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Infineon Technologies AG and United Microelectronics Corporation have signed a memorandum of understanding to strengthen collaboration on reducing emissions across their supply chains and advancing sustainability practices within the semiconductor industry.
Both companies have established measurable emissions reduction targets that were validated by the Science Based Targets Initiative in 2025 and align with the goal of limiting global warming to 1.5°C above pre-industrial levels. Through the agreement, Infineon and UMC plan to encourage their suppliers to adopt carbon reduction targets consistent with the SBTi framework.
The partnership will involve active engagement with shared suppliers to help them develop and implement decarbonization strategies. Planned activities include workshops focused on knowledge sharing, tools for emissions measurement, and the development of best practices for sustainability.
Infineon has committed to reducing its absolute scope 1 and scope 2 greenhouse gas emissions by 72.5% by 2030 compared with a 2019 baseline. These scopes cover emissions generated directly by the company’s operations. In addition, Infineon has set a scope 3 target addressing emissions across its supply chain, aiming for 72.5% of its suppliers, measured by emissions from purchased goods and services, capital goods, and upstream transportation and distribution, to establish science-based targets by 2029.
UMC was the first semiconductor foundry to obtain SBTi validation in 2022 and strengthened its commitments in 2025 to align with the initiative’s most ambitious standards. The company aims to reduce scope 1 and scope 2 emissions by 42% and scope 3 emissions by 25 percent by 2030 compared with a 2020 baseline, with a long-term goal of achieving net-zero greenhouse gas emissions by 2050.
Both companies emphasized that collaboration is critical because scope 3 emissions typically represent the largest share of total emissions within the semiconductor industry’s complex multi-tier supply chain. UMC has already engaged more than 400 suppliers through its Supply Chain Greenhouse Gas Inventory Initiative since 2022, while Infineon has worked with more than 100 suppliers since 2023 through its supplier engagement program to support the adoption of science-based targets.
Through the new partnership, Infineon and UMC plan to combine their experience and industry influence to accelerate sustainable practices and emissions reductions among their shared suppliers.
Original – Infineon Technologies
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Infineon Technologies AG has expanded its CoolGaN™ portfolio with the new CoolGaN Drive HB 600 V G5 product family. The four new devices – IGI60L1111B1M, IGI60L1414B1M, IGI60L2727B1M and IGI60L5050B1M – integrate two 600 V GaN switches in a half-bridge configuration along with high- and low-side gate drivers and a bootstrap diode in a single package.
By combining key power stage functions into one thermally optimized solution, the new family reduces external component count, simplifies PCB layout challenges typically associated with fast-switching GaN devices and helps shorten development cycles. Infineon said the integrated approach allows designers to realize GaN’s core advantages, including higher switching frequencies, lower switching and conduction losses and greater power density.
Johannes Schoiswohl, Head of the GaN Business Line at Infineon, said the new solutions combine high-speed GaN performance with enhanced integration and robustness, helping designers shrink systems and improve efficiency in compact power electronics.
The CoolGaN Drive HB 600 V G5 devices target low-power motor drives and switched-mode power supplies. The integrated half-bridge architecture enables smaller magnetics and passive components, improved efficiency across operating conditions and enhanced dynamic performance in space-constrained designs.
The devices are engineered for high-speed precision, offering a 98 ns propagation delay with minimal mismatch to support efficient high-frequency operation and predictable timing. For simplified integration, the products feature PWM inputs compatible with standard logic levels and operate from a single 12 V gate driver supply. Fast under-voltage lockout (UVLO) recovery supports reliable start-up and transient performance.
For thermal optimization, the devices are housed in a 6 mm × 8 mm TFLGA-27 package with exposed pads, enabling efficient heat spreading and supporting heatsink-less designs in many applications.
Infineon said the new CoolGaN Drive HB 600 V G5 family strengthens its position in the GaN market by combining proven CoolGaN device technology with system-level integration and deep power conversion expertise, enabling customers to more easily adopt and scale high-efficiency GaN-based designs across industrial and consumer platforms.
Original – Infineon Technologies
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Infineon Technologies AG shared its Management Board, with approval from the Supervisory Board, resolved on January 30, 2026 to repurchase up to 4 million shares (ISIN DE0006231004) via the stock exchange for a total purchase price of up to €200 million, excluding incidental costs.
The buyback will be executed on Infineon’s behalf by an independent credit institution through Xetra trading on the Frankfurt Stock Exchange. Infineon said the program is scheduled to start on February 23, 2026 and will be completed no later than March 27, 2026 (inclusive).
According to the company, the repurchased shares will be used solely to allocate shares to employees of Infineon or its affiliated companies, as well as members of Infineon’s Management Board and the management boards and boards of directors of affiliated companies, under existing employee participation programs.
The buyback is based on the authorization granted by Infineon’s Annual General Meeting on February 16, 2023. Infineon said the program will be carried out in line with Article 5 of Regulation (EU) No 596/2014 and Commission Delegated Regulation (EU) 2016/1052, which set out the conditions for buyback programs and stabilization measures. The company added that all transactions under the program will be announced in accordance with the applicable requirements and that it will provide regular progress updates on its website, keeping the information publicly available for at least five years from the date of announcement.
Original – Infineon Technologies
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Infineon Technologies AG said it plans to extend the contracts of Chief Executive Officer Jochen Hanebeck and Chief Financial Officer Dr. Sven Schneider ahead of schedule, signaling continuity in the company’s leadership and long-term strategic direction. Hanebeck’s contract is set to be extended through the end of March 2032, while Schneider’s term would run until the end of April 2032. Without the planned extensions, their contracts would have expired on April 1, 2027 and May 1, 2027, respectively. Infineon said the Supervisory Board is expected to pass the formal resolution in May.
“Infineon Technologies AG is in very capable hands, which is why we are establishing clarity about the company’s long term direction at an early stage,” said Dr. Herbert Diess, Chairman of Infineon’s Supervisory Board. He pointed to investments in technological strength and a continued focus on competitiveness, adding that Hanebeck, together with Schneider and the Management Board, has positioned the company for the future and will continue on a path of profitable growth.
Hanebeck said the company intends to capitalize on future opportunities in areas such as artificial intelligence, software-defined vehicles and humanoid robotics, emphasizing the importance of translating innovation into customer value at speed. He thanked the Supervisory Board for its support in maintaining the current course.
Schneider highlighted Infineon’s combination of financial stability and a strategy centered on profitable growth, noting that the approach has helped the company perform well even amid macroeconomic uncertainty. He said he looks forward to continuing to build sustainable value for Infineon and its shareholders alongside the broader team.
Original – Infineon Technologies
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The power electronics market is shifting rapidly as Gallium Nitride (GaN) gains wider adoption, and Infineon Technologies has released the 2026 edition of its annual GaN Insights report, outlining the state of GaN technology, emerging applications and the company’s latest product direction.
“GaN has become a market reality that has gained traction across various industries,” said Johannes Schoiswohl, Head of GaN Systems Business Line at Infineon. He added that Infineon’s product-to-system approach, manufacturing expertise and broad portfolio are intended to help customers navigate GaN adoption and capture its full potential.
Infineon points to strong market expansion expectations through 2030, driven by higher production volumes and broader penetration into new end markets. The company also expects 2026 to bring a wider set of design opportunities, including expanded use of GaN bidirectional switches (BDS) beyond solar inverters and EV on-board chargers. Infineon highlighted its high-voltage bidirectional GaN switch architecture based on a common-drain design with a double-gate structure using Gate Injection Transistor (GIT) technology, aimed at reducing die size versus conventional back-to-back approaches. In example system comparisons, Infineon notes that CoolGaN™ BDS operation up to 1 MHz can enable higher power output and lower system costs in solar microinverters.
The report also emphasizes GaN’s expansion into AI data centers, robotics, electric vehicles, renewable energy, and newer areas such as digital health and quantum computing. In data center power, Infineon describes GaN-enabled topologies as a path to higher efficiency and power density, supporting more compact architectures and lower losses. In robotics, the company highlights the potential for smaller motor drives with improved fine motion control.
Infineon positions its Integrated Device Manufacturing (IDM) strategy and 300-mm GaN manufacturing as key differentiators, alongside a portfolio spanning 40 V to 700 V across discrete and integrated solutions. The company cites recent platform examples including CoolGaN™ Transistor 650 V G5 devices, CoolGaN™ Transistor MV G5 parts with a monolithically integrated Schottky diode, and CoolGaN™ Automotive 100 V products aligned with AEC-Q101 requirements for the shift from 12 V to 48 V vehicle architectures.
Original – Infineon Technologies
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Infineon Technologies AG successfully placed €2 billion of corporate bonds under its European Medium Term Notes (EMTN) program. The issuance was several times oversubscribed and structured in three tranches with different maturities, supporting the company’s refinancing plans for fiscal year 2026.
Infineon said the proceeds will be used to refinance upcoming maturities in FY2026, refinance EUR bank loans assumed as part of the acquisition of Marvell’s Automotive Ethernet business, and help fund the planned acquisition of ams OSRAM’s non-optical analog/mixed-signal sensor portfolio.
“We are pleased with the successful transaction, which demonstrates the capital markets’ confidence in Infineon and our profitable growth trajectory. It is evidence of our conservative financial policy as it extends our maturity profile and thus further strengthens our financial resilience,” said Dr. Sven Schneider, Chief Financial Officer of Infineon.
The bond offering comprises three fixed-rate tranches:
- €750 million, 5-year maturity, 3.0% p.a. coupon
- €750 million, 8-year maturity, 3.5% p.a. coupon
- €500 million, 11-year maturity, 3.75% p.a. coupon
The notes were issued in partial debentures with a nominal value of €100,000 each and placed exclusively with qualified institutional investors. The bonds are rated BBB+ by S&P Global Ratings.
Original – Infineon Technologies
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Infineon Technologies announced that its CoolSiC™ MOSFETs have been adopted in Toyota’s new bZ4X model. The silicon carbide devices are integrated in the vehicle’s on-board charger (OBC) and DC/DC converter, leveraging SiC’s low-loss performance, high thermal capability and high-voltage strength to help extend driving range and reduce charging time.
“We are very proud that Toyota, one of the world’s largest automakers, has chosen Infineon’s CoolSiC technology. Silicon carbide enhances the range, efficiency and performance of electric vehicles and is therefore a very important part of the future of mobility,” said Peter Schaefer, Executive Vice President and Chief Sales Officer Automotive at Infineon. He added that Infineon’s focus on innovation and zero-defect quality supports rising demand for power electronics in electromobility.
Infineon noted that CoolSiC MOSFETs use a trench gate structure that reduces normalized on-resistance and chip size, lowering both conduction and switching losses to improve overall efficiency in automotive power systems. Optimized parasitic capacitance and gate threshold voltage also enable unipolar gate drive, which can simplify drive circuitry in the electric drivetrain while supporting high-density, high-reliability OBC and DC/DC converter designs.
Original – Infineon Technologies
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Infineon Technologies AG introduced the EiceDRIVER™ 1ED301xMC12I family, a series of high-performance isolated gate driver ICs featuring an opto-emulator input. The devices are pin-compatible with existing opto-emulators and optocouplers and are designed to deliver higher common-mode transient immunity (CMTI), a robust output stage, and more accurate timing than typical opto-based solutions. This allows engineers to migrate to SiC technology while keeping established opto-based control schemes and avoiding a redesign.
The 1ED301xMC12I portfolio includes three variants—1ED3010, 1ED3011 and 1ED3012—covering Si MOSFET, IGBT and SiC MOSFET use cases. Each device provides up to 6.5 A output current, supporting power modules and parallel switch configurations. The ICs are offered in a CTI 600 6-pin DSO package with more than 8 mm creepage and clearance. Insulation is certified to UL 1577 and is pending certification to IEC 60747-17.
For switching precision and robustness, the opto-emulator interface uses a two-pin input designed for high noise immunity. The family specifies CMTI greater than 300 kV/µs, a propagation delay of 40 ns, and timing matching below 10 ns to support consistent high-speed switching behavior. A pure PMOS sourcing stage is included to improve turn-on performance.
The 1ED3010MC12I, 1ED3011MC12I and 1ED3012MC12I are available now through Infineon and its distribution partners. Infineon also offers the EVAL-1ED3012MC12I-SIC evaluation board to simplify testing with Infineon switches.
Original – Infineon Technologies
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Infineon Technologies AG reported Q1 FY2026 revenue of €3.662 billion, a segment result of €655 million, and a segment result margin of 17.9%. Management cited strong AI-driven demand for power supply solutions against an otherwise subdued market backdrop.
Outlook for Q2 FY2026: assuming EUR/USD of 1.15, revenue is expected to be around €3.8 billion with a segment result margin in the mid-to-high-teens % range.
Full-year FY2026 outlook: based on EUR/USD of 1.15, revenue is still expected to rise moderately year on year. The adjusted gross margin is guided to the low-40s % range and the segment result margin to the high-teens % range. Infineon lifted planned investments to around €2.7 billion (previously €2.2 billion) to accelerate manufacturing capacity for AI data center power supplies. The company now targets around €2.5 billion of revenue from this area in FY2027, after about €1.5 billion in the current fiscal year. Adjusted free cash flow is now expected to be around €1.4 billion (previously €1.6 billion), and free cash flow around €1.0 billion (previously €1.1 billion).
“Infineon has made a successful start to fiscal year 2026,” said Jochen Hanebeck, CEO of Infineon. “The very dynamic demand for AI is providing strong tailwinds. To serve customers best, we are aligning capacity to rising demand and bringing forward investments, with a significant portion accelerating the ramp of our Smart Power Fab in Dresden, which opens this summer.”
Original – Infineon Technologies
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Infineon Technologies AG has completed the sale of its backend manufacturing site in Bangkok/Nonthaburi, Thailand, to Malaysian Pacific Industries Berhad (MPI), a long-standing and trusted supplier. As part of the transaction, Infineon has entered into a long-term supply agreement with MPI.
MPI, headquartered in Malaysia, provides outsourced semiconductor assembly, packaging and testing services through its Carsem subsidiaries and has served global customers for more than 50 years. MPI will assume operations along with all production-related employees, offering an excellent long-term outlook for the workforce.
Infineon reiterated its commitment to Thailand’s vibrant semiconductor ecosystem and partner network. In January 2025, the company launched construction of a new backend fab in Samut Prakan, south of Bangkok. Together, the divestiture and the new investment optimize Infineon’s manufacturing footprint, aligning with its strategy to combine in-house production with reliable OSAT partnerships for greater efficiency and flexibility.
Original – Infineon Technologies
