• Vishay Intertechnology Releases 650 V E Series Power MOSFET

    Vishay Releases 650 V E Series Power MOSFET

    2 Min Read

    Vishay Intertechnology, Inc. introduced a new fourth-generation 650 V E Series power MOSFET that delivers high efficiency and power density for telecom, industrial, and computing applications. Compared to previous-generation devices, the Vishay Siliconix n-channel SiHP054N65E slashes on-resistance by 48.2 %, while offering a 59 % lower resistance times gate charge, a key figure of merit (FOM) for 650 V MOSFETs used in power conversion applications.

    Vishay offers a broad line of MOSFET technologies that support all stages of the power conversion process, from high voltage inputs to the low voltage outputs required to power the latest high tech equipment. With the SiHP054N65E and other devices in the fourth-generation 650 V E Series family, the company is addressing the need for efficiency and power density improvements in two of the first stages of the power system architecture — power factor correction (PFC) and subsequent DC/DC converter blocks.

    Typical applications will include servers, edge computing, and data storage; UPS; high intensity discharge (HID) lamps and fluorescent ballast lighting; solar inverters; welding equipment; induction heating; motor drives; and battery chargers.

    Built on Vishay’s latest energy-efficient E Series superjunction technology, the SiHP054N65E’s low typical on-resistance of 0.051 Ω at 10 V results in a higher power rating for applications > 2 kW and allows the device to address the Open Compute Project’s Open Rack V3 (ORV3) standards. In addition, the MOSFET offers ultra low gate charge down to 72 nC. The resulting FOM of 3.67 Ω*nC is 1.1 % lower than the closest competing MOSFET in the same class, which translates into reduced conduction and switching losses to save energy and increase efficiency. This allows the device to address the specific titanium efficiency requirements in server power supplies or reach 96 % peak efficiency in telecom power supplies.

    For improved switching performance in hard-switched topologies such as PFC, half-bridge, and two-switch forward designs, the MOSFET released today provides low typical effective output capacitances Co(er) and Co(tr) of 115 pF and 772 pF, respectively. The device’s resulting resistance times Co(er) FOM is an industry-low 5.87 Ω*pF. Offered in the TO-220AB package and providing increased dv/dt ruggedness, the SiHP054N65E is RoHS-compliant, halogen-free, and Vishay Green, and is designed to withstand overvoltage transients in avalanche mode with guaranteed limits through 100 % UIS testing.

    Original – Vishay Intertechnology

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  • Toshiba Expands 80 V N-Channel Power MOSFETs

    Toshiba Expands 80 V N-Channel Power MOSFETs

    2 Min Read

    Toshiba Electronic Devices & Storage Corporation has launched three 80 V N-channel power MOSFET products that use its latest generation process “U-MOSX-H series” and are suitable for switching power supplies for industrial equipment—used for such as data centers and communication base stations—and expanded the lineup.

    The new products use the surface mount type SOP Advance(N) package, and their drain-source On-resistance (max) is 3 mΩ for “TPH3R008QM”, 6 mΩ for “TPH6R008QM”, and 8.8 mΩ for “TPH8R808QM”.

    The new products have reduced the figure of merits (FOMs: expressed as On-resistance × charge characteristics.) In case of TPH3R008QM, it has reduced its FOMs, drain-source On-resistance × total gate charge by approximately 48 %, drain-source On-resistance × gate switch charge by approximately 16 %, and drain-source On-resistance × output charge by approximately 33 %, compared to Toshiba’s existing product TPH4R008NH. This contributes to lowering power consumption of equipment.

    Toshiba is expanding its lineup of products to help cut equipment power consumption.

    Applications

    • Switching power supplies (high efficiency AC-DC converters, high efficiency DC-DC converters, etc.)
    • Motor control equipment (motor drives, etc.)

    Features

    • Latest generation process U-MOSX-H series
    • Low On-resistance:
      TPH3R008QM RDS(ON)=3 mΩ (max) (VGS=10 V)
      TPH6R008QM RDS(ON)=6 mΩ (max) (VGS=10 V)
      TPH8R808QM RDS(ON)=8.8 mΩ (max) (VGS=10 V)
    • High channel temperature: Tch (max)=175 °C

    Original – Toshiba

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  • Infineon Presents H7 Variant of Gen7 Discrete 650 V TRENCHSTOP™ IGBTs

    Infineon Presents H7 Variant of Gen7 Discrete 650 V TRENCHSTOP™ IGBTs

    2 Min Read

    Infineon Technologies AG expands its 7th generation TRENCHSTOP™ IGBT family with the discrete 650 V IGBT7 H7 variant. The devices feature a cutting-edge EC7 co-packed diode with an advanced emitter-controlled design, coupled with high-speed technology to address the escalating need for environmentally conscious and highly efficient power solutions.

    Using the latest micro-pattern trench technology, the TRENCHSTOP IGBT7 H7 offers excellent control and performance, resulting in significant loss reduction, improved efficiency and higher power density. As a result, the device is ideal for various applications such as string inverters, energy storage systems (ESS), electric vehicle charging applications, and traditional applications such as industrial UPS and welding.

    In a discrete package, the 650 V TRENCHSTOP IGBT7 H7 can deliver up to 150 A. The portfolio includes variants from 40 A to 150 A, offered in four different package types: TO-247-3 HCC, TO-247-4, TO-247-3 Plus and TO-247-4 Plus. The TO-247-3 HCC variant of the TRENCHSTOP IGBT 7 H7 features a high creepage distance.

    For improved performance, the TO-247 4-pin packages (standard: IKZA, Plus: IKY) are particularly well suited, as they not only reduce switching losses, but also offer additional benefits such as lower voltage overshoot, minimized conduction losses and the lowest reverse current loss. With these features, the TRENCHSTOP IGBT 7 H7 simplifies the design and minimizes the need to connect devices in parallel.

    In addition, the 650 V TRENCHSTOP IGBT 7 H7 features robust moisture resistance for reliable operation in harsh environments. The device is qualified for industrial use according to the relevant tests of JEDEC47/20/22, especially HV-H3TRB, making it well suited for outdoor applications.

    Designed to meet the demand for green and efficient power applications, the IGBT offers significant improvements over the previous generations. As a result, the TRENCHSTOP IGBT 7 H7 is the ideal complement for the NPC1 topology often used in applications such as solar and ESS.

    Original – Infineon Technologies

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  • Toshiba Launches Automotive 40V N-Channel Power MOSFETs

    Toshiba Launches Automotive 40V N-Channel Power MOSFETs

    2 Min Read

    Toshiba Electronic Devices & Storage Corporation has launched two automotive 40V N-channel power MOSFETs, “XPJR6604PB” and “XPJ1R004PB,” that use Toshiba’s new S-TOGL™ (Small Transistor Outline Gull-wing Leads) package with U-MOS IX-H process chips. Volume shipments start today.

    Safety-critical applications like autonomous driving systems ensure reliability through redundant design, with the result that they integrate more devices and require more mounting space than standard systems. Accordingly, advancing size reductions in automotive equipment requires power MOSFETs that can be mounted at high current densities.

    XPJR6604PB and XPJ1R004PB use Toshiba’s new S-TOGL™ package (7.0mm×8.44mm) which features a post-less structure unifying the source connective part and outer leads. A multi-pin structure for the source leads decreases package resistance.

    The combination of the S-TOGL™ package and Toshiba’s U-MOS IX-H process achieve a significant On-resistance reduction of 11% against Toshiba’s TO-220SM (W) package product, which has the same thermal resistance characteristics. The new package also cuts the required mounting area by approximately 55% against the TO-220SM(W) package.

    On top of this, the 200A drain current rating of the new package is higher than Toshiba’s similarly sized DPAK + package (6.5mm×9.5mm), enabling high current flow. Overall, the S-TOGL™ package realizes high-density and compact layouts, reduces the size of automotive equipment, and contributes to high heat dissipation.

    Since automotive equipment is used in extreme temperature environments, the reliability of surface mounting solder joints is a critical consideration. The S-TOGL™ package uses gull-wing leads that reduce mounting stress, improving the reliability of the solder joint.

    Assuming that multiple devices will be connected in parallel for applications requiring higher-current operation, Toshiba supports grouping shipment for the new products, in which the gate threshold voltage is used for grouping. This allows designs using product groups with small characteristic variation.

    Toshiba will continue to expand its product line-up of power semiconductor products and contribute to the realization of carbon neutrality with more user-friendly, high-performance power devices.

    Features:

    • New S-TOGL™ package: 7.0mm×8.44mm (typ.)
    • Large drain current rating:
      XPJR6604PB: ID=200A
      XPJ1R004PB: ID=160A
    • AEC-Q101 qualified
    • IATF 16949/PPAP available[4]
    • Low On-resistance:
      XPJR6604PB: RDS(ON)=0.53mΩ (typ.) (VGS=10V)
      XPJ1R004PB: RDS(ON)=0.8mΩ (typ.) (VGS=10V)

    Original – Toshiba

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  • Infineon Launched New Automotive OptiMOS™ 5 in TOLx Packages

    Infineon Launched New Automotive OptiMOS™ 5 in TOLx Packages

    2 Min Read

    The electrification of the transportation system is advancing continuously. In addition to passenger cars, 2- and 3-wheelers as well as light vehicles are increasingly being electrified. Therefore, the automotive market for Electronic Control Units (ECUs) powered by 24 V-72 V is expected to keep growing in the coming years.

    To address this development, Infineon Technologies AG is complementing its OptiMOS™ 5 portfolio of automotive MOSFETs in the 60 V and 120 V range with new products in the high power packages TOLL, TOLG and TOLT. They are offering a compact form factor with very good thermal performance combined with excellent switching behavior.

    The six new products offer a narrowed gate threshold voltage (V GS(th)) enabling designs with parallel MOSFETs for increased output power capability. The IAUTN06S5N008, IAUTN06S5N008G and IAUTN06S5N008T are 60 V MOSFETs, and the IAUTN12S5N017, IAUTN12S5N018G and IAUTN12S5N018T are 120 V MOSFETs.

    The on resistance (R DS(on)) ranges from 1.7 mΩ to 1.8 mΩ for the 120 V MOSFETs and is 0.8 mΩ for the 60 V MOSFETs. This makes the 60V MOSFETs perfectly suited for high power 24 V supplied CAV applications or for HV-LV DCDC converters in xEVs. The 120 V MOSFETs are used in 48 V – 72 V supplied traction inverters for 2- or 3-wheelers and light electric vehicles.

    Original – Infineon Technologies

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  • University of Arkansas Began Construction of the national Multi-User Silicon Carbide Research and Fabrication Facility

    University of Arkansas Began Construction of the National Multi-User Silicon Carbide Research and Fabrication Facility

    4 Min Read

    The University of Arkansas has taken the next step to becoming a national leader in the United States’ semiconductor economy. Semiconductors, such as silicon, are essential materials in most electronic devices and advance performance in fields such as healthcare, national defense, computing and transportation.

    This August, the university began construction on the national Multi-User Silicon Carbide Research and Fabrication Facility, or MUSiC. Capable of silicon or silicon carbide chip fabrication, this new semiconductor research and fabrication facility will enable the government, businesses of all sizes, and universities to prototype in silicon carbide, introducing a capability that does not presently exist in the U.S.

    This unique facility will offer low-volume prototyping for high-volume manufacturing, bridging the gap between traditional university research and the needs of private industry. This will accelerate both workforce development and technological advancement in semiconductors by providing a single location where chips can be go from developmental research to prototyping, testing and fabrication. 

    Alan Mantooth, Distinguished Professor of electrical engineering at the U of A, is principal investigator for MUSiC. He stated that with MUSiC, the university could “begin training the next generation at a variety of degree levels to provide well-trained and educated talent for onshoring semiconductor manufacturing that domestic suppliers offshored in the late 90s and early 2000s. Our training will be equally applicable to silicon and silicon carbide and other materials.”

    Construction coincides with the CHIPS America Summit on Aug. 17, an invitation-only event for research, industry and governmental leaders from across the nation to discuss CHIPS and Science Act semiconductor-related opportunities and the ways in which the U of A and the State of Arkansas are uniquely positioned to lead.

    The summit will feature Director of External and Government Affairs for the U.S Department of Commerce’s CHIPS Program Office, Adrienne Elrod. U.S. Representative Steve Womack and Arkansas Secretary of Commerce Hugh McDonald will also participate.

    In addition to the MUSiC facility, the U of A is also home to the first Energy Frontier Research Center in Arkansas, as part of a team of researchers who received $10.35 million from the U.S. Department of Energy. The Center for Manipulation of Atomic Ordering for Manufacturing Semiconductors is dedicated to investigating the formation of atomic orders in semiconductor alloys and their effects on various physical properties. This research program will enable reliable, cost-effective and transformative manufacturing of semiconductors. 

    Researchers at the U of A previously established the MonArk NSF Quantum Foundry to accelerate the development of quantum materials and devices. In collaboration with Montana State University, and other member universities, the foundry supports the study of 2-D materials — consisting of a single layer of bonded atoms — by aiding researchers and facilitating the exchange of ideas across academia and industry. The project leads the fabrication of 2-D material quantum devices and their characterization, using low-temperature electronic transport and optoelectronic techniques.

    The U of A’s existing and expanding research foundation means it’s uniquely positioned to take advantage of the recent CHIPS (Creating Helpful Incentives to Produce Semiconductors) and Science Act, which is providing approximately $280 billion in funding to stimulate domestic research and manufacturing of semiconductors.

    As a result of manufacturing and production shortages of essential computer chips during the pandemic, which are overwhelmingly manufactured overseas, the federal government has prioritized the onshoring of this critical technology.

    About the University of Arkansas: As Arkansas’ flagship institution, the U of A provides an internationally competitive education in more than 200 academic programs. Founded in 1871, the U of A contributes more than $2.2 billion to Arkansas’ economy through the teaching of new knowledge and skills, entrepreneurship and job development, discovery through research and creative activity while also providing training for professional disciplines.

    The Carnegie Foundation classifies the U of A among the few U.S. colleges and universities with the highest level of research activity. U.S. News & World Report ranks the U of A among the top public universities in the nation. See how the U of A works to build a better world at Arkansas Research and Economic Development News.

    The national Multi-User Silicon Carbide Research and Fabrication Facility, or MUSiC, will provide opportunities for the government and business of all sizes, and universities to prototype in silicon carbide, introducting a capability that does not currently exist in the U.S.

    Original – University of Arkansas

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  • Fuji Electric Releases the 3rd-Generation IPMs

    Fuji Electric Releases 3rd-Generation IPMs

    2 Min Read

    Fuji Electric Co., Ltd. announced the launch of the P633C Series 3rd-generation small IPMs, which help reduce the power consumption of the equipment on which it is mounted, such as home appliances and machine tools.

    IPMs (intelligent power modules) are power semiconductors equipped with a built-in IGBT drive circuit and protection function. They are used for applications including inverters and servo systems. Inverters and servo systems control machine operation by controlling voltage and frequency through power semiconductor switching (turning electricity on and off), but power semiconductors generate power loss and electromagnetic noise during switching.

    This product can reduce both the power loss and the electromagnetic noise generated during switching. Using this product in inverters for home appliances or servo systems for machine tools can reduce the power consumption of the equipment on which it is mounted, thereby contributing to the achievement of a decarbonized society.

    One way to reduce the power loss that occurs during switching is to speed up the switching operation. Faster switching increases electromagnetic noise, which can cause peripheral devices to malfunction. This product uses the latest 7th-generation IGBT/FWD chips, achieving a 10% reduction of power loss and a reduction of electromagnetic noise to approximately 1/3 compared with conventional products. The trade-off characteristics between power loss and noise are among the best in the industry.

    Original – Fuji Electric

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  • WeEn Semiconductor's First Global Module Plant Commences Operations in Shanghai

    WeEn Semiconductor’s First Global Module Plant Commences Operations in Shanghai

    4 Min Read

    The opening ceremony of WeEnwin Jinshan Module Plant was held in the Shanghai Jinshan High-tech Industrial Development Zone. The ceremony marked the official commencement of WeEn’s world-first module plant, intended to produce various types of power module products utilized in consumer electronics, communications, new energy, and automotive applications. The products connect customers and the ecosystems, actively fostering the high-quality development of the industry.

    Markus Mosen, WeEn Semiconductors Co., Ltd. CEO; Chen Song, COO; Tang Ziming, CFO; Wu Rui, CHRO; Peng Xijun, general manager of Shanghai New Jinshan Industrial Investment & Development Co., Ltd; Zhao Fei, deputy director of the Jinshan District Development and Reform Commission; Cao Qin, deputy director of the Jinshan District Investment Promotion Office; other relevant department heads of the New Jinshan Development Company; WeEn boards Zhang Xinyu, Chang Liang, and Zhu Fenglin; together with representatives from WeEn’s global partners, numerous customers, vendors, approximately 200 guests attended the event to personally witness this historic step in WeEn’s new journey.

    Located in the Shanghai Bay Area High-tech Industrial and Development Zone, WeEn Jinshan Module Plant covers an area of 11,000 square meters. The construction of the plant began in August 2022. Eight months later in April 2023, the building quality and fire inspection compliance tests were successfully completed.

    WeEn Semiconductors Co., Ltd. has invested approximately RMB 200 million in the wholly-owned new Jinshan Module Plant, which has introduced over a hundred of the industry’s most advanced power module production and testing equipment to meet the market’s mainstream demand for various types of module products.

    It is worth underscoring that the newly established WeEnwin Module Plant has simultaneously set up an advanced packaging R&D center to develop and mass produce cutting-edge packaging technologies while researching the applicability of new materials.

    To optimize efficiency and reliability, the fully automated module production line is equipped with top-notch processing capabilities, including lead-free chip bonding/silver sintering bonding, lead-free soldering/ultrasonic soldering of terminals, aluminum wire bonding, and copper tab connections. Currently, WeEnwin module plant. has obtained ISO9001 and IATF16949 certifications and undergone VDA6.3 process audits, evidence of the company’s robust system that guarantees top-quality products.

    Peng Xijun, general manager of Shanghai New Jinshan Industrial Investment & Development Co., Ltd, warmly congratulated WeEnwin for the opening, noting that the event was a testimony of the concerted efforts of all parties. He further stated that the collective endeavors have significant importance in elevating the power semiconductor industry’s development level and accelerating the concentration of the optoelectronic chip industry in the high-tech industrial and development zone.

    In addition, he expressed his wish for the high-tech zone, as it embarks on its new era journey, to continue harnessing resources and efforts and attracting policies aimed at strengthening the innovation chain, extending the industrial chain, and improving the ecosystem.

    Meanwhile, Markus Mosen, WeEn Semiconductors Co., Ltd. CEO stated, “Given the favorable winds, this is the perfect time to set sail.” WeEn’s investment in the world’s first module factory has successfully transitioned from planning to operation according to schedule. Therefore, we remain grateful for the strong support from the Jinshan District People’s Government, Shanghai Bay Area High-tech Industrial Development Zone, and FITA Tech.

    There is no doubt that without the collective efforts of our partners and team, this accomplishment would not have been possible. At WeEnwin, we will seize the opportunities of the era, leverage our product and technological strengths, and provide reliable and efficient power semiconductor devices to our customers and partners. As we inject new impetus into pragmatic cooperation, we remain confident in our ability to propel the ship of power device development toward a new journey.”

    The operation of the WeEnwin Jinshan Module plant will enhance the efficiency of WeEn Semiconductors Co., Ltd.’s entire industry chain layout and services. In addition to producing the most advanced SCR / FRD / IGBT / SIC modules, the factory will significantly improve the experience of customers and partners by offering innovative modules and packaging services for the automotive and renewable energy markets. It is projected that the first batch of products from the new Jinshan Module Factory for Chinese and overseas customers will be shipped in the fourth quarter of 2023.

    Original – WeEn Semiconductors

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  • Infineon Extends Product Portfolio with OptiMOS™ Power MOSFETs

    Infineon Extends Product Portfolio with OptiMOS™ Power MOSFETs

    2 Min Read

    A small footprint of discrete power MOSFETs plays a critical role in achieving space savings, cost reduction, and easy-to-design applications. Additionally, higher power density can lead to layout routing flexibility and overall system size reduction. By expanding the current PQFN 2×2 portfolio with the new best-in-class OptiMOS™ power MOSFETs, Infineon Technologies AG offers benchmark solutions optimized for efficiency and performance in a small footprint. The new products are ideal for applications like synchronous rectification in switched mode power supplies (SMPS) for servers, telecom, and portable- and wireless chargers. Additional applications also include electric speed controllers for small brushless motors in drones.

    The new OptiMOS 6 40 V and OptiMOS 5 25 V and 30 V power MOSFETs further optimize the proven OptiMOS technology for high-performance designs. They offer leading-edge silicon technology, package reliability, and superior thermal resistance (R thJC, max = 3.2 K/W) in the ultra-small PQFN 2×2 mm² package. The new devices combine industry-leading low on-resistance R DS(on) with industry-leading figures of merit (FOMs, Q G and Q OSS) for outstanding dynamic switching performance. As a result, MOSFETs with ultra-low switching and reduced conduction losses ensure optimal energy efficiency and power density, all while simplifying thermal management.

    With the compact PQFN 2×2 mm² package outline, the OptiMOS power switches enable an improved system form factor with smaller, more flexible geometric outlines for end-user applications. The MOSFETs facilitate reliable system design with less need for paralleling, significantly reducing space and system cost.

    Original – Infineon Technologies

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  • Infineon Adds New Devices in Superjunction MOSFET Family

    Infineon Adds New Devices in Superjunction MOSFET Family

    2 Min Read

    In static switching applications, power designs focus on minimizing conduction losses, optimizing thermal behavior, and achieving compact and lightweight systems while ensuring high quality at a low cost. To meet the needs of next-generation solutions, Infineon Technologies AG is expanding its CoolMOS™ S7 family of high-voltage superjunction (SJ) MOSFETs.

    The devices are aiming at SMPS, solar energy systems, battery protection, solid-state relays (SSR), motor-starters and solid-state circuit breakers, as well as PLCs, lighting control, HV eFuse/eDisconnect, (H)EV on-board chargers.

    The portfolio extension includes innovative QDPAK top-side cooling (TSC) packages and offers a wide range of features in a small footprint. This makes it highly advantageous for low-frequency switching applications while optimizing cost positioning.

    Thanks to the novel high-power QDPAK packaging, they offer an R DS(on) of only 10 mΩ, which is the lowest on the market in this voltage class and the lowest in SMD packages. By minimizing conduction losses of the MOSFETs, the CoolMOS S7/S7A solutions contribute to higher overall efficiency and provide an easy and cost-optimized way to improve system performance.

    The CoolMOS S7 power switches also effectively manage heat dissipation with improved thermal resistance. Thanks to the innovative and efficient QDPAK packaging, they also reduce or even eliminate the need for heat sinks in solid-state designs, resulting in more compact and lighter systems.

    The MOSFETs are available in both top-side and bottom-side variants, and feature high-pulse current capability, enabling them to handle sudden surges of current. In addition, they exhibit body diode robustness to ensure reliable operation during AC line commutation.

    With fewer components required, they reduce part count, resulting in flexible system integration, lower BOM costs, and total cost of ownership (TCO). In addition, these MOSFETs enable shorter reaction times, particularly when breaking a current, facilitating smoother and more efficient operation.

    Original – Infineon Technologies

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