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LATEST NEWS / PRODUCT & TECHNOLOGY / SiC / TOP STORIES / WBG2 Min Read
Bourns, Inc. has expanded its 650 and 1200 V Silicon Carbide (SiC) Schottky Barrier Diode (SBD) product family with 10 new models. The 10 new models added to the Bourns® SiC SBD line are designed to address the increasing power density requirements in the latest transportation, renewable energy and industrial systems.
Bourns’ expanded wide band gap diode line delivers the peak forward surge, low forward drop, reduced thermal resistance and low power loss capabilities demanded by today’s high frequency and high current applications. These capabilities also help designers develop smaller, cost-efficient and state-of-the-art power electronics.
As optimal power conversion solutions for DC-DC and AC-DC converters, Switched-Mode Power Supplies (SMPS), photovoltaic inverters, motor drives and other rectification applications, the 10 new models feature currents in the 5-10 A range, with no reverse recovery current to reduce EMI.
This enables them to significantly lower energy losses and further increase efficiency, switching performance and reliability. In addition to providing excellent thermal performance, Bourns’ new SiC SBD models are available in multiple forward voltage, current and package options that include TO220-2, TO247-3, TO252, TO263 and TO247-2.
The 10 new Bourns® BSD SiC SBD models are available now. These models are RoHS compliant, halogen free, Pb free and their epoxy potting compound is flame retardant to the UL 94V-0 standard. For more detailed product information, please see: www.bourns.com/products/diodes/silicon-carbide-sic-schottky-barrier-diodes.
Original – Bourns
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LATEST NEWS / PRODUCT & TECHNOLOGY / SiC / TOP STORIES / WBG2 Min Read
Bourns, Inc. announced its first 650 V – 1200 V Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs). The Bourns® SiC SBD line consists of six models engineered to provide excellent current carrying and thermal capabilities and high power density for increased performance and reliability. These capabilities make Bourns® SiC SBDs optimal high efficiency power conversion solutions for the growing variety of high frequency applications that need to meet reduced size and lower system cost requirements.
Telecom/Server Switched-Mode Power Supplies (SMPS), photovoltaic inverters, PC power and motor drives are a few of the applications that can benefit from the features provided in the Bourns® BSD Series SiC SBDs.
To address ongoing design demands for ever higher power efficiency, Bourns® SiC SBDs feature low forward voltage (VF) and high thermal conductivity, which increases efficiency while lowering power dissipation, satisfying application requirements of 650 V and 1200 V solutions.
The series also has no reverse recovery current to reduce EMI, enabling these SiC SBDs to significantly lower energy losses. In addition to offering 650 V to 1200 V operation with currents in the 6-10 A range, the six new BSD models of wide band gap diodes from Bourns offer designers various forward voltage, current and package options including TO220-2, TO247-3, TO252, and DFN8x8.
The six Bourns® Model BSD SiC SBDs are available now. These models are RoHS compliant, halogen free, Pb free and their epoxy potting compound is flame retardant to the UL 94V-0 standard.
For more detailed product information, please see: www.bourns.com/products/diodes/silicon-carbide-sic-schottky-barrier-diodes
Original – Bourns