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Navitas Semiconductor announced an expanded distribution agreement with Avnet, establishing Avnet as a globally franchised strategic distribution partner.
The move is part of Navitas’ ongoing consolidation of franchised distribution and significantly broadens its channel presence through Avnet, one of the world’s largest electronic component distributors. It follows strong traction by Avnet Silica in serving customers across Europe.
Under the agreement, Avnet will provide technical and commercial support for Navitas’ GaN and SiC high-voltage, high-power wide bandgap devices. The partnership is intended to accelerate deployments in AI data centers, high-performance computing, renewable energy, grid infrastructure and industrial electrification.
The consolidated model allows customers to benefit from regional specialists such as Avnet Silica in Europe, while gaining a globally aligned framework with Avnet across all geographies for fast access to Navitas products and consistent, expert technical support.
“This builds considerably on the successful role that Avnet Silica has played in reaching and developing our strategically important European customers,” said Alessandro Squeri, Vice President Global Distribution, Operations & Transformation, Navitas. “As we consolidate our distribution network to align with high-power market focus, expanding Avnet’s franchise globally was a natural next step, and their engineering expertise, global reach and deep customer relationships make them an ideal partner to accelerate adoption of our GaN and SiC platforms worldwide.”
“The global expansion of the Avnet Silica partnership is testament to the strength of our teams in supporting customers in these demanding high-power markets,” said Alex Iuorio, Senior Vice President, Global Supplier Development, Avnet. “Navitas’ leadership in wide bandgap innovation aligns strongly with Avnet’s commitment to enabling advanced, energy-efficient solutions. We look forward to extending this collaboration as customers drive the next wave of electrification and high-performance power design.”
Original – Navitas Semiconductor
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VisIC Technologies announced the successful second closing of its Round B funding, securing $26 million to advance GaN power semiconductor technology for electric vehicles. The round was led by a global semiconductor leader, with Hyundai Motor Company and Kia joining as a strategic investor. The milestone strengthens VisIC’s position in high-performance GaN power devices for automotive traction inverters and next-generation mobility.
The global EV market is pushing for higher efficiency, longer driving range, and more sustainable power electronics. Traditional silicon is reaching its limits, and while SiC offers performance advantages, cost remains a barrier for mass adoption. VisIC’s D³GaN™ platform targets both 400 V and 800 V EV architectures, enabling lighter, smaller, and more energy-efficient traction inverters with scalability and reliability.
The new funding will accelerate key programs:
- Optimization, qualification, and release of Gen3 750 V GaN dice and power modules
- Development of Gen4 1350 V GaN technology to cover the full spectrum of EV designs
- Supply-chain stabilization and ramp-up of GaN deliveries for traction inverters
- Expansion of GaN solutions for emerging 800 V data-center power applications
“This investment marks a major milestone for VisIC and the global EV industry. Our D³GaN technology is redefining power electronics for electric vehicles, and the support of our strategic partners accelerates our mission to deliver high-efficiency, scalable solutions for the next generation of mobility,” said Tamara Baksht, CEO of VisIC Technologies.
“Hyundai Motor Company and Kia are committed to advancing sustainable mobility. Partnering with VisIC enables us to integrate cutting-edge GaN technologies into our EV platforms, enhancing efficiency, reliability, and performance as we shape the future of electric transportation,” said Hyundai Motor Company and Kia.
Original – VisIC Technologies
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The European Investment Bank (EIB) and STMicroelectronics have signed a €500 million financing agreement to support Europe’s competitiveness and strategic autonomy. This is the first tranche of a broader €1 billion credit line recently approved by the EIB for ST, a leading semiconductor manufacturer with a strong European footprint in Italy, France and Malta serving automotive, industrial, personal electronics and communication infrastructure markets.
The new financing will back ST’s investments in innovative semiconductor technologies and devices across Italy and France, spanning both research and development and high-volume manufacturing. Approximately 60% of the funding will support manufacturing capabilities at key sites including Catania, Agrate and Crolles, with the remaining 40% directed to R&D. Since 1994, the EIB has supported nine ST projects totaling about €4.2 billion.
“Europe’s ability to lead in semiconductor innovation is vital for our competitiveness, resilience and climate goals. This agreement reflects the EIB’s commitment to supporting strategic industries that enable the green and digital transitions and strengthen Europe’s technological sovereignty,” said Gelsomina Vigliotti, EIB Vice-President.
“ST continues to be committed to strengthening Europe’s semiconductor ecosystem, and this significant loan from EIB aims at bolstering our efforts in R&D for differentiated technologies and high-volume manufacturing across our sites in Italy and France,” said Jean-Marc Chery, President and CEO of STMicroelectronics. “ST’s longstanding collaboration with the EIB underscores our commitment to ensuring European technology leadership in the global semiconductor market.”
“Semiconductors are at the heart of modern economies, powering everything from electric vehicles to digital infrastructure. By financing ST’s investments in research and advanced manufacturing, we are helping Europe secure critical technologies and create high-skilled jobs for the future,” added Ambroise Fayolle, EIB Vice-President.
The announcement follows last week’s visit by an EIB delegation led by Vice-Presidents Gelsomina Vigliotti and Ambroise Fayolle to ST’s Catania facility, a state-of-the-art site covering the full Silicon Carbide (SiC) value chain and a key element of the Bank’s financing focus.
Original – STMicroelectronics
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Infineon Technologies AG announced that all of its global operations are now powered by 100% green electricity—an important milestone on the company’s path to carbon neutrality by 2030. Infineon has also surpassed its 2025 interim target for Scope 1 and 2 emissions, achieving a reduction of more than 80% versus the 2019 base year, while doubling revenue over the same period. Earlier this year in May, the Science Based Targets initiative (SBTi) validated the company’s science-based targets.
“Infineon semiconductors help societies decarbonize while meeting the growing energy demands of modern life,” said Elke Reichart, Member of the Management Board of Infineon and Chief Digital and Sustainability Officer. “We at Infineon continue to decarbonize our own value creation. We are proud that all Infineon locations globally are now running on 100% green electricity.”
The transition builds on a multi-year program to cut CO2 emissions and improve resource efficiency in manufacturing. Infineon converted its European sites to 100% green electricity in 2021, followed by North America in 2022. Major manufacturing sites in Malaysia, Kulim and Melaka, transitioned in 2023. During 2024 and 2025, remaining production locations in China, Indonesia and Singapore completed the shift, alongside all Research, Development, Sales and Marketing sites worldwide.
Infineon’s achievement aligns with the RE100 standard, reflecting its commitment to long-term renewable sourcing. This year, the company signed long-term Power Purchase Agreements for wind and solar in Germany and Spain. On-site photovoltaic installations are being added in Kulim and Melaka, while facilities in Warstein, Regensburg, Villach, Wuxi and Singapore have been generating solar power for some time.
In parallel, Infineon is expanding silicon carbide (SiC) production in Dresden (Germany) and Kulim (Malaysia) to support the global build-out of sustainable power. Its semiconductor innovation underpins energy generation from solar and wind, grid stabilization and the efficient, reliable powering of Artificial Intelligence. To advance state-of-the-art sustainable manufacturing, the company is deploying the latest greenhouse gas abatement systems and highly efficient equipment in addition to sourcing renewable energy.
Original – Infineon Technologies
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Siemens and GlobalFoundries have formed a new strategic collaboration to combine complementary AI-driven capabilities that enhance semiconductor manufacturing and adjacent advanced industries, targeting gains in efficiency, security and reliability. Under a new memorandum of understanding, the companies will focus on fab automation, electrification, and digital solutions and software spanning chip development through product lifecycle management.
A central element of the collaboration is the deployment of AI-enabled software, sensors and real-time control systems in fab automation to address rising demand for reliable semiconductors and autonomous platforms. By leveraging centralized automation and predictive maintenance, Siemens and GF aim to increase equipment availability and operational efficiency in chip production, with solutions designed to scale across other advanced industries. The partners intend to develop and deploy these capabilities within their own operations to deliver enhanced offerings.
The expanded relationship comes amid unprecedented demand for essential semiconductors and autonomous platforms in artificial intelligence, defense, energy and connectivity. By teaming up, Siemens and GF plan to accelerate growth, strengthen security and reliability, and extend their impact across the ecosystem.
“Our economy runs on Silicon—one wafer at a time. Chips are critical for applications like robotics or connectivity and for bringing AI into the physical world and industry. We are collaborating to make global semiconductor supply chains more resilient and to enable efficient localized manufacturing around the world,” said Cedrik Neike, Member of the Managing Board of Siemens AG and CEO Digital Industries.
“Secure, locally manufactured semiconductors are at the core of the AI transition—from cloud to the physical world, bringing intelligence into devices we use every day and enabling applications we couldn’t imagine a few years ago,” said Tim Breen, CEO of GlobalFoundries. “Our unique collaboration with Siemens allows us to go faster—to build the technologies that make this possible—differentiated, energy-efficient, connected and secure chips across a wide range of next-generation applications.”
Siemens brings a comprehensive portfolio of industrial, energy and building automation and digitalization technologies, including advanced software for chip design and manufacturing, fab automation and product lifecycle management. Using these solutions, the companies will enable collaboration across the semiconductor lifecycle and deliver high-performance, reliable devices at scale.
GF, together with MIPS, a GF company and global leader in RISC-V processor IP, contributes process technology and design capabilities to accelerate tailored solutions that support Siemens’ goal of enabling autonomous platforms and physical AI chips at scale. The publicly listed U.S. company operates manufacturing facilities in the USA, Asia and Europe, including Europe’s largest semiconductor production site in Dresden with approximately 3,000 employees.
Original – GlobalFoundries
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Wise Integration, Powernet and KEC have signed a strategic memorandum of understanding to co-develop next-generation switched-mode power supply (SMPS) solutions tailored for AI server applications in South Korea. The collaboration supports the country’s broader push to scale AI infrastructure and deploy higher-density data centers.
Under the agreement, Wise Integration will provide GaN power devices, digital-control know-how and technical support. Powernet Technologies Corporation will lead new SMPS designs built on Wise’s WiseGan® and WiseWare® technologies. KEC Corporation will oversee backend manufacturing, including module integration and system-in-package production optimized for the thermal and reliability demands of AI-server racks.
The partners expect the program to accelerate competitive AI-server power supply designs, create new business opportunities in Korea’s AI-server market and shorten time-to-market by leveraging WiseGan® and WiseWare®. The initiative extends an earlier Wise Integration–Powernet collaboration focused on compact, digitally controlled power supplies for faster, smaller and more energy-efficient equipment.
AI servers require high power, generate significant heat and depend on SMPS architectures that convert high-voltage inputs (such as 400 V) to stable 48 V rails with minimal loss. GaN devices paired with digital control enable higher switching frequencies, improved efficiency and tighter management of fast, high-current load transients—attributes well suited to these workloads.
The effort aligns with South Korea’s investments in AI-dedicated data centers, including high-performance GPU clusters and digital infrastructure that demand more efficient, compact and scalable power-conversion systems. “Korea is moving quickly to build the next generation of AI data centers, and power architecture is a critical piece of that effort. Working with Powernet and KEC lets us bring GaN-based digital control into server-grade designs at scale—delivering the efficiency, thermal performance, and responsiveness that modern AI hardware depends on,” said Ghislain Kaiser, CEO of Wise Integration.
Beyond the MoU, Wise Integration continues to broaden its GaN plus digital-control platform to support partners as switching frequencies rise, thermal budgets tighten and efficiency targets become more aggressive. The company recently introduced WiseWare® 1.0 for totem-pole PFC and LLC topologies, a fully digital controller that, while aimed today at gaming, displays and industrial systems, shares the same architecture—high-frequency GaN operation, compact form factor and digitally managed efficiency—that naturally extends to server-class designs envisioned under this Korea-focused collaboration.
Original – Wise Integration
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Wolfspeed Inc. announced that its automotive MOSFETs will power onboard charger systems for Toyota Battery Electric Vehicles. The adoption underscores Toyota’s confidence in Wolfspeed’s ability to meet stringent quality and long-term reliability requirements.
“Toyota is known for its uncompromising approach to quality and reliability, and we’re honored to be supporting their next wave of electrification,” said Robert Feurle, Chief Executive Officer. “Wolfspeed’s U.S.-based supply chain and domestic silicon carbide manufacturing footprint ensure the stability and continuity they need to achieve their electrification goals.”
Silicon carbide has become the industry standard for high-voltage onboard power systems as the automotive sector accelerates toward clean energy vehicles. Beyond enabling fast, efficient, high-power-density traction inverters, silicon carbide brings clear advantages to onboard automotive auxiliary power systems such as onboard chargers—supporting shorter charging times, reducing energy loss across the vehicle, improving driving range, and lowering recharge costs over the vehicle’s lifespan.
“Our work with Toyota is built upon years of trust in engineering expertise, supply reliability, as well as a shared obsession with quality,” said Cengiz Balkas, Chief Business Officer. “This reinforces our role in driving electrification with silicon carbide technology that delivers performance, efficiency and safety.”
Wolfspeed supports a broad range of EV platforms directly with OEMs and through Tier 1 partners, making its technology a foundational element of the expanding EV ecosystem.
Original – Wolfspeed
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Micro Commercial Components introduced the MCTL011N20YH, a 200 V N-channel MOSFET designed for high-power systems where efficiency, thermal performance and board space are critical. Built on Split Gate Trench MOSFET Technology and housed in a thermally efficient TOLL-8L package, the device delivers low conduction and switching losses with low parasitic inductance—supporting fast, clean transitions and stable operation up to Tj(max) = 175 °C.
The optimized thermal path of the TOLL-8L package improves heat dissipation, enabling higher current handling with reduced temperature rise and lighter cooling requirements. This helps engineers increase power density, meet tight efficiency targets and enhance long-term reliability in motor drivers, DC-DC converters, UPS systems and server power modules.
Features and benefits:
- 200 V N-channel power MOSFET
- Split Gate Trench MOSFET Technology for low losses and high efficiency
- TOLL-8L surface-mount power package with compact footprint
- Low parasitic inductance for fast, clean switching
- Excellent thermal performance and heat dissipation
- High current handling capability
- Maximum junction temperature: Tj(max) = 175 °C
- Mechanically robust package suited for harsh and industrial environments
Original – Micro Commercial Components
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Infineon Technologies AG introduced new package options for its CoolSiC™ MOSFET 750 V G2 technology, engineered to raise system efficiency and power density in automotive and industrial power conversion. The devices are available in Q-DPAK and D2PAK, with a portfolio offering typical RDS(on) values up to 60 mΩ at 25°C.
The extended lineup targets onboard chargers and HV-LV DCDC converters in automotive, as well as server and telecom SMPS and EV charging infrastructure on the industrial side. Ultra-low RDS(on) of 4 mΩ enables applications demanding exceptional static-switching performance, including eFuse, high-voltage battery disconnect switches, solid-state circuit breakers and solid-state relays—supporting more efficient, compact and reliable system designs.
A key differentiator is the top-side cooled Q-DPAK package, delivering optimal thermal performance and robustness for high-power use cases. The technology also achieves excellent RDS(on) × QOSS and best-in-class RDS(on) × Qfr, reducing switching losses in both hard- and soft-switching topologies and delivering superior efficiency in hard-switching conditions.
CoolSiC MOSFETs 750 V G2 combine a high threshold voltage VGS(th),typ of 4.5 V at 25°C with an ultra-low QGD/QGS ratio to reinforce robustness against parasitic turn-on (PTO). The platform supports extended gate-drive capability with static gate voltages down to -7 V and transient voltages down to -11 V, providing wider design margins and strong compatibility with other devices in the market.
Samples are available now: Q-DPAK in 4/7/20/33/40/50 mΩ and D2PAK in 7/25/33/40/50/60 mΩ.
Original – Infineon Technologies
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GlobalFoundries announced that its Board of Directors has appointed Sam Franklin as Chief Financial Officer. Franklin previously served as Senior Vice President of Business Finance & Operations and Investor Relations and most recently as Interim CFO.
“We are delighted to have Sam formally appointed as CFO,” said Tim Breen, CEO of GF. “His proven leadership and financial expertise will accelerate GF’s momentum and capitalize on the significant opportunities ahead. As we continue to drive profitability and deliver differentiated technologies for the scaling of AI from the data center to the physical world, Sam’s ability to deliver results and partner across the organization will be critical to our success.”
Franklin brings extensive financial leadership experience and a strong record of driving operational excellence and strategic growth. Since joining GF in 2022, he has held senior roles spanning finance operations, business finance, investor relations, capital markets and treasury. His deep understanding of GF’s business and commitment to disciplined financial management position him to lead the company’s finance and operations organization as GF advances its long-term strategy.
“I am thrilled to take on this role and support the acceleration of GF’s mission to deliver essential chip technologies to our customers,” said Franklin. “As the secular drivers and demand for semiconductors continue to ramp, GF is building a strong foundation for its next phase of robust, sustainable and profitable growth. I look forward to working with our talented teams across the world to advance our strategic priorities, drive operational excellence and create long-term value for our shareholders.”
Original – GlobalFoundries
