Infineon Technologies announced that the U.S. International Trade Commission’s (ITC) Final Determination, issued on May 7, 2026, has become final following the expiration of the Presidential Review Period. The decision confirms that Innoscience infringed an Infineon gallium nitride (GaN) patent and upholds the associated exclusion and cease-and-desist orders, resulting in import and sales restrictions on the infringing products in the United States.
With the conclusion of the Presidential Review Period, the ITC’s ruling is now fully enforceable. The decision confirms infringement of an Infineon GaN patent by Innoscience and prohibits the importation and sale of the affected products in the U.S. market.
Infineon stated that the outcome reinforces the strength of its intellectual property portfolio and its commitment to protecting innovation and promoting fair competition in the GaN semiconductor industry.
The U.S. ruling follows a series of legal victories for Infineon in Germany involving its GaN patent portfolio.
These German decisions prohibit the import, sale, and marketing of specified patent-infringing Innoscience products in Germany while also awarding damages to Infineon.
Infineon emphasized the growing importance of gallium nitride technology across next-generation power electronics applications, including:
- AI data center power infrastructure
- Renewable energy systems
- Industrial automation
- Electric vehicles
GaN devices offer higher switching speeds, greater power density, lower switching losses, and more compact system designs than conventional silicon technologies, enabling improved energy efficiency and reduced thermal management requirements.
The company also noted that its GaN intellectual property portfolio comprises approximately 450 patent families, supported by its 300 mm GaN manufacturing platform, which it views as a key differentiator for scaling next-generation power semiconductor production.
Original – Infineon Technologies