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Toshiba America Electronic Components, Inc. presented its latest power semiconductor innovations at APEC 2026, with a focus on improving efficiency, power density, and system reliability across automotive, data center, and industrial applications.
A key highlight is the new UMOS 11 MOSFET family, which delivers improved switching characteristics and reduced RDS(on) per area compared to the previous UMOS 10 generation. These enhancements support higher efficiency and compact system designs, particularly in applications requiring fast switching and low conduction losses.
Toshiba is also emphasizing advanced packaging and wide bandgap technologies. This includes its top-side cooled TOGT package, designed to improve thermal dissipation in high power-density systems by transferring heat directly to the heatsink rather than the PCB. In parallel, the company is showcasing its latest SiC modules and 750V/1200V SiC devices targeting grid infrastructure and automotive inverters, alongside ongoing GaN developments for both low- and high-voltage applications.
Beyond discrete devices, Toshiba is presenting a broad system-level portfolio including microcontrollers, motor control solutions, and protection ICs, supported by reference designs such as 3kW server power supplies, automotive ECU power architectures, and motor drive systems.
From a market perspective, Toshiba’s APEC presence underscores a key industry trend: convergence of silicon, SiC, and GaN technologies within unified platforms to address diverse power requirements. Its vertically integrated manufacturing model remains a strategic differentiator, ensuring supply stability and quality—critical factors as demand accelerates in AI data centers, electrified mobility, and renewable energy systems.
Original – Toshiba
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Renesas Electronics Corporation has launched the TP65B110HRU, the industry’s first bidirectional GaN switch based on depletion-mode (d-mode) technology, enabling both positive and negative current blocking in a single device.
The new 650V SuperGaN® device is designed to simplify power conversion architectures in applications such as solar microinverters, AI data centers, and onboard EV chargers. By replacing traditional back-to-back FET configurations, the device allows true single-stage power conversion, reducing component count, system complexity, and losses.
Conventional silicon and SiC switches are unidirectional, requiring multi-stage topologies or back-to-back configurations that increase switch count and reduce efficiency. In contrast, Renesas’ bidirectional GaN device integrates this functionality into a single component. For example, a solar microinverter can reduce its switch count by half and eliminate DC-link capacitors, while achieving efficiencies above 97.5%.
The device combines a high-voltage GaN structure with co-packaged low-voltage silicon MOSFETs, enabling compatibility with standard gate drivers without requiring negative gate bias. This simplifies gate drive design while maintaining robust switching performance in both hard- and soft-switching topologies. With dv/dt immunity exceeding 100 V/ns and low on-resistance of 110 mΩ, the device supports high-frequency, high-density designs.
From a technology perspective, this marks a significant step toward system-level simplification in power electronics. Bidirectional GaN enables new converter topologies, particularly in high-growth segments like AI power infrastructure and distributed energy systems, where efficiency, density, and BOM reduction are critical.
Renesas is positioning the device within its broader system solution strategy, offering evaluation kits and “Winning Combinations” that integrate controllers, drivers, and power devices to accelerate time-to-market and reduce design risk.
Original – Renesas Electronics
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ROHM Co., Ltd. announced it is reviewing strategic options to strengthen its long-term competitiveness, including evaluating a proposal from DENSO Corporation regarding a potential share acquisition.
The company highlighted that the power semiconductor industry is entering a critical phase, characterized by intensifying global competition and rapid technological innovation. In response, ROHM is pursuing structural reforms under its Medium-Term Management Plan (announced November 2025), focusing on portfolio optimization, enhanced R&D capabilities, and potential scale expansion through partnerships or integration.
As part of this broader strategy, ROHM has been in ongoing discussions since mid-2024 with Toshiba Corporation and Japan Industrial Partners to explore collaboration opportunities in semiconductors. These discussions remain active and are being evaluated alongside other strategic alternatives.
The newly received proposal from DENSO represents a different strategic direction compared to ROHM’s current standalone transformation plan. To ensure an objective evaluation, the company has established a special committee composed of independent directors to assess the proposal against other options, with a focus on long-term corporate value and shareholder interests.
Importantly, ROHM emphasized that no decision has been made by either the Board or the special committee at this stage. The company also noted concerns from business partners regarding operational continuity amid media speculation, reaffirming its commitment to stable supply, product quality, and ongoing operations.
From a market perspective, this development underscores increasing consolidation pressure within the power semiconductor ecosystem—particularly in automotive and electrification segments—where scale, vertical integration, and close OEM relationships are becoming critical competitive factors.
Original – ROHM
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Navitas Semiconductor announced two new package options for its 5th generation GeneSiC silicon carbide MOSFET platform, introducing a top-side cooled QDPAK package and a low-profile TO-247-4L package with asymmetrical leads. The new devices target applications requiring high power density and improved thermal performance, including AI data centers and energy infrastructure systems.
The devices are based on the company’s fifth-generation trench-assisted planar silicon carbide MOSFET technology. This architecture delivers a 35% improvement in the RDS(on) multiplied by gate-drain charge figure of merit and approximately a 25% improvement in the gate-drain to gate-source charge ratio. Combined with a stable gate threshold voltage greater than 3 V, the design helps prevent parasitic turn-on and enables predictable switching behavior in high-power systems.
The new QDPAK package features a top-side cooling structure designed to address thermal limitations of traditional PCB-based cooling approaches. Heat is transferred directly through the top of the package to a heatsink, improving thermal efficiency and enabling smaller system footprints. The package also reduces parasitic inductance, supporting cleaner switching at high frequencies. It provides a compact footprint of approximately 15 mm by 21 mm with a height of 2.3 mm and includes design features that extend creepage distance while supporting applications up to 1000 VRMS.
Navitas also introduced a low-profile TO-247-4L through-hole package designed for systems where vertical space is constrained. By reducing the height of the package on the PCB, the design enables higher power density compared with conventional TO-247-4 packages. The device also incorporates asymmetrical leads, including thinner leads for the gate and Kelvin-source connections, to improve manufacturing tolerances during PCB assembly.
The new packaging options are intended for applications such as AI data center power supplies and high-performance power conversion systems where compact form factors and efficient thermal management are essential.
The initial products include four 1200 V SiC MOSFETs with on-resistance values of 6.5 mΩ and 12 mΩ, offered in both QDPAK and TO-247-4L packages. Samples are available for customer evaluation.
Original – Navitas Semiconductor
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SK keyfoundry announced the development of a silicon carbide planar MOSFET process platform and revealed that it has secured its first order for a 1200 V SiC MOSFET product, marking the company’s entry into the silicon carbide compound semiconductor foundry market.
The newly developed platform supports a voltage range from 450 V to 2300 V and is designed to deliver high reliability and stability in high-voltage operating environments. According to the company, process optimization and tighter control of key manufacturing steps have enabled yields exceeding 90% while improving overall productivity.
SK keyfoundry also highlighted a customized process support service that allows device designers to fine-tune electrical characteristics and specifications according to their application requirements.
Following completion of the process platform, the company secured an order from a customer specializing in SiC device design for the development of a 1200 V MOSFET product. The device will be used in industrial equipment applications where thermal efficiency management is critical. After prototype evaluation and reliability testing, mass production is expected to begin in the first half of 2027.
The development represents the first major outcome following SK keyfoundry’s acquisition of SK powertech, which specializes in SiC technology. The integration of capabilities from both companies enabled the creation of the new platform.
SK keyfoundry stated that securing a commercial customer order immediately after completing the technology development demonstrates the maturity and competitiveness of the platform and signals readiness for commercialization in the growing compound semiconductor market. CEO Derek D. Lee said the company plans to expand its high-voltage power semiconductor offerings to meet increasing demand from global customers.
Original – SK keyfoundry
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Danfoss has acquired the remaining shares in Semikron Danfoss, increasing its ownership from 62% to 100% and turning the former joint venture into a fully owned subsidiary.
The move supports Danfoss’ electrification strategy under its LEAP 2030 plan, which prioritizes investment in high-value growth areas such as advanced power electronics and industrial-scale electrification technologies.
With full ownership, Danfoss gains greater strategic control over Semikron Danfoss and aims to accelerate investments in technology leadership, advanced power modules, and large-scale power electronics systems. The company expects the transition from a joint venture structure to full ownership to strengthen its ability to serve key markets including industrial drives, renewable energy systems, data centers, energy storage, off-highway equipment, construction machinery, and commercial vehicles.
Danfoss stated that the ownership change will not affect day-to-day operations. Semikron Danfoss will continue operating with the same teams and leadership structure while maintaining its focus on delivering power semiconductor modules and power electronics solutions to global customers.
Semikron and Danfoss originally merged their power module businesses in March 2022 to create Semikron Danfoss, combining expertise in power semiconductors and industrial power electronics. Since the merger, Danfoss has continued investing in the company’s technology and manufacturing capabilities.
As part of the strategic realignment, Danfoss also announced plans to divest the Semikron Danfoss business focused on power modules for electric passenger cars. The company considers this segment non-core and intends to concentrate on industrial electrification markets and broader energy transition applications.
Original – Danfoss
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Wolfspeed announced the commercial availability of the industry’s first 10 kV silicon carbide power MOSFET, a development aimed at advancing high-voltage power conversion for grid infrastructure, industrial electrification, and AI data center applications.
The new device introduces silicon carbide capability at the 10 kV level, enabling new system architectures for high-voltage power electronics. According to the company, the technology supports improvements in system efficiency, reliability, and design flexibility for applications such as solid-state transformers, wind power systems, and medium-voltage uninterruptible power supplies.
The device also demonstrates high durability. Intrinsic time-dependent dielectric breakdown lifetime analysis indicates a projected operating lifetime of approximately 158,000 years at a continuous 20 V gate bias voltage. Wolfspeed stated that the technology also addresses bipolar degradation challenges that have historically affected 10 kV SiC MOSFETs, enabling reliable body diode operation required in many high-power systems.
The availability of 10 kV silicon carbide devices allows designers to simplify system architectures and reduce component counts. According to Wolfspeed, systems using the technology can reduce overall system cost by about 30% by enabling simpler inverter topologies and fewer power conversion stages. Power density improvements exceeding 300% are possible through higher switching frequencies, increasing from about 600 Hz to 10,000 Hz, which allows smaller magnetics and simplified gate drive and control circuits. The technology can also reduce system-level thermal requirements by up to 50% due to conversion efficiencies approaching 99%.
The fast switching capability of the device, with rise times below 10 nanoseconds, also enables solid-state switching solutions to replace conventional mechanical spark-gap switches in pulsed-power systems. These solid-state devices eliminate arcing, improve timing precision, and reduce maintenance requirements. Potential applications include geothermal power systems, semiconductor plasma etching, pulsed power for AI data centers, and sustainable fertilizer production.
The device, designated CPM3-10000-0300A, is currently available as a bare die for customer sampling and qualification. Wolfspeed stated that the commercialization of the 10 kV SiC MOSFET builds on nearly three decades of development in crystal growth, epitaxy, and high-voltage device manufacturing and enables customers to move prototype designs at this voltage level into production.
Original – Wolfspeed
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Novel Crystal Technology, Inc. will begin shipping 150 mm (6-inch) β-Ga₂O₃ (gallium oxide) substrate samples in March 2026. The company said the milestone represents a key step toward large-scale industrial adoption of next-generation high-voltage power devices.
β-Ga₂O₃ features a bandgap energy exceeding that of silicon carbide (SiC) and gallium nitride (GaN), enabling higher breakdown voltage, lower energy loss and greater device miniaturization. The substrates are produced using a melt growth method, which the company said offers a combination of high performance and scalability suited to applications such as railways, industrial systems and electric power infrastructure.
Global demand for high-voltage, high-power devices is rising due to electrification across industrial and transportation sectors and the expansion of AI data centers. While β-Ga₂O₃ wafers have previously been limited to 100 mm (4-inch) R&D use, transitioning to 150 mm aligns the material with standard production lines. Novel Crystal Technology said this shift will support ecosystem development and pave the way for mass production of 150 mm β-Ga₂O₃ epi-wafers targeted for 2029.
Key Product Features
- EFG Growth Technology: The company leverages experience with the EFG method used for 100 mm β-Ga₂O₃ substrates to ensure quality and supply stability at 150 mm.
- Industry-Standard Compatibility: The 150 mm diameter matches existing power device production lines, supporting commercialization efforts.
- Development Enablement: Early supply of high-quality monocrystalline substrates allows partners to advance epitaxial growth and device process development ahead of large-scale production.
To improve cost competitiveness, the company is developing its DG Method, a growth technology designed to eliminate the need for expensive precious-metal crucibles. Novel Crystal Technology said this approach is expected to enable pricing that surpasses SiC in cost competitiveness.
Strategic Timeline:
- 2027: Launch of 150 mm β-Ga₂O₃ epi-wafer samples
- 2029: Full-scale mass production of 150 mm β-Ga₂O₃ epi-wafers using the DG Method
- 2035: Targeted supply of 200 mm (8-inch) β-Ga₂O₃ substrates
Original – Novel Crystal Technology
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Infineon Technologies AG has expanded its CoolGaN™ portfolio with the new CoolGaN Drive HB 600 V G5 product family. The four new devices – IGI60L1111B1M, IGI60L1414B1M, IGI60L2727B1M and IGI60L5050B1M – integrate two 600 V GaN switches in a half-bridge configuration along with high- and low-side gate drivers and a bootstrap diode in a single package.
By combining key power stage functions into one thermally optimized solution, the new family reduces external component count, simplifies PCB layout challenges typically associated with fast-switching GaN devices and helps shorten development cycles. Infineon said the integrated approach allows designers to realize GaN’s core advantages, including higher switching frequencies, lower switching and conduction losses and greater power density.
Johannes Schoiswohl, Head of the GaN Business Line at Infineon, said the new solutions combine high-speed GaN performance with enhanced integration and robustness, helping designers shrink systems and improve efficiency in compact power electronics.
The CoolGaN Drive HB 600 V G5 devices target low-power motor drives and switched-mode power supplies. The integrated half-bridge architecture enables smaller magnetics and passive components, improved efficiency across operating conditions and enhanced dynamic performance in space-constrained designs.
The devices are engineered for high-speed precision, offering a 98 ns propagation delay with minimal mismatch to support efficient high-frequency operation and predictable timing. For simplified integration, the products feature PWM inputs compatible with standard logic levels and operate from a single 12 V gate driver supply. Fast under-voltage lockout (UVLO) recovery supports reliable start-up and transient performance.
For thermal optimization, the devices are housed in a 6 mm × 8 mm TFLGA-27 package with exposed pads, enabling efficient heat spreading and supporting heatsink-less designs in many applications.
Infineon said the new CoolGaN Drive HB 600 V G5 family strengthens its position in the GaN market by combining proven CoolGaN device technology with system-level integration and deep power conversion expertise, enabling customers to more easily adopt and scale high-efficiency GaN-based designs across industrial and consumer platforms.
Original – Infineon Technologies
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ROHM Co., Ltd. has announced plans to integrate its proprietary GaN power device development and manufacturing technologies with process technology from TSMC, establishing an end-to-end GaN production system within the ROHM Group.
Under a newly signed license agreement, TSMC’s GaN process technology will be transferred to ROHM’s Hamamatsu facility, enabling the company to strengthen its supply capabilities in response to rapidly growing demand for GaN in applications such as AI servers and electric vehicles (EVs).
Gallium nitride (GaN) power devices offer superior high-voltage and high-frequency performance, enabling higher efficiency and reduced system size. While already widely adopted in consumer applications such as AC adapters, GaN is increasingly being used in high-voltage systems including:
- Power units for AI servers
- On-board chargers (OBCs) for EVs
Demand in these segments is expected to accelerate further as electrification and AI infrastructure continue to expand.
ROHM has been active in GaN development for years. The company established mass production of 150V GaN devices at ROHM Hamamatsu in March 2022. In the mid-power range, ROHM strengthened its supply structure through external collaborations — with TSMC as a key partner.
Key milestones in the collaboration include:
- Adoption of a 650V GaN process from TSMC beginning in 2023
- A December 2024 partnership agreement focused on automotive GaN
The newly announced technology integration represents a deeper evolution of this collaboration.
ROHM aims to complete the technology transfer and establish the new production system in 2027, positioning the company to meet expanding demand in AI server and automotive applications.
Upon completion of the transfer, ROHM and TSMC will amicably conclude their automotive GaN partnership. However, both companies stated they will continue working together to advance higher-efficiency and more compact power supply systems.
By bringing GaN production capabilities fully in-house while leveraging TSMC’s advanced process technology, ROHM is strengthening its long-term competitiveness in next-generation power semiconductors.
Original – ROHM
