Silicon Triangle: The United States, Taiwan, China, and Global Semiconductor Security
The United States, Taiwan, and China are bound within a “silicon triangle.” Semiconductors link our geopolitics, our ongoing economic prosperity, and our technological competitiveness. This book draws on the deliberations of a multidisciplinary Hoover Institution–Asia Society working group of technologists, economists, military strategists, industry players, and regional policy experts to contemplate the dynamic global supply chain in semiconductors—one in which US industry faces growing vulnerabilities, China aggressively promotes home-grown semiconductor mastery, and Taiwan finds itself with a crucial monopoly on high-end logic chips sought by buyers globally.
Making a Semiconductor Superpower
This book provides real stories about the South Korean semiconductor community. It explores the lives and careers of six influential semiconductor engineers who all studied at Korea Advanced Institute of Science and Technology (KAIST) under the mentorship of Dr. Kim Choong-Ki, the most influential semiconductor professor in South Korea during the last quarter of the twentieth century. Kim’s students became known as “Kim’s Mafia” because of the important positions they went on to hold in industry, government, and academia.
75th Anniversary of the Transistor
75th Anniversary of the Transistor is a commemorative anniversary volume to celebrate the invention of the transistor. The anniversary volume was conceived by the IEEE Electron Devices Society to provide comprehensive yet compact coverage of the historical perspectives underlying the invention of the transistor and subsequent evolution into a multitude of integration and manufacturing technologies and applications. The book reflects transistor's development since inception to the current state of the art that continues to enable scaling to very large-scale integrated circuits of higher functionality and speed.
Handbook of Silicon Carbide Materials and Devices
This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field.
Understanding Semiconductors: A Technical Guide for Non-Technical People
Whether you’re narrowly technical or don’t know silicon from silly putty, working directly in hardware technologies and want to know more, or simply a curious person seeking hard information about the technology that powers the modern world, Understanding Semiconductors will be an informative, dependable resource.
Thermal Reliability of Power Semiconductor Device in the Renewable Energy System
This book focuses on the thermal reliability of power semiconductor device by looking at the failure mechanism, thermal parameters monitoring, junction temperature estimation, lifetime evaluation, and thermal management. Theoretical analysis and experimental tests are presented to explain existing reliability improvement techniques. This book is a valuable reference for the students and researchers who pay attention to the thermal reliability design of power semiconductor device.
Wide Bandgap Semiconductors for Power Electronics: Materials, Devices, Applications
Wide Bandgap Semiconductors for Power Electronics is a comprehensive and authoritative guide to wide bandgap materials silicon carbide, gallium nitride, diamond and gallium(III) oxide. With contributions from an international panel of experts, the book offers detailed coverage of the growth of these materials, their characterization, and how they are used in a variety of power electronics devices such as transistors and diodes and in the areas of quantum information and hybrid electric vehicles.
GaN Power Devices and Applications
GaN Power Devices and Applications textbook Edited by Alex Lidow, Ph.D. Since the 2019 release of the 3rd edition textbook, GaN Transistors for Efficient Power Conversion, published by J. Wiley, there has been rapid adoption of GaN transistors and integrated circuits into a myriad of end-use applications such as robots, drones, AI computers, AC adapters, autonomous vehicles, and even vacuum cleaners. This book, GaN Power Devices and Applications, provides an update on gallium nitride technology and applications by leading experts.
Entrepreneurship in Power Semiconductor Devices, Power Electronics, and Electric Machines and Drive Systems
This book introduces the basics of entrepreneurship and a methodology for the study of entrepreneurship in electrical engineering and other engineering fields. Entrepreneurship is considered here in three fields of electrical engineering, viz. power semiconductor devices, power electronics and electric machines and drive systems, and their current practice. It prepares the reader by providing a review of the subject matter in the three fields, their current status in research and development with analysis aspect as needed, thus allowing readers to gain self-sufficiency while reading the book.
Power Semiconductor Drives
The book covers thyristor controlled drives, single phase semi and fully controlled converters connected to separately excited and D.C series motors – continuous current operation – output voltage and current wave-forms – speed and torque expressions – speed – torque characteristics - problems on converter fed d.c motors.
GaN Transistors for Efficient Power Conversion
This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications.
Characterization of Wide Bandgap Power Semiconductor Devices
Characterization of Wide Bandgap Power Semiconductor Devices presents comprehensive methods with examples for the characterization of this important class of power devices. The book covers pulsed static characterization; junction capacitance characterization; fundamentals of dynamic characterization; gate drive for dynamic characterization; layout design and parasitic management; protection design for double pulse test; measurement and data processing for dynamic characterization; cross-talk consideration; impact of three-phase system; and topology considerations.
Fundamentals of Power Semiconductor Devices
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. The book will appeal to practicing engineers in the power semiconductor device community.
Wide Bandgap Power Semiconductor Packaging: Materials, Components, and Reliability
This book addresses the key challenges that WBG power semiconductors face during integration, including heat resistance, heat dissipation and thermal stress, noise reduction at high frequency and discrete components, and challenges in interfacing, metallization, plating, bonding and wiring. Experts on the topic present the latest research on materials, components and methods of reliability and evaluation for WBG power semiconductors and suggest solutions to pave the way for integration.
Semiconductor Power Devices: Physics, Characteristics, Reliability
This book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. Special peculiarities of devices from the ascending semiconductor materials SiC and GaN are discussed.
Gallium Nitride and Silicon Carbide Power Devices
This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities.
Switch-Mode Power Supplies
The latest spice simulation and design tools for creating state-of-the-art switching power supplies. Fully updated to incorporate new SPICE features and capabilities, this practical guide explains, step by step, how to simulate, test, and improve switch-mode power supply designs. Detailed formulas with founding equations are included. Based on the author's continued research and in-depth, hands-on work in the field, this revised resource offers a collection of the latest SPICE solutions to the most difficult problem facing power supply designers: creating smaller, more heat-efficient power supplies in shorter design cycles.
The book contains a summary of knowledge of power semiconductor structures. It presents a short historic introduction as well as a brief selection of facts from solid state physics, in particular those related to power semiconductors. The book deals with diode structures as well. In addition to fundamental facts in pn-junction theory, the book covers mainly the important processes of power structures.
Modeling Bipolar Power Semiconductor Devices
This book presents physics-based models of bipolar power semiconductor devices and their implementation in MATLAB and Simulink. The devices are subdivided into different regions, and the operation in each region, along with the interactions at the interfaces which are analysed using basic semiconductor physics equations that govern their behaviour.
Power Electronics Semiconductor Devices
This book relates the recent developments in several key electrical engineering R&D labs, concentrating on power electronics switches and their use. The first sections deal with key power electronics technologies, MOSFETs and IGBTs, including series and parallel associations. The next section examines silicon carbide and its potentiality for power electronics applications and its present limitations. Then, a dedicated section presents the capacitors, key passive components in power electronics, followed by a modelling method allowing the stray inductances computation, necessary for the precise simulation of switching waveforms.