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Micro Commercial Components (MCC) has expanded its power semiconductor portfolio with the Gen5 silicon carbide Schottky diode series, a family of high-current 650 V SiC Schottky barrier diodes designed for low conduction losses, fast switching, and reliable operation under demanding electrical and thermal conditions.
Built on merged PiN Schottky (MPS) technology and packaged in the industry-standard D2-PAK format, the devices support compact high-power system designs while enabling efficient heat dissipation. The diodes are optimized for high-efficiency power conversion systems and combine a low forward voltage drop of approximately 1.3 V, near-zero reverse recovery behavior, and a maximum junction temperature of 175 °C.
These characteristics help reduce switching losses, increase power density, and simplify thermal management in applications such as power factor correction stages, industrial power supplies, renewable energy inverters, and high-current rectification circuits.
The series includes the SICB2065XG5M device and the automotive-qualified SICB2065XG5MQ variant, which complies with AEC-Q101 standards. With high current capability of up to 86 A, high-speed switching performance, and a positive temperature coefficient that helps prevent thermal runaway, the devices are designed to support efficient and stable operation even under high load and elevated temperature conditions.
According to MCC, the Gen5 SiC Schottky diode family enables designers to achieve higher efficiency and reliability targets while reducing electromagnetic interference and supporting compact system architectures in high-power applications.
Original – Micro Commercial Components
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Infineon Technologies AG announced that Chicony Power has selected its CoolGaN Transistors G5 to power multiple laptop adapters developed for a leading notebook manufacturer.
The design highlights how gallium nitride power semiconductors are enabling more compact and energy-efficient charging solutions. By using GaN technology, the new adapters can achieve smaller form factors while improving efficiency and sustainability for mainstream computing devices.
At the core of the adapter design are Infineon’s CoolGaN Transistors G5, optimized for fast switching and low conduction losses across a wide range of operating conditions. The devices are based on Infineon’s hybrid-drain gate injection transistor architecture, designed to deliver robust high-voltage gate operation, improved dynamic on-resistance performance, and higher saturation current to support reliable operation.
Compared with the previous generation, the G5 transistors deliver up to 30% improved performance in key figures of merit such as RDS(on) multiplied by gate charge. These improvements support higher efficiency and greater power density in compact adapter designs.
The adapter platform developed by Chicony Power incorporates high-frequency power architectures with optimized power factor correction and DC/DC conversion stages that leverage the fast switching capability of GaN devices. The design also includes EMI-optimized layouts and filtering to reduce electrical noise while maintaining strong compliance margins. Thermal optimization allows sustained power delivery in the 100 W to 300 W range while maintaining compact mechanical designs.
Infineon stated that it continues to expand its GaN portfolio, announcing more than 40 GaN products over the past year. The company is also progressing with scalable GaN manufacturing on 300-millimeter wafers, with initial samples already shipped to customers. According to Infineon, 300 mm GaN production will enable higher manufacturing capacity and faster delivery of GaN products as demand for high-efficiency power electronics grows.
Original – Infineon Technologies
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Wolfspeed announced the commercial availability of the industry’s first 10 kV silicon carbide power MOSFET, a development aimed at advancing high-voltage power conversion for grid infrastructure, industrial electrification, and AI data center applications.
The new device introduces silicon carbide capability at the 10 kV level, enabling new system architectures for high-voltage power electronics. According to the company, the technology supports improvements in system efficiency, reliability, and design flexibility for applications such as solid-state transformers, wind power systems, and medium-voltage uninterruptible power supplies.
The device also demonstrates high durability. Intrinsic time-dependent dielectric breakdown lifetime analysis indicates a projected operating lifetime of approximately 158,000 years at a continuous 20 V gate bias voltage. Wolfspeed stated that the technology also addresses bipolar degradation challenges that have historically affected 10 kV SiC MOSFETs, enabling reliable body diode operation required in many high-power systems.
The availability of 10 kV silicon carbide devices allows designers to simplify system architectures and reduce component counts. According to Wolfspeed, systems using the technology can reduce overall system cost by about 30% by enabling simpler inverter topologies and fewer power conversion stages. Power density improvements exceeding 300% are possible through higher switching frequencies, increasing from about 600 Hz to 10,000 Hz, which allows smaller magnetics and simplified gate drive and control circuits. The technology can also reduce system-level thermal requirements by up to 50% due to conversion efficiencies approaching 99%.
The fast switching capability of the device, with rise times below 10 nanoseconds, also enables solid-state switching solutions to replace conventional mechanical spark-gap switches in pulsed-power systems. These solid-state devices eliminate arcing, improve timing precision, and reduce maintenance requirements. Potential applications include geothermal power systems, semiconductor plasma etching, pulsed power for AI data centers, and sustainable fertilizer production.
The device, designated CPM3-10000-0300A, is currently available as a bare die for customer sampling and qualification. Wolfspeed stated that the commercialization of the 10 kV SiC MOSFET builds on nearly three decades of development in crystal growth, epitaxy, and high-voltage device manufacturing and enables customers to move prototype designs at this voltage level into production.
Original – Wolfspeed
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Micro Commercial Components (MCC) has introduced the SICWT40120G6M, a 1200 V silicon carbide Schottky diode designed to address switching losses, thermal stress, and reliability challenges in high-voltage, high-frequency power conversion systems.
Traditional rectifier solutions can increase power dissipation, require larger cooling solutions, and limit achievable power density, particularly in high-current and high-temperature environments. The new device is intended to improve efficiency and reliability in these demanding operating conditions.
The SICWT40120G6M is built on merged PiN Schottky (MPS) technology, enabling zero reverse recovery behavior along with low forward voltage and very low leakage current. These characteristics significantly reduce switching and conduction losses in high-frequency power conversion applications.
The diode supports high continuous and surge current capability and operates across a wide junction temperature range from −55°C to +175°C. A positive temperature coefficient helps maintain stable operation and reduces the risk of thermal runaway in high-power systems.
The device is packaged in a TO-247AD package designed for strong thermal performance, supporting efficient heat dissipation and enabling more compact and reliable system designs.
According to MCC, the new SiC diode targets applications including industrial power conversion, transportation systems, and EV charging infrastructure, where high efficiency, thermal robustness, and compact design are critical requirements.
Original – Micro Commercial Components
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Navitas Semiconductor and École Polytechnique Fédérale de Lausanne announced the exhibition of a 250 kW solid-state transformer (SST) solution at APEC 2026 in San Antonio, Texas.
The SST platform was developed by EPFL’s Power Electronics Laboratory and is designed to support the grid architecture required by next-generation data centers. The system replaces bulky low-frequency transformers while improving end-to-end efficiency. The design uses a single-stage, modularized bridge rectifier SST topology to convert 3.3 kV AC to 800 V DC at 250 kW power, enabling improved performance and modularity for modern data center infrastructure.
The demonstrator is built using Navitas GeneSiC ultra-high voltage 3300 V and high-voltage 1200 V silicon carbide trench-assisted planar MOSFETs and modules. The project is part of the Power Electronics Laboratory’s HeatingBits initiative, which aims to deploy and evaluate advanced power technologies inside EPFL’s operational data center.
According to Navitas, the collaboration demonstrates how medium-voltage power conversion can address the energy and thermal challenges associated with AI data centers. By combining high-voltage silicon carbide devices with a single-stage solid-state transformer architecture and advanced real-time control, the system enables scalable 800 V DC power distribution designed to improve efficiency from the grid to server racks while also supporting potential heat reuse.
EPFL researchers highlighted that the SST platform provides a galvanically isolated, scalable, and efficient interface between the medium-voltage AC grid and an 800 V DC data center architecture. The system also serves as a real-world experimental platform for advanced distributed control methods.
The Applied Power Electronics Conference (APEC) takes place from March 22 to 26 in San Antonio, Texas, where representatives from both Navitas and EPFL’s Power Electronics Laboratory will present the demonstrator at the Navitas booth.
Original – Navitas Semiconductor
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Novel Crystal Technology, Inc. will begin shipping 150 mm (6-inch) β-Ga₂O₃ (gallium oxide) substrate samples in March 2026. The company said the milestone represents a key step toward large-scale industrial adoption of next-generation high-voltage power devices.
β-Ga₂O₃ features a bandgap energy exceeding that of silicon carbide (SiC) and gallium nitride (GaN), enabling higher breakdown voltage, lower energy loss and greater device miniaturization. The substrates are produced using a melt growth method, which the company said offers a combination of high performance and scalability suited to applications such as railways, industrial systems and electric power infrastructure.
Global demand for high-voltage, high-power devices is rising due to electrification across industrial and transportation sectors and the expansion of AI data centers. While β-Ga₂O₃ wafers have previously been limited to 100 mm (4-inch) R&D use, transitioning to 150 mm aligns the material with standard production lines. Novel Crystal Technology said this shift will support ecosystem development and pave the way for mass production of 150 mm β-Ga₂O₃ epi-wafers targeted for 2029.
Key Product Features
- EFG Growth Technology: The company leverages experience with the EFG method used for 100 mm β-Ga₂O₃ substrates to ensure quality and supply stability at 150 mm.
- Industry-Standard Compatibility: The 150 mm diameter matches existing power device production lines, supporting commercialization efforts.
- Development Enablement: Early supply of high-quality monocrystalline substrates allows partners to advance epitaxial growth and device process development ahead of large-scale production.
To improve cost competitiveness, the company is developing its DG Method, a growth technology designed to eliminate the need for expensive precious-metal crucibles. Novel Crystal Technology said this approach is expected to enable pricing that surpasses SiC in cost competitiveness.
Strategic Timeline:
- 2027: Launch of 150 mm β-Ga₂O₃ epi-wafer samples
- 2029: Full-scale mass production of 150 mm β-Ga₂O₃ epi-wafers using the DG Method
- 2035: Targeted supply of 200 mm (8-inch) β-Ga₂O₃ substrates
Original – Novel Crystal Technology
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Navitas Semiconductor will present its latest GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power technologies at APEC 2026, booth #2027, in San Antonio, Texas, from March 22–26.
The company will highlight solutions targeting AI data centers, performance computing, grid and energy infrastructure, and industrial electrification.
Navitas will unveil a 10 kW ‘GaN-powered’ 800 V–to–50 V DC-DC platform, designed for next-generation AI data centers.
Key features include:
- Advanced 650 V and 100 V GaNFast FETs
- Three-level half-bridge architecture with synchronous rectification
- 98.5% peak efficiency
- 2.1 kW/in³ power density
- Support for both 800 V and ±400 VDC AI data center architectures
In addition, Navitas will showcase:
- A 12 kW AI data center power supply using IntelliWeave™ digital control
- An 8.5 kW OCP power supply
- A 4.5 kW CRPS power supply
For next-generation solid-state transformer (SST) applications, Navitas will present its SiCPAK™ power module portfolio, designed for high-efficiency (>98%) conversion from medium-voltage grids (13.8 kVAC to 34.5 kVAC) to 800 VDC or 1500 VDC.
The lineup includes:
- 3300 V ultra-high-voltage (UHV) SiC modules
- 2300 V UHV SiC modules
- 1200 V high-voltage solutions
A new gate driver evaluation board for dynamic characterization of UHV SiCPAK™ modules will also be demonstrated.
Navitas will debut ultra-compact:
- 240 W and 300 W GaN-based power solutions for AI-enabled high-performance computing
- 400 W to 1 kW GaN motor control systems for industrial applications
These designs emphasize superior efficiency, compact size, and high power density enabled by the latest GaNFast IC technology.
Navitas executives and engineers will participate in multiple technical sessions:
- March 24 | 8:55–9:20 AM CT | IS01.2
Maximizing MVHV SiC Performance and Reliability
Presenter: Sumit Jadav - March 25 | 11:05–11:30 AM CT | IS07.6
High-Power GaN ICs in 800V AI DC-DC Brick Solutions
Presenter: Llew Vaughan-Edmunds, VP & GM, GaN Business Unit - March 26 | 11:35–11:50 AM CT | IS27.4
Single-stage Power Converter Enabled by GaN Bidirectional Switches
Presenter: Llew Vaughan-Edmunds
With innovations spanning GaN and ultra-high-voltage SiC, Navitas continues to target high-power markets where efficiency, density, and reliability are critical—particularly as AI infrastructure and electrification accelerate globally.
Original – Navitas Semiconductor
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Infineon Technologies AG has expanded its CoolGaN™ portfolio with the new CoolGaN Drive HB 600 V G5 product family. The four new devices – IGI60L1111B1M, IGI60L1414B1M, IGI60L2727B1M and IGI60L5050B1M – integrate two 600 V GaN switches in a half-bridge configuration along with high- and low-side gate drivers and a bootstrap diode in a single package.
By combining key power stage functions into one thermally optimized solution, the new family reduces external component count, simplifies PCB layout challenges typically associated with fast-switching GaN devices and helps shorten development cycles. Infineon said the integrated approach allows designers to realize GaN’s core advantages, including higher switching frequencies, lower switching and conduction losses and greater power density.
Johannes Schoiswohl, Head of the GaN Business Line at Infineon, said the new solutions combine high-speed GaN performance with enhanced integration and robustness, helping designers shrink systems and improve efficiency in compact power electronics.
The CoolGaN Drive HB 600 V G5 devices target low-power motor drives and switched-mode power supplies. The integrated half-bridge architecture enables smaller magnetics and passive components, improved efficiency across operating conditions and enhanced dynamic performance in space-constrained designs.
The devices are engineered for high-speed precision, offering a 98 ns propagation delay with minimal mismatch to support efficient high-frequency operation and predictable timing. For simplified integration, the products feature PWM inputs compatible with standard logic levels and operate from a single 12 V gate driver supply. Fast under-voltage lockout (UVLO) recovery supports reliable start-up and transient performance.
For thermal optimization, the devices are housed in a 6 mm × 8 mm TFLGA-27 package with exposed pads, enabling efficient heat spreading and supporting heatsink-less designs in many applications.
Infineon said the new CoolGaN Drive HB 600 V G5 family strengthens its position in the GaN market by combining proven CoolGaN device technology with system-level integration and deep power conversion expertise, enabling customers to more easily adopt and scale high-efficiency GaN-based designs across industrial and consumer platforms.
Original – Infineon Technologies
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ROHM Co., Ltd. has announced plans to integrate its proprietary GaN power device development and manufacturing technologies with process technology from TSMC, establishing an end-to-end GaN production system within the ROHM Group.
Under a newly signed license agreement, TSMC’s GaN process technology will be transferred to ROHM’s Hamamatsu facility, enabling the company to strengthen its supply capabilities in response to rapidly growing demand for GaN in applications such as AI servers and electric vehicles (EVs).
Gallium nitride (GaN) power devices offer superior high-voltage and high-frequency performance, enabling higher efficiency and reduced system size. While already widely adopted in consumer applications such as AC adapters, GaN is increasingly being used in high-voltage systems including:
- Power units for AI servers
- On-board chargers (OBCs) for EVs
Demand in these segments is expected to accelerate further as electrification and AI infrastructure continue to expand.
ROHM has been active in GaN development for years. The company established mass production of 150V GaN devices at ROHM Hamamatsu in March 2022. In the mid-power range, ROHM strengthened its supply structure through external collaborations — with TSMC as a key partner.
Key milestones in the collaboration include:
- Adoption of a 650V GaN process from TSMC beginning in 2023
- A December 2024 partnership agreement focused on automotive GaN
The newly announced technology integration represents a deeper evolution of this collaboration.
ROHM aims to complete the technology transfer and establish the new production system in 2027, positioning the company to meet expanding demand in AI server and automotive applications.
Upon completion of the transfer, ROHM and TSMC will amicably conclude their automotive GaN partnership. However, both companies stated they will continue working together to advance higher-efficiency and more compact power supply systems.
By bringing GaN production capabilities fully in-house while leveraging TSMC’s advanced process technology, ROHM is strengthening its long-term competitiveness in next-generation power semiconductors.
Original – ROHM
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Micro Commercial Components (MCC) has introduced its Gen4 1200V SiC Schottky Diode Series, an automotive-qualified family of silicon carbide (SiC) Schottky Barrier Diodes engineered for high-efficiency, high-voltage power systems operating in demanding environments.
Rated at 1200 V VRRM, the new series features zero reverse recovery current, eliminating reverse recovery losses and significantly improving high-frequency efficiency. Compared with conventional silicon rectifiers, the Gen4 devices reduce switching losses and enable higher switching frequencies, contributing to improved overall power density across automotive, industrial and renewable energy applications.
Built on advanced Gen4 Junction Barrier Schottky (JBS) technology, the diodes deliver fast majority-carrier switching with enhanced leakage control and surge robustness. The devices offer forward voltage as low as 1.38 V at rated current, leakage current down to 0.1 µA at 25 °C, and capacitive charge as low as 10.2 nC (typical). They are specified for operation across a wide junction temperature range of −55 °C to +175 °C.
The series is AEC-Q101 qualified, supporting reliability requirements in automotive and harsh industrial environments. Additional features include high surge capability up to 85 A and a positive temperature coefficient of forward voltage to help prevent thermal runaway.
Available in DPAK and TO-220AC packages, the Gen4 1200V SiC Schottky Diode Series is designed to enable more efficient, compact and durable high-voltage power designs.
Key Features & Benefits:
- Zero reverse recovery current to eliminate reverse recovery losses and improve high-frequency efficiency
- AEC-Q101 qualification for automotive reliability
- 1200 V VRRM rating for high-voltage rectification architectures
- Forward voltage as low as 1.38 V to reduce conduction losses and thermal stress
- Ultra-low leakage current (down to 0.1 µA) for improved high-temperature stability
- High surge capability up to 85 A for demanding load transients
- Capacitive charge as low as 10.2 nC to reduce switching energy loss
- Operating junction temperature range of −55 °C to +175 °C
- Positive temperature coefficient to support thermal stability and prevent runaway
Original – Micro Commercial Components
