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USI has unveiled a new advanced power semiconductor packaging technology platform that embeds silicon carbide (SiC) dies into multilayer ABF substrates while integrating ceramic insulation and wire-bondless architectures into industry-standard power module packages.
The new technology combines SiC chip embedding with Single-Side Copper Exposed (SSC) packaging to deliver lower stray inductance, reduced conduction resistance, and improved thermal performance. By integrating ceramic substrate insulation directly into the package structure, USI eliminates the need for additional isolation components while maintaining electrical reliability and compact form factors.
A key innovation is the adoption of a wire-bondless architecture, which improves current handling and thermal dissipation while enabling larger die integration within slimmer package footprints. Compared with traditional wire-bonded module designs, the approach reduces conduction losses, lowers heat generation, and enhances long-term reliability — all critical requirements for high-power-density applications such as AI data centers, electric vehicles, and humanoid robotics.
USI is positioning itself beyond traditional EMS manufacturing by expanding into higher-value power module integration and advanced packaging services. The company also emphasized its broader automotive powertrain capabilities, including 400 V/800 V inverter systems, intelligent battery disconnect units (iBDUs), and integrated OBC/DC-DC solutions.
The technology aligns with broader industry trends toward highly integrated, thermally optimized power systems for electrification and AI infrastructure. USI plans to showcase the new packaging platform and related power solutions at PCIM Europe 2026.
Original – USI
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Microchip Technology has introduced new 3.3 kV HV-D3 mSiC® power modules aimed at accelerating adoption of solid-state transformer (SST) architectures in AI hyperscale data centers and other high-voltage power applications.
The modules integrate 3.3 kV silicon carbide (SiC) MOSFETs and Schottky diodes in an industry-standard 62 mm package, enabling more direct conversion from medium-voltage grid infrastructure to server rack power systems. The launch reflects growing industry interest in reducing power-conversion stages as AI compute clusters continue to push power requirements into multi-megawatt territory.
The HV-D3 modules are built around Microchip’s mSiC technology and incorporate features designed for high-voltage operation, including 6 kV isolation capability, CTI 600-rated materials, extended creepage distances, and a silicon nitride (Si₃N₄) substrate for improved thermal performance and power-cycling reliability. The higher voltage rating enables designers to reduce the number of series-connected devices by roughly half compared with lower-voltage SiC alternatives when interfacing with 13.8 kV and 34.5 kV grid systems.
The product family targets the 100–300 A range, a segment positioned between discrete SiC devices and larger power modules. Available configurations include half-bridge and common-source topologies, with optional anti-parallel Schottky diodes, supporting both hard-switching and soft-switching applications.
Beyond AI infrastructure, the modules address multiple high-power markets including megawatt EV charging systems, medium-voltage motor drives, rail and heavy transportation, and industrial and defense power systems.
Original – Microchip Technology
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LATEST NEWS / PRODUCT & TECHNOLOGY / SiC / TOP STORIES / WBGWolfspeed Launches New 3.3 kV SiC Power Module Families for AI Infrastructure and Grid Modernization
May 21, 2026
2 Min ReadWolfspeed has introduced two new 3.3 kV silicon carbide power module families aimed at addressing rising power conversion demands driven by AI data centers, renewable energy systems, and broader electrification trends.
The launch includes a high-power half-bridge baseplate module for applications exceeding 800 A, as well as a scalable full-bridge baseplate-less module under the WolfPACK® platform. Both are designed around industry-standard footprints and target next-generation medium-voltage power architectures.
The baseplate module is optimized for high-power applications such as solar inverters, wind energy systems, and grid-scale storage, while the WolfPACK® family is focused on modular solid-state transformer (SST) architectures and renewable energy infrastructure. The flexibility of the baseplate-less approach enables series-stacked and multi-level converter configurations, supporting scalable high-voltage systems.
Technically, both module families are designed for continuous 24/7 operation in 2 kV+ DC-link environments. They incorporate advanced packaging technologies such as sintered die attach, improved encapsulation materials, and enhanced cosmic ray robustness to improve reliability and power cycling performance.
From a performance perspective, the new baseplate module reportedly delivers up to 42% lower switching losses compared to competing SiC solutions and more than 90% lower losses compared to traditional IGBT systems under comparable operating conditions. The WolfPACK® architecture also enables significant reductions in system footprint, supporting more compact solid-state transformer designs.
Original – Wolfspeed
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Toshiba Electronics Europe GmbH has begun test-sample shipments of its new TW007D120E, a 1200 V trench-gate silicon carbide MOSFET targeting high-efficiency power systems for AI data centers and other high-power infrastructure applications.
The device is packaged in a top-side cooled QDPAK format, enabling improved thermal dissipation and higher power density—critical requirements for next-generation AI server power supplies and emerging 800 V HVDC data center architectures. In addition to AI infrastructure, the MOSFET is also positioned for renewable energy systems, UPS equipment, EV charging stations, and energy storage applications.
Technically, the TW007D120E utilizes Toshiba’s proprietary trench-gate SiC structure to significantly improve on-resistance per unit area. The device achieves a typical RDS(on) of 7.0 mΩ with 172 A drain current capability and 33 nC gate-drain charge. Compared with Toshiba’s previous-generation 1200 V SiC MOSFET, the new product reduces specific on-resistance by approximately 58% and improves the key switching/conduction loss figure-of-merit by around 52%.
The device also supports lower gate drive voltages between 15 V and 18 V, helping reduce system complexity and power losses while improving overall efficiency.
Original – Toshiba
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NoMIS Power Corporation has joined a three-year, $2.5 million U.S. Department of Energy ARPA-E DC-GRIDS program led by Michigan State University to develop next-generation high-voltage SiC-based modular converter technology for multi-terminal HVDC (MT-HVDC) systems.
The project focuses on creating Neutral Point Clamped Power Electronics Building Blocks (NPC-PEBBs) — standardized, vendor-agnostic submodules designed for scalable HVDC converter architectures used in grid modernization, AI data center power delivery, offshore wind integration, and long-distance transmission infrastructure.
At the core of the initiative is NoMIS Power’s expanding 3.3 kV SiC MOSFET portfolio, including its existing 80 mΩ device and upcoming 50 mΩ and 25 mΩ variants. The future 25 mΩ 3.3 kV MOSFET is particularly important for HVDC valve applications, where lower on-resistance directly improves efficiency, reduces conduction losses, and increases thermal headroom in high-current converter systems.
The consortium also includes Electric Power Research Institute, GE Grid Solutions, National Renewable Energy Laboratory, OPAL-RT Technologies, Salt River Project, and Minnesota Power.
The project reflects growing momentum behind solid-state HVDC infrastructure as electricity demand accelerates due to AI data centers, electrification, and renewable energy deployment. Compared with conventional silicon IGBT-based converter submodules, the SiC NPC-PEBB architecture promises higher voltage capability, full DC fault blocking, smaller capacitor requirements, and improved efficiency and power density.
Original – NoMIS Power
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Infineon Technologies AG has expanded its XHP™ 2 power module portfolio with new 2300 V CoolSiC™ MOSFET variants, targeting next-generation high-voltage renewable energy and energy storage systems.
The new silicon carbide modules are designed to support DC-link voltages up to 1500 V, aligning with the industry shift toward higher-voltage architectures aimed at improving efficiency and reducing system complexity. The modules are offered with RDS(on) values ranging from 1 mΩ to 2 mΩ and isolation voltages of either 4 kV or 6 kV, enabling flexibility across various high-power applications.
By leveraging SiC technology, the modules significantly reduce switching and conduction losses compared to conventional silicon solutions. This enables higher inverter efficiency, increased power density, and operation at higher switching frequencies, which can reduce harmonic distortion and shrink overall system size.
The devices are packaged in Infineon’s XHP 2 platform, featuring symmetrical switching characteristics that simplify paralleling in large power converters. The modules also integrate Infineon’s .XT interconnection technology to improve reliability and extend operational lifetime. Optional pre-applied thermal interface material further simplifies assembly and enhances thermal consistency.
Infineon highlighted measurable system-level performance improvements, including power densities reaching 300 kW/L in wind power demonstrations and semiconductor losses below 0.7% of output power in battery storage applications.
From a market perspective, the launch reflects accelerating demand for higher-voltage, high-efficiency power conversion in renewable energy infrastructure, utility-scale battery storage, and grid modernization projects. As system voltages continue rising to improve energy transmission efficiency, 2300 V SiC devices are emerging as a key enabling technology.
Strategically, Infineon is strengthening its position in the rapidly growing high-voltage SiC market, where scalability, efficiency, and reliability are becoming critical differentiators for renewable energy and industrial power systems.
Original – Infineon Technologies
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onsemi and Geely Auto Group have expanded their strategic collaboration to accelerate next-generation electric vehicle development, with a focus on high-voltage architectures and system-level integration.
The partnership centers on deeper adoption of onsemi’s EliteSiC technology across Geely’s SEA-S (Sustainable Experience Architecture – Super Hybrid) platform. These silicon carbide solutions enable the transition to 900V EV architectures, delivering higher efficiency, improved power density, and enhanced thermal performance.
From a system perspective, the move to 900V platforms represents a significant step forward in EV design. Higher voltage allows more efficient power transfer with reduced losses, translating into faster charging times, extended driving range, and more consistent performance under demanding conditions. onsemi’s SiC devices play a key role by supporting high-voltage operation with improved efficiency and reliability.
The collaboration also reflects a broader industry shift toward earlier and deeper semiconductor involvement in vehicle design. By working at the platform level, onsemi and Geely can optimize system architecture, accelerating development cycles and improving overall vehicle performance.
Strategically, this partnership strengthens onsemi’s position in the fast-growing SiC automotive market, while enabling Geely to enhance competitiveness in next-generation EV platforms. The integration of EliteSiC into Geely’s electric drive systems supports key performance improvements, including higher acceleration, reduced charging time, and better energy efficiency.
From a market standpoint, the announcement highlights the accelerating transition toward 800V–1000V EV architectures, a critical trend as automakers seek to meet increasing performance expectations and charging infrastructure demands. It also underscores the growing importance of close collaboration between semiconductor suppliers and OEMs in shaping future vehicle platforms.
Original – onsemi
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onsemi has expanded its long-term collaboration with NIO Inc. to support the transition to next-generation 900 V electric vehicle architectures, leveraging its EliteSiC technology.
The partnership builds on an existing multi-year relationship, evolving from earlier 400 V platforms to advanced 900 V systems. onsemi’s EliteSiC enhanced M3e technology will be deployed across NIO’s upcoming vehicle lineup, including flagship models such as the ES9, which will be showcased at the 2026 Beijing Auto Show.
From a technology standpoint, the EliteSiC platform delivers improved switching performance and reduced energy losses, particularly through enhanced body diode characteristics. This translates into higher drivetrain efficiency, better thermal performance, and increased system robustness. End-user benefits include extended driving range, faster charging times enabled by high-voltage architectures, and more consistent vehicle performance under demanding conditions.
Strategically, this collaboration highlights the industry-wide shift toward higher-voltage EV platforms (800 V–1000 V), which are becoming essential for enabling ultra-fast charging and improving overall system efficiency. It also reflects a broader trend of deeper system-level collaboration between automakers and semiconductor suppliers, moving beyond component sourcing toward co-development of powertrain architectures.
From a market perspective, onsemi continues to strengthen its position in the automotive SiC segment, competing with major players such as Infineon, STMicroelectronics, and Wolfspeed. Partnerships like this are critical for securing long-term design wins in EV platforms, where semiconductor content per vehicle is rapidly increasing.
Overall, the expanded agreement reinforces the growing importance of silicon carbide in next-generation EVs and underscores how close OEM–supplier alignment is becoming a key competitive differentiator in the electrification landscape.
Original – onsemi
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CVD Equipment Corporation announced the successful growth of high-quality single-crystal silicon carbide (SiC) boules using its Physical Vapor Transport (PVT) systems, with validation performed by Stony Brook University under the onsemi Research Center for Wide Bandgap Materials.
The produced SiC boule demonstrated a 4H crystal structure with low defect density and no polytype inclusions, confirming material quality suitable for advanced power semiconductor applications. The result validates CVDE’s PVT equipment capability in supporting next-generation SiC substrate manufacturing.
This collaboration underscores the importance of academic–industry partnerships in advancing wide bandgap materials and highlights CVDE’s positioning within the SiC equipment ecosystem. As demand for high-performance SiC substrates accelerates across EVs, industrial power, and AI data center infrastructure, scalable and high-yield crystal growth remains a critical bottleneck in the supply chain.
The achievement strengthens CVDE’s role as an enabling technology provider in the SiC value chain, with potential implications for future equipment demand as the industry continues to expand material capacity.
Original – CVD Equipment
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ROHM Co., Ltd. has developed its 5th-generation EcoSiC™ MOSFETs, targeting improved efficiency and performance in high-power applications such as electric vehicles, AI data centers, and industrial power systems.
The new generation delivers a significant performance improvement over previous devices, with approximately 30% lower ON-resistance at high temperatures (175°C) compared to 4th-generation SiC MOSFETs under similar conditions. This reduction directly translates into lower conduction losses, enabling higher efficiency, increased power density, and more compact system designs—particularly critical for traction inverters and high-performance power supplies.
The technology is positioned to address two major market drivers. In automotive, it supports longer EV driving range and faster charging through more efficient inverters and onboard chargers. In parallel, the rapid expansion of AI infrastructure and data centers is increasing power density requirements, making efficient power conversion a key bottleneck for system scalability.
ROHM has a long-standing position in SiC, having started mass production as early as 2010. Its 4th-generation devices have already seen broad adoption across automotive and industrial markets. The 5th-generation platform builds on this foundation with structural and process optimizations that enhance high-temperature performance—an increasingly important factor as power systems operate under more demanding conditions.
Commercially, ROHM began offering bare die versions in 2025 and completed development in March 2026. Sampling of discrete devices and modules based on the new generation is scheduled to begin in July 2026, with further expansion planned across voltage classes and packaging options.
From a market perspective, this launch reinforces the transition of silicon carbide into a mainstream power semiconductor technology. As electrification and AI-driven power demand accelerate, improvements in efficiency and thermal performance at the device level are becoming critical enablers for next-generation systems. ROHM’s latest generation strengthens its competitive positioning in the increasingly crowded SiC landscape, where performance gains at high temperature and high power are key differentiators.
Original – ROHM
