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Nexperia B.V. has issued an update regarding recent developments impacting its global supply chain and corporate governance structure.
The Dutch Minister of Economic Affairs has decided to temporarily suspend enforcement of an earlier order under the Goods Availability Act, citing recent positive developments. Nexperia welcomed the constructive dialogue between Dutch and Chinese authorities, viewing it as a step toward restoring stability across its supply chain. However, the company noted that full recovery will depend on continued cooperation from its operations in China.
The ruling by the Dutch Enterprise Chamber on October 7, 2025, remains in effect:
- Zhang Xuezheng remains suspended and does not act as CEO of Nexperia.
- Voting rights in Nexperia’s shares, indirectly held by Wingtech Technology Co. Ltd., remain under the control of a court-appointed independent administrator.
Stefan Tilger continues as interim CEO, with Achim Kempe as COO. Ruben Lichtenberg and Guido Dierick serve as statutory and non-executive directors, respectively.
Operationally, Nexperia confirmed that wafer shipments have not been halted. The company continues to deliver wafers and offer alternative supply routes to mitigate disruptions. These efforts are supported by dedicated teams ensuring business continuity. Other Nexperia sites across Europe and Asia remain fully operational, with phased capacity expansions planned throughout 2026.
However, the company highlighted significant challenges from its entities in China, including:
- Refusal to remit payments for wafer shipments
- Unauthorized use of company seals and creation of unapproved bank accounts
- Distribution of inaccurate communications to customers and partners
Despite these disruptions, Nexperia maintained direct shipments during October 2025, even under Chinese export restrictions. The company estimates that sufficient inventory exists within its Chinese operations to continue production for several months, and any reported shortfalls are attributed to questionable local stock management.
Nexperia reaffirmed its commitment to transparency, operational continuity, and support for its customers, partners, and stakeholders worldwide. The company will continue to issue updates as developments unfold.
Original – Nexperia
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LATEST NEWS3 Min Read
Nexperia B.V. has issued an update addressing its global operations and governance structure, as well as recent geopolitical developments affecting its supply chain. The company reaffirmed its commitment to operational transparency, continuity, and support for customers, suppliers, employees, and stakeholders worldwide.
Supply Chain Developments
Nexperia welcomed recent progress in China, where authorities have begun facilitating exports from its Chinese facility and subcontractors. While this marks a positive step, the company clarified that these measures represent temporary exemptions rather than a full reversal of export restrictions.
The company emphasized that despite recent disruptions, wafer shipments have not been halted altogether. Direct wafer deliveries to customers are ongoing, and Nexperia is actively working on alternate supply chain solutions to minimize disruptions. All sites outside China, including those in Europe and other parts of Asia, continue normal operations. Capacity expansion efforts at these sites are underway and expected to roll out in phases through 2026.
Governance and Legal Clarifications
In response to speculation surrounding recent legal developments, Nexperia confirmed that it continues to comply fully with the Dutch Government Order. The company has not received any official notice regarding changes to this order.
Regarding leadership changes, Nexperia reaffirmed that Zhang Xuezheng (Wing) remains suspended from his CEO duties, as ruled by the Enterprise Chamber of the Amsterdam Court of Appeal on October 7, 2025. Additionally, voting rights on Nexperia’s shares, indirectly held by Wingtech Technology Co. Ltd., are now under the authority of an independent court-appointed administrator. The company noted that the Enterprise Chamber ruling and the Dutch Government Order are separate legal matters.
Concerns in China Operations
Nexperia also disclosed serious governance challenges within its Chinese subsidiaries. The company stated that its entities in China are no longer operating in accordance with the global corporate governance framework and have disregarded lawful instructions from headquarters. Alleged misconduct includes:
- Refusal to process payments for wafers
- Misuse of corporate seals
- Creation of unauthorized bank accounts
- Distribution of unauthorized communications to customers and partners
Despite these challenges, Nexperia has maintained wafer deliveries throughout October 2025, even under Chinese export restrictions. Based on shipment volumes, standard inventory practices, and the export limitations in place, the company estimates that sufficient inventory should still be available within its China-based entities to support continued operations.
Nexperia concluded by emphasizing that any disruptions in shipments from China are a result of local mismanagement and are not attributable to actions taken by the company’s global leadership.
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LATEST NEWS / PRODUCT & TECHNOLOGY / Si2 Min Read
Nexperia introduced the latest additions to its ever-expanding portfolio of application-specific MOSFETs (ASFETs), whose features have been tuned to meet the exacting requirements of specific end applications. The 80 V PSMN1R9-80SSJ and 100 V PSMN2R3-100SSJ switches have been designed to provide enhanced dynamic current sharing in high-power 48 V applications that require the use of several closely matched MOSFETs connected in parallel. These include motor drive in electric vehicles like forklifts, e-scooters and mobility devices, as well as high-power industrial motors.
When connecting two or more MOSFETs in parallel to support high current capability and reduce conduction losses, it can be challenging for designers to ensure the load current is shared equally between individual devices during turn-on and turn-off. MOSFETs with the lowest VGS(th) will turn on first, causing higher thermal stress resulting in accelerated failure. In order to provide a sufficient safety margin, engineers often over-specify the MOSFETs used in their end applications.
This expensive and time-consuming approach often requires additional testing but still cannot provide guarantees on how devices will behave at higher load currents (tens of Amps). An alternative approach is to request tightly matched devices from a supplier, but this can further raise the cost of an end application.
The features of Nexperia’s PSMN1R9-80SSJ and PSMN2R3-100SSJ ASFETs eliminate the need for designers to adopt either of these approaches by providing enhanced dynamic current sharing. These switches offer a 50% lower current delta between parallel devices (for currents up to 50 A per device) at turn-on/off and also offer a VGS(th) window that is up to 50% lower (0.6 V min-to-max). This benefit, combined with the low RDS(on) of 1.9 mΩ or 2.3 mΩ helps to provide high efficiency in power switching applications.
The new ASFET devices are available in the rugged, space-efficient 8 mm x 8 mm copper-clip LFPAK88 package, delivering operating temperature ranging from -55 °C to +175 °C.
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LATEST NEWS / PRODUCT & TECHNOLOGY2 Min Read
Nexperia has introduced a new series of AEC-Q101 qualified 100 V MOSFETs in a compact CCPAK1212 package, designed to meet the growing demands of 48 V automotive systems and industrial high-current applications. With on-resistance as low as 0.99 mΩ and current capability exceeding 460 A, these devices are optimized for thermally demanding environments such as on-board chargers (OBCs), traction inverters, and battery management systems (BMS), as well as two- and three-wheel electric mobility and DC-DC converters.
As OEMs continue transitioning from 12 V to 48 V subsystems to improve efficiency and reduce vehicle weight, achieving low conduction losses becomes critical. Nexperia’s advanced trench silicon platform and proprietary copper-clip CCPAK1212 packaging enable industry-leading thermal performance (Rth(j-b) = 0.1 K/W), allowing designers to reduce or eliminate parallel MOSFET configurations, saving up to 40% PCB space compared to traditional TOLL or TOLT packages.
The devices offer a strong Safe Operating Area (SOA) of up to 400 A at 100 V, delivering the current handling and thermal reliability required for next-generation electric vehicle architectures. To support flexible thermal management and layout design, the MOSFETs are available in two variants: bottom-side cooled (CCPAK1212) and inverted top-side cooled (CCPAK1212i).
This combination of ultra-low RDS(on), high power density, and compact footprint provides an efficient and scalable solution for high-performance 48 V automotive and industrial systems.
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LATEST NEWS / PRODUCT & TECHNOLOGY2 Min Read
Nexperia introduced its first portfolio of 40-100 V automotive MOSFETs in industry standard micro-lead packages designed for use in body control, infotainment, reverse battery protection and LED lighting applications. This launch initially features 19 devices in MLPAK33-WF as well as Nexperia’s first 40 V device in MLPAK56-WF, both incorporating wettable flanks (-WF) to enable reliable solder joint inspect and AOI, thereby providing designers with a range of MOSFETs that combine flexibility of choice, a smart cost-performance balance and the capacity to quickly ramp up high-yield production, without compromising on safety.
Vehicle architectures are evolving from ECU-based control, where each function has its own unit, to domain control, and now towards zonal architectures that consolidate applications under zonal control units. At the same time, the rise of electronics-rich vehicles and the growing integration of infotainment and smart features are prompting OEMs to rethink traditional automotive design requirements to support advanced, consumer-style applications within vehicles.
This shift is driving higher MOSFET demand in DC/DC converters, inverters, and battery management systems. Operating at lower temperatures, these systems can leverage cost-effective micro-leaded devices such as Nexperia’s new MLPAK33-WF and MLPAK56-WF. Alongside their cost-performance balance, these new components meet the traditional requirements of automotive designs: AEC-Q101 qualified, robust performance, excellent board-level reliability, and side-wettable flanks supporting automated optical inspection (AOI), making them ideally suited to the evolving automotive landscape.
This new portfolio allows designers to choose from a wide selection of micro-lead MOSFETs with various RDS(on) values, offered in standardized footprints that simplify design-in and allow engineers to seamlessly migrate between MOSFET packaging, making it easy to adopt Nexperia MLPAK devices. In addition, they deliver rugged performance, excellent switching capability (low spiking and ringing) and high-power density. The high avalanche rating of these MOSFETs reduces the need to use free-wheeling diodes or bulky snubbers in switching circuits. This lowers component count and board area, thereby helping to reduce the overall system cost.
This launch marks the first of many MLPAK releases from Nexperia, reinforcing commitment to scalable, high-performance MOSFET solutions. By uniting proven quality and reliability, with supply chain strength, Nexperia enables design engineers to deliver efficient systems with confidence.
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LATEST NEWS / PROJECTS3 Min Read
Global semiconductor manufacturer Nexperia and the Hamburg University of Technology (TU Hamburg) have launched an endowed professorship in power electronic devices – a crucial field for the advancement of energy-efficient technologies. The position, held by Prof. Dr.-Ing. Holger Kapels will drive research into next-generation semiconductor components and train highly skilled engineers at TU Hamburg’s School of Electrical Engineering, Computer Science and Mathematics. As part of this initiative, Prof. Kapels will also lead the newly founded Institute for Power Electronic Devices.
In his inaugural lecture, titled “Innovative Power Semiconductor Devices as a Key Technology for an Electrified Future,” Prof. Kapels outlined how compound semiconductors based on silicon carbide (SiC) and gallium nitride (GaN) are enabling transformative improvements in energy efficiency – particularly in electric vehicles, industrial systems, and data centers. Wide bandgap (WBG) materials such as SiC, GaN, and aluminum scandium nitride (AlScN) allow for higher switching frequencies, lower conduction losses, and more compact device footprints. compared to traditional silicon.
The new institute will focus on power semiconductors based on Silicon, SiC, GaN and aluminum scandium nitride (AlScN), new device architectures, including vertical GaN structures and machine-learning-based fault prediction systems. Additional research priorities include modeling the reliability and ruggedness of power devices under extreme operating conditions.
Opening remarks at the event were delivered by TU Hamburg President Prof. Dr. Andreas Timm-Giel. Representing the Hamburg Senate, State Secretary for Science Dr. Eva Gümbel emphasized the broader impact of the new chair: “This endowed professorship addresses one of the most important enabling technologies of our time. Power electronics are vital to sustainable energy supply and industrial innovation. With Prof. Kapels, TU Hamburg gains a leading researcher who will shape both science and education in this strategic field.”
Ansgar Thorns, Vice president R&D at Nexperia Germany, highlighted the professorship’s significance for the company and the broader innovation ecosystem: “This professorship is an investment in future technologies, in local talent, and in Hamburg as a center for semiconductor excellence. Fostering innovation and developing the next generation of engineers go hand in hand – and both are critical to strengthening our deep-tech ecosystem.”
The new chair is part of Nexperia’s long-term innovation strategy. The company has a manufacturing legacy in Hamburg that dates back over a century to the founding of the Valvo radio tube factory in 1924 – a pioneering site in German electronics history. Today, Nexperia’s Hamburg facility produces approximately 25% of the world’s small-signal diodes and transistors. Since 2017, the site has expanded from 950 to around 1,600 employees and undergone significant technological modernization, including a strategic expansion into power semiconductors.
“This is Nexperia’s first endowed professorship and a milestone for our engagement with research and education,” Thorns added. “We’re proud to partner with TU Hamburg – a strong academic institution – to shape the future of energy-efficient semiconductor technologies in Germany and beyond.”
Beginning in the winter semester 2025/26, Prof. Kapels will teach “Electrical Engineering I” and “Wide Bandgap Semiconductors”, helping to equip a new generation of engineers with the expertise needed to support the global shift toward electrification and decarbonization.
Original – Nexperia
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LATEST NEWS / PRODUCT & TECHNOLOGY / SiC / WBG2 Min Read
Nexperia announced the addition of two 1200 V 20 A silicon carbide (SiC) Schottky diodes to its continuously expanding portfolio of power electronics components. The PSC20120J and PSC20120L have been designed to address the demand for ultra-low power loss rectifiers which enable high-efficiency energy conversion in industrial applications. As such they are ideally suited for the power supply units (PSUs) in power-intensive artificial intelligence (AI) server infrastructure, telecommunications equipment and solar inverter applications.
These new Schottky diodes deliver leading-edge performance through temperature-independent capacitive switching and zero recovery behavior that delivers an outstanding figure-of-merit (QC x VF). Furthermore, they exhibit switching performance that is almost entirely independent of current and switching speed variations. The merged PiN Schottky (MPS) structure of these devices provides additional benefits, such as outstanding robustness against surge currents as evidenced by their high peak-forward current (IFSM). This feature mitigates the requirement for additional protection circuitry, thereby significantly reducing system complexity and enabling engineers to achieve higher efficiency using smaller form factors in rugged high-voltage applications.
This PSC20120J is encapsulated in a Real-2-Pin D2PAK R2P (TO-263-2) surface-mount device (SMD) power plastic package, while the PSC20120L is housed in a Real-2-Pin TO247 R2P (TO-247-2) through-hole power plastic package. These thermally stable packages enhance device reliability in high-voltage applications at operating temperatures up to 175 °C. Designers can be further reassured by Nexperia’s reputation as a proven manufacturer of high-quality semiconductor products in a range of semiconductor technologies supported by a robust supply chain.
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