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Infineon Technologies AG announced the first of a new family of radiation hardened Gallium Nitride (GaN) transistors, fabricated at Infineon’s own foundry, based on its proven CoolGan™ technology. Designed to operate in harsh space environments, the company’s new product is the first in-house manufactured GaN transistor to earn the highest quality certification of reliability assigned by the United States Defense Logistics Agency (DLA) to the Joint Army Navy Space (JANS) Specification MIL-PRF-19500/794.
The new radiation hardened GaN High Electron Mobility Transistor (HEMT) devices are engineered for mission-critical applications required in on-orbit space vehicles, manned space exploration, and deep space probes. Combining the robust performance of GaN HEMTs with Infineon 50+ years of experience in high reliability applications, the new power transistors deliver best-in-class efficiency, thermal management and power density for smaller, lighter, and more reliable space designs. The devices complement Infineon’s proven legacy radiation hardened silicon MOSFET portfolio, providing customers with access to a full catalog of power solutions for space applications.
“The Infineon team continues to push the limits of power design with our new GaN transistor line,” said Chris Opoczynski, Senior Vice President and General Manager HiRel, at Infineon. “This milestone brings the next-generation of high reliability power solutions for mission-critical defense and space applications that utilize the superior material properties of wide bandgap semiconductors to customers serving the growing aerospace market.”
The first three product variations in the new radiation hardened GaN transistor line are 100 V, 52 A devices featuring an industry leading (R DS(on) (drain source on resistance) of 4 mΩ (typical) and total gate charge (Qg) of 8.8 nC (typical). Encased in robust hermetically sealed ceramic surface mount packages, the transistors are Single Event Effect (SEE) hardened up to LET (GaN) = 70 MeV.cm2/mg (Au ion). Two devices, which are not JANS certified, are screened to a Total Ionizing Dose (TID) of 100 krad and 500 krad. The third device, screened to 500 krad TID, is qualified to the rigorous JANS Specification MIL-PRF-19500/794.
Infineon is the first company in the industry to achieve the DLA JANS certification for fully internally manufactured GaN power devices. DLA JANS certification requires rigorous levels of screening and Quality of Service Class Identifiers to ensure the performance, quality, and reliability required for space flight applications – making Infineon a leader in GaN for high reliability applications. Infineon is also running multiple lots prior to full JANS production release to ensure long term manufacturing reliability.
Engineering samples and evaluation boards are available immediately with the final JANS device being released in the summer of 2025. Additional JANS parts are launching soon, expanding available voltages and currents to enable customers greater flexibility in creating efficient and reliable designs. For more information, visit www.infineon.com/radhardgan
Original – Infineon Technologies
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MCC introduced the 100V P-channel MOSFET that optimizes space without sacrificing performance. Housed in a compact DFN3333 package, MCG085P10 utilizes innovative trench power LV MOSFET technology to maximize reliability and efficiency.
From its exceptionally low 85mΩ on-resistance that reduces voltage drops and heat generation to low conduction losses, this component is well-suited for diverse applications. Requiring lower gate drive voltages, our MOSFET ensures stable operation under harsh working conditions.
MCG085P10 also solves common challenges, including efficiency, heat management, and space constraints, offering engineers an edge in modern electronic design.
Features & Benefits:
- Trench Power LV MOSFET Technology: Enhances performance with reduced gate drive requirements and improved efficiency.
- Low On-Resistance: Boosts overall efficiency thanks to minimal voltage drop and heat generation during operation.
- Low Conduction Losses: Increases energy savings and improves thermal performance in power applications.
- Compact DFN3333 Package: Enables smaller, more innovative electronic designs.
Original – Micro Commercial Components
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Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched four 650V silicon carbide (SiC) MOSFETs, equipped with its latest 3rd generation SiC MOSFET chips and housed in a compact DFN8×8 package, suitable for industrial equipment, such as switched-mode power supplies and power conditioners for photovoltaic generators. Volume shipments of the four devices, “TW031V65C,” “TW054V65C,” “TW092V65C,” and “TW123V65C,” start today.
The new products are the first 3rd generation SiC MOSFETs to use the small surface-mount DFN8×8 package, which reduces volume by more than 90% compared to lead-inserted packages, such as TO-247 and TO-247-4L(X) and improves equipment power density. Surface mounting also allows use of parasitic impedance components smaller than those of lead-inserted packages, reducing switching losses.
DFN8×8 is a 4-pin package, allowing use of a Kelvin connection of its signal source terminal for the gate drive. This reduces the influence of inductance in the source wire within the package, achieving high-speed switching performance; in the case of TW054V65C, it reduces turn-on loss by approximately 55% and turn-off loss by approximately 25% compared to current Toshiba products, helping to reduce power loss in equipment.
Toshiba will continue to expand its lineup to contribute to improved equipment efficiency and increased power capacity.
Applications
- Switched mode power supplies in servers, data centers, communications equipment, etc.
- EV charging stations
- Photovoltaic inverters
- Uninterruptible power supplies
Features
- DFN8×8 surface-mount package. Enables equipment miniaturization of and automated assembly. Low switching loss.
- Toshiba’s 3rd generation SiC MOSFETs
- Good temperature dependence of drain-source On-resistance by optimization of drift resistance and channel resistance ratio
- Low drain-source On-resistance×gate-drain charges
- Low diode forward voltage: VDSF=-1.35V(typ.) (VGS=-5V)
Original – Toshiba
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Littelfuse, Inc. announced the release of the IXD0579M high-speed gate driver IC. The IXD0579M simplifies board design, saves space, and offers a reliable, multiple-source alternative for driving N-channel MOSFETs or IGBTs in half-bridge configurations.
Designed to operate across a wide 6.5 V to 18 V supply range, the IXD0579M integrates a bootstrap diode and a series current limit resistor—components typically requiring discrete placement—into a single compact 3×3 mm² TDFN-10 package. This innovative integration reduces BOM count and cost while enabling easier PCB layout.
Key Product Features and Benefits
- High Drive Capability: 1.5 A source and 2.5 A sink output drive current
- Wide Supply Voltage Range: Operates from 6.5 V to 18 V with UVLO protection
- Integrated Bootstrap Circuitry: On-chip bootstrap diode and resistor simplify design
- Logic Level Compatibility: Interfaces directly with TTL and CMOS levels (down to 3.3 V)
- Cross-Conduction Protection: Prevents simultaneous high-side and low-side conduction
- Ultra-Low Standby Current: Less than 1 µA standby mode for energy efficiency
- Thermal Robustness: Operates from −40 °C to +125 °C
“With the IXD0579M, Littelfuse is offering a direct drop-in replacement for popular industry-standard gate driver ICs,” said June Zhang, Product Manager, Integrated Circuits Division at Littelfuse. “This gives customers greater flexibility to secure supply while simplifying their circuit design with an integrated solution.”
The IXD0579M is the first Littelfuse gate driver to feature both an integrated bootstrap diode and current limit resistor, expanding the company’s growing portfolio of power control solutions. As the eleventh high-side/low-side driver released by Littelfuse, it strengthens the company’s position in serving “multiple source” markets that demand performance and supply chain continuity.
Engineered for high-frequency switching, the IXD0579M is ideal for:
- Brushless DC (BLDC) motor drives
- Battery-powered hand tools
- DC-DC converters and power supplies
- General industrial and electrical equipment
It’s compact footprint and robust performance make it well-suited for space-constrained designs and high-efficiency power stages.
Original – Littelfuse
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Infineon Technologies AG has introduced the CoolGaN™ bidirectional switch (BDS) 650 V G5, a gallium nitride (GaN) switch capable of actively blocking voltage and current in both directions. Featuring a common-drain design and a double-gate structure, it leverages Infineon’s robust gate injection transistor (GIT) technology to deliver a monolithic bidirectional switch, enabled by Infineon’s CoolGaN technology. The device serves as a highly efficient replacement for traditional back-to-back configurations commonly used in converters.
The bidirectional CoolGaN switch offers several key advantages for power conversion systems. By integrating two switches in a single device, it simplifies the design of cycloconverter topologies, enabling single-stage power conversion, eliminating the need for multiple conversion stages. This leads to improved efficiency, increased reliability, and a more compact design. BDS-based microinverters also benefit from higher power density and reduced component count, which simplifies manufacturing and reduces costs. Additionally, the device supports advanced grid functions such as reactive power compensation and bidirectional operation.
As a result, this solution holds significant potential across a wide range of applications, including:
Microinverters: The CoolGaN bidirectional switch enables simpler and more efficient microinverter designs, reducing both size and cost. This makes microinverters more attractive for residential and commercial solar installations.
Energy Storage Systems (ESS): In ESS applications such as battery chargers and dischargers, the switch allows for more efficient and reliable energy storage and release.
Electric Vehicle (EV) Charging: In EV charging systems, the BDS switch supports faster, more efficient charging while also enabling vehicle-to-grid (V2G) functionality, where energy stored in the vehicle battery can be fed back into the grid.
Motor control: The CoolGaN BDS is ideal for use in Current Source Inverters (CSI) for industrial motor drives. Compared to traditional Voltage Source Inverters (VSI), CSIs offer benefits such as:
- Producing a sinusoidal output voltage, which supports longer cable runs, reduced losses, and improved fault tolerance.
- Replacing the DC-link capacitor with an inductor, improving high-temperature performance and short-circuit protection.
- Higher efficiency at partial loads, lower EMI, inherent buck-boost capability for voltage variation, and scalability for parallel operation.
These features make CSIs a more robust and efficient alternative for industrial motor applications.
AI data centers: In AI server power supplies, bidirectional switches like CoolGaN support higher switching frequencies and power density in architectures such as Vienna rectifiers and H4 PFCs. A single CoolGaN BDS can replace two conventional switches, reducing component count, cost, size, and overall power losses.
The CoolGaN bidirectional switch (BDS) 650 V G5 is available for ordering now as well as samples of the 110 mΩ product. More information is available here.
Original – Infineon Technologies
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To enable the next generation of solid-state power distribution systems, Infineon Technologies AG is expanding its silicon carbide (SiC) portfolio with the new CoolSiC™ JFET product family. The new devices deliver minimized conduction losses, solid turn-off capability, and high robustness, making them ideal for advanced solid-state protection and distribution.
With robust short-circuit capability, thermal stability in linear mode, and precise overvoltage control, CoolSiC JFETs enable reliable and efficient system performance in a wide range of industrial and automotive applications, including solid-state circuit breakers (SSCBs), AI data center hot-swaps, eFuses, motor soft starters, industrial safety relays, and automotive battery disconnect switches.
“With CoolSiC JFET, we are addressing the growing demand for smarter, faster, and more robust power distribution systems,” says Dr. Peter Wawer, Division President Green Industrial Power at Infineon Technologies. “This application-driven power semiconductor technology is specifically designed to provide our customers with the tools they need to solve the complex challenges in this rapidly evolving space. We are proud to introduce devices that achieve best-in-class R DS(ON), setting a new standard for SiC performance and reaffirming Infineon’s leadership in the field of wide-bandgap technology.”
The first generation of CoolSiC JFETs features ultra-low R DS(ON) starting at 1.5 mΩ (750 V BDss) and 2.3 mΩ (1200 V BDss), significantly reducing conduction losses. The bulk-channel optimized SiC JFET offers high robustness under short-circuit and avalanche failure conditions. Housed in a Q-DPAK top-side cooled package, the devices support easy paralleling and scalable current handling, enabling compact, high-power systems with flexible layout and integration options. Their predictable switching behavior under thermal stress, overload and fault conditions provides maximum long-term reliability in continuous operation.
To meet the thermal and mechanical challenges of harsh application environments, CoolSiC JFETs leverage Infineon’s advanced .XT interconnection technology with diffusion soldering. This significantly improves transient thermal impedance and robustness under pulsed and cyclic loads typical of industrial power systems. Tested and qualified under real-world operating conditions of solid-state power switches and based on the industry-standard Q-DPAK package, the devices enable quick and seamless design integration in both industrial and automotive applications.
Engineering samples of the new CoolSiC JFET family will be available later in 2025, with volume production starting in 2026. The product portfolio will be further expanded with a variety of packages and modules. The product family has been successfully demonstrated at the Infineon booth at PCIM Europe 2025 in Nuremberg. More information is available at www.infineon.com/jfet.
Original – Infineon Technologies
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Navitas Semiconductor introduced a new level of reliability to meet the system lifetime requirements of the most demanding automotive and industrial applications. Navitas’ latest generation of 650 V and 1200 V ‘trench-assisted planar’ SiC MOSFETs combined with an optimized, HV-T2PaK top-side cooled package, delivers the industry’s highest creepage of 6.45 mm to meet IEC-compliance for applications up to 1200V.
Navitas’ HV-T2PaK SiC MOSFETs significantly increase system-level power density and efficiency while improving thermal management and simplifying board-level design and manufacturability. Target applications include EV on-board chargers (OBC) & DC-DC converters, data-center power supplies, residential solar inverters & energy storage systems (ESS), EV DC fast chargers, and HVAC motor drives.
AEC-Q101 is an automotive industry standard developed by the Automotive Electronics Council (AEC) to establish common part-qualification and quality-system standards. Navitas has created an industry-first benchmark, ‘AEC-Plus’*, indicating parts qualified above and beyond the existing AEC-Q101 and JEDEC product qualification standards. This new benchmark showcases Navitas’ deep understanding of system-level lifetime requirements and a strong commitment to enabling rigorously designed and validated products for demanding mission profiles in automotive and industrial applications.
The ‘AEC-Plus’ qualification standards extend further into rigorous multi-lot testing and qualification. Key additions to the existing AEC-Q101 requirements include:
- Dynamic reverse bias (D-HTRB) & dynamic gate switching (D-HTGB) to represent stringent application mission profiles
- Over 2x longer power & temperature cycling
- Over 3x longer duration for static high-temperature, high-voltage tests (e.g. HTRB, HTGB).
- 200°C TJMAX qualification for overload operation capability
Navitas’ HV-T2PaK top-side cooled package, in an industry-standard compact form factor (14 mm x 18.5 mm), is optimized with an innovative groove design in the package mold compound that extends the creepage to 6.45 mm without reducing the size of the exposed thermal pad and ensuring optimal heat dissipation. In addition, the exposed thermal pad has a nickel, nickel-phosphorus (NiNiP) plating, as opposed to tin (Sn) plating from existing TSC package solutions, which is critical to preserving the post-reflow surface planarity of the exposed pad and ensuring thermally efficient and reliable attachment to the thermal interface material (TIM).
Enabled by over 20 years of SiC technology innovation leadership, Navitas’ GeneSiC™ ‘trench-assisted planar SiC MOSFET technology’ offers up to 20% lower on-resistance under in-circuit operation at high temperatures compared to competition and superior switching figure-of-merits which result in the lowest power losses across a wider operating range. All GeneSiC™ SiC MOSFETs have the highest-published 100%-tested avalanche capability, excellent short-circuit withstand energy, and tight threshold voltage distributions for easy paralleling.
The initial HV-T2PaK portfolio includes 1200 V SiC MOSFETs with on-resistance ratings ranging from 18 mΩ to 135 mΩ and 650 V SiC MOSFETs with on-resistance ratings ranging from 20 mΩ to 55 mΩ. Lower on-resistance (<15 mΩ) SiC MOSFETs in HV-T2PaK package will be announced later in 2025.
Original – Navitas Semiconductor
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Nexperia announced a range of highly efficient and robust automotive qualified silicon carbide (SiC) MOSFETs with RDS(on) values of 30, 40 and 60 mΩ. These devices (NSF030120D7A0-Q, NSF040120D7A1-Q, NSF060120D7A0-Q), which deliver industry-leading figures-of-merit (FoM), were previously offered in industrial grade and have now been awarded AEC-Q101 certification.
This makes them suitable for automotive applications like onboard chargers (OBC) and traction inverters in electric vehicles (EV) as well as for DC-DC converters, heating ventilation and air-conditioning systems (HVAC). These switches are housed in the increasingly popular surface mounted D2PAK-7 package which is more suitable for automated assembly operations than through-hole devices.
RDS(on) is a critical performance parameter for SiC MOSFETs as it impacts conduction losses. However, concentrating on the nominal value, neglects the fact that it can increase by more than 100% as device operating temperatures rise, resulting in considerable rise of conduction losses. The temperature stability is even more critical when SMD package technologies are used compared to through-hole technology since devices are cooled through the PCB.
Nexperia identified this as a limiting factor in the performance of many currently available SiC devices and leveraged the features of its innovative process technology to ensure that its new SiC MOSFETs offer industry-leading temperature stability, with the nominal value of RDS(on) increasing by only 38% over an operating temperature range from 25 °C to 175 °C. This feature enables customers to address higher output power in their applications achieved with a higher nominal 25°C rated RDS(on) from Nexperia compared to other vendors without sacrificing performance.
“This feature allows to get more power out of the selected Nexperia SiC MOSFET devices compared to similarly rated RDS(on) devices from other vendors, delivering a clear cost advantage for customers on semiconductor level. Additionally, relaxed cooling requirements, more compact passive components, and higher achievable efficiency allow customers more degrees of freedom in their design and lower total cost of ownership. We’re especially excited that these products are now available for the automotive market, where their performance and efficiency benefits can make a real difference in next-generation vehicle designs”, says Edoardo Merli, SVP and Head of Business Group Wide Bandgap, IGBT & Modules (WIM).
Nexperia is planning to release automotive-qualified versions of its 17 mΩ and 80 mΩ RDS(on) SiC MOSFETs in 2025.
Original – Nexperia
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SemiQ Inc has announced the expansion of its Gen3 SiC MOSFET offering, launching a 1200 V TSPAK-packaged series. SemiQ unveiled the new devices for the first time at PCIM 2025 in Nuremberg at Alfatec’s stand (Hall 4A, Booth109).
The four-strong series of Gen3 MOSFETs delivers continuous drain currents of between 27 and 101 A and pulsed drain current from 70 to 350 A, with device resistances (RDSon) ranging from 80 to 16 mΩ respectively.
All devices are operational to 175oC and have been tested to voltages greater than 1400 V, undergoing wafer-level burn-in testing (WLBI) and UIL avalanche testing up to 800 mJ (RDSon = 16 mΩ, 160 mJ for the 80 mΩ device).
The easy-to-parallel devices implement top-side cooling and an isolated thermal path with a ceramic isolated back paddle. The package includes a driver source kelvin pin for gate driving as well as a gate pin, 5 source pins and a drain tab.
The TSPAK MOSFETs offer a lower capacitance, reduced switching losses, longer clearance distance and higher overall system efficiency. SemiQ is targeting the devices at a range of industrial and EV applications, including solar inverters and energy storage, induction heating and welding, EV charging stations and on-board chargers, motor drives, high-voltage DC/DC converters and UPS/switch mode power supplies.
Dr. Timothy Han, President at SemiQ said: “The launch of the TSPAK Gen3 SiC MOSFET family enables the creation of higher power density supplies, at a lower system cost as well as more compact system designs at large scale.”
All devices in the series are housed in a 18.6 x 14.0 x 3.5 mm TSPAK package, have a zero gate voltage drain current of 0.1 µA, a -10/10 nA gate-source leakage current and a 3.5 V gate threshold voltage (cited characteristics measured at 25oC). The series is available immediately.
The series’ cycle times range from 49 ns (80 mΩ MOSFET) to 114 ns (16 mΩ), and the devices have total switching energy of between 153 µJ (80 mΩ MOSFET) and 1565 µJ (16 mΩ). Key specifications are shown in the table below – all characteristics shown have been measured at 25oC.
GP3T016A120TS GP3T020A120TS GP3T040A120TS GP3T080A120TS Drain source voltage VDS 1200 V 1200 V 1200 V 1200 V Drain source on resistance RDSon 16 mΩ 18 mΩ 38 mΩ 80 mΩ Continuous drain current ID 101 A 89 A 50 A 27 A Pulse drain current ID.pulse 350 A 280 A 140 A 70 A Power dissipation Ptot 273 W 250 W 158 W 102 W Thermal resistance RthJC 0.49°C/W 0.53°C/W 0.83°C/W 1.25°C/W Turn on switching energy EON 1333 µJ 986 µJ 639 µJ 117 µJ Turn off switching energy EOFF 232 µJ 159 µJ 101 µJ 36 µJ Turn on delay tDon 19 ns 80 ns 15 ns 10 ns Rise time tR 13 ns 10 ns 9 ns 3 ns Turn off delay tDoff 64 ns 60 ns 32 ns 20 ns Fall time tF 18 ns 17 ns 10 ns 16 ns 1200V Gen3 SiC TSPAK MOSFET series is available in parts: GP3T016A120TS (16mΩ, 101A), GP3T020A120TS (18mΩ, 89A), GP3T040A120TS (38mΩ, 50A), and GP3T080A120TS (80mΩ, 27A).
Original – SemiQ
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WeEn Semiconductors showcased its silicon carbide (SiC) MOSFETs and Schottky Barrier Diodes (SBDs) in highly thermally efficient TSPAK packages at this year’s PCIM Expo conference and trade fair. The new packages enable engineers to improve efficiency, reduce form factors, extend reliability and lower EMI across a variety of high-power applications.
Providing effective heat dissipation from a thermal pad on the surface of the SiC device rather than via a PCB substrate, the company’s top-side cooling TSPAK technologies can reduce J-A (junction-to-ambient) thermal resistance by up to 16% compared to conventional devices. As a result, the packages help to simplify thermal management design, lower losses and increase power density.
By minimizing or eliminating the need for complex PCB cooling, TSPAK devices reduce component count and drive down system costs. In addition, the ability to support a greater number of power cycle extends reliability, while reduced EMI helps engineers to simplify system EMC compliance. EMI reduction derives from the fact that the circulating current that creates the magnetic field is no longer blocked by the thermal vias necessary in conventional bottom-side cooling designs and can return to the source directly, minimizing magnetic interference.
WeEn’s TSPAK SiC technologies are ideally suited to on-board chargers and high-voltage-to-low-voltage DC-DC converters in electric vehicles (EVs), automotive HVAC compressors, vehicle charging stations, photovoltaic (PV) renewable energy systems and power supplies for computing and telecom servers. TSPAK MOSFETs offer voltage ratings from 650 V to 1700 V and on resistance (RDS(ON)) ratings from 20 to 150mΩ. TSPAK SBDs are available with voltages from 650 V to 1200 V and current ratings of 10 A to 40 A.
All products are available in industrial grade and automotive grade variants.
Original – WeEn Semiconductors
