Leapers Semiconductor Tag Archive

  • Leapers Semiconductor Introduced a New Family of SiC Power Modules

    Leapers Semiconductor Introduced a New Family of SiC Power Modules

    2 Min Read

    Leapers Semiconductor introduced a new 62 mm package SiC module product portfolio, achieving top-tier performance in the industry. The modules adopt the widely used 62 mm module half-bridge topology design in the industrial field, using high-quality mature chips. It boasts high voltage resistance, outstanding power density, high short-circuit tolerance, and a temperature coefficient 1.4 times better than industry standards.

    The 62 mm SiC modules include voltage resistance specifications of 1200V and 1700V, meeting the demands of high-power applications, especially suitable for applications in the smart grid, rail transit, energy storage, and power supplies.

    Because of the use of leading-edge chip solutions in the industry and the application of low thermal resistance and low stray capacitance packaging technology, along with the use of Si3N4 AMB low thermal resistance substrate, Leapers’ 62 mm SiC product excels in power density, short-circuit current withstand capability, thermal resistance, and other capabilities. Particularly under high junction temperature conditions, the module’s conduction and switching losses significantly outperform industry standards.

    Technical Features:

    • Voltage resistance options: 1200V or 1700V
    • Outstanding current output capability
    • Temperature coefficient index better than industry standards
    • Low losses, excellent short-circuit current withstand capability
    • Si3N4 AMB, low thermal resistance


    Currently, Leapers 62 mm SiC modules have undergone bench tests and received orders, involving applications such as grid inverters and auxiliary inverters for rail transit vehicles. Downstream customers include domestic power grid and overseas rail transit enterprises.

    Original – Leapers Semiconductor


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  • Leapers Semiconductor Delivers New Family of 1,4kV SiC Power Modules

    Leapers Semiconductor Delivers New Family of 1,4kV SiC Power Modules

    2 Min Read

    Today some applications tend to increase bus voltage, and using 1200V SiC power modules can no longer correspond to voltage requirements. Using 1700V SiC devices can solve the problem, but it comes with a price.

    Leapers Semiconductor announced a new series of 1400V SiC power modules in already familiar E0 and ED3S packages. They are the perfect solution to the mentioned problem, providing great performance at affordable price.

    At the moment the new series 1400V SiC modules come in Half-Bridge, H-Bridge, and Boost topologies.

    Leapers Semiconductor new SiC product family features:

    –       1,4kV voltage
    –       50 – 600A current
    –       3,2 – 40 mOhm Rds(on)
    –       Epoxy resin
    –       Si3N4 AMB substrate
    –       Low thermal resistance
    –       Low switching losses

    First batches of 1400V SiC power modules successfully passed field tests by the end customers and soon will be mass used in:

    –       DC fast chargers
    –       Commercial EVs
    –       Power supplies for production of hydrogen
    –       DC/DC converters

    Original – Leapers Semiconductor

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  • Leapers Semiconductor to Expand its SiC Power Modules Portfolio for ESS and Solar Markets

    Leapers Semiconductor to Expand its SiC Power Modules Portfolio for ESS and Solar Markets

    2 Min Read

    SiC power devices are changing and reshaping many industries today, providing numerous benefits over fundamental silicon-based semiconductors. One of the key advantages is a dramatically reduced power losses with increased efficiency achieved through silicon carbide exceptional material properties. SiC power semiconductors can operate at higher frequencies and temperatures delivering higher power densities and reduced cooling requirements. One of the industries benefiting much from the use of SiC power devices is the energy storage.

    Adopting silicon carbide technology, energy storage systems can deliver great energy saving and much better overall system performance.

    Reliability is one of the major requirements for any power electronics system, and ESS is no exception. That is why many ESS companies today choose SiC technology over Si. Silicon carbide power devices provide increased robustness and resistance when it comes to operating in extreme conditions. SiC temperature robustness allows to eliminate the risk of the system overheating – one of the major reasons for failure.

    Leading the development process of SiC power devices for a variety of emerging applications including vehicle electrification, photovoltaics, and, of course, battery energy storage systems, Leapers Semiconductor is expanding its portfolio of the hybrid modules with the 3-level power module to provide increased reliability for the ESS, solar, and the other 3-level applications.

    The all new DFH10AL12EZC1 power module integrates 1200V SiC MOSFET chips and 1200V IGBT chips in E2 package designed to correspond to high requirements set by the above-mentioned applications.

    Leapers Semiconductor DFH10AL12EZC1 hybrid power module features:

    • Blocking voltage:1200V
    • Rds(on): 9.5mΩ (VGS =15V)/8.3mΩ (VGS =18V)
    • Low Switching Losses
    • High current density
    • Press FIT Contact Technology
    • 175°C maximum junction temperature
    • Thermistor inside

    DFH10AL12EZC1 hybrid power modules guarantee the enhanced efficiency, improved power conversion, and increased overall reliability and durability with reduced system size.

    The other applications that will benefit from DFH10AL12EZC1 include:

    • Solar inverter Systems
    • Three-level Systems
    • Energy Storage Systems
    • High Frequency Switching Systems

    Original – Leapers Semiconductor

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  • Frost & Sullivan WBG Semiconductors Think Tank Overcoming Challenges, Unlocking Potential

    Frost & Sullivan WBG Semiconductors Think Tank: Overcoming Challenges, Unlocking Potential

    2 Min Read

    Wide Bandgap (WBG) semiconductors play a strategic role in driving innovation and creating energy efficient and high-performance electronics. Demand for these semiconductors is fueled by sustainability, industry advancements, and advanced connectivity.

    However, meeting this demand requires addressing challenges like cost, technology reliability, and geo-politic chaos among others. While the global WBG semiconductor industry is poised for unprecedented growth in the next 10 years, it would be critical to prioritize the opportunities, and effectively tackle the challenges to meet the short-term and long-term demands.

    Join Frost & Sullivan for an engaging and thought-provoking Think Tank on “WBG Semiconductors: Overcoming Challenges, Unlocking Potential” on July 28, at 10:00 AM, EDT. The distinguished panel of semiconductor professionals will share their expertise and experiences and will address pressing questions like:

    • How can WBG semiconductors play a central role in driving sustainability goals?
    • How can WBG semiconductors contribute to improving efficiency in renewable energy systems and energy infrastructure?
    • What role would regulations and standards play in driving the adoption of WBG semiconductors?
    • Electric vehicles (EVs) have long been strong advocates for WBG semiconductors – What are the current opportunities beyond EV that demand immediate action?

    Mark your calendars to engage in discussion with:

    • Prabhu Karunakaran, Industry Principal at Frost & Sullivan
    • Jonathan Robinson, VP Research, Power and Energy at Frost & Sullivan
    • Stephen Oliver, Marketing & Investor Relations at Navitas Semiconductor
    • Alexey Cherkasov, Marketing & Sales Director at Leapers Semiconductor

    Original – Frost & Sullivan

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