-
Infineon Technologies AG has broken ground for a new semiconductor backend production site in Samut Prakan, south of Bangkok, optimizing and further diversifying its manufacturing footprint. After an official meeting with the Prime Minister of Thailand, Paetongtarn Shinawatra, at the Government House, Infineon’s Chief Operations Officer Dr. Rutger Wijburg launched the construction of the new fab.
The first building is planned to be ready for operations at the beginning of 2026. Further ramp-up will be managed flexibly in line with market demand. For 2025, all expenditures of the new site are already included in the Capex projections of the company. The project is supported by the Thailand Board of Investment (BOI). The highly automated fab will play a crucial role in diversifying Infineon’s manufacturing landscape as global decarbonization and climate protection efforts drive demand for power modules, e.g. in industrial applications and renewables.
“As decarbonization and digitalization are strong structural growth drivers for the semiconductor industry, we are establishing a state-of-the-art backend fab in Thailand to meet future customer demand and strengthen supply chain resilience. This investment is a key step in our strategy to further diversify our manufacturing footprint and optimize it in terms of costs, while matching the expansion of our frontend capacities,” said Rutger Wijburg, COO of Infineon. “Our new backend site is designed to operate with high efficiency, resilience and quality, ensuring that we can reliably deliver high-quality products to our customers.”
“The Thailand Board of Investment welcomes and supports the Infineon Technologies decision to invest in a new backend fab in Samut Prakan, Thailand. This strategic step underscores the importance of a close and reliable partnership between Infineon and the government of Thailand, and demonstrates the mutual confidence in Thailand’s business environment and growth potential. The establishment of the National Semiconductor and Advanced Electronics Policy Committee in December 2024, along with Infineon’s investment, will significantly enhance the regional semiconductor industry and ecosystem, positioning Thailand as a key player in the global semiconductor industry. We are committed to supporting the development of Thailand’s electronics industry as well as the successful implementation of the expansion of Infineon’s manufacturing site in the region,” said Narit Therdsteerasukdi, the BOI’s Secretary General.
Infineon will support developing a robust semiconductor ecosystem in Thailand, centrally located in Southeast Asia, covering key components and materials in the supply chain. By enhancing partnerships with local businesses and institutions, the company will strengthen the semiconductor ecosystem and the development of a skilled work force. Through close collaboration with universities and local entrepreneurs, Infineon helps to grow a talent pool of highly skilled engineers with expertise in advanced semiconductors. A comprehensive training and education program to improve competencies in AI, digitalization and automation has been developed. The first group of Thai engineers successfully completed this training program at other Infineon sites.
As Infineon is committed to achieve climate neutrality by 2030, decarbonization efforts are an integral part of design and construction of the new facilities. Continuously reducing its own carbon footprint along the entire value chain is a strategic priority of the company. The new site will be equipped with solar modules, generating its own renewable energy. Moreover, Infineon will closely collaborate with local energy suppliers to ensure a reliable and green power supply.
Original – Infineon Technologies
-
Mitsubishi Electric Corporation announced that it will begin shipping samples of two new S1-Series High Voltage Insulated Gate Bipolar Transistor (HVIGBT) modules, both rated at 1.7kV, for large industrial equipment such as railcars and DC power transmitters from December 26. Thanks to proprietary Insulated Gate Bipolar Transistor (IGBT) devices and insulation structures, the new modules offer excellent reliability and low power loss and thermal resistance, which are expected to increase the reliability and efficiency of inverters in large industrial equipment.
Mitsubishi Electric’s 1.7kV HVIGBT modules, first released in 1997 and highly regarded for their excellent performance and high reliability, have been widely adopted for inverters in power systems.
The new S1-Series modules incorporate Mitsubishi Electric’s proprietary Relaxed Field of Cathode (RFC) diode, which increases the Reverse Recovery Safe Operating Area (RRSOA) by 2.2 times compared to previous models for improved inverter reliability. In addition, the use of an IGBT element with a Carrier Stored Trench Gate Bipolar Transistor (CSTBT) structure helps reduce both power loss and thermal resistance for more efficient inverters.Furthermore, Mitsubishi Electric’s proprietary insulation structure increases the insulation voltage resistance to 6.0kVrms, 1.5 times that of previous products, resulting in more flexible insulation designs for compatibility with a wide range of inverter types.
Original – Mitsubishi Electric
-
Texas Instruments and the U.S. Department of Commerce announced an award agreement of up to $1.6 billion in direct funding through the U.S. CHIPS and Science Act, following the preliminary memorandum of terms announced in August 2024.
The funding will help support three of TI’s new 300mm wafer fabs currently under construction in Texas and Utah. Support from the CHIPS Act, including the 25% investment tax credit, will help TI provide a geopolitically dependable supply of essential analog and embedded processing semiconductors.
“As the largest analog and embedded processing semiconductor manufacturer in the U.S., TI is uniquely positioned to provide dependable, low-cost 300mm semiconductor manufacturing capacity at scale,” said Haviv Ilan, president and CEO of Texas Instruments. “The increasing number of electronic devices in our lives depend on our foundational chips, and we appreciate the support from the U.S. government to make the semiconductor ecosystem stronger and more resilient.”
The CHIPS Act direct funding will support TI’s investments through 2029 for three large-scale 300mm wafer fabs in Sherman, Texas (SM1 and SM2), and Lehi, Utah (LFAB2). Together, these fabs will manufacture tens of millions of analog and embedded processing chips every day that are critical to a variety of end markets, including automotive, industrial, personal electronics, communications equipment and enterprise systems.
Specifically, the CHIPS Act direct funding will be distributed upon completion of project milestones, supporting:
- Cleanroom construction and tool installations at SM1 in Sherman, Texas;
- Shell construction of SM2, a second fab in Sherman, Texas; and
- Cleanroom construction and tool installations at LFAB2, a second fab in Lehi, Utah.
These connected, multi-fab sites in Texas and Utah will benefit from shared infrastructure, talent and technology sharing, and a strong network of existing suppliers and community partners.
Combined, TI’s three new fabs in Texas and Utah will create 2,000 company jobs, along with thousands of indirect jobs for construction, suppliers and supporting industries. TI is also investing in building its future workforce. As part of the CHIPS Act award agreement, TI will also receive up to $10 million for workplace development efforts in Texas and Utah.
Consistent with TI’s longstanding commitment to responsible, sustainable manufacturing and environmental stewardship, the company’s 300mm wafer fabs will be entirely powered by renewable electricity. Additionally, TI is committed to reducing overall water consumption across its operations, endeavoring to achieve a 70% water reuse capability in Sherman, Texas, and Lehi, Utah. All of TI’s new 300mm fabs are also designed to meet LEED Gold standards for structural efficiency and sustainability.
Original – Texas Instruments
-
X-FAB Silicon Foundries SE has launched XSICM03, its next-generation XbloX platform, advancing Silicon Carbide (SiC) process technology for power MOSFETs, delivering significantly reduced cell pitch, enabling increased die per wafer and improved on-state resistance without compromising reliability.
XbloX is X-FAB’s streamlined business process and technology platform designed to accelerate the development of advanced SiC MOSFET technology. It integrates qualified SiC process development blocks and modules for planar MOSFET production, simplifying the onboarding process and significantly reducing design risks and product development time.
By combining proven process modules with robust design rules, control plans, and FMEAs, XbloX enables faster prototyping, easier design evaluation, and shorter time to market. This approach gives customers a competitive edge, allowing designers to create a diverse product portfolio while achieving production timelines up to nine months faster than traditional development methods.
This next generation platform provides active area design cell size reduction while maintaining robust process controls, as well as leakage and breakdown device performance. The XSICM03 platform with robust design rules allows customers to create SiC planar MOSFETs with a cell pitch that is over 25% smaller than the previous generation.
This improvement allows for up to a 30% increase in die per wafer compared to the previous generation. Leveraging proven process blocks, the platform ensures exceptional gate oxide reliability and device robustness. The enriched PCM library and enhanced design support allow for fast customer tape-out, resulting in faster product development.
Rico Tillner, CEO, X-FAB Texas explains: “With its streamlined approach, our next-generation process platform addresses the increasing demand for high-performance SiC devices in automotive, industrial, and energy applications. We enable existing and new customers in creating application-optimized product portfolios through accelerated prototyping and design evaluation, significantly reducing time to market.”
The next generation platform XSICM03 is now available for early access.
Original – X-FAB Silicon Foundries
-
Bosch has signed a preliminary memorandum of terms (PMT) under the CHIPS and Science Act with the U.S. Department of Commerce (DoC). It includes up to $225 million in proposed direct funding to support the transformation of the Bosch production facility in Roseville, California. The proposed investment would support the development of semiconductor manufacturing in the U.S. Bosch plans to invest up to $1.9 billion to transform the Roseville site into a facility that produces and tests silicon carbide (SiC) semiconductors. The Roseville site currently employs around 250 associates with potential to grow in the future.
In April 2023, Bosch announced its intention to acquire the assets of an existing wafer fab in Roseville. The acquisition was closed in August 2023 and since that time Bosch has begun the process to transform the site. Starting in 2026, the first chips will be produced on 200-millimeter wafers based on the pioneering SiC Bosch technology.
“Production of SiC chips in the United States is a key part of our strategic plan to reinforce our semiconductor portfolio and support our local customers,” said Michael Budde, president of Mobility Electronics for Bosch. “Silicon carbide chips help to enable greater range and more efficient recharging in battery-electric vehicles and plug-in hybrid vehicles to provide affordable electromobility options for consumers.”
The Roseville location has nearly 40 years of extensive experience in the design and production of semiconductors for automotive and industrial applications.
“We took the unique approach to transform an existing wafer fab rather than build a new facility,” said Thorsten Scheer, plant manager in Roseville and regional president of the Bosch Mobility Electronics division in North America. “A major reason was the talented workforce in place at Roseville. Already they have shown their skill and resolve as we transform the site for future production of silicon carbide chips.”
Since the acquisition of the site, Bosch has retained nearly all of the 250 associates during the transformation process as it prepares for the 2026 launch of SiC production. The company has provided advanced training where the Roseville team learns from other sites within the Bosch global manufacturing network.
In addition to training its current workforce, Bosch is also investing locally to help build up semiconductor expertise for the future. The Bosch Community Fund provided a $100,000 grant to the Sierra College Foundation in Rocklin, California for its Career Technical Education Support Fund. The grant has helped to support associated costs with certification fees, microcontroller kits, development material, software, protective gear, tools, entry and travel fees for STEM competitions, project supplies for STEM Clubs and more.
The Roseville site represents the first semiconductor production site in the United States for Bosch. Over the next years, the company intends to invest around $1.9 billion USD in the Roseville site and upgrade the manufacturing facilities to state-of-the-art processes. Proposed investment from the CHIPS and Science Act would help support the transformation of the site. Already the site has received a $25 million California Competes Tax Credit incentive from the Governor’s Office of Business & Economic Development (GO-Biz) to support redevelopment and investment in Roseville.
Bosch has indicated it plans to claim the Department of the Treasury’s Advanced Manufacturing Investment Credit (CHIPS ITC), which is 25% of qualified capital expenditures. Click here to learn more about the tax credit. In addition to the proposed direct funding of up to $225 million, the CHIPS Program Office would make approximately $350 million in proposed loans – which is a part of the $75 billion in loan authority provided by the CHIPS and Science Act – available to Bosch under the PMT.
As explained in its first Notice of Funding Opportunity, the Department of Commerce may offer applicants a PMT on a non-binding basis after satisfactory completion of the merit review of a full application. The PMT outlines key terms for a potential CHIPS incentives award, including the amount and form of the award. The award amounts are subject to due diligence and negotiation of award documents and are conditional on the achievement of certain milestones. After a PMT is signed, the Department of Commerce begins a comprehensive due diligence process on the proposed projects and continues negotiating or refining certain terms with the applicant. The terms contained in any final award documents may differ from the terms of the PMT being announced.
Original – Bosch
-
onsemi has unveiled plans to acquire Qorvo’s Silicon Carbide (SiC) JFET business, a strategic move that enhances its portfolio in high- and mid-voltage power semiconductors. The $115 million deal includes Qorvo’s United Silicon Carbide subsidiary and is expected to close in Q1 2025. This acquisition is projected to expand onsemi’s market opportunity by $1.3 billion by 2030, focusing on AI, data centers, EVs, and industrial markets. By leveraging its vertically integrated SiC supply chain, onsemi aims to boost efficiency, profitability, and innovation across key technology areas.
SiC JFET technology offers superior power efficiency, reduced costs, and versatility in advanced applications, including EV battery systems, AI-driven data centers, and renewable energy solutions. It promises to disrupt traditional silicon-based and GaN technologies, with its superior switching speed, lower on-resistance, and smaller die size. This acquisition positions onsemi to capitalize on the growing demand for sustainable, high-performance power solutions in a wide range of industries.
Moreover, SiC JFETs are designed to enable transformative advancements in industrial applications such as power supplies, solar power converters, and energy storage systems. These innovations align with market trends emphasizing higher efficiency and reliability. The technology also offers critical advantages in EV battery safety, ensuring quicker response and long-term dependability through solid-state switches that surpass conventional electromechanical solutions.
By integrating Qorvo’s business, onsemi also strengthens its presence in the competitive AI and data center markets. The shift to higher voltages and power capacities in these areas provides a unique opportunity for SiC JFETs to reduce costs and improve performance, establishing onsemi as a leader in next-generation semiconductor solutions.
Original – onsemi
-
ROHM and TSMC have entered a strategic partnership on development and volume production of gallium nitride (GaN) power devices for electric vehicle applications.
The partnership will integrate ROHM’s device development technology with TSMC’s industry-leading GaN-on-silicon process technology to meet the growing demand for superior high-voltage and high-frequency properties over silicon for power devices.
GaN power devices are currently used in consumer and industrial applications such as AC adapters and server power supplies. TSMC, a leader in sustainability and green manufacturing, supports GaN technology for its potential environmental benefits in automotive applications, such as on-board chargers and inverters for electric vehicles (EVs).
The partnership builds on ROHM and TSMC’s history of collaboration in GaN power devices. In 2023, ROHM adopted TSMC’s 650V GaN high-electron mobility transistors (HEMT), whose process is increasingly being used in consumer and industrial devices as part of ROHM’s EcoGaN™ series, including the 45W AC adapter (fast charger) “C4 Duo” produced by Innergie, a brand of Delta Electronics, Inc.
“GaN devices, capable of high-frequency operation, are highly anticipated for their contribution to miniaturization and energy savings, which can help achieve a decarbonized society. Reliable partners are crucial for implementing these innovations in society, and we are pleased to collaborate with TSMC, which possesses world-leading advanced manufacturing technology” said Katsumi Azuma, Member of the Board and Senior Managing Executive Officer at ROHM. “In addition to this partnership, by providing user-friendly GaN solutions that include control ICs to maximize GaN performance, we aim to promote the adoption of GaN in the automotive industry.”
“As we move forward with the next generations of our GaN process technology, TSMC and ROHM are extending our partnership to the development and production of GaN power devices for automotive applications,” said Chien-Hsin Lee, Senior Director of Specialty Technology Business Development at TSMC. “By combining TSMC’s expertise in semiconductor manufacturing with ROHM’s proficiency in power device design, we strive to push the boundaries of GaN technology and its implementation for EVs.”
Original – ROHM
-
VisIC Technologies announced a new partnership aimed at advancing high-efficiency GaN inverter technology for the EV market. This collaboration will provide automotive OEMs with power semiconductors that exceed silicon carbide (SiC) performance, while offering lower costs at device and system level.
In a recent test conducted at AVL’s state-of-the-art facilities in Germany, an inverter based on VisIC’s GaN-on-Silicon D³GaN components proved an outstanding performance. Mounted on AVL’s e-motor test bench and controlled by AVLs SOP eDrive controls algorithm, the system achieved a benchmark efficiency level of 99.67% at 10kHz, stunningly climbing to over 99.8% efficiency at 5kHz — which outperforms comparable SiC inverters by up to 0.5% and is cutting energy losses by more than 60%.
This breakthrough positions the AVL and VisIC partnership as a compelling option for automakers striving to balance high efficiency with affordability in EV design. It is worth noting that VisIC’s GaN-on-Silicon power devices require significantly less energy and therefore CO2 during the chip production process compared to SiC. They can be produced in widespread 200mm and 300mm silicon foundries, which makes scaling production a straightforward process.
“With AVL, we’re making cutting-edge GaN inverter technology accessible for even more electric vehicles, establishing a new benchmark for efficiency and cost-effectiveness in the industry,” said Gregory Bunin, CTO of VisIC Technologies. “Our partnership reflects a shared commitment to driving EV innovation that’s both impactful and accessible, bringing GaN’s unparalleled performance to a broader market.”
“Working with VisICs new GaN power module for high-power systems enables us to offer our customers cutting-edge solutions that are optimally aligned with the requirements of next-generation drive systems. These include, among other things, high power density combined with reduced overall system costs,” added Dr. Thomas Frey, Head of Segment E-Mobility & E-Drive System at AVL Software and Functions GmbH. “Together, we can significantly advance e-mobility and help reduce the carbon footprint.”
Looking ahead, AVL and VisIC plan to expand their GaN-on-Si platform to include 800V GaN power modules, ensuring that their technology remains scalable and adaptable to the needs of the growing BEV market. This collaboration places AVL and VisIC Technologies at the forefront of GaN inverter technology, establishing new standards for energy efficiency and performance across the EV industry.
Original – VisIC Technologies
-
VisionPower Semiconductor Manufacturing Company Pte Ltd (VSMC), the joint venture formed in September, 2024 by Vanguard International Semiconductor Corporation and NXP Semiconductors N.V. celebrated breaking ground at the site of the joint venture’s new 300mm wafer manufacturing facility in Tampines, Singapore.
The groundbreaking ceremony was attended by customers, suppliers, partners, association representatives, residents, and government officials. Executives from VSMC, VIS and NXP were also present to commemorate the start of construction on the new facility, which is anticipated to begin initial production in 2027. VSMC was also honored to have Dr. Tan See Leng, Minister for Manpower and Second Minister for Trade and Industry, participate in the ceremony.
“Singapore is renowned not only as Asia’s economic hub but also as a beacon of technological innovation. We are proud to announce the groundbreaking of our first 12-inch fab in Singapore, which will uphold the company’s core business philosophy, provide specialty IC foundry services, and lay the foundation for our future development. This fab will advance the semiconductor industry and bolster the local high-tech sector. Designed with modern technology and guided by green manufacturing principles, the fab reflects our firm commitment to the future. VSMC is dedicated to being a responsible corporate citizen, supporting economic growth while ensuring environmental sustainability.”VSMC and VIS Chairman Leuh Fang
“I’m humbled and excited to see construction of VSMC’s 300mm fab moving forward very swiftly. NXP has enjoyed decades of successful semiconductor manufacturing operations in Singapore, and the new VSMC fab is entirely aligned with our differentiated hybrid manufacturing strategy. This new fab will support NXP’s growth plans with supply control and geographic resilience at competitive cost.”NXP President and CEO Kurt Sievers
“We welcome the decision by VIS and NXP to jointly establish VSMC and its greenfield 12-inch wafer fab in Singapore. This is testament to Singapore’s attractiveness to global companies to site advanced manufacturing activities, and reinforces Singapore’s position as a critical global node in the semiconductor supply chain. The new fab will not only create about 1,500 good jobs, it will also facilitate business and partnership opportunities for local enterprises. Singapore will continue to invest in talent development, R&D, and decarbonization solutions to enhance our competitiveness and strengthen Singapore’s semiconductor ecosystem.”Ms Cindy Koh, Executive Vice President, Singapore Economic Development Board
Construction of the VSMC fab is on-track, with initial production slated to begin in 2027. Upon the successful ramp of the initial phase, a second phase will be considered and developed pending future business development by VIS and NXP. With an expected output of 55,000 300mm wafers per month in 2029, the joint venture will create approximately 1,500 jobs while contributing to the development of the upstream and downstream supply chains, contributing to Singapore and the global semiconductor ecosystem.
The fab will adopt a fully automated production model, integrating an Automated Material Handling System (AMHS) and comprehensive quality management through Artificial Intelligence applications. This will achieve fast, precise, high-yield, and high-quality manufacturing excellence, providing customers with competitive services and creating a smart fab in Singapore.
Addressing the company’s commitment to sustainability stewardship, the fab will be constructed in accordance with Singapore Green Mark standards and will incorporate rigorous green manufacturing measures. To help minimize environmental impact, the site will feature energy-efficient cooling and lighting systems, high degree of process water recycling, and the use of eco-friendly materials. In addition, several green office design principles will be integrated, such as ample natural light, abundant communal spaces, and lush greenery to foster and contribute to a culture of wellness.
On June 5, VIS and NXP announced plans to establish the VSMC joint venture in Singapore to build a 300mm wafer fab with a total investment of approximately $7.8 billion. On September 4, VIS and NXP announced the establishment of the VSMC joint venture, having obtained all necessary regulatory approvals from relevant authorities and injected capital to officially establish the VSMC joint venture. The joint venture marks a significant step to establishing geographic resilience and accelerating Singapore’s semiconductor ecosystem.
Original – NXP Semiconductors
-
Ampere, the intelligent electric vehicle pure player born from Renault Group and STMicroelectronics announced the next step in their strategic co-operation, starting in 2026, with a multi-year agreement between STMicroelectronics and Renault Group on the supply of Silicon Carbide (SiC) power modules, as part of their collaboration on a powerbox for the inverter for Ampere’s ultra-efficient electric powertrain.
Ampere and STMicroelectronics worked together on the optimization of the power module, the key element in the powerbox, to get the highest performance and best competitiveness in the e-powertrain, leveraging Ampere’s expertise in EV technology and STMicroelectronics’ expertise in advanced power electronics.
“This agreement is the result of the intensive work carried out with STMicroelectronics. By working upstream together, we were able to optimize and secure the supply of key components for our electric powertrains, to offer high performance EVs with increased range and optimized charging time. It perfectly aligns with Ampere’s strategy to master the entire value chain of power electronics for its e-powertrain, leveraging STMicroelectronics’ expertise in power modules,” said Philippe Brunet, SVP Powertrain & EV engineering, Ampere.
“ST is at the cutting edge of the development of advanced power electronics enabling the mobility industry to improve the performance of electrified platforms. With the optimization of these higher-efficient products and solutions to meet Ampere’s performance requirements, and our vertically integrated silicon carbide supply chain, we are supporting Ampere’s strategy for its next generation of electric powertrain,” said Michael Anfang, Executive Vice President Sales & Marketing, Europe, Middle East and Africa Region, STMicroelectronics. “ST and Ampere share a common vision for more sustainable mobility and this agreement marks another step forward in improved power performance to further contribute to concrete improvements to carbon emissions reduction by the mobility industry and its supply chain.”
Power modules, composed of numerous silicon carbide chips, manage and convert electrical power from the battery to drive the electric motor. They play a crucial role in the efficiency of the electric powertrain and battery range, as well as energy regeneration features, making them a key element of the efficiency of an electric car. They also contribute to the smoothness and responsiveness of driving.
STMicroelectronics and Ampere have collaborated on a powerbox for the supply of energy to Ampere’s new generation of electric motors. The powerbox is designed for optimum performance-size ratio across Ampere’s line-up, on 400 Volt battery EV vehicles and for Segment C-EVs with 800 Volt batteries, enabling greater autonomy and faster charging. 800 Volts is one of the key levers to achieve the 10%-80% quick charge in 15 minutes or less. This agreement is fully aligned with Ampere’s strategy to master the entire value chain of the electric vehicle, particularly by working further upstream with its partners and ensuring the best efficiency at each step.
As an integrated device manufacturer (IDM), STMicroelectronics ensures quality and security of supply to serve carmakers’ strategies for electrification. The collaboration with Ampere on the silicon carbide power modules and powerbox demonstrates STMicroelectronics’ leadership and system level experience of advanced power electronics, including its packaging expertise.
Original – Ampere
