Si Tag Archive

  • MCC Semi Introduced New 40 V N-channel MOSFETs

    MCC Semi Introduced New 40 V N-channel MOSFETs

    1 Min Read

    MCC Semi introduced new high-performance 40V N-channel MOSFETs. These components leverage split-gate trench (SGT) technology and full AEC-Q101 qualification in compact packages.

    Both MCU2D8N04YHQ and MCB2D8N04YHQ also boast low on-resistance of only 2.8mΩ, ensuring efficient power management in a diverse range of automotive systems. 

    These versatile MOSFETs in high-demand DPAK and D2PAK packages ensure a seamless upgrade path with minimal changes for integration within existing designs. Adding to their unquestionable performance in harsh conditions, these components have a high operating junction temperature of up to 175°C. 

    Whether it’s a battery management system or electric water pump, these new MOSFETs are up for delivering the ultimate in reliability for challenging automotive applications.

    Features & Benefits:

    • Fully AEC-Q101 qualified
    • Split-gate trench (SGT) technology
    • Low RDS(on)
    • High power density package
    • High junction temperature up to 175℃
    • Available in compact DPAK and D2PAK packages

    Original – Micro Commercial Components

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  • MCC Semi Delivers New Automotive Grade MOSFETs

    MCC Semi Delivers New Automotive Grade MOSFETs

    1 Min Read

    Micro Commercial Components introduced the latest auto-grade N-channel power MOSFETs with up to 2.5mΩ on-resistance: MCACL220N06YHE3, MCACL2D5N06YL, MCACL280N04YHE3, and MCACL330N04YHE3.

    Optimized for high current output, these powerful components boast RDS(on) as low as 0.8mΩ in a sleek, engineer-friendly DFN5060 package. You can enhance power management and ramp up efficiency with minimal losses and the confidence that come along with AEC-Q101 qualification and the MCC name. 

    With high power density, MCC’s new 40V and 60V MOSFETs are designed to handle harsh conditions and operating junction temps up to 175℃ with ease, making them ideal for diverse automotive and industrial applications — from battery management systems and electric power steering to lighting controls, water pumps, and solar power systems.  

    Features & Benefits:

    • AEC-Q101 qualified for reliability
    • Advanced split-gate trench (SGT) technology
    • Excellent thermal performance & efficiency
    • Low RDS(on) minimizes power losses
    • High power density packagey
    • High junction temperature up to 175℃
    • Compact DFN5060 package saves space and material costs

    Original – Micro Commercial Components

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  • Infineon Technologies Unveiled 200 V OptiMOS™ 6 MOSFET Family

    Infineon Technologies Unveiled 200 V OptiMOS™ 6 MOSFET Family

    2 Min Read

    Motor drive applications are taking a leap forward with the launch of the Infineon Technologies AG OptiMOS™ 6 200 V MOSFET product family. The new portfolio is designed to deliver optimal performance in applications such as e-scooters, micro-EVs, and E-forklifts.

    The improved conduction losses and switching behavior for these new MOSFETs reduce the electromagnetic interference (EMI) and switching losses. This benefits various switching applications, including servers, telecom, energy storage systems (ESS), audio, solar and others.

    Additionally, the combination of a wide safe operating area (SOA) and industry-leading R DS(on) results in a perfect fit for static switching applications such as  battery management systems. With the introduction of the new OptiMOS 6 200 V product family, Infineon sets a new industry benchmark with increased power density, efficiency, and system reliability for its customers’ benefit.

    The OptiMOS 6 200 V portfolio delivers enhanced technical features compared to its predecessor, the OptiMOS 3. It features a 42 percent lower R DS(on) that contributes to reduced conduction losses and increased output power. Regarding diode behavior, the OptiMOS 6 200 V provides a significant increase in softness, more than three times that of the OptiMOS 3.

    Combined with up to 89 percent reduction in Q rr(typ), the switching and EMI behaviors are significantly improved. The technology also features improvements in parasitic capacitance linearity (C oss and C rss), which reduces oscillation during switching and lowers voltage overshoot. A tighter V GS(th) spread and lower transconductance aid in MOSFET paralleling and current sharing, leading to more uniform temperatures and reducing the number of paralleled MOSFETs.

    The OptiMOS 6 200 V products feature an improved SOA and are classified as MSL 1 according to J-STD-020. These RoHS-compliant, lead-free products align with current industry standards.

    Original – Infineon Technologies

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  • STMicroelectronics Unveiled New MDmesh DM9 Automotive-Grade 600V650V SJ MOSFETs

    STMicroelectronics Unveiled New MDmesh DM9 Automotive-Grade 600V/650V SJ MOSFETs

    2 Min Read

    STMicroelectronics released automotive-grade 600V/650V super-junction MOSFETs in STPOWER MDmesh DM9 AG series which deliver superior efficiency and ruggedness for on-board chargers (OBCs) and DC/DC converter applications in both hard- and soft-switching topologies.

    With outstanding RDS(on) per die area and minimal gate charge, the silicon-based devices combine low energy losses with outstanding switching performance, setting a new benchmark figure of merit. Compared to the previous generation, the latest MDmesh DM9 technology ensures a tighter gate-source threshold voltage (VGS(th)) spread that results in sharper switching for lower turn-on and turn-off losses.

    In addition, body-diode reverse recovery is improved, leveraging a new optimized process that also increases the MOSFETs’ overall ruggedness. The diode’s low reverse-recovery charge (Qrr) and fast recovery time (trr) make the MDmesh DM9 AG series ideal for phase-shift zero-voltage switching topologies that demand the utmost efficiency.

    The family offers a selection of through-hole and surface-mount packages that help designers achieve a compact form factor with high power density and system reliability. The TO-247 LL (long-lead) is a popular through-hole option that eases design-in and leverages proven assembly processes. Among the surface-mount packages, the H2PAK-2 (2 leads) and H2PAK-7(7 leads) are optimized for bottom-side cooling with thermal substrates or PCBs featuring thermal vias or other enhancement. HU3PAK and ACEPACK™ SMIT topside-cooled surface-mount packages are also available.

    The first device in the new STPOWER MDmesh DM9 AG series is the STH60N099DM9-2AG, a 27A AEC-Q101 qualified N-channel 600V device in H2PAK-2, with 76mΩ typical RDS(on). ST will expand the family to provide a full range of devices, covering a broad range of current ratings and RDS(on) from 23mΩ to 150mΩ.

    Original – STMicroelectronics

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  • Vishay Intertechnology Introduced a New 80 V Symmetric Dual N-Nhannel Power MOSFET

    Vishay Intertechnology Introduced a New 80 V Symmetric Dual N-Channel Power MOSFET

    2 Min Read

    Vishay Intertechnology, Inc. introduced a new 80 V symmetric dual n-channel power MOSFET that combines high and low side TrenchFET® Gen IV MOSFETs in a single 3.3 mm by 3.3 mm PowerPAIR® 3x3FS package. For power conversion in industrial and telecom applications, the Vishay Siliconix SiZF4800LDT increases power density and efficiency, while enhancing thermal performance, reducing component counts, and simplifying designs.

    This dual MOSFET can be used in place of two discrete devices typically specified in the PowerPAK 1212 package — saving 50 % board space. The device provides designers with a space-saving solution for synchronous buck converters, point of load (POL) converters, and half- and full-bridge power stages for DC/DC converters in radio base stations, industrial motor drives, welding equipment, and power tools. In these applications, the high and low side MOSFETs of the SiZF4800LDT form an optimized combination for 50 % duty cycles, while its logic level turn-on at 4.5 V simplifies circuit driving.

    To increase power density, the MOSFET offers best in class on-resistance down to 18.5 mW typical at 4.5 V. This is 16 % lower than the closest competing device in the same package dimensions. For increased efficiency in high frequency switching applications, the SiZF4800LDT offers a low on-resistance times gate charge — a key figure of merit (FOM) for MOSFETs used in power conversion applications — of 131mW*nC and on-resistance times gain-drain charge

    The device’s flip-chip technology enhances thermal dissipation — resulting in 54 % lower thermal resistance compared to competing MOSFETs. The SiZF4800LDT’s combination of low on-resistance and thermal resistance results in a continuous drain current of 36 A, which is 38 % higher than the closest competing device. The MOSFET features a unique pin configuration that enables a simplified PCB layout and supports shortened switching loops to minimize parasitic inductance. The SiZF4800LDT is 100 % Rg- and UIS-tested, RoHS-compliant, and halogen-free.

    Competitor Comparison Table:

    Part numberSiZF4800LDT (New)CompetitorSiZF4800LDTPerformance improved
    PackagePowerPAIR 3x3FSPowerPAIR 3x3FS 
    Dimensions (mm)3.3 x 3.3 x 0.753.3 x 3.3 x 0.75
    ConfigurationSymmetric dualSymmetric dual
    VDS (V)8080
    VGS (V)± 20± 20
    RDS(on) (mΩ) @ 4.5 VGSTyp.18.522+16 %
    Max.23.829+18 %
    Qg (nC) @ 4.5 VGSTyp.7.16.0
    FOM131132+1 %
    ID (A)Max.3626+38 %
    RthJC (C/W)Max.2.24.8+54 %

    Original – Vishay Intertechnology

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  • onsemi Expands Its Portfolio with 1200V SPM31 Intelligent Power Modules Featuring Field Stop 7 IGBT Technology

    onsemi Expands Its Portfolio with 1200V SPM31 Intelligent Power Modules Featuring Field Stop 7 IGBT Technology

    2 Min Read

    onsemi announced the availability of its 1200V SPM31 Intelligent Power Modules (IPMs) featuring the latest generation Field Stop 7 (FS7) Insulated Gate Bipolar Transistor (IGBT) technology. The SPM31 IPMs deliver higher efficiency, smaller footprint and higher power density resulting in lower total system cost than other leading solutions on the market.

    Given the greater efficiency realized using optimized IGBTs, these IPMs are ideal for three-phase inverter drive applications such as heat pumps, commercial HVAC systems, servo motors, and industrial pumps and fans.

    Operating residential and commercial buildings is estimated to contribute 26% of greenhouse gas emissions, with indirect emissions such as heating, cooling and powering buildings accounting for approximately 18%. As governments worldwide strive to meet their energy and climate commitments, more energy-efficient and lower-carbon solutions are becoming increasingly critical.

    The SPM31 IPMs control the power flow to the inverter compressor and fans in heat pumps and air conditioning systems by adjusting the frequency and voltage of the power supplied to three-phase motors for maximum efficiency. For example, onsemi’s 25A-rated SPM31 using FS7 IGBT technology can decrease power losses by up to 10% and increase in power density up to 9%, compared to our previous generation products.

    With the transition to electrification and heightened efficiency mandates, these modules help manufacturers drastically improve system design while increasing efficiency in heating and cooling applications. With the improved performance, our SPM31 IPM family featuring FS7 enables high efficiency with reduced energy losses, further reducing harmful emissions globally.

    These highly integrated modules contain gate-driving ICs, multiple on-module protection features along with our FS7 IGBTs enabling industry-leading thermal performance with the ability to support a wide range of currents, from 15A to 35A. With their best-in-class power density, SPM31 FS7 IGBT IPMs are an ideal answer to save mounting space and improve performance expectations while shortening the development time. In addition, the SPM31 IPMs include the following benefits:

    • Controls for gate drivers and protections
    • Low loss, short-circuit-rated IGBTs
    • Negative IGBT terminals available for each phase to support a wide variety of control algorithms
    • Built-in under-voltage protection (UVP)
    • Built-in bootstrap diodes and resistors
    • Built-in high-speed high-voltage integrated circuit
    • Single-grounded power supply

    Original – onsemi

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  • Vishay Intertechnology Introduced Five New IGBT Power Modules

    Vishay Intertechnology Introduced Five New IGBT Power Modules

    2 Min Read

    Vishay Intertechnology, Inc. introduced five new half-bridge IGBT power modules in the newly redesigned INT-A-PAK package. Built on Vishay’s Trench IGBT technology, the VS-GT100TS065S, VS-GT150TS065S, VS-GT200TS065S, VS-GT100TS065N, and VS-GT200TS065N offer designers a choice of two best in class technologies — low VCE(ON) or low Eoff — to lower conduction or switching losses in high current inverter stages for transportation, energy, and industrial applications.

    The half-bridge devices released today combine Trench IGBTs — which deliver improved power savings versus other devices on the market — with Gen IV FRED Pt® anti-parallel diodes with ultra soft reverse recovery characteristics. Offering a new gate pin orientation, the modules’ compact INT-A-PAK package is now 100 % compatible with the 34 mm industry-standard package to offer a mechanical drop-in replacement.

    The industrial-level devices will be used in power supply inverters for railway equipment; energy generation, distribution, and storage systems; welding equipment; motor drives; and robotics. To reduce conduction losses in output stages for TIG welding machines, the VS-GT100TS065S, VS-GT150TS065S, and VS-GT200TS065S offer an industry-low collector to emitter voltage  of ≤ 1.07 V at +125 °C and rated current. For high frequency power applications, the VS-GT100TS065N and VS-GT200TS065N offer extremely low switching losses, with Eoff down to 1.0 mJ at +125 °C and rated current.

    The RoHS-compliant modules feature 650 V collector to emitter voltages, continuous collector current from 100 A to 200 A, and very low junction to case thermal resistance. UL-approved file E78996, the devices can be directly mounted to heatsinks and offer low EMI to reduce snubbing requirements.

    Device Specification Table:

    Part #VCESICVCE(ON)EoffSpeedPackage
    @ IC and +125 °C
    VS-GT100TS065S650 V100 A1.02 V6.5 mJDC to 1 kHzINT-A-PAK
    VS-GT150TS065S650 V150 A1.05 V10.3 mJDC to 1 kHzINT-A-PAK
    VS-GT200TS065S650 V200 A1.07 V13.7 mJDC to 1 kHzINT-A-PAK
    VS-GT100TS065N650 V100 A2.12 V1.0 mJ8 kHz to 30 kHzINT-A-PAK
    VS-GT200TS065N650 V200 A2.13 V3.86 mJ8 kHz to 30 kHzINT-A-PAK

    Original – Vishay Intertechnology

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  • Toshiba Unveils a Newly Developed Press Pack IEGT

    Toshiba Unveils a Newly Developed Press Pack IEGT

    1 Min Read

    Toshiba Electronic Devices & Storage Corporation has launched a newly developed press pack IEGT “ST3000GXH35A” with ratings of 4500 V/3000 A for use in high-voltage converters.

    The new product ST3000GXH35A has optimized N buffer layer design, thereby reducing approximately 400 V of turn-off-voltage oscillation peak-value (Vcp) at low current, compared with the Toshiba’s existing product. This helps simplify the snubber circuit.

    In addition, the measuring voltage of short-circuit pulse-width has been enhanced to 3400 V in response to applications requiring high voltage. This allows facilitating the short-circuit protection design of converters.

    Applications

    • DC power transmission
    • Static VAR compensator
    • Industrial motor controller

    Features

    • Maximum junction temperature rating: Tj (max)=150 °C
    • Approximately 400 V reduction in turn-off voltage oscillation peak-value (Vcp) at low current
    • Enhanced 3400 V of short-circuit pulse-width

    Original – Toshiba

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  • Vishay Intertechnology Introduced a New 30 V N-Channel TrenchFET Gen V Power MOSFET

    Vishay Intertechnology Introduced a New 30 V N-Channel TrenchFET Gen V Power MOSFET

    2 Min Read

    Vishay Intertechnology, Inc. introduced a versatile new 30 V n-channel TrenchFET® Gen V power MOSFET that delivers increased power density and enhanced thermal performance for industrial, computer, consumer, and telecom applications.

    Featuring source flip technology in the 3.3 mm by 3.3 mm PowerPAK® 1212-F package, the Vishay Siliconix SiSD5300DN provides best in class on-resistance of 0.71 mΩ at 10 V and on-resistance times gate charge — a critical figure of merit (FOM) for MOSFETs used in switching applications — of 42 mΩ*nC.

    Occupying the same footprint as the PowerPAK 1212-8S, the device released today offers 18 % lower on-resistance to increase power density, while its source flip technology reduces thermal resistance by 63 °C/W to 56 °C/W. In addition, the SiSD5300DN’s FOM represents a 35 % improvement over previous-generation devices, which translates into reduced conduction and switching losses to save energy in power conversion applications.

    PowerPAK1212-F source flip technology reverses the usual proportions of the ground and source pads, extending the area of the ground pad to provide a more efficient thermal dissipation path and thus promoting cooler operation. At the same time, the PowerPAK 1212-F minimizes the extent of the switching area, which helps to reduce the impact of trace noise.

    In the PowerPAK 1212-F package specifically, the source pad dimension increases by a factor of 10, from 0.36 mm2 to 4.13 mm2, enabling a commensurate improvement in thermal performance.  The PowerPAK1212-F’s center gate design also simplifies parallelization of multiple devices on a single-layer PCB.

    The source flip PowerPAK1212-F package of the SiSD5300DN is especially suitable for applications such as secondary rectification, active clamp battery management systems (BMS), buck and BLDC converters, OR-ing FETs, motor drives, and load switches. Typical end products include welding equipment and power tools; servers, edge devices, supercomputers, and tablets; lawnmowers and cleaning robots; and radio base stations.

    Original – Vishay Intertechnology

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  • Micro Commercial Components Released a New Two-in-One IGBT Module

    Micro Commercial Components Released a New Two-in-One IGBT Module

    1 Min Read

    Micro Commercial Components announced two-in-one IGBT module, MIF400R065C2TL-BP. Available in the C2 package, this new cutting-edge module combines dual IGBT devices and sets the standard for rugged performance. With 650V capability and an ultra-fast and soft recovery anti-parallel rectifier, this module delivers exceptional reliability in high-power applications.

    MCC’s IGBT module is a no-brainer for motor controls, uninterruptible power supplies, welding equipment, and other power-intensive applications, thanks to its ability to withstand junction temperatures up to 175°C and a high short-circuit capability of 6us.

    Designed with low VCE(sat), IGBT trench technology, and a 400A current rating, this component ensures low switching losses and low inductance while maximizing efficiency.

    Features & Benefits:

    • Low VCE(sat) with positive temperature coefficient
    • Trench IGBT technology
    • Low switching losses
    • High short-circuit capability (6us)
    • Ultra-fast and soft recovery anti-parallel forward diode (FWD)
    • Low inductance
    • Maximum junction temperature of 175°C
    • C2 package

    Original – Micro Commercial Components

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