-
DISCO CORPORATION has made a decision to build a new manufacturing plant (Hiroshima Works Gohara Plant, hereinafter “Gohara Plant”) in the Kure City Sports Center (Gohara-cho, Kure City) that the company purchased from Kure City, Hiroshima Prefecture. Precision processing tool production is planned at the Gohara Plant, and construction of the plant is planned in three phases. This press release is a notice regarding the construction plans for phase 1.
Purpose of the New Plant
- Improved production capability
- Improved BCM capability and production efficiency
Outline of Gohara Plant’s Construction Phase 1
Address Inside Warahino mountain region, Gohara-cho, Kure-shi, Hiroshima Building area 13,179 m² Building structure Steel + Reinforced concrete, eleven stories, seismically isolated structure Total floor space 133,570 m² Building investment 33 billion yen Construction start date February 1, 2026 Construction completion date April 30, 2028 This information is regarding the building that will be constructed during phase 1 of construction. The total land area of the Gohara Plant (Kure City Sports Center) is 218,539 m²
Construction plans for phases 2 and 3 will be decided appropriately based on the situation.
Timeline of Acquiring the Kure City Sports Center
- Feb. 2023: Acquired preferential rights to negotiate with Kure City
- Nov. 2023: Officially concluded the sales contract
- Apr. 2025: Ownership transferred from Kure City to DISCO
- Acquisition amount: 2.5 billion yen
Original – DISCO
-
The JANS qualification represents the highest level of screening and acceptance requirements, ensuring the superior performance, quality and reliability of discrete semiconductors for aerospace, defense and spaceflight applications. Microchip Technology announced its completion of its family of radiation-hardened (rad-hard) power MOSFETs to the MIL-PRF-19500/746 slash-sheet specification and the achievement of JANSF qualification for its JANSF2N7587U3, 100V N-channel MOSFET to 300 Krad (Si) Total Ionizing Dose (TID).
Microchip’s JANS series of rad-hard power devices is available in voltage ranges from 100–250V to 100 Krad (Si) TID, with the family expanding to higher Radiation Hardness Assurance (RHA) levels, starting with the JANSF2N7587U3 at 300 Krad (Si) TID. The JANS RH MOSFET die is available in multiple package options including a plastic package using the MIL-qualified JANSR die, providing a cost-effective power device for New Space and Low Earth Orbit (LEO) applications. The ceramic package is hermetically sealed and developed for total dose and Single-Event-Environments (SEE).
The devices are designed to meet the MIL-PRF19500/746 standard with enhanced performance, making them excellent options for applications that demand high-reliability components capable of withstanding the harsh environments of space and extending the reliability of power circuitry.
“Meeting the stringent specifications required for rad-hard MOSFETs is extremely challenging, and Microchip is pleased to achieve this development milestone by leveraging its proprietary rad-hard by design process and technology,” said Leon Gross, corporate vice president of Microchip’s discrete products group. “Our advanced technology provides our aerospace and defense customers with highly reliable and cost-effective solutions that meet the growing demand of the market and their applications.”
The JANSF and JANSR RH power MOSFETs serve as the primary switching elements in power conversion circuits, including point-of-load converters, DC-DC converters, motor drives and controls, and general-purpose switching. With low RDS(ON) and a low total gate charge, these power MOSFETs offer improved energy efficiency, reduced heat generation and enhanced switching performance when compared to similar devices on the market.
Original – Microchip Technology
-
Navitas Semiconductor announced the release of its latest SiCPAK™ power modules with epoxy-resin potting technology, powered by proprietary trench-assisted planar SiC MOSFET technology, that have been rigorously designed and validated for the most demanding high-power environments, prioritizing reliability and high-temperature performance. Target markets include EV DC fast chargers (DCFC), industrial motor drives, interruptible power supplies (UPS), solar inverters and power optimizers, energy storage systems (ESS), industrial welding, and induction heating.
The new portfolio of 1200V SiCPAK™ power modules, enabled by advanced epoxy-resin potting technology, are engineered to withstand high-humidity environments by preventing moisture ingression and enable stable thermal performance by reducing degradation from power and temperature variations.
Navitas’ SiCPAK™ modules demonstrated 5x lower thermal resistance increase following 1000 cycles of thermal shock testing (-40 C to + 125 C) compared to conventional silicone-gel-filled case-type modules. Furthermore, all silicone-gel-filled modules failed isolation tests while SiCPAK™ epoxy-resin potted modules maintained acceptable isolation levels.
Enabled by over 20 years of SiC innovation leadership, Navitas’ GeneSiC™ ‘trench-assisted planar SiC MOSFET technology’ provides industry-leading performance over temperature, enabling up to 20% lower losses, cooler operation, and superior robustness to support long-term system reliability.
The ‘trench-assisted planar’ technology enables an extremely low RDS(ON) increase versus temperature, which results in the lowest power losses across a wider operating range and offers up to 20% lower RDS(ON) under in-circuit operation at high temperatures compared to competition. Additionally, all GeneSiC™ SiC MOSFETs have the highest-published 100%-tested avalanche capability, up to 30% better short-circuit withstand energy, and tight threshold voltage distributions for easy paralleling.
The 1200V SiCPAK™ power modules have built-in NTC thermistors and are available from 4.6 mΩ to 18.5 mΩ ratings in half-bridge, full-bridge, and 3L-T-NPC circuit configurations. They are pin-to-pin compatible with industry-standard press-fit modules. Additionally, optional pre-applied Thermal Interface Material (TIM) for simplified assembly is available.
Original – Navitas Semiconductor
-
The market for electric vehicles continues to gather pace with a strong volume growth of both battery electric vehicles (BEVs) and plug-in hybrid electric vehicles (PHEVs). The share of electric vehicles produced is expected to see double-digit growth by 2030 with a share of around 45 percent compared to 20 percent in 2024. Infineon Technologies AG is responding to the growing demand for high-voltage automotive IGBT chips by launching a new generation of products. Among these offerings are the EDT3 (Electric Drive Train, 3 rd generation) chips, designed for 400 V and 800 V systems, and the RC-IGBT chips, tailored specifically for 800 V systems. These devices enhance the performance of electric drivetrain systems, making them particularly suitable for automotive applications.
The EDT3 and RC-IGBT bare dies have been engineered to deliver high-quality and reliable performance, empowering customers to create custom power modules. The new generation EDT3 represents a significant advancement over the EDT2, achieving up to 20 percent lower total losses at high loads while maintaining efficiency at low loads. This achievement is due to optimizations that minimize chip losses and increase the maximum junction temperature, balancing high-load performance and low-load efficiency. As a result, electric vehicles using EDT3 chips achieve an extended range and reduce energy consumption, providing a more sustainable and cost-effective driving experience.
“Infineon, as a leading provider of IGBT technology, is committed to delivering outstanding performance and reliability”, says Robert Hermann, Vice President for Automotive High Voltage Chips and Discretes at Infineon Technologies. “Leveraging our steadfast dedication to innovation and decarbonization, our EDT3 solution enables our customers to attain ideal results in their applications.”
The EDT3 chipsets, which are available in 750 V and 1200 V classes, deliver high output current, making them well-suited for main inverter applications in a diverse range of electric vehicles, including battery electric vehicles, plug-in hybrid electric vehicles, and range-extended electric vehicles (REEVs). Their reduced chip size and optimized design facilitate the creation of smaller modules, consequently leading to lower overall system costs. Moreover, with a maximum virtual junction temperature of 185°C and a maximum collector-emitter voltage rating of up to 750 V and 1200 V, these devices are well-suited for high-performance applications, enabling automakers to design more efficient and reliable powertrains that can help extend driving range and reduce emissions.
“Infineon, as Leadrive’s primary IGBT chip supplier and partner, consistently provides us with innovative solutions that deliver system-level benefits,” said Dr. Ing. Jie Shen, Founder and General Manager of Leadrive. “The latest EDT3 chips have optimized losses and loss distribution, support higher operating temperatures, and offer multiple metallization options. These features not only reduce the silicon area per ampere, but also accelerate the adoption of advanced packaging technologies.”
The 1200 V RC-IGBT elevates performance by integrating IGBT and diode functions on a single die, delivering an even higher current density compared to separate IGBT and diode chipset solutions. This advancement translates into a system cost benefit, attributed to the increased current density, scalable chip size, and reduced assembly effort.
Infineon’s latest EDT3 IGBT chip technology is now integrated into the HybridPACK™ Drive G2 automotive power module, delivering enhanced performance and capabilities across the module portfolio. This module offers a power range of up to 250 kW within the 750 V and 1200 V classes, enhanced ease of use, and new features such as an integration option for next-generation phase current sensors and on-chip temperature sensing, contributing to system cost improvements.
All chip devices are offered with customized chip layouts, including on-chip temperature and current sensors. Additionally, metallization options for sintering, soldering and bonding are available on request.
The new EDT3 and RC-IGBT devices are already available for sampling. Further information is available at www.infineon.com/edt3
Original – Infineon Technologies
-
Mitsubishi Electric Corporation announced that it will begin shipping samples of two new SLIMDIP series power semiconductor modules for room air conditioners and other home appliances, the Full SiC (silicon carbide) SLIMDIP (PSF15SG1G6) and the Hybrid SiC SLIMDIP (PSH15SG1G6), on April 22.
Both modules, the first SiC versions in the company’s SLIMDIP series of compact, terminal-optimized modules, achieve excellent output and power loss reduction for energy savings in small- to large-capacity appliances. They will be exhibited at Power Conversion Intelligent Motion (PCIM) Expo & Conference 2025 in Nuremberg, Germany from May 6 to 8, as well as trade shows in Japan, China and other countries.
Mitsubishi Electric’s newly developed silicon carbide metal-oxide-semiconductor field-effect transistor (SiC-MOSFET) chip is incorporated into both new SLIMDIP packages. Compared to current silicon (Si)-based reverse-conducting insulated-gate bipolar transistor (RC-IGBT) SLIMDIP modules, these new SiC modules achieve higher output for larger-capacity appliances. Additionally, compared to the Si-based module, power loss is reduced by 79% with the Full SiC SLIMDIP and by 47% with the Hybrid SiC SLIMDIP for more energy-efficient appliances.
With these two new modules as well as existing Si-based RC-IGBT SLIMDIP modules, the SLIMDIP series now offers three options for use in inverter boards of appliances such as room air conditioners, each one suited to specific electrical capacity and performance needs, but all offered in the same package to help reduce the burden of designing inverter substrates.
Original – Mitsubishi Electric
-
LATEST NEWS / PRODUCT & TECHNOLOGY / SiC / WBGSemiQ Launches High-Efficiency 1200V SiC MOSFET Six-Pack Modules for Scalable, Compact Power Designs
April 16, 2025
2 Min ReadSemiQ Inc has announced a series of highly efficient 1200 V SiC MOSFET Six-Pack Modules. These have been designed to enable lower cost and more compact system-level designs at large scale.
The rugged, high-speed switching SiC MOSFETs implement a planar technology with rugged gate oxide and feature a reliable body diode. These are arranged in a three-phase bridge topology, with the modules additionally featuring split DC negative terminals, press-fit terminal connections and a Kelvin reference for stable operation.
The high-power-density modules benefit from low switching losses, as well as low junction-to-case thermal resistance and all parts have been tested beyond 1350 V, with 100% wafer-level burn in (WLBI).
They have been developed for applications including AC/DC converters, energy storage systems, battery charging, motor drives and PFC boost converters, including EV fast charging, induction heating and welding, renewable energy supplies and UPS.
The modules are operational to 175oC junction temperature, and have been designed for easy mounting, including direct mounting to a heatsink. The product family has been launched with 20, 40 and 80mΩ variants (GCMX020A120B2T1P, GCMX040A120B2T1P, GCMX080A120B2T1P) that have a power dissipation of 263, 160 and 103 W respectively.
They conduct a continuous drain current of 29 – 30A, and a pulsed drain current of 70 A. Additionally, they have turn-on switching energy of 0.1- 0.54 mJ and a turn-off switching energy of 0.02 – 0.11 mJ, with a switching time of 56 – 105 ns.
The module is available immediately in a 62.8 x 33.8 x 15 mm package including heatsink mountings.
Original – SemiQ
-
Navitas Semiconductor has announced its high-power GaNSafe™ ICs achieve automotive qualification for both AEC-Q100 and AEC-Q101, showcasing GaN’s next inflection into the automotive market.
Navitas high-power GaNSafe 4th generation family integrates control, drive, sensing, and critical protection features that enable unprecedented reliability and robustness in high-power applications. It is the world’s safest GaN with short-circuit protection (350ns max latency), 2kV ESD protection on all pins, elimination of negative gate drive, and programmable slew rate control. All these features are controlled with 4-pins, allowing the package to be treated like a discrete GaN FET, requiring no VCC pin.
The Automotive Electronics Council (AEC) lists various qualifications focused on failure mechanism-based stress tests for packaged integrated circuits (AEC-Q100) and discrete semiconductors (AEC-Q101) used in automotive applications. Navitas’ GaNSafe™ has been qualified to both standards to ensure that both the discrete power FET stage and the combined IC solution meet these stringent specifications.
To support the qualification, Navitas has created a comprehensive reliability report that analyzes over 7 years of production and field data. It demonstrates their track record, alongside generational and family improvements in robustness and reliability, establishing GaN power ICs as highly reliable and automotive-ready. This reliability report is available to qualified customers.
Additionally in March 2025, Navitas unveiled the world’s first production released 650V Bi-Directional GaNFast ICs with IsoFast Drivers, creating a paradigm shift in power to enable the transition from two-stage to single-stage topologies to further enhance efficiency, power density, and performance in AC-DC and AC-AC conversion. This would allow next-generation single-stage OBCs to provide bi-directional charging in a high-efficiency, extremely compact solution – which eliminates bulky capacitors and input inductors.
A leading EV and solar micro-inverter manufacturer have already begun their implementation of single-stage BDS converters to improve efficiency, size, and cost in their systems. GaNFast-enabled single-stage BDS converters achieve up to 10% cost savings, 20% energy savings, and up to 50% size reductions.
“Our latest reliability report is the culmination of years of innovation and field experience,” said Gene Sheridan, CEO and co-founder of Navitas. “With more than 250 million units shipped, over 2 trillion field devices hours and a cumulative field failure rate that is now approaching 100 parts per billion, we’re leading the charge in making GaN the go-to technology for EV power systems.”
Original – Navitas Semiconductor
-
Diodes Incorporated announced the expansion of its silicon carbide (SiC) product portfolio with a series of five high-performance, low figure-of-merit (FOM) 650V SiC Schottky diodes. Rated at 4A, 6A, 8A, 10A, and 12A, the DSCxxA065LP series is housed in the ultra-thermally efficient T-DFN8080-4 package and is designed for high-efficiency power switching applications, such as DC to DC and AC to DC conversion, renewable energy, data centers (especially those that process heavy artificial intelligence (AI) workloads), and industrial motor drives.
The industry-leading FOM, calculated as FOM=QC×VF, is attributed to:
- Negligible switching losses, thanks to the absence of reverse recovery current and low capacitive charge (QC), and
- Low forward voltage (VF) minimizing conduction losses, enhancing overall power efficiency.
These characteristics make them ideal for high-speed switching circuits.
The high-performance SiC diodes are also notable for their lowest reverse leakage (IR) in the industry, at 20µA (max.). This minimizes heat dissipation and conduction losses, improving system stability and reliability, particularly in comparison to silicon Schottky devices. This reduction in heat dissipation also lowers cooling costs and operating expenses.
The compact and low-profile T-DFN8080-4 (typ. 8mm x 8mm x 1mm) surface mount package incorporates a large underside heat pad, which reduces thermal resistance. Requiring less board space and providing a larger heat pad, the T‑DFN8080-4 is an ideal alternative to the TO252 (DPAK). This benefits circuit designs by increasing power density, reducing overall solution size, and lowering the cooling budget.
The 4A DSC04A065LP, 6A DSC06A065LP, 8A DSC08A065LP, 10A DSC10A065LP, and 12A DSC12A065LP are available at $1.25, $1.55, $1.80, $2.10, and $2.40, respectively, each in 2,500-piece quantities.
Original – Diodes Incorporated
-
Toshiba Electronics Europe GmbH introduces technologically advanced solutions that enable engineers to meet their system efficiency and sustainability design goals at PCIM 2025. This year, Toshiba showcases semiconductor solutions in key application areas, including e-mobility, industrial, energy, and infrastructure.
“Excellence in power – over its 150-year history, this is what Toshiba stands for,” says Armin Derpmanns, VP Marketing & Operations, Toshiba. “Innovative technologies and solutions, highest quality levels, and low-carbon footprint products support engineers in enhancing performance, reliability, and sustainability to build an all-electric society.”
At Toshiba’s stand, three demonstration areas are set to focus on the latest innovation of wide-bandgap (WBG) technology, advances for the next generation of Silicon MOSFETs and Motor Control related applications.
Toshiba will share updates on its recent advancements in 6-inch diameter silicon carbide (SiC), as well as 8- and 12-inch silicon (Si) wafer production. Additionally, examples of new IGBT/FRD, RC-IGBT and SiC MOSFET dies will be introduced. In terms of modules, samples of a 2-in-1 SiC module with pin fin cooler will be displayed. Visitors to the stand will be able to examine a mock-up of the new 1200V/350A middle voltage multi-chip package (MV-MCP) with double-sided heat dissipation, designed for xEV traction inverter applications.
Additionally, visitors to the booth can explore how Toshiba’s SmartMCD, featuring an integrated microcontroller with a gate driver, contributes to a higher efficiency for automotive motor applications, offering space and system cost savings.
The industrial area will include a new cordless power tool demo, demonstrating how Toshiba’s three-phase brushless DC (BLDC) motor drive circuit enables compact yet highly efficient motor control.
The display also features the Click boards™ demonstrator. Toshiba’s specialists will be on hand to explain how evaluation and prototyping boards, developed in collaboration with its partner MIKROE, can simplify the design process for engineers working on automotive and industrial motor control applications. The latest addition to the family, Clicker 4 Inverter Shield 2 extension board, illustrates how it can enable the precise and reliable control of BLDC motors for electric power steering (EPS), powered brakes, and pumps.
The energy (WBG) sector of Toshiba’s stand spotlights high power intelligent flexible package low voltage (iXPLV), and E3D SiC MOSFET modules.
For xEV inverter designers, visitors should make a point to see Toshiba’s presentation, titled: ‘Impact of SBD embedding into SiC MOSFETs on dynamic behaviour at High Temperature’ taking place at the Bruessel 1 stage, on 6th May between 11:20 and 11:40. Shunsuke Asaba will share research findings indicating that recovery loss remains constant across temperatures and consistent turn-on loss is therefore anticipated in inverter circuits regardless of temperature.
For those interested in the latest Toshiba power electronics and semiconductor device modelling developments, Kazuyasu Takimoto will present a poster session in the foyer, entitled: ‘Accurate IGBT Circuit Model Considering Impact of Dynamic Avalanche Phenomenon’. It takes place during the Modelling and Simulations II session on May 8th, which runs from 11:15 to 12:45.
Original – Toshiba
-
Hyperdrives, a pioneer in advanced electric motor technology, has chosen CISSOID’s state-of-the-art Silicon Carbide (SiC) Inverter Control Modules (ICMs) to power its revolutionary hollow conductor cooled electric motors. This collaboration aims to set new standards in power density, efficiency, and performance within the electric vehicle industry and beyond.
Hyperdrives’ innovative approach utilizes a direct cooling system that dissipates heat at its source by channelling cooling fluid through hollow conductor windings. This design enhances heat dissipation by a factor of ten, allowing for continuous currents three times higher than traditional systems and resulting in motors that are twice as power-dense. The company’s automotive flagship product, Hyperdrives One, exemplifies this technology, offering exceptional peak and continuous power and torque density while reducing material costs by up to 40%.
To complement this cutting-edge motor design, Hyperdrives has integrated CISSOID’s 3-Phase 1200V/550A SiC Inverter Control Module. Combining high efficiency with robust control, the CXT-ICM3SA series integrates SiC power modules, gate driver boards, and control boards featuring Intel Automotive’s T222 Adaptive Control Unit (ACU) with its accompanying control software. The combination ensures rapid development and deployment of high-performance e- mobility drivetrains. Motor drive developers can also leverage CISSOID’s SiC Inverter Reference Designs to further accelerate their design cycle.
Benjamin Hengstler, Co-Founder of Hyperdrives, expressed enthusiasm about the partnership: „Finding an inverter solution that matches the extreme power density of our hollow conductor cooled motors was a real challenge – but with CISSOID’s SiC Inverter Control Module we found exactly that. The result is an ultra-compact, ready-to-install EDU that is second-to-none in gravimetric and volumetric power density. The great feedback from our customers in automotive, aviation and marine is a testament to this long-standing collaboration.”
Pierre Delatte, CTO of CISSOID, added: “Partnering with Hyperdrives is an exciting opportunity to push the boundaries of electric drive systems. Our SiC inverter technology is designed to meet the highest standards in power conversion, and together with Hyperdrives’ cutting-edge motors, we are enabling a new era of electrification.”
This strategic collaboration between Hyperdrives and CISSOID is poised to deliver electric drive systems that offer unparalleled efficiency, compactness, and performance, setting a new benchmark in the electric vehicle industry.
Original – CISSOID
