-
Fagor Electrónica, in collaboration with MONDRAGON Ventures, has announced an investment in Semi Zabala, a company specializing in the development of Gallium Nitride (GaN) HEMT transistors. The move reflects an ongoing focus on innovation and strategic diversification in the semiconductor sector.
This investment aligns with efforts to enhance access to next-generation GaN-based power technologies and supports the expansion of semiconductor capabilities in sectors such as aerospace and industrial power electronics.
Semi Zabala, currently progressing with its “Beyond The Power” industrial initiative, recently inaugurated a facility in Zubieta dedicated to the manufacturing and testing of power semiconductors. The new site is positioned to contribute to the regional semiconductor value chain and further establish Euskadi as a center for microelectronics development.
The collaboration reinforces regional industry cooperation and supports the advancement of wide-bandgap semiconductor technologies in emerging and high-performance applications.
Original – Fagor Electrónica
-
Infineon Technologies AG has expanded its cooperation with Anker to develop a high-speed, compact charger capable of delivering up to 160 watts of power. The project resulted in the release of a charger that combines compact design with high power density, incorporating Infineon’s digital controller and gallium nitride (GaN) technology.
The charger utilizes Infineon’s XDP™ XDPS2221E hybrid-flyback digital controller and CoolGaN™ transistors to support high-frequency, high-efficiency power conversion. Key design features include the integration of power factor correction (PFC) and hybrid-flyback stages to optimize performance and reduce component size. The charger provides up to 140 watts from individual USB-C ports, with dynamic allocation of 160 watts across multiple devices.
Infineon’s system-level approach includes the use of integrated GaN driver-transistor combinations and dual-transistor packages, allowing for improved thermal performance and reduced board space. The overall design minimizes peripheral components and supports cost-effective system layouts.
The collaboration is supported by an innovation center in Shenzhen, established by both companies to focus on efficient power solutions and fast-charging system development.
The new charger will be featured during CES 2026 in Las Vegas.
Original – Infineon Technologies
-
Innoscience and Allegro MicroSystems have announced a collaborative 4.2kW all-GaN power reference design aimed at meeting the efficiency and density demands of next-generation AI data centers and edge computing platforms.
The solution integrates Innoscience’s proprietary GaN power transistors with Allegro’s AHV85110 isolated gate driver, known for its integrated bias supply and self-powered architecture. This combination enables Titanium-grade efficiency and power densities exceeding 100 W/in³, addressing both performance and compactness requirements in high-power computing environments.
The reference design leverages a fully GaN-based architecture optimized for fast switching and low electromagnetic interference (EMI). The AHV85110 driver’s low common-mode capacitance and integrated power supply contribute to simplified system design, reducing passive component count on the driver board by up to 80% and enabling a 15% reduction in total system components.
This collaboration underscores the growing role of GaN in AI and hyperscale infrastructure, offering benefits in thermal design, board layout, and system integration. With this solution, engineers gain a ready-to-use platform that supports the development of compact, high-efficiency power conversion systems suitable for evolving compute-intensive applications.
The 4.2kW reference design is now available from Innoscience and provides a robust foundation for accelerating development in high-performance power electronics.
Original – Innoscience Technology
-
STMicroelectronics has launched a new family of integrated GaN-based smart power components aimed at improving efficiency, performance, and form factor in motor drive applications across consumer and industrial markets.
The new GaNSPIN system-in-package platform integrates high-voltage GaN transistors and gate drivers, delivering the benefits of wide-bandgap technology to motorized systems such as household appliances, power tools, and industrial equipment. This innovation allows manufacturers to reduce power losses, lower system costs, and design more compact modules.
The initial devices—GANSPIN611 and GANSPIN612—are designed for applications up to 400 W, such as compressors, pumps, and fans. Key features include:
- Integrated 650V GaN half-bridge and driver in a compact 9mm x 9mm QFN package
- Low RDS(on) (138mΩ for GANSPIN611, 270mΩ for GANSPIN612) to minimize conduction losses
- Optimized switching control to manage EMI and stress on motor windings
- Adjustable slew rates for system-level tuning
- Comprehensive protections, including UVLO, OVP, OCP, thermal shutdown, and interlocking
- Integrated bootstrap diode for simplified high-side drive
- Built-in standby function to support energy-saving modes
The GaNSPIN platform supports both 110V and 230V AC input systems, targeting universal appliance compatibility. By enabling heatsink-free operation in many cases, the devices help reduce board size by up to 60% and lower the bill of materials—key considerations in both cost-sensitive and space-constrained designs.
These latest GaN-based ICs from ST extend the benefits of wide-bandgap technology beyond power adapters and chargers, bringing new levels of efficiency and integration to motion control systems in a broad range of applications.
Original – STMicroelectronics
-
GlobalFoundries and Navitas Semiconductor have announced a long-term strategic partnership focused on advancing gallium nitride (GaN) technology, design, and manufacturing capabilities within the United States. This collaboration aims to deliver next-generation GaN solutions for high-power applications including AI datacenters, performance computing, energy infrastructure, and industrial electrification—markets where power density and energy efficiency are critical.
Navitas Semiconductor, a pioneer in GaN and high-voltage silicon carbide (SiC) technologies, has already achieved volume GaN adoption across applications such as mobile fast chargers, performance computing, electric vehicles, and energy storage. Through this new initiative, the company plans to accelerate the deployment of GaN in high-power domains.
GlobalFoundries brings decades of semiconductor manufacturing experience, with a focus on scalable and high-reliability production. Under this partnership, the companies will jointly develop and manufacture GaN technology at GlobalFoundries’ Burlington, Vermont facility. Initial development is scheduled for early 2026, with volume production expected to begin later that year.
By combining GlobalFoundries’ advanced manufacturing infrastructure with Navitas Semiconductor’s proven device technology, the partnership is set to offer customers secure, high-performance GaN solutions developed domestically. The collaboration supports national security priorities and the transition to cleaner energy systems.
“GaN is transforming how the world moves power. This partnership represents a significant step forward for U.S. semiconductor leadership and the deployment of GaN technology to address essential applications,” said Tim Breen, CEO of GlobalFoundries.
Chris Allexandre, President and CEO of Navitas Semiconductor, added: “Our collaboration with GlobalFoundries ensures that Navitas can deliver the performance, efficiency, and scale required by high-power markets. Together, we are laying the foundation for next-generation applications essential to national competitiveness and energy sustainability.”
Original – Navitas Semiconductor
-
Micro Commercial Components (MCC) has introduced its fourth-generation Silicon Carbide (SiC) Schottky Barrier Diodes, engineered to tackle key challenges in high-performance power electronics, including thermal management, board space limitations, and long-term reliability under high-frequency and high-temperature conditions.
Built on MCC’s advanced SiC platform, the new devices offer low forward voltage (Vf) and ultra-low switching losses. This combination reduces conduction and switching dissipation, enabling downsized heatsinks and increased power density across various applications.
The diodes feature a positive temperature coefficient, which ensures safe current sharing during parallel operation and improved thermal stability. With negligible reverse recovery, they enable clean switching at high frequencies while minimizing electromagnetic interference (EMI). These attributes make them particularly well-suited for applications in power factor correction (PFC) stages, switching power supplies, motor drives, and traction systems.
Key specifications include:
- Voltage ratings: 650 V and 1200 V
- Current ratings: 2 A and 4 A
- Package types: TO-220AC and ITO-220AC
- Wide operating temperature range for consistent performance
- Compact packages that simplify integration and improve thermal conduction
MCC’s Gen4 SiC Schottky Diodes deliver robust, reliable performance for modern power designs that demand high efficiency, thermal resilience, and design flexibility.
Original – Micro Commercial Components
-
Wolfspeed, Inc. has announced a new line of 1200V Silicon Carbide (SiC) six-pack power modules that significantly raise the bar for high-power inverter performance. Leveraging Wolfspeed’s Gen 4 SiC MOSFETs and an advanced YM package design, these modules deliver three times the power cycling capability at operating temperature compared to other solutions in the same footprint, and enable up to 15% more inverter current.
The modules incorporate innovations like sintered die attach, epoxy encapsulation, and copper clip interconnects, resulting in a robust system with high durability. These design enhancements allow the modules to achieve superior power cycling endurance—an area traditionally limited by material and thermal fatigue—while maintaining high levels of electrical performance.
Performance improvements include a 22% lower RDS(on) at 125°C, a 60% reduction in turn-on energy losses (EON), and significantly improved diode behavior with 30% lower switching losses and 50% lower VDS overshoot during reverse recovery. These gains support higher system efficiency and improved thermal management under heavy load conditions.
The modules are drop-in compatible with existing IGBT module architectures, eliminating the need for redesign and simplifying integration. Their packaging design reduces assembly complexity by removing the need for laser-welded terminals or intricate cold plate mounting, making them attractive for applications in electric mobility, industrial drives, and heavy-duty vehicle platforms.
Wolfspeed’s new power modules are designed to support extended service life and reduced operational cost, addressing key industry concerns such as maintenance, energy efficiency, and sustainability. Sampling is currently underway, with general availability through distributors expected in early 2026.
Original – Wolfspeed
-
GE Aerospace has successfully demonstrated its fourth-generation Silicon Carbide (SiC) power MOSFETs at its Research Center in Niskayuna, New York. These advanced semiconductor devices mark a major step forward in switching speed, efficiency, and thermal durability across a range of high-demand applications.
The new Gen-4 SiC MOSFETs are available in a compact 5mm x 5mm chip format, offering 1200V blocking voltage and an impressively low RDS(on) of 11 mΩ. They also feature an industry-leading temperature rating of 200°C. Designed to meet the growing demands of electrification and energy efficiency, these devices are poised to support applications in automotive electrification, AI data centers, renewable energy, and industrial power systems.
Kris Shepherd, President and GM of Electrical Power Systems at GE Aerospace, noted that this generation of SiC devices offers a “step change in performance,” providing significant gains in efficiency, reliability, and power density across sectors including electric mobility, energy, and computing infrastructure.
As demand surges for efficient power solutions—driven by the expansion of AI data centers, electric vehicles, and energy infrastructure—SiC has emerged as a key enabler. Its superior power density and switching speed allow for compact, high-performance systems that traditional silicon-based devices can’t match.
GE Aerospace’s latest SiC MOSFETs are particularly well suited for high-stress, high-speed environments. In motorsport and performance vehicles, they enable advanced traction inverter systems that capture and redeploy energy during braking. In AI data centers, higher-voltage SiC switches simplify power architecture, reducing conversion losses and minimizing physical footprint.
These developments build on over 20 years of dedicated R&D, a robust intellectual property portfolio, and deep domain expertise in aerospace electrical systems.
GE Aerospace already provides SiC-based electric power generation, distribution, and conversion systems for aerospace, marine, and defense applications. With Gen-4 SiC MOSFETs now demonstrated, the company is also expanding its focus into automotive and data center industries, where demand for high-efficiency, compact, and thermally robust power solutions continues to accelerate.
This milestone highlights GE Aerospace’s leadership in power semiconductor innovation and its continued contribution to the electrification of transportation, computing, and energy infrastructure.
Original – GE Aerospace
-
Shin-Etsu Chemical Co., Ltd. has announced a major development milestone for its QST™ substrate—a 300-mm GaN growth substrate—achieved through collaboration with IMEC.
The 300-mm QST™ substrate was adopted in IMEC’s recently launched 300-mm GaN power device development program. In initial evaluations, a 5 µm-thick HEMT (High Electron Mobility Transistor) structure fabricated on Shin-Etsu’s QST™ substrate demonstrated a record-breaking voltage resistance exceeding 800 V. This represents the highest breakdown voltage ever achieved on a 300-mm GaN substrate that complies with SEMI standards and confirms the substrate’s outstanding in-plane uniformity and crystal quality.
The QST™ substrate was developed by QROMIS, Inc., based in California, and licensed to Shin-Etsu Chemical. Shin-Etsu manufactures 150-mm, 200-mm, and 300-mm QST™ substrates, as well as GaN-on-QST™ epitaxial wafers. In September 2024, the company began offering 300-mm QST™ sample substrates in collaboration with QROMIS, strengthening its commitment to advancing large-diameter GaN manufacturing.
This partnership has enabled Shin-Etsu to supply QST™ substrates for IMEC’s CMOS-based 300-mm GaN fab. The joint program aims to develop both 650 V-rated and future 1200 V+ GaN power devices targeted for high-performance applications, including AI data centers, automotive systems, and industrial power electronics.
The QST™ substrate’s thermal expansion coefficient is closely matched to GaN, which facilitates stable crystal growth and reduces challenges such as wafer warpage that typically hinder high-yield GaN growth on silicon at larger diameters. By solving these limitations, the QST™ platform allows for the cost-effective production of thick-film GaN devices on 300-mm wafers—a key factor in scaling next-generation power semiconductors.
Manufacturing was carried out using Aixtron’s Hyperion MOCVD equipment, which enabled the precise deposition of the HEMT structure during testing. The results confirmed superior yield potential and mechanical integrity at the 300-mm scale, marking a crucial step toward practical large-scale manufacturing of GaN power devices.
Shin-Etsu is currently preparing for mass production of 300-mm QST™ substrates and has already enhanced its facilities for 150-mm and 200-mm variants. The QST™ substrate lineup, ranging from 150 mm to 300 mm, is being evaluated by domestic and international partners for applications in power conversion, RF, and LED markets, particularly in light of growing demand for high-efficiency systems in data centers and electric vehicles.
With its scalable GaN technology, Shin-Etsu aims to accelerate the adoption of GaN devices and support the shift toward more sustainable and energy-efficient technologies across the global electronics industry.
Original – Shin-Etsu Chemical
-
SemiQ Inc has introduced five new SOT-227 modules as part of its expanding family of 1200 V Gen3 SiC MOSFETs. The newly launched modules offer RDSon values of 7.4 mΩ, 14.5 mΩ, and 34 mΩ, providing flexibility and enhanced performance for demanding power conversion systems.
These GCMS series modules integrate Schottky Barrier Diodes (SBDs), resulting in lower switching losses at high temperatures compared to the non-SBD GCMX modules. The devices are engineered for medium-voltage, high-power applications including battery chargers, photovoltaic inverters, server power supplies, and energy storage systems.
All modules undergo rigorous screening, including wafer-level gate-oxide burn-in testing beyond 1400 V and avalanche testing up to 800 mJ (330 mJ for 34 mΩ variants). They are designed for robustness, ease of installation, and thermal performance, featuring isolated backplates and direct mounting capability to heatsinks.
The 7.4 mΩ GCMX007C120S1-E1 module achieves low switching losses of 4.66 mJ (3.72 mJ turn-on, 0.94 mJ turn-off) and a body diode reverse recovery charge of 593 nC. Junction-to-case thermal resistance ranges from 0.23°C/W to 0.70°C/W depending on the module.
Commenting on the release, Dr. Timothy Han, President at SemiQ, stated: “The expansion of our third-generation 1200 V SiC MOSFET family marks another key milestone in SemiQ’s mission to deliver superior silicon carbide solutions for high-performance power applications. By broadening our portfolio with lower resistance options and rugged, easy-to-mount SOT-227 packages, we’re empowering designers to achieve higher efficiency, faster switching, and greater reliability across a wide range of energy and industrial systems.”
Original – SemiQ
