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LATEST NEWS2 Min Read
Reflex Drive, a deep tech startup from India has selected power devices from Infineon Technologies AG for its next-generation motor control solutions for unmanned aerial vehicles (UAVs). By integrating Infineon’s OptiMOS™ 80 V and 100 V , Reflex Drive’s electric speed controllers (ESCs) achieve improved thermal management and higher efficiency, enabling high power density in a compact footprint.
Additionally, the use of Infineon’s MOTIX™ IMD701 controller solution – which combines the XMC1404 microcontroller with the MOTIX 6EDL7141 3-phase gate driver IC – delivers compact, precise, and reliable motor control. This enables improved performance, greater reliability, and longer flight times for UAVs.
“Our partnership with Reflex Drive is an important contribution to our market launch strategy and presence in India,” says Nenad Belancic, Global Application Manager Robotics and Drones at Infineon. “Our partner has proven its expertise with numerous customers who have obtained aviation certifications. In addition, the company has presented its innovative technologies enabled by Infineon systems at important international industry events.”
“Our collaboration with Infineon has led to significant advances in UAV electronics,” says Amrit Singh, Founder of Reflex Drive. “We believe drones have the potential to transform industries, from agriculture to logistics, and with Infineon’s devices, we can help drive this transformation at the forefront.”
Reflex Drives’s ESCs with field-oriented control (FOC) offer improved motor efficiency and precise control, while its high-performance BLDC motors are designed for optimized flight control and enable predictive maintenance of drive systems. Weighing only 180 g and with a compact volume of 120 cm³, the ESCs can deliver continuous power output of 3.8 kW (12S/48 V, 80 A continuous).
Due to their lightweight design, robust power output, and consistent FOC control – even under demanding weather conditions – make them ideal for motors in the thrust range from 15 to 20 kg. Therefore, they are particularly suitable for drone applications in the fields of agricultural spraying technology, seed dispersal, small-scale logistics, and goods transport.
Original – Infineon Technologies
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GaN / LATEST NEWS / PRODUCT & TECHNOLOGY / WBG3 Min Read
Infineon Technologies AG announced the first of a new family of radiation hardened Gallium Nitride (GaN) transistors, fabricated at Infineon’s own foundry, based on its proven CoolGan™ technology. Designed to operate in harsh space environments, the company’s new product is the first in-house manufactured GaN transistor to earn the highest quality certification of reliability assigned by the United States Defense Logistics Agency (DLA) to the Joint Army Navy Space (JANS) Specification MIL-PRF-19500/794.
The new radiation hardened GaN High Electron Mobility Transistor (HEMT) devices are engineered for mission-critical applications required in on-orbit space vehicles, manned space exploration, and deep space probes. Combining the robust performance of GaN HEMTs with Infineon 50+ years of experience in high reliability applications, the new power transistors deliver best-in-class efficiency, thermal management and power density for smaller, lighter, and more reliable space designs. The devices complement Infineon’s proven legacy radiation hardened silicon MOSFET portfolio, providing customers with access to a full catalog of power solutions for space applications.
“The Infineon team continues to push the limits of power design with our new GaN transistor line,” said Chris Opoczynski, Senior Vice President and General Manager HiRel, at Infineon. “This milestone brings the next-generation of high reliability power solutions for mission-critical defense and space applications that utilize the superior material properties of wide bandgap semiconductors to customers serving the growing aerospace market.”
The first three product variations in the new radiation hardened GaN transistor line are 100 V, 52 A devices featuring an industry leading (R DS(on) (drain source on resistance) of 4 mΩ (typical) and total gate charge (Qg) of 8.8 nC (typical). Encased in robust hermetically sealed ceramic surface mount packages, the transistors are Single Event Effect (SEE) hardened up to LET (GaN) = 70 MeV.cm2/mg (Au ion). Two devices, which are not JANS certified, are screened to a Total Ionizing Dose (TID) of 100 krad and 500 krad. The third device, screened to 500 krad TID, is qualified to the rigorous JANS Specification MIL-PRF-19500/794.
Infineon is the first company in the industry to achieve the DLA JANS certification for fully internally manufactured GaN power devices. DLA JANS certification requires rigorous levels of screening and Quality of Service Class Identifiers to ensure the performance, quality, and reliability required for space flight applications – making Infineon a leader in GaN for high reliability applications. Infineon is also running multiple lots prior to full JANS production release to ensure long term manufacturing reliability.
Engineering samples and evaluation boards are available immediately with the final JANS device being released in the summer of 2025. Additional JANS parts are launching soon, expanding available voltages and currents to enable customers greater flexibility in creating efficient and reliable designs. For more information, visit www.infineon.com/radhardgan
Original – Infineon Technologies
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LATEST NEWS / PROJECTS2 Min Read
Ather Energy, a leading electric two-wheeler manufacturer in India and Infineon Technologies Asia Pacific Pte Ltd, a global leader in semiconductor solutions, signed a Memorandum of Understanding (MoU) in Seoul, South Korea, to jointly drive innovation in the electric vehicle (EV) industry in India. The collaboration focuses on advancing semiconductor technologies to support light electric vehicles (LEVs), charging infrastructure, and safety, with a shared vision to contribute to India’s growing EV ecosystem.
The partnership aims to leverage cutting-edge semiconductor solutions from Infineon based on various technologies, microcontrollers and automotive related sensors, alongside Ather’s expertise in designing state-of-the-art LEVs (Light Electric Vehicles). Together, the companies will work towards enabling more efficient, reliable, and cost-effective EV solutions, driving the adoption of electric two-wheelers in India.
Speaking on the occasion, Swapnil Jain, Executive Director and CTO, Ather Energy, said: “At Ather, we’ve always believed that building great EVs starts with getting the fundamentals right – performance, efficiency, reliability. Our approach has always been grounded in first-principles thinking and deep engineering, questioning how every system can be made better, faster, and more efficient. That’s where semiconductor innovation becomes critical. Infineon’s leadership in semiconductors and system solutions brings deep expertise that aligns with our engineering-first approach. Our partnership with Infineon gives us access to advanced technologies that can help us improve key systems, from charging to safety and explore ways to reduce system complexity and cost. We’re looking forward to seeing how this collaboration can help us push the boundaries, not just for our products, but for the larger EV ecosystem in India.”
Highlighting the importance of this partnership, Peter Schaefer, Executive Vice President and Chief Sales Officer Automotive at Infineon, said: “India is one of the fastest-growing EV markets globally, and electric two-wheelers are at the heart of this transformation. We are thrilled to partner with Ather Energy to enable the next generation of sustainable mobility solutions. Our advanced SiC and GaN technologies will help drive energy-efficient and high-performance electric vehicles. This partnership will foster innovation that contributes meaningfully to India’s ambitious objective to reach a 30 percent sales share for EVs by 2030.”
This collaboration will explore sensing and safety innovations to elevate vehicle safety and user experience. These solutions deliver significant advantages in terms of energy efficiency, charging speed, and overall system reliability, making EVs more accessible, sustainable, convenient and appealing to consumers.
Original – Infineon Technologies
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LATEST NEWS2 Min Read
On the occasion of its 25th anniversary, Infineon Technologies AG is launching a globally integrated campaign to highlight the economic and societal significance of semiconductor technology and of the company as a driver of decarbonization and digitalization. The anniversary campaign’s central message is that the products and solutions made by Infineon are important to each and every one of us on a daily basis. The substantive core of the campaign is the emotional testimonial series “Matters to me”.
“Our IPO on 13 March 2000 was a courageous step on the way to becoming a leading global technology company. Today we can look back on an unbelievable story of growth,” says Andreas Urschitz, Chief Marketing Officer and Member of the Management Board. “Our innovative strength, our quality demands and the will to continuously develop the company are decisive factors in our success. Our products and solutions let us help shape the transition from fossil technologies to climate-neutral technologies and make a better future possible. This is another aspect we want our campaign to emphasize.”
“We want our communications work to fundamentally increase awareness and highlight the significance of our semiconductor technologies and of Infineon itself among the general public. Our corporate anniversary is of course an important occasion to do just that,” says Florian Martens, Chief Communications Officer. “Our campaign addresses our target groups around the world in an emotional manner. Involving the employees also strengthens the sense of identification with the company.”
As part of the central motto “Matters to me”, testimonials from customers, employees, end-users and others document the significance which semiconductors from Infineon have for them. This includes technical aspects, but also highly personal insights. Thus for example the manager of a French automobile component supplier shares what she finds important about working together with partners like Infineon to drive the decarbonization of the automotive industry forward.
While the “Matters to me” motto forms a global framework, the campaign also leaves room for topically oriented regional focus areas. Infineon is disseminating the campaign in its 360° brand strategy via all online and offline channels and is integrating the campaign in existing communications planning. Accordingly, previously planned event formats will be conducted as milestones in the anniversary campaign well into the fall. The campaign web page is available at https://www.infineon.com/25years.
Original – Infineon Technologies
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GaN / LATEST NEWS / SiC / WBG2 Min Read
Infineon Technologies AG and Visteon Corporation, a global leader in automotive cockpit electronics, announced the companies have signed a Memorandum of Understanding (MOU) to advance the development of next-generation electric vehicle powertrains.
In this joint effort, Infineon and Visteon will collaborate and integrate power conversion devices based on Infineon semiconductors, with particular emphasis on wideband gap device technologies, which provide significant advantages in power conversion applications compared to silicon-based semiconductors. These devices include greater power density, efficiency and thermal performance, which contribute to improved efficiency and reduced system costs for next-generation power conversion modules for the automotive sector.
Future Visteon EV powertrain applications incorporating Infineon CoolGaN™ (Gallium Nitride) and CoolSiC™ (Silicon Carbide) devices may include battery junction boxes, DC-DC converters and on-board chargers. The resulting powertrain systems will conform to the highest efficiency, robustness and reliability.
“Working with Infineon allows us to integrate cutting-edge semiconductor technologies that are essential in improving power conversion efficiency and overall system capability of next generation electric vehicles,” said Dr. Tao Wang, Head of the Electrification Product Line of Visteon Corporation. “This collaboration will advance technologies that accelerate the transition to a more sustainable and efficient mobility ecosystem.”
“Visteon is a recognized innovator and an early adopter of new technologies, making them an ideal partner for us,” said Peter Schaefer, Chief Sales Officer Automotive, Infineon Technologies AG. “Together, we will push the boundaries of electric vehicle technology and provide superior solutions to the global automotive industry.”
Original – Infineon Technologies
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Infineon Technologies AG published results for the second quarter of the 2025 fiscal year (period ended 31 March 2025).
- Q2 FY 2025: Revenue €3.591 billion, Segment Result €601 million, Segment Result Margin 16.7 percent
- Outlook for Q3 FY 2025: Based on an assumed exchange rate of US$1.125 to the euro, revenue is expected to reach €3.7 billion. On this basis, the Segment Result Margin is forecast to be in the mid-teens percentage range
- Outlook for FY 2025: Based on an assumed exchange rate of US$1.125 to the euro (previously 1.05), Infineon expects now revenue to slightly decline compared with the prior year. This includes a guesstimate of potential effects related to tariff disputes. The adjusted gross margin should be around 40 percent and the Segment Result Margin now in the mid-teens percentage range. Investments are reduced to around €2.3 billion. Adjusted Free Cash Flow (Free Cash Flow adjusted for investment in frontend buildings) should now be around €1.6 billion and reported Free Cash Flow unchanged at around €900 million
“Infineon has performed well in the second quarter. Even at a more unfavorable exchange rate of $1.125 to the euro, we would be right on track and in line with our previous expectations for the fiscal year. Given that order intake still shows no signs at all of slowing down, we can only guesstimate the effects of tariff disputes. We have therefore applied a haircut of 10 percent of expected revenue in the fourth quarter of the 2025 fiscal year. We are now anticipating a slight decline in revenue compared with the prior year,” says Jochen Hanebeck, CEO of Infineon.
For the full version of this news release (incl. financial data), please download the PDF version.
Original – Infineon Technologies