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A plan by ROHM Co., Ltd. and Toshiba Electronic Devices & Storage Corporation to collaborate in the manufacture and increased volume production of power devices has been recognized and will be supported by the Ministry of Economy, Trade and Industry as a measure supporting the Japanese Government’s target of secure and stable semiconductor supply.
ROHM and Toshiba Electronic Devices & Storage will respectively make intensive investments in silicon carbide (SiC) and silicon (Si) power devices, effectively enhance their supply capabilities, and complementally utilize other party’s production capacity.
Power devices are essential components for supplying and managing power supply in all kinds of electronic equipment, and for achieving a carbon-free, carbon-neutral society. Current demand is expected to see continued growth.
In automotive applications, development of more efficient, smaller and lighter electric powertrains has advanced alongside the rapid expansion in vehicle electrification. In industrial applications, stable supply of power devices and improved characteristics are widely required to support increasing automation and higher efficiency requirements.
Against this backdrop, ROHM has formulated a management vision, “We focus on power and analog solutions and solve social problems by contributing to our customers’ needs for energy savings and miniaturization of their products.,” and accelerates its efforts for a carbon-free. SiC power devices are the keys to energy savings.
Since the world’s first mass production of SiC MOSFETs, ROHM has been constantly developing industry-leading technologies. Among these are ROHM’s latest 4th Generation SiC MOSFETs that will be adopted for numerous electric vehicles and industrial equipment. As one of its priority projects, ROHM is working on SiC business, which contains aggressive and continuous investment to increase the production capacity of SiC and meet strong demand growth.
Toshiba Group, with its long-standing Basic Commitment, “Committed to People, Committed to the Future.,” aims to advance the achievement of carbon neutrality and a circular economy. Toshiba Electronic Devices & Storage has for decades supplied Si power devices, mainly for automotive and industrial markets, that have helped to secure energy saving solutions and equipment miniaturization.
The company started production on a 300mm wafer line last year, and is accelerating investment to enhance production capacity and meet strong demand growth. It is also advancing development of a wider lineup of SiC power devices, especially for automotive and power transmission and distribution applications, taking full advantage of the expertise it has cultivated in railway vehicle applications.
ROHM has already announced its participation in the privatization of Toshiba, but this investment did not serve as the starting point for manufacturing collaboration between the two companies. Under intensifying international competition in the semiconductor industry, ROHM and Toshiba Electronic Devices & Storage have been considering collaboration in the power device business for some time, and that resulted in the joint application.
ROHM and Toshiba Electronic Devices & Storage will collaborate in manufacturing power devices, through intensive investments in SiC and Si power devices, respectively, toward enhancing both companies’ international competitiveness. The companies will also seek to contribute to strengthening the resilience of semiconductor supply chains in Japan.
Original – Toshiba
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Toshiba Electronic Devices & Storage Corporation has launched chopper SiC MOSFET modules “MG800FXF1ZMS3” and ”MG800FZF1JMS3” with ratings of 3300 V and 800 A using 3rd generation silicon carbide (SiC) MOSFET and SBD chips for industrial equipment and has expanded its lineup.
The new products MG800FXF1ZMS3 and MG800FXF1JMS3 adopt an iXPLV package with Ag sintering internal bonding technology and high compatibility with mounting. These offers low conduction loss with low drain-source on-voltage (sense) of 1.3 V (typ.), and also offers low switching loss with low turn-on switching loss of 230 mJ (typ.) and low turn-off switching loss of 230 mJ (typ.). These contribute to reducing the power loss of equipment and the size of cooling device.
The lineup of Toshiba’s MOSFET modules of iXPLV package has three products, including existing product MG800FXF2YMS3 (3300 V / 800 A / Dual SiC MOSFET module.) This provides a wide range of product selection. This can be used in 2-level inverters, buck/boost converters and 3-level inverters.
Toshiba will continue to meet the market needs for high efficiency and the downsizing of industrial equipment.
Applications
Industrial equipment
- Inverters and converters for railway vehicles
- Renewable energy power generation systems
- Motor control equipment for industrial equipment, etc.
Features
- Low drain-source on-voltage (sense):
VDS(on)sense=1.3 V (typ.) (ID=800 A, VGS=+20 V, Tch=25 °C) - Low turn-on switching loss:
Eon=230 mJ (typ.) (VDD=1800 V, ID=800 A, Tch=175 °C) - Low turn-off switching loss:
Eoff=230 mJ (typ.) (VDD=1800 V, ID=800 A, Tch=175 °C)
Original – Toshiba
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Toshiba Electronic Devices & Storage Corporation has launched the product “HN1D05FE”, a 400 V voltage switching diode. The new product “HN1D05FE” is suitable for applications that require high voltage characteristics such as commercial AC power supply circuits and AC-DC converter circuits for LED illumination. With a 400 V reverse voltage rating, HN1D05FE is suitable for power supply circuits below 200 V, as well as reverse-current protection and surge protection, and more.
In addition, the new product is housed in a SOT-563 package (Toshiba package name: ES6, 1.6 mm × 1.6 mm (typ.), t=0.55 mm (typ.)) to achieve high voltage characteristics in a small size.
Furthermore, built-in two switching diodes allow reducing the number of devices in circuits which use multiple devices.Moreover, the package size is reduced by approximately 70 % and the package height is as low as 50 % compared with the SOT-24 package (Toshiba package name: SMQ, 2.9 mm × 2.9 mm (typ.), t=1.1 mm (typ.)) of Toshiba’s existing product 1SS399. This helps to downsizing and thinning of the set.
Applications
- Consumer equipment (home appliances, OA equipment, PC, etc.)
- Industrial equipment (FA equipment, PV, semiconductor-manufacturing equipment, etc.)
Features
- High reverse voltage : VR = 400 V
- Low leakage current : IR = 0.1 μA (max) (VR = 400 V)
- Small and thin SOT-563 Package : Toshiba Package Name : ES6 (1.6 mm × 1.6 mm (typ.), t = 0.55 mm (typ.))
Original – Toshiba
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Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched two products of 600V small intelligent power device (IPD) for brushless DC motor drive applications such as air conditioners, air cleaners, and pumps. Volume shipments of “TPD4163K” and “TPD4164K,” which have output current (DC) ratings of 1A and 2A, respectively, start today.
Both new products are housed in a through hole type HDIP30 package, which reduces the mounting area by approximately 21% against Toshiba’s previous products. This helps reduce the size of motor drive circuit boards.
As power supply voltage may fluctuate significantly in regions with unstable power supply, the voltage has been increased from the 500V of Toshiba’s previous products[1] to 600V, which improves reliability.
A “Reference Design for Sensorless Brushless DC Motor Drive Circuit” that utilizes the functions of the new TPD4164K with a TMPM374FWUG microcontroller with vector control engine is available from today on Toshiba’s website.
Toshiba will continue to expand its product line-up with improved characteristics, to improve design flexibility, and to contribute to carbon neutrality through energy-saving motor control.
Applications
Brushless DC motors in home appliances
- Fan motors (air conditioner, air cleaner, ventilation fan, ceiling fan, etc.)
- Pumps
Features
- High power supply voltage rating to secure operation margin for power supply voltage fluctuations: VBB=600V
- Small package
Through hole type HDIP30: 32.8mm×13.5mm (typ.), t=3.525mm (typ.)
Original – Toshiba
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Toshiba Electronic Devices & Storage Corporation announced that Atsushi Tomishima, an Expert at its Electronic Devices & Storage Research & Development (R&D) Center, is a recipient of a 2023 1906 Award from the International Electrotechnical Commission (IEC).
The IEC is the world leader in evaluating and publishing international standards for electrical, electronic, and related technologies. The 1906 Award, created in 2006 and named for the year IEC was founded, honors the work of experts around the world whose work is fundamental to IEC and the execution of its important mission. The Award also recognizes recent and exceptional achievements—a project or other contribution—related to IEC’s activities that contribute in a significant way to advancing the Commission’s work.
Mr. Tomishima, a researcher in the Package Solution Technology Development Dept. at Toshiba’s Electronic Devices & Storage R&D Center, has been an expert member representing Japan on the IEC’s subcommittee on integrated circuit technology (TC47/SC47A) since FY2015. He also serves as an executive member of the electromagnetic compatibility (EMC) subcommittee of the Japan Electronics and Information Technology Industries Association, and has led the subcommittee’s activities, and consolidated numerous opinions and proposals on standardization.
At IEC’s EMC simulation modelling (SC47A WG2) and EMC measurement methods on Integrated circuit (WG9) working groups, he has elicited opinions from many countries, ensured a full understanding of each participant’s position, and summarized discussions.
Through these activities, he received this award in recognition of his significant contribution to the efficient promotion of standardization in the semiconductor design and testing field. These international standards established by Mr. Tomishima’s activities allow us to accurately evaluate the noise characteristics of semiconductors themselves, greatly contributing to improving the quality of product design such as integrated circuits and automobiles.
Toshiba will continue to promote international standardization activities in the electric and electronic technologies areas.
Original – Toshiba
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Toshiba Electronic Devices & Storage Corporation has started mass production of three 40 V N-channel MOSFETs using SOP Advance(WF) package for automotive and has expanded its lineup. The three models are “XPHR9904PS, XPH2R404PS and XPH3R304PS.”
The new products reduce drain-source On-resistance with the U-MOSIX process as with Toshiba’s precedence release products XPHR7904PS and XPH1R104PS. The drain-source On-resistance of XPH2R404PS is 2.4 mΩ (max), which is approximately 27 % lower than that of Toshiba’s existing product TPCA8083, and XPH3R304PS is 3.3 mΩ (max), which is approximately 42 % lower than that of Toshiba’s existing product TPCA8085.
The drain-source On-resistance of XPHR9904PS is 0.99 mΩ (max). Reducing drain-source On-resistance of these products contributes to low power consumption of automotive equipment. In addition, they are qualified with the automotive reliability standard AEC-Q101. The PPAP of IATF16949 is also available.
The package is a surface mount type SOP Advance(WF) that uses a wettable flank terminal structure, which facilitates automated visual inspection of the board mounting state.
Toshiba’s automotive MOSFETs support a variety of automotive applications and meet a wide range of customer needs.
Applications
- Automotive equipment: motor drives, switching power supplies, load switches, etc.
Features
- Low On-resistance
XPHR9904PS: RDS(ON)=0.99 mΩ (max) (VGS=10 V)
XPH2R404PS: RDS(ON)=2.4 mΩ (max) (VGS=10 V)
XPH3R304PS: RDS(ON)=3.3 mΩ (max) (VGS=10 V) - AEC-Q101 qualified
- PPAP of IATF16949 available
Original – Toshiba
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Toshiba Electronic Devices & Storage Corporation announced new board of directors, with an effective date of October 1, 2023. The composition of the Board of Directors and the company’s Auditors, as of October 1, 2023, will be as follows.
Directors and Officers of the Company
- Hiroyuki Sato President & CEO (Toshiba Corporation)
- Seiichi Mori
- Norifumi Inukubo (Toshiba Corporation)
- Hiroshi Kuriki (Toshiba Corporation)
- Shin Kurosawa
- Noriyasu Kurihara
- Hiroyuki Shinki (Toshiba Corporation)
- Yutaka Sata (Toshiba Corporation)
Auditors
- Hiroki Okada
- Masami Takaoka
- Akira Nakanishi (Toshiba Corporation)
Retiring Director as of September 30, 2023
- Takeshi Kamebuchi
- Kenji Kishimoto
- Takashi Miyamori
- Shigenao Noda
- Ikuko Shimogawara
Original – Toshiba
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Toshiba Electronics Europe GmbH launched two products for brushless DC (BLDC) motor drive applications including fan motors, ventilation fan, air conditioners, air cleaners, and pumps.
Each of the intelligent power devices (IPD) incorporate 600V-rated IGBTs and a matched gate driver as a one-chip solution in a single compact package. The output DC current (IOUT) rating of the TPD4163F is 1A while the TPD4164F is rated at 2A.
The two devices (TPD4163F and TPD4164F) have an IGBT saturation voltage (VCEsat) of 2.6V and 3.0V respectively, while the Diode forward voltage (VF) is 2.0V and 2.5V.
Both devices are housed in a miniature surface mount HSSOP31 package. With dimensions of just 17.5mm x 11.93mm x 2.2mm, the PCB footprint is reduced by around 63% when compared with Toshiba’s existing DIP26 package products. This makes a significant contribution to reducing the space required for motor drive circuit boards.
In addition, in geographic regions where the power supply is unstable, the supply voltage may fluctuate significantly. Therefore, to improve reliability, the supply voltage rating (VBB)has been increased from 500V to 600V to introduce more design margin.
To support the new devices, Toshiba has developed a reference design for BLDC sensorless brushless DC motor drive utilizing the new TPD4164F and a microcontroller TMPM374FWUG.
Toshiba will continue to expand their product lineup with various packages and improved characteristics, contributing to customers’ design flexibility and carbon neutrality through energy-saving motor control.
Volume production shipments of both new devices (and the reference design board) start today.
Original – Toshiba
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Toshiba Electronic Devices & Storage Corporation has launched silicon carbide (SiC) MOSFETs, the “TWxxxZxxxC series,” that use a four-pin TO-247-4L(X) package that reduces switching loss with the company’s latest 3rd generation SiC MOSFETs chip for industrial equipment. Volume shipments of ten products, five with 650V ratings and five with 1200V, start today.
The new products are the first in Toshiba’s SiC MOSFET line-up to use the four-pin TO-247-4L(X) package, which allows Kelvin connection of the signal source terminal for the gate drive. The package can reduce the effect of source wire inductance inside the package, improving high-speed switching performance. For the new TW045Z120C, the turn-on loss is approximately 40% lower and the turn-off loss reduced by approximately 34%, compared with Toshiba’s current product TW045N120C in a three-pin TO-247 package. This helps to reduce equipment power loss.
Applications
- Switching power supplies (servers, data centers, communications equipment, etc.)
- EV charging stations
- Photovoltaic inverters
- Uninterruptible power supplies (UPS)
Features
- Four-pins TO-247-4L(X) package:
Switching loss is reduced by Kelvin connection of the signal source terminal for the gate drive - 3rd generation SiC MOSFETs
- Low drain-source On-resistance x gate-drain charge
- Low diode forward voltage: VDSF=-1.35V (typ.) (VGS=-5V)
Original – Toshiba
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Toshiba Electronic Devices & Storage Corporation developed “MG250YD2YMS3,” the industry’s first 2200V dual silicon carbide (SiC) MOSFET module for industrial equipment. The new module has a drain current (DC) rating of 250A and uses the company’s third generation SiC MOSFET chips. It is suitable for applications that use DC1500V, such as photovoltaic power systems and energy storage systems. Volume shipments start today.
Industrial applications like those mentioned above generally use DC1000V or lower power, and their power devices are mostly 1200V or 1700V products. However, anticipating widespread use of DC1500V in coming years, Toshiba has released the industry’s first 2200V product.
MG250YD2YMS3 offers low conduction loss with a low drain-source on-voltage (sense) of 0.7V (typ.). It also offers lower turn-on and turn-off switching loss of 14mJ (typ.) and 11mJ (typ.) respectively, an approximately 90% reduction against a typical silicon (Si) IGBT. These characteristics contribute to higher equipment efficiency. Realizing low switching loss also allows the conventional three-level circuit to be replaced with a two-level circuit with a lower module count, contributing to equipment miniaturization.
Toshiba will continue to meet the market needs for high efficiency and the downsizing of industrial equipment.
Applications
Industrial Equipment
- Renewable energy power generation systems (photovoltaic power systems, etc.)
- Energy storage systems
- Motor control equipment for industrial equipment
- High frequency DC-DC converter, etc.
Features
- Low drain-source on-voltage (sense):
VDS(on)sense=0.7V (typ.) (ID=250A, VGS=+20V, Tch=25°C) - Low turn-on switching loss:
Eon=14mJ (typ.) (VDD=1100V, ID=250A, Tch=150°C) - Low turn-off switching loss:
Eoff=11mJ (typ.) (VDD=1100V, ID=250A, Tch=150°C) - Low stray inductance:
LsPN=12nH (typ.)
Original – Toshiba
