Infineon Technologies Tag Archive

  • Infineon Technologies will Power FOXESS Energy Storage Systems and String Inverters

    Infineon Technologies will Power FOXESS Energy Storage Systems and String Inverters

    3 Min Read

    Infineon Technologies AG supplies its power semiconductor devices to FOXESS, a fast-growing leader in the green energy industry and a manufacturer of inverters and energy storage systems. The two sides aim at promoting the development of green energy.

    Infineon will provide FOXESS with its CoolSiC™ MOSFETs 1200 V, which will be used with EiceDRIVER™ gate drivers for industrial energy storage applications. At the same time, FOXESS’ string PV inverters will use Infineon’s IGBT7 H7 1200 V power semiconductor devices.

    The global market for photovoltaic energy storage systems (PV-ES) has grown at a high speed in the last years. As competition in the PV-ES market accelerates, improving power density has become key to success, and how to improve efficiency and power density for energy storage applications has attracted much attention. Infineon’s CoolSiC MOSFET 1200 V and IGBT7 H7 1200 V series power semiconductor devices adopt the latest semiconductor technologies and design concepts that are tailored to industrial applications.

    Mr. Yu Daihui, Senior Vice President and Head of Industrial & Infrastructure of Infineon Technologies Greater China said, “As an industry leader in power semiconductors, we are proud to work closely with FOXESS. We will continue to drive decarbonization by enabling higher power density and more reliable systems for PV-ES applications.”

    Mr. Zhu Jingcheng, Chairman of FOXESS, said, “Thanks to the support of Infineon’s advanced components, FOXESS’ products have been significantly improved in terms of reliability and efficiency. This has been an important driving force for FOXESS’ growth. Infineon’s technical support and product quality have not only strengthened our competitiveness, but also expanded our presence in the market. We are confident about the future and look forward to further cooperation with Infineon to jointly promote the development of the industry and create greater value for our customers.”

    With a high power density, Infineon’s CoolSiC MOSFETs 1200 V can reduce losses by 50 percent and provide ~2 percent additional energy without increasing the battery size, which is especially beneficial for high-performance, lightweight, and compact energy storage solutions. FOXESS’ H3PRO 15 kW-30 kW energy storage series uses Infineon’s CoolSiC MOSFETs 1200 V for all models. Thanks to Infineon’s excellent performance, the H3PRO series has achieved an efficiency of up to 98.1 percent and excellent EMC performance; with superior performance and reliability, the H3PRO series has seen rapid sales growth in the global market.

    Infineon’s TRENCHSTOP IGBT7 H7 650 V / 1200 V series has lower losses and helps improve the overall efficiency and power density of inverters. In high-power inverter projects, high-current mold packaged discrete devices with current handling capability above 100 A can reduce the number of IGBTs in parallel and replace the IGBT module solution, further improving system reliability and reducing costs; in addition, the H7 series has become an industry benchmark for its high-quality performance and greater resistance to humidity.

    At present, FOXESS’ main industrial and commercial model, the R Series 75-110 kW, redefines the overall design of the 100 kW model by using IGBT7 H7 series discretes, and the efficiency of the whole machine can reach up to 98.6 percent. Thanks to the low power loss and high power density of the IGBT7 H7 series in discrete packages, technical problems such as current sharing in the paralleling process can be simplified and optimized.

    Every power device needs a driver, and the right driver can make the design a lot easier. Infineon offers more than 500 EiceDRIVER gate drivers with typical output currents of 0.1 A~18 A and comprehensive protection functions including fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault reporting, shutdown, and overcurrent protection, suitable for all power devices including CoolSiC and IGBTs.

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  • Chicony Power Technology Honors Infineon Technologies as its 2023 “GaN Strategic Partner of the Year”

    Chicony Power Technology Honors Infineon Technologies as its 2023 “GaN Strategic Partner of the Year”

    2 Min Read

    Chicony Power Technology, a worldwide leading manufacturer of power supplies and a pioneer in power electronics, has announced the winners of its Annual Partner Awards, honoring Infineon Technologies AG as its 2023 “GaN Strategic Partner of the Year”.

    Infineon has been recognized by Chicony Power as its top partner for gallium nitride (GaN)-based power supplies, including notebook adapters, as well as ICT applications in gaming, storage and servers. This acknowledgment is the result of Infineon’s high standards for product selection, application expertise, high reliability and cost-effectiveness. 

    GaN stands out as one of the most crucial technologies which are essential for improving the efficiency of power supplies and reducing their product size. Pooling Infineon’s leading GaN expertise and Chicony Power’s remarkable capabilities in power supply system design, the win-win collaboration has helped push the boundaries of innovation and further strengthened both companies’ leading positions in energy-efficient power solutions. As of today, the GaN adoption rate in Chicony Power’s high-watt adapters has reached 20 percent, and this rate is rapidly increasing.

    “Unrivalled R&D resources, a comprehensive application understanding and a large number of customer projects let Infineon continuously drive its roadmap for becoming a leading GaN Powerhouse,” said Adam White, Division President Power & Sensor Systems at Infineon Technologies. “The Strategic Partner of the Year award from Chicony Power is a great honor for us. We see this as part of our common mission to drive decarbonization and digitalization together.”

    “We’re pleased to honor Infineon, which has played a pivotal role in driving customer success throughout 2023, as our GaN Strategic Partner of the Year,” said Peter Tseng, President of Chicony Power Technology. “Our Vision is to be a global pioneer in the implementation of new technology that enhances power supply efficiency, reduces the carbon footprint of power supplies and helps create a greener world. We would like our Annual Partner Awards to encourage Infineon and all other partners to maintain the momentum in jointly promoting GaN technology in the market alongside Chicony Power, making the power industry greener and cleaner.” 

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  • Infineon Technologies Expands Leading Market Position in Automotive Semiconductors

    Infineon Technologies Expands Leading Market Position in Automotive Semiconductors

    3 Min Read

    Infineon Technologies AG continued to expand its leading market position in automotive semiconductors in 2023. According to the latest research by TechInsights, the global automotive semiconductor market grew by 16.5 percent in 2023, reaching a new record size of US$69.2 billion.

    Infineon’s overall market share increased by one percentage point, from nearly 13 percent in 2022 to about 14 percent in 2023, solidifying the company’s position as the global leader in the automotive semiconductor market. Infineon’s semiconductors are essential in serving all automotive key applications like driver assist and safety systems, powertrain and battery management, comfort, infotainment and security.

    According to TechInsights, Infineon has increased its market share in all regions and remained market leader in South Korea and China. In addition, Infineon has made significant gains in the Japanese automotive semiconductor market. Infineon has strengthened its strong European presence as the second-largest player, as well as its top three position in North America.

    “We are very proud that we have expanded our position as the leading automotive semiconductor supplier. This great success is based on our product innovation and system competence that add value to our customers’ solutions,” said Peter Schiefer, President of the Automotive Division at Infineon. “We also see this achievement as motivation, since our automotive semiconductors are the basis for the future of mobility, making cars clean, safe and smart.”

    “Infineon maintained the top spot in the TechInsights automotive semiconductor 2023 vendor market share rankings with nearly 14 percent market share,” said Asif Anwar, Executive Director of Automotive End Market Research at TechInsights. “The company’s automotive semiconductor revenues grew over 26 percent year-on-year, allowing the company to stretch its lead over its second and third place rivals by four percentage points.”

    A major driver of Infineon’s performance was strong automotive microcontroller (MCU) sales. For the first time, Infineon has reached the world’s number one position in this market. The company’s sales in the automotive microcontroller segment increased by nearly 44 percent compared to 2022, resulting in a 2023 market share of about 29 percent worldwide.

    Microcontrollers are key components in the automotive industry, controlling and monitoring a wide variety of systems in the automobile such as electric powertrain, electric-electronic (E/E) architecture, advanced driver assistance systems (ADAS) and automated driving, radar and chassis.

    Infineon’s AURIX™ flagship microcontroller family and the TRAVEO™ microcontroller family are the main contributors to this success, driving the transition in the automotive industry towards autonomous, connected and electrified vehicles. The families combine power and performance enhancements with the latest trends in the fields of virtualization, AI-based modeling, functional safety, cybersecurity and network functions. They are paving the way for new E/E architectures as well as the next generation of software-defined vehicles.

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  • Infineon Technologies Strengthens its Manufacturing Footprint through Partnership with Amkor Technology

    Infineon Technologies Strengthens its Manufacturing Footprint through Partnership with Amkor Technology

    2 Min Read

    Infineon Technologies AG is strengthening its outsourced backend manufacturing footprint in Europe and announced a multi-year partnership with Amkor Technology, Inc., a leading provider of semiconductor packaging and test services. Both companies have agreed on operating a dedicated packaging and test center at Amkor’s manufacturing site in Porto. Operations are expected to commence in the first half of 2025.

    With this long-term agreement, Infineon and Amkor further strengthen their partnership, extending the classical Outsourced Semiconductor Assembly and Test (OSAT) business model. Amkor will expand its facilities in Porto and run the production line, providing dedicated clean room space, and Infineon will provide an onsite team with engineering and development support.

    The cooperation further strengthens the European semiconductor supply chain and contributes to making it more resilient – especially for automotive customers. It complements Infineon’s already diversified manufacturing footprint, balancing inhouse and outsourced production capabilities.

    ”We are pleased to further deepen our partnership with Amkor and will contribute with our engineering and development expertise,” said Alexander Gorski, Executive Vice President and responsible for Infineon’s global Backend Operations.

    ”Infineon and Amkor are jointly increasing geographical resilience and supply security for our customers. Together, we are strengthening Europe’s importance as a location for semiconductor manufacturing. For 20 years, Infineon has been successfully operating a large service center in Porto, now with more than 600 employees. With the joint manufacturing center, we are becoming even more deeply rooted in Portugal’s excellent semiconductor ecosystem. We are looking forward to further increasing our footprint in Portugal.” 

    “Amkor is proud to expand our partnership with Infineon,” said Giel Rutten, Amkor’s president and chief executive officer. “We continue to invest in our Porto manufacturing site, expanding capacity as well as broadening our Advanced packaging and test technology portfolio. This collaboration represents another milestone for both companies in enhancing supply chain resiliency for advanced products supporting Automotive & Industrial end markets.”  

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  • Infineon Technologies and HD Korea Shipbuilding & Offshore Engineering to Jointly Develope Emerging Applications for Marine

    Infineon Technologies and HD Korea Shipbuilding & Offshore Engineering to Jointly Develop Emerging Applications for Marine

    2 Min Read

    Infineon Technologies AG and HD Korea Shipbuilding & Offshore Engineering Co. Ltd. (HD KSOE) have signed a non-binding Memorandum of Understanding (MoU) as a first step towards jointly developing emerging applications for the electrification of marine engines and machinery using energy-efficient power semiconductor technology.

    HD KSOE, a marine pioneer and global leader in ship building, is already focusing on creating eco-friendly decarbonized ship technology that uses electricity and hydrogen. The company will now cooperate with Infineon to create innovative power solutions for propulsion drive technology, a core element for ship electrification.

    Power semiconductors from Infineon drive the transformation towards clean, safe, and smart mobility services across all means of transportation. For modern maritime applications they are a key factor in guaranteeing a precise control of multiple power modules, such as large-capacity propulsion drives.

    Infineon will provide HD KSOE with technical assistance and mentoring in semiconductor power modules and system solutions, as well as share information on new semiconductor trends for marine applications. With the partnership HD KSOE aims to enhance reliability and performance of marine vessels’ propulsion drive technology contributing to environmental sustainability through the electrification of ships.

    Worldwide, maritime transport is responsible for almost 2.5 percent of total greenhouse gas emissions, according to the International Maritime Organization. It produces one billion tons of CO 2 each year. The transition to electric ships is imperative to mitigate the environmental impact of maritime transportation. 

    “We are pleased to sign an MoU with Infineon, which underpins our innovation efforts to become a leader in ship electrification technology,” said Chang Kwang-pil, Chief Technology Officer of HD KSOE. “Together, we will combine our strengths to create energy-efficient power solutions for CO2-friendly propulsion drives.”

    “At Infineon we are providing the technologies needed in today’s world of transportation to drive electrification that will shape the future of mobility,” said Dr. Peter Wawer, Division President Green Industrial Power at Infineon Technologies. “We are excited to work closely together with HD KSOE to develop clean, safe and smart mobility solutions. This way, we contribute to a more sustainable marine engine ecosystem and drive the decarbonization of shipping.”

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  • Infineon Introduced 80 V MOSFET OptiMOS™ 7

    Infineon Introduced 80 V MOSFET OptiMOS™ 7

    2 Min Read

    Infineon Technologies AG introduced the first product in its new advanced power MOSFET technology OptiMOS™ 7 80 V. The IAUCN08S7N013 features a significantly increased power density and is available in the versatile, robust, and high-current SSO8 5 x 6 mm² SMD package.

    The OptiMOS™ 7 80 V offering is a perfect match for the upcoming 48 V board net applications. It is designed specifically for the high performance, high quality and robustness needed for demanding automotive applications like automotive DC-DC converters in EVs, 48 V motor control, for instance electric power steering (EPS), 48 V battery switches and electric two- and three-wheelers.

    Compared to the previous generation, the R DS(on) of the Infineon IAUCN08S7N013 has been reduced by more than 50 percent, and is now the best R DS(on) in the industry with a maximum of 1.3 mΩ. Users benefit from minimized conduction losses, superior switching performance and the highest power density in a 5 x 6 mm² package.

    In addition, the IAUCN08S7N013 also features low package resistance and inductance, as well as a high avalanche current capability. For automotive applications, it has an extended qualification that goes beyond AEC-Q101.

    The IAUCN08S7N013 is in mass-production and available now. More information is available at www.infineon.com/iaucn08s7n013/.

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  • Infineon Technologies Announced SSO10T TSC Package with OptiMOS™ MOSFET Technology

    Infineon Technologies Announced SSO10T TSC Package with OptiMOS™ MOSFET Technology

    2 Min Read

    Infineon Technologies AG introduced the SSO10T TSC package with OptiMOS™ MOSFET technology. With its direct top-side cooling concept, the package offers excellent thermal performance. This eliminates heat transfer into or through the PCB of the automotive electronic control unit.

    The package enables a simple and compact double-sided PCB design and minimizes cooling requirements and system costs for future automotive power designs. The SSO10T TSC is therefore well suited for applications such as electric power steering (EPS), EMB, power distribution, brushless DC drives (BLDC), safety switches, reverse battery, and DCDC converters. 

    The SSO10T TSC has a 5 x 7 mm² footprint and is based on the established industry standard SSO8, a 5 x 6 mm² robust housing. However, due to its top-side cooling, the SSO10 TSC offers more than 20 percent and up to 50 percent higher performance than the standard SSO8 – depending on the thermal interface (TIM) material used and the TIM thickness. The SSO10T TSC package is JEDEC listed for open market and provides wide second source compatibility. As a result, the package can be introduced quickly and easily as the future standard for top-side cooling.

    The SSO10T package enables a very compact PCB design and reduces the system footprint. It also lowers the cost of the cooling design by eliminating vias, resulting in lower overall system costs and design effort. At the same time, the housing offers high power density and efficiency, thus supporting the development of future-proof and sustainable vehicles.

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  • Infineon Technologies to Demonstrate Innovative Semiconductors and Microcontrollers at embedded world 2024

    Infineon Technologies to Demonstrate Innovative Semiconductors and Microcontrollers at embedded world 2024

    5 Min Read

    Decarbonization and digitalization are the two central challenges of our time, but they rely on new and advanced technologies. At embedded world 2024 in Nuremberg, Infineon Technologies AG will demonstrate how its innovative semiconductor solutions support and drive these advancements.

    Microcontrollers in particular play an important role as they are at the heart of a wide range of applications, from electric vehicles and renewable energy systems to smart homes and industrial automation. For this reason, Infineon showcases high-quality microcontrollers designed with the latest technologies and innovative features such as enhanced security and high accuracy, offering excellent performance with low power consumption. 

    Under the motto “Driving decarbonization and digitalization. Together.” Infineon invites its customers to embedded world 2024 to demonstrate innovative semiconductor solutions that contribute to a more sustainable future. In addition, customers can register for Infineon’s digital platform – the perfect place to dive deeper into the various technologies presented at EW during and after the event. The Infineon booth in Hall 4A (booth #138) will present highlights from the consumer and IoT, automotive, and industrial sectors. 

    Consumer and IoT: With its broad portfolio of IoT solutions, Infineon supports manufacturers in providing consumers with more comfortable, secure, and energy-efficient homes and buildings by utilizing the company’s latest microcontroller, sensor, security, and connectivity solutions. In this area, visitors will discover:

    • Robotics development platform: The platform includes hardware and software solutions for key robotics subsystems such as main and motor controllers, battery management systems and sensors, which enable developers to get robots up and running faster and easier.
    • Better sleep quality with XENSIV™: Leveraging Infineon’s 60 GHz radar, PSoC™ and Wi-Fi® technologies, the XENSIV Sleep Quality Service is designed to measure and optimize the user’s sleep based on their individual needs.
    • Simplifying air quality monitoring and optimizing energy efficiency with the new XENSIV PAS CO2 5V kits: The XENSIV PAS CO2 5V Sensor2Go kit provides developers with seamless CO 2 sensor integration and a plug-and-play solution. The effortless connection to the graphical user interface (GUI) allows users to accurately analyze CO 2 data in real time from multiple kits.
    • Land a rocket on the Edge: This fun game demonstrates the PSoC Edge device’s ability to integrate multiple functions such as high-performance computing, graphics processing and display, acoustic activity recognition, speech recognition, sensing and gesture recognition with ML in the same chip and application.

    Automotive: As a leading supplier of automotive solutions, Infineon focuses on making smart cars a reality with proven microcontroller, connectivity, security, and sensor technologies for the industry. The company’s microelectronics play a critical role in delivering zero-emission vehicles that are smart, connected, safe and reliable.

    • AI-based siren recognition: Infineon showcases an autonomous car that recognizes emergency vehicles by their characteristic siren sound and reacts accordingly without violating traffic regulations. This system solution combines MEMS microphones, a microcontroller unit (MCU), and AI software from Imagimob.
    • Next generation eMobility: Infineon enables next-generation vehicles with the AURIX™ TC4x microcontroller family and the AURIX Development Studio (ADS). With these solutions, manufacturers can easily implement modern ADAS, advanced automotive E/E architectures and affordable Artificial Intelligence (AI) applications.
    • TRAVEO™ T2G Cluster 6M Lite Kit: With the TRAVEO T2G CYT4DL device prototypes can be implemented in the shortest possible time and at minimal cost.

    Industrial: Infineon supports smart factories and provides manufacturers with a broad sensor portfolio and an extensive partner network. In this way, the company enables reliable data acquisition and processing that enables condition monitoring and predictive maintenance in various Industry 4.0 use cases:

    • Predictive maintenance: In this sector, Infineon will present a portable HVAC system equipped with the XENSIV Predictive Maintenance Evaluation Kit. The demo includes a TinyML model and a cloud-based AI service solution generator.

    At the Infineon booth, the company has set up a comprehensive series of TechTalks. The seven presentations will cover a wide range of different topics, from software to products, and from consumers to industry. Full details of all Infineon conference presentations, technical workshops and TechTalks can be found here.

    Daily program of the Tech Talks

    • “Ambient sensing: Infineon radar solutions: How Infineon’s tools and enablement can accelerate your time to market” at 10:00 a.m. presented by Firas Labidi
    • “Embedded AI and safety – Embedded AI will enable the innovations for next generation of electric vehicle and autonomous driving” at 11:00 a.m. presented by Jürgen Schäfer
    • “Accelerate your product development with system reference designs” at 12:00 p.m. presented by Jaya Bindra
    • “Addressing the next generation of Edge AI devices with PSoC Edge” at 1:00 p.m. presented by Rebecca Phillips
    • “TRAVEO T2G MCUs for automotive HD front lighting” at 2:00 p.m. presented by Maniacherry Devassy Anu
    • “Unlocking the power of Edge AI with Imagimob and ModusToolbox™” at 3:00 p.m. presented by Alexander Samuelsson
    • “Infineon’s solutions for robotics” at 4:00 p.m. presented by Nenad Belancic

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  • Innoscience responds to Infineon's Lawsuit

    Innoscience Responds to Infineon’s Lawsuit

    2 Min Read

    Innoscience Technology firmly denounces the accusations made by Infineon Technologies Austria AG in a recent patent infringement lawsuit against three Innoscience entities. Infineon filed this lawsuit in a U.S. district court in California on March 13, 2024, and asserted a single U.S. patent.

    Innoscience denies Infineon’s allegations of patent infringement as well as the validity of the Infineon patent. Innoscience will vigorously defend itself and is confident that it will prevail. Infineon’s intention with this litigation is also in question, as it has asserted a patent that has significant defects. Particularly, even a cursory review of Infineon’s patent portfolio reveals that the alleged “invention” of the asserted patent was already disclosed in Infineon’s own earlier prior art patents, raising concerns that it may have committed fraud on the United States Patent and Trademark Office, for not making proper disclosures during the prosecution of the asserted defective patent.

    In addition, contrary to Infineon’s wrong characterization that the claims of the asserted defective patent “cover core aspects of GaN power semiconductors,” the lawsuit only concerns a small fraction of Innoscience’s packaged high-voltage (650V-700V) GaN transistors and does not affect the vast majority of its other products (including unpackaged transistors and wafers, low-voltage transistors, and certain packaged transistors).

    Therefore, the lawsuit should have little to no effect on Innoscience’s current ability to make, use, sell, offer to sell, or import into the United States its products for customers. Innoscience respects others’ valid IP rights and is also dedicated to developing its own IP portfolio. Despite being an eight-year old company, Innoscience has filed more than 800 patent applications globally. Innoscience’s R&D team boasts 500+ technical experts across the world.

    Through continuing innovation, Innoscience has produced GaN devices to power a diverse range of products, from power delivery chargers to data centers and smartphones, showcasing its ability to align with evolving application demands and adapt to diverse customer specifications.

    Moreover, Innoscience has always sought a cooperative and mutually beneficial approach to develop the global GaN industry, even among others in the same industry. Innoscience intends to prevail in this pending lawsuit and is determined to remain a trusted and reliable partner for its customers and contribute to their success by offering top-notch and versatile products and solutions based on Innoscience’s home-grown, superior technologies.

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  • Infineon Successfully Completed its Share Buyback Program 2024

    Infineon Successfully Completed its Share Buyback Program 2024

    1 Min Read

    On 18 March 2024, Infineon Technologies AG successfully completed its Share Buyback Program 2024, announced on 26 February 2024 in accordance with Article 5(1)(a) of Regulation (EU) No 596/2014 and Article 2(1) of Delegated Regulation (EU) No 2016/1052.

    As part of the Share Buyback Program 2024, a total of 7,000,000 shares (ISIN DE0006231004) were acquired. The total purchase price of the repurchased shares was € 232,872,668. The average purchase price paid per share was € 33.27.

    The buyback was carried out on behalf of Infineon by an independent credit institution via Xetra trading on the Frankfurt Stock Exchange, serving the sole purpose of allocating shares to employees of the company or affiliated companies, members of the Management Board of the company as well as members of the management board and the board of directors of affiliated companies as part of the existing employee participation programs.

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