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DENSO CORPORATION and ROHM Co., Ltd. announced that the two companies have reached a basic agreement to establish a strategic partnership in the semiconductor field. This agreement follows discussions and considerations that began in September 2024.
Recently, the importance of semiconductors that support the electrification and intelligence of vehicles has been increasing significantly. This is driven by the development and spread of electric vehicles aimed at achieving carbon neutrality, as well as the realization of automated driving, which is expected to contribute to zero fatalities in traffic accidents.
DENSO and ROHM have a long-standing collaboration in the trade and development of automotive semiconductors. Going forward, both companies will integrate DENSO’s advanced system construction capabilities in the automotive sector with ROHM’s cutting-edge semiconductor technology, cultivated in the consumer market. This partnership will focus on enhancing the lineup of high-quality devices, particularly analog ICs, that support vehicle electrification and intelligence, and deepening collaboration in development. Additionally, in highly compatible fields within their semiconductor businesses, both companies will discuss broad collaboration. By globally supplying products created through this co-creation, both companies aim to contribute to technological innovation in the automotive field and realize a sustainable mobility society.
To further solidify this partnership, DENSO and ROHM will continue to consider strengthening their capital relationship.
DENSO CORPORATION President & CEO, Shinnosuke Hayashi
DENSO positions semiconductors as key devices to realize next-generation vehicle systems and has been deepening its cooperative relationships with semiconductor manufacturers that possess rich experience and knowledge. ROHM has a wide range of semiconductor lineups that are crucial for automotive electronics products, essential for vehicle intelligence and electrification. We are very pleased that the partnership with ROHM is progressing smoothly. By further deepening the collaboration between both companies and integrating DENSO’s accumulated automotive technology and expertise, we believe we can contribute to the development of the mobility society through stable supply and enhanced product value.ROHM Co., Ltd. President (Representative Director), Katsumi Azuma
We are very pleased to deepen our collaborative relationship with DENSO, a leader in technological innovation for the mobility society. This partnership not only strengthens our relationship as suppliers but also envisions broad collaboration in the semiconductor business of both companies. Initially, we will focus on the development of analog ICs related to next-generation systems such as electrification, automated driving, and connected vehicles. Furthermore, without narrowing the scope, we will integrate our respective technologies, knowledge, and assets across a wide range of fields to contribute to technological innovation and stable supply in the automotive industry.Original – DENSO
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Infineon Technologies AG has received final approval for the funding of its new plant in Dresden (Smart Power Fab) from the German Federal Ministry for Economic Affairs. Infineon is expanding the site in order to meet customer demand for example for renewable energies, efficient data centers and electromobility. Infineon will invest five billion euros of its own money, creating as many as 1,000 new jobs.
This figure does not include additional jobs which will be generated in the investment’s ecosystem: Experts expect a positive job effect of 1:6 (Source: ZVEI-Studie). In addition, Infineon is also investing in Dresden through its participation in the joint venture “European Semiconductor Manufacturing Company (ESMC) GmbH”.
“The final funding approval for our Smart Power Fab is an important milestone for us as a company and is a clear signal to the European semiconductor ecosystem,” says Infineon CEO Jochen Hanebeck. “We are grateful to the German federal government, the Free State of Saxony and to the European Union for their support. The semiconductors we manufacture in Dresden are our contribution to making the future value chains of key European industries even more robust.”
Infineon’s Smart Power Fab not only helps strengthen European supply chains in the microelectronics sector, it also further solidifies the position of Dresden and Silicon Saxony as Europe’s largest semiconductor hub. The European Commission approved the funding by the German federal government on 20 February. The Smart Power Fab is being supported by both the European Chips Act and the IPCEI ME/CT innovation program (“Important Project of Common European Interest on Microelectronics and Communication Technologies”). Overall funding for the site from these sources totals approximately one billion euros.
Construction of the Smart Power Fab, currently one of Germany’s largest building projects, is proceeding as planned, with the building shell currently nearing completion. Infineon held a topping-out ceremony together with all those involved in construction activities in early April this year. Already in May 2023, Infineon celebrated the official groundbreaking, after the German federal government granted permission for an early project launch. Production is to begin in 2026.
Original – Infineon Technologies
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Infineon Technologies AG has been a pioneer in the market introduction of silicon carbide (SiC) power devices and trench technology for SiC MOSFETs, combining excellent performance with high robustness. Today, the CoolSiC™ product offering spans from 400 V to 3.3 kV and covers a broad range of applications, including automotive drivetrains, EV charging, solar energy systems, energy storage, and high-power traction inverters.
Building on a solid track record in SiC business development and leveraging its position as the innovator of charge-compensating devices in silicon (CoolMOS™), Infineon is now introducing a trench-based SiC superjunction (TSJ) technology concept.
“With the introduction of the TSJ concept, we are significantly expanding the technological capabilities of silicon carbide,” said Peter Wawer, President of Infineon’s Green Industrial Power Division. “The combination of trench and superjunction technology enables higher efficiency and more compact designs – an important step for applications requiring the highest levels of performance and reliability.”
Infineon is committed to gradually expanding its CoolSiC product portfolio, leveraging SiC TSJ technology. This expansion will encompass a diverse range of package types, including discretes, molded and frame-based modules, as well as bare dies. The extended portfolio will cater to a broad spectrum of applications, targeting both the automotive and industrial sectors.
The first products based on the new technology will be 1200 V in Infineon ID-PAK for automotive traction inverters and combine the advantages of trench technology and superjunction design, capitalizing on Infineon’s more than 25 years of experience in SiC and silicon-based superjunction technology (CoolMOS). This scalable package platform supports power levels of up to 800 kW, enabling a high degree of system flexibility. Key benefits of the technology include increased power density, achieved through an up to 40 percent improvement in R DS(on)*A, allowing for more compact designs within a given power class. Additionally, the 1200 V SiC trench-superjunction concept in ID-PAK enables up to 25 percent higher current capability in main inverters without compromising short-circuit capability.
This advancement also results in enhanced overall system performance, delivering improved energy efficiency, reduced cooling requirements, and higher reliability for demanding automotive and industrial applications. Moreover, the system benefits from reduced parallelization requirements, which simplify the design process and lower overall system costs. With these innovations, the Infineon ID-PAK package equipped with SiC TSJ technology contributes to the development of more efficient and cost-effective traction inverter designs for automotive applications.
“As the global number one in automotive semiconductors, Infineon sets the pace of innovation and helps build the bridge between technological progress of vehicles and sustainable mobility,” said Peter Schiefer, President of Infineon’s Automotive Division. “Our new trench-based SiC superjunction technology brings further value to electric vehicle drivetrains enabling higher efficiency and system design simplicity.”
As an early customer, Hyundai Motor Company development teams will engage with Infineon’s trench-superjunction technology, leveraging its benefits to enhance their EV offerings. This partnership is expected to drive the development of more efficient and compact EV drivetrains.
Initial ID-PAK 1200 V samples are now available for selected automotive drivetrain customers. The SiC TSJ-based ID-PAK 1200 V package is expected to be ready for volume production in 2027.
Original – Infineon Technologies
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With the rapid growth of AI data centers, the increasing adoption of electric vehicles, and the ongoing trends in global digitalization and reindustrialization, global electricity demand is expected to surge. To address this challenge, Infineon Technologies AG is introducing the EasyPACK™ CoolGaN™ Transistor 650 V module, adding to its growing GaN power portfolio.
Based on the Easy Power Module platform, the module has been specifically developed for high-power applications such as data centers, renewable energy systems, and DC electric vehicle charging stations. It is designed to meet the growing demand for higher performance while providing maximum ease of use, helping customers accelerate their design processes, and shorten time-to-market.
“The CoolGaN-based EasyPACK power modules combine Infineon’s expertise in power semiconductors and power modules,” says Roland Ott, Senior Vice President and Head of the Green Energy Modules and Systems Business Unit at Infineon. “This combination offers customers a solution that meets the increasing demand for high-performance and energy-efficient technologies in applications such as data centers, renewable energy, and EV charging.”
The EasyPACK CoolGaN module integrates 650 V CoolGaN power semiconductors with low parasitic inductances, achieved through compact die packing – enabling fast and efficient switching. Delivering up to 70 kW per phase with just a single module, the design supports compact and scalable high-power systems. Furthermore, by combining Infineon’s .XT interconnect technology with CoolGaN options, the module enhances both performance and reliability.
The .XT technology is implemented on a high-performance substrate, significantly reducing thermal resistance, which in turn translates to higher system efficiency and lower cooling demands. This results in increased power density and excellent cycling robustness, even under demanding operating conditions. With support for a broad range of topologies and customization options, the EasyPACK CoolGaN module addresses diverse requirements in industrial and energy applications.
Infineon has sold well over 70 million EasyPACK modules with various chipsets for a wide range of industrial and automotive applications. With the introduction of the CoolGaN power semiconductors in this package, Infineon is now expanding the application range of GaN as its use creates more demand into very high kilowatt applications.
The EasyPACK series leverages Infineon’s PressFIT contact technology, which ensures highly reliable and durable electrical connections between the module and the PCB. By utilizing a cold-welding process, PressFIT delivers gas-tight, solder-free joints that guarantee long-term mechanical stability and electrical conductivity, even under demanding thermal and mechanical conditions. This advanced design reduces manufacturing time and eliminates potential solder-related defects, offering a robust solution for high-reliability applications. Additionally, with its compact design, EasyPACK modules occupy up to 30 percent less PCB surface area than other conventional discrete layouts, resulting in a very cost-effective solution.
The newest 650 V CoolGaN generation provides increased performance and figures of merit. Infineon’s benchmark data shows that CoolGaN Transistor 650 V G5 products provide up to 50 percent lower energy stored in the output capacitance (E oss), up to 60 percent improved drain-source charge (Q oss) and up to 60 percent lower gate charge (Q g). Combined, these features result in increased efficiencies in both hard- and soft-switching applications.
This leads to a significant reduction in power loss compared to traditional silicon technology, ranging from 20 to 60 percent depending on the specific use case. The CoolGaN Transistor 650 V G5 product family offers a wide range of R DS(on) package combinations. Ten R DS(on) classes are available in various SMD packages, such as ThinPAK 5×6, DFN 8×8, TOLL and TOLT. All products are manufactured on high-performance 8-inch production lines in Villach (Austria) and Kulim (Malaysia). Target applications range from consumer and industrial switched-mode power supply (SMPS) such as USB-C adapters and chargers, lighting, TV, data center, and telecom rectifiers to renewable energy and motor drives in home appliances.
Infineon will showcase the EasyPACK modules with CoolGaN at PCIM 2025 in Nuremberg at the Infineon booth in Hall 7, Booth 470. Further information is available here.
Original – Infineon Technologies
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Infineon Technologies AG launched its new CoolSiC™ MOSFET 750 V G2 technology, designed to deliver improved system efficiency and increased power density in automotive and industrial power conversion applications. The CoolSiC MOSFETs 750 V G2 technology offers a granular portfolio with typical R DS(on) values up to 60 mΩ at 25°C, making it suitable for a wide range of applications, including on-board chargers (OBCs), DC-DC converters, auxiliaries for electric vehicles (xEVs) as well as industrial applications in EV charging, solar inverter, energy storage systems, telecom and SMPS.
The ultra-low R DS(on) values 4 and 7 mΩ enable outstanding performance in static-switching applications, making the MOSFETs a perfect choice for applications such as eFuse, high-voltage battery disconnect switches, solid-state circuit breakers, and solid-state relays. The best-in-class lowest R DS(on) 4 mΩ is featured in Infineon’s innovative top-side cooled Q-DPAK package, which is designed to provide optimal thermal performance and reliability.
The technology also exhibits excellent R DS(on) x Q OSS and best-in-class R DS(on) x Q fr, contributing to reduced switching loss in both hard-switching and soft-switching topologies with superior efficiency in hard-switching user cases. With reduced gate charge, the technology allows for faster switching and reduces gate drive losses, making them more efficient in high-frequency applications.
Additionally, the CoolSiC MOSFETs 750 V G2 offer a combination of high threshold voltage V GS(th),typ of 4.5 V at 25°C and ultra-low Q GD/Q GS ratio, which reinforce robustness against parasitic turn-on (PTO). Furthermore, the technology allows for extended gate driving capabilities, supporting static gate voltages of up to -7 V and transient gate voltages of up to -11 V. This enhanced voltage tolerance provides engineers with greater design margins and best compatibility with other devices in the market.
The CoolSiC 750 V G2 delivers unparalleled switching performance, great ease-of-use and superior reliability with firm adherence to AEC Q101 standards for automotive-grade parts and JEDEC standard for industrial-grade parts. It enables a more efficient, compact and cost-effective designs to fulfill the ever‑growing market needs and underscores its commitment to reliability and longevity in safety-critical automotive applications.
Infineon’s CoolSiC MOSFET 750 V G2 Q-DPAK 4/7/16/25/60 mΩ samples are available to order. More information is available at www.infineon.com/coolsic-750v
Original – Infineon Technologies
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Fraunhofer IAF has developed a monolithic bidirectional switch with a blocking voltage of 1200 V using its GaN-on-insulator technology. The switch contains two free-wheeling diodes and can deliver performance and efficiency benefits in bidirectional chargers and drives for electric vehicles as well as in systems for generating and storing renewable energy. The results will be presented together with other developments in power electronics from May 6 to 8, 2025, at PCIM Europe in Nuremberg.
Technological innovations in power electronics are not only essential for the success of the energy transition, they also provide sustainable support for economic development in Europe. The Fraunhofer Institute for Applied Solid State Physics IAF develops power electronic components based on the wide-bandgap compound semiconductor gallium nitride (GaN) to enable further developments in electric mobility, the energy industry, and climate technology.
Most recently, Fraunhofer IAF has made significant progress in high-voltage and low-voltage components: At PCIM Europe 2025, researchers will present a highly integrated bidirectional switch (MBDS) with a blocking voltage of 1200 V. They will also demonstrate the use of a conventional GaN transistor with a gate contact as a bidirectional switch in a 3-level T-type converter. Both results were achieved as part of the GaN4EmoBiL project funded by the German Federal Ministry for Economic Affairs and Climate Action (BMWK).
“Geopolitical challenges such as the current tariff conflicts are an opportunity for European economies to gain technological advantages in the key areas of energy generation and mobility by developing their own solutions in power electronics,” emphasizes Achim Lösch, Business Developer for High Frequency and Power Electronics at Fraunhofer IAF.
“The added value of innovative power electronics is obvious: Achieving more power, better efficiency, and greater compactness at the same time advances the relevant technologies of the future: Electric cars charge faster and energy from renewable sources can be converted and stored more efficiently. At Fraunhofer IAF, we are working intensively to provide positive impetus in these important areas through innovative GaN-based components,” explains Lösch.
Researchers at Fraunhofer IAF have developed a GaN MBDS suitable for the 1200 V voltage class with integrated free-wheeling diodes and successfully integrated it into their own GaN technology. The researchers used the new GaN-on-insulator technology of Fraunhofer IAF for the manufacturing: Highly insulating materials such as silicon carbide (SiC) and sapphire are used as the carrier substrate for the GaN power semiconductor to improve the insulation between the components and increase the breakdown voltage.
The MBDS blocks voltage and conducts current in two directions, which saves chip space and reduces conduction losses as there is only one split depletion region. The GaN MBDS can be used in grid-connected power converters for energy generation and storage as well as electric drive systems. In these applications, the MBDS enables the development of systems in the 1200 V class.
Developers are working intensively on electric vehicles in this voltage class as increasing blocking voltages offer significant advantages in terms of everyday usability: Charging power increases and energy losses during operation decrease as a result of lower resistance. Electric cars with 400 V currently dominate the market, but 800 V technology is gaining ground. The leap to 1200 V has a positive effect on the long-distance capability of electric cars and the utility value of electric trucks.
The 1200 V GaN MBDS with integrated peripherals will be presented by Dr. Michael Basler at the PCIM Conference on May 8 from 10:10 to 10:30 a.m. in the oral session on GaN Devices II on Stage München 1. It is based on Basler’s paper “Highly-Integrated 1200 V GaN-Based Monolithic Bidirectional Switch,” which will be published in conjunction with PCIM 2025.
Fraunhofer IAF has also made progress in the field of multi-level converters with bidirectional switches for blocking voltages up to 48 V: Researchers have used a conventional single-gate HEMT (high electron mobility transistor) based on the aluminum gallium nitride/gallium nitride (AlGaN/GaN) compound semiconductor heterostructure in a low-voltage 3-level T-type converter as a bidirectional switch, thereby achieving simpler control of the transistor than with a bidirectional transistor with two gates for such topologies. Like the 1200 V MBDS, this innovative approach enables simpler control in addition to a space-efficient component design.
On May 6, Daniel Grieshaber will present the results shown in his paper “Investigation of a Single-Gate GaN HEMT as Bidirectional Switch in a Low Voltage Multilevel Topology” at the PCIM Conference Poster Session in the GaN Devices I section from 3:30 to 5:00 p.m. in the foyer.
In addition to innovations in the field of bidirectional switches, researchers at Fraunhofer IAF are working along the entire semiconductor value chain on materials, components, modules and subsystems for GaN-based power electronics in the voltage classes 48 V, 100 V, 200 V, 600 V and 1200 V. The current focus is on lateral and vertical components, monolithic integration, and highly insulating substrates such as sapphire or SiC. In addition to the results presented at PCIM 2025, Fraunhofer IAF is already working on components in the 1700 V class.
Fraunhofer IAF will be presenting an overview of its research and development portfolio in power electronics at the PCIM Expo in Hall 6, Booth 260, from May 6 to 8. Among others, an epitaxial 8-inch GaN wafer, processed 4-inch GaN-on-SiC and GaN-on-sapphire wafers, GaN power ICs, integrated lateral and vertical GaN components and 600 V half-bridge modules based on GaN are being exhibited.
At the PCIM Conference, Dr. Richard Reiner will also summarize the latest power electronics developments at Fraunhofer IAF in his presentation “Lateral, Vertical, Bidirectional! Innovations and Progress in GaN Devices and Power ICs.” It will take place on May 7 from 10:50 to 11:10 a.m. on the Technology Stage.
Original – Fraunhofer IAF
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Navitas Semiconductor announced actions by its board of directors to advance the company’s growth strategy. These corporate governance enhancements reflect the board’s ongoing commitment to stockholder engagement and value creation for all Navitas stakeholders.
“We have taken an important step forward by strengthening our corporate governance and further aligning the board’s interests with those of our stockholders,” said Gene Sheridan, Navitas’ chief executive officer and co-founder. “We are confident that we have the right strategy in place to continue delivering disruptive advancements in our target markets. With the updates announced today, our board and leadership team are well positioned to capitalize on Navitas’ multi-billion dollar market opportunities and generate value.”
Board and Leadership Updates
Navitas’ board has appointed Richard Hendrix as its chair, effective immediately. Mr. Hendrix joined Navitas’ board as an independent director in 2021 and is chair of the audit committee and a member of the compensation committee. He has more than 30 years of capital markets leadership and advisory experience. He succeeds Mr. Sheridan, who will remain on the board as a director and continue as Navitas’ chief executive officer.
“I am honored to chair Navitas’ board as we work to advance our strategy and continue to enable a revolution in power electronics. Our board remains committed to maintaining strong corporate governance and creating value for our stockholders,” said Mr. Hendrix.
Daniel Kinzer, Navitas’ chief technology officer, chief operating officer and co-founder, has resigned from his executive roles and as a member of the board. Mr. Kinzer will continue to serve in an advisory role supporting technology and product innovation in the area of GaN technology.
Mr. Hendrix continued, “On behalf of the Board, I would like to thank Dan for his invaluable vision and leadership in building Navitas into the only pure-play, next-generation power semiconductor company. We appreciate his continued contributions as we embark on this next chapter of the company’s growth.”
In connection with Mr. Kinzer’s departure from the board, the board intends to appoint an independent director to stand for election as a Class I director at the 2025 annual stockholders’ meeting, along with Mr. Sheridan and Ranbir Singh. Additional details will be provided in the Company’s definitive proxy statement for the meeting to be filed with the U.S. Securities and Exchange Commission (SEC).
Formation of Executive Steering Committee
Navitas also announced the formation of an executive steering committee of the board, which will be responsible for a number of initiatives that include oversight and input on:
- Expense management and defining an accelerated path to profitability;
- Acceleration of the company’s product and technology roadmap;
- Enhancement of the company’s go-to-market and partnership strategies; and
- Appointment of operating, sales and technology executives.
The committee will work closely with Mr. Sheridan to ensure the effective execution of these strategic priorities. The committee will be chaired by Dr. Singh and include Mr. Hendrix and David Moxam, chair of the compensation committee and a member of the audit committee, as members.
In connection with the actions announced today, the company has entered into a cooperation agreement with Dr. Singh following constructive engagement. Details of the agreement will be provided in forthcoming SEC filings.
Original – Navitas Semiconductor
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ROHM has developed the new 4-in-1 and 6-in-1 SiC molded modules in the HSDIP20 package optimized for PFC and LLC converters in onboard chargers (OBC) for xEVs (electric vehicles). The lineup includes six models rated at 750V (BSTxxx1P4K01) and seven products rated at 1200V (BSTxxx2P4K01). All basic circuits required for power conversion in various high-power applications are integrated into a compact module package, reducing the design workload for manufacturers and enabling the miniaturization of power conversion circuits in OBCs and other applications.
In recent years, the rapid electrification of cars is driving efforts to achieve a decarbonized society. Electric vehicles are seeing higher battery voltages to extend the cruising range and improve charging speed, creating a demand for higher output from OBCs and DC-DC converters. At the same time, there is an increasing need in the market for greater miniaturization and lighter weight for these applications, requiring technological breakthroughs to improve power density – a key factor – while enhancing heat dissipation characteristics that could otherwise hinder progress.
ROHM’s HSDIP20 package addresses these technical challenges that were previously becoming difficult to overcome with discrete configurations, contributing to both higher output and the downsizing of electric powertrains.
The HSDIP20 features an insulating substrate with excellent heat dissipation properties that suppresses the chip temperature rise even during high power operation. When comparing a typical OBC PFC circuit utilizing six discrete SiC MOSFETs with top-side heat dissipation to ROHM’s 6-in-1 module under the same conditions, the HSDIP20 package was verified to be approx. 38°C cooler (at 25W operation).
This high heat dissipation performance supports high currents even in a compact package, achieving industry-leading power density more than three times higher than top-side cooled discretes and over 1.4 times that of similar DIP type modules. As a result, in the PFC circuit mentioned above, the HSDIP20 can reduce mounting area by approx. 52% compared to top-side cooled discrete configurations, greatly contributing to the miniaturization of power conversion circuits in applications such as OBCs.
Going forward, ROHM will continue to advance the development of SiC modules that balance miniaturization with high efficiency while also focusing on the development of automotive SiC IPMs that provide higher reliability in a smaller form factor.
Original – ROHM
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Navitas Semiconductor announced the release of its latest SiCPAK™ power modules with epoxy-resin potting technology, powered by proprietary trench-assisted planar SiC MOSFET technology, that have been rigorously designed and validated for the most demanding high-power environments, prioritizing reliability and high-temperature performance. Target markets include EV DC fast chargers (DCFC), industrial motor drives, interruptible power supplies (UPS), solar inverters and power optimizers, energy storage systems (ESS), industrial welding, and induction heating.
The new portfolio of 1200V SiCPAK™ power modules, enabled by advanced epoxy-resin potting technology, are engineered to withstand high-humidity environments by preventing moisture ingression and enable stable thermal performance by reducing degradation from power and temperature variations.
Navitas’ SiCPAK™ modules demonstrated 5x lower thermal resistance increase following 1000 cycles of thermal shock testing (-40 C to + 125 C) compared to conventional silicone-gel-filled case-type modules. Furthermore, all silicone-gel-filled modules failed isolation tests while SiCPAK™ epoxy-resin potted modules maintained acceptable isolation levels.
Enabled by over 20 years of SiC innovation leadership, Navitas’ GeneSiC™ ‘trench-assisted planar SiC MOSFET technology’ provides industry-leading performance over temperature, enabling up to 20% lower losses, cooler operation, and superior robustness to support long-term system reliability.
The ‘trench-assisted planar’ technology enables an extremely low RDS(ON) increase versus temperature, which results in the lowest power losses across a wider operating range and offers up to 20% lower RDS(ON) under in-circuit operation at high temperatures compared to competition. Additionally, all GeneSiC™ SiC MOSFETs have the highest-published 100%-tested avalanche capability, up to 30% better short-circuit withstand energy, and tight threshold voltage distributions for easy paralleling.
The 1200V SiCPAK™ power modules have built-in NTC thermistors and are available from 4.6 mΩ to 18.5 mΩ ratings in half-bridge, full-bridge, and 3L-T-NPC circuit configurations. They are pin-to-pin compatible with industry-standard press-fit modules. Additionally, optional pre-applied Thermal Interface Material (TIM) for simplified assembly is available.
Original – Navitas Semiconductor
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Polar Semiconductor announced the finalization of a strategic agreement with Renesas Electronics Corporation to license their Gallium Nitride on Silicon D-Mode (GaN-on-Si) technology. As part of this agreement, Polar will fabricate High Voltage 650V Class GaN-on-Si devices for Renesas and other customers in its 200mm automotive quality high-volume manufacturing facility in Minnesota. This facility, recently expanded with state-of-the-art processing and automation equipment, is poised to meet growing demand for next-generation semiconductor solutions.
Polar and Renesas will work together to scale commercial production of GaN devices, expanding its use across critical industries, including automotive, data center, consumer, industrial, and aerospace & defense markets. The agreement ensures the U.S. has a reliable, domestic source for this cutting-edge semiconductor technology.
Market adoption of GaN technology will be accelerated through cost efficiency and innovative device architectures enabled by scaling to 200mm fabrication. By leveraging Polar’s manufacturing expertise and Renesas’ proven power semiconductor technology and commercial leadership, this strategic collaboration ensures customers a secure supply of cost-competitive, superior quality, and high-performance GaN device wafers.
Surya Iyer, President and COO of Polar Semiconductor, said, “This licensing and commercial production agreement underscores our commitment to strengthening the domestic semiconductor ecosystem. GaN is a game-changing technology for Power and RF, and with Renesas as our partner, we are well-positioned to ramp commercial production, secure key defense programs, and drive the next wave of semiconductor innovation.”
“We are excited to partner with Polar to scale our proven GaN technology to 200mm wafers and leverage our know-how across broad power conversion markets ranging from Infrastructure & AI to Energy & Industrial to e-Mobility & xEVs to high-value IoT,” said Chris Allexandre, SVP & GM, Power Products Group, at Renesas. “This collaboration ensures a strong, U.S.-based manufacturing capability for GaN products, provides multi-sourcing to our customers, and meets the growing demand for high-performance power solutions.”
Original – Polar Semiconductor
