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Wolfspeed has filed a patent infringement lawsuit against Navitas Semiconductor in the U.S. District Court for the District of Delaware, alleging that numerous GaN and SiC products infringe multiple Wolfspeed patents. The legal action underscores Wolfspeed’s strategy to protect its wide-bandgap semiconductor intellectual property as competition intensifies across the power electronics market.
According to the lawsuit, Wolfspeed alleges that several major Navitas product families infringe five U.S. patents:
- U.S. Patent No. 8,169,005
- U.S. Patent No. 10,998,418
- U.S. Patent No. 10,886,396
- U.S. Patent No. 10,749,443
- U.S. Patent No. 11,888,392
The complaint identifies a broad range of Navitas products, including:
- GaNFast® GaN power devices
- GaNSlim™ integrated GaN solutions
- GaNSafe® protected GaN devices
- GeneSiC™ silicon carbide MOSFETs
- SiCPAK® power modules
Wolfspeed stated that the lawsuit reflects its commitment to protecting the intellectual property developed through decades of research and development in silicon carbide and gallium nitride technologies.
Wolfspeed described its intellectual property as a strategic asset supporting continued investment in next-generation power semiconductor technologies.
According to CEO Robert Feurle, protecting the company’s patent portfolio is a priority for both Wolfspeed and its shareholders, emphasizing that while the company respects the intellectual property rights of others, it also expects its own innovations to receive similar protection.
Original – Wolfspeed
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Vishay Intertechnology has expanded its TrenchFET® Gen IV MOSFET portfolio with four new 40 V N-channel power MOSFETs designed specifically for motor control applications operating in electrically noisy environments. Housed in the compact PowerPAK® SO-8 package, the new devices combine high gate threshold voltage and optimized gate charge characteristics to improve noise immunity and switching stability in applications such as BLDC motors, drones, power tools, and industrial automation.
The new MOSFET family addresses a common challenge in motor drive systems: unintended turn-on caused by switching noise and high dv/dt transients.
To improve robustness, the devices feature:
- Minimum gate-source threshold voltage (VGS(th)) greater than 2.5 V
- Qgd/Qgs ratios below 1
The elevated threshold voltage helps prevent false triggering, while the optimized gate charge distribution reduces gate voltage fluctuations and improves immunity to switching-induced noise.
The new MOSFETs are well suited for applications requiring efficient synchronous rectification and DC-DC conversion under demanding switching conditions, including:
- Brushless DC (BLDC) motor drives
- Cordless power tools
- Drones and UAVs
- Industrial automation equipment
- General DC-DC converters
The portfolio includes four devices offering different trade-offs between conduction loss and gate charge:
Device Typical RDS(on) Typical Gate Charge SIR5402DP 0.9 mΩ 82 nC SIR5404DP 1.55 mΩ 61.5 nC SIR5406DP 1.9 mΩ 44 nC SIR5408DP 2.5 mΩ 32.6 nC All devices maintain Qgd/Qgs ratios between 0.69 and 0.75, supporting stable gate drive behavior across the family.
Original – Vishay Intertechnology
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onsemi has announced definitive agreements to divest its manufacturing facilities in Tarlac, Philippines, and Mountain Top, Pennsylvania, as part of its ongoing Fab Right manufacturing strategy. The transactions are intended to optimize the company’s global manufacturing footprint, improve cost competitiveness, and support long-term gross margin expansion while maintaining supply continuity for customers.
The divestitures are part of onsemi’s broader Fab Right initiative, which focuses on aligning manufacturing resources with the company’s most competitive, scalable, and technology-focused operations.
By streamlining its manufacturing network, onsemi aims to:
- Improve manufacturing cost structure
- Expand gross margins
- Increase operational efficiency
- Better align production capacity with long-term strategic priorities
onsemi has signed an agreement to sell its Tarlac, Philippines manufacturing facility to Greatek Electronics Inc., a Taiwan-based provider of semiconductor packaging and testing services.
Key details include:
- Expected closing within three to six months
- Subject to customary regulatory approvals and closing conditions
- Facility will continue operating during the transition period
- Long-term supply agreement established to ensure uninterrupted customer supply after closing
The supply agreement is intended to maintain production continuity while leveraging Greatek’s packaging and test capabilities.
The company has also entered into an agreement to divest its Mountain Top, Pennsylvania facility to Silex Microsystems, a Sweden-based semiconductor manufacturer.
Unlike the Tarlac transaction, the Mountain Top sale will follow a longer transition timeline:
- Expected closing in January 2028
- Subject to customary approvals
- Extended transition supports gradual migration of manufacturing to other onsemi facilities
This phased approach is designed to enable an orderly transfer of products and technologies while minimizing disruption for customers.
onsemi expects the manufacturing footprint optimization to generate approximately:
- US$35 million in annual cost savings
- Initial savings beginning in 2027
- Full annual savings realized in 2028
The company views these savings as an important contribution toward improving long-term profitability and manufacturing efficiency.
Both transactions include measures to ensure uninterrupted customer supply throughout the transition periods.
These include:
- Continued operation of the affected facilities until production transfers are completed
- Long-term manufacturing and supply agreements where appropriate
- Planned migration of products to other qualified manufacturing sites within onsemi’s global network
Original – onsemi
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Micro Commercial Components (MCC) has introduced the MCMWF190P06LQ-TP, a compact AEC-Q101 qualified 60 V P-channel MOSFET designed for automotive high-side switching and power management applications. Packaged in a 2 mm × 2 mm DFN2020-6 package with side-wettable flanks (SWF), the device combines low conduction losses, efficient thermal performance, and enhanced manufacturing reliability for space-constrained automotive electronic modules.
As automotive ECUs continue to shrink while integrating more functionality, designers require compact power devices capable of delivering reliable switching performance without compromising efficiency or thermal performance.
The MCMWF190P06LQ-TP addresses these requirements with:
- 60 V drain-source voltage rating
- Maximum 190 mΩ RDS(on) at VGS = -10 V
- Continuous drain current up to 5.7 A
- Advanced Trench MV MOSFET technology
- Compact DFN2020-6 (SWF) package
The 60 V rating provides sufficient voltage margin for 12 V automotive systems that experience transient voltage spikes.
The device utilizes MCC’s DFN2020-6 Side-Wettable Flank (SWF) package, which improves solder joint visibility during manufacturing and enables more reliable automated optical inspection (AOI).
The compact 2 mm × 2 mm footprint also supports high PCB density in modern automotive electronic control modules while maintaining low thermal resistance for efficient heat dissipation.
The new MOSFET is intended for a variety of automotive power management functions, including:
- Reverse battery protection
- High-side load switches
- Body control modules (BCMs)
- Battery management systems (BMS)
- Automotive lighting
- Motor control
- DC-DC converters
The MCMWF190P06LQ-TP is available now as part of MCC’s expanding automotive MOSFET portfolio, providing designers with a compact, automotive-qualified solution for high-side switching and power management applications in next-generation vehicle electronics.
Original – Micro Commercial Components
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Infineon Technologies announced that the U.S. International Trade Commission’s (ITC) Final Determination, issued on May 7, 2026, has become final following the expiration of the Presidential Review Period. The decision confirms that Innoscience infringed an Infineon gallium nitride (GaN) patent and upholds the associated exclusion and cease-and-desist orders, resulting in import and sales restrictions on the infringing products in the United States.
With the conclusion of the Presidential Review Period, the ITC’s ruling is now fully enforceable. The decision confirms infringement of an Infineon GaN patent by Innoscience and prohibits the importation and sale of the affected products in the U.S. market.
Infineon stated that the outcome reinforces the strength of its intellectual property portfolio and its commitment to protecting innovation and promoting fair competition in the GaN semiconductor industry.
The U.S. ruling follows a series of legal victories for Infineon in Germany involving its GaN patent portfolio.
These German decisions prohibit the import, sale, and marketing of specified patent-infringing Innoscience products in Germany while also awarding damages to Infineon.
Infineon emphasized the growing importance of gallium nitride technology across next-generation power electronics applications, including:
- AI data center power infrastructure
- Renewable energy systems
- Industrial automation
- Electric vehicles
GaN devices offer higher switching speeds, greater power density, lower switching losses, and more compact system designs than conventional silicon technologies, enabling improved energy efficiency and reduced thermal management requirements.
The company also noted that its GaN intellectual property portfolio comprises approximately 450 patent families, supported by its 300 mm GaN manufacturing platform, which it views as a key differentiator for scaling next-generation power semiconductor production.
Original – Infineon Technologies
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Alpha and Omega Semiconductor (AOS) has introduced the AOPL66801, an 80 V MOSFET integrating a half-bridge configuration within its new DFN6×5 AmpStack™ package. The vertically stacked dual-die architecture is designed to increase power density, reduce parasitic inductance, and simplify PCB design for high-performance power conversion applications ranging from AI data center power supplies to industrial equipment and cordless power tools.
Unlike conventional implementations using two separate DFN5×6 MOSFETs, the AOPL66801 integrates both the high-side and low-side MOSFETs into a single compact package. The stacked-die configuration improves PCB space utilization while reducing interconnect parasitics between the two switches.
AOS has also optimized the package’s internal clip structure connecting the half-bridge switch node, minimizing parasitic inductance that typically contributes to voltage overshoot and switching losses.
The integrated package helps reduce phase-node voltage ringing and switching stress compared with discrete implementations by shortening current paths and lowering PCB parasitics.
The device also incorporates a dedicated Kelvin source pin, providing a cleaner gate-drive reference during high di/dt switching events. This improves gate-voltage stability, enhances switching performance, and reduces overall switching losses, particularly in high-frequency power conversion designs.
The AOPL66801 supports demanding thermal and electrical requirements through:
- 80 V drain-source voltage rating
- Integrated half-bridge configuration
- Maximum junction temperature of 175°C
- Low 2.2 mΩ maximum RDS(on) (both high-side and low-side MOSFETs)
- Reduced parasitic inductance through optimized package design
The integrated architecture enables designers to increase converter power density while improving reliability and simplifying PCB layout.
The new AmpStack™ MOSFET is intended for a broad range of high-power applications, including:
- AI data center power supplies
- High-density DC-DC converters
- Industrial power supplies
- Battery-powered power tools
- General high-performance power conversion systems
Key Specifications
Parameter High Side Low Side VDS 80 V 80 V RDS(on) (max) 2.2 mΩ 2.2 mΩ Continuous Drain Current 304 A 215 A Gate Voltage ±20 V ±20 V Total Gate Charge 70 nC 70 nC Original – Alpha and Omega Semiconductor
