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Navitas Semiconductor will present its latest GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power technologies at APEC 2026, booth #2027, in San Antonio, Texas, from March 22–26.
The company will highlight solutions targeting AI data centers, performance computing, grid and energy infrastructure, and industrial electrification.
Navitas will unveil a 10 kW ‘GaN-powered’ 800 V–to–50 V DC-DC platform, designed for next-generation AI data centers.
Key features include:
- Advanced 650 V and 100 V GaNFast FETs
- Three-level half-bridge architecture with synchronous rectification
- 98.5% peak efficiency
- 2.1 kW/in³ power density
- Support for both 800 V and ±400 VDC AI data center architectures
In addition, Navitas will showcase:
- A 12 kW AI data center power supply using IntelliWeave™ digital control
- An 8.5 kW OCP power supply
- A 4.5 kW CRPS power supply
For next-generation solid-state transformer (SST) applications, Navitas will present its SiCPAK™ power module portfolio, designed for high-efficiency (>98%) conversion from medium-voltage grids (13.8 kVAC to 34.5 kVAC) to 800 VDC or 1500 VDC.
The lineup includes:
- 3300 V ultra-high-voltage (UHV) SiC modules
- 2300 V UHV SiC modules
- 1200 V high-voltage solutions
A new gate driver evaluation board for dynamic characterization of UHV SiCPAK™ modules will also be demonstrated.
Navitas will debut ultra-compact:
- 240 W and 300 W GaN-based power solutions for AI-enabled high-performance computing
- 400 W to 1 kW GaN motor control systems for industrial applications
These designs emphasize superior efficiency, compact size, and high power density enabled by the latest GaNFast IC technology.
Navitas executives and engineers will participate in multiple technical sessions:
- March 24 | 8:55–9:20 AM CT | IS01.2
Maximizing MVHV SiC Performance and Reliability
Presenter: Sumit Jadav - March 25 | 11:05–11:30 AM CT | IS07.6
High-Power GaN ICs in 800V AI DC-DC Brick Solutions
Presenter: Llew Vaughan-Edmunds, VP & GM, GaN Business Unit - March 26 | 11:35–11:50 AM CT | IS27.4
Single-stage Power Converter Enabled by GaN Bidirectional Switches
Presenter: Llew Vaughan-Edmunds
With innovations spanning GaN and ultra-high-voltage SiC, Navitas continues to target high-power markets where efficiency, density, and reliability are critical—particularly as AI infrastructure and electrification accelerate globally.
Original – Navitas Semiconductor
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Micro Commercial Components (MCC) has introduced its Gen4 1200V SiC Schottky Diode Series, an automotive-qualified family of silicon carbide (SiC) Schottky Barrier Diodes engineered for high-efficiency, high-voltage power systems operating in demanding environments.
Rated at 1200 V VRRM, the new series features zero reverse recovery current, eliminating reverse recovery losses and significantly improving high-frequency efficiency. Compared with conventional silicon rectifiers, the Gen4 devices reduce switching losses and enable higher switching frequencies, contributing to improved overall power density across automotive, industrial and renewable energy applications.
Built on advanced Gen4 Junction Barrier Schottky (JBS) technology, the diodes deliver fast majority-carrier switching with enhanced leakage control and surge robustness. The devices offer forward voltage as low as 1.38 V at rated current, leakage current down to 0.1 µA at 25 °C, and capacitive charge as low as 10.2 nC (typical). They are specified for operation across a wide junction temperature range of −55 °C to +175 °C.
The series is AEC-Q101 qualified, supporting reliability requirements in automotive and harsh industrial environments. Additional features include high surge capability up to 85 A and a positive temperature coefficient of forward voltage to help prevent thermal runaway.
Available in DPAK and TO-220AC packages, the Gen4 1200V SiC Schottky Diode Series is designed to enable more efficient, compact and durable high-voltage power designs.
Key Features & Benefits:
- Zero reverse recovery current to eliminate reverse recovery losses and improve high-frequency efficiency
- AEC-Q101 qualification for automotive reliability
- 1200 V VRRM rating for high-voltage rectification architectures
- Forward voltage as low as 1.38 V to reduce conduction losses and thermal stress
- Ultra-low leakage current (down to 0.1 µA) for improved high-temperature stability
- High surge capability up to 85 A for demanding load transients
- Capacitive charge as low as 10.2 nC to reduce switching energy loss
- Operating junction temperature range of −55 °C to +175 °C
- Positive temperature coefficient to support thermal stability and prevent runaway
Original – Micro Commercial Components
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Micro Commercial Components (MCC) has introduced its Gen4 SiC Schottky Diode Series, a new family of high-voltage silicon carbide (SiC) Schottky Barrier Diodes aimed at improving efficiency and thermal performance in demanding power conversion designs. The series includes devices rated at 650 V and 1200 V peak repetitive reverse voltage (VRRM), supporting high-voltage rectification needs across industrial, automotive and energy infrastructure applications.
The new diodes are offered in DPAK, D2-PAK and TO-220AC packages, giving designers multiple options to balance footprint, mechanical integration and heat dissipation. MCC positions the lineup for systems where higher power density and robust thermal management are critical.
Built on Gen4 SiC technology, the devices deliver negligible reverse recovery charge (Qrr) and a low forward voltage drop, typically ≤ 1.65 V at rated current. As majority-carrier devices, SiC Schottky diodes avoid minority-carrier storage effects found in conventional silicon rectifiers, which helps reduce switching losses and supports higher-frequency operation.
MCC said the Gen4 SiC Schottky Diode Series is intended to enable higher switching efficiency, lower thermal losses and improved power density in high-voltage power stages.
Key features and benefits include negligible Qrr for reduced switching losses, low forward voltage drop to minimize conduction losses, fast switching capability for higher-frequency designs, and a positive temperature coefficient of forward voltage to support thermal stability. Package options include DPAK for compact layouts with PCB-based heat spreading, D2-PAK for higher-power thermal performance, and TO-220AC for through-hole mounting with low thermal resistance.
Original – Micro Commercial Components
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SemiQ Inc will debut its latest SiC module developments at the 2026 Applied Power Electronics Conference (APEC). The company will present the portfolio at Booth #1451 during the event, running March 22–26.
SemiQ said the modules are designed to deliver compact, high-efficiency solutions for active front ends (AFE) and for high-performance compressor units used in advanced data center cooling systems. The lineup targets rising power and thermal demands driven by AI-focused data centers, as well as high-power industrial and EV applications.
Visitors to the booth will be able to see SemiQ’s QSiC™ Gen3 SiC modules, which the company says deliver up to 30% reductions in specific on-resistance (RONsp) and turn-off energy losses (EOFF) versus prior generations. SemiQ positions these improvements as a way to cut switching losses, simplify cooling and raise overall system efficiency in applications such as EV charging stations, energy storage systems and industrial motor drives.
Additional module families featured at APEC 2026 include:
- S3 modules, including a 608 A half-bridge with 2.4 mΩ RDS(on) and RθJC of 0.07°C/W
- SOT-227 modules, with five variants offering RDS(on) values of 7.4, 14.5 and 34 mΩ for server power supplies, battery chargers and PV inverters
- B2T1 six-pack modules spanning 19.5 to 82 mΩ RDS(on), designed to minimize parasitics in motor drives and advanced AC-DC converters
- B3 full-bridge modules delivering up to 120 A with RDS(on) as low as 8.6 mΩ, targeting high power density in high-voltage DC-DC systems
“These SiC technologies directly address the challenges faced by those implementing AI infrastructure,” said Dr. Timothy Han, President at SemiQ. “By improving efficiency, and addressing the escalating power demands of datacenters across key application areas, we are expanding the potential for AI to scale sustainably.”
Original – SemiQ
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Navitas Semiconductor announced the launch of its 5th-generation GeneSiC technology platform, built around a new high-voltage silicon carbide Trench-Assisted Planar (TAP) MOSFET architecture. The company said the platform will underpin an industry-leading 1200 V MOSFET family and complements its 4th-generation GeneSiC ultra-high-voltage portfolio at 2300 V and 3300 V, targeting applications such as AI data centers, grid and energy infrastructure, and industrial electrification.
According to Navitas, the 5th-generation platform uses its most compact TAP architecture to combine planar-gate ruggedness with improved performance enabled by a trench structure in the source region. The design focus is to raise efficiency while supporting long-term reliability in high-voltage power conversion.
Navitas said the new 1200 V technology delivers a 35% improvement in the RDS,ON × QGD figure of merit versus the prior-generation 1200 V platform, reducing switching losses and enabling cooler operation and higher switching frequencies. High-speed switching performance is further supported by an approximately 25% improvement in the QGD/QGS ratio. Combined with a stable high threshold voltage specification (VGS,TH ≥ 3 V), the company positions the platform as more immune to parasitic turn-on in high-noise environments.
The 5th-generation technology also targets dynamic performance through an optimized RDS(ON) × EOSS characteristic and adds “Soft Body-Diode” technology intended to improve commutation behavior and reduce electromagnetic interference (EMI) in fast-switching power stages.
For reliability, Navitas said this generation is qualified to an “AEC-Plus” grade for long-term stability in demanding infrastructure applications. The company highlighted extended stress testing for static high-temperature, high-voltage conditions, dynamic reliability tests intended to reflect fast-switching mission profiles, and a focus on threshold voltage stability over prolonged switching stress. Navitas also cited extreme gate oxide reliability, with an extrapolated gate-oxide failure time exceeding 1 million years at operating VGS of 18 V and 175°C, and enhanced cosmic ray robustness aimed at lowering FIT rates for high-uptime environments. Navitas noted that “AEC-Plus” indicates parts exceeding AEC-Q101 and JEDEC standards for reliability testing based on Navitas test results.
“Our customers are redefining the boundaries of power conversion in AI data centers and energy infrastructure, and Navitas is marching along with them in every step of the way,” said Paul Wheeler, VP & GM of Navitas’ SiC Business Unit. “Significant technological improvements in our 5th generation GeneSiC technology underscore Navitas’ commitment to delivering industry-leading performance and reliability in silicon carbide MOSFETs.”
Navitas said a white paper on Trench-Assisted Planar technology is available from the company, and that additional 5th-generation GeneSiC product announcements are expected in the coming months.
Original – Navitas Semiconductor
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Infineon Technologies announced that its CoolSiC™ MOSFETs have been adopted in Toyota’s new bZ4X model. The silicon carbide devices are integrated in the vehicle’s on-board charger (OBC) and DC/DC converter, leveraging SiC’s low-loss performance, high thermal capability and high-voltage strength to help extend driving range and reduce charging time.
“We are very proud that Toyota, one of the world’s largest automakers, has chosen Infineon’s CoolSiC technology. Silicon carbide enhances the range, efficiency and performance of electric vehicles and is therefore a very important part of the future of mobility,” said Peter Schaefer, Executive Vice President and Chief Sales Officer Automotive at Infineon. He added that Infineon’s focus on innovation and zero-defect quality supports rising demand for power electronics in electromobility.
Infineon noted that CoolSiC MOSFETs use a trench gate structure that reduces normalized on-resistance and chip size, lowering both conduction and switching losses to improve overall efficiency in automotive power systems. Optimized parasitic capacitance and gate threshold voltage also enable unipolar gate drive, which can simplify drive circuitry in the electric drivetrain while supporting high-density, high-reliability OBC and DC/DC converter designs.
Original – Infineon Technologies
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RIR Power Electronics Limited introduced a new family of Silicon Carbide (SiC) Merged-PiN Schottky (MPS) diodes, advancing power device performance for electric vehicles, industrial power systems, and energy infrastructure. By combining Schottky and PiN structures in a single monolithic device, the SiC MPS architecture addresses long-standing trade-offs between efficiency, high-voltage blocking, and ruggedness, delivering real-world reliability at high power and temperature.
Positioned for the next phase of global electrification across transportation, renewables, data centers, and industrial infrastructure, the devices leverage SiC’s inherent advantages—higher operating voltages, faster switching, and superior thermal behavior—to boost power density while reducing system losses.
Key advantages
- High surge current capability for inrush, short-circuit, and grid-disturbance events
- Low leakage at elevated temperatures for stable, predictable operation
- Improved avalanche and blocking robustness for DC-link and grid-tied systems
- Near-zero reverse recovery for ultra-fast, low-loss switching
- Higher system reliability with reduced need for snubbers, over-design, and derating
Target applications
- EVs and HEVs (traction, OBC, DC-DC)
- Data centers and AI power infrastructure
- Renewable energy and grid systems
- Industrial drives and motion control
- Aerospace and defense platforms
- Green hydrogen and electrolysis systems
“With our new 1200 V SiC MPS diodes, RIR is making high-performance Silicon Carbide more accessible, reliable, and deployment-ready,” said Dr. Harshad Mehta, Non-Executive Chairman, RIR Power Electronics Ltd. “Backed by decades of high-power semiconductor expertise, we are enabling designers worldwide to harness the full potential of SiC—confidently and efficiently—across the most demanding applications, including EVs, data centers, renewables, industrial systems, aerospace, and green hydrogen.”
Original – RIR Power Electronics
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Wolfspeed, Inc. introduced its TOLT (TO-Leaded, Top-Side Cooled) package portfolio designed to deliver maximum power density for datacenter rack power supplies. By releasing heat from the top of the package, TOLT significantly improves cooling efficiency, enabling smaller, more reliable power systems that meet the rising demands of AI datacenters.
“AI is pushing datacenter OEMs to be incredibly strategic about the size and total efficiency of their power systems,” said Guy Moxey, vice president of Wolfspeed’s Industrial & Energy business. “Our TOLT product family offers a straightforward path to delivering higher-density, thermally optimized power systems capable of sustaining the demands of AI datacenters, and Wolfspeed’s Gen 4 technology helps these systems run cooler, more efficiently, and more reliably.”
Silicon carbide continues to outpace silicon in high-power applications, supporting gains in performance and system cost across AI datacenters, e-mobility, renewable energy, and battery energy storage. Wolfspeed’s U.S.-based silicon carbide substrate production underpins supply chain resilience and provides a stable domestic source for mission-critical power systems as large AI projects scale.
The initial 650 V TOLT products are available in multiple RDS(on) options, with additional details on Wolfspeed’s third top-side-cooled portfolio to follow in the second half of 2026.
Original – Wolfspeed
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Vishay Intertechnology, Inc. introduced five 1200 V MOSFET power modules built on its latest-generation silicon carbide (SiC) technology and housed in the fully insulated, compact SOT-227 package. The new Vishay Semiconductors devices—VS-SF50LA120, VS-SF50SA120, VS-SF100SA120, VS-SF150SA120, and VS-SF200SA120—deliver best-in-class forward voltage drop down to 0.83 V to cut conduction losses and raise system efficiency.
Offered in single-switch and low-side chopper configurations, each module integrates a SiC MOSFET with a soft body diode to minimize reverse-recovery charge, reducing switching losses in medium- to high-frequency designs. Target applications include solar inverters; off-board EV chargers; SMPS, DC/DC converters, UPS and HVAC systems; large battery storage; and telecom power supplies.
The SOT-227 form factor enables drop-in replacement for competing modules without PCB changes. Its molded, fully insulated design provides electrical isolation up to 2500 V for one minute, which can lower system cost by eliminating separate insulation between the device and heatsink.
Key characteristics include continuous drain current ratings from 50 A to 200 A, low on-resistance down to 12.1 mΩ, high-speed switching with low capacitance, and a maximum operating junction temperature of +175 °C. The devices are RoHS-compliant and UL-approved (file E78996).
Device highlights:
- VS-SF50LA120 — 1200 V, 50 A, 43 mΩ, low-side chopper, SOT-227
- VS-SF50SA120 — 1200 V, 50 A, 47 mΩ, single switch, SOT-227
- VS-SF100SA120 — 1200 V, 100 A, 23 mΩ, single switch, SOT-227
- VS-SF150SA120 — 1200 V, 150 A, 16.8 mΩ, single switch, SOT-227
- VS-SF200SA120 — 1200 V, 200 A, 12.1 mΩ, single switch, SOT-227
Samples and production quantities are available now with 13-week lead times.
Original – Vishay Intertechnology
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Mitsubishi Electric Corporation will begin shipping samples on January 21 of four new trench silicon carbide MOSFET bare dies for power electronics equipment, including electric-vehicle traction inverters, onboard chargers, and power supplies for renewable energy such as solar. The new bare dies are designed to help embed advanced SiC devices directly into systems to lower power consumption while maintaining performance.
The devices will be showcased at the 40th Nepcon Japan R&D and Manufacturing show in Tokyo from January 21–23, with additional exhibitions planned in North America, Europe, China, India and other regions.
Growing decarbonization efforts are expanding the market for high-efficiency power electronics. Demand is rising for power semiconductors that enable EV traction inverters and renewable-energy systems to cut losses while preserving performance and quality.
Since 2010, Mitsubishi Electric has shipped SiC power modules that reduce energy use in air conditioners, industrial equipment and railway inverters. To meet the shift toward advanced bare-die integration, the company is introducing four new trench SiC-MOSFET bare dies that leverage a proprietary trench structure to cut power loss by approximately 50% versus planar SiC-MOSFETs. Proprietary manufacturing, including Mitsubishi Electric’s gate oxide film process, suppresses variation in power loss and on-resistance, supporting stable, long-term quality.
Original – Mitsubishi Electric
