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Infineon Technologies has launched a share buyback program covering up to 3 million shares, following a Management Board resolution on July 17, 2026 and approval from the Supervisory Board. While the authorization allows for a total purchase price of up to €300 million, Infineon has agreed with the financial institution executing the current program that purchases will not exceed €225 million.
The buyback will run from August 10 through November 13, 2026, at the latest, with an independent credit institution purchasing shares through Xetra trading on the Frankfurt Stock Exchange.
Unlike a conventional capital-return program, the repurchased shares are intended exclusively for allocation under Infineon’s existing employee participation programs. Eligible recipients include employees of Infineon and affiliated companies, members of Infineon’s Management Board, and management or board members of affiliated companies. The announcement therefore does not represent a direct reduction in Infineon’s outstanding share count for the purpose of returning excess capital to shareholders.
The program is based on the authorization granted by Infineon shareholders at the Annual General Meeting on February 16, 2023. Purchases will be conducted under applicable EU market-abuse and share-buyback regulations, with Infineon publishing regular transaction updates during the program.
At the maximum 3 million shares, the €225 million implementation ceiling implies an average purchase price limit of €75 per share if the entire authorized share quantity were acquired. However, the actual number of shares purchased and average price will depend on market conditions during the August-November execution period.
For the power semiconductor market, the announcement has limited direct operational significance because it does not alter Infineon’s manufacturing capacity, technology roadmap or investment plans. It does, however, represent a potentially sizable cash commitment associated with employee equity programs at a time when Infineon is simultaneously investing heavily in SiC, GaN and AI data-center power semiconductor capacity.
Original – Infineon Technologies
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Micro Commercial Components (MCC) has introduced the SICW30120DG5M-BP, a new 1200V, 30A silicon carbide (SiC) Schottky Barrier Diode designed for high-voltage and high-frequency power conversion systems.
The device combines a 1200V reverse voltage rating with a 30A average forward current capability, targeting applications where higher switching frequencies, efficiency and power density are key design requirements. It is supplied in an industry-standard TO-247AB through-hole package, supporting effective heat dissipation and straightforward heatsink integration.
Based on Merged PiN Schottky (MPS) SiC technology, the SICW30120DG5M-BP offers zero reverse recovery current. Eliminating reverse recovery losses can reduce switching losses and EMI, making the device particularly suitable for high-frequency converter architectures where conventional silicon rectifiers can impose significant recovery-related losses.
The diode has a maximum forward voltage of 1.6V, helping limit conduction losses, while its 180A surge current capability provides additional robustness against inrush currents and transient overload conditions. The MPS architecture combines the switching characteristics of a Schottky diode with enhanced surge-current capability.
The SICW30120DG5M-BP supports a maximum junction temperature of 175°C, allowing operation in thermally demanding power systems and potentially reducing cooling requirements. Its combination of high blocking voltage, zero reverse recovery and high-temperature capability is particularly relevant for next-generation high-power conversion equipment.
Target applications include switched-mode power supplies, power factor correction circuits, EV charging infrastructure, motor drives, renewable energy systems and industrial power conversion equipment.
The introduction expands MCC’s SiC power semiconductor portfolio into higher-voltage and higher-current applications, addressing growing demand for SiC rectifiers as designers move toward faster-switching, more efficient and increasingly power-dense converter architectures.
Original – Micro Commercial Components
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Micro Commercial Components (MCC) has introduced the MURZ3065P-BP and MURZ6065P-BP, a new family of 650V superfast recovery rectifiers targeting high-frequency power conversion applications across industrial, renewable energy and automotive systems.
The new rectifiers combine a 650V reverse voltage rating with average forward current ratings of 30A for the MURZ3065P-BP and 60A for the MURZ6065P-BP. Both devices are housed in rugged TO-247AD packages designed to provide effective thermal dissipation and straightforward heatsink mounting in high-power systems.
A key feature of the series is its fast reverse recovery performance. The devices offer reverse recovery times of 95ns and 105ns, helping reduce switching losses as converter operating frequencies increase. Soft recovery characteristics and low reverse recovery charge also help limit electromagnetic interference and improve switching behavior.
Typical forward voltage is 1.29V and 1.28V, respectively, helping reduce conduction losses and improve overall conversion efficiency. The devices also feature near-zero temperature coefficient characteristics, supporting stable forward-voltage and switching behavior across a broad operating temperature range and simplifying thermal management.
For applications exposed to transient overloads, the rectifiers provide surge current capability of up to 220A and 400A, depending on the device. MCC also uses planar-structure die technology to support device reliability and manufacturing consistency.
The combination of high current capability, fast and soft recovery, low forward voltage and robust thermal characteristics makes the MURZ Series suitable for power factor correction circuits, uninterruptible power supplies, industrial power supplies, EV charging equipment, welding systems and inverter applications.
The launch expands MCC’s high-voltage rectifier portfolio as power electronics designers seek lower switching and conduction losses in increasingly high-frequency and power-dense converter architectures.
Original – Micro Commercial Components
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Wolfspeed and LITEON Technology have formed a strategic partnership following the successful qualification of Wolfspeed’s silicon carbide technology for LITEON’s 800VDC power sidecar and compute-rack power supply unit platforms. The systems are being developed for next-generation AI data centers serving leading hyperscale customers, with potential adoption across additional cloud service provider platforms.
The collaboration represents another significant commercial entry point for SiC beyond its established automotive and industrial markets. Rapidly increasing AI compute power requirements are pushing data center operators toward 800VDC architectures, where higher distribution voltages can improve efficiency, increase power density and support the scaling of increasingly power-intensive AI racks.
LITEON will use Wolfspeed SiC MOSFETs within these architectures to improve power-conversion efficiency across a broad operating range. According to the companies, the technology can also reduce bill-of-material costs and simplify component procurement, making SiC attractive not only from an efficiency perspective but also at the overall system level.
A strategically important element of the partnership is Wolfspeed’s 200mm SiC manufacturing platform. LITEON plans to leverage this manufacturing capability as it develops power systems intended for hyperscale deployments, where semiconductor availability, manufacturing scale and supply-chain reliability become increasingly important as deployments move from qualification into volume production.
The qualification provides Wolfspeed with direct exposure to the emerging 800VDC AI data center power ecosystem. While no revenue, volume or deployment timetable was disclosed, successful qualification for LITEON’s power sidecar and compute-rack PSU platforms creates the potential for Wolfspeed devices to scale alongside future hyperscale and CSP deployments.
For LITEON, the partnership strengthens its ability to offer high-efficiency and high-reliability power infrastructure as AI data centers transition toward higher-voltage DC distribution. Wolfspeed CEO Robert Feurle highlighted the combination of advanced SiC technology and scalable supply capacity, while LITEON said the integration strengthens the performance, efficiency and reliability of its next-generation AI infrastructure platforms.
From a power semiconductor market perspective, the announcement is another indication that AI infrastructure is developing into an important incremental demand driver for SiC. Historically dominated by EV traction inverters, renewable energy and industrial applications, SiC is increasingly being positioned in high-power AI data center PSUs, BBUs and 800VDC distribution architectures. If hyperscale adoption accelerates, this could broaden the SiC demand base and create a meaningful new growth market for high-voltage SiC MOSFET suppliers such as Wolfspeed.
Original – Wolfspeed
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Danfoss has appointed Kern Jain as President of Danfoss Power Electronics, effective August 1, 2026. Jain succeeds Dominic Dorfner, who has left the company at his own request following a planned leadership transition.
Jain has been with the Danfoss Group for three years and most recently served as Segment CFO of Danfoss Power Electronics and Drives. He previously served as a board member of Semikron Danfoss and brings more than 20 years of experience across global technology and pharmaceutical companies.
The transition was prepared over several months, with Jain and Dorfner working together to ensure continuity. This included Jain meeting customers and colleagues at the PCIM Europe Expo & Conference in Nuremberg ahead of formally assuming the role.
As President, Jain will lead the business unit responsible for developing and marketing Danfoss’ power electronics products and solutions. The unit plays a central role in the group’s electrification strategy, serving applications that require advanced power conversion technologies.
The leadership change coincides with the renaming of the business unit from Semikron Danfoss to Danfoss Power Electronics, reinforcing its position within the Danfoss Group’s core electrification business. The established Semikron Danfoss brand will continue to be used for products and solutions.
Within the broader Danfoss Power Electronics and Drives segment, the company now operates two distinct businesses: Danfoss Drives and Danfoss Power Electronics.
Mika Kulju, President of Danfoss Power Electronics and Drives and Chairman of the Danfoss Power Electronics Board, highlighted Jain’s existing knowledge of the power electronics business as an important factor in ensuring leadership continuity and advancing the company’s strategic priorities.
Jain said Danfoss Power Electronics sits at the heart of the group’s electrification portfolio and emphasized its role in creating value for customers as demand for power electronics and electrification solutions continues to develop.
Original – Semikron Danfoss
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Power Integrations has announced a major extension of its PowiGaN gallium nitride technology to a 2200 V rating, which the company says exceeds the voltage capability of other commercially available GaN technologies. The development significantly expands the addressable voltage range for GaN and targets emerging high-voltage applications including AI data centers, electric vehicles, renewable energy, battery storage and HVDC infrastructure.
The 2200 V technology is particularly relevant as power architectures migrate toward higher DC bus voltages to improve efficiency and power density. Power Integrations highlighted next-generation AI data centers as a major opportunity, with industry roadmaps moving beyond today’s 800 VDC architectures toward potential 1500 V distribution systems. The additional voltage headroom provided by 2200 V GaN could enable designers to use GaN in applications where voltage requirements have historically favored silicon carbide.
Power Integrations is already extending GaN into these higher-voltage systems. Its 1700 V PowiGaN ICs are being designed into single-stage auxiliary power applications in data centers, while 1250 V devices provide an alternative to stacked lower-voltage switches in the main power path of 800 VDC architectures. The new 2200 V platform pushes this strategy further by providing sufficient voltage margin for future higher-voltage buses.
The development is strategically important for the competitive positioning of GaN versus SiC. GaN has traditionally delivered advantages in switching frequency and power density but has been constrained by lower commercially available voltage ratings. High-voltage applications have therefore remained an important stronghold for SiC. By extending GaN to 2200 V, Power Integrations is attempting to bring GaN’s high-frequency characteristics into applications previously considered beyond its practical voltage range.
The potential system-level impact could be significant. Higher-voltage GaN devices could reduce the need to series-connect multiple lower-voltage switches, simplifying power stages while reducing component count and potentially improving power density and reliability. Power Integrations specifically identifies solar inverters, HVDC systems, advanced industrial power conversion, EV systems and data center infrastructure as potential applications.
The announcement also highlights how AI infrastructure is accelerating technology competition between GaN and SiC. Yole Group analyst Roy Dagher noted that GaN’s historical voltage ceiling has limited its participation in the main power path of high-voltage data center architectures, leaving much of this opportunity to SiC. According to the figures cited in the announcement, Yole expects the power GaN device market to reach $3.5 billion by 2031.
Original – Power Integrations
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Para Light Electronics has launched its ThermaFlat I and ThermaFlat II silicon carbide MOSFET families, targeting a key thermal challenge in high-power conversion: the increase in MOSFET on-resistance as junction temperature rises. The portfolio targets AI and data-center power supplies, battery backup and UPS systems, EV charging, energy storage, photovoltaic inverters, variable-frequency drives and other industrial power applications.
The central feature of the new platform is what Para Light calls Ultra-Low RDS(on) Drift technology. Conventional SiC MOSFETs experience increasing on-resistance at elevated junction temperatures, which raises conduction losses and can increase cooling requirements. ThermaFlat is designed to keep on-resistance comparatively stable across a broad operating-temperature range, with the objective of improving full-load efficiency and simplifying thermal design.
In benchmark testing cited by Para Light, its 650V, 21 mΩ TO-247 device showed only approximately 8% RDS(on) variation as junction temperature increased from -25°C to +125°C. The company says this is significantly lower than the temperature coefficients of conventional SiC devices. Para Light also states that its 1200V ThermaFlat family exhibits similarly low temperature coefficients for high-power conversion architectures.
Broad portfolio spans 650V, 1200V and 1700V devices. The 650V lineup includes devices with RDS(on) ratings ranging from 8 mΩ to 36 mΩ, while the 1200V portfolio ranges from 10 mΩ to 35 mΩ. A 1700V includes a16 mΩ device. Package options include TO-247-3L, TO-247-4L, TOLL-8L and Q-DPAK, with several products incorporating Kelvin-source connections.
Para Light has divided the platform into two architectures. ThermaFlat I covers 650V and 1200V devices in industry-standard packages and is positioned for mainstream converter topologies. ThermaFlat II combines the low RDS(on) drift characteristic with a higher gate-threshold-voltage architecture intended to improve noise immunity and reduce false turn-on. According to Para Light, ThermaFlat II can operate without requiring a negative gate-off supply, potentially simplifying gate-driver circuitry, reducing component count and lowering system cost.
The company identifies AI data-center power supplies as one of the principal target markets. Other applications include battery backup units, UPS systems, EV charging stations, grid-connected energy-storage charging and discharging systems, photovoltaic inverters, variable-frequency drives and industrial automation. Para Light says it is continuing to expand the portfolio with additional voltage, current and package configurations.
Para Light is also positioning manufacturing and supply-chain capabilities as part of the offering. The company highlights wafer yields, dedicated in-house packaging and process controls, along with vertical integration covering device design, packaging and supply-chain management. It also cites strategic production planning and safety-inventory frameworks as measures intended to improve supply resilience for international customers.
Original – Para Light Electronics
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ROHM has launched the English-language version of its Engineer Social Hub, an online platform that provides engineers with easier access to the company’s technical information, application know-how, and product support. The platform brings together technical resources for ROHM’s semiconductor products and enables users to search for solutions, interact with ROHM engineers, and participate in technical discussions with other users.
Engineer Social Hub consolidates product-specific FAQs, technical discussions, documentation, videos, and an AI chatbot into a single online resource. Engineers can browse and search FAQs and discussion threads without registering. Registered users can post technical questions, participate in discussions, and receive direct responses from ROHM engineers.
The platform is designed to simplify access to technical support that previously required contacting ROHM or its distribution partners directly. By making product knowledge available online, ROHM aims to help engineers resolve technical issues more quickly and efficiently.
Engineer Social Hub covers a broad range of ROHM product categories, including:
- Analog ICs
- Power semiconductor devices
- Module products
- Resistors
- Other semiconductor components
In addition to manufacturer support, the platform includes community features that allow engineers to exchange ideas and technical knowledge with one another through discussion forums and topic-based communities. Gamification elements reward active participation by allowing users to earn points for contributing to discussions.
According to ROHM, the platform is intended to evolve into a collaborative engineering community where users and ROHM engineers can work together to solve technical challenges and share application expertise.
Key features include:
- Centralized access to ROHM technical documentation and application know-how
- Searchable product-specific FAQs
- Direct technical support from ROHM engineers through discussion forums
- AI chatbot for technical assistance
- Community discussions among engineers
- Technical documents and instructional videos
- Gamification features that reward user participation
The English-language Engineer Social Hub is available globally and forms part of ROHM’s broader effort to improve technical support and accelerate product development for engineers using its semiconductor solutions.
Original – ROHM
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Micro Commercial Components (MCC) has introduced the MIP50R12E1AML-BP and MIP75R12E2ML-BP, expanding its portfolio of 1200 V IGBT modules for high-power industrial applications. Available in industry-standard E1A and E2 packages, the new modules are designed to improve efficiency, thermal performance, and reliability in demanding power conversion systems.
The MIP Series is offered in 50 A and 75 A current ratings and incorporates low collector-emitter saturation voltage (VCE(sat)), integrated ultra-fast soft-recovery freewheeling diodes, and low-inductance package construction to reduce switching losses, improve efficiency, and enhance overall system performance.
The modules feature short-circuit withstand capability of up to 8 μs and support a maximum junction temperature of 175°C, enabling reliable operation under harsh electrical and thermal conditions. An integrated NTC thermistor provides accurate temperature monitoring for improved thermal management and system protection.
According to MCC, the modules are intended for a wide range of industrial applications, including motor drives, uninterruptible power supplies (UPS), welding equipment, servo drives, industrial inverters, renewable energy converters, and industrial power supplies.
Key features include:
- 1200 V collector-emitter voltage (VCE)
- 50 A (MIP50R12E1AML-BP) and 75 A (MIP75R12E2ML-BP) current ratings
- Typical VCE(sat) of 2.05 V and 1.9 V
- Integrated ultra-fast soft-recovery anti-parallel freewheeling diodes
- Low switching losses for improved conversion efficiency
- 8 μs short-circuit withstand capability
- Low-inductance package design
- Integrated NTC thermistor for temperature monitoring
- Maximum junction temperature of 175°C
- Industry-standard E1A and E2 module packages
- RoHS compliant
Original – Micro Commercial Components
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Littelfuse has recognized the technical contributions of Dr. Martin Schulz, Global Principal Application Engineer, for five consecutive years of peer-reviewed research presented at PCIM. His latest work introduces a direct liquid cooling concept for power semiconductor modules that removes the ceramic isolation layer traditionally used in module designs, enabling significant improvements in power density and thermal performance.
The technology was developed and validated in collaboration with Daimler Truck AG and the Steinbeis Institute. Instead of relying on a ceramic isolation layer, the new approach uses the coolant itself as the electrical isolation barrier. According to Littelfuse, the design enables a power module to deliver 800 A of continuous current from a chipset conventionally rated for 600 A while achieving junction-to-coolant thermal resistance below 0.08 K/W.
Testing based on a 700-kilometer Mercedes-Benz GenH2 Truck duty cycle demonstrated up to a 15% reduction in power losses and a projected power-cycling lifetime improvement of up to 800 times compared with conventional ceramic-isolated power modules operating under identical conditions.
Dr. Schulz’s research has consistently challenged established assumptions in power semiconductor design. Over the past five years, his PCIM papers have explored topics including the renewed use of thyristor and gate turn-off (GTO) technologies for megawatt-scale charging infrastructure, evaluating the appropriate use cases for silicon carbide, and, most recently, advanced cooling technologies for power modules.
In recognition of his sustained technical contributions, PCIM presented Dr. Schulz with a certificate of appreciation for five consecutive years of peer-reviewed research presentations.
According to Littelfuse, the direct liquid cooling concept demonstrates how innovative thermal management can improve power density, efficiency, and long-term reliability in high-power applications such as commercial electric vehicles and heavy-duty transportation.
Original – Littelfuse
