• Toshiba Releases 150V N-channel Power MOSFET to Increase the Efficiency of Power Supplies

    Toshiba Releases 150V N-channel Power MOSFET to Increase the Efficiency of Power Supplies

    2 Min Read

    Toshiba Electronic Devices & Storage Corporation has launched a 150V N-channel power MOSFET “TPH9R00CQ5,” which uses the latest generation U-MOSX-H process, for switching power supplies of industrial equipment, such as that used in data centers and communications base stations.

    TPH9R00CQ5 features an industry-leading low drain-source On-resistance of 9.0mΩ (max), approximately a 42% reduction from Toshiba’s existing product, “TPH1500CNH1.” Compared with Toshiba’s existing product “TPH9R00CQH,” the reverse recovery charge is reduced by about 74% and the reverse recovery time by about 44%, both key reverse recovery characteristics for synchronous rectification applications. Used in synchronous rectification applications, the new product reduces the power loss of switching power supplies and helps improve efficiency. Furthermore, compared to TPH9R00CQH, the new product reduces spike voltage generated during switching, helping lower the EMI of power supplies.

    The product uses the popular, surface-mount-type SOP Advance(N) package.

    Toshiba also offers tools that support circuit design for switching power supplies. Alongside the G0 SPICE model, which verifies circuit function in a short time, highly accurate G2 SPICE models, which accurately reproduce transient characteristics, are now available.

    Toshiba has also developed “1 kW Non-Isolated Buck-Boost DC-DC Converter for Telecommunications Equipment” and “Three-phase Multi Level Inverter using MOSFET” reference designs that utilize the new product. They are available on Toshiba’s website from today. The new product can also be utilized for the already published “1 kW Full-Bridge DC-DC Converter” reference design.

    Toshiba will continue to expand its lineup of power MOSFETs that reduce power loss, increase the efficiency of power supplies, and help to improve equipment efficiency.

    Applications:

    • Power supplies of industrial equipment, such as that used in data centers and communications base stations.
    • Switching power supplies (high efficiency DC-DC converters, etc.)

    Features:

    • Industry-leading low On-resistance: RDS(ON)=9.0mΩ (max) (VGS=10V)
    • Industry-leading low reverse recovery charge: Qrr=34nC (typ.) (-dIDR/dt=100A/μs)
    • Industry-leading fast reverse recovery time: trr=40ns (typ.) (-dIDR/dt=100A/μs)
    • High channel temperature rating: Tch (max)=175°C

    Original – Toshiba

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  • ROHM Establishes Ultra-High-Speed Control IC Technology that Maximizes the Performance of GaN Devices

    ROHM Establishes Ultra-High-Speed Control IC Technology that Maximizes the Performance of GaN Devices

    2 Min Read

    While the adoption of GaN devices has expanded in recent years due to their superior high-speed switching characteristics, the speed of Control ICs, which are responsible for directing the driving of these devices, has become challenging.

    In response, ROHM has further evolved its ultra-high-speed pulse control technology Nano Pulse Control™. It is cultivated for power supply ICs, succeeding in significantly improving the control pulse width from the conventional 9ns to an industry-best 2ns. Leveraging this technology allowed ROHM to establish its ultra-high-speed Control IC technology that maximizes the performance of GaN devices.

    When pursuing miniaturization of the power supply circuit, it is necessary to reduce the size of the peripheral components through high-speed switching. Achieving this requires a Control IC that can take advantage of the drive performance of high-speed switching devices such as GaN devices.

    To propose solutions that include peripheral components, ROHM established ultra-high-speed Control IC technology optimized for GaN devices utilizing proprietary analog power supply technology Nano Pulse Control™.

    ROHM is currently working to commercialize Control ICs utilizing this technology, with plans to start sample shipment of 100V 1ch DC-DC Control IC in the second half of 2023. Using in conjunction with ROHM GaN devices (EcoGaN™ series) is expected to result in significant energy savings and miniaturization in a variety of applications, including base stations, data centers, FA (Factory Automation) equipment, and drones.

    Going forward, ROHM will continue to develop products that solve social issues by pursuing greater ease-of-use in applications centered on its strengths in analog technology.

    Original – ROHM

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  • CISSOID & Silicon Mobility Expand Partnership

    CISSOID & Silicon Mobility Expand Partnership

    2 Min Read

    CISSOID and Silicon Mobility have announced a far-reaching partnership to deliver a complete and modular Silicon Carbide (SiC) inverter reference design supporting electric motor drives up to 350kW/850V. The reference design includes CISSOID’s high voltage SiC-based power module, integrated Gate Driver board, Control board with Silicon Mobility’s ultra-fast and safe OLEA T222 FPCU, DC and phase current sensors, DC link capacitor and EMI filtering together with integrated liquid cooling. CISSOID will also sell and deliver Silicon Mobility’s OLEA® APP INVERTER Software for Electric Vehicle Powertrain Control providing the customer with a development platform ready for integration work.

    Dave Hutton, CISSOID’s CEO commented: “Up until now, customers only really had 2 options. The first was to develop all the hardware, then integrate with third party software into their design environment. This was extremely time consuming and required in depth knowledge of SiC-based power system design. The second option was to buy an off-the-shelf inverter that, however, does not offer the ability to fully customize for the application requirements.”

    Following this agreement, customers can now buy a complete SiC inverter reference design from CISSOID together with a license to use the Silicon Mobility’s OLEA® APP INVERTER control software and design on top its software application. CISSOID will also provide the technical support to integrate the inverter into the end-application.

    Once the design is completed, the customer can choose to purchase the entire inverter Bill-of-Material (BOM) from CISSOID or just the SiC Intelligent Power Module (IPM) and Control Board, while purchasing other components and Inverter housing from their preferred suppliers. The customer can then integrate the inverter into their motor drive system prior moving to production.

    David Fresneau, VP Marketing and Business Development at Silicon Mobility added: “This is a great opportunity for our customers to get access to our advanced e-motor control hardware and software platform and a fully integrated high performance inverter reference design from CISSOID which will significantly simplify the design process and reduce Time-to Market.

    Original – CISSOID

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