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DB HiTek has completed reliability qualification of its 200mm (8-inch) wafer-based 1,200V SiC MOSFET process and is preparing to begin mass production in 2027. The company said it has established a complete 200mm SiC foundry process covering device design, manufacturing, electrical characterization and reliability verification.
The company is developing its SiC foundry services for power semiconductor applications including electric vehicles, renewable energy systems and industrial power equipment. While 150mm wafers currently account for the majority of SiC production, DB HiTek is developing its platform around 200mm wafers to support higher manufacturing efficiency and lower production costs.
DB HiTek has developed first- and second-generation 1,200V SiC MOSFET process design kits (PDKs), which are being provided to foundry customers. A third-generation PDK is scheduled for release in November 2026. According to the company, use of the PDKs could reduce customers’ product development cycles by more than one year by simplifying initial device development and accelerating prototype production.
The second-generation process achieves a specific on-resistance (Rsp) of 2.5mΩ·cm² or lower at a gate voltage of 18V, together with a threshold voltage (Vth) of at least 3V. DB HiTek has also completed reliability qualification for this process.
The third-generation process, scheduled to be released after qualification in November, targets an Rsp of 2.3mΩ·cm² or lower at the same 18V gate voltage. It is also being developed to achieve a short-circuit withstand time (SCWT) of at least 2.5µs within the short-circuit safe operating area (SCSOA).
DB HiTek said it has established what it describes as the world’s first complete 200mm 1,200V SiC foundry process. The platform is designed to provide customers with an integrated foundry service spanning device design support through fabrication, characterization and reliability testing.
The company plans to complete process preparations and initially make the technology available to existing foundry customers with which it has maintained multi-year collaborations during the third quarter of 2026. DB HiTek expects to open the 200mm SiC foundry service to all customers beginning in the second quarter of 2027, with volume production targeted for 2027.
Original – DB HiTek
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Infineon Technologies and Skeleton Technologies have signed a Memorandum of Understanding to collaborate on high-efficiency and resilient power solutions for AI data centers, with a focus on solid-state transformers, high-power sidecars and energy storage.
Under the agreement, the companies will jointly explore advanced architectures covering the AI data center power chain from grid to processor core. The collaboration will combine Infineon’s power semiconductor technologies with Skeleton’s supercapacitor and power conversion capabilities.
One area of development will be next-generation solid-state transformers for converting medium-voltage AC power into high-voltage DC. The companies plan to combine Infineon’s high-voltage CoolSiC silicon carbide power semiconductors with Skeleton’s power conversion systems and supercapacitor technology.
Infineon and Skeleton are also collaborating on GaN-based peak-shaving systems. These solutions will combine Skeleton’s supercapacitors with Infineon’s CoolGaN power semiconductors to manage rapid changes in data center power demand.
The collaboration is intended to address increasing power density in AI data centers, where growing numbers of high-performance GPUs are placing greater demands on power conversion, distribution and storage systems. Solid-state transformers and high-power sidecars are being developed to support more efficient power delivery while increasing system resilience.
Infineon will contribute its expertise in high-efficiency power conversion and control, while Skeleton will provide technologies for storing and rapidly delivering high levels of power. The companies will focus on increasing power density without expanding the physical footprint occupied by data center power infrastructure.
The companies said the joint development work will target improvements in energy efficiency, power density and system reliability while reducing total cost of ownership for data center operators.
Original – Infineon Technologies
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Nexperia and Aurobay Technologies, a division of Horse Powertrain, are exploring a strategic collaboration focused on advanced GaN and SiC power semiconductor solutions for automotive applications.
The companies plan to combine Nexperia’s wide-bandgap semiconductor technologies with Aurobay Technologies’ powertrain system design and integration capabilities. The evaluation will focus on how closer cooperation between semiconductor development and system integration could support future electrified and hybrid vehicle platforms.
The initiative builds on an existing collaboration in which Nexperia’s GaN devices were deployed in Aurobay Technologies’ highly integrated power generation system for range-extender applications. According to the companies, the project demonstrated improvements in efficiency, system size and weight while operating in demanding automotive environments.
Nexperia and Aurobay Technologies will now assess opportunities to optimize power electronics architectures for applications including traction inverters and power generation systems. The work is expected to include early-stage co-design and system-level optimization of power semiconductor technologies and powertrain electronics.
The collaboration will evaluate both GaN and SiC technologies as the companies seek higher efficiency, increased power density and more compact powertrain architectures. The work will also examine how semiconductor characteristics can be optimized around specific vehicle-level and powertrain requirements.
Nexperia’s Head of Business Group Wide-Bandgap, IGBTs and Modules, Edoardo Merli, said closer cooperation with Aurobay Technologies will allow the company to better understand system-level requirements and evaluate the vehicle-level benefits of GaN and SiC technologies.
Aurobay Technologies said its previous integration of Nexperia’s GaN devices demonstrated the potential of closer cooperation between semiconductor suppliers and powertrain developers. The companies will use the expanded collaboration to evaluate further improvements in efficiency, performance and packaging for future electrified propulsion systems.
Original – Nexperia
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Infineon Technologies is supplying 1200V CoolSiC MOSFETs to Fox ESS for use in residential energy storage systems, with the SiC devices reducing switching losses by 70% and improving inverter and battery conversion efficiency.
Fox ESS is using Infineon’s CoolSiC MOSFET 1200V G2 devices in the top-side-cooled Q-DPAK package. In the company’s PQ3-Ultra energy storage system, the devices contribute to peak photovoltaic inverter efficiency of up to 98.78% during grid-tied operation and peak battery charge/discharge efficiency of up to 98.47%.
The CoolSiC devices combine Infineon’s trench-gate SiC architecture with its .XT interconnection technology. The design is intended to reduce switching losses, thermal resistance and operating junction temperature while supporting higher system power density.
The Q-DPAK package uses top-side cooling rather than a conventional bottom-side-cooled configuration. According to Infineon, this enables improved PCB layouts that can reduce parasitic effects and stray inductance while providing more effective thermal management. The compact package is also compatible with automated assembly for high-volume manufacturing.
Fox ESS has also reported a System Performance Index (SPI) of 97.0% for its hybrid energy storage system combining the PQ-H3-Ultra-10.0 inverter with the EQ3300-5 battery. The result was recorded in testing by HTW Berlin University of Applied Sciences and AQUU Research.
The 97.0% SPI placed Fox ESS first in the 10kW category among hybrid inverter and storage systems tested in 2026. According to the company, it is also the highest SPI result recorded since the evaluation began in 2018.
Fox ESS said it has installed more than 890,000 photovoltaic inverters and over 1 million batteries across more than 70 countries during the past three years.
Original – Infineon Technologies
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Coherent has begun sampling 300mm high-thermal-conductivity silicon carbide (SiC) substrates to leading AI semiconductor partners, moving the technology from internal development into customer evaluation for AI and high-performance computing applications.
The substrates are designed to address increasing thermal-management requirements as AI processors move toward higher power densities. Coherent is targeting the material for next-generation heat spreaders and related semiconductor packaging applications where heat removal can affect processor performance, reliability and data center efficiency.
According to Coherent, its high-thermal-conductivity SiC substrates can improve heat spreading by up to 25% compared with current solutions while maintaining compatibility with existing semiconductor manufacturing platforms.
SiC combines high thermal conductivity with mechanical strength and thermal stability, characteristics that make it suitable for thermal-management applications around high-power semiconductor devices. In this application, the material is being positioned primarily as a thermal-management substrate rather than as an active power semiconductor.
Coherent has vertically integrated capabilities covering SiC crystal growth, wafering, polishing and characterization. The company said this provides greater control across the manufacturing process and supports its plans to scale the 300mm platform toward future high-volume production.
Customer sampling represents the next stage of Coherent’s 300mm SiC development roadmap. The company plans to continue expanding the platform for AI and HPC applications as semiconductor manufacturers evaluate new materials for managing the increasing heat generated by next-generation processors.
Original – Coherent
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Micro Commercial Components (MCC) has introduced the SICW30120DG5M-BP, a new 1200V, 30A silicon carbide (SiC) Schottky Barrier Diode designed for high-voltage and high-frequency power conversion systems.
The device combines a 1200V reverse voltage rating with a 30A average forward current capability, targeting applications where higher switching frequencies, efficiency and power density are key design requirements. It is supplied in an industry-standard TO-247AB through-hole package, supporting effective heat dissipation and straightforward heatsink integration.
Based on Merged PiN Schottky (MPS) SiC technology, the SICW30120DG5M-BP offers zero reverse recovery current. Eliminating reverse recovery losses can reduce switching losses and EMI, making the device particularly suitable for high-frequency converter architectures where conventional silicon rectifiers can impose significant recovery-related losses.
The diode has a maximum forward voltage of 1.6V, helping limit conduction losses, while its 180A surge current capability provides additional robustness against inrush currents and transient overload conditions. The MPS architecture combines the switching characteristics of a Schottky diode with enhanced surge-current capability.
The SICW30120DG5M-BP supports a maximum junction temperature of 175°C, allowing operation in thermally demanding power systems and potentially reducing cooling requirements. Its combination of high blocking voltage, zero reverse recovery and high-temperature capability is particularly relevant for next-generation high-power conversion equipment.
Target applications include switched-mode power supplies, power factor correction circuits, EV charging infrastructure, motor drives, renewable energy systems and industrial power conversion equipment.
The introduction expands MCC’s SiC power semiconductor portfolio into higher-voltage and higher-current applications, addressing growing demand for SiC rectifiers as designers move toward faster-switching, more efficient and increasingly power-dense converter architectures.
Original – Micro Commercial Components
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Wolfspeed and LITEON Technology have formed a strategic partnership following the successful qualification of Wolfspeed’s silicon carbide technology for LITEON’s 800VDC power sidecar and compute-rack power supply unit platforms. The systems are being developed for next-generation AI data centers serving leading hyperscale customers, with potential adoption across additional cloud service provider platforms.
The collaboration represents another significant commercial entry point for SiC beyond its established automotive and industrial markets. Rapidly increasing AI compute power requirements are pushing data center operators toward 800VDC architectures, where higher distribution voltages can improve efficiency, increase power density and support the scaling of increasingly power-intensive AI racks.
LITEON will use Wolfspeed SiC MOSFETs within these architectures to improve power-conversion efficiency across a broad operating range. According to the companies, the technology can also reduce bill-of-material costs and simplify component procurement, making SiC attractive not only from an efficiency perspective but also at the overall system level.
A strategically important element of the partnership is Wolfspeed’s 200mm SiC manufacturing platform. LITEON plans to leverage this manufacturing capability as it develops power systems intended for hyperscale deployments, where semiconductor availability, manufacturing scale and supply-chain reliability become increasingly important as deployments move from qualification into volume production.
The qualification provides Wolfspeed with direct exposure to the emerging 800VDC AI data center power ecosystem. While no revenue, volume or deployment timetable was disclosed, successful qualification for LITEON’s power sidecar and compute-rack PSU platforms creates the potential for Wolfspeed devices to scale alongside future hyperscale and CSP deployments.
For LITEON, the partnership strengthens its ability to offer high-efficiency and high-reliability power infrastructure as AI data centers transition toward higher-voltage DC distribution. Wolfspeed CEO Robert Feurle highlighted the combination of advanced SiC technology and scalable supply capacity, while LITEON said the integration strengthens the performance, efficiency and reliability of its next-generation AI infrastructure platforms.
From a power semiconductor market perspective, the announcement is another indication that AI infrastructure is developing into an important incremental demand driver for SiC. Historically dominated by EV traction inverters, renewable energy and industrial applications, SiC is increasingly being positioned in high-power AI data center PSUs, BBUs and 800VDC distribution architectures. If hyperscale adoption accelerates, this could broaden the SiC demand base and create a meaningful new growth market for high-voltage SiC MOSFET suppliers such as Wolfspeed.
Original – Wolfspeed
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Para Light Electronics has launched its ThermaFlat I and ThermaFlat II silicon carbide MOSFET families, targeting a key thermal challenge in high-power conversion: the increase in MOSFET on-resistance as junction temperature rises. The portfolio targets AI and data-center power supplies, battery backup and UPS systems, EV charging, energy storage, photovoltaic inverters, variable-frequency drives and other industrial power applications.
The central feature of the new platform is what Para Light calls Ultra-Low RDS(on) Drift technology. Conventional SiC MOSFETs experience increasing on-resistance at elevated junction temperatures, which raises conduction losses and can increase cooling requirements. ThermaFlat is designed to keep on-resistance comparatively stable across a broad operating-temperature range, with the objective of improving full-load efficiency and simplifying thermal design.
In benchmark testing cited by Para Light, its 650V, 21 mΩ TO-247 device showed only approximately 8% RDS(on) variation as junction temperature increased from -25°C to +125°C. The company says this is significantly lower than the temperature coefficients of conventional SiC devices. Para Light also states that its 1200V ThermaFlat family exhibits similarly low temperature coefficients for high-power conversion architectures.
Broad portfolio spans 650V, 1200V and 1700V devices. The 650V lineup includes devices with RDS(on) ratings ranging from 8 mΩ to 36 mΩ, while the 1200V portfolio ranges from 10 mΩ to 35 mΩ. A 1700V includes a16 mΩ device. Package options include TO-247-3L, TO-247-4L, TOLL-8L and Q-DPAK, with several products incorporating Kelvin-source connections.
Para Light has divided the platform into two architectures. ThermaFlat I covers 650V and 1200V devices in industry-standard packages and is positioned for mainstream converter topologies. ThermaFlat II combines the low RDS(on) drift characteristic with a higher gate-threshold-voltage architecture intended to improve noise immunity and reduce false turn-on. According to Para Light, ThermaFlat II can operate without requiring a negative gate-off supply, potentially simplifying gate-driver circuitry, reducing component count and lowering system cost.
The company identifies AI data-center power supplies as one of the principal target markets. Other applications include battery backup units, UPS systems, EV charging stations, grid-connected energy-storage charging and discharging systems, photovoltaic inverters, variable-frequency drives and industrial automation. Para Light says it is continuing to expand the portfolio with additional voltage, current and package configurations.
Para Light is also positioning manufacturing and supply-chain capabilities as part of the offering. The company highlights wafer yields, dedicated in-house packaging and process controls, along with vertical integration covering device design, packaging and supply-chain management. It also cites strategic production planning and safety-inventory frameworks as measures intended to improve supply resilience for international customers.
Original – Para Light Electronics
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Navitas Semiconductor and Magnachip Semiconductor have announced a strategic partnership to accelerate the adoption of silicon carbide (SiC) technologies in high-voltage (HV) and ultra-high-voltage (UHV) power applications. Under the agreement, Magnachip will license Navitas’ GeneSiC™ Trench-Assisted Planar (TAP) technology to expand its power semiconductor portfolio into the SiC market.
The licensing agreement covers GeneSiC technologies with voltage ratings of 1200 V, 2300 V, 3300 V, and higher, enabling Magnachip to develop SiC devices for next-generation high-power conversion systems.
As part of the collaboration, Magnachip will also gain access to Navitas’ established SiC supply chain and materials ecosystem to support faster product development and market entry. The companies plan to transfer, qualify, and internalize the licensed technology at Magnachip’s manufacturing facility in South Korea while maintaining compatibility with Navitas’ existing technology platform.
The partnership targets a broad range of high-power applications, including:
- Energy transmission and grid infrastructure
- Battery energy storage systems (BESS)
- Industrial electrification
- Automotive power systems
- High-voltage power conversion
- Ultra-high-voltage power electronics
The companies stated that the agreement extends beyond the current SiC licensing arrangement, with additional areas of collaboration expected to be announced in the future.
For Navitas, the partnership expands the reach of its GeneSiC technology into the high-voltage power semiconductor market through licensing and technology collaboration. For Magnachip, the agreement provides a pathway into the rapidly growing SiC market, complementing its existing MOSFET and power semiconductor portfolio while enabling the development of higher-voltage, higher-efficiency power conversion solutions.
Original – Magnachip Semiconductor
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Micro Commercial Components (MCC) has expanded its silicon carbide portfolio with the introduction of the SICX0165G4JQ-TP, a 650 V, 1 A Silicon Carbide (SiC) Schottky Barrier Diode qualified to the AEC-Q101 automotive reliability standard. The device is designed for high-voltage automotive and industrial power conversion applications requiring high switching efficiency, compact size, and robust thermal performance.
The SICX0165G4JQ-TP combines a 650 V reverse voltage rating with a 1 A average forward current in a compact SMA package. Built using silicon carbide technology, the diode features zero reverse recovery current, eliminating reverse recovery losses to reduce switching losses and electromagnetic interference (EMI) while improving overall power conversion efficiency.
The device also offers a maximum forward voltage of 1.3 V to minimize conduction losses and an 18 A surge current capability to withstand inrush currents and transient overload conditions. Its positive temperature coefficient improves current sharing during parallel operation, while a maximum junction temperature of 175°C enables reliable operation in harsh environments with reduced cooling requirements.
The diode is targeted at a range of high-voltage power applications, including switching mode power supplies (SMPS), power factor correction (PFC) circuits, automotive auxiliary power supplies, EV charging systems, motor drives, and solar inverters.
Key specifications include a 650 V reverse voltage rating, 1 A average forward current, AEC-Q101 qualification, zero reverse recovery current, 1.3 V maximum forward voltage, 18 A surge current capability, 175°C maximum junction temperature, positive temperature coefficient, SMA package, and RoHS compliance.
Original – Micro Commercial Components
