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Micro Commercial Components (MCC) has expanded its silicon carbide portfolio with the SIC1065G5M-BP, a 650 V, 10 A silicon carbide (SiC) Schottky Barrier Diode (SBD) designed for high-efficiency power conversion applications. Utilizing advanced Merged PiN Schottky (MPS) technology, the device combines zero reverse recovery, low forward voltage, and high-temperature operation to reduce switching losses and improve system efficiency in industrial and energy applications.
As switching frequencies continue to increase in modern power converters, conventional silicon rectifiers become a significant source of switching losses. The SIC1065G5M-BP addresses this challenge by eliminating reverse recovery current, enabling cleaner, more efficient operation in high-frequency power conversion systems.
The device is particularly well suited for applications where efficiency, thermal performance, and reliability are critical.
The diode is built using Merged PiN Schottky (MPS) technology, combining the low-loss characteristics of a Schottky diode with improved surge current capability.
Key electrical features include:
- 650 V reverse voltage rating
- 10 A average forward current
- Maximum forward voltage of 1.7 V
- Zero reverse recovery current
- 60 A non-repetitive surge current capability
The absence of reverse recovery charge significantly reduces switching losses, making the device suitable for high-frequency converter topologies.
The SIC1065G5M-BP supports junction temperatures of up to 175°C, enabling reliable operation in thermally demanding environments while simplifying cooling system design.
Packaged in the industry-standard TO-220AC package, the device provides straightforward heatsink attachment and effective thermal management for higher-power applications.
The new SiC Schottky Barrier Diode is designed for a range of high-efficiency power conversion systems, including:
- Solar inverters
- Power factor correction (PFC) circuits
- Motor drives
- EV charging infrastructure
- Industrial power supplies
Original – Micro Commercial Components
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Micro Commercial Components (MCC) has introduced the MCMWF190P06LQ-TP, a compact AEC-Q101 qualified 60 V P-channel MOSFET designed for automotive high-side switching and power management applications. Packaged in a 2 mm × 2 mm DFN2020-6 package with side-wettable flanks (SWF), the device combines low conduction losses, efficient thermal performance, and enhanced manufacturing reliability for space-constrained automotive electronic modules.
As automotive ECUs continue to shrink while integrating more functionality, designers require compact power devices capable of delivering reliable switching performance without compromising efficiency or thermal performance.
The MCMWF190P06LQ-TP addresses these requirements with:
- 60 V drain-source voltage rating
- Maximum 190 mΩ RDS(on) at VGS = -10 V
- Continuous drain current up to 5.7 A
- Advanced Trench MV MOSFET technology
- Compact DFN2020-6 (SWF) package
The 60 V rating provides sufficient voltage margin for 12 V automotive systems that experience transient voltage spikes.
The device utilizes MCC’s DFN2020-6 Side-Wettable Flank (SWF) package, which improves solder joint visibility during manufacturing and enables more reliable automated optical inspection (AOI).
The compact 2 mm × 2 mm footprint also supports high PCB density in modern automotive electronic control modules while maintaining low thermal resistance for efficient heat dissipation.
The new MOSFET is intended for a variety of automotive power management functions, including:
- Reverse battery protection
- High-side load switches
- Body control modules (BCMs)
- Battery management systems (BMS)
- Automotive lighting
- Motor control
- DC-DC converters
The MCMWF190P06LQ-TP is available now as part of MCC’s expanding automotive MOSFET portfolio, providing designers with a compact, automotive-qualified solution for high-side switching and power management applications in next-generation vehicle electronics.
Original – Micro Commercial Components
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Micro Commercial Components (MCC) has expanded its automotive MOSFET portfolio with two AEC-Q101 qualified 60 V P-channel MOSFETs designed for high-side switching and power management applications. Available in both compact PDFN5060 and industry-standard DPAK packages, the new devices provide automotive designers with flexible packaging options while delivering low conduction losses, high current capability, and robust thermal performance.
The new automotive-grade MOSFETs target 12 V and 24 V vehicle power architectures, where efficient high-side switching is required across a range of body electronics, power distribution, and control applications.
The portfolio includes:
- MCAC051P06Q-TP (PDFN5060 package)
- MCU055P06LQ-TP (DPAK package)
Both devices utilize MCC’s advanced Trench Power MV MOSFET technology to reduce switching and conduction losses while maintaining strong current handling capability.
The new 60 V P-channel MOSFETs offer:
- AEC-Q101 automotive qualification
- 60 V drain-source voltage rating
- Low RDS(on) down to 51 mΩ
- Continuous drain current up to 24 A
- Low thermal resistance for improved heat dissipation
- Available in compact PDFN5060 and DPAK package options
By offering both surface-mount package formats, MCC enables designers to optimize layouts based on application requirements.
The compact PDFN5060 package supports space-constrained automotive electronics, while the widely adopted DPAK package provides compatibility with established manufacturing processes and existing PCB designs.
Despite the different mechanical formats, both devices maintain similar electrical performance, allowing engineers to select the most suitable package without sacrificing efficiency.
The new MOSFETs are designed for automotive power management applications including:
- High-side load switching
- Power distribution
- Battery-powered control systems
- Automotive power management modules
- 12 V and 24 V vehicle electronics
The MCAC051P06Q-TP and MCU055P06LQ-TP are available now as part of MCC’s expanding portfolio of AEC-Q101 qualified automotive power semiconductor solutions.
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Micro Commercial Components (MCC) has announced the completion of an ownership transition that establishes a new ownership structure for the company and supports its plans for increased operational flexibility, independence, and long-term growth.
On June 3, 2026, the transfer of 100% of the equity interests in Caswell Industries Limited, MCC’s holding company, was completed in favor of Hong Kong Linkrich Trading Company Limited. Following the transaction, MCC’s former parent company no longer retains ownership, governance, or control rights over MCC’s business operations.
As a result of the transaction, Caswell Industries Limited is now wholly owned by Hong Kong Linkrich Trading Company Limited, while Yangzhou Yangjie Electronic Technology Co., Ltd. no longer holds any ownership interest within MCC’s holding structure.
According to the company, the completed transition establishes a new ownership foundation intended to support long-term operational focus, flexibility, and business agility.
Under the new structure, MCC will operate with separate leadership, governance, and decision-making processes. The company stated that this increased autonomy is expected to enhance responsiveness to customer requirements, strengthen supply chain planning capabilities, and support customer-focused innovation initiatives.
MCC emphasized that it will continue to operate under a structured and legally compliant framework to ensure business continuity and operational stability across all regions.
The company also addressed recent regulatory developments within the European Union that have affected the broader semiconductor supply environment. MCC noted that current EU regulations provide a case-by-case authorization process that may permit specific transactions subject to review and approval by relevant national authorities.
The company highlighted that such authorizations are not automatic and must be evaluated and approved individually for each transaction or contract. MCC stated that it is actively supporting customers in navigating these regulatory processes where applicable.
Alongside the ownership transition, MCC is pursuing initiatives aimed at strengthening its global supply chain and operational footprint. These efforts include expanding operational flexibility across multiple manufacturing locations, enhancing supply chain resilience, and advancing diversification initiatives in Southeast Asia.
According to the company, these measures are intended to support long-term supply continuity and provide customers with reliable and scalable access to semiconductor components.
MCC also reaffirmed its commitment to compliance, transparency, and responsible business practices. The company stated that it will continue to operate in accordance with applicable international regulations while maintaining a conservative compliance framework and providing proactive communication with customers and partners.
Looking ahead, MCC described the ownership transition as a significant milestone in its corporate development. The company believes that its new ownership structure, independent leadership, and strategic direction will provide a stronger foundation for future growth and customer engagement.
MCC added that it will continue investing in manufacturing diversification, supply chain resilience, and operational agility to enhance responsiveness to evolving market requirements. These initiatives are intended to support the delivery of high-quality solutions through a more flexible, diversified, and future-ready global supply chain.
The company stated that it remains focused on creating new opportunities for collaboration, innovation, and sustainable growth while continuing to support customers and partners worldwide.
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Micro Commercial Components has launched the MCACD8D5N06YL, a dual N-channel MOSFET array designed to improve efficiency and integration in space-constrained power systems.
The device integrates two matched 60 V MOSFETs within a single compact PDFN5060-8D package, reducing component count and simplifying gate drive design. This integration enables more compact power stage layouts while maintaining strong electrical and thermal performance.
Featuring a low maximum RDS(on) of 8.5 mΩ and built on split-gate trench MOSFET technology, the device minimizes both conduction and switching losses. The matched characteristics of the dual MOSFET configuration ensure balanced current sharing and predictable switching behavior—key advantages for synchronous rectification and parallel power stage designs.
With support for up to 50 A continuous drain current and a thermally efficient package design, the MCACD8D5N06YL is well suited for high-current applications such as DC-DC converters, load switches, and motor control systems across consumer and industrial markets.
From a market perspective, this product reflects the growing demand for higher integration in low-voltage power stages, particularly in AI servers, telecom systems, and compact industrial electronics. While wide-bandgap devices continue to dominate high-voltage segments, advanced silicon MOSFET integration—such as dual or multi-die configurations—remains critical for improving power density, reducing PCB footprint, and optimizing system cost in high-current, low-voltage applications.
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Micro Commercial Components has introduced the MCAC Power MOSFET Series, a new family of 40 V and 100 V N-channel and P-channel devices designed to improve efficiency, thermal performance, and PCB space utilization in modern power systems.
Built on advanced split-gate trench MOSFET technology, the MCAC series delivers low RDS(on) and optimized switching characteristics, reducing both conduction and switching losses. This enables higher system efficiency and supports increasing power density requirements across industrial, consumer, and automotive applications.
The portfolio includes both N-channel and P-channel options, providing flexibility for high-side and low-side switching configurations. Automotive-grade variants compliant with AEC-Q101 are also available, ensuring reliability in demanding environments such as EV subsystems and automotive electronics.
Packaged in compact DFN5060 surface-mount formats, the devices offer strong thermal performance with low junction-to-ambient resistance, enabling efficient heat dissipation in space-constrained designs.
From a market perspective, the MCAC series aligns with the continued expansion of 40 V–100 V power architectures, particularly in 48 V systems, battery-powered applications, and distributed power designs. While wide-bandgap technologies are gaining traction at higher voltages, advanced silicon MOSFET platforms remain critical in low-voltage stages where cost efficiency, integration, and thermal optimization are key design priorities.
This launch reinforces MCC’s strategy to strengthen its presence in high-volume, low-voltage power segments by delivering incremental performance improvements and design flexibility for next-generation power electronics systems.
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Micro Commercial Components has introduced the MCGD115NP10L, a 100 V dual N- and P-channel MOSFET designed to simplify circuit design and reduce footprint in space-constrained power systems.
By integrating complementary N- and P-channel MOSFETs into a single DFN3333-D package, the device reduces component count and PCB complexity, particularly in high-side and low-side switching configurations. This integration enables more compact layouts while maintaining efficient switching performance.
The device offers a maximum N-channel RDS(on) of 115 mΩ at VGS = 10 V and supports current up to 10 A, making it suitable for applications such as DC-DC converters, load switches, motor drivers, and general power management circuits. Built on trench low-voltage MOSFET technology, it delivers low conduction losses and stable operation in high-density designs.
Additional advantages include strong thermal performance and side-wettable flanks for improved automated optical inspection (AOI) and assembly reliability, supporting high-volume manufacturing environments.
From a market perspective, this product aligns with the increasing demand for higher integration in low- to mid-voltage power stages, particularly in consumer electronics, industrial systems, and compact power modules. While wide-bandgap devices dominate higher voltage segments, integrated silicon MOSFET solutions like this remain critical for optimizing cost, space, and design simplicity in lower voltage applications.
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Micro Commercial Components has launched the MCTLD58N04Y, a 40 V N-channel MOSFET engineered for high-current power applications such as motor drivers, power tools, and industrial power systems.
The device features an ultra-low RDS(on) of 0.58 mΩ and supports a high continuous drain current of up to 639 A (depending on thermal conditions), enabling efficient conduction and stable operation under heavy load. This combination is particularly valuable in low-voltage, high-current designs where minimizing conduction losses is critical.
Built on split-gate trench MOSFET technology, the MCTLD58N04Y delivers low switching losses and improved efficiency, supporting compact system designs where thermal management and board space are key constraints. The MOSFET also offers strong avalanche ruggedness, making it suitable for handling transient and inductive load conditions commonly found in motor drive and industrial environments.
The device is housed in a thermally efficient TOLL-8L package, which provides low thermal resistance and effective heat dissipation, supporting reliable operation in demanding applications.
From a market perspective, this product aligns with the growing demand for high-current, low-voltage MOSFETs in electrified systems, including battery-powered tools, industrial automation, and emerging 48 V architectures. While wide-bandgap technologies dominate higher voltage segments, advanced silicon MOSFETs like this remain essential for optimizing efficiency and cost in low-voltage, high-current stages.
MCC’s latest release reinforces its focus on delivering high-performance silicon solutions for mainstream power applications where scalability, robustness, and cost-effectiveness are key decision factors.
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Micro Commercial Components has introduced the MCACD6D3N06Y, a high-performance 60 V N-channel MOSFET designed to address efficiency, thermal, and space constraints in modern power systems.
The device features an ultra-low maximum RDS(on) of 6.3 mΩ, enabling reduced conduction losses and improved overall efficiency. Combined with a low junction-to-case thermal resistance of 1.6°C/W, the MOSFET supports effective heat dissipation, simplifying thermal management in high-power designs.
Built on advanced split-gate trench MOSFET technology, the MCACD6D3N06Y delivers fast switching performance and stable operation across demanding applications. Its 60 V rating makes it well-suited for 48 V power architectures, which are increasingly common in AI data centers, telecom infrastructure, and industrial systems.
The device is housed in a compact PDFN5060-8D package with an exposed thermal pad, enabling high power density and efficient board-level integration. A maximum junction temperature of 175°C further supports reliability in harsh operating environments.
From a market perspective, this product aligns with the growing shift toward 48 V intermediate power architectures, particularly in AI servers and high-performance computing systems. While wide-bandgap devices dominate high-voltage segments, advanced silicon MOSFETs like this remain critical for low-voltage, high-current stages—where efficiency, cost, and thermal performance are key design considerations.
MCC’s latest MOSFET reinforces its positioning in high-volume, cost-sensitive power applications, where incremental efficiency gains and compact packaging directly translate into system-level advantages.
Original – Micro Commercial Components
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Micro Commercial Components has introduced its SICW Series Gen4 silicon carbide Schottky barrier rectifiers, targeting improved efficiency, thermal performance, and reliability in high-voltage power conversion applications.
Built on MCC’s Gen4 Junction Barrier Schottky (JBS) SiC technology, the SICW Series delivers zero reverse recovery behavior combined with a low forward voltage drop between 1.45 V and 1.6 V. This significantly reduces both switching and conduction losses, making the devices well-suited for high-frequency power systems.
The product family covers voltage ratings from 650 V to 1200 V and current ranges from 10 A to 40 A, supporting a wide range of industrial, transportation, and energy applications. A positive temperature coefficient of forward voltage enables stable current sharing in parallel configurations, while a maximum junction temperature of 175°C enhances robustness under demanding thermal conditions.
From a packaging perspective, the devices are offered in TO-247AB and TO-247AD formats with large heat-dissipation tabs, enabling efficient thermal management and simplified system integration.
From a market standpoint, this release aligns with ongoing industry trends toward higher switching frequencies and increased power density, particularly in industrial drives, EV infrastructure, and renewable energy systems. By improving efficiency and reducing cooling requirements, MCC’s Gen4 SiC rectifiers support system-level cost optimization and compact design—key factors as electrification and AI-driven power demand continue to scale.
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