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Reflex Drive, a deep tech startup from India has selected power devices from Infineon Technologies AG for its next-generation motor control solutions for unmanned aerial vehicles (UAVs). By integrating Infineon’s OptiMOS™ 80 V and 100 V , Reflex Drive’s electric speed controllers (ESCs) achieve improved thermal management and higher efficiency, enabling high power density in a compact footprint.
Additionally, the use of Infineon’s MOTIX™ IMD701 controller solution – which combines the XMC1404 microcontroller with the MOTIX 6EDL7141 3-phase gate driver IC – delivers compact, precise, and reliable motor control. This enables improved performance, greater reliability, and longer flight times for UAVs.
“Our partnership with Reflex Drive is an important contribution to our market launch strategy and presence in India,” says Nenad Belancic, Global Application Manager Robotics and Drones at Infineon. “Our partner has proven its expertise with numerous customers who have obtained aviation certifications. In addition, the company has presented its innovative technologies enabled by Infineon systems at important international industry events.”
“Our collaboration with Infineon has led to significant advances in UAV electronics,” says Amrit Singh, Founder of Reflex Drive. “We believe drones have the potential to transform industries, from agriculture to logistics, and with Infineon’s devices, we can help drive this transformation at the forefront.”
Reflex Drives’s ESCs with field-oriented control (FOC) offer improved motor efficiency and precise control, while its high-performance BLDC motors are designed for optimized flight control and enable predictive maintenance of drive systems. Weighing only 180 g and with a compact volume of 120 cm³, the ESCs can deliver continuous power output of 3.8 kW (12S/48 V, 80 A continuous).
Due to their lightweight design, robust power output, and consistent FOC control – even under demanding weather conditions – make them ideal for motors in the thrust range from 15 to 20 kg. Therefore, they are particularly suitable for drone applications in the fields of agricultural spraying technology, seed dispersal, small-scale logistics, and goods transport.
Original – Infineon Technologies
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Infineon Technologies AG announced the first of a new family of radiation hardened Gallium Nitride (GaN) transistors, fabricated at Infineon’s own foundry, based on its proven CoolGan™ technology. Designed to operate in harsh space environments, the company’s new product is the first in-house manufactured GaN transistor to earn the highest quality certification of reliability assigned by the United States Defense Logistics Agency (DLA) to the Joint Army Navy Space (JANS) Specification MIL-PRF-19500/794.
The new radiation hardened GaN High Electron Mobility Transistor (HEMT) devices are engineered for mission-critical applications required in on-orbit space vehicles, manned space exploration, and deep space probes. Combining the robust performance of GaN HEMTs with Infineon 50+ years of experience in high reliability applications, the new power transistors deliver best-in-class efficiency, thermal management and power density for smaller, lighter, and more reliable space designs. The devices complement Infineon’s proven legacy radiation hardened silicon MOSFET portfolio, providing customers with access to a full catalog of power solutions for space applications.
“The Infineon team continues to push the limits of power design with our new GaN transistor line,” said Chris Opoczynski, Senior Vice President and General Manager HiRel, at Infineon. “This milestone brings the next-generation of high reliability power solutions for mission-critical defense and space applications that utilize the superior material properties of wide bandgap semiconductors to customers serving the growing aerospace market.”
The first three product variations in the new radiation hardened GaN transistor line are 100 V, 52 A devices featuring an industry leading (R DS(on) (drain source on resistance) of 4 mΩ (typical) and total gate charge (Qg) of 8.8 nC (typical). Encased in robust hermetically sealed ceramic surface mount packages, the transistors are Single Event Effect (SEE) hardened up to LET (GaN) = 70 MeV.cm2/mg (Au ion). Two devices, which are not JANS certified, are screened to a Total Ionizing Dose (TID) of 100 krad and 500 krad. The third device, screened to 500 krad TID, is qualified to the rigorous JANS Specification MIL-PRF-19500/794.
Infineon is the first company in the industry to achieve the DLA JANS certification for fully internally manufactured GaN power devices. DLA JANS certification requires rigorous levels of screening and Quality of Service Class Identifiers to ensure the performance, quality, and reliability required for space flight applications – making Infineon a leader in GaN for high reliability applications. Infineon is also running multiple lots prior to full JANS production release to ensure long term manufacturing reliability.
Engineering samples and evaluation boards are available immediately with the final JANS device being released in the summer of 2025. Additional JANS parts are launching soon, expanding available voltages and currents to enable customers greater flexibility in creating efficient and reliable designs. For more information, visit www.infineon.com/radhardgan
Original – Infineon Technologies
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Ather Energy, a leading electric two-wheeler manufacturer in India and Infineon Technologies Asia Pacific Pte Ltd, a global leader in semiconductor solutions, signed a Memorandum of Understanding (MoU) in Seoul, South Korea, to jointly drive innovation in the electric vehicle (EV) industry in India. The collaboration focuses on advancing semiconductor technologies to support light electric vehicles (LEVs), charging infrastructure, and safety, with a shared vision to contribute to India’s growing EV ecosystem.
The partnership aims to leverage cutting-edge semiconductor solutions from Infineon based on various technologies, microcontrollers and automotive related sensors, alongside Ather’s expertise in designing state-of-the-art LEVs (Light Electric Vehicles). Together, the companies will work towards enabling more efficient, reliable, and cost-effective EV solutions, driving the adoption of electric two-wheelers in India.
Speaking on the occasion, Swapnil Jain, Executive Director and CTO, Ather Energy, said: “At Ather, we’ve always believed that building great EVs starts with getting the fundamentals right – performance, efficiency, reliability. Our approach has always been grounded in first-principles thinking and deep engineering, questioning how every system can be made better, faster, and more efficient. That’s where semiconductor innovation becomes critical. Infineon’s leadership in semiconductors and system solutions brings deep expertise that aligns with our engineering-first approach. Our partnership with Infineon gives us access to advanced technologies that can help us improve key systems, from charging to safety and explore ways to reduce system complexity and cost. We’re looking forward to seeing how this collaboration can help us push the boundaries, not just for our products, but for the larger EV ecosystem in India.”
Highlighting the importance of this partnership, Peter Schaefer, Executive Vice President and Chief Sales Officer Automotive at Infineon, said: “India is one of the fastest-growing EV markets globally, and electric two-wheelers are at the heart of this transformation. We are thrilled to partner with Ather Energy to enable the next generation of sustainable mobility solutions. Our advanced SiC and GaN technologies will help drive energy-efficient and high-performance electric vehicles. This partnership will foster innovation that contributes meaningfully to India’s ambitious objective to reach a 30 percent sales share for EVs by 2030.”
This collaboration will explore sensing and safety innovations to elevate vehicle safety and user experience. These solutions deliver significant advantages in terms of energy efficiency, charging speed, and overall system reliability, making EVs more accessible, sustainable, convenient and appealing to consumers.
Original – Infineon Technologies
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Infineon Technologies AG is revolutionizing the power delivery architecture required for future AI data centers. In collaboration with NVIDIA, Infineon is developing the next generation of power systems based on a new architecture with central power generation of 800 V high-voltage direct current (HVDC).
The new system architecture significantly increases energy-efficient power distribution across the data center and allows power conversion directly at the AI chip (Graphic Processing Unit, GPU) within the server board. Infineon’s expertise in power conversion solutions from grid to core based on all relevant semiconductor materials silicon (Si), silicon carbide (SiC) and gallium nitride (GaN) is accelerating the roadmap to a full scale HVDC architecture.
This revolutionary step paves the way for the implementation of advanced power delivery architectures in accelerated computing data centers and will further enhance reliability and efficiency. As AI data centers already are going beyond 100,000 individual GPUs, the need for more efficient power delivery is becoming increasingly important. AI data centers will require power outputs of one megawatt (MW) and more per IT rack before the end of the decade. Therefore, the HVDC architecture coupled with high-density multiphase solutions will set a new standard for the industry, driving the development of high-quality components and power distribution systems.
“Infineon is driving innovation in artificial intelligence,” said Adam White, Division President Power & Sensor Systems at Infineon. “The combination of Infineon’s application and system know-how in powering AI from grid to core, combined with NVIDIA’s world-leading expertise in accelerated computing, paves the way for a new standard for power architecture in AI data centers to enable faster, more efficient and scalable AI infrastructure.”
“The new 800V HVDC system architecture delivers high reliability, energy-efficient power distribution across the data center,” said Gabriele Gorla, vice president of system engineering at NVIDIA. “Through this innovative approach, NVIDIA is able to optimize the energy consumption of our advanced AI infrastructure, which supports our commitment to sustainability while also delivering the performance and scalability required for the next generation of AI workloads.”
At present, the power supply in AI data centers is decentralized. This means that the AI chips are supplied with power by a large number of power supply units (PSU). The future system architecture will be centralized, making the best possible use of the constraint space in a server rack. This will increase the importance of leading-edge power semiconductor solutions using fewest power conversion stages and allowing upgrades to even higher distribution voltages.
Infineon is a leader in power semiconductor solutions and systems integration. The company expects the proportion of power semiconductors in a centralized HVDC architecture to be similar or higher than in today’s AC distribution architecture. Additionally, to the scaling of the HVDC power architecture, Infineon continues to support state of the art DCDC multiphase solutions and intermediate architectures for hyperscalers and AI data center operators with a broad product portfolio based on all relevant semiconductor materials along the entire power flow.
Learn more about Infineon’s AI power and data center solutions here.
Original – Infineon Technologies
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Infineon Technologies AG will supply Rivian’s R2 platform with power modules for traction inverters. The R2 platform will use silicon carbide (SiC) and silicon (Si) modules from Infineon’s HybridPACK™ Drive G2 family. Supply is expected to start in 2026. Additionally, Infineon will supply other products for the platform, including AURIX™ TC3x microcontrollers and power management ICs.
“We are committed to enhancing the performance and range of electric vehicles jointly with innovative automotive companies like Rivian,” said Stefan Obersriebnig, head of the product line for high voltage modules in Infineon’s Automotive Division. “Our dedication for innovation and zero-defect quality has made us the preferred partner of the automotive industry. With our broad product portfolio, system expertise and manufacturing capabilities, we are a key enabler of emission-free, sustainable mobility.”
HybridPACK Drive is Infineon’s market-leading power module family for electric vehicles. With more than 10.5 million units sold since 2017, it contributes significantly to the transition to electromobility. This transition will lead to strong market growth for power semiconductors, especially those based on wide bandgap materials like SiC.
With the expansion of its Kulim fab, Infineon is building the world’s most competitive 200-millimeter SiC power fab and further strengthens its market-leading role as a high-quality, high-volume supplier to the automotive industry. As “Infineon One Virtual Fab” for highly innovative wide bandgap (WBG) technologies, Infineon’s production sites in Kulim and Villach share technologies and processes. This allows for fast ramping and smooth and highly efficient operations in SiC and gallium nitride (GaN) manufacturing and reinforces Infineon’s technological leadership across the spectrum of all power semiconductor materials, in silicon as well as SiC and GaN.
Original – Infineon Technologies
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On the occasion of its 25th anniversary, Infineon Technologies AG is launching a globally integrated campaign to highlight the economic and societal significance of semiconductor technology and of the company as a driver of decarbonization and digitalization. The anniversary campaign’s central message is that the products and solutions made by Infineon are important to each and every one of us on a daily basis. The substantive core of the campaign is the emotional testimonial series “Matters to me”.
“Our IPO on 13 March 2000 was a courageous step on the way to becoming a leading global technology company. Today we can look back on an unbelievable story of growth,” says Andreas Urschitz, Chief Marketing Officer and Member of the Management Board. “Our innovative strength, our quality demands and the will to continuously develop the company are decisive factors in our success. Our products and solutions let us help shape the transition from fossil technologies to climate-neutral technologies and make a better future possible. This is another aspect we want our campaign to emphasize.”
“We want our communications work to fundamentally increase awareness and highlight the significance of our semiconductor technologies and of Infineon itself among the general public. Our corporate anniversary is of course an important occasion to do just that,” says Florian Martens, Chief Communications Officer. “Our campaign addresses our target groups around the world in an emotional manner. Involving the employees also strengthens the sense of identification with the company.”
As part of the central motto “Matters to me”, testimonials from customers, employees, end-users and others document the significance which semiconductors from Infineon have for them. This includes technical aspects, but also highly personal insights. Thus for example the manager of a French automobile component supplier shares what she finds important about working together with partners like Infineon to drive the decarbonization of the automotive industry forward.
While the “Matters to me” motto forms a global framework, the campaign also leaves room for topically oriented regional focus areas. Infineon is disseminating the campaign in its 360° brand strategy via all online and offline channels and is integrating the campaign in existing communications planning. Accordingly, previously planned event formats will be conducted as milestones in the anniversary campaign well into the fall. The campaign web page is available at https://www.infineon.com/25years.
Original – Infineon Technologies
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Infineon Technologies AG has introduced the CoolGaN™ bidirectional switch (BDS) 650 V G5, a gallium nitride (GaN) switch capable of actively blocking voltage and current in both directions. Featuring a common-drain design and a double-gate structure, it leverages Infineon’s robust gate injection transistor (GIT) technology to deliver a monolithic bidirectional switch, enabled by Infineon’s CoolGaN technology. The device serves as a highly efficient replacement for traditional back-to-back configurations commonly used in converters.
The bidirectional CoolGaN switch offers several key advantages for power conversion systems. By integrating two switches in a single device, it simplifies the design of cycloconverter topologies, enabling single-stage power conversion, eliminating the need for multiple conversion stages. This leads to improved efficiency, increased reliability, and a more compact design. BDS-based microinverters also benefit from higher power density and reduced component count, which simplifies manufacturing and reduces costs. Additionally, the device supports advanced grid functions such as reactive power compensation and bidirectional operation.
As a result, this solution holds significant potential across a wide range of applications, including:
Microinverters: The CoolGaN bidirectional switch enables simpler and more efficient microinverter designs, reducing both size and cost. This makes microinverters more attractive for residential and commercial solar installations.
Energy Storage Systems (ESS): In ESS applications such as battery chargers and dischargers, the switch allows for more efficient and reliable energy storage and release.
Electric Vehicle (EV) Charging: In EV charging systems, the BDS switch supports faster, more efficient charging while also enabling vehicle-to-grid (V2G) functionality, where energy stored in the vehicle battery can be fed back into the grid.
Motor control: The CoolGaN BDS is ideal for use in Current Source Inverters (CSI) for industrial motor drives. Compared to traditional Voltage Source Inverters (VSI), CSIs offer benefits such as:
- Producing a sinusoidal output voltage, which supports longer cable runs, reduced losses, and improved fault tolerance.
- Replacing the DC-link capacitor with an inductor, improving high-temperature performance and short-circuit protection.
- Higher efficiency at partial loads, lower EMI, inherent buck-boost capability for voltage variation, and scalability for parallel operation.
These features make CSIs a more robust and efficient alternative for industrial motor applications.
AI data centers: In AI server power supplies, bidirectional switches like CoolGaN support higher switching frequencies and power density in architectures such as Vienna rectifiers and H4 PFCs. A single CoolGaN BDS can replace two conventional switches, reducing component count, cost, size, and overall power losses.
The CoolGaN bidirectional switch (BDS) 650 V G5 is available for ordering now as well as samples of the 110 mΩ product. More information is available here.
Original – Infineon Technologies
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To enable the next generation of solid-state power distribution systems, Infineon Technologies AG is expanding its silicon carbide (SiC) portfolio with the new CoolSiC™ JFET product family. The new devices deliver minimized conduction losses, solid turn-off capability, and high robustness, making them ideal for advanced solid-state protection and distribution.
With robust short-circuit capability, thermal stability in linear mode, and precise overvoltage control, CoolSiC JFETs enable reliable and efficient system performance in a wide range of industrial and automotive applications, including solid-state circuit breakers (SSCBs), AI data center hot-swaps, eFuses, motor soft starters, industrial safety relays, and automotive battery disconnect switches.
“With CoolSiC JFET, we are addressing the growing demand for smarter, faster, and more robust power distribution systems,” says Dr. Peter Wawer, Division President Green Industrial Power at Infineon Technologies. “This application-driven power semiconductor technology is specifically designed to provide our customers with the tools they need to solve the complex challenges in this rapidly evolving space. We are proud to introduce devices that achieve best-in-class R DS(ON), setting a new standard for SiC performance and reaffirming Infineon’s leadership in the field of wide-bandgap technology.”
The first generation of CoolSiC JFETs features ultra-low R DS(ON) starting at 1.5 mΩ (750 V BDss) and 2.3 mΩ (1200 V BDss), significantly reducing conduction losses. The bulk-channel optimized SiC JFET offers high robustness under short-circuit and avalanche failure conditions. Housed in a Q-DPAK top-side cooled package, the devices support easy paralleling and scalable current handling, enabling compact, high-power systems with flexible layout and integration options. Their predictable switching behavior under thermal stress, overload and fault conditions provides maximum long-term reliability in continuous operation.
To meet the thermal and mechanical challenges of harsh application environments, CoolSiC JFETs leverage Infineon’s advanced .XT interconnection technology with diffusion soldering. This significantly improves transient thermal impedance and robustness under pulsed and cyclic loads typical of industrial power systems. Tested and qualified under real-world operating conditions of solid-state power switches and based on the industry-standard Q-DPAK package, the devices enable quick and seamless design integration in both industrial and automotive applications.
Engineering samples of the new CoolSiC JFET family will be available later in 2025, with volume production starting in 2026. The product portfolio will be further expanded with a variety of packages and modules. The product family has been successfully demonstrated at the Infineon booth at PCIM Europe 2025 in Nuremberg. More information is available at www.infineon.com/jfet.
Original – Infineon Technologies
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Infineon Technologies AG and Visteon Corporation, a global leader in automotive cockpit electronics, announced the companies have signed a Memorandum of Understanding (MOU) to advance the development of next-generation electric vehicle powertrains.
In this joint effort, Infineon and Visteon will collaborate and integrate power conversion devices based on Infineon semiconductors, with particular emphasis on wideband gap device technologies, which provide significant advantages in power conversion applications compared to silicon-based semiconductors. These devices include greater power density, efficiency and thermal performance, which contribute to improved efficiency and reduced system costs for next-generation power conversion modules for the automotive sector.
Future Visteon EV powertrain applications incorporating Infineon CoolGaN™ (Gallium Nitride) and CoolSiC™ (Silicon Carbide) devices may include battery junction boxes, DC-DC converters and on-board chargers. The resulting powertrain systems will conform to the highest efficiency, robustness and reliability.
“Working with Infineon allows us to integrate cutting-edge semiconductor technologies that are essential in improving power conversion efficiency and overall system capability of next generation electric vehicles,” said Dr. Tao Wang, Head of the Electrification Product Line of Visteon Corporation. “This collaboration will advance technologies that accelerate the transition to a more sustainable and efficient mobility ecosystem.”
“Visteon is a recognized innovator and an early adopter of new technologies, making them an ideal partner for us,” said Peter Schaefer, Chief Sales Officer Automotive, Infineon Technologies AG. “Together, we will push the boundaries of electric vehicle technology and provide superior solutions to the global automotive industry.”
Original – Infineon Technologies
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Infineon Technologies AG published results for the second quarter of the 2025 fiscal year (period ended 31 March 2025).
- Q2 FY 2025: Revenue €3.591 billion, Segment Result €601 million, Segment Result Margin 16.7 percent
- Outlook for Q3 FY 2025: Based on an assumed exchange rate of US$1.125 to the euro, revenue is expected to reach €3.7 billion. On this basis, the Segment Result Margin is forecast to be in the mid-teens percentage range
- Outlook for FY 2025: Based on an assumed exchange rate of US$1.125 to the euro (previously 1.05), Infineon expects now revenue to slightly decline compared with the prior year. This includes a guesstimate of potential effects related to tariff disputes. The adjusted gross margin should be around 40 percent and the Segment Result Margin now in the mid-teens percentage range. Investments are reduced to around €2.3 billion. Adjusted Free Cash Flow (Free Cash Flow adjusted for investment in frontend buildings) should now be around €1.6 billion and reported Free Cash Flow unchanged at around €900 million
“Infineon has performed well in the second quarter. Even at a more unfavorable exchange rate of $1.125 to the euro, we would be right on track and in line with our previous expectations for the fiscal year. Given that order intake still shows no signs at all of slowing down, we can only guesstimate the effects of tariff disputes. We have therefore applied a haircut of 10 percent of expected revenue in the fourth quarter of the 2025 fiscal year. We are now anticipating a slight decline in revenue compared with the prior year,” says Jochen Hanebeck, CEO of Infineon.
For the full version of this news release (incl. financial data), please download the PDF version.
Original – Infineon Technologies
