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ROHM has developed the new 4-in-1 and 6-in-1 SiC molded modules in the HSDIP20 package optimized for PFC and LLC converters in onboard chargers (OBC) for xEVs (electric vehicles). The lineup includes six models rated at 750V (BSTxxx1P4K01) and seven products rated at 1200V (BSTxxx2P4K01). All basic circuits required for power conversion in various high-power applications are integrated into a compact module package, reducing the design workload for manufacturers and enabling the miniaturization of power conversion circuits in OBCs and other applications.
In recent years, the rapid electrification of cars is driving efforts to achieve a decarbonized society. Electric vehicles are seeing higher battery voltages to extend the cruising range and improve charging speed, creating a demand for higher output from OBCs and DC-DC converters. At the same time, there is an increasing need in the market for greater miniaturization and lighter weight for these applications, requiring technological breakthroughs to improve power density – a key factor – while enhancing heat dissipation characteristics that could otherwise hinder progress.
ROHM’s HSDIP20 package addresses these technical challenges that were previously becoming difficult to overcome with discrete configurations, contributing to both higher output and the downsizing of electric powertrains.
The HSDIP20 features an insulating substrate with excellent heat dissipation properties that suppresses the chip temperature rise even during high power operation. When comparing a typical OBC PFC circuit utilizing six discrete SiC MOSFETs with top-side heat dissipation to ROHM’s 6-in-1 module under the same conditions, the HSDIP20 package was verified to be approx. 38°C cooler (at 25W operation).
This high heat dissipation performance supports high currents even in a compact package, achieving industry-leading power density more than three times higher than top-side cooled discretes and over 1.4 times that of similar DIP type modules. As a result, in the PFC circuit mentioned above, the HSDIP20 can reduce mounting area by approx. 52% compared to top-side cooled discrete configurations, greatly contributing to the miniaturization of power conversion circuits in applications such as OBCs.
Going forward, ROHM will continue to advance the development of SiC modules that balance miniaturization with high efficiency while also focusing on the development of automotive SiC IPMs that provide higher reliability in a smaller form factor.
Original – ROHM
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SemiQ Inc has announced a family of co-packaged 1200 V SOT-227 MOSFET modules based on its third-generation SiC technology.
In addition to smaller die sizes, third generation SIC devices offer faster switching speeds and reduced losses.
The family of highly rugged and easy mount devices currently offers six devices with an RDSon range of 8.4 to 39 mΩ: GCMS008C120S1-E1, GCMX008C120S1-E1, GCMS016C120S1-E1, GCMX016C120S1-E1, GCMS040C120S1-E1 and GCMX040C120S1-E1, with the GCMX040C120S1-E1 having a switching time as low as 67 ns. In addition to these six, two further modules – GCMS080C120S1-E1 and GCMX080C120S1-E1 – are available, each with an RDSon of 80 mΩ.
The COPACK MOSFETs with Schottky barrier diode provides exceptional switching losses at high junction temperature due to the low turn on switching losses.
SemiQ is targeting the robust SiC MOSFET modules at applications including solar inverters, energy storage systems, battery charging, and server power supplies. All devices have been screened with wafer-level gate-oxide burn-in tests and tested beyond 1400 V, with avalanche testing to 330 mJ (RDSon = 39 mΩ) or 800 mJ (RDSon = 16.5 or 8.4 mΩ).
In addition to having a drain-to-source voltage (VDS) of 1200 V, the MOSFET reduces total switching losses to as low as 468 µJ and a reverse recovery charge of 172 nC (GCMX040C120S1-E1). The family also has a low junction-to-case thermal resistance and comes with an isolated backplate and the ability to directly mount to a heatsink by 4kVAC galvanic isolation testing.
Specifications: Ratings and electrical/thermal characteristics
The QSiC 1200 V MOSFET modules have a continuous operational and storage temperature of -55oC to 175oC. It has a recommended operational gate-source voltage of -4.5/18 V, with a VGSmax of -8/22 V, and a power dissipation of 183 to 536 W (RDSon = 39 and mΩ, core and junction temperature 25oC).
For static electrical characteristics, the device has a junction-to-case thermal resistance of 0.23oC per watt (RDSon = 8.4) as well as a typical zero-gate voltage drain current of 100 nA, and a gate-source voltage current of 10 nA.
The fastest switching device has a turn-on delay time of 13 ns with a rise time of 7 ns; its turn-off delay time is 18 ns with a fall time of 29 ns.
Original – SemiQ
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WeEn Semiconductors will exhibit the company’s latest 600 V super junction MOSFET for computing and telecoms server applications at this year’s PCIM Expo conference and trade fair. The WSJ2M60R065DTL has been specifically developed to address the demands of artificial intelligence (AI) and other high-performance processing applications by enabling improved efficiency, smaller form factors and easier thermal management.
Based on the company’s latest generation super junction technology, the WeEn WSJ2M60R065DTL super junction MOSFET combines an industry-leading on resistance (RDS(ON)) and figure of merit (RDS(ON)*Qg) with an ultra-compact TOLL package. Visitors to PCIM in Nuremberg from 6th – 8th May 2025 will have the opportunity to see this advanced technology on the WeEn booth (Hall 9, booth 131), alongside other bipolar products including silicon-controlled rectifiers, power diodes, high voltage transistors and silicon carbide (SiC) devices.
The WSJ2M60R065DTL is rated for 50 A, features a maximum RDS(ON) of 65 mΩ and has a typical blocking voltage of around 700 V. An integrated and fine-tuned forward recovery diode (FRD) ensures excellent reverse recovery robustness and balanced high-temperature performance. The body diode can withstand a commutation speed of 1000 A/μs without damage, making the WSJ2M60R065DTL particularly suitable for Zero Voltage Switching (ZVS) applications in soft-switching topologies where it can deliver high efficiency while handling irregular operating conditions. At the same time, stable resistance performance delivers a steady and predictable RDS(ON) across a range of current and temperature conditions.
In developing the new MOSFET, WeEn has focused on precise control of the charge balance of the super junction structure. This ensures robust avalanche ruggedness and low capacitive losses that allow for an optimized balance of RDS(ON) and EOSS As with all WeEn technologies, reliability is a prime consideration and the company conducts extensive and reliability checks. All of the company’s super junction MOSFETs demonstrate not only consistency among samples but good ESD capabilities and zero aging during reliability examinations.
Original – WeEn Semiconductors
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At PCIM Europe 2025 in Nuremberg, Infineon Technologies AG will showcase its latest semiconductor, software and tooling solutions that help to solve today’s green and digital transformation challenges. At booth #470 in hall 7, the company will present highlights from its extensive power device portfolio, covering all relevant power technologies spanning silicon (Si), silicon carbide (SiC), and gallium nitride (GaN). Under the motto “Driving decarbonization and digitalization. Together”, Infineon will offer numerous demonstrations and presentations as well as the opportunity to talk to its experts.
Infineon’s PCIM 2025 demonstration highlights will include solutions in the following areas:
- Silicon and Wide Bandgap (WBG) at its best: At PCIM, Infineon will showcase its latest package and product developments across Si, SiC and GaN for applications such as AI data center power supplies, robotics, solar systems, and on-board chargers. Highlights include the new CoolSiC™ JFET technology, which offers outstanding levels of efficiency, system integration, and robustness for solid-state power distribution applications. Further solutions on display will include the CoolSET™ system in package, various innovative solutions in CoolGaN™ transistor technology and the proven CoolMOS™ 8 and OptiMOS™ 8 in silicon.
- Sustainable mobility, with zero-emission electromobility: Infineon’s power solutions accelerate the transition to e-mobility by enabling efficient traction inverters, on-board chargers, DC-DC converters and battery management systems. At PCIM, the company will showcase its AURIX™ Kit for xEV power conversion, a versatile platform for the development of digitally controlled DC-DC converters with different topologies and control methods. In addition, Infineon will present new WBG innovations for on-board chargers and DC-DC converters that offer enhanced performance and design flexibility.
- Green, intelligent buildings and smarter living: Residential energy systems such as photovoltaic panels and heat pumps, together with smart, energy-efficient electronic devices and EV chargers, are key to reducing the carbon footprint in the home. Semiconductors play a vital role in enhancing energy efficiency and enabling smart, connected buildings. At PCIM, Infineon will showcase SiC- and GaN-based technologies that offer high energy efficiency and reliability for energy generation and consumption. On display will be full system solutions for solar inverters, as well as demos for power optimization and heat pump boosting.
- Powering AI – from grid to core: The exponential data growth driven by digitalization and AI is increasing the energy demand of data centers. At PCIM, Infineon will show how its solutions, extending from the grid to the core, leverage Si, SiC, and GaN technologies to maximize the efficiency, power density and reliability of AI infrastructure. The portfolio includes top-of-rack switches, power supplies and battery backup units. A power system reliability modeling solution enables real-time health monitoring for data centers, helping to reduce outages and total cost of ownership.
Infineon will also contribute to the PCIM conference program and the various expo stages. An overview of all contributions by Infineon experts is available at www.infineon/pcim.
Visitors who are unable to attend the live show can register for Infineon’s digital event platform.
Original – Infineon Technologies
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Navitas Semiconductor will be exhibiting several GaN and SiC breakthroughs in AI data centers, EVs, motor drives, and industrial applications at PCIM 2025 (6th – 8th May, 2025).
PCIM is the leading exhibition for power electronics, intelligent motion, renewable energy, and energy management. Visitors are invited to visit the “Planet Navitas” booth (Hall 9, Booth #544) to learn about Navitas’ mission to ‘Electrify our World™’ by advancing the transition from legacy silicon to next-generation, clean energy, GaN and SiC power semiconductors.
Major technology and system breakthroughs include:
- The world’s first production-released 650 V bi-directional GaNFast ICs and IsoFast, high-speed isolated gate-drivers. This creates a paradigm shift in power by enabling the transition from two-stage to single-stage topologies. Targeted applications range widely across EV charging (On-Board Chargers (OBC) and roadside), solar inverters, energy storage, and motor drives. The recorded launch event video can be viewed here.
- Automotive-qualification high-power GaNSafe™ ICs, which have been qualified to both Q100 and Q101, unlocking unprecedented power density and efficiency for on-board chargers (OBCs) and HV-LV DC-DC converters applications. A comprehensive reliability report has been created that analyzes over 7 years of production and field data and demonstrates GaN’s technology track record, alongside generational and family improvements in robustness and reliability, establishing GaN power ICs as highly reliable and automotive-ready.
- The latest release of the SiCPAK power modules, which utilize advanced epoxy-resin potting technology and GeneSiC™ trench-assisted planar technology, to enable 5x lower thermal resistance shift for extended system lifetime. Rigorously designed and validated for the most demanding high-power environments, they prioritize reliability and high-temperature performance. Target markets include EV DC fast chargers (DCFC), industrial motor drives, interruptible power supplies (UPS), solar inverters and power optimizers, energy storage systems (ESS), industrial welding, and induction heating.
- Newly released GaNSense™ Motor Drive ICs with bi-directional loss-less current sensing, voltage sensing, and temperature protection, further enhance performance and robustness beyond what is achievable by any discrete GaN or discrete silicon devices.
- Automotive Qualified (AEC-Q101) Gen-3 Fast SiC MOSFETs with ‘trench-assisted planar’ technology: Enabled by over 20 years of SiC innovation leadership, GeneSiC™ technology leads on performance with the Gen-3 ‘Fast’ SiC MOSFETs with ‘trench-assisted planar’ technology. This proprietary technology provides world-leading performance over temperature, delivering cool-running, fast-switching, and superior robustness to support faster charging EVs and up to 3x more powerful AI data centers.
- GaNSlim™: Simple. Fast. Integrated: A new generation of highly integrated GaN power ICs that will further simplify and speed up the development of small form factor, high-power-density applications by offering the highest level of integration and thermal performance. Target applications include chargers for mobile devices and laptops, TV power supplies, and lighting systems of up to 500W.
- World’s First 8.5 kW AI Data Center Power Supply: See the world’s first 8.5 kW OCP power solution achieving 98% efficiency for AI and hyperscale data centers. Featuring high-power GaNSafe™ power ICs and Gen-3 Fast SiC MOSFETs in 3-Phase Interleaved CCM Totem-Pole PFC and 3-Phase LLC topologies to provide the highest efficiency, performance, and lowest component count.
- World’s Highest Power Density AI Power Supply: Navitas delivers efficient 4.5 kW power in the smallest power-supply form factor for the latest AI GPUs that demand 3x more power per rack. The optimized design uses high-power GaNSafe ICs and Gen-3 Fast SiC MOSFETs enabling the world’s highest power density with 137 W/in3 and over 97% efficiency.
- ‘IntelliWeave’ Patented Digital Control Optimized for AI Data Center Power Supplies: Combined with high-power GaNSafe™ and Gen-3 ‘Fast’ SiC MOSFETs to enable PFC peak efficiencies of 99.3% and reduce power losses by 30% compared to existing solutions.
Original – Navitas Semiconductor
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Littelfuse, Inc. announced the release of the IXD2012NTR, a high-speed, high-side and low-side gate driver designed to drive two N-channel MOSFETs or IGBTs in a half-bridge configuration. The IXD2012NTR is optimized for high-frequency power applications, delivering superior switching performance and enhanced design flexibility.
The IXD2012NTR operates over a wide 10 V to 20 V voltage range and supports a high side switch of up to 200 V in a bootstrap operation. Its logic inputs are compatible with standard TTL and CMOS levels down to 3.3 V, ensuring seamless integration with a wide range of control devices. With a 1.9 A source and 2.3 A sink output capability, the IXD2012NTR provides robust gate drive currents ideal for high-speed switching applications.
The device’s integrated cross-conduction protection logic prevents the high- and low-side outputs from turning on simultaneously, while simplifying circuit design through a high level of integration. Offered in a compact SOIC(N)-8 package and operational over a temperature range of −40 °C to +125 °C, the IXD2012NTR delivers reliable performance even in harsh environments.
Key Features and Benefits
- High-Speed Switching Performance: Drives two N-channel MOSFETs or IGBTs in a half-bridge configuration.
- Wide Operating Voltage Range: 10 V to 20 V for versatile power management applications.
- High Side Switching Capability: Operates up to 200 V in a bootstrap configuration.
- Compatibility and Flexibility: Logic inputs compatible with TTL and CMOS levels down to 3.3 V for easy interfacing with controllers.
- Output Current Drive Capability: 1.9 A source and 2.3 A sink output for robust gate drive currents.
- Enhanced Efficiency and Integration: Integrated cross-conduction protection reduces power loss and simplifies design.
- Industry-Standard Pinout: Ensures drop-in replacement capability for existing designs.
“The IXD2012NTR is a direct drop-in replacement to popular, industry-standard gate driver devices,” said June Zhang, Product Manager, Integrated Circuits Division of Littelfuse Semiconductor Business Unit. “This addition to our portfolio provides customers with a reliable, alternate source to meet demanding production schedules while delivering exceptional high-speed performance.”
Ideal for Diverse Markets and Applications
The IXD2012NTR enhances the Littelfuse portfolio of high- and low-side gate drivers by offering a new 200 V device. It supports various high-frequency applications, including:
- DC-DC converters
- AC-DC inverters
- Motor controllers
- Class-D power amplifiers
The IXD2012NTR is well-suited for use in several markets:
- General industrial and electrical equipment
- Appliances
- Building solutions
- Energy storage
- Solar energy
- Power tools
Original – Littelfuse
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DISCO CORPORATION has made a decision to build a new manufacturing plant (Hiroshima Works Gohara Plant, hereinafter “Gohara Plant”) in the Kure City Sports Center (Gohara-cho, Kure City) that the company purchased from Kure City, Hiroshima Prefecture. Precision processing tool production is planned at the Gohara Plant, and construction of the plant is planned in three phases. This press release is a notice regarding the construction plans for phase 1.
Purpose of the New Plant
- Improved production capability
- Improved BCM capability and production efficiency
Outline of Gohara Plant’s Construction Phase 1
Address Inside Warahino mountain region, Gohara-cho, Kure-shi, Hiroshima Building area 13,179 m² Building structure Steel + Reinforced concrete, eleven stories, seismically isolated structure Total floor space 133,570 m² Building investment 33 billion yen Construction start date February 1, 2026 Construction completion date April 30, 2028 This information is regarding the building that will be constructed during phase 1 of construction. The total land area of the Gohara Plant (Kure City Sports Center) is 218,539 m²
Construction plans for phases 2 and 3 will be decided appropriately based on the situation.
Timeline of Acquiring the Kure City Sports Center
- Feb. 2023: Acquired preferential rights to negotiate with Kure City
- Nov. 2023: Officially concluded the sales contract
- Apr. 2025: Ownership transferred from Kure City to DISCO
- Acquisition amount: 2.5 billion yen
Original – DISCO
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The JANS qualification represents the highest level of screening and acceptance requirements, ensuring the superior performance, quality and reliability of discrete semiconductors for aerospace, defense and spaceflight applications. Microchip Technology announced its completion of its family of radiation-hardened (rad-hard) power MOSFETs to the MIL-PRF-19500/746 slash-sheet specification and the achievement of JANSF qualification for its JANSF2N7587U3, 100V N-channel MOSFET to 300 Krad (Si) Total Ionizing Dose (TID).
Microchip’s JANS series of rad-hard power devices is available in voltage ranges from 100–250V to 100 Krad (Si) TID, with the family expanding to higher Radiation Hardness Assurance (RHA) levels, starting with the JANSF2N7587U3 at 300 Krad (Si) TID. The JANS RH MOSFET die is available in multiple package options including a plastic package using the MIL-qualified JANSR die, providing a cost-effective power device for New Space and Low Earth Orbit (LEO) applications. The ceramic package is hermetically sealed and developed for total dose and Single-Event-Environments (SEE).
The devices are designed to meet the MIL-PRF19500/746 standard with enhanced performance, making them excellent options for applications that demand high-reliability components capable of withstanding the harsh environments of space and extending the reliability of power circuitry.
“Meeting the stringent specifications required for rad-hard MOSFETs is extremely challenging, and Microchip is pleased to achieve this development milestone by leveraging its proprietary rad-hard by design process and technology,” said Leon Gross, corporate vice president of Microchip’s discrete products group. “Our advanced technology provides our aerospace and defense customers with highly reliable and cost-effective solutions that meet the growing demand of the market and their applications.”
The JANSF and JANSR RH power MOSFETs serve as the primary switching elements in power conversion circuits, including point-of-load converters, DC-DC converters, motor drives and controls, and general-purpose switching. With low RDS(ON) and a low total gate charge, these power MOSFETs offer improved energy efficiency, reduced heat generation and enhanced switching performance when compared to similar devices on the market.
Original – Microchip Technology
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Navitas Semiconductor announced the release of its latest SiCPAK™ power modules with epoxy-resin potting technology, powered by proprietary trench-assisted planar SiC MOSFET technology, that have been rigorously designed and validated for the most demanding high-power environments, prioritizing reliability and high-temperature performance. Target markets include EV DC fast chargers (DCFC), industrial motor drives, interruptible power supplies (UPS), solar inverters and power optimizers, energy storage systems (ESS), industrial welding, and induction heating.
The new portfolio of 1200V SiCPAK™ power modules, enabled by advanced epoxy-resin potting technology, are engineered to withstand high-humidity environments by preventing moisture ingression and enable stable thermal performance by reducing degradation from power and temperature variations.
Navitas’ SiCPAK™ modules demonstrated 5x lower thermal resistance increase following 1000 cycles of thermal shock testing (-40 C to + 125 C) compared to conventional silicone-gel-filled case-type modules. Furthermore, all silicone-gel-filled modules failed isolation tests while SiCPAK™ epoxy-resin potted modules maintained acceptable isolation levels.
Enabled by over 20 years of SiC innovation leadership, Navitas’ GeneSiC™ ‘trench-assisted planar SiC MOSFET technology’ provides industry-leading performance over temperature, enabling up to 20% lower losses, cooler operation, and superior robustness to support long-term system reliability.
The ‘trench-assisted planar’ technology enables an extremely low RDS(ON) increase versus temperature, which results in the lowest power losses across a wider operating range and offers up to 20% lower RDS(ON) under in-circuit operation at high temperatures compared to competition. Additionally, all GeneSiC™ SiC MOSFETs have the highest-published 100%-tested avalanche capability, up to 30% better short-circuit withstand energy, and tight threshold voltage distributions for easy paralleling.
The 1200V SiCPAK™ power modules have built-in NTC thermistors and are available from 4.6 mΩ to 18.5 mΩ ratings in half-bridge, full-bridge, and 3L-T-NPC circuit configurations. They are pin-to-pin compatible with industry-standard press-fit modules. Additionally, optional pre-applied Thermal Interface Material (TIM) for simplified assembly is available.
Original – Navitas Semiconductor
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Polar Semiconductor announced the finalization of a strategic agreement with Renesas Electronics Corporation to license their Gallium Nitride on Silicon D-Mode (GaN-on-Si) technology. As part of this agreement, Polar will fabricate High Voltage 650V Class GaN-on-Si devices for Renesas and other customers in its 200mm automotive quality high-volume manufacturing facility in Minnesota. This facility, recently expanded with state-of-the-art processing and automation equipment, is poised to meet growing demand for next-generation semiconductor solutions.
Polar and Renesas will work together to scale commercial production of GaN devices, expanding its use across critical industries, including automotive, data center, consumer, industrial, and aerospace & defense markets. The agreement ensures the U.S. has a reliable, domestic source for this cutting-edge semiconductor technology.
Market adoption of GaN technology will be accelerated through cost efficiency and innovative device architectures enabled by scaling to 200mm fabrication. By leveraging Polar’s manufacturing expertise and Renesas’ proven power semiconductor technology and commercial leadership, this strategic collaboration ensures customers a secure supply of cost-competitive, superior quality, and high-performance GaN device wafers.
Surya Iyer, President and COO of Polar Semiconductor, said, “This licensing and commercial production agreement underscores our commitment to strengthening the domestic semiconductor ecosystem. GaN is a game-changing technology for Power and RF, and with Renesas as our partner, we are well-positioned to ramp commercial production, secure key defense programs, and drive the next wave of semiconductor innovation.”
“We are excited to partner with Polar to scale our proven GaN technology to 200mm wafers and leverage our know-how across broad power conversion markets ranging from Infrastructure & AI to Energy & Industrial to e-Mobility & xEVs to high-value IoT,” said Chris Allexandre, SVP & GM, Power Products Group, at Renesas. “This collaboration ensures a strong, U.S.-based manufacturing capability for GaN products, provides multi-sourcing to our customers, and meets the growing demand for high-performance power solutions.”
Original – Polar Semiconductor
