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Wolfspeed and LITEON Technology have formed a strategic partnership following the successful qualification of Wolfspeed’s silicon carbide technology for LITEON’s 800VDC power sidecar and compute-rack power supply unit platforms. The systems are being developed for next-generation AI data centers serving leading hyperscale customers, with potential adoption across additional cloud service provider platforms.
The collaboration represents another significant commercial entry point for SiC beyond its established automotive and industrial markets. Rapidly increasing AI compute power requirements are pushing data center operators toward 800VDC architectures, where higher distribution voltages can improve efficiency, increase power density and support the scaling of increasingly power-intensive AI racks.
LITEON will use Wolfspeed SiC MOSFETs within these architectures to improve power-conversion efficiency across a broad operating range. According to the companies, the technology can also reduce bill-of-material costs and simplify component procurement, making SiC attractive not only from an efficiency perspective but also at the overall system level.
A strategically important element of the partnership is Wolfspeed’s 200mm SiC manufacturing platform. LITEON plans to leverage this manufacturing capability as it develops power systems intended for hyperscale deployments, where semiconductor availability, manufacturing scale and supply-chain reliability become increasingly important as deployments move from qualification into volume production.
The qualification provides Wolfspeed with direct exposure to the emerging 800VDC AI data center power ecosystem. While no revenue, volume or deployment timetable was disclosed, successful qualification for LITEON’s power sidecar and compute-rack PSU platforms creates the potential for Wolfspeed devices to scale alongside future hyperscale and CSP deployments.
For LITEON, the partnership strengthens its ability to offer high-efficiency and high-reliability power infrastructure as AI data centers transition toward higher-voltage DC distribution. Wolfspeed CEO Robert Feurle highlighted the combination of advanced SiC technology and scalable supply capacity, while LITEON said the integration strengthens the performance, efficiency and reliability of its next-generation AI infrastructure platforms.
From a power semiconductor market perspective, the announcement is another indication that AI infrastructure is developing into an important incremental demand driver for SiC. Historically dominated by EV traction inverters, renewable energy and industrial applications, SiC is increasingly being positioned in high-power AI data center PSUs, BBUs and 800VDC distribution architectures. If hyperscale adoption accelerates, this could broaden the SiC demand base and create a meaningful new growth market for high-voltage SiC MOSFET suppliers such as Wolfspeed.
Original – Wolfspeed
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Power Integrations has announced a major extension of its PowiGaN gallium nitride technology to a 2200 V rating, which the company says exceeds the voltage capability of other commercially available GaN technologies. The development significantly expands the addressable voltage range for GaN and targets emerging high-voltage applications including AI data centers, electric vehicles, renewable energy, battery storage and HVDC infrastructure.
The 2200 V technology is particularly relevant as power architectures migrate toward higher DC bus voltages to improve efficiency and power density. Power Integrations highlighted next-generation AI data centers as a major opportunity, with industry roadmaps moving beyond today’s 800 VDC architectures toward potential 1500 V distribution systems. The additional voltage headroom provided by 2200 V GaN could enable designers to use GaN in applications where voltage requirements have historically favored silicon carbide.
Power Integrations is already extending GaN into these higher-voltage systems. Its 1700 V PowiGaN ICs are being designed into single-stage auxiliary power applications in data centers, while 1250 V devices provide an alternative to stacked lower-voltage switches in the main power path of 800 VDC architectures. The new 2200 V platform pushes this strategy further by providing sufficient voltage margin for future higher-voltage buses.
The development is strategically important for the competitive positioning of GaN versus SiC. GaN has traditionally delivered advantages in switching frequency and power density but has been constrained by lower commercially available voltage ratings. High-voltage applications have therefore remained an important stronghold for SiC. By extending GaN to 2200 V, Power Integrations is attempting to bring GaN’s high-frequency characteristics into applications previously considered beyond its practical voltage range.
The potential system-level impact could be significant. Higher-voltage GaN devices could reduce the need to series-connect multiple lower-voltage switches, simplifying power stages while reducing component count and potentially improving power density and reliability. Power Integrations specifically identifies solar inverters, HVDC systems, advanced industrial power conversion, EV systems and data center infrastructure as potential applications.
The announcement also highlights how AI infrastructure is accelerating technology competition between GaN and SiC. Yole Group analyst Roy Dagher noted that GaN’s historical voltage ceiling has limited its participation in the main power path of high-voltage data center architectures, leaving much of this opportunity to SiC. According to the figures cited in the announcement, Yole expects the power GaN device market to reach $3.5 billion by 2031.
Original – Power Integrations
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Para Light Electronics has launched its ThermaFlat I and ThermaFlat II silicon carbide MOSFET families, targeting a key thermal challenge in high-power conversion: the increase in MOSFET on-resistance as junction temperature rises. The portfolio targets AI and data-center power supplies, battery backup and UPS systems, EV charging, energy storage, photovoltaic inverters, variable-frequency drives and other industrial power applications.
The central feature of the new platform is what Para Light calls Ultra-Low RDS(on) Drift technology. Conventional SiC MOSFETs experience increasing on-resistance at elevated junction temperatures, which raises conduction losses and can increase cooling requirements. ThermaFlat is designed to keep on-resistance comparatively stable across a broad operating-temperature range, with the objective of improving full-load efficiency and simplifying thermal design.
In benchmark testing cited by Para Light, its 650V, 21 mΩ TO-247 device showed only approximately 8% RDS(on) variation as junction temperature increased from -25°C to +125°C. The company says this is significantly lower than the temperature coefficients of conventional SiC devices. Para Light also states that its 1200V ThermaFlat family exhibits similarly low temperature coefficients for high-power conversion architectures.
Broad portfolio spans 650V, 1200V and 1700V devices. The 650V lineup includes devices with RDS(on) ratings ranging from 8 mΩ to 36 mΩ, while the 1200V portfolio ranges from 10 mΩ to 35 mΩ. A 1700V includes a16 mΩ device. Package options include TO-247-3L, TO-247-4L, TOLL-8L and Q-DPAK, with several products incorporating Kelvin-source connections.
Para Light has divided the platform into two architectures. ThermaFlat I covers 650V and 1200V devices in industry-standard packages and is positioned for mainstream converter topologies. ThermaFlat II combines the low RDS(on) drift characteristic with a higher gate-threshold-voltage architecture intended to improve noise immunity and reduce false turn-on. According to Para Light, ThermaFlat II can operate without requiring a negative gate-off supply, potentially simplifying gate-driver circuitry, reducing component count and lowering system cost.
The company identifies AI data-center power supplies as one of the principal target markets. Other applications include battery backup units, UPS systems, EV charging stations, grid-connected energy-storage charging and discharging systems, photovoltaic inverters, variable-frequency drives and industrial automation. Para Light says it is continuing to expand the portfolio with additional voltage, current and package configurations.
Para Light is also positioning manufacturing and supply-chain capabilities as part of the offering. The company highlights wafer yields, dedicated in-house packaging and process controls, along with vertical integration covering device design, packaging and supply-chain management. It also cites strategic production planning and safety-inventory frameworks as measures intended to improve supply resilience for international customers.
Original – Para Light Electronics
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Navitas Semiconductor and Magnachip Semiconductor have announced a strategic partnership to accelerate the adoption of silicon carbide (SiC) technologies in high-voltage (HV) and ultra-high-voltage (UHV) power applications. Under the agreement, Magnachip will license Navitas’ GeneSiC™ Trench-Assisted Planar (TAP) technology to expand its power semiconductor portfolio into the SiC market.
The licensing agreement covers GeneSiC technologies with voltage ratings of 1200 V, 2300 V, 3300 V, and higher, enabling Magnachip to develop SiC devices for next-generation high-power conversion systems.
As part of the collaboration, Magnachip will also gain access to Navitas’ established SiC supply chain and materials ecosystem to support faster product development and market entry. The companies plan to transfer, qualify, and internalize the licensed technology at Magnachip’s manufacturing facility in South Korea while maintaining compatibility with Navitas’ existing technology platform.
The partnership targets a broad range of high-power applications, including:
- Energy transmission and grid infrastructure
- Battery energy storage systems (BESS)
- Industrial electrification
- Automotive power systems
- High-voltage power conversion
- Ultra-high-voltage power electronics
The companies stated that the agreement extends beyond the current SiC licensing arrangement, with additional areas of collaboration expected to be announced in the future.
For Navitas, the partnership expands the reach of its GeneSiC technology into the high-voltage power semiconductor market through licensing and technology collaboration. For Magnachip, the agreement provides a pathway into the rapidly growing SiC market, complementing its existing MOSFET and power semiconductor portfolio while enabling the development of higher-voltage, higher-efficiency power conversion solutions.
Original – Magnachip Semiconductor
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Micro Commercial Components (MCC) has expanded its silicon carbide portfolio with the introduction of the SICX0165G4JQ-TP, a 650 V, 1 A Silicon Carbide (SiC) Schottky Barrier Diode qualified to the AEC-Q101 automotive reliability standard. The device is designed for high-voltage automotive and industrial power conversion applications requiring high switching efficiency, compact size, and robust thermal performance.
The SICX0165G4JQ-TP combines a 650 V reverse voltage rating with a 1 A average forward current in a compact SMA package. Built using silicon carbide technology, the diode features zero reverse recovery current, eliminating reverse recovery losses to reduce switching losses and electromagnetic interference (EMI) while improving overall power conversion efficiency.
The device also offers a maximum forward voltage of 1.3 V to minimize conduction losses and an 18 A surge current capability to withstand inrush currents and transient overload conditions. Its positive temperature coefficient improves current sharing during parallel operation, while a maximum junction temperature of 175°C enables reliable operation in harsh environments with reduced cooling requirements.
The diode is targeted at a range of high-voltage power applications, including switching mode power supplies (SMPS), power factor correction (PFC) circuits, automotive auxiliary power supplies, EV charging systems, motor drives, and solar inverters.
Key specifications include a 650 V reverse voltage rating, 1 A average forward current, AEC-Q101 qualification, zero reverse recovery current, 1.3 V maximum forward voltage, 18 A surge current capability, 175°C maximum junction temperature, positive temperature coefficient, SMA package, and RoHS compliance.
Original – Micro Commercial Components
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Efficient Power Conversion (EPC) will showcase its latest Gen7 gallium nitride (GaN) power technology at PCIM Asia 2026 in Shenzhen, highlighting new devices and reference designs for AI data centers, humanoid robots, drones, motor drives, and high-density DC-DC power conversion. The company will also present live technical sessions covering emerging GaN applications and future power architectures.
EPC’s seventh-generation eGaN® FETs are designed to deliver:
- Ultra-low on-resistance (RDS(on))
- Reduced switching losses
- High-frequency operation
- Improved thermal performance
- Higher power density
- Simplified system integration
The new devices target applications requiring compact, high-performance power conversion, particularly AI infrastructure and intelligent motion systems.
A key focus of EPC’s exhibition will be integrated GaN motor-drive ICs for robotics and electric propulsion.
Featured products include:
- EPC33110 three-phase integrated ePower Stage IC for humanoid robot joints and drone propulsion
- EPC23108/09 integrated ePower Stage ICs supporting up to 100 V and 35 A
- EPC23110/11 integrated ePower Stage ICs supporting up to 100 V and 20 A
The devices are now in mass production and are designed to accelerate deployment of intelligent motion control systems.
EPC will also present several new Gen7 discrete GaN transistors, including:
Device Voltage RDS(on) EPC2366 40 V 0.84 mΩ EPC2379 18 V 0.28 mΩ EPC2370 18 V 0.28 mΩ EPC2378 25 V 0.41 mΩ EPC2377 40 V 0.50 mΩ EPC2375 100 V 0.90 mΩ EPC2376 150 V 1.50 mΩ The devices target:
- AI power supplies
- High-density DC-DC converters
- Robotics
- Advanced motor drives
- High-current synchronous rectification
EPC will demonstrate GaN-based power conversion across the AI server power chain, including:
- EPC91123 – 6 kW isolated 800 V-to-12.5 V ISOP LLC converter
- EPC91134 – 11 kW isolated 400/800 V-to-50 V converter
- A new 800 V-to-6 V, 6 kW ISOP converter making its debut at the exhibition
The company will also showcase point-of-load (PoL) power architectures that efficiently convert 48 V and 12 V intermediate bus voltages to sub-1 V processor supply rails required by next-generation AI accelerators.
Visitors will see GaN-based reference designs powering:
- Humanoid robotic arms
- Drone propulsion systems
- Three-phase motor drives
- High-current inverter platforms
Featured reference designs include:
- EPC91122
- EPC91132
- EPC91121
- EPC91135
- EPC9186HCx
- EPC91128/29/30/31
These demonstrations highlight the advantages of GaN in applications requiring fast transient response, lightweight designs, and high power density.
During PCIM Asia 2026, EPC experts will present a series of technical sessions covering:
- The future evolution of GaN technology
- Scalable motor-control architectures for humanoid robots and drones
- New GaN products for high-density DC-DC converters
- Emerging AI power delivery architectures
Original – Efficient Power Conversion
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WeEn Semiconductors has introduced a new family of silicon carbide (SiC) power modules designed for solid-state transformers (SSTs), EV ultra-fast chargers, smart grids, and renewable energy systems. The portfolio includes more than 20 AC-DC and DC-DC power modules with voltage ratings from 1200 V to 2300 V, targeting the growing demand for high-efficiency, medium-voltage power conversion.
Solid-state transformers are gaining momentum as an enabling technology for AI data centers, grid modernization, and electrification, offering conversion efficiencies of approximately 98% while reducing system size and improving power management.
WeEn’s new SiC modules support a broad range of SST topologies, including power conversion from 35 kVAC medium-voltage AC directly to 800 VDC for applications such as AI server power infrastructure.
The new product family includes devices optimized for multiple converter architectures:
- 3-level topology modules for improved electromagnetic interference (EMI) performance
- 2-level topology modules for simplified control and reduced system footprint
- Half-bridge modules for LLC and Dual Active Bridge (DAB) converter stages
- Modules for both primary and secondary power conversion
Package options include:
- B2
- B3
- 62 mm screw-mount
- High-power PCB-mount configurations
The portfolio covers a wide operating range with:
- 1200 V
- 1500 V
- 1700 V
- 2300 V
Devices offer RDS(on) values as low as 1.5 mΩ, enabling lower conduction losses and improved overall system efficiency.
The modules feature:
- Low-inductance package design
- Simplified PCB layout
- Space for gate-driver integration
- Enhanced electrical isolation
- Flexible pin configurations
WeEn also offers customization options, including variations in:
- Direct bonded copper (DBC) substrates
- Module case materials
- Silicone gel encapsulation
- Mounting configurations
- Pin types
- Surface plating
- Pre-applied thermal interface materials
The new SiC module family is intended for a wide range of high-voltage power systems, including:
- Solid-state transformers (SSTs)
- AI data center power infrastructure
- Smart grids
- Renewable energy systems
- EV ultra-fast charging stations
- Medium-voltage power conversion
- Industrial power supplies
The initial portfolio includes more than 20 modules, including:
Device Breakdown Voltage RDS(on) Application INPC modules include WMSC5R0N17B3T 1700 V 5.0 mΩ Multi-purpose half-bridge B3 modules include WMSC5R0HS23B3T 2300 V AC side WMSC5R0F23B3T 2300 V AC side, LLC/DAB Primary WMSC3R0F15B3T 1500 V LLC/DAB Primary WMSC3R0F12B3T 1200 V LLC/DAB Secondary WMSC2R4F12B3T 1200 V LLC/DAB Secondary Half-bridge B2 Modules include WMSC4R0H23B2N 2300 V 4.0 mΩ LLC/DAB Secondary WMSC4R8H23B2N-D 2300 V 4.8 mΩ LLC/DAB Secondary WMSC6R0H12B2N-D 2300 V 6.0 mΩ LLC/DAB Secondary Half-bridge 62 mm module (screw mount) include WMSC2R7H23T2 2300 V 2.7 mΩ AC side WMSC2R7H17T2N-D 1700 V 2.7 mΩ LLC/DAB Primary WMSC7R5H17T2N-D 1700 V 7.5 mΩ LLC/DAB Secondary WMSC1R9H12T2 1200 V 1.9 mΩ LLC/DAB Secondary WMSC1R9H12T2N 1200 V 1.9 mΩ LLC/DAB Secondary High-power half-bridge modules (PCB mount) include WMSC1R5H12B3S 1200 V 1.5 mΩ LLC/DAB Secondary WMSC2R3H12B3S 1200 V 2.3 mΩ LLC/DAB Secondary WMSC4R0H12B2S 1200 V 4.0 mΩ LLC/DAB Secondary WMSC4R0H12B2S-D 1200 V 4.0 mΩ LLC/DAB Secondary WMSC4R0H12B2T-D 1200 V 4.0 mΩ LLC/DAB Secondary The new SiC power modules are available for sampling and volume production. With support for voltages up to 2300 V, multiple converter topologies, and customizable configurations, the portfolio is designed to address a broad range of medium-voltage power conversion applications as adoption of solid-state transformers and high-efficiency DC infrastructure continues to expand.
Original – WeEn Semiconductors
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Micro Commercial Components (MCC) has expanded its silicon carbide portfolio with the SIC1065G5M-BP, a 650 V, 10 A silicon carbide (SiC) Schottky Barrier Diode (SBD) designed for high-efficiency power conversion applications. Utilizing advanced Merged PiN Schottky (MPS) technology, the device combines zero reverse recovery, low forward voltage, and high-temperature operation to reduce switching losses and improve system efficiency in industrial and energy applications.
As switching frequencies continue to increase in modern power converters, conventional silicon rectifiers become a significant source of switching losses. The SIC1065G5M-BP addresses this challenge by eliminating reverse recovery current, enabling cleaner, more efficient operation in high-frequency power conversion systems.
The device is particularly well suited for applications where efficiency, thermal performance, and reliability are critical.
The diode is built using Merged PiN Schottky (MPS) technology, combining the low-loss characteristics of a Schottky diode with improved surge current capability.
Key electrical features include:
- 650 V reverse voltage rating
- 10 A average forward current
- Maximum forward voltage of 1.7 V
- Zero reverse recovery current
- 60 A non-repetitive surge current capability
The absence of reverse recovery charge significantly reduces switching losses, making the device suitable for high-frequency converter topologies.
The SIC1065G5M-BP supports junction temperatures of up to 175°C, enabling reliable operation in thermally demanding environments while simplifying cooling system design.
Packaged in the industry-standard TO-220AC package, the device provides straightforward heatsink attachment and effective thermal management for higher-power applications.
The new SiC Schottky Barrier Diode is designed for a range of high-efficiency power conversion systems, including:
- Solar inverters
- Power factor correction (PFC) circuits
- Motor drives
- EV charging infrastructure
- Industrial power supplies
Original – Micro Commercial Components
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Infineon Technologies has partnered with ADVANTICS to supply its 1200 V CoolSiC™ MOSFETs and dual-channel EiceDRIVER™ 2EDB9259Y gate drivers for a new generation of liquid-cooled silicon carbide power converters. The collaboration targets high-power applications including megawatt charging systems (MCS) for heavy-duty electric vehicles and marine vessels, as well as battery energy storage systems (BESS), DC microgrids, and AI data center power infrastructure.
The growing electrification of heavy-duty transport requires charging infrastructure capable of delivering significantly higher power levels than conventional fast chargers. Megawatt Charging Systems (MCS) enable substantially shorter charging times for commercial trucks, mining equipment, and marine vessels, helping reduce operational downtime and accelerate the transition toward zero-emission transportation.
Infineon’s silicon carbide power semiconductors provide the efficiency and power density needed to support these next-generation charging platforms.
ADVANTICS’ new converter platform is built around 100 kW liquid-cooled power modules, allowing systems to be scaled into the megawatt range.
Key platform features include:
- Modular 100 kW building blocks
- Scalable to megawatt-class systems
- Bidirectional power conversion
- Wide operating voltage up to 1500 V
- Peak efficiency of up to 98.5%
- Liquid-cooled thermal management
The architecture supports seamless integration with electrical grids, battery storage systems, and high-power EV charging infrastructure.
The platform utilizes:
- Infineon CoolSiC™ 1200 V MOSFETs
- EiceDRIVER™ 2EDB9259Y dual-channel gate drivers
Together, these devices enable:
- Higher conversion efficiency
- Increased power density
- Reduced system losses
- Improved reliability
- More compact converter designs
Silicon carbide technology also enables higher switching frequencies, reducing passive component size while improving overall system performance.
The jointly developed platform addresses a wide range of high-power applications, including:
- Megawatt Charging Systems (MCS)
- Heavy-duty electric trucks
- Electric marine vessels
- Battery energy storage systems (BESS)
- DC microgrids
- AI data center power infrastructure
- Grid-connected industrial power systems
By combining Infineon’s wide-bandgap semiconductor portfolio with ADVANTICS’ expertise in high-power converter design, the collaboration aims to accelerate deployment of efficient, scalable power conversion systems for sectors that have traditionally been difficult to electrify.
The partnership reflects the increasing adoption of silicon carbide technology in megawatt-scale power electronics, where high efficiency, high power density, and reliable operation are essential for next-generation charging infrastructure and energy systems.
Original – Infineon Technologies
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Infineon Technologies announced that the U.S. International Trade Commission’s (ITC) Final Determination, issued on May 7, 2026, has become final following the expiration of the Presidential Review Period. The decision confirms that Innoscience infringed an Infineon gallium nitride (GaN) patent and upholds the associated exclusion and cease-and-desist orders, resulting in import and sales restrictions on the infringing products in the United States.
With the conclusion of the Presidential Review Period, the ITC’s ruling is now fully enforceable. The decision confirms infringement of an Infineon GaN patent by Innoscience and prohibits the importation and sale of the affected products in the U.S. market.
Infineon stated that the outcome reinforces the strength of its intellectual property portfolio and its commitment to protecting innovation and promoting fair competition in the GaN semiconductor industry.
The U.S. ruling follows a series of legal victories for Infineon in Germany involving its GaN patent portfolio.
These German decisions prohibit the import, sale, and marketing of specified patent-infringing Innoscience products in Germany while also awarding damages to Infineon.
Infineon emphasized the growing importance of gallium nitride technology across next-generation power electronics applications, including:
- AI data center power infrastructure
- Renewable energy systems
- Industrial automation
- Electric vehicles
GaN devices offer higher switching speeds, greater power density, lower switching losses, and more compact system designs than conventional silicon technologies, enabling improved energy efficiency and reduced thermal management requirements.
The company also noted that its GaN intellectual property portfolio comprises approximately 450 patent families, supported by its 300 mm GaN manufacturing platform, which it views as a key differentiator for scaling next-generation power semiconductor production.
Original – Infineon Technologies
