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Renesas Electronics Corporation has launched the TP65B110HRU, the industry’s first bidirectional GaN switch based on depletion-mode (d-mode) technology, enabling both positive and negative current blocking in a single device.
The new 650V SuperGaN® device is designed to simplify power conversion architectures in applications such as solar microinverters, AI data centers, and onboard EV chargers. By replacing traditional back-to-back FET configurations, the device allows true single-stage power conversion, reducing component count, system complexity, and losses.
Conventional silicon and SiC switches are unidirectional, requiring multi-stage topologies or back-to-back configurations that increase switch count and reduce efficiency. In contrast, Renesas’ bidirectional GaN device integrates this functionality into a single component. For example, a solar microinverter can reduce its switch count by half and eliminate DC-link capacitors, while achieving efficiencies above 97.5%.
The device combines a high-voltage GaN structure with co-packaged low-voltage silicon MOSFETs, enabling compatibility with standard gate drivers without requiring negative gate bias. This simplifies gate drive design while maintaining robust switching performance in both hard- and soft-switching topologies. With dv/dt immunity exceeding 100 V/ns and low on-resistance of 110 mΩ, the device supports high-frequency, high-density designs.
From a technology perspective, this marks a significant step toward system-level simplification in power electronics. Bidirectional GaN enables new converter topologies, particularly in high-growth segments like AI power infrastructure and distributed energy systems, where efficiency, density, and BOM reduction are critical.
Renesas is positioning the device within its broader system solution strategy, offering evaluation kits and “Winning Combinations” that integrate controllers, drivers, and power devices to accelerate time-to-market and reduce design risk.
Original – Renesas Electronics
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ROHM Co., Ltd. announced new three-phase inverter reference designs alongside its participation at APEC 2026, reinforcing its strategy to accelerate adoption of SiC and GaN power technologies across automotive, industrial, and AI infrastructure applications.
ROHM released three reference designs—REF68005, REF68006, and REF68004—supporting three-phase inverter circuits based on its EcoSiC™ molded modules, including HSDIP20, DOT-247, and TRCDRIVE pack™. These designs target power levels up to 300 kW and are intended to reduce engineering effort in evaluation, gate driving, and thermal design, which are key barriers to broader SiC adoption. By providing ready-to-use design data, ROHM enables faster system development and easier integration of SiC modules into high-power applications such as traction inverters and industrial drives.
Complementing this, ROHM is showcasing its latest power solutions at APEC 2026 in San Antonio, highlighting advancements in both SiC and GaN technologies. The company is focusing on key growth segments including AI data centers, electric vehicles, and industrial power systems.
For AI infrastructure, ROHM is demonstrating EcoSiC™ modules in HSDIP20 and DOT-247 packages for server power supplies, as well as 650V EcoGaN™ HEMTs integrated into power solutions for high-efficiency data center applications. A joint demonstration with Tamura Corporation features gate driver modules optimized for ROHM’s SiC devices, targeting UPS systems, PV inverters, and energy storage.
In automotive applications, ROHM is emphasizing its TRCDRIVE pack™ for traction inverters, along with compact SiC modules for onboard chargers and auxiliary systems, addressing increasing demand for higher efficiency and power density in electrified powertrains.
The company is also presenting system-level demonstrations, including a three-phase BLDC motor drive platform and LogiCoA™ hybrid analog-digital power solutions, illustrating its broader push toward integrated system solutions beyond discrete devices.
From a market perspective, the combination of reference designs and live system demonstrations highlights a key industry trend: moving from component-level innovation to system-level enablement. By lowering design complexity and accelerating time-to-market, ROHM is positioning itself to capture growth in high-power applications driven by electrification and AI infrastructure.
Original – ROHM
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Microchip Technology announced its new BZPACK mSiC® power modules, designed to meet stringent high humidity, high voltage, high temperature reverse bias (HV-H3TRB) standards for demanding power conversion environments.
The BZPACK modules are available in multiple configurations, including half-bridge, full-bridge, three-phase and PIM/CIB topologies, providing flexibility for designers to optimize system performance, cost and architecture across industrial and renewable energy applications.
The modules are tested to exceed the 1,000-hour HV-H3TRB standard, ensuring robust long-term reliability in harsh environments. With a Comparative Tracking Index of 600 V, stable RDS(on) across temperature ranges and substrate options such as aluminum oxide and aluminum nitride, the devices offer strong insulation, effective thermal management and durability.
To simplify manufacturing and integration, the BZPACK modules feature a compact, baseplate-less design with press-fit, solderless terminals and optional pre-applied thermal interface material. These features help reduce assembly complexity, improve manufacturing consistency and enable easier multi-sourcing through industry-standard footprints. The modules are also pin-compatible to support design flexibility.
The portfolio is supported by Microchip’s MB and MC families of mSiC MOSFETs, which are available for industrial and automotive applications, including AEC-Q101 qualified options. These devices support standard gate-source voltages of 15 V or higher and are offered in common industry packages such as TO-247-4.
The MC family additionally integrates a gate resistor, improving switching control and stability in multi-die module configurations while maintaining low switching energy. The modules are designed to reduce the risk of field failures associated with moisture-induced leakage or breakdown, supporting reliable operation in high-stress environments.
Original – Microchip Technology
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Infineon Technologies announced two new high-voltage intermediate bus converter (HV IBC) reference designs aimed at accelerating the adoption of next-generation AI server power architectures based on ±400 V and 800 V DC distribution.
The new designs are enabled by Infineon’s 650 V CoolGaN™ switches and target hyperscalers, power architects and server OEMs seeking higher rack power, reduced distribution losses and improved thermal performance in AI data centers.
The first reference design converts 800 V DC or ±400 V to 50 V and serves as an intermediate stage for downstream 48 V IBC modules. The second design enables direct conversion from 800 V DC to 12 V, supporting compact server board implementations. For flexible system configurations, the designs can be paired with Infineon’s XDPP1188-200C digital controller, which supports output voltages of 48 V, 24 V or 12 V.
The 800 V to 50 V design achieves more than 98 percent efficiency at full load and is built using CoolGaN switches, EiceDRIVER gate drivers and a PSOC microcontroller. It consists of two 3 kW converter blocks arranged in an input-series-output-parallel configuration, scaling to 6 kW total design power and supporting peak loads up to 10.8 kW. The system uses a planar PCB-integrated transformer and soft-switching operation to reduce electromagnetic interference, achieving a compact 60 × 60 × 11 mm form factor and a power density of 2.5 kW/in³.
The second design converts 800 V DC directly to 12 V using an ISOP half-bridge LLC topology and a matrix transformer. It delivers 6 kW total design power and supports peak loads up to 10.8 kW, achieving a height of just 8 mm within a 130 × 40 mm footprint. The design reaches up to 98.2 percent peak efficiency and 97.1 percent efficiency at full load, with a power density exceeding 2300 W/in³. It combines 650 V CoolGaN and 40 V OptiMOS™ 7 switches along with EiceDRIVER gate drivers and a PSOC microcontroller.
The reference designs are part of Infineon’s broader AI power portfolio, covering the full power delivery chain from grid to core, including solid-state transformers, circuit protection, high-voltage conversion and point-of-load power modules. By leveraging silicon, silicon carbide and gallium nitride technologies, Infineon aims to provide scalable, high-efficiency solutions for next-generation AI server platforms.
Original – Infineon Technologies
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Texas Instruments introduced a complete 800 V DC power architecture for next-generation AI data centers, developed in alignment with NVIDIA’s 800 V DC reference design. The solution was showcased at NVIDIA GTC 2026 and demonstrates how TI’s analog and embedded processing technologies support high-voltage AI infrastructure.
The architecture is designed to maximize efficiency and power density across the entire power delivery path, addressing the growing power demands driven by AI workloads. By simplifying the conversion chain, the solution enables more scalable and reliable data center operations.
A key feature of TI’s approach is a streamlined two-stage power conversion from 800 V directly to GPU core voltages. The first stage uses an 800 V to 6 V isolated bus converter, followed by a 6 V to sub-1 V multiphase buck converter for high-current GPU power delivery. This architecture reduces conversion losses, improves efficiency and supports higher power density compared to traditional multi-stage designs.
The full solution includes several reference designs. An 800 V hot-swap controller provides scalable input power protection for high-voltage rails. The 800 V to 6 V DC-DC converter integrates GaN power stages and achieves up to 97.6 percent peak efficiency with power density exceeding 2000 W/in³. The 6 V to sub-1 V multiphase buck converter delivers high current density for advanced GPU cores and offers improved performance compared to 12 V-based architectures.
TI also presented additional system-level components, including a 30 kW 800 V high-power-density AC-DC power supply for AI servers and 800 V capacitor bank units using supercapacitor technology for energy storage and transient support. An 800 V to 12 V DC-DC converter was also demonstrated for compute tray applications.
The solution targets the transition toward 800 V DC data center architectures, which are increasingly required to support megawatt-scale racks and high-density AI compute platforms. By leveraging high-voltage distribution and advanced semiconductor technologies, TI aims to enable more efficient, compact and scalable power systems for future AI infrastructure.
Original – Texas Instruments
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Navitas Semiconductor announced a new DC-DC power delivery board (PDB) based on GaNFast™ technology that enables direct conversion from 800 V to 6 V in a single stage, eliminating the need for a traditional 48 V intermediate bus converter.
The new architecture is designed to support next-generation AI data center platforms, particularly those aligned with NVIDIA infrastructure, where increasing rack power densities demand more efficient and compact power delivery solutions.
By removing the intermediate 48 V conversion stage, the system reduces power losses, improves reliability and frees up valuable board space for compute and memory components. This direct 800 V-to-6 V conversion also improves overall system efficiency and simplifies the power delivery chain for high-performance AI workloads.
The power delivery board is designed to achieve up to 96.5 percent peak efficiency at full load while operating at a switching frequency of 1 MHz. It delivers a power density of approximately 2,100 W/in³ and features an ultra-low profile, enabling close integration with GPU boards to enhance transient performance and power distribution efficiency.
The design uses 16 650 V GaNFast FETs in a dual-cooled DFN8×8 package on the primary side, configured in a stacked full-bridge topology. On the secondary side, center-tapped outputs utilize 25 V silicon MOSFETs. The high switching frequency allows the use of smaller passive components and planar magnetics, contributing to higher power density and compact system design.
The platform aligns with the industry transition toward 800 V DC data center architectures, driven by the increasing power demands of AI and accelerated computing. By enabling direct conversion to low-voltage rails such as 6 V or 12 V, the solution reduces conversion stages and improves end-to-end efficiency compared to conventional architectures.
Navitas stated that this development builds on its earlier 800 V-to-50 V platform and represents a further step toward simplified, high-efficiency power delivery systems for AI infrastructure.
Original – Navitas Semiconductor
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ROHM announced the start of online sales for new silicon carbide molded modules, including the TRCDRIVE pack™, HSDIP20 and DOT-247 series. The new modules are designed to promote wider adoption of high-efficiency SiC-based power conversion technologies as global demand for energy-efficient power systems continues to grow.
The products are available for online purchase through distributors such as DigiKey and Farnell.
The TRCDRIVE pack™ is a 2-in-1 SiC molded module designed for traction inverters in electric vehicles with power levels up to 300 kW. It integrates ROHM’s fourth-generation SiC MOSFETs with low on-resistance, enabling approximately 1.5× higher power density compared with conventional SiC molded modules. The module also features a terminal layout that allows the gate driver board to be connected from the top, simplifying assembly and reducing installation time. Example applications include xEV traction inverters.
The HSDIP20 module is available in 4-in-1 and 6-in-1 configurations and targets applications such as xEV onboard chargers, EV charging stations, server power supplies and AC servo systems. The lineup includes six models rated at 750 V and seven models rated at 1200 V. The modules integrate the essential power conversion circuits into a compact package, reducing design complexity and enabling smaller power conversion systems.
The DOT-247 module is a 2-in-1 SiC module designed primarily for industrial applications such as photovoltaic inverters and uninterruptible power supply systems. It retains the versatility of the widely used TO-247 package while delivering higher power density. The module supports both half-bridge and common-source circuit configurations and helps reduce component count and PCB area in power conversion circuits.
Applications for the new SiC modules include electric vehicle systems such as onboard chargers, DC-DC converters and electric compressors, as well as industrial equipment including EV charging stations, V2X systems, PV inverters, power conditioners and AI data center power systems.
Original – ROHM
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Navitas Semiconductor announced two new package options for its 5th generation GeneSiC silicon carbide MOSFET platform, introducing a top-side cooled QDPAK package and a low-profile TO-247-4L package with asymmetrical leads. The new devices target applications requiring high power density and improved thermal performance, including AI data centers and energy infrastructure systems.
The devices are based on the company’s fifth-generation trench-assisted planar silicon carbide MOSFET technology. This architecture delivers a 35% improvement in the RDS(on) multiplied by gate-drain charge figure of merit and approximately a 25% improvement in the gate-drain to gate-source charge ratio. Combined with a stable gate threshold voltage greater than 3 V, the design helps prevent parasitic turn-on and enables predictable switching behavior in high-power systems.
The new QDPAK package features a top-side cooling structure designed to address thermal limitations of traditional PCB-based cooling approaches. Heat is transferred directly through the top of the package to a heatsink, improving thermal efficiency and enabling smaller system footprints. The package also reduces parasitic inductance, supporting cleaner switching at high frequencies. It provides a compact footprint of approximately 15 mm by 21 mm with a height of 2.3 mm and includes design features that extend creepage distance while supporting applications up to 1000 VRMS.
Navitas also introduced a low-profile TO-247-4L through-hole package designed for systems where vertical space is constrained. By reducing the height of the package on the PCB, the design enables higher power density compared with conventional TO-247-4 packages. The device also incorporates asymmetrical leads, including thinner leads for the gate and Kelvin-source connections, to improve manufacturing tolerances during PCB assembly.
The new packaging options are intended for applications such as AI data center power supplies and high-performance power conversion systems where compact form factors and efficient thermal management are essential.
The initial products include four 1200 V SiC MOSFETs with on-resistance values of 6.5 mΩ and 12 mΩ, offered in both QDPAK and TO-247-4L packages. Samples are available for customer evaluation.
Original – Navitas Semiconductor
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SK keyfoundry announced the development of a silicon carbide planar MOSFET process platform and revealed that it has secured its first order for a 1200 V SiC MOSFET product, marking the company’s entry into the silicon carbide compound semiconductor foundry market.
The newly developed platform supports a voltage range from 450 V to 2300 V and is designed to deliver high reliability and stability in high-voltage operating environments. According to the company, process optimization and tighter control of key manufacturing steps have enabled yields exceeding 90% while improving overall productivity.
SK keyfoundry also highlighted a customized process support service that allows device designers to fine-tune electrical characteristics and specifications according to their application requirements.
Following completion of the process platform, the company secured an order from a customer specializing in SiC device design for the development of a 1200 V MOSFET product. The device will be used in industrial equipment applications where thermal efficiency management is critical. After prototype evaluation and reliability testing, mass production is expected to begin in the first half of 2027.
The development represents the first major outcome following SK keyfoundry’s acquisition of SK powertech, which specializes in SiC technology. The integration of capabilities from both companies enabled the creation of the new platform.
SK keyfoundry stated that securing a commercial customer order immediately after completing the technology development demonstrates the maturity and competitiveness of the platform and signals readiness for commercialization in the growing compound semiconductor market. CEO Derek D. Lee said the company plans to expand its high-voltage power semiconductor offerings to meet increasing demand from global customers.
Original – SK keyfoundry
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Wolfspeed announced that its 300 mm silicon carbide technology platform could become a key materials foundation for advanced heterogeneous packaging used in AI and high-performance computing systems by the end of the decade.
The initiative builds on the company’s January 2026 milestone of producing a single-crystal 300 mm SiC wafer. Wolfspeed is now working with partners across the AI ecosystem to evaluate how large-diameter silicon carbide substrates could help address emerging performance limitations in next-generation semiconductor packaging.
As AI workloads increase, semiconductor packages are growing in size, power density, and integration complexity. These trends are pushing conventional materials used in advanced packaging toward their thermal, mechanical, and electrical limits. Wolfspeed believes silicon carbide can help address these challenges because of its high thermal conductivity, mechanical robustness, and favorable electrical characteristics.
Using a 300 mm SiC wafer format also aligns with the existing semiconductor manufacturing infrastructure used for advanced silicon devices. This compatibility allows potential integration with current wafer-level packaging processes and fabrication tools while supporting scalable high-volume manufacturing.
The company is collaborating with foundries, outsourced semiconductor assembly and test providers, system architects, and research institutions to study the feasibility of silicon carbide interposers and related packaging components. The program aims to evaluate performance benefits, reliability, and integration pathways for hybrid silicon–silicon carbide packaging architectures.
According to Wolfspeed, the larger 300 mm wafer format could enable fabrication of larger interposers and heat spreaders required for increasingly large and complex semiconductor packages used in AI and HPC systems. The approach is intended to support the industry’s transition toward higher integration levels while maintaining manufacturability and ecosystem compatibility.
Original – Wolfspeed
