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ROHM has launched the English-language version of its Engineer Social Hub, an online platform that provides engineers with easier access to the company’s technical information, application know-how, and product support. The platform brings together technical resources for ROHM’s semiconductor products and enables users to search for solutions, interact with ROHM engineers, and participate in technical discussions with other users.
Engineer Social Hub consolidates product-specific FAQs, technical discussions, documentation, videos, and an AI chatbot into a single online resource. Engineers can browse and search FAQs and discussion threads without registering. Registered users can post technical questions, participate in discussions, and receive direct responses from ROHM engineers.
The platform is designed to simplify access to technical support that previously required contacting ROHM or its distribution partners directly. By making product knowledge available online, ROHM aims to help engineers resolve technical issues more quickly and efficiently.
Engineer Social Hub covers a broad range of ROHM product categories, including:
- Analog ICs
- Power semiconductor devices
- Module products
- Resistors
- Other semiconductor components
In addition to manufacturer support, the platform includes community features that allow engineers to exchange ideas and technical knowledge with one another through discussion forums and topic-based communities. Gamification elements reward active participation by allowing users to earn points for contributing to discussions.
According to ROHM, the platform is intended to evolve into a collaborative engineering community where users and ROHM engineers can work together to solve technical challenges and share application expertise.
Key features include:
- Centralized access to ROHM technical documentation and application know-how
- Searchable product-specific FAQs
- Direct technical support from ROHM engineers through discussion forums
- AI chatbot for technical assistance
- Community discussions among engineers
- Technical documents and instructional videos
- Gamification features that reward user participation
The English-language Engineer Social Hub is available globally and forms part of ROHM’s broader effort to improve technical support and accelerate product development for engineers using its semiconductor solutions.
Original – ROHM
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Micro Commercial Components (MCC) has introduced the MIP50R12E1AML-BP and MIP75R12E2ML-BP, expanding its portfolio of 1200 V IGBT modules for high-power industrial applications. Available in industry-standard E1A and E2 packages, the new modules are designed to improve efficiency, thermal performance, and reliability in demanding power conversion systems.
The MIP Series is offered in 50 A and 75 A current ratings and incorporates low collector-emitter saturation voltage (VCE(sat)), integrated ultra-fast soft-recovery freewheeling diodes, and low-inductance package construction to reduce switching losses, improve efficiency, and enhance overall system performance.
The modules feature short-circuit withstand capability of up to 8 μs and support a maximum junction temperature of 175°C, enabling reliable operation under harsh electrical and thermal conditions. An integrated NTC thermistor provides accurate temperature monitoring for improved thermal management and system protection.
According to MCC, the modules are intended for a wide range of industrial applications, including motor drives, uninterruptible power supplies (UPS), welding equipment, servo drives, industrial inverters, renewable energy converters, and industrial power supplies.
Key features include:
- 1200 V collector-emitter voltage (VCE)
- 50 A (MIP50R12E1AML-BP) and 75 A (MIP75R12E2ML-BP) current ratings
- Typical VCE(sat) of 2.05 V and 1.9 V
- Integrated ultra-fast soft-recovery anti-parallel freewheeling diodes
- Low switching losses for improved conversion efficiency
- 8 μs short-circuit withstand capability
- Low-inductance package design
- Integrated NTC thermistor for temperature monitoring
- Maximum junction temperature of 175°C
- Industry-standard E1A and E2 module packages
- RoHS compliant
Original – Micro Commercial Components
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Littelfuse has recognized the technical contributions of Dr. Martin Schulz, Global Principal Application Engineer, for five consecutive years of peer-reviewed research presented at PCIM. His latest work introduces a direct liquid cooling concept for power semiconductor modules that removes the ceramic isolation layer traditionally used in module designs, enabling significant improvements in power density and thermal performance.
The technology was developed and validated in collaboration with Daimler Truck AG and the Steinbeis Institute. Instead of relying on a ceramic isolation layer, the new approach uses the coolant itself as the electrical isolation barrier. According to Littelfuse, the design enables a power module to deliver 800 A of continuous current from a chipset conventionally rated for 600 A while achieving junction-to-coolant thermal resistance below 0.08 K/W.
Testing based on a 700-kilometer Mercedes-Benz GenH2 Truck duty cycle demonstrated up to a 15% reduction in power losses and a projected power-cycling lifetime improvement of up to 800 times compared with conventional ceramic-isolated power modules operating under identical conditions.
Dr. Schulz’s research has consistently challenged established assumptions in power semiconductor design. Over the past five years, his PCIM papers have explored topics including the renewed use of thyristor and gate turn-off (GTO) technologies for megawatt-scale charging infrastructure, evaluating the appropriate use cases for silicon carbide, and, most recently, advanced cooling technologies for power modules.
In recognition of his sustained technical contributions, PCIM presented Dr. Schulz with a certificate of appreciation for five consecutive years of peer-reviewed research presentations.
According to Littelfuse, the direct liquid cooling concept demonstrates how innovative thermal management can improve power density, efficiency, and long-term reliability in high-power applications such as commercial electric vehicles and heavy-duty transportation.
Original – Littelfuse
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Wolfspeed has appointed Andy W. Mattes to its Board of Directors, effective immediately, strengthening the company’s leadership with a technology executive who brings more than four decades of experience across the semiconductor and advanced technology industries.
Mattes has previously served as Chief Executive Officer of Coherent and Diebold Nixdorf, and has held senior leadership positions at Hewlett Packard, Siemens, and McKinsey & Company. He also has more than 20 years of public company board experience and currently serves on the boards of AT&S AG, ams OSRAM AG, and Cohu, Inc.
According to Wolfspeed, Mattes’ expertise in technology, operations, corporate strategy, and governance will support the company’s focus on disciplined execution and long-term growth as it continues to expand its silicon carbide business.
Wolfspeed CEO Robert Feurle said Mattes’ global technology leadership and strategic perspective will be valuable as the company executes its strategic priorities, strengthens its position in the silicon carbide market, and pursues long-term growth opportunities.
Mattes stated that he is joining Wolfspeed during a pivotal stage of its development and highlighted the growing importance of silicon carbide technology for power electronics, electrification, energy efficiency, and advanced industrial applications. He also noted that the company’s leadership has laid important groundwork over the past year and expressed his intention to help advance Wolfspeed’s strategy and long-term value creation.
Original – Wolfspeed
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Axcelis Technologies has announced the successful completion of a customer evaluation of its Purion XEmax high-energy ion implanter at a leading semiconductor foundry. The system has been qualified for the production of Power Management Integrated Circuits (PMICs), supporting the development of next-generation power management devices.
The qualification reflects increasing demand for higher-energy ion implantation processes used in advanced PMIC manufacturing. According to Axcelis, the Purion XEmax is capable of delivering ion implantation energies of up to 15 MeV through its dual RF linear accelerator (LINAC) architecture and patented Boost Technology.
PMICs integrate multiple power management functions—including voltage regulation, battery charging, and thermal management—onto a single chip. They are widely used in applications ranging from consumer electronics to electric vehicles and industrial systems, where efficient power conversion and management are critical.
The Purion XEmax is part of Axcelis’ Purion XE family of high-energy ion implanters, which are designed for advanced semiconductor manufacturing. The product line includes systems optimized for standard high-energy implantation, higher-throughput production, high-volume manufacturing, power semiconductor devices, and ultra-high-energy applications.
According to the company, the Purion XE platform combines RF LINAC technology with high-energy capability, broad process flexibility, and contamination control to support advanced semiconductor fabrication.
Key features of the Purion XEmax include:
- High-energy ion implantation up to 15 MeV
- Dual RF linear accelerator (LINAC) architecture
- Patented Boost Technology
- Optimized for advanced PMIC manufacturing
- Designed for next-generation semiconductor devices requiring ultra-high-energy implantation
Original – Axcelis Technologies
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Micro Commercial Components (MCC) has introduced the MIB30N65AT2Y-TP, a 650 V Trench Field-Stop (TFS) IGBT designed for high-efficiency industrial power conversion applications. The device combines low conduction losses, high current capability, and robust thermal performance in a compact D2-PAK package, targeting applications such as industrial power supplies, renewable energy systems, EV charging equipment, and uninterruptible power supplies (UPS).
The MIB30N65AT2Y-TP features a 650 V collector-emitter voltage rating and supports a continuous collector current of 30 A. Built using Trench Field-Stop technology, the IGBT delivers a typical collector-emitter saturation voltage (VCE(sat)) of 1.75 V, helping reduce conduction losses while improving overall power conversion efficiency.
The device also supports a pulse collector current of up to 120 A, providing robustness against transient overload and high inrush current conditions. Smooth switching characteristics make it suitable for soft-switching converter topologies, while a positive temperature coefficient simplifies parallel operation by promoting natural current sharing between devices.
Designed for demanding operating environments, the IGBT supports a maximum junction temperature of 175°C and is housed in a surface-mount D2-PAK package that provides efficient thermal dissipation while enabling automated PCB assembly.
The MIB30N65AT2Y-TP is intended for a variety of high-power applications, including:
- Industrial power supplies
- Renewable energy systems
- EV charging equipment
- Welding power converters
- Uninterruptible power supplies (UPS)
- High-current switching systems
Key specifications include:
- 650 V collector-emitter voltage rating
- 30 A continuous collector current
- 120 A pulse collector current
- Typical VCE(sat) of 1.75 V
- Trench Field-Stop (TFS) technology
- Smooth switching performance
- Positive temperature coefficient
- Maximum junction temperature of 175°C
- D2-PAK package
- RoHS compliance
Original – Micro Commercial Components
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Toshiba Electronic Devices & Storage Corporation has introduced the XPMR7404PB, a 40 V N-channel power MOSFET for automotive applications including inverters, semiconductor relays, load switches, and motor drives. The device features the company’s new SOP Advance(EWF) package, which is designed to reduce conduction losses, improve thermal performance, and simplify automated manufacturing inspection.
The XPMR7404PB incorporates a post-less package structure that connects the MOSFET die to the external leads using a copper clip, reducing current path resistance and increasing current-carrying capability. A source-coupled design connects the source terminal to the underside of the package, increasing the PCB contact area to lower package resistance and improve heat dissipation.
According to Toshiba, the new package reduces package resistance by approximately 54% compared with the previous SOP Advance(WF) design. The XPMR7404PB also achieves approximately a 6% reduction in drain-source on-resistance (RDS(on)) and a 33% reduction in channel-to-case thermal impedance (Zth(ch-c)) compared with the existing XPHR7904PS MOSFET, improving efficiency and reducing operating temperatures.
The package incorporates a wettable flank structure that enhances solder joint visibility, enabling more reliable automated visual inspection (AVI) during PCB assembly.
The MOSFET is qualified to the AEC-Q101 automotive reliability standard and is intended for automotive power electronics requiring high current capability and efficient thermal management.
Toshiba also disclosed two additional SOP Advance(EWF) MOSFETs currently under development, the XPMR5904PB and XPMR8504PB, which will expand the product family.
Key specifications include:
- 40 V drain-source voltage (VDSS)
- 160 A continuous drain current
- 480 A pulsed drain current
- Maximum RDS(on) of 0.74 mΩ at VGS = 10 V
- Maximum RDS(on) of 1.28 mΩ at VGS = 6 V
- Maximum channel-to-case thermal impedance of 0.59°C/W
- Maximum channel temperature of 175°C
- SOP Advance(EWF) package with wettable flank structure
- AEC-Q101 qualified for automotive applications
Original – Toshiba
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Siltronic AG has announced that its Supervisory Board has extended the contract of Chief Operating Officer (COO) Klaus Buchwald by five years, through May 31, 2032. The extension comes ahead of the original contract expiration in May 2027 and reinforces continuity within the company’s executive leadership team.
With the renewal, Buchwald will continue to serve alongside Chief Executive Officer Dr. Michael Heckmeier and Chief Financial Officer Claudia Schmitt, maintaining the current Executive Board structure for the coming years.
Buchwald joined Siltronic’s Executive Board in June 2024 and has been responsible for the company’s operations during a challenging period for the semiconductor wafer industry. According to the company, he has focused on improving operational efficiency while advancing initiatives related to digitalization and the use of artificial intelligence in manufacturing and business processes.
The early contract extension reflects the Supervisory Board’s confidence in the company’s current leadership and its strategy to strengthen operational competitiveness while maintaining long-term management stability.
Siltronic is one of the world’s leading manufacturers of silicon wafers used in semiconductor device production, serving customers across the automotive, industrial, consumer electronics, and communications markets.
Original – Siltronic
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Navitas Semiconductor and Magnachip Semiconductor have announced a strategic partnership to accelerate the adoption of silicon carbide (SiC) technologies in high-voltage (HV) and ultra-high-voltage (UHV) power applications. Under the agreement, Magnachip will license Navitas’ GeneSiC™ Trench-Assisted Planar (TAP) technology to expand its power semiconductor portfolio into the SiC market.
The licensing agreement covers GeneSiC technologies with voltage ratings of 1200 V, 2300 V, 3300 V, and higher, enabling Magnachip to develop SiC devices for next-generation high-power conversion systems.
As part of the collaboration, Magnachip will also gain access to Navitas’ established SiC supply chain and materials ecosystem to support faster product development and market entry. The companies plan to transfer, qualify, and internalize the licensed technology at Magnachip’s manufacturing facility in South Korea while maintaining compatibility with Navitas’ existing technology platform.
The partnership targets a broad range of high-power applications, including:
- Energy transmission and grid infrastructure
- Battery energy storage systems (BESS)
- Industrial electrification
- Automotive power systems
- High-voltage power conversion
- Ultra-high-voltage power electronics
The companies stated that the agreement extends beyond the current SiC licensing arrangement, with additional areas of collaboration expected to be announced in the future.
For Navitas, the partnership expands the reach of its GeneSiC technology into the high-voltage power semiconductor market through licensing and technology collaboration. For Magnachip, the agreement provides a pathway into the rapidly growing SiC market, complementing its existing MOSFET and power semiconductor portfolio while enabling the development of higher-voltage, higher-efficiency power conversion solutions.
Original – Magnachip Semiconductor
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Micro Commercial Components (MCC) has introduced the MCACLD70N04YHE3-TP, a 40 V N-channel power MOSFET qualified to the AEC-Q101 automotive reliability standard. Designed for high-current automotive power systems, the device combines ultra-low on-resistance with high current capability and efficient thermal performance, making it suitable for electric vehicles, battery management systems, and power distribution applications.
Built on advanced Split Gate Trench (SGT) MOSFET technology, the MCACLD70N04YHE3-TP delivers a maximum RDS(on) of just 0.7 mΩ at a gate-source voltage of 10 V, helping reduce conduction and switching losses while improving overall system efficiency.
The MOSFET supports a continuous drain current of up to 350 A and features an ultra-low junction-to-case thermal resistance of 0.4°C/W, enabling efficient heat dissipation under high-load operating conditions. The device is housed in a compact DFN5060-C package, supporting high power density while minimizing PCB footprint.
With a 40 V drain-source voltage rating, the MCACLD70N04YHE3-TP is optimized for 12 V and 24 V automotive power architectures and is intended for a range of high-current power applications, including:
- Battery management systems (BMS)
- DC-DC converters
- Power distribution modules
- Motor drives
- Load switches
- Automotive power systems
Key specifications include:
- 40 V drain-source voltage
- AEC-Q101 qualification
- Maximum RDS(on) of 0.7 mΩ at VGS = 10 V
- Continuous drain current up to 350 A
- Split Gate Trench (SGT) MOSFET technology
- Junction-to-case thermal resistance of 0.4°C/W
- DFN5060-C package
Original – Micro Commercial Components
