Alpha and Omega Semiconductor (AOS) has introduced the AOPL66801, an 80 V MOSFET integrating a half-bridge configuration within its new DFN6×5 AmpStack™ package. The vertically stacked dual-die architecture is designed to increase power density, reduce parasitic inductance, and simplify PCB design for high-performance power conversion applications ranging from AI data center power supplies to industrial equipment and cordless power tools.
Unlike conventional implementations using two separate DFN5×6 MOSFETs, the AOPL66801 integrates both the high-side and low-side MOSFETs into a single compact package. The stacked-die configuration improves PCB space utilization while reducing interconnect parasitics between the two switches.
AOS has also optimized the package’s internal clip structure connecting the half-bridge switch node, minimizing parasitic inductance that typically contributes to voltage overshoot and switching losses.
The integrated package helps reduce phase-node voltage ringing and switching stress compared with discrete implementations by shortening current paths and lowering PCB parasitics.
The device also incorporates a dedicated Kelvin source pin, providing a cleaner gate-drive reference during high di/dt switching events. This improves gate-voltage stability, enhances switching performance, and reduces overall switching losses, particularly in high-frequency power conversion designs.
The AOPL66801 supports demanding thermal and electrical requirements through:
- 80 V drain-source voltage rating
- Integrated half-bridge configuration
- Maximum junction temperature of 175°C
- Low 2.2 mΩ maximum RDS(on) (both high-side and low-side MOSFETs)
- Reduced parasitic inductance through optimized package design
The integrated architecture enables designers to increase converter power density while improving reliability and simplifying PCB layout.
The new AmpStack™ MOSFET is intended for a broad range of high-power applications, including:
- AI data center power supplies
- High-density DC-DC converters
- Industrial power supplies
- Battery-powered power tools
- General high-performance power conversion systems
Key Specifications
| Parameter | High Side | Low Side |
|---|---|---|
| VDS | 80 V | 80 V |
| RDS(on) (max) | 2.2 mΩ | 2.2 mΩ |
| Continuous Drain Current | 304 A | 215 A |
| Gate Voltage | ±20 V | ±20 V |
| Total Gate Charge | 70 nC | 70 nC |
Original – Alpha and Omega Semiconductor