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Cambridge GaN Devices (CGD) and Qorvo® have partnered to bring together industry-leading motor control and power efficiency technologies in the PAC5556A + ICeGaN® evaluation kit (EVK). This collaboration combines Qorvo’s high-performance BLDC/PMSM motor controller/driver and CGD’s easy-to-use ICeGaN ICs in a board that significantly improves motor control applications.
ANDREA BRICCONI | CHIEF MARKETING OFFICER, CGD
“By combining industry-leading solutions from our two technology-strong companies in this EVK, we are enabling the development of compact, energy-efficient systems with high power density. Unlike other GaN implementations, ICeGaN technology easily interfaces with Qorvo’s PAC5556A motor control IC for seamless high performance in BLDC and PMSM applications.”JEFF STRANG | GENERAL MANAGER, POWER MANAGEMENT BUSINESS UNIT, QORVO
“Wide-bandgap semiconductors like GaN and SiC are being integrated into motor control applications for the power density and efficiency advantages they offer. CGD’s ICeGaN technology delivers ease of use and reliability – two critical factors for motor control and drive designers. Customers are responding enthusiastically when they experience the power of GaN combined with our highly integrated PAC5556A 600V BLDC motor control solution.”By employing CGD’s latest-generation P2 ICs, the PAC5556AEVK2 evaluation kit with 240 mΩ ICeGaN achieves up to 400W peak performance without a heatsink, whilst the PAC5556AEVK3 with 55 mΩ ICeGaN hits 800W peak with minimal airflow cooling.
ICeGaN’s efficiency gains result in reduced power loss, increased power availability, and minimized heat dissipation, enabling smaller and more reliable systems. Because ICeGaN integrates essential current sense and Miller clamp elements, gate driver design is simplified and BOM costs are reduced. This makes the solution easy to implement and price-competitive, as well as high performance.
The PAC5556A + CGD GaN EVKs offer higher torque at low speeds and precise control, making them ideal for white goods, ceiling fans, refrigerators, compressors and pumps. Target markets include industrial and home automation, especially where compact, high-efficiency motor control systems are required. PAC5556AEVK2 and PAC5556AEVK3 are now available to order at Qorvo’s website.
Original – Cambridge GaN Devices
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Efficient Power Conversion (EPC) announced that the Full Commission of the U.S. International Trade Commission (ITC) has affirmed the ITC’s initial determination that Innoscience infringed EPC’s foundational patent for GaN technology, which is core to applications involving artificial intelligence, satellites, rapid chargers, humanoid robots, and autonomous driving, among others. The decision imposes a ban on Innoscience (Zhuhai) Technology Co., Ltd. and its affiliates (Innoscience) from importing GaN-related products into the United States without a license from EPC.
This milestone decision marks the first successfully litigated U.S. patent dispute involving GaN-based wide bandgap semiconductors and solidifies EPC’s position as a leading developer of these next-generation devices, which are significantly more efficient, faster, and smaller than traditional, silicon-based technology. The decision also paves the way for EPC to expand access to its IP through licensing agreements with potential partners and customers around the world.
“After pouring nearly two decades and immense resources into developing our uniquely valuable intellectual property portfolio, this is a tremendous victory for EPC and a major win for fair competition globally, which is critical to the success of next-generation technological advances. We are grateful to the ITC for their diligent work in recognizing the validity of our patents and Innoscience’s infringement,” said Alex Lidow, CEO and Co-Founder of EPC. “EPC will continue to vigorously defend our IP against unfair use to ensure that we can continue to innovate and provide our customers with the cutting-edge technologies needed to help power our future.”
The ITC’s most recent decision is the fourth time that EPC’s IP rights have been affirmed against Innoscience in the past six months. EPC initially filed the infringement claim against Innoscience in the ITC in May 2023. In response, Innoscience challenged the validity of the EPC patents at issue in the U.S., as well as EPC’s counterpart patents in China.
The China National Intellectual Property Administration upheld the validity of EPC’s counterpart patents in April and May 2024. The ITC’s initial determination in July 2024 similarly confirmed the validity of the challenged patents, and also found that Innoscience infringed EPC’s foundational patent, U.S. Patent No. 8,350,294. The ITC’s final determination is subject to a 60-day Presidential review period, expiring on January 6, 2025.
Original – Efficient Power Conversion
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Stellantis N.V. and Infineon Technologies AG will work jointly on the power architecture for Stellantis’ electric vehicles to support Stellantis’ ambition of offering clean, safe and affordable mobility to all.
To support this, the companies have signed major supply and capacity agreements that will serve as the foundation for the planned collaboration to develop the next generation of power architecture, including:
- Infineon’s PROFET™ smart power switches, which will replace traditional fuses, reduce wiring and enable Stellantis to become one of the first automakers to implement intelligent power network management.
- Silicon carbide (SiC) semiconductors, which will support Stellantis in its efforts to standardize its power modules, improve the performance and efficiency of EVs while also reducing costs.
- AURIX TM microcontrollers, which target the first generation of the STLA Brain zonal architecture.
Stellantis and Infineon are also in the process of extending their cooperation with the implementation of a Joint Power Lab to define the next-generation scalable and intelligent power architecture enabling Stellantis’ software-defined vehicle.
“As outlined in our strategic plan, Dare Forward 2030, we are securing the supply of crucial semiconductor solutions required to continue our transition to an electrified future leveraging innovative E/E architectures for our next-generation platforms,” said Maxime Picat, Stellantis Chief Purchasing and Supplier Quality Officer.
“Infineon is now entering a collaboration and innovation partnership with Stellantis,” said Peter Schiefer, President of Infineon’s Automotive Division. “As the world’s leading automotive semiconductor vendor, we bring our product-to-system expertise and dependable electronics to the table. Our semiconductors drive the decarbonization and digitalization of mobility. They increase the efficiency of cars and enable software-defined architectures that will significantly improve the user experience.”
With the world`s most cost-competitive SiC fab in Kulim, Malaysia, the upcoming 300-millimeter ”Smart Power Fab” in Dresden, Germany, and the joint venture with TSMC and partners (ESMC) as well as accompanying supply agreements with foundry partners, Infineon is ready to fully meet market demand for automotive semiconductor solutions. According to the market research company TechInsights, Infineon is the global number one supplier of automotive microcontrollers with a market share of about 29 percent of the global automotive microcontroller market.
Original – Infineon Technologies
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LATEST NEWS / PRODUCT & TECHNOLOGY / SiC / WBGSTMicroelectronics Released an Advanced Galvanically Isolated Gate Drivers for IGBTs and SiC MOSFETs
November 7, 2024
2 Min ReadSTMicroelectronics’ STGAP3S family of gate drivers for silicon-carbide (SiC) and IGBT power switches combines ST’s latest robust galvanic isolation technology with optimized desaturation protection and flexible Miller-clamp architecture.
Featuring reinforced capacitive galvanic isolation between the gate-driving channel and the low-voltage control and interface circuitry, the STGAP3S withstands 9.6kV transient isolation voltage (VIOTM) with 200V/ns common-mode transient immunity (CMTI). With its state-of-the-art isolation, the STGAP3S enhances reliability in motor drives for industrial applications such as air conditioning, factory automation, and home appliances. The new drivers are also used in power and energy applications including charging stations, energy storage systems, power-factor correction (PFC), DC/DC converters, and solar inverters.
The STGAP3S product family includes different options with 10A and 6A current capability, each of them available with differentiated Under Voltage Lock-Out (UVLO) and desaturation intervention thresholds. This helps designers select the best device to match the performance of their chosen SiC MOSFET or IGBT power switches.
The Desaturation protection implements an overload and short-circuit protection for the external power switch providing the possibility to adjust the turn-off strategy using an external resistor to maximize the protection turn-off speed while avoiding excessive overvoltage spikes. The undervoltage-lockout protection prevents turn-on with insufficient drive voltage.
The driver’s integrated Miller Clamp architecture provides a pre-driver for an external N-channel MOSFET. Designers can thus leverage flexibility to select a suitable intervention speed that prevents induced turn-on and avoids cross conduction.
The available device variants allow a choice of 10A sink/source and 6A sink/source drive-current capability for optimum performance with the chosen power switch with desaturation-detection and UVLO thresholds optimized for IGBT or SiC technology. The fault conditions of desaturation, UVLO and overtemperature protection are notified with two dedicated open drain diagnostic pins.
Original – STMicroelectronics
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Navitas Semiconductor has announced the world’s first 8.5 kW power supply unit (PSU), powered by GaN and SiC technologies to achieve 98% efficiency, for next-generation AI and hyperscale data centers.
The AI-optimized 54V output PSU complies with Open Compute Project (OCP) and Open Rack v3 (ORv3) specifications and utilizes high-power GaNSafe and Gen-3 Fast SiC MOSFETs configured in 3-phase interleaved PFC and LLC topologies, to ensure the highest efficiency and performance, with lowest component count. The PSU’s shift to a 3-phase topology for both the PFC and LLC (vs. 2-phase topologies used by competing PSUs) enables the industry’s lowest ripple current and EMI.
Furthermore, the PSU reduces the number of GaN and SiC devices by 25% compared with the nearest competing system, which reduces the overall cost. The PSU has an input voltage range of 180 to 264 Vac, a standby output voltage of 12 V, and an operating temperature range of -5oC to 45oC. Its hold-up time at 8.5 kW is 10 ms, with 20 ms possible through an extender.
The 3-Phase LLC topology is enabled by high-power GaNSafe, which is specifically created for demanding, high-power applications, such as AI data centers and industrial markets. Navitas’ 4th generation integrates control, drive, sensing, and critical protection features that enable unprecedented reliability and robustness. GaNSafe is the world’s safest GaN with short-circuit protection (350ns max latency), 2kV ESD protection on all pins, elimination of negative gate drive, and programmable slew rate control. All these features are controlled with 4-pins, allowing the package to be treated like a discrete GaN FET, requiring no VCC pin. Suitable for applications from 1 kW to 22 kW, 650 V GaNSafe in TOLL and TOLT packages are available with a range of RDS(ON)MAX from 25 to 98 mΩ.
The 3-Phase interleaved CCM TP-PFC is powered by Gen-3 Fast SiC MOSFETs with ‘trench-assisted planar’ technology, which has been enabled by over 20 years of SiC innovation leadership and offers world-leading performance over temperature, delivering cool-running, fast-switching, and superior robustness to support faster charging EVs and up to 3x more powerful AI data centers.
“This complete wide bandgap solution of GaN and SiC enables the continuation of Navitas’ AI power roadmap which enables this 8.5kW and plans to drive to 12kW & higher in the near-term”, said Gene Sheridan, CEO and co-founder of Navitas. “As many as 95% of the world’s data centers cannot support the power demands of servers running NVIDIA’s latest Blackwell GPUs, highlighting a readiness gap in the ecosystem. This PSU design directly addresses these challenges for AI and hyperscale data centers.”
The PSU will be on display for the first time at Electronica 2024 (Hall C 3, booth 129, November 12th– 15th).
Original – Navitas Semiconductor
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SemiQ will exhibit its latest SiC power solutions for high-voltage applications at electronica 2024, the world’s leading electronics trade fair and conference, in Munich from November 12-15.
Visitors to SemiQ will be able to explore the company’s latest advancements in high-voltage technology. This includes the debut of the next generation of 1200V SiC MOSFETs and SemiQ’s QSiC portfolio of ultra-efficient modules, supporting innovations in EVs, renewable energy, motor drives, medical power supplies and high-power solar applications.
Engineered with high-performance ceramics, QSiC™ MOSFET modules offer industry-leading reliability in a compact form factor and have been designed to specifically meet the stringent demands for high-power, high-frequency applications. Each module undergoes wafer-level gate burn-in testing to ensure high-quality gate oxide and stable gate threshold voltage.
Dr. Timothy Han, President of SemiQ said: “Our solutions significantly enhance the performance and efficiencies necessary to propel the industry forward, unlocking yet more high-power applications. We look forward to demonstrating how these innovative technologies will pave the way for fresh designs and advancements in the industry.”
Electronica will take place at the Messe München in Munich, Germany, from November 12-15, 2024. SemiQ’s stand is at Alfatec’s booth in Hall A5, Booth 421.
Original – SemiQ
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EPC Space announced the launch of HEMTKY product line.
A HEMTKY is a HEMT, High Electron Mobility Transistor, with an embedded Schottky diode. The presence of an antiparallel Schottky diode in the HEMTKY structure minimizes third quadrant conduction losses absent GaN HEMT synchronous drive. Notable advantages are:
- Predictable conduction losses, no reverse recovery charge
- Reduced system sensitivity to half-bridge deadtime variance
- Reduced negative voltage stress on gate drivers
For 500-unit quantities, engineering models are priced at $212 USD each, while space level units are priced at $315 USD each.
EPC Space provides revolutionary high-reliability radiation-hardened enhancement-mode gallium nitride power management solutions for space and other harsh environments. Radiation hardened GaN-based power devices address critical spaceborne environments for applications such as power supplies, motor drives, ion thrusters, and more. eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.
Original – EPC Space
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Nexperia announced that it has entered into a strategic partnership with KOSTAL, a leading automotive supplier, which will enable it to produce wide bandgap (WBG) devices that more closely match the exacting requirements of automotive applications. Under the terms of this partnership, Nexperia will supply, develop, and manufacture WBG power electronics devices which will be designed-in and validated by Kostal. The collaboration will initially focus on the development of SiC MOSFETs in topside cooled (TSC) QDPAK packaging for onboard chargers (OBC) in electric vehicles (EV).
KOSTAL Automobil Elektrik, with over a century of experience, is a key player in the global automotive industry. Nearly one in every two cars worldwide is equipped with KOSTAL’s products, including more than 4.5 million onboard chargers, contributing to advancements in electromobility. Ranked among the top 100 automotive suppliers globally, KOSTAL is recognized for its innovative, reliable, and cost-optimized solutions. Its long-standing partnerships with customers and employees reflect the company’s commitment to quality and collaboration.
“Nexperia has been a trusted supplier of silicon components to KOSTAL for many years and is delighted to enter into this strategic partnership that will now extend to wide bandgap devices”, according to Katrin Feurle, Senior Director and Head of SiC Discretes & Modules. “KOSTAL will assist in validating our devices in its charging applications, thereby providing us with the type of invaluable ‘real-world’ data that will allow us to further enhance their performance”.
“KOSTAL is extending its’ strategic SiC supply portfolio to support our growth path towards 2030 with a special dedication on E-Mobility applications for onroad and offroad applications” states Dr. Georg Mohr, Executive VP Purchasing & Supply Chain of the KOSTAL Group. “Under this strategic partnership, which reinforces our long- standing customer-supplier relationship, KOSTAL will leverage Nexperia’s expertise in wide bandgap technology, particularly their SiC MOSFETs, which we believe are among the best in the market. By sharing our insights from real-world EV charging applications, we aim to contribute to the development of even more optimized and tailored SiC devices that meet the specific demands of our next-generation solutions.”
Nexperia is among the few companies that is offering a comprehensive range of WBG semiconductor technologies, including SiC diodes and MOSFETs, as well as GaN e-mode and d-mode devices, alongside its established silicon portfolio. With a strong commitment to expanding its commercial WBG offerings, Nexperia is focused on delivering the most suitable products to meet the needs of an increasing range of applications. The company’s focus is to support the responsible use of electrical energy through innovative solutions. Nexperia continues to develop technologies that address the growing demand for efficiency and sustainability in power management.
Original – Nexperia
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Cambridge GaN Devices (CGD) will exhibit at Electronica which runs from November 12-15, 2024 at the Messe München, Munich, Germany. This will be the second time that the company has exhibited at the world’s leading trade fair and conference for electronics, marking the company’s position as a leader in delivering gallium-nitride power ICs which are easy to use and very reliable.
ANDREA BRICCONI | CHIEF MARKETING OFFICER, CGD
“Since our first appearance at Electronica, CGD has made remarkable steps. We have introduced our P2 series ICeGaN® ICs that feature RDS(on) levels down to 25 mΩ, supporting multi kW power levels with the highest efficiency. We have announced a deal with TSMC, the leading IC fabrication house in the world which ensures quality and supply of our innovative power devices. Also, studies by leading academic research establishment, Virginia Tech University, have demonstrated that our ICeGaN GaN technology is more reliable and robust than other GaN platforms. GaN is now available for use at higher power levels, and at Electronica we are expecting to meet with designers who are eager to take advantage of the efficiency and power density benefits that GaN can bring to their latest designs.”During the show, CGD will make two presentations:
- November 12, 13:20 – 14:10, Booth A5.351: SiC & GaN Technologies – Exploring Advancements, Addressing Challenges CGD’s CTO and co-founder, Professor Florin Udrea will join a panel of GaN experts for a Panel Discussion moderated by Maurizio Di Paolo Emilio, Editor-in-Chief, Power Electronics News.
- November 12, 16:10-16:35, Power Electronics Forum: ICeGaN as a smart high voltage platform for high power industrial and automotive applications presented by Professor Florin Udrea.
The power devices field has undergone significant change due to the emergence of Wide Band Gap semiconductors, particularly Gallium Nitride (GaN) and Silicon Carbide (SiC). Traditionally, GaN has been used for lower power consumer applications (e.g., power supplies), while SiC dominated the medium to high power markets, such as industrial (e.g., motor drives) and automotive applications (e.g., traction inverters).
SiC’s superior scaling of on-state resistance at high voltages gives it an edge above 1.2 kV, but GaN is now competing with SiC at 650V for all power levels. ICeGaN®, featuring sensing and protection functions, surpasses discrete SiC in terms of robustness and ease of paralleling, offering notable advantages for 650V high-power applications. Additionally, with the rise of multi-level topologies for traction inverters, GaN may challenge SiC’s 1.2 kV market. Ultimately, both technologies have a bright future, with overlap expected in high-power (10-500 kW) applications.
At Electronica, CGD will show a number of demos that employ ICeGaN, including:
- 3 kW totem-pole PFC evaluation board;
- High and low power QORVO motor drive evaluation kits developed in collaboration with CGD and utilising ICeGaN
- Half-bridge and full-bridge evaluation boards, plus an ICeGaN in parallel evaluation board;
- Single leg of a 3-phase 800 V automotive inverter demo board, developed in partnership with French public R&I institute, IFP Energies nouvelles (IFPEN);
- ICeGaN vs discrete GaN circuits comparison in half bridge (daughter cards) demo board.
- High-density USB-PD adaptor developed with Industrial Technology Research Institute (ITRI) of Taiwan
Original – Cambridge GaN Devices
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Infineon Technologies AG announced the launch of a new family of high-voltage discretes, the CoolGaN™ Transistors 650 V G5, further strengthening its Gallium Nitride (GaN) portfolio. Target applications for this new product family range from consumer and industrial switched-mode power supply (SMPS) such as USB-C adapters and chargers, lighting, TV, data center and telecom rectifiers to renewable energy and motor drives in home appliances.
The latest CoolGaN generation is designed as a drop-in replacement for the CoolGaN Transistors 600 V G1, enabling rapid redesign of existing platforms. The new devices provide improved figures of merit to ensure competitive switching performance in focus applications.
Compared to key competitors and previous product families from Infineon, the CoolGaN Transistors 650 V G5 offer up to 50 percent lower energy stored in the output capacitance (E oss), up to 60 percent improved drain-source charge (Q oss) and up to 60 percent lower gate charge (Q g). Combined, these features result in excellent efficiencies in both hard- and soft-switching applications. This leads to a significant reduction in power loss compared to traditional silicon technology, ranging from 20 to 60 percent depending on the specific use case.
These benefits allow the devices to operate at high frequencies with minimal power loss, resulting in superior power density. The CoolGaN Transitors 650 V G5 enable SMPS applications to be smaller and lighter or to increase the output power range in a given form factor.
The new high-voltage transistor product family offers a wide range of R DS(on) package combinations. Ten R DS(on) classes are available in various SMD packages, such as ThinPAK 5×6, DFN 8×8 , TOLL and TOLT. All products are manufactured on high-performance 8-inch production lines in Villach (Austria) and Kulim (Malaysia). In the future, CoolGaN will transition to 12-inch production. This will enable Infineon to further expand its CoolGaN capacity and ensure a robust supply chain in the GaN power market, which is expected to reach $2 billion by 2029, according to Yole Group.
A demo featuring the CoolGaN Transistors 650 V G5 will be showcased at electronica 2024 in Munich from November 12 to 15 (hall C3, booth 502).
Original – Infineon Technologies
