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Navitas Semiconductor and Magnachip Semiconductor have announced a strategic partnership to accelerate the adoption of silicon carbide (SiC) technologies in high-voltage (HV) and ultra-high-voltage (UHV) power applications. Under the agreement, Magnachip will license Navitas’ GeneSiC™ Trench-Assisted Planar (TAP) technology to expand its power semiconductor portfolio into the SiC market.
The licensing agreement covers GeneSiC technologies with voltage ratings of 1200 V, 2300 V, 3300 V, and higher, enabling Magnachip to develop SiC devices for next-generation high-power conversion systems.
As part of the collaboration, Magnachip will also gain access to Navitas’ established SiC supply chain and materials ecosystem to support faster product development and market entry. The companies plan to transfer, qualify, and internalize the licensed technology at Magnachip’s manufacturing facility in South Korea while maintaining compatibility with Navitas’ existing technology platform.
The partnership targets a broad range of high-power applications, including:
- Energy transmission and grid infrastructure
- Battery energy storage systems (BESS)
- Industrial electrification
- Automotive power systems
- High-voltage power conversion
- Ultra-high-voltage power electronics
The companies stated that the agreement extends beyond the current SiC licensing arrangement, with additional areas of collaboration expected to be announced in the future.
For Navitas, the partnership expands the reach of its GeneSiC technology into the high-voltage power semiconductor market through licensing and technology collaboration. For Magnachip, the agreement provides a pathway into the rapidly growing SiC market, complementing its existing MOSFET and power semiconductor portfolio while enabling the development of higher-voltage, higher-efficiency power conversion solutions.
Original – Magnachip Semiconductor
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Magnachip Semiconductor Corporation has appointed Chae Lee as Chief Executive Officer, effective July 1, 2026. Lee is also expected to join the company’s Board of Directors following the commencement of his appointment. He succeeds Camillo Martino, who has served as Interim Chief Executive Officer since August 2025 and will continue in his role as Chairman of the Board of Directors.
The appointment marks a new phase in Magnachip’s leadership as the company continues to expand its focus on power semiconductor technologies and pursue growth opportunities across high-value semiconductor markets.
Lee brings more than three decades of experience in the global semiconductor industry, with expertise spanning power semiconductors, power management integrated circuits (PMICs), sensors, audio amplifiers, and system-level semiconductor solutions. Throughout his career, he has held leadership positions across engineering, applications, sales, marketing, operations, and executive management.
Most recently, Lee served as Chief Executive Officer of Tagore Technology, where he led the company’s development of gallium nitride (GaN) semiconductor technologies for both radio frequency (RF) and power applications.
Prior to joining Tagore Technology, Lee held senior leadership roles at several major semiconductor companies, including Insyte Systems, NXP Semiconductors, and Maxim Integrated Products. During his tenure at Maxim, he played a key role in driving high-margin revenue growth through innovative product development within the company’s mobility business.
According to Chairman Camillo Martino, Lee’s combination of technical expertise, operational leadership, and commercial experience makes him well suited to lead Magnachip through its next stage of growth.
Martino noted that Lee’s background across power integrated circuits and system-level semiconductor solutions closely aligns with Magnachip’s strategy to strengthen its product portfolio, accelerate innovation, and expand its presence in attractive power semiconductor markets.
He also expressed appreciation to the company’s employees for their commitment during the past year and stated that he looks forward to working closely with Lee and the executive leadership team in his continued role as Chairman of the Board.
Commenting on his appointment, Lee described Magnachip as a company with a strong heritage in power semiconductors, experienced engineering talent, valuable manufacturing capabilities, and an expanding pipeline of next-generation products.
He indicated that Magnachip is well positioned to capitalize on long-term growth opportunities across several key markets, including:
- Artificial intelligence (AI)
- Data center infrastructure
- Industrial electronics
- Automotive systems
- Robotics
- Communications equipment
- Computing platforms
- Consumer electronics
Lee also emphasized his commitment to working closely with the Board of Directors and employees to build upon the company’s recent progress while creating long-term value for customers, employees, and shareholders.
Original – Magnachip Semiconductor
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Magnachip Semiconductor Corporation has introduced two new 6th-generation 600 V Super Junction (SJ) MOSFETs designed to address the increasing efficiency, power density, and reliability requirements of AI server power supplies and other high-performance power conversion applications.
The new devices feature low on-resistance values of 36 mΩ and 37 mΩ, helping reduce conduction losses and improve overall power conversion efficiency. Both products also integrate a Zener diode between the gate and source terminals, providing enhanced protection against electrostatic discharge (ESD) events and improving long-term device reliability in demanding operating environments.
In addition to improved electrical performance, the new generation incorporates a significantly smaller die size compared with previous Magnachip SJ MOSFET generations, enabling higher integration density and greater design flexibility for power system developers.
One of the newly released devices, the MMTB60R037G6FZVRH, incorporates a Fast Recovery Body Diode (FRD) structure that reduces reverse recovery losses and enhances switching performance during high-frequency operation.
These characteristics are particularly important for AI server power supplies, where maximizing efficiency, reducing thermal dissipation, and increasing power density have become critical design priorities as server rack power levels continue to rise.
Both devices are housed in a TOLL (TO-Leadless) package and are targeted at high-current, high-power applications. The package incorporates a Kelvin Source connection, which minimizes parasitic inductance, improves switching behavior, and enables more stable operation under fast switching conditions.
The launch comes as demand accelerates for more efficient power semiconductors across AI infrastructure, electric vehicle charging systems, telecommunications equipment, and industrial power supplies.
Modern power architectures increasingly require:
- Higher conversion efficiency
- Improved thermal performance
- Greater power density
- Enhanced reliability
- Reduced system footprint
Super Junction MOSFET technology continues to play a critical role in achieving these objectives, particularly in AC-DC front-end stages, power factor correction (PFC) circuits, and high-voltage switching applications.
According to market research firm Omdia, the discrete semiconductor market serving computing and data storage applications is projected to grow from approximately $3.7 billion in 2025 to approximately $5.9 billion by 2030, representing a compound annual growth rate (CAGR) of roughly 9%.
The expansion of AI infrastructure, cloud computing, and high-density server architectures is expected to be a major driver of this growth, increasing demand for advanced power semiconductor solutions capable of delivering higher efficiency and greater power density.
Hyuk Woo, Chief Technology Officer of Magnachip, highlighted the importance of power semiconductor performance in next-generation systems, noting that growing demand across AI infrastructure, EV charging networks, and industrial power applications is creating increasing requirements for efficiency and reliability.
According to the company, the new 6th-generation SJ MOSFET platform combines low on-resistance, enhanced switching performance, and improved robustness to help customers optimize power conversion efficiency while reducing system size and thermal management requirements.
While developed with AI server power systems in mind, the new MOSFETs are also suitable for a broad range of high-efficiency power conversion applications, including:
- AI and cloud server power supplies
- Telecom infrastructure power systems
- Industrial power supplies
- EV charging equipment
- Data center power distribution
- High-power AC-DC converters
- Renewable energy power conversion systems
With the introduction of these devices, Magnachip continues to expand its power semiconductor portfolio to address the growing demand for efficient, reliable, and high-density power solutions across data center, industrial, and electrification markets.
Original – Magnachip Semiconductor
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Magnachip Semiconductor Corporation announced that it will present its medium-voltage (MV) MOSFET portfolio for AI servers and data center power systems at PCIM Europe 2026 in Nuremberg, Germany.
The company will highlight MOSFET solutions designed for server power supply units (PSUs), high-performance computing (HPC), industrial power systems, and solar inverters. These products target the growing need for higher power efficiency, increased power density, and improved thermal management in AI-driven infrastructure.
Magnachip’s MV MOSFET family is based on advanced Shielded-Gate Trench (SGT) technology, supporting improved current density and switching performance while enabling compact, high-temperature power designs. The devices are intended for critical power conversion stages such as synchronous rectification in AI server and HPC power architectures.
In addition to MV MOSFETs, Magnachip will showcase its broader power semiconductor portfolio, including low-voltage MOSFETs, super-junction MOSFETs, IGBTs, silicon carbide devices, and power ICs supporting applications across automotive, industrial automation, energy storage, and renewable energy systems.
Original – Magnachip Semiconductor
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Magnachip Semiconductor Corporation reported first-quarter 2026 revenue from continuing operations of $46.2 million, near the midpoint of its guidance range and up 13.9% sequentially and 3.3% year-over-year.
Gross margin from continuing operations reached 15.6%, above the midpoint of guidance and up from 9.3% in the previous quarter, though below the 20.9% reported in the prior-year period. The company reported a GAAP operating loss of $7.2 million and a loss from continuing operations of $4.7 million, or $0.13 per share. On a non-GAAP basis, adjusted operating loss was $6.5 million and adjusted EBITDA was negative $3.6 million.
CEO Camillo Martino said the company delivered better-than-seasonal revenue growth, supported by execution and prior inventory and channel actions. He noted that Magnachip is showing early progress in its multi-year transformation, supported by the 55 new-generation products launched in 2025 and an accelerated pace of product development.
Recent product highlights include the launch of an 8th-generation ultra-low Rss(on) 12 V BatteryFET for smartphone battery efficiency, as well as 8th-generation 40 V and 60 V medium-voltage MOSFETs for servers and high-performance PCs. Magnachip said it remains on track to launch 55 new-generation products in 2026.
For the second quarter of 2026, Magnachip expects revenue from continuing operations between $44.5 million and $48.5 million, roughly flat sequentially at the midpoint and down 2.3% year-over-year. Gross margin is expected to improve to a range of 17% to 19%.
From a market perspective, the results suggest early stabilization in Magnachip’s power semiconductor business, with server, PC and mobile power devices forming key areas of focus. The company’s transformation remains centered on improving product competitiveness, utilization and margins through new-generation power solutions.
Original – Magnachip Semiconductor
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Magnachip Semiconductor Corporation will present its latest power semiconductor innovations at PCIM Europe 2026 (Hall 6, Booth 337, June 9–11 in Nuremberg), highlighting its strategic expansion beyond consumer electronics into automotive, industrial, and energy applications.
At the event, Magnachip will showcase a broad portfolio including MOSFETs, IGBTs, and Power ICs, with a strong focus on motor control and power conversion solutions. The company is positioning its technologies to address growing demand across electric vehicles, industrial automation, robotics, and AI-driven infrastructure.
A key theme of the exhibition is Magnachip’s transition from its established strength in consumer electronics—where it has long supplied major global brands—toward higher-value industrial and automotive markets. This includes IGBT and module solutions for high-power applications such as solar inverters, energy storage systems (ESS), and AI servers, supported by advanced packaging technologies for improved power density and thermal performance.
The company will also emphasize its growing capabilities in motor control, including solutions for EV traction inverters and industrial drives. Collaboration with Hyundai Mobis is highlighted as a strategic step to strengthen its position in electrified mobility and inverter technologies.
From a market perspective, Magnachip’s presence at PCIM reflects a broader strategic pivot toward higher-growth, higher-margin segments within the power semiconductor industry. As demand accelerates in electrification, automation, and AI infrastructure, suppliers are increasingly diversifying beyond traditional consumer markets to capture new opportunities in industrial and automotive power systems.
With over 55 new products launched in 2025 and more than 40 additional releases planned for 2026, Magnachip is signaling an aggressive roadmap to enhance its competitiveness in the evolving power semiconductor landscape.
Original – Magnachip Semiconductor
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Magnachip Semiconductor Corporation has introduced its 8th-generation 40 V and 60 V medium-voltage (MV) MOSFETs, aimed at improving efficiency and power density in server and high-performance computing (HPC) power supply units.
The new devices are optimized for synchronous rectification (SR) stages, a critical part of modern server power architectures. Leveraging advanced split-gate trench (SGT) technology, the 40 V variants deliver up to 40% higher current density and approximately 25% faster switching speeds compared to the previous generation, while the 60 V versions achieve up to 50% higher current density and 60% faster switching.
Additional enhancements include fast anti-parallel diode technology to improve switching stability and reduce residual current effects. The MOSFETs support operation up to 175°C and are packaged in compact PDFN56 formats, enabling high-density designs required in AI servers and HPC systems.
Magnachip is expanding its portfolio with multiple RDS(on) options, including 0.8 mΩ and 1.0 mΩ (40 V) and 1.05 mΩ (60 V), following the earlier release of a 0.7 mΩ device. This broader lineup allows designers to optimize trade-offs between efficiency, thermal performance, and cost.
From a market perspective, this launch directly targets the fast-growing server power supply segment, driven by AI and data center expansion. Industry projections indicate steady growth in this market, reinforcing demand for high-efficiency, low-voltage power semiconductors.
Strategically, Magnachip is strengthening its position in the competitive low- to mid-voltage MOSFET space, where silicon technologies continue to dominate critical power stages despite the rise of GaN and SiC. By focusing on performance improvements in synchronous rectification, the company is addressing a key bottleneck in power conversion efficiency for next-generation computing infrastructure.
Original – Magnachip Semiconductor
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Magnachip Semiconductor Corporation reported financial results for the fourth quarter and full year 2025, highlighting continued progress in its strategic shift toward power semiconductors.
For the fourth quarter, consolidated revenue from continuing operations, which includes the Power Analog Solutions and Power IC businesses, reached $40.6 million, near the midpoint of the company’s guidance range of $38.5 million to $42.5 million. Consolidated gross profit margin from continuing operations was 9.3%, slightly above the midpoint of the projected 8.0% to 10.0% range.
Product revenue in the communications segment increased 24% sequentially and grew 68% compared with the same quarter a year earlier.
During the fourth quarter, Magnachip launched 24 new-generation products. Across the full year 2025, the company introduced 55 new-generation products, a significant increase compared with four launches in 2024.
The company also signed a strategic agreement with Hyundai Mobis to expand its industrial business through jointly developed IGBT technology.
Magnachip implemented several cost-reduction initiatives during the year, including operating expense optimization and a workforce reduction program. These measures are expected to generate more than $2 million in annualized savings starting in the fourth quarter of 2025.
In addition, the company invested $21.4 million in upgrading its Gumi fabrication facility during 2025, with $17.0 million of the investment financed through equipment loans.
According to CEO Camillo Martino, Magnachip has taken structural steps to simplify its business, reduce costs, and sharpen its focus on power semiconductor markets. The company aims to strengthen its competitiveness, improve margins over time, and position itself for a more consistent recovery despite challenging near-term market conditions.
Original – Magnachip Semiconductor
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Magnachip Semiconductor Corporation announced a new series of Insulated Gate Bipolar Transistors (IGBTs) for solar inverters and industrial Energy Storage Systems (ESS), reinforcing its position in high-efficiency power semiconductors.
The new generation 650 V and 1200 V discrete IGBTs are engineered for inverter and ESS platforms, delivering higher current capacity via a significantly reduced cell pitch versus the prior generation. An improved Reverse Bias Safe Operating Area (RBSOA) enhances stability under harsh high-voltage and high-current conditions. Devices are offered in standard TO-247 and high-capacity TO-247 Plus packages to give designers flexibility across a wide range of power levels.
Magnachip already supplies IGBTs to major solar inverter OEMs and is expanding its portfolio to span residential through industrial systems up to 150 kW, enabling customers to align device selection with operating environments.
The new IGBTs leverage Advanced Field Stop Trench technology and refined process design. A ~40% reduction in cell pitch significantly increases current capacity within the same die area, while RBSOA is enhanced by more than 30% for robust operation across demanding conditions.
Roadmap updates include a high-current series up to 650 V/150 A and new 750 V products in the first half of 2026. Magnachip also plans a TO-247-4Lead option with a Kelvin source pin to improve switching efficiency—broadening design choices for higher-capacity, higher-efficiency solar and ESS systems.
“This new generation IGBT series enhances efficiency and reliability through refined process technologies,” said Hyuk Woo, CTO of Magnachip. “Building on our market-proven technology and production capabilities, we will continue to expand our solution lineup to better address diverse customer needs.”
Original – Magnachip Semiconductor
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Magnachip Semiconductor Corporation has announced its financial results for the third quarter of 2025, delivering performance in line with guidance while executing key initiatives to improve operational efficiency and focus on its core power semiconductor business.
Consolidated revenue from continuing operations, which includes the Power Analog Solutions (PAS) and Power IC (PIC) businesses, was $45.9 million, falling near the mid-point of the company’s guidance range of $44.0 to $48.0 million. Gross profit margin from continuing operations was 18.6 percent, also within guidance, though at the low end of the 18.5 to 20.5 percent range.
Product revenue from the Communications segment showed strong momentum, growing 34 percent sequentially and 95 percent year-over-year.
Recent operational and strategic highlights include:
- Execution of several cost-reduction initiatives, including a headcount reduction program, which are expected to generate approximately $2.5 million in annualized savings
- A revised investment plan for the Gumi fab upgrade, reducing capital expenditures by over 50 percent compared to the previously forecasted $65 to $70 million over the next two years
- Introduction of 30 new-generation PAS products in the first nine months of 2025, with plans to launch at least 20 more in the fourth quarter
- Signing of a strategic agreement with Hyundai Mobis to expand Magnachip’s industrial business through co-developed IGBT technology
Camillo Martino, Chief Executive Officer of Magnachip, stated:
“Our top priority is to stabilize our financial position and establish a solid foundation for business recovery. At the same time, we have restructured our go-to-market organization and are revitalizing our product portfolio to enhance our competitiveness, particularly in China. In the first three quarters of 2025, we launched 30 new-generation products, compared to only two during the same period in 2024. We currently plan to launch at least another 20 by year-end, bringing our total for 2025 to at least 50, compared to just four in all of 2024.”He added, “We recognize that we are entering a challenging period ahead as we right-size into a pure-play power products company. However, we believe that we are moving in the right direction and are committed to exploring all strategic options to position Magnachip for success.”
Original – Magnachip Semiconductor
