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SemiQ Inc has broadened its third-generation QSiC™ MOSFET portfolio with seven new power modules that deliver industry-leading current density and thermal performance. The launch adds high-current S3 half-bridge, B2T1 six-pack and B3 full-bridge options engineered to raise system efficiency, simplify cooling, and cut switching losses in next-generation EV chargers, energy storage systems and industrial motor drives.
The expanded lineup targets the rising demand for ultra-efficient power conversion. In the standard 62 mm S3 half-bridge format, current capability reaches up to 608 A with junction-to-case thermal resistance as low as 0.07°C/W. The B2T1 six-pack modules integrate a complete three-phase power stage in a compact housing with RDS(on) values from 19.5 to 82 mΩ to streamline layout and minimize parasitics in motor drives and advanced AC-DC converters. The B3 full-bridge devices offer up to 120 A with on-resistance down to 8.6 mΩ and thermal resistance of 0.28°C/W, maximizing power density and efficiency for single-phase inverters and high-voltage DC-DC applications.
Quality and reliability measures include wafer-level gate-oxide burn-in to assure gate integrity and breakdown voltage testing beyond 1350 V. Built on SemiQ’s Gen3 SiC technology, the new modules operate at 18 V/-4.5 V gate drive and reduce both RONsp and turn-off energy (EOFF) by up to 30% versus prior generations.
Commenting on the release, Dr. Timothy Han said that EV infrastructure and new industrial applications demand ever-higher performance, and that the Gen3 full-bridge, half-bridge and six-pack modules—with higher current density and significantly lower on-resistance—are designed to meet those requirements.
Product list:
GCMX020A120B2T1P — Six-Pack, B2, 1200 V, 30 A, 19.5 mΩ
GCMX040A120B2T1P — Six-Pack, B2, 1200 V, 30 A, 39 mΩ
GCMX080A120B2T1P — Six-Pack, B2, 1200 V, 29 A, 82 mΩ
GCMX008B120B3H1P — Full-Bridge, B3, 1200 V, 120 A, 8.6 mΩ
GCMX016B120B3H1P — Full-Bridge, B3, 1200 V, 95 A, 16.6 mΩ
GCMX2P3B120S3B1-N — Half-Bridge, S3, 1200 V, 608 A, 2.4 mΩ
GCMX3P5B120S3B1-N — Half-Bridge, S3, 1200 V, 428 A, 3.6 mΩKey benefits:
• Higher power density through industry-leading current ratings and low RDS(on)
• Lower thermal resistance to ease cooling and reduce system size and cost
• Integrated topologies (six-pack, full-bridge, half-bridge) to simplify layout and minimize parasitics
• Up to 30% reduction in RONsp and EOFF compared to previous generations
• Robust screening, including wafer-level gate-oxide burn-in and >1350 V breakdown verificationAvailability details, reference designs and application notes can be aligned to specific EV charging, ESS and industrial drive requirements.
Original – SemiQ
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onsemi has introduced its EliteSiC MOSFETs in the industry-standard T2PAK top-cool package, offering improved thermal performance and design flexibility for high-power, high-voltage applications. Targeting sectors such as electric vehicles (EVs), solar energy infrastructure, and energy storage systems, the new solution addresses the growing demand for efficiency and compactness in power electronics.
The newly released 650V and 950V EliteSiC MOSFETs combine onsemi’s advanced silicon carbide technology with the thermally optimized T2PAK top-cool package, providing designers with a powerful tool for tackling thermal challenges in automotive and industrial systems. Initial devices are already shipping to lead customers, with additional variants scheduled for release beginning in Q4 2025.
The EliteSiC T2PAK package enables direct thermal transfer from the MOSFET to the system heatsink, bypassing limitations of PCB-based cooling. This configuration supports superior heat dissipation and lower junction temperatures, resulting in:
- Reduced thermal resistance and improved thermal efficiency
- Lower component stress and extended system reliability
- Higher power density in smaller footprints
- Simplified thermal design for faster product development cycles
Technical Highlights of the T2PAK Top-Cool Package:
- Supports RDS(on) values ranging from 12 mΩ to 60 mΩ
- Minimizes stray inductance for improved switching speeds and reduced energy losses
- Combines thermal and switching performance advantages of TO-247 and D2PAK formats
- Offers direct die-to-heatsink contact, eliminating PCB thermal bottlenecks
This packaging innovation allows engineers to design more compact and thermally optimized systems, helping to meet the efficiency requirements of modern power applications in EV powertrains, solar inverters, industrial drives, and high-performance chargers.
With the integration of EliteSiC technology and the top-cool T2PAK format, onsemi continues to expand its capabilities in delivering advanced silicon carbide solutions for next-generation power electronics.
Original – onsemi
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X-FAB is streamlining the development of advanced silicon carbide (SiC) power devices through its latest XbloX platform. This modular, scalable platform enables SiC device designers to transition from prototyping to full-scale production significantly faster—achieving production ramp-up up to nine months ahead of traditional development methods.
The third generation of the XbloX platform (XSICM03) introduces advanced capabilities tailored for high-performance planar SiC MOSFETs. It reduces cell pitch and improves on-state resistance, which enables up to 30% more dies per wafer and supports compact, efficient power device designs. The platform is optimized for high-growth sectors such as automotive, industrial automation, energy, and datacenter infrastructure, where next-generation SiC MOSFETs are in high demand.
XbloX provides two key benefits for device developers: first, X-FAB takes ownership of core process development activities by offering a Process Installation Kit (PIK) that contains pre-qualified process modules and implant recipes. Second, the standardized and modular configuration of the platform transforms wafer manufacturing into a scalable process, moving beyond the limitations of customer-specific production models.
The result is a dramatic reduction in development time, risk, and engineering resources. Customers benefit from an accelerated onboarding process—up to six times faster than conventional methods—and a guided approach that simplifies design, mask tooling, and process selection. Once process blocks are selected, XbloX automatically generates an integrated process flow that incorporates quality controls, business systems, and commercial terms.
“Thanks to a PIK, qualified SiC process development modules, and an automated onboarding process, customers need do little more than access our global hotline for support on block selection and deployment,” said Brian Throneberry, Business Director SiC Foundry at X-FAB. “We have robust rules in place to help guide design, mask tooling, engagement, and so on. Once the selection is finalized, XbloX automatically generates the process flow, which subsequently integrates quality systems, business functions, and commercial aspects for the customer.”
The XSICM03 platform continues to build on X-FAB’s leadership in wide-bandgap semiconductor manufacturing by aligning SiC process integration with CMOS-modeled specifications, design rules, and control plans. Customers will also benefit from future advancements as new modules are added to the XbloX ecosystem.
By offering a standardized, high-performance, and highly scalable solution for SiC device manufacturing, X-FAB’s XbloX platform positions itself as a strategic enabler for fabless power semiconductor developers aiming to accelerate time to market and expand product portfolios efficiently.
Original – X-FAB
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ROHM has commenced mass production of its SCT40xxDLL series silicon carbide (SiC) MOSFETs in TO-Leadless (TOLL) packages, offering a significant 39% improvement in thermal performance compared to conventional TO-263-7L packages with equivalent voltage ratings and on-resistance. The new series is designed to meet the growing demand for compact, high-power components in applications such as AI server power supplies and energy storage systems (ESS), where power density and miniaturization are increasingly critical.
As modern industrial and consumer equipment evolves, applications such as compact photovoltaic (PV) inverters and high-efficiency server systems face dual requirements: increasing power capability and reduced system size. This is especially true for power factor correction (PFC) circuits in slim-profile “pizza box” server power supplies, where discrete semiconductors must conform to strict thickness constraints of 4 mm or less.
ROHM’s SCT40xxDLL series responds to these requirements with a compact 2.3 mm low-profile form factor—approximately 50% thinner than traditional equivalents—and a reduced component footprint by about 26%. The series also distinguishes itself with a rated drain-source voltage of up to 750 V, surpassing the standard 650 V found in many TOLL package MOSFETs. This higher voltage rating contributes to increased surge voltage tolerance, lower gate resistance requirements, and reduced switching losses.
The SCT40xxDLL lineup includes six models with typical on-resistance values ranging from 13 mΩ to 65 mΩ. Maximum current ratings span up to 120 A, depending on the device, making them suitable for a wide range of high-performance power conversion systems. Mass production began in September 2025.
SCT40xxDLL Series Overview:
Part Number VDSS Max (V) RDS(on) Typ (mΩ) ID Max (A) PD Max (W) Storage Temp (°C) SCT4013DLL 750 13 120 405 -40 to +175 SCT4020DLL 750 20 80 277 -40 to +175 SCT4026DLL 750 26 61 214 -40 to +175 SCT4036DLL 750 36 46 164 -40 to +175 SCT4045DLL 750 45 37 133 -40 to +175 SCT4065DLL 750 65 26 100 -40 to +175 These devices are suitable for use in:
- Industrial power supplies for AI servers and data centers
- Photovoltaic inverters and ESS
- General-purpose consumer power supply applications
ROHM also provides simulation models for all six variants via its official website to assist engineers with rapid circuit evaluation and design. The SCT40xxDLL series is available through authorized distributors.
Original – ROHM
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Infineon Technologies AG has announced that it will supply customized silicon carbide (SiC) power modules to Electreon, a leader in wireless electric vehicle (EV) charging technology. These modules will be integrated into Electreon’s dynamic in-road wireless charging infrastructure, which enables EVs to charge while driving via inductive power transfer.
Electreon’s wireless electric road system (wERS) embeds copper coils beneath road surfaces, transferring energy to vehicles in motion—such as trucks, buses, and passenger cars—without the need to stop and plug in. The coils are connected to the power grid and are activated when a compatible vehicle passes overhead. Infineon’s SiC modules serve as the core component of this system, efficiently converting grid power into inductive charging energy. This enables reliable, seamless, and energy-efficient charging in high-traffic zones including highways, ports, and mobility hubs like airports.
The customized EasyPACK™ 3B CoolSiC™ 2000 V modules developed by Infineon have been tailored to meet Electreon’s unique requirements. These modules support continuous power transfer with an average output of 200 kW and peak capabilities exceeding 300 kW. Their performance was validated during a recent deployment on France’s A10 highway, marking the world’s first highway to provide dynamic wireless charging for various types of electric vehicles in motion.
By enabling on-the-move charging, the system significantly reduces EV battery size requirements, leading to lower upfront vehicle costs, reduced weight, and increased cargo capacity. Electreon has already deployed Infineon’s customized modules in test installations across the U.S., Germany, France, Norway, Portugal, Sweden, Italy, Israel, and Japan, with plans for broader integration in long-distance routes.
“Electreon’s wireless charging system is a real game changer on the road to reducing carbon emissions in transportation,” said Dominik Bilo, Executive Vice President and Chief Sales Officer Industrial & Infrastructure at Infineon Technologies. “We’re proud to contribute to this groundbreaking innovation with our customized SiC power modules, which efficiently convert electrical energy to charge vehicles on the go, tailored to meet Electreon’s specific needs.”
“Wireless EV charging is already happening today, and Electreon is at the forefront of this transformation,” added Electreon CEO Oren Ezer. “We’re using Infineon’s advanced silicon carbide technology to make in-road charging even more powerful and efficient, allowing electric buses and trucks to operate continuously without relying on traditional charging stations.”
Silicon carbide semiconductors have become instrumental in high-power applications like EV charging due to their ability to operate at higher frequencies with reduced energy loss, support more compact system designs, and perform reliably under extreme environmental conditions. With this collaboration, Infineon and Electreon are advancing the adoption of scalable, clean, and efficient mobility infrastructure worldwide.
Original – Infineon Technologies
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Coherent Corp. has announced a significant advancement in its next-generation 300mm silicon carbide (SiC) platform, addressing the growing need for enhanced thermal efficiency in AI datacenter infrastructure.
Building on its established expertise in 200mm SiC technology, Coherent has developed a 300mm solution designed to support the increasing power density and heat dissipation requirements of next-generation datacenters. This development marks a key milestone in the industry’s shift toward larger-diameter SiC substrates, offering improved scalability, faster switching performance, and superior thermal management for high-performance computing environments.
The new platform delivers conductive SiC substrates characterized by low resistivity, low defect density, and high material homogeneity—features that are critical for achieving high-frequency operation, low energy dissipation, and thermal stability in demanding AI and data infrastructure applications.
“AI is transforming the thermal-management landscape in datacenters, and silicon carbide is emerging as one of the foundational materials enabling this scalability,” said Gary Ruland, Senior Vice President and General Manager at Coherent. “Our 300mm platform, which we plan to ramp in high volumes, delivers new levels of thermal efficiency that translate directly into faster, more power-efficient AI datacenters.”
In addition to datacenter applications, Coherent is expanding the use of its SiC technology in augmented and virtual reality (AR/VR) devices and power electronics. For AR smart glasses and VR headsets, the 300mm SiC substrates support thinner, more efficient waveguides, enhancing performance and reliability in compact optical modules. In power electronics, the larger wafer size enables higher device yields and lower cost per chip, supporting a range of applications including electric vehicles, renewable energy systems, and industrial automation.
The introduction of the 300mm SiC platform solidifies Coherent’s leadership in wide-bandgap semiconductor materials and underscores its commitment to enabling innovation across datacenter infrastructure, optics, and power electronics.
Original – Coherent
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Vishay Intertechnology, Inc. has announced the release of two new 1200 V silicon carbide (SiC) MOSFET power modules designed to enhance efficiency and system reliability in automotive, industrial, energy, and telecommunications applications. The new modules, designated VS-MPY038P120 and VS-MPX075P120, integrate advanced SiC technology in a low-profile MAACPAK PressFit package and are aimed at supporting medium to high frequency operations.
Each module combines Vishay’s latest generation of SiC MOSFETs with an NTC thermistor for integrated temperature sensing and fast intrinsic SiC diodes for minimized reverse recovery. These features result in reduced switching losses and higher efficiency in a range of demanding applications, including electric and hybrid vehicle chargers, solar inverters, motor drives, UPS systems, HVAC systems, large-scale energy storage, and telecom power supplies.
The rugged transfer mold construction of the new modules contributes to longer operational lifespans compared to traditional designs, while offering improved thermal resistance. Their compact, low-profile package design minimizes parasitic inductance and electromagnetic interference (EMI), and helps conserve board space. In addition, the PressFit pin layout follows established industry standards, facilitating drop-in replacement for existing solutions with enhanced electrical performance.
The VS-MPY038P120 features a full-bridge inverter topology, an on-resistance of 38 mΩ, and a continuous drain current of 35 A at 80 °C. The VS-MPX075P120 adopts a three-phase inverter topology, with an on-resistance of 75 mΩ and a continuous drain current of 18 A. Both modules support high-speed switching, offer low capacitance, and operate at junction temperatures up to 175 °C. They are RoHS-compliant and halogen-free.
Samples and production volumes for the VS-MPX075P120 and VS-MPY038P120 are currently available, with standard lead times of 13 weeks.
Original – Vishay Intertechnology
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The U.S. International Trade Commission (ITC) has issued a preliminary ruling finding that Innoscience has violated one of the gallium nitride (GaN) technology patents held by Infineon Technologies AG. The ITC also confirmed the legal validity of both patents asserted by Infineon in the case.
The dispute centers on Innoscience’s alleged unauthorized use of Infineon’s patented GaN technologies. A final determination by the ITC is expected on April 2, 2026. Should the preliminary ruling be upheld, it will result in an import ban of the allegedly infringing Innoscience products into the United States.
“This ruling is another testament to the strength of Infineon’s intellectual property and confirms our commitment to vigorously defend our patent portfolio against infringements and ensuring fair competition in the market,” said Johannes Schoiswohl, Senior Vice President and Head of Infineon’s GaN Systems Business Line. “We remain dedicated to fostering innovation and advancing semiconductor technology to address the world’s most pressing challenges, from decarbonization to digital transformation.”
The decision in the U.S. adds to a series of favorable outcomes for Infineon in similar disputes. In a separate case in Germany, the German patent office recently upheld the validity of an Infineon GaN patent in a slightly amended form, and Infineon is pursuing infringement claims related to that patent in the Munich District Court. Additionally, in August 2025, the Munich District Court I ruled that another Infineon GaN patent had been infringed by Innoscience.
Infineon is a leading integrated device manufacturer in the GaN market and holds one of the industry’s most extensive intellectual property portfolios, with approximately 450 GaN patent families. GaN is a critical technology for high-performance, energy-efficient power systems used in applications ranging from renewable energy and AI data centers to industrial automation and electric vehicles.
By mastering all three essential materials in power electronics—silicon (Si), silicon carbide (SiC), and gallium nitride (GaN)—Infineon continues to play a pivotal role in advancing semiconductor innovation to support the global push for energy efficiency and sustainability.
Original – Infineon Technologies
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onsemi has signed a memorandum of understanding (MoU) with Innoscience to explore a strategic collaboration focused on expanding the production of gallium nitride (GaN) power devices. The agreement leverages Innoscience’s proven 200mm GaN-on-silicon process and high-volume manufacturing capabilities, alongside onsemi’s strengths in system integration, drivers, and packaging, with the shared goal of accelerating the delivery of cost-effective, energy-efficient GaN solutions to a global market.
The collaboration aims to address the growing demand for high-efficiency power systems across industrial, automotive, telecom, consumer, and AI data center applications by combining onsemi’s GaN power solutions with Innoscience’s manufacturing scale. Initial focus will be on the low and medium-voltage GaN range (40–200V), with future development plans targeting a global GaN power device market projected to reach $2.9 billion by 2030.
Key benefits of the collaboration include:
- Expanded GaN Portfolio: The partnership supports the extension of onsemi’s low and medium-voltage GaN product line.
- Scalable Manufacturing: Access to Innoscience’s high-volume 200mm GaN-on-silicon capacity enables true mass-market deployment.
- System-Level Innovation: Combines advanced packaging, drivers, and integration expertise to support rapid time-to-market and cost-effective system design.
- Market Reach: Enables high-efficiency, compact power solutions for motor drives, EV converters, DC-DC power supplies, telecom infrastructure, and data centers.
Antoine Jalabert, Vice President of Corporate Strategy at onsemi, noted: “As power demands rise across every sector, GaN offers higher efficiency, smaller size, and lower energy losses compared to other materials. Through a collaboration with Innoscience, we expect to access the industry’s largest GaN production footprint and quickly scale our offerings to enable broader adoption in mainstream applications.”
Yi Sun, Senior Vice President of Product & Engineering at Innoscience, added: “GaN technology is essential to building more efficient power systems and reducing global energy consumption. We are excited to explore this collaboration with onsemi to accelerate GaN adoption and establish a platform for integrated system development.”
onsemi expects to begin sampling initial devices in the first half of 2026. This initiative builds upon its comprehensive intelligent power portfolio, which includes silicon, silicon carbide (SiC), and GaN technologies—positioning the company to deliver optimal power systems across next-generation electrified and AI-driven markets.
Original – onsemi
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Navitas Semiconductor has announced the sample availability of its new 3300V and 2300V ultra-high voltage (UHV) SiC products. Offered in power module, discrete, and known good die (KGD) formats, these devices set a new standard in performance and reliability for high-power applications including solid-state transformers, grid infrastructure, renewable energy, and AI data centers.
The new UHV devices are built on Navitas’ fourth-generation GeneSiC™ platform, featuring a proprietary Trench-Assisted Planar (TAP) MOSFET architecture. This design incorporates a multi-step electric field management profile that reduces voltage stress and enhances blocking performance compared to traditional planar and trench SiC MOSFETs. The TAP structure also improves avalanche robustness and long-term reliability, supported by optimal source contact engineering for better cell-pitch density and current spreading. These innovations lead to superior switching characteristics and lower on-resistance at high operating temperatures.
The new devices are available in the advanced SiCPAK™ G+ power module format, in both half-bridge and full-bridge configurations. These modules incorporate epoxy-resin potting technology that provides over 60% improvement in power cycling lifetime and more than 10x improvement in thermal shock reliability compared to conventional silicone-gel-based modules. Key features include:
- AlN DBC substrates for enhanced heat dissipation
- High-current press-fit pins with double the current-carrying capacity
- Discrete packages available in TO-247 and TO-263-7 formats
Navitas has introduced AEC-Plus, an industry-first reliability benchmark that goes beyond AEC-Q101 and JEDEC standards. This qualification covers a wide range of rigorous test protocols, including:
- Dynamic reverse bias (DRB) and dynamic gate switching (DGS) testing
- Over 3x extended high-temperature and high-voltage testing (HTRB, HTGB)
- HV-THB for modules and HV-H3TRB for discretes and KGD
- Extended power and temperature cycling
The 3300V and 2300V devices are also offered as known good die (KGD), enabling system designers to build custom high-performance modules. Navitas applies stringent production screening, including singulated die testing at room and elevated temperatures, and six-side optical inspection to ensure the highest levels of quality, reliability, and yield.
“Navitas’ new 3300V and 2300V SiC product portfolio allows our customers to push the boundaries of efficiency and reliability in solid-state transformers for AI data centers, as well as utility-scale battery energy storage and renewable energy to define a new standard for such mission-critical system applications,” said Paul Wheeler, Vice President and General Manager of the SiC Business Unit.
Wheeler added, “This line of reliable, high-performance ultra-high voltage power semiconductors is expected to be a significant step in our roadmap to 10 kV SiC solutions. By combining our proprietary Trench-Assisted Planar SiC MOSFET technology with innovative power packages, we are able to extend reliability qualification and support more stringent production screening, to deliver industry-leading performance and robustness.”
The new SiC portfolio underscores Navitas’ strategic commitment to advancing ultra-high voltage power electronics for critical energy infrastructure and high-density computing environments.
Original – Navitas Semiconductor
