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Cambridge GaN Devices revealed more details about a solution that will enable the company to address EV powertrain applications over 100kW – a market worth over $10B – with its ICeGaN® gallium nitride (GaN) technology. Combo ICeGaN® combines smart ICeGaN HEMT ICs and IGBTs (Insulated-Gate Bipolar Transistors) in the same module or IPM, maximizing efficiency and offering a cost-effective alternative to expensive silicon carbide (SiC) solutions.
Dr GIORGIA LONGOBARDI | FOUNDER AND CEO, CGD
“Today, inverters for EV powertrains either use IGBTs which are low cost but inefficient at light load conditions, or SiC devices which are very efficient but also expensive. Our new Combo ICeGaN solution will revolutionise the EV industry by intelligently combining the benefits of GaN and silicon technologies, keeping cost low and maintaining the highest levels of efficiency which, of course, means faster charging and longer range. We are already working with Tier One automotive EV manufacturers and their supply chain partners to bring this technology advancement to the market.”The proprietary Combo ICeGaN approach uses the fact that ICeGaN and IGBT devices can be operated in a parallel architecture having similar drive voltage ranges (e.g. 0-20V) and excellent gate robustness. In operation, the ICeGaN switch is very efficient, with low conduction and low switching losses at relatively low currents (light load), while the IGBT is dominant at relatively high currents (towards full load or during surge conditions).
Combo ICeGaN also benefits from the high saturation currents and the avalanche clamping capability of IGBTs and the very efficient switching of ICeGaN. At higher temperatures, the bipolar component of the IGBT will start to conduct at lower on-state voltages, supplementing the loss of current in the ICeGaN. Conversely, at lower temperatures, ICeGaN will take more current. Sensing and protection functions are intelligently managed to optimally drive the Combo ICeGaN and enhance the Safe Operating Area (SOA) of both ICeGaN and IGBT devices.
ICeGaN technology allows EV engineers to enjoy GaN’s benefits in DC-to-DC converters, on-board chargers and potentially traction inverters. Combo ICeGaN further extends the benefits of CGD’s GaN technology into the rich 100kW+ traction inverter market. ICeGaN ICs have been proven to be very robust and IGBTs have a long and proven track record in traction and EV applications. Similar, proprietary parallel combinations of ICeGaN devices with SiC MOSFETs have also been proven by CGD, but Combo ICeGaN – which is now detailed in a published IEDM paper – is a far more economical solution. CGD expects to have working demos of Combo ICeGaN at the end of this year.
Prof. FLORIN UDREA | FOUNDER AND CTO, CGD
“Having worked for three decades in the field of power devices, this is the first time I have encountered such a beautifully complementary technology pairing. ICeGaN is extremely fast and a star performer at light load conditions while the IGBT brings great benefits during full load, surge conditions and at high temperatures. ICeGaN provides on-chip intelligence while the IGBT provides avalanche capability. They both embrace silicon substrates which come with cost, infrastructure and manufacturability advantages.”CGD will be exhibiting at APEC (Applied Power Electronics Conference and Exposition). For more details about Combo ICeGaN, visit Booth 2039 at the Georgia World Congress Center | Atlanta, GA | March 16-20, 2025.
Original – Cambridge GaN Devices
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MCC Semi revealed the latest MOSFET designed to help engineers balance efficiency and thermal performance in high-power applications. The 150V MCTL4D0N15YH boasts a remarkably low on-resistance of 4mΩ, minimizing conduction losses for optimal efficiency.
Housed in a robust TOLL package, this component features advanced split-gate trench (SGT) technology and a junction-to-case thermal resistance of 0.39K/W for superior heat dissipation.
Equipped with an operating junction temperature capability of up to 175°C, this new MOSFET is the ideal solution for demanding applications, including battery management systems, motor drives, and DC-DC converters.
Offering versatility across multiple industries, MCTL4D0N15YH enhances system performance and longevity while reducing overall energy consumption.
Features & Benefits:
- SGT Technology: Ensures outstanding electrical performance and efficiency.
- Low On-Resistance (4mΩ): Minimizes power losses, enhancing system efficiency.
- Low Conduction Losses: Reduce energy waste, optimizing energy usage.
- Low Junction-to-Case Thermal Resistance (0.39K/W): Provides excellent heat dissipation capabilities.
- High Operating Junction Temperature (up to 175°C): Delivers reliability in high-temperature environments.
Original – Micro Commercial Components
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Toshiba Electronics Europe GmbH has launched an N-channel power MOSFET to address the growing market demand for improved efficiency in power supply circuits. The new TK024N60Z1 uses the proven DTMOSVI 600V series process with a super junction structure to achieve low on-resistance and reduced conduction losses. Applications include servers in data centres, switched-mode power supplies for industrial equipment, and power conditioners for photovoltaic generators.
The TK024N60Z1 has a drain-source on-resistance RDS(ON) of 0.024Ω (max), which is the lowest in the DTMOSVI 600V series. It also improves power supply efficiency, which reduces heat generation. Combined with the TO-247 package, which delivers high heat dissipation, the TK024N60Z1 offers good heat management characteristics.
Like other MOSFETS in the DTMOSVI 600V series, the TK024N60Z1 benefits from an optimised gate design and process. This reduces the value of drain-source on-resistance per unit area by approximately 13%. More importantly, drain-source on-resistance × gate-drain charge is reduced by approximately 52% compared to Toshiba’s conventional generation DTMOSIV-H series products with the same drain-source voltage rating. This means the DTMOSVI series, including the TK024N60Z1, offers a better trade-off between conduction loss and switching loss, which helps improve the efficiency of switched-mode power supplies.
To further improve power supply efficiency, Toshiba offers tools that support circuit design for switched-mode power supplies. These include the G0 SPICE model, which quickly verifies circuit function, and the highly accurate G2 SPICE models that reproduce transient characteristics.
The TK024N60Z1 N-channel power MOSFET exemplifies Toshiba’s commitment to continue expanding the DTMOSVI series and support energy conservation by reducing power loss in switched-mode power supplies.
Original – Toshiba
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SUMCO Corporation announced plans to transfer wafer production from the Miyazaki Plant of consolidated subsidiary SUMCO TECHXIV Corporation to other manufacturing facilities, with the aim of improving profitability by reorganizing the production of silicon wafers of 200 mm and smaller.
The current silicon wafer market environment is in a prolonged sluggish demand phase, due to such factors as the drop-off from extraordinary demand during the COVID-19 pandemic, and structural changes in the semiconductor supply chain occasioned by US-China friction.
Drawdown of 300 mm wafer inventories by customers is taking time, as semiconductor production adjustments continue; but overall demand is expected to recover gradually thanks to strong needs for leadingedge products for AI semiconductors and high-performance memory. Demand remains sluggish, however, for small-diameter wafers mainly for consumer, industrial, and automotive uses. Wafers of 150 mm and smaller, in particular, are expected to see falling demand, with customers shifting to 200 mm wafers or lowering their production capacity as manufacturing equipment reaches its end of life.
In this market environment, the SUMCO Group has decided to reorganize the Miyazaki Plant to improve efficiency through consolidation of the production capacity of small wafers. The Miyazaki Plant will become a factory solely for monocrystalline production, while wafer production will be transferred to other domestic plants in the SUMCO Group and to Indonesia, ending wafer production in Miyazaki by the end of 2026.
SUMCO intends to reassign employees affected by the reorganization to 300 mm wafer operations after the end of wafer production in Miyazaki. With this reorganization, expenses for business structural reforms have been posted for fiscal 2024 as extraordinary losses totaling 5.8 billion yen, consisting of an impairment loss on non-current assets of 4.6 billion yen and an inventory write-down, etc., of 1.2 billion yen.
The SUMCO Group is committed to ongoing efficiency-raising initiatives, including reorganization of production facilities. Moreover, with the accelerating pace of innovation in semiconductor technology, in addition to strategically making use of advanced manufacturing equipment currently under preparation for operation, we will focus management resources on modernizing equipment in existing 300 mm plants and boost our capacity for supplying leading-edge products for AI with their remarkable growth, as we strive to further raise our corporate value.
Original – SUMCO
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MCC Semi announced four new components in advanced P-channel MOSFET lineup. Supporting -100V applications from battery protection to motor drives and high-side switches, MCAC085P10, MCAC055P10, MCU055P10, and MCU085P10 are made for reliability in challenging environments.
With a maximum on-resistance of 55mΩ or 85mΩ, these MOSFETs improve overall system efficiency while reducing power dissipation. Leveraging trench technology and superior thermal performance, these versatile solutions provide engineers with high power density in a compact DFN5060 or DPAK package.
New P-channel MOSFETs are the obvious choice for unmatched performance and effective power management.
Features & Benefits:
- Trench MOSFET Technology: Enhances current capacity and reduces on-resistance
- Low On-Resistance: A maximum RDS(on) of 55mΩ or 85mΩ minimizes power consumption and boosts efficiency
- Low Conduction Losses: Reduce heat generation while improving overall system operation
- Excellent Thermal Performance: Safeguards device from overheating during use in high-temp scenarios
- High Power Density: Available in compact DFN5060 and DPAK package options
Original – Micro Commercial Components
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Vincotech announced the release of flow E3BP, an advancement of the company’s widely adopted flow 2 and flow E3 housing. Engineered to meet the increasingly challenging requirements for next-gen systems, the flow E3BP is the next step up the evolutionary ladder in power module technology across applications.
Designed to boost thermal performance and maximize power density, this advanced housing is the go-to option for high-power systems and next-generation applications. Featuring a specially treated surface, its convex baseplate provides a superior thermal contact to better disperse heat and handle more power with a smaller footprint.
The module’s CTI600 housing material holds up well to higher system voltages. Its isolation walls increase creepage and clearance distances. Pre-applied thermal interface material is optionally available, as are Press-fit pins. Rolling efficiency, reliability, and innovation into one exceptionally useful housing, the new flow E3BP meets demand for faster time to market, higher power ratings, and greater power density. An excellent fit for many different applications, it marks another stride towards a more sustainable future.
Developed with the increasingly challenging demands of renewable energy systems in mind, the flow E3BP is a remarkably efficient power module. Among others, it enables customers to design 350+ kW utility string PV inverters with just a single housing per phase, cutting 30% of the cost for a dual-module solution. It also serves to reduce the heatsink area by as much as 34% compared to flow E3, thereby increasing power density to 51%.
Chosen for its low inductivity, the new flow E3BP figures prominently in solar and ESS inverters for the utility and commercial segments. Today’s flow E3BP housing meets tomorrow’s 2000 V systems’ high voltage requirements, and the company aims to extend this product portfolio to address further applications such as motion control, industrial drives, and EV charging stations.
Determined to enable customers to bring their ideas to life, Vincotech continues to develop its range of power module housings, which now encompasses 24 options rated from less than 10 kW up to MW. The flow 2, flow S3, and flow E3 housings see wide use in solar and ESS applications. The latest addition to the line, the leading-edge flow E3BP, supports beyond 350 kW and pushes the envelope for PV and ESS solutions.
Original – Vincotech
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Mitsubishi Electric Corporation announced that it will begin shipping samples of two new S1-Series High Voltage Insulated Gate Bipolar Transistor (HVIGBT) modules, both rated at 1.7kV, for large industrial equipment such as railcars and DC power transmitters from December 26. Thanks to proprietary Insulated Gate Bipolar Transistor (IGBT) devices and insulation structures, the new modules offer excellent reliability and low power loss and thermal resistance, which are expected to increase the reliability and efficiency of inverters in large industrial equipment.
Mitsubishi Electric’s 1.7kV HVIGBT modules, first released in 1997 and highly regarded for their excellent performance and high reliability, have been widely adopted for inverters in power systems.
The new S1-Series modules incorporate Mitsubishi Electric’s proprietary Relaxed Field of Cathode (RFC) diode, which increases the Reverse Recovery Safe Operating Area (RRSOA) by 2.2 times compared to previous models for improved inverter reliability. In addition, the use of an IGBT element with a Carrier Stored Trench Gate Bipolar Transistor (CSTBT) structure helps reduce both power loss and thermal resistance for more efficient inverters.Furthermore, Mitsubishi Electric’s proprietary insulation structure increases the insulation voltage resistance to 6.0kVrms, 1.5 times that of previous products, resulting in more flexible insulation designs for compatibility with a wide range of inverter types.
Original – Mitsubishi Electric
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Nexperia announced the launch of 16 new 80 V and 100 V power MOSFETs in the innovative copper-clip CCPAK1212 package, delivering industry-leading power density and outright performance. The innovative copper-clip design provides high current conduction, reduced parasitic inductance, and excellent thermal performance. These features make the devices ideal for motor control, power supplies, renewable energy systems, and other power-hungry applications.
The range also includes application-specific MOSFETs (ASFETs) designed for AI server hot-swap functions. With top-side and bottom-side cooling options, these MOSFETs in CCPAK provide high power density and reliable solutions. All devices are supported by JEDEC registration and Nexperia’s interactive datasheets for seamless integration.
The benchmark PSMN1R0-100ASF is a 0.99 mΩ 100 V power MOSFET capable of conducting 460 A and dissipating 1.55 KW of power, yet in a CCPAK1212 package footprint that occupies only 12mm x 12mm of board space. The PSMN1R0-100CSF offers similar statistics in a top-side cooled version.
The secret to this impressive performance is the internal construction of the devices. The “CC” in CCPAK1212 stands for copper clip, meaning that the power MOSFET silicon die is sandwiched between two pieces of copper, the drain tab on one side and the source clip on the other. With wire bonds entirely eliminated, such an optimized assembly offers a low on-resistance, reduced parasitic inductances, high maximum current ratings and excellent thermal performance.
CCPAK1212 NextPower 80/100 V MOSFETs are recommended for power-hungry industrial applications where high efficiency and high reliability are critical, including brushless DC (BLDC) motor control, switched-mode power supplies (SMPS), battery management systems (BMS) and renewable energy storage. The availability of such power-capable MOSFETs in a single package reduces the need for parallelism, simplifying designs and offering more compact, cost-effective solutions.
The Nexperia CCPAK1212 announcement also includes some new application specific MOSFETs (ASFETs) targeting the hot-swap function in increasingly powerful AI servers. These devices feature an enhanced safe operating area (SOA), providing superior thermal stability during linear mode transitions.
Across all these applications, the availability of top-side and bottom-side cooling options provides engineers a choice of thermal extraction techniques, especially helpful where dissipating heat through the PCB is impractical due to the sensitivity of other components.
“Despite offering market-leading performance, we know that some customers will be reticent to design-in a relatively new package”, stated Chris Boyce, Product Group General Manager at Nexperia. “For this reason, we have registered the CCPAK1212 with the JEDEC standards organization (reference MO-359). We followed a similar approach when we introduced the first LFPAK MOSFET package some years ago and as a result there are now many compatible devices available in the market. You are never on your own for long when your innovations offer genuine value to your customers”, concluded Boyce.
All the new CCPAK1212 MOSFET devices are supported with a range of advanced design-in tools, including thermally compensated simulation models. Traditional PDF datasheets are supplemented with Nexperia’s user-friendly interactive datasheets, which now incorporate a new “graph-to-csv” feature that allows engineers to download, analyze and interpret the data behind each device’s key characteristics. This not only streamlines the design process but enhances confidence in design choices.
Nexperia plans to extend CCPAK1212 packaging to power MOSFETs across all voltage ranges and also to its automotive qualified AEC-Q101 portfolios, addressing the evolving demands of next-generation systems with the highest current and thermal performance requirements.
Original – Nexperia
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To provide higher efficiency and power density for telecom, industrial, and computing applications, Vishay Intertechnology, Inc. introduced a new 150 V TrenchFET® Gen V n-channel power MOSFET in the PowerPAK® SO-8S (QFN 6×5) package.
Compared to previous-generation devices in the PowerPAK SO-8, the Vishay Siliconix SiRS5700DP slashes overall on-resistance by 68.3% and on-resistance times gate charge — a key figure of merit (FOM) for MOSFETs used in power conversion applications — by 15.4% while providing 62.5% lower RthJC and 179 % higher continuous drain current.
With the industry’s lowest on-resistance of 5.6 mΩ at 10 V and on-resistance times gate charge FOM of 336 mΩ*nC, the device released today minimizes power losses from conduction. This allows designers to boost efficiency to meet next-generation power supply requirements, such as 6 kW AI server power systems. In addition, the extremely low 0.45 °C/W RthJC of the PowerPAK SO-8S package enables continuous drain current up to 144 A to increase power density while providing robust SOA capability.
The SiRS5700DP is ideal for synchronous rectification, DC/DC converters, hot swap switching, and OR-ing functionality. Typical applications will include servers, edge computing, super computers, and data storage; telecom power supplies; solar inverters; motor drives and power tools; and battery management systems. RoHS-compliant and halogen-free, the MOSFET is 100 % Rg and UIS tested and complies with IPC-9701 criteria for more reliable temperature cycling. The device’s standard 6 mm by 5 mm footprint is fully compatible with the PowerPAK SO-8 package.
Original – Vishay Intertechnology
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Littelfuse, Inc. announced the release of the IXTN400N20X4 and IXTN500N20X4 Ultra Junction X4-Class Power MOSFETs.
The new devices expand upon the current 200 V X4-Class Ultra Junction MOSFETs, featuring some of the lowest on-state resistances available. The high current ratings of these MOSFETs allow designers to replace multiple low-current rated devices connected in parallel, streamlining the design process and enhancing both reliability and power density in applications. Additionally, the screw-mounted terminals of the SOT-227B package enable rugged and stable mounting.
These new 200 V MOSFETs deliver the lowest on-state resistances, enhancing and complementing the existing Littelfuse X4-Class Ultra Junction family portfolio. Compared to the existing state-of-the-art X4-Class MOSFET solutions, these MOSFETs offer up to ~2x higher current ratings and RDS(on) values up to ~63% lower.
The new MOSFETs are ideal for a range of low-voltage power applications where minimizing on-state losses is essential, including:
- Battery Energy Storage Systems (BESS),
- Battery chargers,
- Battery formation,
- DC/battery load switch, and
- Power supplies.
“The new devices will allow designers to replace multiple low-current rated devices, connected in parallel, with a single device solution,” said Sachin Shridhar Paradkar, Global Product Marketing Engineer at Littelfuse. “This unique solution simplifies gate driver design, improves reliability, improves power density and PCB space utilization.”
The Ultra Junction X4-Class Power MOSFET offers the following key performance benefits:
- Low conduction losses
- Minimized parallel connection effort
- Simplified driver design with minimal driver losses
- Simplified thermal design
- Increased power density
A MOSFET with low on-state resistance (RDS(on)) is the ideal choice in applications where minimal on-state losses are crucial. It significantly reduces the power dissipation during operation, leading to lower conduction losses, higher efficiency, and less heat generation. This makes it perfect for power-sensitive applications such as power supplies, motor drivers, and battery-operated devices where maintaining high efficiency and thermal management is crucial.
Performance Specifications
Performance Specs IXTN500N20X4 IXTN400N20X4 Package Aluminum-nitride ceramic-based isolated SOT-227B On-state resistance RDS(on) = 1.99 mΩ @ Tvj = 25°C RDS(on) = 3 mΩ @ Tvj = 25°C High nominal current rating 500 A @ TC = 25°C 340 A @ TC = 25°C Gate charge Qg = 535 nC Qg = 348 nC Thermal resistance RthJC = 0.13 K/W RthJC = 0.18 K/W Original – Littelfuse
