Toshiba Tag Archive

  • Toshiba Released a 4500 V1500 A Press Pack IEGT with Newly Developed Trench-Type Chips

    Toshiba Released a 4500 V/1500 A Press Pack IEGT with Newly Developed Trench-Type Chips

    2 Min Read

    Toshiba Electronic Devices & Storage Corporation has launched a press pack IEGT “ST1500GXH35A” with ratings of 4500 V/1500 A that employs newly developed trench-type IEGT chips for use in high-voltage converters such as DC power transmission systems and industrial motor controllers.

    The newly developed IEGT chips reduce collector-emitter saturation-voltage and improve shutdown tolerance, short-circuit tolerance and high-temperature tolerance.

    Therefore, compared with the existing product, the collector-emitter saturation voltage (VCE(sat)) of the new ST1500GXH35A has been reduced by approximately 26 % from 3.4 V to 2.5 V (typical). In addition, the new product features wide RBSOA by improving shutdown tolerance, and tests short-circuit tolerance at a measurement voltage of 3400 V.

    Furthermore, the junction temperature rating (Tj) has been increased from 125 °C to 150 °C (maximum) by improving the high-temperature tolerance of the diode.

    ST1500GXH35A helps to reduce the size and power consumption for high-voltage converters such as DC power transmissions, static VAR compensators, and industrial motor controllers.

    Applications

    • DC power transmissions
    • Static VAR compensators
    • Industrial motor controllers

    Features

    • Low-collector-emitter saturation: VCE(sat)=2.6 V (typ.) (VGE=15 V, IC=1500 A, Tj=150 °C)
    • Expanded RBSOA (reinforced for 3400 V of test voltage), tested short-circuit tolerance
    • Maximum junction temperature rating: Tj (max)=150 °C

    Original – Toshiba

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  • Toshiba Starts Volume Shipments of SmartMCD™ Series of Gate Driver ICs with Embedded Microcontroller

    Toshiba Starts Volume Shipments of SmartMCD™ Series of Gate Driver ICs with Embedded Microcontroller

    2 Min Read

    Toshiba Electronic Devices & Storage Corporation has started volume shipments of the SmartMCD™ Series of gate driver ICs with embedded microcontroller (MCU). The first product, “TB9M003FG“, is suitable for sensorless control of three-phase brushless DC motors used in automotive applications, including water and oil pumps, fans and blowers.

    TB9M003FG combines a microcontroller (Arm® Cortex®-M0), flash memory, power control functions and communications interface functions into a gate driver that controls and drives N-ch power MOSFETs for three-phase brushless DC motor drives.

    This integration will reduce system sizes and component counts while realizing advanced and complex motor control for a wide variety of automotive motor applications. The new product also incorporates Toshiba’s proprietary vector engine, hardware for sensorless sinewave control, reducing the load on the microcontroller, and the size of the software.

    A reference design using TB9M003FG, “Motor Driving Circuit for Automotive Body Electronics Using SmartMCD™”, is now available on Toshiba’s website.

    The expanding market for electric vehicles (xEV) requires electrification, component integration, downsized electronic control unit (ECUs), and quieter motors. In response, the new product contributes to downsizing of ECUs by integrating a microcontroller into the gate driver, and to quieter motors by using vector control.

    Original – Toshiba

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  • Toshiba Published a New Toshiba Group Policy on Diversity, Equity, Inclusion and Belonging

    Toshiba Published a New Toshiba Group Policy on Diversity, Equity, Inclusion and Belonging

    2 Min Read

    Toshiba Corporation announced a new Toshiba Group Policy on Diversity, Equity, Inclusion and Belonging (DEIB) that takes Diversity and Inclusion (D&I) initiatives promoted by the Group to a new level with the addition of Equity (E) and Belonging (B). The policy applies to all executives and employees of Toshiba Group in Japan and overseas.

    The addition of E represents fair provision of opportunities that allow all employees to take on challenges and flourish, so that all employees are able to maximize their abilities and contribute to the organization. B indicates realizing circumstances where each individual feels that, “As a member of the organization, I am in a place where I can make the most of myself,” leading to higher engagement, productivity, and employee retention.

    The policy summarizes an approach to DEIB closely attuned to the times. Toshiba Group will use it to foster a corporate culture in which all employees can turn their diversity into strengths, find fulfillment in working for the Group, and feel that they are growing by taking on various challenges while maximizing their individual capabilities.
     

    Toshiba Group Policy on Diversity, Equity, Inclusion and Belonging

    Since establishing an organization to promote D&I in 2004, under the direct control of the CEO, Toshiba Group has promoted D&I as part of the management strategy. Today, a close alignment of management goals and human resources policy is essential, and awareness of the importance of information disclosure on diversity and human capital is increasing globally. With the new policy, Toshiba Group intends to improve employee engagement and also to promote stakeholder understanding of the Group by communicating its basic stance on the participation of diverse human resources in an easy-to-understand manner.

    Guided by the basic commitment of “Committed to People, Committed to the Future,” Toshiba Group will further strengthen its efforts to promote diversity based on the DEIB policy, with the aim of achieving both employee and company growth.

    Toshiba Group DEIB Policy Website
    https://www.global.toshiba/ww/sustainability/corporate/performance/social/diversity.html

    Original – Toshiba

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  • Toshiba Started Mass Production of the Third Generation 1700 V SiC MOSFET Module

    Toshiba Started Mass Production of the Third Generation 1700 V SiC MOSFET Module

    2 Min Read

    Toshiba Electronic Devices & Storage Corporation has started mass production of a 3rd generation silicon carbide (SiC) 1700 V and drain current (DC) rating 250 A of SiC MOSFET module “MG250V2YMS3” for industrial equipment and has expanded its lineup.

    The new product MG250V2YMS3 offers low conduction loss with low drain-source on-voltage (sense) of 0.8 V (typ.). It also offers low switching loss with low turn-on switching loss of 18 mJ (typ.) and low turn-off switching loss of 11 mJ (typ.). This helps to reduce power loss of equipment and the size of cooling device.

    MG250V2YMS3 has a low stray inductance of 12 nH (typ.) and is capable of high-speed switching. In addition, it suppresses surge voltage in switching operation. Thus, it is available for high frequency isolated DC-DC converter.

    Toshiba’s SiC MOSFET module of 2-153A1A package has a lineup of four existing products, MG250YD2YMS3 (2200 V / 250 A), MG400V2YMS3 (1700 V / 400 A), and MG600Q2YMS3 (1200 V / 600 A), including new products. This provides a wider range of product selection.

    Toshiba will continue to meet the needs for high efficiency and the downsizing of industrial equipment.

    Applications

    Industrial equipment

    • Inverters and converters for railway vehicles
    • Auxiliary power supply for railway vehicles
    • Renewable energy power generation systems
    • Motor control equipment for industrial equipment
    • High frequency DC-DC converters, etc.

    Features

    • Low drain-source on-voltage (sense):
      VDS(on)sense=0.8 V (typ.) (ID=250 A, VGS=+20 V, Tch=25 °C)
    • Low turn-on switching loss:
      Eon=18 mJ (typ.) (VDD=900 V, ID=250 A, Tch=150 °C)
    • Low turn-off switching loss:
      Eoff=11 mJ (typ.) (VDD=900 V, ID=250 A, Tch=150 °C)
    • Low stray inductance:
      LsPN=12 nH (typ.)

    Original – Toshiba

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  • Toshiba Started Construction of a Back-End Fab for Power Semiconductors

    Toshiba Started Construction of a Back-End Fab for Power Semiconductors

    1 Min Read

    Toshiba Electronic Devices & Storage Corporation announced that it has started construction of a back-end production facility for power semiconductors at Himeji Operations – Semiconductor, in Hyogo Prefecture, western Japan. The new facility will start mass production in spring 2025.

    Toshiba will promote smart factory initiatives that bring automated transportation systems into manufacturing processes, promote work efficiency through adoption of RFIDNote tags, and improve the accuracy of inventory management. The facility will be 100% powered by renewable energy and equipped with solar power generation systems, underlining Toshiba’s commitment to the SDGs.

    Power devices are essential components for managing and reducing power consumption in all kinds of electronic equipment, and for saving energy. With the start of production at the new Himeji facility, Toshiba will more than double its production capacity for automotive power semiconductor production, against fiscal 2022, and reinforce its contributions to advancing carbon neutrality.

    Original – Toshiba

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  • Toshiba Released Two New Power MOSFETs with High-Speed Diodes

    Toshiba Released Two New Power MOSFETs with High-Speed Diodes

    2 Min Read

    Toshiba Electronic Devices & Storage Corporation has added DTMOSVI(HSD), power MOSFETs with high-speed diodes suitable for switching power supplies, including data centers and photovoltaic power conditioners, to its latest-generation DTMOSVI series with a super junction structure. Shipments of the first two products “TK042N65Z5” and “TK095N65Z5,” 650V N-channel power MOSFETs in TO-247 packages, start today.

    The new products use high-speed diodes to improve the reverse recovery characteristics important for bridge circuit and inverter circuit applications. Against the standard DTMOSVI, they achieve a 65% reduction in reverse recovery time (trr), and an 88% reduction in reverse recovery charge (Qrr) (measurement conditions: -dIDR/dt= 100A/μs).

    The DTMOSVI(HSD) process used in the new products improves on the reverse recovery characteristics of Toshiba’s DTMOSIV series with high-speed diodes (DTMOSIV(HSD)), and has a lower drain cut-off current at high temperatures. The figure of merit “drain-source On-resistance × gate-drain charges” is also lower. The high temperature drain cut-off current of TK042N65Z5 is approximately 90% lower, and the drain-source On-resistance × gate-drain charge 72% lower, than in Toshiba’s current TK62N60W5.

    This advance will cut equipment power loss and help to improve efficiency. The TK042N65Z5 shows a maximum improvement in power supply efficiency over the current TK62N60W5 of about 0.4%, as measured in a 1.5kW LLC circuit.

    A reference design, “1.6 kW Server Power Supply (Upgraded)”, that uses TK095N65Z5 is available on Toshiba’s website today. The company also offers tools that support circuit design for switching power supplies. Alongside the G0 SPICE model, which verifies circuit function in a short time, highly accurate G2 SPICE models that accurately reproduce transient characteristics are now available.

    Toshiba plans to expand the DTMOSVI(HSD) line-up with the release of devices in TO-220 and TO-220SIS through-hole packages, and TOLL and DFN 8×8 surface-mount packages.

    The company also will continue to expand its line-up of the DTMOSVI series beyond the already released 650V and 600V products and the new products with high-speed diodes. This will enhance switching power supply efficiency, contributing to energy-saving equipment.

    Original – Toshiba

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  • Toshiba Unveils a Newly Developed Press Pack IEGT

    Toshiba Unveils a Newly Developed Press Pack IEGT

    1 Min Read

    Toshiba Electronic Devices & Storage Corporation has launched a newly developed press pack IEGT “ST3000GXH35A” with ratings of 4500 V/3000 A for use in high-voltage converters.

    The new product ST3000GXH35A has optimized N buffer layer design, thereby reducing approximately 400 V of turn-off-voltage oscillation peak-value (Vcp) at low current, compared with the Toshiba’s existing product. This helps simplify the snubber circuit.

    In addition, the measuring voltage of short-circuit pulse-width has been enhanced to 3400 V in response to applications requiring high voltage. This allows facilitating the short-circuit protection design of converters.

    Applications

    • DC power transmission
    • Static VAR compensator
    • Industrial motor controller

    Features

    • Maximum junction temperature rating: Tj (max)=150 °C
    • Approximately 400 V reduction in turn-off voltage oscillation peak-value (Vcp) at low current
    • Enhanced 3400 V of short-circuit pulse-width

    Original – Toshiba

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  • Toshiba to Move its Semiconductor Business Unit and R&D to Kawasaki

    Toshiba to Move its Semiconductor Business Unit and R&D to Kawasaki

    1 Min Read

    Toshiba Electronic Devices & Storage Corporation will move its semiconductor business unit and its research and development (R&D) center to a new building in Toshiba Corp’s Komukai Complex in Kawasaki. It will also be home to Toshiba’s Corporate R&D Center, strengthening synergy within Toshiba Group’s R&D organizations. 

    The new building will provide spaces for exhibitions and other events open to people from outside the company, as well as collaboration spaces for co-creation with customers. It will create an environment customers can feel free to visit, and promote new ways of working unconstrained by typical workplace limitations. 

    Virtually all energy will be derived from renewable, and CO2 emissions from power consumption will target zero, contributing to the realization of carbon neutrality.

    Division names:      Semiconductor Division and Electronic Devices & Storage R&D Center
    Address:                 1, Komukai-Toshiba-cho, Saiwai-ku, Kawasaki, Kanagawa 212-8583, Japan
    Phone number:      +81-44-548-2000 (switchboard; no change)
    Relocation date:     January 22, 2024

    The address of the Storage Products Division and the company’s registered address remain unchanged, as below.

    Storage Products Division
    8, Shinsugita-cho, Isogo-ku, Yokohama, Kanagawa 235-8522, Japan

    Registered headquarters
    1-1, Shibaura 1-Chome, Minato-ku, Tokyo, Japan

    Original – Toshiba

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  • Toshiba Electronic Devices & Storage Corporation Announced New Board of Directors

    Toshiba Electronic Devices & Storage Corporation Announced New Board of Directors

    1 Min Read

    Toshiba Electronic Devices & Storage Corporation announced new board of directors, with an effective date of December 22, 2023.

    The composition of the Board of Directors and the company’s Auditors, as of December 22, 2023, will be as follows:

    Directors and Officers of the Company


    Director, President & CEO        Taro Shimada (Toshiba Corporation) 
    Director, Vice President            Noriyasu Kurihara
    Director                                     Seiichi Mori
    Director                                     Norifumi Inukubo (Toshiba Corporation)
    Director                                     Hiroshi Kuriki (Toshiba Corporation)
    Director                                     Shin Kurosawa
    Director                                     Hiroyuki Shinki (Toshiba Corporation)
    Director                                     Yutaka Sata (Toshiba Corporation)
    Auditor                                      Hiroki Okada
    Auditor                                      Masami Takaoka
    Auditor                                      Akira Nakanishi (Toshiba Corporation)

    Retiring Director as of December 22, 2023
    Hiroyuki Sato

    Original – Toshiba

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  • Toshiba Launched Bipolar Transistors for Gate Drive Circuits in Power Devices

    Toshiba Launched Bipolar Transistors for Gate Drive Circuits in Power Devices

    1 Min Read

    Toshiba Electronic Devices & Storage Corporation has launched two bipolar transistors “TTA2097 and TTC5886A” (with SC-63 package: Toshiba’s nickname is New PW-Mold), suitable for gate drive circuits in power devices, current switches in consumer equipment and industrial equipment, and LED drive circuits. The collector-emitter voltage rating and collector current (DC) rating of TTA2097 is -50 V/-5 A and that of TTC5886A is 50 V/5 A.

    The new products TTA2097 and TTC5886A use small surface-mount type SC-63 package. Compared with Toshiba’s existing products with the same package, the new products have changed the wire material from gold to copper while the ratings and electrical characteristics are equivalent. This contributes to the reduction of environmental impacts. It is also easy to replace Toshiba’s existing products.

    Toshiba will continue to expand its lineup of products that help reduce environmental impact.

    Applications

    Consumer equipment and industrial equipment

    • Gate drive circuits for power devices
    • Current switches
    • LED drive circuits, etc.

    Features

    • Use of copper wire materials to reduce environmental impact
    • Large collector current (DC) rating:
      IC=-5 A (TTA2097)
      IC=5 A (TTC5886A)
    • Small surface-mount type SC-63 package: 
      6.5 mm × 9.5 mm (typ.), t=2.3 mm (typ.)

    Original – Toshiba

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