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Vishay Intertechnology, Inc. announced that the company’s facility in Borgaro Torinese, Italy, has been approved for inclusion in “Silicon Valley 8.0 in Piemonte for a Green and Smart Mobility” (SVINBO 8.0), a funded project submitted to the European Union (NGEU) and the Italian government. Funding for the grant will be provided through the NGEU M1C2 – 5.2 program targeting productivity and value chains for microelectronics and semiconductors.
In cooperation with the Polytechnic of Turin, SVINBO 8.0 consists of an investment project aimed at the production of a new family of semiconductors for the EV / HEV market, in addition to an R&D project aimed at developing new diode chips for e-mobility and new power modules. In addition to strengthening production and technology, the inclusion of Vishay in SVINBO 8.0 will have strategic impacts on the microelectronic supply chain, improving competitive positioning in the territory.
Original – Vishay Intertechnology
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Infineon Technologies AG provides its 600 V CoolMOS™ 8 high-voltage superjunction (SJ) MOSFET product family to LITEON, a leader in power management solutions, for superior efficiency and reliability in server applications. The 600 V CoolMOS 8 offers an all-in-one solution that improves LITEON’s new generation technology for existing and upcoming server application designs.
Infineon’s newest CoolMOS 8 at 600 V is leading the way in high-voltage superjunction MOSFET technology, setting the standard for both technology and price performance on a global scale. The technology increases the overall performance of systems, while also playing a crucial role in reducing carbon emissions in various applications, including chargers and adapters, solar and energy storage systems, EV charging infrastructure, and uninterruptible power supplies (UPS) for example.
The 600 V CoolMOS 8 SJ is designed to provide high efficiency and reliability, which aligns perfectly with LITEON’s and Infineon’s commitment to advancing performance and total-cost-of-ownership for server applications. Additionally, the .XT interconnect technology being a key feature of CoolMOS 8 makes the new generation a perfect fit for conventional and AI servers. The advanced interconnect technology offers industry leading thermal dissipation capabilities and improves electrical performance by reducing parasitic inductance and resistance. The CoolMOS 8 SJ MOSFETs have an 18 percent lower gate charge compared to previous MOSFET models and the quickest turn-off time in the market. Their thermal performance has been improved by 14 to 42 percent.
“Our CoolMOS 8 SJ MOSFETs achieve first-class power density and efficiency, which is essential for high-performance server applications,” said Richard Kuncic, Head of Power Systems at Infineon. “The all-in-one solution provided by the CoolMOS 8 product family simplifies our portfolio, making the selection process easier whilst reducing design-in efforts.”
“LITEON is excited to leverage Infineon’s CoolMOS 8 family in our next-generation server designs,” said John Chang, General Manager, Cloud Infrastructure Platform & Solution SBG, LITEON. “The superior efficiency and reliability of the 600 V CoolMOS 8 SJ underscores our commitment to delivering cutting-edge technology and energy-efficient solutions to our customers.”
The 600 V CoolMOS 8 SJ MOSFETs series is an “all in MOSFET” technology addressing industrial and consumer applications. Thanks to its integrated fast body diode, it enables usage of one MOSFET family across all main topologies in the targeted markets. It enables cost attractive Si-based solutions enhancing Infineon’s high-voltage wide band gap (WBG) offerings. The MOSFETs are available in SMD-QDPAK, TOLL and ThinTOLL-8×8 packages.
Samples of the 600 V CoolMOS 8 SJ MOSFETs are now available. More information is available at www.infineon.com/coolmos8. Learn more about the benefits of Infineon’s 600 V CoolMOS 8 SJ MOSFETs in the whitepaper here.
Original – Infineon Technologies
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For Siltronic AG Q1 2025 continued to be characterized by ongoing weak demand for wafers, resulting in a sales decline of around 4 percent compared to Q4 2024, mainly due to slightly negative product mix and price effects.
“The start of the year was within expectations. However, visibility remains limited on when our customers’ inventories will recover and thus demand for wafers will increase. Added to this are uncertainties due to the tightening of American tariff policies and the corresponding countermeasures. The impacts on end-markets and FX rates are not yet foreseeable. However, we do not currently expect any significant direct impact of tariff policies on Siltronic,” commented Dr. Michael Heckmeier, CEO of Siltronic AG, on the development.
Siltronic achieved sales of EUR 345.8 million in Q1 2025, a decrease of 4.1 percent compared to Q4 2024. This development was within expectations and was mainly due to slightly negative product mix and price effects. The average FX rate of the Euro to the US dollar in Q1 2025 was 1.05 (Q4 2024: 1.07), which slightly supported sales.
Cost of sales decreased by 1.4 percent compared to the previous quarter. Due to the disproportionate decline compared to sales, the gross margin decreased from 18.2 percent (Q4 2024) to 15.9 percent (Q1 2025).
Operating expenses for selling, general administration, research and development increased slightly by EUR 1.5 million compared to the previous quarter. FX effects reported in the balance of other operating income and expenses amounted to EUR -2.5 million compared to EUR -0.4 million in Q4 2024.
As a result, EBITDA for Q1 2025 was EUR 78.3 million, below the level of the previous quarter (Q4 2024: EUR 93.0 million). The EBITDA margin decreased from 25.8 percent to 22.6 percent.
These effects were also reflected in the development of EBIT, which decreased from EUR 27.4 million in Q4 2024 to EUR 14.9 million in Q1 2025.
Income tax expense decreased significantly to EUR 3.2 million (Q4 2024: EUR 20.6 million), but the tax rate remained at an elevated level (Q1 2025: 43 percent, Q4 2024: 109 percent).
The result for the period was EUR 4.3 million compared to EUR -1.6 million in Q4 2024. Of this amount, EUR 2.4 million is attributable to Siltronic AG shareholders, with earnings per share of EUR 0.08 (Q4 2024: EUR -0.08).
With equity of EUR 2,179.2 million on March 31, 2025 and an equity ratio of 43.8 percent (December 31, 2024: 43.6 percent) Siltronic continues to have a good balance sheet quality.
The decrease in trade payables mainly related to investments that were already accounted for in 2024 and were due for payment in Q1 2025.
The reduction in cash flow from operating activities compared to the previous quarter is mainly due to the already described EBITDA decline and based on working capital effects related to the reporting date.
In the quarter under review, Siltronic made net payments for capital expenditure including intangible assets of EUR 139.1 million. As expected, payments for capex including intangible assets significantly exceeded additions to the statement of financial position (Q1 2025: EUR 96.5 million). The payments and additions mainly related to the new fab in Singapore.
As a result, both free cash flow at EUR -81.8 million (Q4 2024: EUR 1.1 million) and net cash flow at EUR -74.2 million (Q4 2024: EUR 20.7 million) were negative in Q1 2025. Consequently, net financial debt increased from EUR 733.5 million at the end of 2024 to EUR 819.1 million as of March 31, 2025.
Siltronic is convinced of a significantly increasing medium- and long-term demand for silicon wafers driven by megatrends and is ready to participate in this growth. However, 2025 will continue to be characterized by elevated inventory levels at customers and the associated volume shifts.
The company now expects H1 2025 to be in the mid to high single-digit percentage range below H2 2024. Overall, the sales guidance for the full year 2025 remains unchanged, although it is not yet possible to estimate the impact of American tariff policies and the corresponding countermeasures on expected end-market growth and FX rates for the remainder of the year (assumption for guidance: EUR/USD 1.08).
Additionally, Siltronic AG refines its guidance for the EBITDA margin due to expected negative price effects outside of long-term agreements and adverse product mix developments to 21 to 25 percent. Expectations for the development of capex including intangible assets, depreciation, EBIT, and net cash flow for 2025 remain unchanged.
Original – Siltronic
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NOVOSENSE Microelectronics will present its latest portfolio of automotive and industrial solutions at PCIM Europe 2025, taking place from May 6 to 8 in Nuremberg, Germany. NOVOSENSE will present new product introductions and live demonstrations that address key challenges in modern automotive design, including system integration, power efficiency, functional safety, and electromagnetic compatibility.
As vehicles become increasingly electrified and software-defined, engineers face mounting demands for compact, efficient, and intelligent components that can operate reliably under harsh conditions. NOVOSENSE’s growing portfolio of automotive-grade ICs reflects this shift, with a focus on sensing, isolation, and drive capabilities tailored to emerging system architectures.
Among the highlights at PCIM 2025 is the European debut of the NSDA6934-Q1, a Class D audio amplifier designed for next-generation in-vehicle infotainment. With ultra-low EMI, integrated diagnostics, and robust thermal performance, this device is engineered to meet the high-fidelity and low-noise requirements of premium audio systems. A live demonstration using amplifier boards and speakers will allow visitors to hear its performance first-hand.
Also on display will be the NSLxxxxx series of linear LED drivers, designed for automotive lighting applications. As vehicle lighting evolves to support both functional and aesthetic roles, these drivers offer efficient, low-noise operation with flexible current regulation. Supporting applications from headlamps to ambient lighting strips, the series meets stringent thermal and electrical performance standards required in automotive environments.
Moving inside the vehicle for improved interior lighting control, the NSUC1500-Q1 ambient lighting driver SoC integrates LIN communication, MCU, and driver functionality into a single chip. It enables dynamic lighting sequences and personalization features. The ability to streamline system architecture while enabling programmability and diagnostics makes it particularly attractive for OEMs focused on space savings and system complexity reduction.
The NSE34/35xxx series of high-side switches optimized for power distribution units and smart fuse applications, integrating protection features such as over-temperature, over-current, and open-load detection. In addition, the NSHT30-Q1 temperature and humidity sensor offers accurate measurements with fast response times and high reliability, supporting climate control systems and in-cabin monitoring functions for improved occupant comfort and safety.
The NOVOSENSE booth will also feature a suite of products for New Energy Vehicle (NEV) applications such as battery management systems (BMS), on-board chargers (OBC), DC-DC converters, and traction inverters. A major highlight will be the new third-generation automotive grade NSI83xx series of digital isolators, which address signal integrity and safety requirements with industry-leading EMI performance, high CMTI, low power consumption, and multiple channel options.
Rounding out the NEV range of products are the NSM201x-P current sensors, delivering precise current measurement for electric vehicle platforms, and the NSI67x0 series of isolated gate drivers, designed to support IGBT and SiC-based power stages in traction inverters and motor control.
PCIM Europe stands as the foremost international exhibition and conference encompassing power electronics, intelligent motion, renewable energy, and energy management. Since its inception in 1979, the event has served as the convergence point for industry specialists and academics, unveiling cutting-edge trends and innovations. This event effectively showcases the complete value chain, spanning from components, drive control, and packaging to the ultimate intelligent system solutions.
Visit NOVOSENSE at PCIM 2025 (Hall 4A, Booth 119) to see all of the above products and more in person.
Original – NOVOSENSE Microelectronics
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Infineon Technologies AG launched its new CoolSiC™ MOSFET 750 V G2 technology, designed to deliver improved system efficiency and increased power density in automotive and industrial power conversion applications. The CoolSiC MOSFETs 750 V G2 technology offers a granular portfolio with typical R DS(on) values up to 60 mΩ at 25°C, making it suitable for a wide range of applications, including on-board chargers (OBCs), DC-DC converters, auxiliaries for electric vehicles (xEVs) as well as industrial applications in EV charging, solar inverter, energy storage systems, telecom and SMPS.
The ultra-low R DS(on) values 4 and 7 mΩ enable outstanding performance in static-switching applications, making the MOSFETs a perfect choice for applications such as eFuse, high-voltage battery disconnect switches, solid-state circuit breakers, and solid-state relays. The best-in-class lowest R DS(on) 4 mΩ is featured in Infineon’s innovative top-side cooled Q-DPAK package, which is designed to provide optimal thermal performance and reliability.
The technology also exhibits excellent R DS(on) x Q OSS and best-in-class R DS(on) x Q fr, contributing to reduced switching loss in both hard-switching and soft-switching topologies with superior efficiency in hard-switching user cases. With reduced gate charge, the technology allows for faster switching and reduces gate drive losses, making them more efficient in high-frequency applications.
Additionally, the CoolSiC MOSFETs 750 V G2 offer a combination of high threshold voltage V GS(th),typ of 4.5 V at 25°C and ultra-low Q GD/Q GS ratio, which reinforce robustness against parasitic turn-on (PTO). Furthermore, the technology allows for extended gate driving capabilities, supporting static gate voltages of up to -7 V and transient gate voltages of up to -11 V. This enhanced voltage tolerance provides engineers with greater design margins and best compatibility with other devices in the market.
The CoolSiC 750 V G2 delivers unparalleled switching performance, great ease-of-use and superior reliability with firm adherence to AEC Q101 standards for automotive-grade parts and JEDEC standard for industrial-grade parts. It enables a more efficient, compact and cost-effective designs to fulfill the ever‑growing market needs and underscores its commitment to reliability and longevity in safety-critical automotive applications.
Infineon’s CoolSiC MOSFET 750 V G2 Q-DPAK 4/7/16/25/60 mΩ samples are available to order. More information is available at www.infineon.com/coolsic-750v
Original – Infineon Technologies
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WeEn Semiconductors announced the launch of its 2000V High-Voltage (HV) series of standard rectifiers. Designed to address the evolving demands of high-voltage systems, these rectifiers achieve a 5% reduction in forward voltage drop (VF) and a 20% improvement in thermal resistance compared to competing solutions. The innovations enable significant efficiency gains, lower cooling costs and extended operational lifespans in renewable energy storage and electric vehicle (EV) fast-charging applications.
The 2000V HV series integrates a proprietary single-chip design to minimize conduction losses with an optimized ORing circuit that enhances thermal management. This combination ensures reliable performance in 1500V bus systems and 1000VDC EV charging infrastructure, where voltage spikes and stray inductance pose risks to component longevity. Additional advantages include:
- High Junction Temperature (Tjmax): Operates up to 150°C, ensuring stability in demanding environments.
- Superior Surge Current (IFSM) Tolerance: Enhances robustness under dynamic load conditions.
- TO247-2L Packaging: Streamlines integration into high-power designs.
Two initial variants are available: the 60A-rated WND60P20W and the 90A-rated WND90P20W. These devices are engineered to mitigate voltage spikes in fast-changing EV charging loads, safeguarding systems against failure while improving power density.
“The WND90P20W and WND60P20W resolve critical thermal and efficiency challenges in next-gen renewable energy and EV charging systems,” said Kevin Shen, President of WeEn Semiconductors. “By redefining voltage redundancy and thermal performance, we empower customers to deploy high-efficiency, low-maintenance solutions that outpace industry standards.”
The 2000V HV rectifiers are now available globally in TO247-2L packages. Target applications include solar PV inverter and storage systems, DC fast EV chargers, and industrial power systems requiring high voltage endurance and reliability.
Original – WeEn Semiconductors
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Wise-integration will break new ground at PCIM Europe 2025, May 6–8 in Nuremberg. In collaboration with Savoy International Group, the company will debut its digital controller of a silicon carbide (SiC) power demonstrator model, underscoring its expansion into complementary wide-bandgap (WBG) technologies and showcasing its WiseWare® digital controller’s universality and adaptability across those technologies.
This marks a new market entry for Wise-integration—in particular, targeting SiC-based high-voltage applications in automotive and industrial sectors—while reinforcing that WiseWare® can serve as a common digital intelligence layer regardless of the underlying semiconductor material.
The WiseWare® 1 OBC SIC 7kW power demonstrator model builds on the company’s core expertise in GaN-based systems and digital control ICs, reinforcing its commitment to advancing the full spectrum of power semiconductor technologies. This cross-compatible, digital control solution for both GaN and SiC, enables flexible, efficient, and intelligent power systems across multiple WBG platforms.
“This demonstration of a silicon-carbide onboard charger (OBC) marks an important step in Wise-integration’s journey toward the automotive market,” said CEO Thierry Bouchet. “By showing that WiseWare® can reliably control high-voltage, high-power systems in an EV-relevant application, we’re validating our digital control platform as a strong candidate for next-generation onboard chargers. It’s a first step toward demonstrating that our technology is scalable, adaptable, and aligned with the needs of future EV platforms.”
The demonstrator is a prototype product for the company’s partner, Savoy International Group, a Tier 1 automotive supplier, whose e-mobility division collaborated with Wise-integration on a GaN charger embedded in e-bike batteries in 2023.
“This prototype has been developed specifically to support the electrification of Savoy’s innovative, light electric vehicles under the KILOW brand, as well as their broader ambition to promote fun, accessible, and sustainable mobility solutions,” Bouchet explained.
“Our previous collaboration with Wise-integration on the embedded GaN charger for our e-bike battery met all of our expectations for performance and helps us differentiate KILOW in a crowded field,” said Émile Allamand, CEO of Savoy Group. “The SiC onboard charger will enable us to diversify our EV offerings with a light, four-wheel vehicle under our KILOW brand.”
SiC technology delivers excellent thermal performance and is highly efficient under heavy loads—making it ideal for high-power components like traction inverters and fast chargers. Its ruggedness and maturity also contribute to its reliability in the demanding automotive environment. WiseWare®’s SiC demonstration shows that the company’s digital control platform is technology-agnostic, and can bring the same performance, modularity, and intelligence to SiC systems as it does to GaN systems.
Visit Wise-integration at Hall 6, Booth 450, to see how SiC solutions complement its award-winning GaN-based WiseWare® platform. The company will also share updates on key partnerships and its technology roadmap during the event.
Original – Wise-integration
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SemiQ Inc will showcase several advances relating to high power SiC MOSFETs and modules at PCIM 2025.
PCIM takes place in Nuremberg from the 6th to the 8th May, with SemiQ partnering with alfatec to demonstrate its technology, which can be seen in Hall 4A, Booth 109 throughout the show.
This will include SemiQ’s recently launched third-generation SiC technologies and a wide range of modules to optimize systems for cost, resistance and thermal management. SiC technologies on display at PCIM will include:
1200 V SOT-227 MOSFET modules
Based on SemiQ’s third-generation SiC, these modules are available with an RDSon of 8.4 to 39 mΩ and deliver exceptional switching speeds and reduced losses with low junction to case thermal resistance.
Automotive-qualified QSiC 1200 V MOSFETs
The QSiC 1200 V MOSFETs are available in a bare die and TO-247 4L package and have received AEC-Q101 qualification for automotive systems. The third-generation SiC devices enable smaller die sizes while improving switching speeds and efficiency and are available with an RDSon between 16 and 80 mΩ.
1200 V full-bridge modules for solar inverters, energy storage and battery charging
SemiQ’s family of full-bridge modules deliver up to 333 W of power with a continuous drain of up to 102 A and sets a new standard for power density and efficiency in demanding DC applications.
1200 V six-pack modules for cost-optimized systems
Tested to over 1350 V, with 100% wafer-level burn in, SemiQ’s six-pack modules enable lower cost and more-compact system-level designs at large scale. Applications include AC/DC converters, energy storage systems, battery charging, motor drives and PFC boost converters, including EV fast charging.
To organize a meeting at PCIM, please contact media@semiq.com.
Original – SemiQ
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Forge Nano, Inc. announced the successful close of $40 million in new funding. The funding was co-led by RockCreek, a global investment firm managing over $15 billion in assets with a strong focus on energy innovation, critical supply chains and advanced manufacturing, and Ascent Funds, a US based global energy technology fund. Additional participants include Top Material (KRX: 360070), Orion Infrastructure Capital and Forge Nano’s existing investors.
With this latest raise, Forge Nano’s total capital investment now exceeds $140 million, adding RockCreek to a shareholder roster that includes GM Ventures (NYSE: GM), Volkswagen (OTC: VWAGY), LG Technology Ventures (KRX: 003550), Hanwha (KRX: 000880), Mitsui Kinzoku (OTC: MMSMY), Sumitomo Corporation of Americas (OTC: SSUMF), Air Liquide (OTC: AIQUY), Catalus Capital and SBI Investment (OTC: SBHGF).
“RockCreek’s commitment to American manufacturing, energy security and global technology leadership makes them an ideal partner as we continue to scale,” said Paul Lichty, CEO of Forge Nano. “This capital allows us to build on our momentum in two crucial industries needed for U.S. manufacturing leadership – lithium-ion batteries and semiconductors. We look forward to expanding our domestic workforce as we scale our production capabilities and grow our customer base.”
Forge Nano operates two high-growth business units that can directly impact the United States’ advanced manufacturing competitiveness:
- U.S.-Made, High-Performance Lithium-Ion Batteries:
Forge Battery, the commercial lithium-ion battery production subsidiary of Forge Nano, designs and manufactures lithium-ion cells with industry-leading energy density that incorporate critical minerals coated using Forge Nano’s Atomic ArmorTM technology. Manufactured using a predominately U.S. material supply chain, the company’s battery products are tailored to provide a secure supply chain and industry leading performance for defense, aerospace and specialty applications. In January 2025, Forge Battery was awarded $100 million by the U.S. Department of Energy to expand domestic cell manufacturing at its North Carolina facility. - Advanced Semiconductor ALD Capital Equipment:
Forge Nano’s TEPHRA™ platform, launched in mid-2024, is the world’s fastest single-wafer semiconductor ALD coating tool with commercial throughput for 200mm wafers. TEPHRA™ produces cutting-edge nano-coatings that can unlock chips with 40% faster processing speeds with 50% reduced power consumption, addressing the industry’s growing demand for next-gen devices, sensors, and edge AI computing. The company’s atomic layer deposition (ALD) tools are engineered and built in the U.S., bolstering America’s domestic semiconductor capabilities.
“Forge Nano’s proprietary technology demonstrates that America continues to be the leader in innovation. Forge’s Atomic Armor significantly improves most battery chemistries with higher energy density, longer cycle life, faster charge speed, and lower risk of thermal runway,” said Mark Gordon, Managing Partner of Ascent Funds. “For semiconductors, Forge’s ALD removes a bottleneck to 3D chip stacking, allowing up to a 50% reduction in energy usage by chips. More efficient batteries are critical to national security. More efficient semiconductors will amplify the American lead in AI.”
Forge Nano recently installed a new state-of-the-art battery manufacturing line and a cleanroom production facility for semiconductor ALD tool production, both located at its Colorado headquarters. Forge Nano expects the $40 million investment will be utilized for further domestic manufacturing expansion, as well as to bolster its workforce to support the company’s growing network of strategic partners and customers.
Original – Forge Nano
- U.S.-Made, High-Performance Lithium-Ion Batteries:
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Alpha and Omega Semiconductor Limited (AOS) announced its Mega IPM7 series intelligent power modules. Offering a highly efficient, compact, and durable design, this new series is optimized for brushless DC (BLDC) motor drive-based designs, including home appliance applications such as air-conditioners, refrigerators, dishwashers, and power tools.
The Mega IPM7 series is AOS’ new generation of intelligent power modules engineered to improve application performance and deliver increased power density all in a rugged, compact footprint that meets increasing space-constrained inverter design requirements. This energy-efficient power module also aids in enhancing the cost-effectiveness of fan motor applications. In addition, the advanced features of the Mega IPM7 series enable it to quickly and accurately detect module temperature, helping achieve highly reliable and long lifetime operation.
The Mega IPM7 series is offered in multiple packages, including the Mega IPM7-DT, the Mega7 DBC, and the Mega7 exposed package, allowing customers to select the package that best suits their heat dissipation performance specifications and other application-specific requirements.
“AOS is committed to staying ahead of our customers’ needs for increased power density and efficiency to help them meet market demands for greater performance, long lifetime, and rugged operation. The introduction of the Mega IPM7 series is specifically designed to boost the competitive advantages of BLDC-based applications. What’s more, AOS gives designers numerous package options to choose the one that ideally meets their performance needs,” said Dino Ge, Marketing Director of IGBT/IPM at AOS.
Technical Highlights
- 600V/1A – 600V/3A
- Compact package: 18mm x 7.5mm
- DBC technology
- 3-phase RC-IGBT inverter topology for motor drives
- Integrated HVIC gate driver including bootstrap circuit
- Integrated over-temperature protection and monitoring functions
Product Selection Table
Part Number Package Input Logic Rated Voltage (V) VCE(SAT) Typ. (V) AIM7DT3AR60V3 IPM-7DA Active High 600 1.5 AIM7E1AR60V1 IPM-7A Active High 600 2.0 AIM7ET1AR60V1 IPM-7B Active High 600 2.0 AIM7DT1AR60V3 IPM-7DA Active High 600 2.0 Original – Alpha and Omega Semiconductor
