial and EV applications.
Visitors to the booth will be able to see SemiQ’s QSiC™ Gen3 SiC modules, which the company says deliver up to 30% reductions in specific on-resistance (RONsp) and turn-off energy losses (EOFF) versus prior generations. SemiQ positions these improvements as a way to cut switching losses, simplify cooling and raise overall system efficiency in applications such as EV charging stations, energy storage systems and industrial motor drives.
Additional module families featured at APEC 2026 include:
- S3 modules, including a 608 A half-bridge with 2.4 mΩ RDS(on) and RθJC of 0.07°C/W
- SOT-227 modules, with five variants offering RDS(on) values of 7.4, 14.5 and 34 mΩ for server power supplies, battery chargers and PV inverters
- B2T1 six-pack modules spanning 19.5 to 82 mΩ RDS(on), designed to minimize parasitics in motor drives and advanced AC-DC converters
- B3 full-bridge modules delivering up to 120 A with RDS(on) as low as 8.6 mΩ, targeting high power density in high-voltage DC-DC systems
“These SiC technologies directly address the challenges faced by those implementing AI infrastructure,” said Dr. Timothy Han, President at SemiQ. “By improving efficiency, and addressing the escalating power demands of datacenters across key application areas, we are expanding the potential for AI to scale sustainably.”
Original – SemiQ
