Vishay Intertechnology has expanded its TrenchFET® Gen IV MOSFET portfolio with four new 40 V N-channel power MOSFETs designed specifically for motor control applications operating in electrically noisy environments. Housed in the compact PowerPAK® SO-8 package, the new devices combine high gate threshold voltage and optimized gate charge characteristics to improve noise immunity and switching stability in applications such as BLDC motors, drones, power tools, and industrial automation.
The new MOSFET family addresses a common challenge in motor drive systems: unintended turn-on caused by switching noise and high dv/dt transients.
To improve robustness, the devices feature:
- Minimum gate-source threshold voltage (VGS(th)) greater than 2.5 V
- Qgd/Qgs ratios below 1
The elevated threshold voltage helps prevent false triggering, while the optimized gate charge distribution reduces gate voltage fluctuations and improves immunity to switching-induced noise.
The new MOSFETs are well suited for applications requiring efficient synchronous rectification and DC-DC conversion under demanding switching conditions, including:
- Brushless DC (BLDC) motor drives
- Cordless power tools
- Drones and UAVs
- Industrial automation equipment
- General DC-DC converters
The portfolio includes four devices offering different trade-offs between conduction loss and gate charge:
| Device | Typical RDS(on) | Typical Gate Charge |
|---|---|---|
| SIR5402DP | 0.9 mΩ | 82 nC |
| SIR5404DP | 1.55 mΩ | 61.5 nC |
| SIR5406DP | 1.9 mΩ | 44 nC |
| SIR5408DP | 2.5 mΩ | 32.6 nC |
All devices maintain Qgd/Qgs ratios between 0.69 and 0.75, supporting stable gate drive behavior across the family.
Original – Vishay Intertechnology